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5961-00-854-3039
20 Products
936371
TRANSISTOR
NSN, MFG P/N
5961008543039
NSN
5961-00-854-3039
MFG
HONEYWELL INTERNATIONAL INC DBA HONEYWELL DIV AEROSPACE-MINNEAPOLIS
Description
DESIGN CONTROL REFERENCE: 936371
FEATURES PROVIDED: HERMETICALLY SEALED CASE
III END ITEM IDENTIFICATION: PART NO. BG158C1
INTERNAL CONFIGURATION: JUNCTION CONTACT
MANUFACTURERS CODE: 94580
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: BLUE INK DOT; JUNCTION PATTERN ARRANGEMENT: NPN
TERMINAL TYPE AND QUANTITY: 3 UNINSULATED WIRE LEAD
THE MANUFACTURERS DATA:
Related Searches:
66-2962
RECTIFIER,SEMICONDUCTOR DEVICE
NSN, MFG P/N
5961008541780
NSN
5961-00-854-1780
66-2962
RECTIFIER,SEMICONDUCTOR DEVICE
NSN, MFG P/N
5961008541780
NSN
5961-00-854-1780
MFG
INTERNATIONAL RECTIFIER CORPORATION
Description
ABSOLUTE MAXIMUM CURRENT RATING PER CHARACTERISTIC: 190.00 AMPERES FORWARD CURRENT, DC
ABSOLUTE MAXIMUM VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 62.0 FORWARD VOLTAGE, TOTAL RMS
CIRCUIT CONNECTION STYLE DESIGNATOR: 7 BRIDGE 1 PHASE
MATERIAL: SILICON
MOUNTING METHOD: UNTHREADED HOLE
OVERALL HEIGHT: 7.000 INCHES NOMINAL
OVERALL LENGTH: 9.250 INCHES NOMINAL
OVERALL WIDTH: 4.000 INCHES NOMINAL
TERMINAL TYPE AND QUANTITY: 6 TAB W/SCREW
Related Searches:
2N1118
TRANSISTOR
NSN, MFG P/N
5961008542730
NSN
5961-00-854-2730
MFG
BOURNS INSTRUMENTS INC
Description
DESIGN CONTROL REFERENCE: 2N1118
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INTERNAL CONFIGURATION: JUNCTION CONTACT
INTERNAL JUNCTION CONFIGURATION: PNP
MANUFACTURERS CODE: 80294
SEMICONDUCTOR MATERIAL: SILICON
THE MANUFACTURERS DATA:
Related Searches:
1064937
TRANSISTOR
NSN, MFG P/N
5961008543037
NSN
5961-00-854-3037
MFG
ITT CORPORATION
Description
DESIGN CONTROL REFERENCE: 1064937
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INTERNAL CONFIGURATION: JUNCTION CONTACT
MANUFACTURERS CODE: 28527
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: NPN
TERMINAL TYPE AND QUANTITY: 3 UNINSULATED WIRE LEAD
THE MANUFACTURERS DATA:
Related Searches:
935698
TRANSISTOR
NSN, MFG P/N
5961008543038
NSN
5961-00-854-3038
MFG
HONEYWELL INTERNATIONAL INC DBA HONEYWELL DIV AEROSPACE-MINNEAPOLIS
Description
DESIGN CONTROL REFERENCE: 935698
FEATURES PROVIDED: HERMETICALLY SEALED CASE
III END ITEM IDENTIFICATION: PART NO. BG158C1
INTERNAL CONFIGURATION: JUNCTION CONTACT
MANUFACTURERS CODE: 94580
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: PNP
TERMINAL TYPE AND QUANTITY: 3 UNINSULATED WIRE LEAD
THE MANUFACTURERS DATA:
Related Searches:
TS86
TRANSISTOR
NSN, MFG P/N
5961008543038
NSN
5961-00-854-3038
MFG
NORTEL NETWORKS
Description
DESIGN CONTROL REFERENCE: 935698
FEATURES PROVIDED: HERMETICALLY SEALED CASE
III END ITEM IDENTIFICATION: PART NO. BG158C1
INTERNAL CONFIGURATION: JUNCTION CONTACT
MANUFACTURERS CODE: 94580
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: PNP
TERMINAL TYPE AND QUANTITY: 3 UNINSULATED WIRE LEAD
THE MANUFACTURERS DATA:
Related Searches:
3732
TRANSISTOR
NSN, MFG P/N
5961008543040
NSN
5961-00-854-3040
MFG
INTERSIL CORPORATION
Description
DESIGN CONTROL REFERENCE: 936393
FEATURES PROVIDED: HERMETICALLY SEALED CASE
III END ITEM IDENTIFICATION: PART NO. BG158C1
INTERNAL CONFIGURATION: JUNCTION CONTACT
MANUFACTURERS CODE: 94580
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: NPN
TERMINAL TYPE AND QUANTITY: 3 UNINSULATED WIRE LEAD
THE MANUFACTURERS DATA:
Related Searches:
936393
TRANSISTOR
NSN, MFG P/N
5961008543040
NSN
5961-00-854-3040
MFG
HONEYWELL INTERNATIONAL INC DBA HONEYWELL DIV AEROSPACE-MINNEAPOLIS
Description
DESIGN CONTROL REFERENCE: 936393
FEATURES PROVIDED: HERMETICALLY SEALED CASE
III END ITEM IDENTIFICATION: PART NO. BG158C1
INTERNAL CONFIGURATION: JUNCTION CONTACT
MANUFACTURERS CODE: 94580
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: NPN
TERMINAL TYPE AND QUANTITY: 3 UNINSULATED WIRE LEAD
