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5961-00-484-7898
20 Products
70HR100A
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961004847898
NSN
5961-00-484-7898
MFG
INTERNATIONAL RECTIFIER CORPORATION
Description
CURRENT RATING PER CHARACTERISTIC: 70.00 AMPERES MAXIMUM AVERAGE FORWARD CURRENT AVERAGED OVER A FULL 60-HZ CYCLE AND 1200.00 AMPERES MAXIMUM PEAK FORWARD SURGE CURRENT
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
MOUNTING FACILITY QUANTITY: 1
MOUNTING METHOD: THREADED STUD
NOMINAL THREAD SIZE: 0.250 INCHES
OVERALL LENGTH: 1.453 INCHES MAXIMUM
OVERALL WIDTH ACROSS FLATS: 0.686 INCHES NOMINAL
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 1 TAB, SOLDER LUG AND 1 THREADED STUD
THREAD SERIES DESIGNATOR: UNF
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 1000.0 MAXIMUM REPETITIVE PEAK REVERSE VOLTAGE AND 700.0 MAXIMUM REVERSE VOLTAGE, TOTAL RMS
Related Searches:
DMS 87-006
TRANSISTOR
NSN, MFG P/N
5961004847740
NSN
5961-00-484-7740
MFG
DLA LAND AND MARITIME
Description
CURRENT RATING PER CHARACTERISTIC: 200.00 MILLIAMPERES MAXIMUM COLLECTOR CURRENT, DC
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: JUNCTION CONTACT
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 165.0 DEG CELSIUS JUNCTION
MOUNTING METHOD: PRESS FIT
OVERALL DIAMETER: 0.078 INCHES MINIMUM AND 0.092 INCHES MAXIMUM
OVERALL LENGTH: 0.049 INCHES MINIMUM AND 0.061 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 225.0 MILLIWATTS MAXIMUM COLLECTOR POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: NPN
TERMINAL TYPE AND QUANTITY: 3 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 60.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-BASE, EMITTER OPEN AND 40.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-EMITTER, BASE OPEN AND 6.0 MAXIMUM BREAKDOWN VOLTAGE, EMITTER-TO-BASE, COLLECTOR OPEN
Related Searches:
MMT3904
TRANSISTOR
NSN, MFG P/N
5961004847740
NSN
5961-00-484-7740
MFG
FREESCALE SEMICONDUCTOR INC.
Description
CURRENT RATING PER CHARACTERISTIC: 200.00 MILLIAMPERES MAXIMUM COLLECTOR CURRENT, DC
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: JUNCTION CONTACT
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 165.0 DEG CELSIUS JUNCTION
MOUNTING METHOD: PRESS FIT
OVERALL DIAMETER: 0.078 INCHES MINIMUM AND 0.092 INCHES MAXIMUM
OVERALL LENGTH: 0.049 INCHES MINIMUM AND 0.061 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 225.0 MILLIWATTS MAXIMUM COLLECTOR POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: NPN
TERMINAL TYPE AND QUANTITY: 3 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 60.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-BASE, EMITTER OPEN AND 40.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-EMITTER, BASE OPEN AND 6.0 MAXIMUM BREAKDOWN VOLTAGE, EMITTER-TO-BASE, COLLECTOR OPEN
Related Searches:
1N4493
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961004847781
NSN
5961-00-484-7781
MFG
ELECTRONIC INDUSTRIES ASSOCIATION
Description
CURRENT RATING PER CHARACTERISTIC: 1.70 MILLIAMPERES MAXIMUM MAXIMUM REVERSE SURGE CURRENT
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: GLASS
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 175.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.070 INCHES NOMINAL
OVERALL LENGTH: 0.160 INCHES NOMINAL
POWER RATING PER CHARACTERISTIC: 1.5 WATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPECIFICATION/STANDARD DATA: 80131-RELEASE4669 PROFESSIONAL/INDUSTRIAL ASSOCIATION SPECIFICATION
