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5961-00-149-2014

20 Products

35-161-2

SEMICONDUCTOR DEVICE,THYRISTOR

NSN, MFG P/N

5961001492014

NSN

5961-00-149-2014

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35-161-2

SEMICONDUCTOR DEVICE,THYRISTOR

NSN, MFG P/N

5961001492014

NSN

5961-00-149-2014

MFG

DRS POWER & CONTROL TECHNOLOGIES INC.

Description

CRITICALITY CODE JUSTIFICATION: ZZZY
DESIGN CONTROL REFERENCE: 35-161-2
MANUFACTURERS CODE: 27192
REFERENCE NUMBER DIFFERENTIATING CHARACTERISTICS: MATERIAL WILL BE IN ACCORDANCE WITH NAVICP MECH; ACTIVITY HX QUALITY CONTROL, MANUFACTURING AND TESTING SPECIFICATIONS.
THE MANUFACTURERS DATA:

6068D90G01

RECTIFIER,SEMICONDUCTOR DEVICE

NSN, MFG P/N

5961001491674

NSN

5961-00-149-1674

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6068D90G01

RECTIFIER,SEMICONDUCTOR DEVICE

NSN, MFG P/N

5961001491674

NSN

5961-00-149-1674

MFG

NORTHROP GRUMMAN SYSTEMS CORPORATION DBA ES POWER CONTROL SYSTEMS

Description

CRITICALITY CODE JUSTIFICATION: ZZZY
DESIGN CONTROL REFERENCE: 6068D90G01
MANUFACTURERS CODE: 04804
REFERENCE NUMBER DIFFERENTIATING CHARACTERISTICS: MATERIAL WILL BE IN ACCORDANCE WITH NAVICP MECH; ACTIVITY HX QUALITY CONTROL, MANUFACTURING AND TESTING SPECIFICATIONS.
THE MANUFACTURERS DATA:

35-161PC2

SEMICONDUCTOR DEVICE,THYRISTOR

NSN, MFG P/N

5961001492014

NSN

5961-00-149-2014

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35-161PC2

SEMICONDUCTOR DEVICE,THYRISTOR

NSN, MFG P/N

5961001492014

NSN

5961-00-149-2014

MFG

COUCH S H CO

Description

CRITICALITY CODE JUSTIFICATION: ZZZY
DESIGN CONTROL REFERENCE: 35-161-2
MANUFACTURERS CODE: 27192
REFERENCE NUMBER DIFFERENTIATING CHARACTERISTICS: MATERIAL WILL BE IN ACCORDANCE WITH NAVICP MECH; ACTIVITY HX QUALITY CONTROL, MANUFACTURING AND TESTING SPECIFICATIONS.
THE MANUFACTURERS DATA:

78-5038

SEMICONDUCTOR DEVICE,THYRISTOR

NSN, MFG P/N

5961001492014

NSN

5961-00-149-2014

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78-5038

SEMICONDUCTOR DEVICE,THYRISTOR

NSN, MFG P/N

5961001492014

NSN

5961-00-149-2014

MFG

INTERNATIONAL RECTIFIER CORPORATION

Description

CRITICALITY CODE JUSTIFICATION: ZZZY
DESIGN CONTROL REFERENCE: 35-161-2
MANUFACTURERS CODE: 27192
REFERENCE NUMBER DIFFERENTIATING CHARACTERISTICS: MATERIAL WILL BE IN ACCORDANCE WITH NAVICP MECH; ACTIVITY HX QUALITY CONTROL, MANUFACTURING AND TESTING SPECIFICATIONS.
THE MANUFACTURERS DATA:

107X00050

RECTIFIER,SEMICONDUCTOR DEVICE,UNITIZED

NSN, MFG P/N

5961001498575

NSN

5961-00-149-8575

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107X00050

RECTIFIER,SEMICONDUCTOR DEVICE,UNITIZED

NSN, MFG P/N

5961001498575

NSN

5961-00-149-8575

MFG

COMPUTER CONSOLES INC

Description

CIRCUIT CONNECTION STYLE DESIGNATOR: A7 BRIDGE 1 PHASE
OVERALL HEIGHT: 0.180 INCHES MINIMUM AND 0.395 INCHES MAXIMUM
OVERALL LENGTH: 0.590 INCHES MINIMUM AND 0.610 INCHES MAXIMUM
OVERALL WIDTH: 0.370 INCHES MINIMUM AND 0.395 INCHES MAXIMUM

3N252

RECTIFIER,SEMICONDUCTOR DEVICE,UNITIZED

NSN, MFG P/N

5961001498575

NSN

5961-00-149-8575

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3N252

RECTIFIER,SEMICONDUCTOR DEVICE,UNITIZED

NSN, MFG P/N

5961001498575

NSN

5961-00-149-8575

MFG

FREESCALE SEMICONDUCTOR INC.

