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5961-00-757-7795
20 Products
719199-012
TRANSISTOR
NSN, MFG P/N
5961007577795
NSN
5961-00-757-7795
MFG
RAYTHEON COMPANY DBA RAYTHEON
Description
CURRENT RATING PER CHARACTERISTIC: 0.50 AMPERES MAXIMUM FORWARD GATE CURRENT AND 0.50 AMPERES MAXIMUM REVERSE GATE CURRENT
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: JUNCTION CONTACT
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 100.0 DEG CELSIUS JUNCTION
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.370 INCHES MAXIMUM
OVERALL LENGTH: 0.260 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 3.0 WATTS MAXIMUM PEAK GATE POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: NPN
TERMINAL CIRCLE DIAMETER: 0.200 INCHES NOMINAL
TERMINAL LENGTH: 1.500 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 3 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 25.0 MAXIMUM FORWARD GATE TO SOURCE BREAKDOWN VOLTAGE
Related Searches:
2A400
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961007566924
NSN
5961-00-756-6924
MFG
SOLITRON DEVICES INC SEMICONDUCTOR GROUP JUPITER OPERS
Description
CURRENT RATING PER CHARACTERISTIC: 2.00 AMPERES MAXIMUM AVERAGE FORWARD CURRENT AVERAGED OVER A FULL 60-HZ CYCLE
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 175.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.210 INCHES MAXIMUM
OVERALL LENGTH: 0.375 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
SPECIFICATION/STANDARD DATA: 80131-RELEASE5699 PROFESSIONAL/INDUSTRIAL ASSOCIATION SPECIFICATION
TERMINAL LENGTH: 1.125 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 400.0 MAXIMUM REVERSE VOLTAGE, PEAK
Related Searches:
3475-15
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961007573409
NSN
5961-00-757-3409
MFG
NORTHROP GRUMMAN SYSTEMS CORPORATION DIV ES DEFENSIVE SYSTEMS DIVISION
Description
CURRENT RATING PER CHARACTERISTIC: 5.00 MICROAMPERES MAXIMUM MAXIMUM REVERSE SURGE CURRENT
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: GLASS
MOUNTING METHOD: TERMINAL
OVERALL HEIGHT: 0.420 INCHES NOMINAL
OVERALL LENGTH: 1.240 INCHES NOMINAL
OVERALL WIDTH: 0.500 INCHES NOMINAL
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL LENGTH: 0.750 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 5000.0 MAXIMUM NOMINAL REGULATOR VOLTAGE
Related Searches:
DI550LS
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961007573409
NSN
5961-00-757-3409
MFG
DIODES INC
Description
CURRENT RATING PER CHARACTERISTIC: 5.00 MICROAMPERES MAXIMUM MAXIMUM REVERSE SURGE CURRENT
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: GLASS
MOUNTING METHOD: TERMINAL
OVERALL HEIGHT: 0.420 INCHES NOMINAL
OVERALL LENGTH: 1.240 INCHES NOMINAL
OVERALL WIDTH: 0.500 INCHES NOMINAL
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL LENGTH: 0.750 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 5000.0 MAXIMUM NOMINAL REGULATOR VOLTAGE
Related Searches:
911362-3
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961007575836
NSN
5961-00-757-5836
MFG
BAE SYSTEMS INFORMATION AND ELECTRONIC SYSTEMS INTEGRATION INC.
Description
CURRENT RATING PER CHARACTERISTIC: 7.50 MILLIAMPERES MAXIMUM VOLTAGE REGULATOR DIODE CURRENT
DESIGN CONTROL REFERENCE: 911362-3
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: GLASS
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: DO-7
MANUFACTURERS CODE: 80249
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.107 INCHES MAXIMUM
OVERALL LENGTH: 0.300 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 0.5 WATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL LENGTH: 1.000 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
THE MANUFACTURERS DATA:
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 9.0 MAXIMUM NOMINAL REGULATOR VOLTAGE
Related Searches:
911408-11
TRANSISTOR
NSN, MFG P/N
5961007575902
NSN
5961-00-757-5902
MFG
BAE SYSTEMS INFORMATION AND ELECTRONIC SYSTEMS INTEGRATION INC.