TERMINAL LENGTH: 0.800 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 150.0 MAXIMUM NOMINAL REGULATOR VOLTAGE
Related Searches:
720604-35
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961004847898
NSN
5961-00-484-7898
MFG
RAYTHEON COMPANY DBA RAYTHEON
Description
CURRENT RATING PER CHARACTERISTIC: 70.00 AMPERES MAXIMUM AVERAGE FORWARD CURRENT AVERAGED OVER A FULL 60-HZ CYCLE AND 1200.00 AMPERES MAXIMUM PEAK FORWARD SURGE CURRENT
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
MOUNTING FACILITY QUANTITY: 1
MOUNTING METHOD: THREADED STUD
NOMINAL THREAD SIZE: 0.250 INCHES
OVERALL LENGTH: 1.453 INCHES MAXIMUM
OVERALL WIDTH ACROSS FLATS: 0.686 INCHES NOMINAL
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 1 TAB, SOLDER LUG AND 1 THREADED STUD
THREAD SERIES DESIGNATOR: UNF
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 1000.0 MAXIMUM REPETITIVE PEAK REVERSE VOLTAGE AND 700.0 MAXIMUM REVERSE VOLTAGE, TOTAL RMS
Related Searches:
1R25H90
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961004847899
NSN
5961-00-484-7899
MFG
INTERNATIONAL RECTIFIER CORPORATION
Description
CURRENT RATING PER CHARACTERISTIC: 70.00 AMPERES MAXIMUM AVERAGE FORWARD CURRENT AVERAGED OVER A FULL 60-HZ CYCLE
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 200.0 DEG CELSIUS JUNCTION
MOUNTING FACILITY QUANTITY: 1
MOUNTING METHOD: THREADED STUD
NOMINAL THREAD SIZE: 0.250 INCHES
OVERALL DIAMETER: 0.667 INCHES MAXIMUM
OVERALL LENGTH: 0.450 INCHES MAXIMUM
OVERALL WIDTH ACROSS FLATS: 0.667 INCHES MINIMUM AND 0.687 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 1 TAB, SOLDER LUG AND 1 THREADED STUD
THREAD SERIES DESIGNATOR: UNF
Related Searches:
5G50-0072
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961004847899
NSN
5961-00-484-7899
MFG
MAGNETEK INC INDUSTRIAL CONTROLS GROUP DIV DBA MAGNETEK
Description
CURRENT RATING PER CHARACTERISTIC: 70.00 AMPERES MAXIMUM AVERAGE FORWARD CURRENT AVERAGED OVER A FULL 60-HZ CYCLE
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 200.0 DEG CELSIUS JUNCTION
MOUNTING FACILITY QUANTITY: 1
MOUNTING METHOD: THREADED STUD
NOMINAL THREAD SIZE: 0.250 INCHES
OVERALL DIAMETER: 0.667 INCHES MAXIMUM
OVERALL LENGTH: 0.450 INCHES MAXIMUM
OVERALL WIDTH ACROSS FLATS: 0.667 INCHES MINIMUM AND 0.687 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 1 TAB, SOLDER LUG AND 1 THREADED STUD
THREAD SERIES DESIGNATOR: UNF
Related Searches:
70HF100
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961004847899
NSN
5961-00-484-7899
MFG
INTERNATIONAL RECTIFIER CORP ORATION USE CAGE CODE 81483 FOR CATALOGING.
Description
CURRENT RATING PER CHARACTERISTIC: 70.00 AMPERES MAXIMUM AVERAGE FORWARD CURRENT AVERAGED OVER A FULL 60-HZ CYCLE
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 200.0 DEG CELSIUS JUNCTION
MOUNTING FACILITY QUANTITY: 1
MOUNTING METHOD: THREADED STUD
NOMINAL THREAD SIZE: 0.250 INCHES
OVERALL DIAMETER: 0.667 INCHES MAXIMUM
OVERALL LENGTH: 0.450 INCHES MAXIMUM
OVERALL WIDTH ACROSS FLATS: 0.667 INCHES MINIMUM AND 0.687 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 1 TAB, SOLDER LUG AND 1 THREADED STUD
THREAD SERIES DESIGNATOR: UNF
Related Searches:
720604-34
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961004847899
NSN
5961-00-484-7899
MFG
RAYTHEON COMPANY DBA RAYTHEON
Description