Description

CIRCUIT CONNECTION STYLE DESIGNATOR: A7 BRIDGE 1 PHASE
OVERALL HEIGHT: 0.180 INCHES MINIMUM AND 0.395 INCHES MAXIMUM
OVERALL LENGTH: 0.590 INCHES MINIMUM AND 0.610 INCHES MAXIMUM
OVERALL WIDTH: 0.370 INCHES MINIMUM AND 0.395 INCHES MAXIMUM

373228

TRANSISTOR

NSN, MFG P/N

5961001498599

NSN

5961-00-149-8599

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373228

TRANSISTOR

NSN, MFG P/N

5961001498599

NSN

5961-00-149-8599

MFG

RAYTHEON TECHNICAL SERVICES COMPANY LLC DBA RAYTHEON

Description

DESIGN CONTROL REFERENCE: 373228
FEATURES PROVIDED: HERMETICALLY SEALED CASE
MANUFACTURERS CODE: 3B150
OVERALL HEIGHT: 0.500 INCHES NOMINAL
OVERALL LENGTH: 1.000 INCHES NOMINAL
OVERALL WIDTH: 0.500 INCHES NOMINAL
SEMICONDUCTOR MATERIAL: SILICON
THE MANUFACTURERS DATA:

101000106

TRANSISTOR

NSN, MFG P/N

5961001499257

NSN

5961-00-149-9257

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101000106

TRANSISTOR

NSN, MFG P/N

5961001499257

NSN

5961-00-149-9257

MFG

DATA GENERAL CORP M/S 9S17

Description

DESIGN CONTROL REFERENCE: TIP35
MANUFACTURERS CODE: 01295
OVERALL HEIGHT: 0.185 INCHES MAXIMUM
OVERALL LENGTH: 0.620 INCHES MAXIMUM
OVERALL WIDTH: 0.620 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: NPN
TERMINAL TYPE AND QUANTITY: 3 UNINSULATED WIRE LEAD
THE MANUFACTURERS DATA:

4902-00-0350

TRANSISTOR

NSN, MFG P/N

5961001499257

NSN

5961-00-149-9257

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4902-00-0350

TRANSISTOR

NSN, MFG P/N

5961001499257

NSN

5961-00-149-9257

MFG

WAVETEK U S INC DIV OF WAVETEK CORP

Description

DESIGN CONTROL REFERENCE: TIP35
MANUFACTURERS CODE: 01295
OVERALL HEIGHT: 0.185 INCHES MAXIMUM
OVERALL LENGTH: 0.620 INCHES MAXIMUM
OVERALL WIDTH: 0.620 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: NPN
TERMINAL TYPE AND QUANTITY: 3 UNINSULATED WIRE LEAD
THE MANUFACTURERS DATA:

EP174

TRANSISTOR

NSN, MFG P/N

5961001499257

NSN

5961-00-149-9257

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EP174

TRANSISTOR

NSN, MFG P/N

5961001499257

NSN

5961-00-149-9257

MFG

TEXAS INSTRUMENTS INCORPORATED DBA TEXAS INSTRUMENTS DIV SEMICONDUCTOR GROUP

Description

DESIGN CONTROL REFERENCE: TIP35
MANUFACTURERS CODE: 01295
OVERALL HEIGHT: 0.185 INCHES MAXIMUM
OVERALL LENGTH: 0.620 INCHES MAXIMUM
OVERALL WIDTH: 0.620 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: NPN
TERMINAL TYPE AND QUANTITY: 3 UNINSULATED WIRE LEAD
THE MANUFACTURERS DATA:

TIP35

TRANSISTOR

NSN, MFG P/N

5961001499257

NSN

5961-00-149-9257

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TIP35

TRANSISTOR

NSN, MFG P/N

5961001499257

NSN

5961-00-149-9257

MFG

STMICROELECTRONICS INC

Description

DESIGN CONTROL REFERENCE: TIP35
MANUFACTURERS CODE: 01295
OVERALL HEIGHT: 0.185 INCHES MAXIMUM
OVERALL LENGTH: 0.620 INCHES MAXIMUM
OVERALL WIDTH: 0.620 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: NPN
TERMINAL TYPE AND QUANTITY: 3 UNINSULATED WIRE LEAD
THE MANUFACTURERS DATA:

197840-000

COVER,SEMICONDUCTOR DEVICE

NSN, MFG P/N

5961001500302

NSN

5961-00-150-0302

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197840-000

COVER,SEMICONDUCTOR DEVICE

NSN, MFG P/N

5961001500302

NSN

5961-00-150-0302

MFG

BAE SYSTEMS INFORMATION AND ELECTRONIC SYSTEMS INTEGRATION I

Description

III END ITEM IDENTIFICATION: AIRBORNE RADAR
MATERIAL: ALUMINUM ALLOY
OVERALL DIAMETER: 0.562 INCHES NOMINAL
OVERALL HEIGHT: 0.093 INCHES NOMINAL

742024-1

SEMICONDUCTOR DEVICES,UNITIZED

NSN, MFG P/N

5961001500303

NSN

5961-00-150-0303

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742024-1

SEMICONDUCTOR DEVICES,UNITIZED

NSN, MFG P/N

5961001500303

NSN

5961-00-150-0303

MFG

RAYTHEON COMPANY

Description

DESIGN CONTROL REFERENCE: 742024-1
MANUFACTURERS CODE: 96214
OVERALL LENGTH: 0.500 INCHES NOMINAL
SPECIAL FEATURES: MARK CATHODE END WITH BLACK DOT; MINIMUM TEMP REQUIRED FOR SHRINKAGE IS135 DEGREE CELSIUS
THE MANUFACTURERS DATA:

197897

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961001500305

NSN

5961-00-150-0305

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197897

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961001500305

NSN

5961-00-150-0305

MFG

FLUKE CORPORATION

Description

III END ITEM IDENTIFICATION: ELECTRICAL AND ELECTRONIC PROPERTIES,MEASURING AND TESTING EQUIPMENT

80860-1

SEMICONDUCTOR DEVICE,THYRISTOR

NSN, MFG P/N

5961001500440

NSN

5961-00-150-0440

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80860-1

SEMICONDUCTOR DEVICE,THYRISTOR

NSN, MFG P/N

5961001500440

NSN

5961-00-150-0440

MFG

HAMILTON SUNDSTRAND CORPORATION

Description

CURRENT RATING PER CHARACTERISTIC: 500.00 MILLIAMPERES MAXIMUM FORWARD CURRENT, DC AND 200.00 MICROAMPERES MAXIMUM GATE TRIGGER CURRENT, DC AND 5.00 MILLIAMPERES MAXIMUM HOLDING CURRENT, DC
ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE: ANODE
INCLOSURE MATERIAL: GLASS AND METAL
INTERNAL CONFIGURATION: JUNCTION CONTACT
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 150.0 DEG CELSIUS JUNCTION
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.210 INCHES MINIMUM AND 0.225 INCHES MAXIMUM
OVERALL LENGTH: 0.195 INCHES MINIMUM AND 0.205 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: NPNP
TERMINAL CIRCLE DIAMETER: 0.090 INCHES MINIMUM AND 0.110 INCHES MAXIMUM
TERMINAL LENGTH: 0.500 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 3 UNINSULATED WIRE LEAD
TEST DATA DOCUMENT: 07148-80860 DRAWING
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 1.5 MAXIMUM ON VOLTAGE, FORWARD VOLTAGE DROP, DC AND 0.8 MAXIMUM GATE TRIGGER VOLTAGE, DC