Description
(NON-CORE DATA) CHANNEL POLARITY AND CONTROL TYPE: N-CHANNEL JUNCTION TYPE
ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE: COLLECTOR
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: FIELD EFFECT
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: TO-18
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.230 INCHES MAXIMUM
OVERALL LENGTH: 0.210 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 360.0 MILLIWATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL CIRCLE DIAMETER: 0.100 INCHES NOMINAL
TERMINAL LENGTH: 0.500 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 3 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 40.0 MAXIMUM BREAKDOWN VOLTAGE, DRAIN-TO-SOURCE, WITH ALL OTHER TERMINALS SHORT-CIRCUITED TO SOURCE AND 40.0 MAXIMUM BREAKDOWN VOLTAGE, GATE-TO-SOURCE, WITH ALL OTHER TERMINALS SHORT-CIRCUITED TO SOURCE
Related Searches:
2N3771
TRANSISTOR
NSN, MFG P/N
5961007576240
NSN
5961-00-757-6240
MFG
INTERSIL CORPORATION
Description
CURRENT RATING PER CHARACTERISTIC: 7.50 AMPERES MAXIMUM BASE CURRENT, DC AND 30.00 AMPERES MAXIMUM COLLECTOR CURRENT, DC
ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE: COLLECTOR
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: JUNCTION CONTACT
INTERNAL JUNCTION CONFIGURATION: NPN
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 200.0 DEG CELSIUS JUNCTION
MOUNTING FACILITY QUANTITY: 2
MOUNTING METHOD: UNTHREADED HOLE
OVERALL DIAMETER: 0.875 INCHES MAXIMUM
OVERALL LENGTH: 0.450 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 150.0 WATTS MAXIMUM COLLECTOR POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD AND 1 CASE
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 50.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-BASE, EMITTER OPEN AND 40.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-EMITTER, BASE OPEN AND 5.0 MAXIMUM BREAKDOWN VOLTAGE, EMITTER-TO-BASE, COLLECTOR OPEN
Related Searches:
911409-11
TRANSISTOR
NSN, MFG P/N
5961007576240
NSN
5961-00-757-6240
MFG
BAE SYSTEMS INFORMATION AND ELECTRONIC SYSTEMS INTEGRATION INC.
Description
CURRENT RATING PER CHARACTERISTIC: 7.50 AMPERES MAXIMUM BASE CURRENT, DC AND 30.00 AMPERES MAXIMUM COLLECTOR CURRENT, DC
ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE: COLLECTOR
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: JUNCTION CONTACT
INTERNAL JUNCTION CONFIGURATION: NPN
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 200.0 DEG CELSIUS JUNCTION
MOUNTING FACILITY QUANTITY: 2
MOUNTING METHOD: UNTHREADED HOLE
OVERALL DIAMETER: 0.875 INCHES MAXIMUM
OVERALL LENGTH: 0.450 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 150.0 WATTS MAXIMUM COLLECTOR POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD AND 1 CASE
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 50.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-BASE, EMITTER OPEN AND 40.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-EMITTER, BASE OPEN AND 5.0 MAXIMUM BREAKDOWN VOLTAGE, EMITTER-TO-BASE, COLLECTOR OPEN
Related Searches:
JANTX1N2843B
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961007576519
NSN
5961-00-757-6519
JANTX1N2843B
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961007576519
NSN
5961-00-757-6519
MFG
MILITARY SPECIFICATIONS PROMULGATED BY MILITARY DEPARTMENTS/AGENCIES UNDER AUTHORITY OF DEFENSE STANDARDIZATION MANUAL 4120 3-M
Description
CURRENT RATING PER CHARACTERISTIC: 320.00 MILLIAMPERES MAXIMUM VOLTAGE REGULATOR DIODE CURRENT
DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: JANTX1N2843B
INCLOSURE MATERIAL: METAL
MANUFACTURERS CODE: 81349
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 175.0 DEG CELSIUS AMBIENT AIR
MOUNTING FACILITY QUANTITY: 2
MOUNTING METHOD: UNTHREADED HOLE
NON-DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: MIL-PRF-19500/114
OVERALL HEIGHT: 0.250 INCHES MINIMUM AND 0.450 INCHES MAXIMUM
OVERALL LENGTH: 1.573 INCHES MAXIMUM
OVERALL WIDTH: 1.050 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 50.0 WATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPEC/STD CONTROLLING DATA:
SPECIFICATION/STANDARD DATA: 81349-MIL-S-19500/114 GOVERNMENT SPECIFICATION
TERMINAL TYPE AND QUANTITY: 2 PIN AND 1 CASE
TEST DATA DOCUMENT: 81349-MIL-S-19500 SPECIFICATION