CURRENT RATING PER CHARACTERISTIC: 70.00 AMPERES MAXIMUM AVERAGE FORWARD CURRENT AVERAGED OVER A FULL 60-HZ CYCLE
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 200.0 DEG CELSIUS JUNCTION
MOUNTING FACILITY QUANTITY: 1
MOUNTING METHOD: THREADED STUD
NOMINAL THREAD SIZE: 0.250 INCHES
OVERALL DIAMETER: 0.667 INCHES MAXIMUM
OVERALL LENGTH: 0.450 INCHES MAXIMUM
OVERALL WIDTH ACROSS FLATS: 0.667 INCHES MINIMUM AND 0.687 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 1 TAB, SOLDER LUG AND 1 THREADED STUD
THREAD SERIES DESIGNATOR: UNF
Related Searches:
P17-1000-070B3
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961004847899
NSN
5961-00-484-7899
P17-1000-070B3
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961004847899
NSN
5961-00-484-7899
MFG
LA MARCHE MFG. CO. DBA LA MARCHE
Description
CURRENT RATING PER CHARACTERISTIC: 70.00 AMPERES MAXIMUM AVERAGE FORWARD CURRENT AVERAGED OVER A FULL 60-HZ CYCLE
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 200.0 DEG CELSIUS JUNCTION
MOUNTING FACILITY QUANTITY: 1
MOUNTING METHOD: THREADED STUD
NOMINAL THREAD SIZE: 0.250 INCHES
OVERALL DIAMETER: 0.667 INCHES MAXIMUM
OVERALL LENGTH: 0.450 INCHES MAXIMUM
OVERALL WIDTH ACROSS FLATS: 0.667 INCHES MINIMUM AND 0.687 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 1 TAB, SOLDER LUG AND 1 THREADED STUD
THREAD SERIES DESIGNATOR: UNF
Related Searches:
1902-0549
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961004847977
NSN
5961-00-484-7977
MFG
HEWLETT PACKARD CO
Description
CURRENT RATING PER CHARACTERISTIC: 132.00 MILLIAMPERES MAXIMUM MAXIMUM DC CURRENT IN REVERSE BREAKDOWN REGION AND 30.00 MILLIAMPERES NOMINAL VOLTAGE REGULATOR DIODE CURRENT
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: GLASS
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 200.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.145 INCHES MAXIMUM
OVERALL LENGTH: 0.350 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 5.0 WATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPECIFICATION/STANDARD DATA: 80131-RELEASE5750 PROFESSIONAL/INDUSTRIAL ASSOCIATION SPECIFICATION
TERMINAL LENGTH: 1.000 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 36.0 NOMINAL NOMINAL REGULATOR VOLTAGE
VOLTAGE TOLERANCE IN PERCENT: -5.0 TO 5.0
Related Searches:
1N5365B
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961004847977
NSN
5961-00-484-7977
MFG
ELECTRONIC INDUSTRIES ASSOCIATION
Description
CURRENT RATING PER CHARACTERISTIC: 132.00 MILLIAMPERES MAXIMUM MAXIMUM DC CURRENT IN REVERSE BREAKDOWN REGION AND 30.00 MILLIAMPERES NOMINAL VOLTAGE REGULATOR DIODE CURRENT
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: GLASS
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 200.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.145 INCHES MAXIMUM
OVERALL LENGTH: 0.350 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 5.0 WATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPECIFICATION/STANDARD DATA: 80131-RELEASE5750 PROFESSIONAL/INDUSTRIAL ASSOCIATION SPECIFICATION
TERMINAL LENGTH: 1.000 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 36.0 NOMINAL NOMINAL REGULATOR VOLTAGE
VOLTAGE TOLERANCE IN PERCENT: -5.0 TO 5.0
Related Searches:
246237-0033
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961004847977
NSN
5961-00-484-7977
246237-0033
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961004847977
NSN
5961-00-484-7977
MFG
THALES ATM INC.
