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5961-00-172-2893

20 Products

1N4193A

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961001722893

NSN

5961-00-172-2893

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1N4193A

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961001722893

NSN

5961-00-172-2893

MFG

TEXAS INSTRUMENTS INCORPORATED DBA TEXAS INSTRUMENTS DIV SEMICONDUCTOR GROUP

Description

CURRENT RATING PER CHARACTERISTIC: 72.00 MILLIAMPERES MAXIMUM PEAK REVERSE SURGE CURRENT
DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: JAN1N4496
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: GLASS
MANUFACTURERS CODE: 81349
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 175.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
NON-DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: MILS19500-406
OVERALL DIAMETER: 0.060 INCHES MINIMUM AND 0.085 INCHES MAXIMUM
OVERALL LENGTH: 0.125 INCHES MINIMUM AND 0.160 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 1.5 WATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPEC/STD CONTROLLING DATA:
SPECIFICATION/STANDARD DATA: 81349-MIL-S-19500/406 GOVERNMENT SPECIFICATION
TERMINAL LENGTH: 0.800 INCHES MINIMUM AND 1.300 INCHES MAXIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
TEST DATA DOCUMENT: 81349-MIL-S-19500 SPECIFICATION
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 200.0 MAXIMUM NOMINAL REGU

48A53703B001

TRANSISTOR

NSN, MFG P/N

5961001721571

NSN

5961-00-172-1571

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48A53703B001

TRANSISTOR

NSN, MFG P/N

5961001721571

NSN

5961-00-172-1571

MFG

MOTOROLA INC MOTOROLA AUTOMOTIVE ELECTRONICS

Description

DESIGN CONTROL REFERENCE: MM2614
ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE: COLLECTOR
INTERNAL CONFIGURATION: JUNCTION CONTACT
MANUFACTURERS CODE: 31211
OVERALL DIAMETER: 0.209 INCHES MINIMUM AND 0.230 INCHES MAXIMUM
OVERALL LENGTH: 0.170 INCHES MINIMUM AND 0.210 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: PNP
TERMINAL TYPE AND QUANTITY: 3 PIN
THE MANUFACTURERS DATA:

SM6539

TRANSISTOR

NSN, MFG P/N

5961001721699

NSN

5961-00-172-1699

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SM6539

TRANSISTOR

NSN, MFG P/N

5961001721699

NSN

5961-00-172-1699

MFG

MOTOROLA INC. DBA INTEGRATED INFORMATION SYSTEMS GROUP

Description

DESIGN CONTROL REFERENCE: SM6539
INTERNAL CONFIGURATION: JUNCTION CONTACT
MANUFACTURERS CODE: 94990
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: PNP
THE MANUFACTURERS DATA:

SM6536

TRANSISTOR

NSN, MFG P/N

5961001721700

NSN

5961-00-172-1700

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SM6536

TRANSISTOR

NSN, MFG P/N

5961001721700

NSN

5961-00-172-1700

MFG

MOTOROLA INC. DBA INTEGRATED INFORMATION SYSTEMS GROUP

Description

DESIGN CONTROL REFERENCE: SM6536
INTERNAL CONFIGURATION: JUNCTION CONTACT
MANUFACTURERS CODE: 94990
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: PNP
THE MANUFACTURERS DATA:

04115885-000

TRANSISTOR

NSN, MFG P/N

5961001721730

NSN

5961-00-172-1730

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04115885-000

TRANSISTOR

NSN, MFG P/N

5961001721730

NSN

5961-00-172-1730

MFG

FAIRCHILD SEMICONDUCTOR CORP PCB-TEST TESTLINE DIV SUB OF SCHLUMBERGER LTD

Description

CURRENT RATING PER CHARACTERISTIC: 25.00 AMPERES MAXIMUM COLLECTOR CURRENT, DC
ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE: COLLECTOR
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: JUNCTION CONTACT
INTERNAL JUNCTION CONFIGURATION: NPN
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 200.0 DEG CELSIUS JUNCTION
MOUNTING FACILITY QUANTITY: 2
MOUNTING METHOD: UNTHREADED HOLE
OVERALL DIAMETER: 0.875 INCHES MAXIMUM
OVERALL HEIGHT: 0.450 INCHES MAXIMUM
OVERALL LENGTH: 0.350 INCHES NOMINAL
POWER RATING PER CHARACTERISTIC: 200.0 WATTS MAXIMUM COLLECTOR POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 2 PIN
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 60.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-BASE, EMITTER OPEN