BA1127

SEMICONDUCTOR DEVICE,THYRISTOR

NSN, MFG P/N

5961001500440

NSN

5961-00-150-0440

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BA1127

SEMICONDUCTOR DEVICE,THYRISTOR

NSN, MFG P/N

5961001500440

NSN

5961-00-150-0440

MFG

MICRO USPD INC

Description

CURRENT RATING PER CHARACTERISTIC: 500.00 MILLIAMPERES MAXIMUM FORWARD CURRENT, DC AND 200.00 MICROAMPERES MAXIMUM GATE TRIGGER CURRENT, DC AND 5.00 MILLIAMPERES MAXIMUM HOLDING CURRENT, DC
ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE: ANODE
INCLOSURE MATERIAL: GLASS AND METAL
INTERNAL CONFIGURATION: JUNCTION CONTACT
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 150.0 DEG CELSIUS JUNCTION
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.210 INCHES MINIMUM AND 0.225 INCHES MAXIMUM
OVERALL LENGTH: 0.195 INCHES MINIMUM AND 0.205 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: NPNP
TERMINAL CIRCLE DIAMETER: 0.090 INCHES MINIMUM AND 0.110 INCHES MAXIMUM
TERMINAL LENGTH: 0.500 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 3 UNINSULATED WIRE LEAD
TEST DATA DOCUMENT: 07148-80860 DRAWING
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 1.5 MAXIMUM ON VOLTAGE, FORWARD VOLTAGE DROP, DC AND 0.8 MAXIMUM GATE TRIGGER VOLTAGE, DC

44-033339-01

TRANSISTOR

NSN, MFG P/N

5961001500526

NSN

5961-00-150-0526

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44-033339-01

TRANSISTOR

NSN, MFG P/N

5961001500526

NSN

5961-00-150-0526

MFG

NORTHROP GRUMMAN SYSTEMS CORPORATION DIV ES DEFENSIVE SYSTEMS DIVISION

Description

DESIGN CONTROL REFERENCE: 44-033339-01
MANUFACTURERS CODE: 15280
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: NPN
THE MANUFACTURERS DATA:

SS5915

TRANSISTOR

NSN, MFG P/N

5961001500526

NSN

5961-00-150-0526

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SS5915

TRANSISTOR

NSN, MFG P/N

5961001500526

NSN

5961-00-150-0526

MFG

FREESCALE SEMICONDUCTOR INC.

Description

DESIGN CONTROL REFERENCE: 44-033339-01
MANUFACTURERS CODE: 15280
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: NPN
THE MANUFACTURERS DATA:

1N5241

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961001500672

NSN

5961-00-150-0672

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1N5241

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961001500672

NSN

5961-00-150-0672

MFG

ELECTRONIC INDUSTRIES ASSOCIATION

Description

CURRENT RATING PER CHARACTERISTIC: 20.00 MILLIAMPERES NOMINAL VOLTAGE REGULATOR DIODE CURRENT
FEATURES PROVIDED: HERMETICALLY SEALED CASE
FUNCTION FOR WHICH DESIGNED: ZENER DIODE
INCLOSURE MATERIAL: GLASS
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: DO-204AH
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 200.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.075 INCHES NOMINAL
OVERALL LENGTH: 0.160 INCHES NOMINAL
POWER RATING PER CHARACTERISTIC: 500.0 MILLIWATTS MAXIMUM TOTAL DEVICE DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPECIFICATION/STANDARD DATA: 80131-RELEASE5566 PROFESSIONAL/INDUSTRIAL ASSOCIATION SPECIFICATION
TERMINAL LENGTH: 1.250 INCHES NOMINAL
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 11.0 NOMINAL NOMINAL REGULATOR VOLTAGE
VOLTAGE TOLERANCE IN PERCENT: -5.0 TO 5.0

1N5241A

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961001500672

NSN

5961-00-150-0672

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1N5241A

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961001500672

NSN

5961-00-150-0672

MFG

FREESCALE SEMICONDUCTOR INC.

Description

CURRENT RATING PER CHARACTERISTIC: 20.00 MILLIAMPERES NOMINAL VOLTAGE REGULATOR DIODE CURRENT
FEATURES PROVIDED: HERMETICALLY SEALED CASE
FUNCTION FOR WHICH DESIGNED: ZENER DIODE
INCLOSURE MATERIAL: GLASS
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: DO-204AH
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 200.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.075 INCHES NOMINAL
OVERALL LENGTH: 0.160 INCHES NOMINAL
POWER RATING PER CHARACTERISTIC: 500.0 MILLIWATTS MAXIMUM TOTAL DEVICE DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPECIFICATION/STANDARD DATA: 80131-RELEASE5566 PROFESSIONAL/INDUSTRIAL ASSOCIATION SPECIFICATION
TERMINAL LENGTH: 1.250 INCHES NOMINAL
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 11.0 NOMINAL NOMINAL REGULATOR VOLTAGE
VOLTAGE TOLERANCE IN PERCENT: -5.0 TO 5.0