Description
CURRENT RATING PER CHARACTERISTIC: 132.00 MILLIAMPERES MAXIMUM MAXIMUM DC CURRENT IN REVERSE BREAKDOWN REGION AND 30.00 MILLIAMPERES NOMINAL VOLTAGE REGULATOR DIODE CURRENT
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: GLASS
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 200.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.145 INCHES MAXIMUM
OVERALL LENGTH: 0.350 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 5.0 WATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPECIFICATION/STANDARD DATA: 80131-RELEASE5750 PROFESSIONAL/INDUSTRIAL ASSOCIATION SPECIFICATION
TERMINAL LENGTH: 1.000 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 36.0 NOMINAL NOMINAL REGULATOR VOLTAGE
VOLTAGE TOLERANCE IN PERCENT: -5.0 TO 5.0
Related Searches:
4599
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961004847977
NSN
5961-00-484-7977
MFG
VAISALA OYJ
Description
CURRENT RATING PER CHARACTERISTIC: 132.00 MILLIAMPERES MAXIMUM MAXIMUM DC CURRENT IN REVERSE BREAKDOWN REGION AND 30.00 MILLIAMPERES NOMINAL VOLTAGE REGULATOR DIODE CURRENT
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: GLASS
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 200.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.145 INCHES MAXIMUM
OVERALL LENGTH: 0.350 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 5.0 WATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPECIFICATION/STANDARD DATA: 80131-RELEASE5750 PROFESSIONAL/INDUSTRIAL ASSOCIATION SPECIFICATION
TERMINAL LENGTH: 1.000 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 36.0 NOMINAL NOMINAL REGULATOR VOLTAGE
VOLTAGE TOLERANCE IN PERCENT: -5.0 TO 5.0
Related Searches:
479-1500-011
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961004847977
NSN
5961-00-484-7977
479-1500-011
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961004847977
NSN
5961-00-484-7977
MFG
BOEING COMPANY THE DBA BOEING DIV DEFENSE SPACE & SECURITY - NETWORK & SPACE SYSTEMS
Description
CURRENT RATING PER CHARACTERISTIC: 132.00 MILLIAMPERES MAXIMUM MAXIMUM DC CURRENT IN REVERSE BREAKDOWN REGION AND 30.00 MILLIAMPERES NOMINAL VOLTAGE REGULATOR DIODE CURRENT
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: GLASS
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 200.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.145 INCHES MAXIMUM
OVERALL LENGTH: 0.350 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 5.0 WATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPECIFICATION/STANDARD DATA: 80131-RELEASE5750 PROFESSIONAL/INDUSTRIAL ASSOCIATION SPECIFICATION
TERMINAL LENGTH: 1.000 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 36.0 NOMINAL NOMINAL REGULATOR VOLTAGE
VOLTAGE TOLERANCE IN PERCENT: -5.0 TO 5.0
Related Searches:
48-08227B01
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961004847977
NSN
5961-00-484-7977
48-08227B01
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961004847977
NSN
5961-00-484-7977
MFG
VENTELO
Description
CURRENT RATING PER CHARACTERISTIC: 132.00 MILLIAMPERES MAXIMUM MAXIMUM DC CURRENT IN REVERSE BREAKDOWN REGION AND 30.00 MILLIAMPERES NOMINAL VOLTAGE REGULATOR DIODE CURRENT
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: GLASS
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 200.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.145 INCHES MAXIMUM
OVERALL LENGTH: 0.350 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 5.0 WATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPECIFICATION/STANDARD DATA: 80131-RELEASE5750 PROFESSIONAL/INDUSTRIAL ASSOCIATION SPECIFICATION
TERMINAL LENGTH: 1.000 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 36.0 NOMINAL NOMINAL REGULATOR VOLTAGE
VOLTAGE TOLERANCE IN PERCENT: -5.0 TO 5.0
Related Searches:
IN5365B
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961004847977
NSN
5961-00-484-7977
MFG
FREESCALE SEMICONDUCTOR INC.