13220E4148

TRANSISTOR

NSN, MFG P/N

5961001721730

NSN

5961-00-172-1730

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13220E4148

TRANSISTOR

NSN, MFG P/N

5961001721730

NSN

5961-00-172-1730

MFG

CECOM LR CENTER

Description

CURRENT RATING PER CHARACTERISTIC: 25.00 AMPERES MAXIMUM COLLECTOR CURRENT, DC
ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE: COLLECTOR
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: JUNCTION CONTACT
INTERNAL JUNCTION CONFIGURATION: NPN
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 200.0 DEG CELSIUS JUNCTION
MOUNTING FACILITY QUANTITY: 2
MOUNTING METHOD: UNTHREADED HOLE
OVERALL DIAMETER: 0.875 INCHES MAXIMUM
OVERALL HEIGHT: 0.450 INCHES MAXIMUM
OVERALL LENGTH: 0.350 INCHES NOMINAL
POWER RATING PER CHARACTERISTIC: 200.0 WATTS MAXIMUM COLLECTOR POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 2 PIN
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 60.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-BASE, EMITTER OPEN

1854-0679

TRANSISTOR

NSN, MFG P/N

5961001721730

NSN

5961-00-172-1730

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1854-0679

TRANSISTOR

NSN, MFG P/N

5961001721730

NSN

5961-00-172-1730

MFG

AGILENT TECHNOLOGIES INC. DIV AGILENT TECHNOLOGIES HEADQUARTERS

Description

CURRENT RATING PER CHARACTERISTIC: 25.00 AMPERES MAXIMUM COLLECTOR CURRENT, DC
ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE: COLLECTOR
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: JUNCTION CONTACT
INTERNAL JUNCTION CONFIGURATION: NPN
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 200.0 DEG CELSIUS JUNCTION
MOUNTING FACILITY QUANTITY: 2
MOUNTING METHOD: UNTHREADED HOLE
OVERALL DIAMETER: 0.875 INCHES MAXIMUM
OVERALL HEIGHT: 0.450 INCHES MAXIMUM
OVERALL LENGTH: 0.350 INCHES NOMINAL
POWER RATING PER CHARACTERISTIC: 200.0 WATTS MAXIMUM COLLECTOR POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 2 PIN
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 60.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-BASE, EMITTER OPEN

2N5885

TRANSISTOR

NSN, MFG P/N

5961001721730

NSN

5961-00-172-1730

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2N5885

TRANSISTOR

NSN, MFG P/N

5961001721730

NSN

5961-00-172-1730

MFG

ELECTRONIC INDUSTRIES ASSOCIATION

Description

CURRENT RATING PER CHARACTERISTIC: 25.00 AMPERES MAXIMUM COLLECTOR CURRENT, DC
ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE: COLLECTOR
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: JUNCTION CONTACT
INTERNAL JUNCTION CONFIGURATION: NPN
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 200.0 DEG CELSIUS JUNCTION
MOUNTING FACILITY QUANTITY: 2
MOUNTING METHOD: UNTHREADED HOLE
OVERALL DIAMETER: 0.875 INCHES MAXIMUM
OVERALL HEIGHT: 0.450 INCHES MAXIMUM
OVERALL LENGTH: 0.350 INCHES NOMINAL
POWER RATING PER CHARACTERISTIC: 200.0 WATTS MAXIMUM COLLECTOR POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 2 PIN
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 60.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-BASE, EMITTER OPEN