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 150.0 NOMINAL NOMINAL REGULATOR VOLTAGE
VOLTAGE TOLERANCE IN PERCENT: -5.0 TO
Related Searches:
JANTX1N2843BA
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961007576519
NSN
5961-00-757-6519
JANTX1N2843BA
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961007576519
NSN
5961-00-757-6519
MFG
ADELCO ELEKTRONIK GMBH
Description
CURRENT RATING PER CHARACTERISTIC: 320.00 MILLIAMPERES MAXIMUM VOLTAGE REGULATOR DIODE CURRENT
DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: JANTX1N2843B
INCLOSURE MATERIAL: METAL
MANUFACTURERS CODE: 81349
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 175.0 DEG CELSIUS AMBIENT AIR
MOUNTING FACILITY QUANTITY: 2
MOUNTING METHOD: UNTHREADED HOLE
NON-DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: MIL-PRF-19500/114
OVERALL HEIGHT: 0.250 INCHES MINIMUM AND 0.450 INCHES MAXIMUM
OVERALL LENGTH: 1.573 INCHES MAXIMUM
OVERALL WIDTH: 1.050 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 50.0 WATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPEC/STD CONTROLLING DATA:
SPECIFICATION/STANDARD DATA: 81349-MIL-S-19500/114 GOVERNMENT SPECIFICATION
TERMINAL TYPE AND QUANTITY: 2 PIN AND 1 CASE
TEST DATA DOCUMENT: 81349-MIL-S-19500 SPECIFICATION
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 150.0 NOMINAL NOMINAL REGULATOR VOLTAGE
VOLTAGE TOLERANCE IN PERCENT: -5.0 TO
Related Searches:
JANTX2N4859
TRANSISTOR
NSN, MFG P/N
5961007576526
NSN
5961-00-757-6526
MFG
MILITARY SPECIFICATIONS PROMULGATED BY MILITARY DEPARTMENTS/AGENCIES UNDER AUTHORITY OF DEFENSE STANDARDIZATION MANUAL 4120 3-M
Description
(NON-CORE DATA) CHANNEL POLARITY AND CONTROL TYPE: N-CHANNEL JUNCTION TYPE
CURRENT RATING PER CHARACTERISTIC: 50.00 MILLIAMPERES MAXIMUM GATE CURRENT
DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: JANTX2N4859
ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE: GATE
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: FIELD EFFECT
MANUFACTURERS CODE: 81349
MOUNTING METHOD: TERMINAL
NON-DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: MILS19500-385
OVERALL DIAMETER: 0.209 INCHES MINIMUM AND 0.230 INCHES MAXIMUM
OVERALL LENGTH: 0.170 INCHES MINIMUM AND 0.210 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 360.0 MILLIWATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPEC/STD CONTROLLING DATA:
SPECIFICATION/STANDARD DATA: 81349-MIL-S-19500/385 GOVERNMENT SPECIFICATION
TERMINAL CIRCLE DIAMETER: 0.100 INCHES NOMINAL
TERMINAL LENGTH: 0.500 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 3 UNINSULATED WIRE LEAD
TEST
Related Searches:
JANTX2N4859A
TRANSISTOR
NSN, MFG P/N
5961007576526
NSN
5961-00-757-6526
MFG
ADELCO ELEKTRONIK GMBH
Description
(NON-CORE DATA) CHANNEL POLARITY AND CONTROL TYPE: N-CHANNEL JUNCTION TYPE
CURRENT RATING PER CHARACTERISTIC: 50.00 MILLIAMPERES MAXIMUM GATE CURRENT
DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: JANTX2N4859
ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE: GATE
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: FIELD EFFECT
MANUFACTURERS CODE: 81349
MOUNTING METHOD: TERMINAL
NON-DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: MILS19500-385
OVERALL DIAMETER: 0.209 INCHES MINIMUM AND 0.230 INCHES MAXIMUM
OVERALL LENGTH: 0.170 INCHES MINIMUM AND 0.210 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 360.0 MILLIWATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPEC/STD CONTROLLING DATA:
SPECIFICATION/STANDARD DATA: 81349-MIL-S-19500/385 GOVERNMENT SPECIFICATION
TERMINAL CIRCLE DIAMETER: 0.100 INCHES NOMINAL
TERMINAL LENGTH: 0.500 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 3 UNINSULATED WIRE LEAD
TEST
Related Searches:
5913-2
SEMICONDUCTOR DEVICES,UNITIZED
NSN, MFG P/N
5961007577794
NSN
5961-00-757-7794
5913-2
SEMICONDUCTOR DEVICES,UNITIZED
NSN, MFG P/N
5961007577794
NSN
5961-00-757-7794
MFG
ROCKWELL COLLINS AEROSPACE & ELECTRONICS INC. DBA RC DISPLAYS SYSTEMS
Description
SEMICONDUCTOR DEVICES,UNITIZED
Related Searches:
FA2001
SEMICONDUCTOR DEVICES,UNITIZED
NSN, MFG P/N
5961007577794
NSN
5961-00-757-7794
FA2001
SEMICONDUCTOR DEVICES,UNITIZED
NSN, MFG P/N
5961007577794
NSN
5961-00-757-7794
MFG
FAIRCHILD SEMICONDUCTOR CORP
Description
SEMICONDUCTOR DEVICES,UNITIZED
Related Searches:
900120-152