Description
CURRENT RATING PER CHARACTERISTIC: 132.00 MILLIAMPERES MAXIMUM MAXIMUM DC CURRENT IN REVERSE BREAKDOWN REGION AND 30.00 MILLIAMPERES NOMINAL VOLTAGE REGULATOR DIODE CURRENT
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: GLASS
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 200.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.145 INCHES MAXIMUM
OVERALL LENGTH: 0.350 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 5.0 WATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPECIFICATION/STANDARD DATA: 80131-RELEASE5750 PROFESSIONAL/INDUSTRIAL ASSOCIATION SPECIFICATION
TERMINAL LENGTH: 1.000 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 36.0 NOMINAL NOMINAL REGULATOR VOLTAGE
VOLTAGE TOLERANCE IN PERCENT: -5.0 TO 5.0
Related Searches:
2817034
SEMICONDUCTOR DEVICE,THYRISTOR
NSN, MFG P/N
5961004847978
NSN
5961-00-484-7978
2817034
SEMICONDUCTOR DEVICE,THYRISTOR
NSN, MFG P/N
5961004847978
NSN
5961-00-484-7978
MFG
NAVAIR AND NAVSEA MANAGED ORIGINAL DESIGN ACTIVITY DWG NOT MATERIAL/PARTS SUPPLIER
Description
CURRENT RATING PER CHARACTERISTIC: 7.00 AMPERES MAXIMUM COLLECTOR CURRENT, DC
ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE: ANODE
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: JUNCTION CONTACT
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 100.0 DEG CELSIUS JUNCTION
MOUNTING FACILITY QUANTITY: 1
MOUNTING METHOD: THREADED STUD
NOMINAL THREAD SIZE: 0.250 INCHES
OVERALL LENGTH: 0.535 INCHES NOMINAL
OVERALL WIDTH ACROSS FLATS: 0.625 INCHES NOMINAL
POWER RATING PER CHARACTERISTIC: 0.5 WATTS MAXIMUM PEAK GATE POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: NPN
SPECIFICATION/STANDARD DATA: 80131-RELEASE5700 PROFESSIONAL/INDUSTRIAL ASSOCIATION SPECIFICATION
TERMINAL TYPE AND QUANTITY: 1 SOLDER STUD AND 2 TAB, SOLDER LUG
THREAD SERIES DESIGNATOR: UNF
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 50.0 MAXIMUM BREAKOVER VOLTAGE, DC
Related Searches:
2N5168
SEMICONDUCTOR DEVICE,THYRISTOR
NSN, MFG P/N
5961004847978
NSN
5961-00-484-7978
2N5168
SEMICONDUCTOR DEVICE,THYRISTOR
NSN, MFG P/N
5961004847978
NSN
5961-00-484-7978
MFG
ELECTRONIC INDUSTRIES ASSOCIATION
Description
CURRENT RATING PER CHARACTERISTIC: 7.00 AMPERES MAXIMUM COLLECTOR CURRENT, DC
ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE: ANODE
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: JUNCTION CONTACT
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 100.0 DEG CELSIUS JUNCTION
MOUNTING FACILITY QUANTITY: 1
MOUNTING METHOD: THREADED STUD
NOMINAL THREAD SIZE: 0.250 INCHES
OVERALL LENGTH: 0.535 INCHES NOMINAL
OVERALL WIDTH ACROSS FLATS: 0.625 INCHES NOMINAL
POWER RATING PER CHARACTERISTIC: 0.5 WATTS MAXIMUM PEAK GATE POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: NPN
SPECIFICATION/STANDARD DATA: 80131-RELEASE5700 PROFESSIONAL/INDUSTRIAL ASSOCIATION SPECIFICATION
TERMINAL TYPE AND QUANTITY: 1 SOLDER STUD AND 2 TAB, SOLDER LUG
THREAD SERIES DESIGNATOR: UNF
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 50.0 MAXIMUM BREAKOVER VOLTAGE, DC
Related Searches:
344040
SEMICONDUCTOR DEVICE,THYRISTOR
NSN, MFG P/N
5961004847978
NSN
5961-00-484-7978
344040
SEMICONDUCTOR DEVICE,THYRISTOR
NSN, MFG P/N
5961004847978
NSN
5961-00-484-7978
MFG
LOCKHEED MARTIN CORPORATION DBA LOCKHEED MARTIN MS2
Description
CURRENT RATING PER CHARACTERISTIC: 7.00 AMPERES MAXIMUM COLLECTOR CURRENT, DC
ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE: ANODE
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: JUNCTION CONTACT
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 100.0 DEG CELSIUS JUNCTION
MOUNTING FACILITY QUANTITY: 1
MOUNTING METHOD: THREADED STUD
NOMINAL THREAD SIZE: 0.250 INCHES
OVERALL LENGTH: 0.535 INCHES NOMINAL
OVERALL WIDTH ACROSS FLATS: 0.625 INCHES NOMINAL
POWER RATING PER CHARACTERISTIC: 0.5 WATTS MAXIMUM PEAK GATE POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: NPN
SPECIFICATION/STANDARD DATA: 80131-RELEASE5700 PROFESSIONAL/INDUSTRIAL ASSOCIATION SPECIFICATION
TERMINAL TYPE AND QUANTITY: 1 SOLDER STUD AND 2 TAB, SOLDER LUG
THREAD SERIES DESIGNATOR: UNF
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 50.0 MAXIMUM BREAKOVER VOLTAGE, DC