2N5885A

TRANSISTOR

NSN, MFG P/N

5961001721730

NSN

5961-00-172-1730

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2N5885A

TRANSISTOR

NSN, MFG P/N

5961001721730

NSN

5961-00-172-1730

MFG

ADELCO ELEKTRONIK GMBH

Description

CURRENT RATING PER CHARACTERISTIC: 25.00 AMPERES MAXIMUM COLLECTOR CURRENT, DC
ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE: COLLECTOR
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: JUNCTION CONTACT
INTERNAL JUNCTION CONFIGURATION: NPN
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 200.0 DEG CELSIUS JUNCTION
MOUNTING FACILITY QUANTITY: 2
MOUNTING METHOD: UNTHREADED HOLE
OVERALL DIAMETER: 0.875 INCHES MAXIMUM
OVERALL HEIGHT: 0.450 INCHES MAXIMUM
OVERALL LENGTH: 0.350 INCHES NOMINAL
POWER RATING PER CHARACTERISTIC: 200.0 WATTS MAXIMUM COLLECTOR POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 2 PIN
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 60.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-BASE, EMITTER OPEN

3700294

TRANSISTOR

NSN, MFG P/N

5961001721730

NSN

5961-00-172-1730

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3700294

TRANSISTOR

NSN, MFG P/N

5961001721730

NSN

5961-00-172-1730

MFG

ITT TELECOM PRODUCTS CORP NETWORK SYSTEMS DIV

Description

CURRENT RATING PER CHARACTERISTIC: 25.00 AMPERES MAXIMUM COLLECTOR CURRENT, DC
ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE: COLLECTOR
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: JUNCTION CONTACT
INTERNAL JUNCTION CONFIGURATION: NPN
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 200.0 DEG CELSIUS JUNCTION
MOUNTING FACILITY QUANTITY: 2
MOUNTING METHOD: UNTHREADED HOLE
OVERALL DIAMETER: 0.875 INCHES MAXIMUM
OVERALL HEIGHT: 0.450 INCHES MAXIMUM
OVERALL LENGTH: 0.350 INCHES NOMINAL
POWER RATING PER CHARACTERISTIC: 200.0 WATTS MAXIMUM COLLECTOR POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 2 PIN
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 60.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-BASE, EMITTER OPEN

404374

TRANSISTOR

NSN, MFG P/N

5961001721730

NSN

5961-00-172-1730

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404374

TRANSISTOR

NSN, MFG P/N

5961001721730

NSN

5961-00-172-1730

MFG

CARDION INC

Description

CURRENT RATING PER CHARACTERISTIC: 25.00 AMPERES MAXIMUM COLLECTOR CURRENT, DC
ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE: COLLECTOR
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: JUNCTION CONTACT
INTERNAL JUNCTION CONFIGURATION: NPN
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 200.0 DEG CELSIUS JUNCTION
MOUNTING FACILITY QUANTITY: 2
MOUNTING METHOD: UNTHREADED HOLE
OVERALL DIAMETER: 0.875 INCHES MAXIMUM
OVERALL HEIGHT: 0.450 INCHES MAXIMUM
OVERALL LENGTH: 0.350 INCHES NOMINAL
POWER RATING PER CHARACTERISTIC: 200.0 WATTS MAXIMUM COLLECTOR POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 2 PIN
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 60.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-BASE, EMITTER OPEN

1N3893R

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961001721733

NSN

5961-00-172-1733

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1N3893R

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961001721733

NSN

5961-00-172-1733

MFG

MILITARY SPECIFICATIONS PROMULGATED BY MILITARY DEPARTMENTS/AGENCIES UNDER AUTHORITY OF DEFENSE STANDARDIZATION MANUAL 4120 3-M