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961007579285
NSN
5961-00-757-9285
900120-152
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961007579285
NSN
5961-00-757-9285
MFG
NORTHROP GRUMMAN GUIDANCE AND ELECTRONICS COMPANY INC. DBA NAVIGATION SYSTEMS DIVISION DIV NAVIGATION SYSTEMS DIVISION
Description
DESIGN CONTROL REFERENCE: 900120-152
FEATURES PROVIDED: HERMETICALLY SEALED CASE
MANUFACTURERS CODE: 06481
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
THE MANUFACTURERS DATA:
Related Searches:
JANTX1N3154
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961007581842
NSN
5961-00-758-1842
JANTX1N3154
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961007581842
NSN
5961-00-758-1842
MFG
MILITARY SPECIFICATIONS PROMULGATED BY MILITARY DEPARTMENTS/AGENCIES UNDER AUTHORITY OF DEFENSE STANDARDIZATION MANUAL 4120 3-M
Description
CURRENT RATING PER CHARACTERISTIC: 10.00 MILLIAMPERES MAXIMUM MAXIMUM REVERSE SURGE CURRENT AND 55.00 MILLIAMPERES MAXIMUM VOLTAGE REGULATOR DIODE CURRENT
DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: JANTX1N3154
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: GLASS
MANUFACTURERS CODE: 81349
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 175.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
NON-DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: MILS19500-158
OVERALL DIAMETER: 0.092 INCHES MINIMUM AND 0.130 INCHES MAXIMUM
OVERALL LENGTH: 0.230 INCHES MINIMUM AND 0.300 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 500.0 MILLIWATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPEC/STD CONTROLLING DATA:
SPECIFICATION/STANDARD DATA: 81349-MIL-S-19500/158 GOVERNMENT SPECIFICATION
TERMINAL LENGTH: 1.000 INCHES MINIMUM AND 1.500 INCHES MAXIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
TEST DATA DOCUMENT: 81349-MIL-S-19500 SPECIFICATIO
Related Searches:
619327-1
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961007582695
NSN
5961-00-758-2695
MFG
RAYTHEON COMPANY DBA RAYTHEON
Description
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: GLASS
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 150.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: PRESS FIT
OVERALL DIAMETER: 0.124 INCHES MAXIMUM
OVERALL LENGTH: 0.091 INCHES NOMINAL
POWER RATING PER CHARACTERISTIC: 2.78 WATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 2 TAB, SOLDER LUG
TEST DATA DOCUMENT: 37695-619327 DRAWING
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 100.0 MAXIMUM REVERSE VOLTAGE, DC
Related Searches:
D5911
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961007582695
NSN
5961-00-758-2695
MFG
SKYWORKS SOLUTIONS INC.
Description
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: GLASS
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 150.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: PRESS FIT
OVERALL DIAMETER: 0.124 INCHES MAXIMUM
OVERALL LENGTH: 0.091 INCHES NOMINAL
POWER RATING PER CHARACTERISTIC: 2.78 WATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 2 TAB, SOLDER LUG
TEST DATA DOCUMENT: 37695-619327 DRAWING
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 100.0 MAXIMUM REVERSE VOLTAGE, DC
Related Searches:
MA47608
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961007582695
NSN
5961-00-758-2695
MFG
M/A-COM INC. DBA TYCO ELECTRONIC WIRELESS SYSTEM
Description
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: GLASS
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 150.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: PRESS FIT
OVERALL DIAMETER: 0.124 INCHES MAXIMUM
OVERALL LENGTH: 0.091 INCHES NOMINAL
POWER RATING PER CHARACTERISTIC: 2.78 WATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 2 TAB, SOLDER LUG
TEST DATA DOCUMENT: 37695-619327 DRAWING
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 100.0 MAXIMUM REVERSE VOLTAGE, DC
Related Searches:
25408B01
SEMICONDUCTOR DEVICE,THYRISTOR
NSN, MFG P/N
5961007583690
NSN
5961-00-758-3690
25408B01
SEMICONDUCTOR DEVICE,THYRISTOR
NSN, MFG P/N
5961007583690
NSN
5961-00-758-3690
MFG
WESTINGHOUSE ELECTRIC CORP MEDIUM AC MOTOR AND GEARING DIV
Description
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INTERNAL CONFIGURATION: JUNCTION CONTACT
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: TERMINAL QTY 3