Description

CURRENT RATING PER CHARACTERISTIC: 15.00 MICROAMPERES MAXIMUM REVERSE CURRENT, DC
DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: JAN1N3893R
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
MANUFACTURERS CODE: 81349
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 150.0 DEG CELSIUS CASE
MOUNTING FACILITY QUANTITY: 1
MOUNTING METHOD: THREADED STUD
NOMINAL THREAD SIZE: 0.190 INCHES
NON-DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: MIL-PRF-19500/304
OVERALL DIAMETER: 0.437 INCHES MAXIMUM
OVERALL HEIGHT: 0.405 INCHES MAXIMUM
OVERALL LENGTH: 0.405 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
SPEC/STD CONTROLLING DATA:
SPECIFICATION/STANDARD DATA: 81349-MIL-S-19500/304 GOVERNMENT SPECIFICATION
TERMINAL TYPE AND QUANTITY: 1 THREADED STUD AND 1 TAB, SOLDER LUG
TEST DATA DOCUMENT: 81349-MIL-S-19500 SPECIFICATION
THREAD SERIES DESIGNATOR: UNF
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 400.0 NOMINAL WORKING PEAK REVERSE VOLTAGE

564382

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961001721733

NSN

5961-00-172-1733

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564382

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961001721733

NSN

5961-00-172-1733

MFG

SELEX COMMUNICATIONS GMBH

Description

CURRENT RATING PER CHARACTERISTIC: 15.00 MICROAMPERES MAXIMUM REVERSE CURRENT, DC
DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: JAN1N3893R
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
MANUFACTURERS CODE: 81349
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 150.0 DEG CELSIUS CASE
MOUNTING FACILITY QUANTITY: 1
MOUNTING METHOD: THREADED STUD
NOMINAL THREAD SIZE: 0.190 INCHES
NON-DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: MIL-PRF-19500/304
OVERALL DIAMETER: 0.437 INCHES MAXIMUM
OVERALL HEIGHT: 0.405 INCHES MAXIMUM
OVERALL LENGTH: 0.405 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
SPEC/STD CONTROLLING DATA:
SPECIFICATION/STANDARD DATA: 81349-MIL-S-19500/304 GOVERNMENT SPECIFICATION
TERMINAL TYPE AND QUANTITY: 1 THREADED STUD AND 1 TAB, SOLDER LUG
TEST DATA DOCUMENT: 81349-MIL-S-19500 SPECIFICATION
THREAD SERIES DESIGNATOR: UNF
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 400.0 NOMINAL WORKING PEAK REVERSE VOLTAGE

JAN1N3893R

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961001721733

NSN

5961-00-172-1733

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JAN1N3893R

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961001721733

NSN

5961-00-172-1733

MFG

MOTOROLA UK SALES LTD MOTOROLA SEM ICONDUCTORS GROUP

Description

CURRENT RATING PER CHARACTERISTIC: 15.00 MICROAMPERES MAXIMUM REVERSE CURRENT, DC
DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: JAN1N3893R
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
MANUFACTURERS CODE: 81349
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 150.0 DEG CELSIUS CASE
MOUNTING FACILITY QUANTITY: 1
MOUNTING METHOD: THREADED STUD
NOMINAL THREAD SIZE: 0.190 INCHES
NON-DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: MIL-PRF-19500/304
OVERALL DIAMETER: 0.437 INCHES MAXIMUM
OVERALL HEIGHT: 0.405 INCHES MAXIMUM
OVERALL LENGTH: 0.405 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
SPEC/STD CONTROLLING DATA:
SPECIFICATION/STANDARD DATA: 81349-MIL-S-19500/304 GOVERNMENT SPECIFICATION
TERMINAL TYPE AND QUANTITY: 1 THREADED STUD AND 1 TAB, SOLDER LUG
TEST DATA DOCUMENT: 81349-MIL-S-19500 SPECIFICATION
THREAD SERIES DESIGNATOR: UNF
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 400.0 NOMINAL WORKING PEAK REVERSE VOLTAGE

JAN1N3893RA

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961001721733

NSN

5961-00-172-1733

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JAN1N3893RA

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961001721733

NSN

5961-00-172-1733

MFG

ADELCO ELEKTRONIK GMBH

Description

CURRENT RATING PER CHARACTERISTIC: 15.00 MICROAMPERES MAXIMUM REVERSE CURRENT, DC
DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: JAN1N3893R
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
MANUFACTURERS CODE: 81349
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 150.0 DEG CELSIUS CASE
MOUNTING FACILITY QUANTITY: 1
MOUNTING METHOD: THREADED STUD
NOMINAL THREAD SIZE: 0.190 INCHES
NON-DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: MIL-PRF-19500/304
OVERALL DIAMETER: 0.437 INCHES MAXIMUM
OVERALL HEIGHT: 0.405 INCHES MAXIMUM
OVERALL LENGTH: 0.405 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
SPEC/STD CONTROLLING DATA:
SPECIFICATION/STANDARD DATA: 81349-MIL-S-19500/304 GOVERNMENT SPECIFICATION
TERMINAL TYPE AND QUANTITY: 1 THREADED STUD AND 1 TAB, SOLDER LUG
TEST DATA DOCUMENT: 81349-MIL-S-19500 SPECIFICATION
THREAD SERIES DESIGNATOR: UNF
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 400.0 NOMINAL WORKING PEAK REVERSE VOLTAGE

1N5281

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961001722893

NSN

5961-00-172-2893

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1N5281

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961001722893

NSN

5961-00-172-2893

MFG

FREESCALE SEMICONDUCTOR INC.

Description

CURRENT RATING PER CHARACTERISTIC: 72.00 MILLIAMPERES MAXIMUM PEAK REVERSE SURGE CURRENT
DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: JAN1N4496
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: GLASS
MANUFACTURERS CODE: 81349
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 175.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
NON-DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: MILS19500-406
OVERALL DIAMETER: 0.060 INCHES MINIMUM AND 0.085 INCHES MAXIMUM
OVERALL LENGTH: 0.125 INCHES MINIMUM AND 0.160 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 1.5 WATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPEC/STD CONTROLLING DATA:
SPECIFICATION/STANDARD DATA: 81349-MIL-S-19500/406 GOVERNMENT SPECIFICATION
TERMINAL LENGTH: 0.800 INCHES MINIMUM AND 1.300 INCHES MAXIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
TEST DATA DOCUMENT: 81349-MIL-S-19500 SPECIFICATION
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 200.0 MAXIMUM NOMINAL REGU

7892145-245

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961001722893

NSN

5961-00-172-2893

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7892145-245

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961001722893

NSN

5961-00-172-2893

MFG

DELCO ELECTRONICS CORP DELCO SYSTEMS OPNS

Description

CURRENT RATING PER CHARACTERISTIC: 72.00 MILLIAMPERES MAXIMUM PEAK REVERSE SURGE CURRENT
DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: JAN1N4496
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: GLASS
MANUFACTURERS CODE: 81349
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 175.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
NON-DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: MILS19500-406
OVERALL DIAMETER: 0.060 INCHES MINIMUM AND 0.085 INCHES MAXIMUM
OVERALL LENGTH: 0.125 INCHES MINIMUM AND 0.160 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 1.5 WATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPEC/STD CONTROLLING DATA:
SPECIFICATION/STANDARD DATA: 81349-MIL-S-19500/406 GOVERNMENT SPECIFICATION
TERMINAL LENGTH: 0.800 INCHES MINIMUM AND 1.300 INCHES MAXIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
TEST DATA DOCUMENT: 81349-MIL-S-19500 SPECIFICATION
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 200.0 MAXIMUM NOMINAL REGU

JAN1N4496

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961001722893

NSN

5961-00-172-2893

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JAN1N4496

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961001722893

NSN

5961-00-172-2893

MFG

MILITARY SPECIFICATIONS PROMULGATED BY MILITARY DEPARTMENTS/AGENCIES UNDER AUTHORITY OF DEFENSE STANDARDIZATION MANUAL 4120 3-M

Description

CURRENT RATING PER CHARACTERISTIC: 72.00 MILLIAMPERES MAXIMUM PEAK REVERSE SURGE CURRENT
DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: JAN1N4496
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: GLASS
MANUFACTURERS CODE: 81349
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 175.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
NON-DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: MILS19500-406
OVERALL DIAMETER: 0.060 INCHES MINIMUM AND 0.085 INCHES MAXIMUM
OVERALL LENGTH: 0.125 INCHES MINIMUM AND 0.160 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 1.5 WATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPEC/STD CONTROLLING DATA:
SPECIFICATION/STANDARD DATA: 81349-MIL-S-19500/406 GOVERNMENT SPECIFICATION
TERMINAL LENGTH: 0.800 INCHES MINIMUM AND 1.300 INCHES MAXIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
TEST DATA DOCUMENT: 81349-MIL-S-19500 SPECIFICATION
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 200.0 MAXIMUM NOMINAL REGU

928364-104

TRANSISTOR

NSN, MFG P/N

5961001722936

NSN

5961-00-172-2936

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928364-104

TRANSISTOR

NSN, MFG P/N

5961001722936

NSN

5961-00-172-2936

MFG

RAYTHEON COMPANY

Description

CURRENT RATING PER CHARACTERISTIC: 2.00 AMPERES MAXIMUM BASE CURRENT, DC AND 10.00 AMPERES MAXIMUM COLLECTOR CURRENT, DC
FEATURES PROVIDED: HERMETICALLY SEALED CASE
III PRECIOUS MATERIAL: GOLD
III PRECIOUS MATERIAL AND LOCATION: TERMINAL SURFACES GOLD
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: JUNCTION CONTACT
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 200.0 DEG CELSIUS JUNCTION
MOUNTING FACILITY QUANTITY: 1
MOUNTING METHOD: THREADED STUD
NOMINAL THREAD SIZE: 0.216 INCHES
OVERALL LENGTH: 0.235 INCHES MINIMUM AND 0.310 INCHES MAXIMUM
OVERALL WIDTH ACROSS FLATS: 0.677 INCHES NOMINAL
POWER RATING PER CHARACTERISTIC: 70.0 WATTS MAXIMUM COLLECTOR POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: NPN
TERMINAL TYPE AND QUANTITY: 3 TAB, SOLDER LUG
TEST DATA DOCUMENT: 82577-928364 DRAWING
THREAD SERIES DESIGNATOR: UNC
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 100.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-B

MHT7004

TRANSISTOR

NSN, MFG P/N

5961001722936

NSN

5961-00-172-2936

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MHT7004

TRANSISTOR

NSN, MFG P/N

5961001722936

NSN

5961-00-172-2936

MFG

SOLITRON DEVICES INC.

Description

CURRENT RATING PER CHARACTERISTIC: 2.00 AMPERES MAXIMUM BASE CURRENT, DC AND 10.00 AMPERES MAXIMUM COLLECTOR CURRENT, DC
FEATURES PROVIDED: HERMETICALLY SEALED CASE
III PRECIOUS MATERIAL: GOLD
III PRECIOUS MATERIAL AND LOCATION: TERMINAL SURFACES GOLD
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: JUNCTION CONTACT
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 200.0 DEG CELSIUS JUNCTION
MOUNTING FACILITY QUANTITY: 1
MOUNTING METHOD: THREADED STUD
NOMINAL THREAD SIZE: 0.216 INCHES
OVERALL LENGTH: 0.235 INCHES MINIMUM AND 0.310 INCHES MAXIMUM
OVERALL WIDTH ACROSS FLATS: 0.677 INCHES NOMINAL
POWER RATING PER CHARACTERISTIC: 70.0 WATTS MAXIMUM COLLECTOR POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: NPN
TERMINAL TYPE AND QUANTITY: 3 TAB, SOLDER LUG
TEST DATA DOCUMENT: 82577-928364 DRAWING
THREAD SERIES DESIGNATOR: UNC
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 100.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-B