THE MANUFACTURERS DATA:
Related Searches:
STC1201
TRANSISTOR
NSN, MFG P/N
5961008543040
NSN
5961-00-854-3040
MFG
SILICON TRANSISTOR CORP SUB OF BBF INC
Description
DESIGN CONTROL REFERENCE: 936393
FEATURES PROVIDED: HERMETICALLY SEALED CASE
III END ITEM IDENTIFICATION: PART NO. BG158C1
INTERNAL CONFIGURATION: JUNCTION CONTACT
MANUFACTURERS CODE: 94580
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: NPN
TERMINAL TYPE AND QUANTITY: 3 UNINSULATED WIRE LEAD
THE MANUFACTURERS DATA:
Related Searches:
1N1836RA
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961008543042
NSN
5961-00-854-3042
MFG
RAYTHEON COMPANY
Description
DESIGN CONTROL REFERENCE: 1N1836RA
FEATURES PROVIDED: HERMETICALLY SEALED CASE
MANUFACTURERS CODE: 96214
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: CATHODE TO STUD CONFIGURATION
TERMINAL TYPE AND QUANTITY: 2 TAB, SOLDER LUG
THE MANUFACTURERS DATA:
Related Searches:
900299-6
RECTIFIER,SEMICONDUCTOR DEVICE
NSN, MFG P/N
5961008543043
NSN
5961-00-854-3043
900299-6
RECTIFIER,SEMICONDUCTOR DEVICE
NSN, MFG P/N
5961008543043
NSN
5961-00-854-3043
MFG
NORTHROP GRUMMAN GUIDANCE AND ELECTRONICS COMPANY INC. DBA NAVIGATION SYSTEMS DIVISION DIV NAVIGATION SYSTEMS DIVISION
Description
CIRCUIT CONNECTION STYLE DESIGNATOR: 7 BRIDGE 1 PHASE
MATERIAL: SILICON
OPERATING TEMP RANGE: -55.0 TO 200.0 DEG CELSIUS
OVERALL DIAMETER: 0.380 INCHES NOMINAL
OVERALL LENGTH: 0.600 INCHES NOMINAL
TERMINAL TYPE AND QUANTITY: 4 INSULATED WIRE LEAD
Related Searches:
PS2277
RECTIFIER,SEMICONDUCTOR DEVICE
NSN, MFG P/N
5961008543043
NSN
5961-00-854-3043
PS2277
RECTIFIER,SEMICONDUCTOR DEVICE
NSN, MFG P/N
5961008543043
NSN
5961-00-854-3043
MFG
TRW ELECTRONICS AND DEFENSE SECTOR RF DEVICES
Description
CIRCUIT CONNECTION STYLE DESIGNATOR: 7 BRIDGE 1 PHASE
MATERIAL: SILICON
OPERATING TEMP RANGE: -55.0 TO 200.0 DEG CELSIUS
OVERALL DIAMETER: 0.380 INCHES NOMINAL
OVERALL LENGTH: 0.600 INCHES NOMINAL
TERMINAL TYPE AND QUANTITY: 4 INSULATED WIRE LEAD
Related Searches:
900299-9
SEMICONDUCTOR DEVICE SET
NSN, MFG P/N
5961008543044
NSN
5961-00-854-3044
MFG
NORTHROP GRUMMAN GUIDANCE AND ELECTRONICS COMPANY INC. DBA NAVIGATION SYSTEMS DIVISION DIV NAVIGATION SYSTEMS DIVISION
Description
COMPONENT FUNCTION RELATIONSHIP: MATCHED
COMPONENT NAME AND QUANTITY: 3 SEMICONDUCTOR DEVICE DIODE
Related Searches:
CA1955
SEMICONDUCTOR DEVICE SET
NSN, MFG P/N
5961008543044
NSN
5961-00-854-3044
MFG
TELCOM SEMICONDUCTOR INC
Description
COMPONENT FUNCTION RELATIONSHIP: MATCHED
COMPONENT NAME AND QUANTITY: 3 SEMICONDUCTOR DEVICE DIODE
Related Searches:
CA1955X
SEMICONDUCTOR DEVICE SET
NSN, MFG P/N
5961008543044
NSN
5961-00-854-3044
MFG
MICROSEMI CORPORATION
Description
COMPONENT FUNCTION RELATIONSHIP: MATCHED
COMPONENT NAME AND QUANTITY: 3 SEMICONDUCTOR DEVICE DIODE
Related Searches:
4014644-0705
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961008543070
NSN
5961-00-854-3070
4014644-0705
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961008543070
NSN
5961-00-854-3070
MFG
RAYTHEON COMPANY DBA RAYTHEON
Description
FEATURES PROVIDED: HERMETICALLY SEALED CASE
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
Related Searches:
V100B
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961008543070
NSN
5961-00-854-3070
MFG
TRW EQUIPMENT CLEVELAND
Description
FEATURES PROVIDED: HERMETICALLY SEALED CASE
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
Related Searches:
4014644-0701
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961008543071
NSN
5961-00-854-3071
4014644-0701
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961008543071
NSN
5961-00-854-3071
MFG
RAYTHEON COMPANY DBA RAYTHEON
Description
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: GLASS
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.092 INCHES MINIMUM AND 0.104 INCHES MAXIMUM
OVERALL LENGTH: 0.300 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 500.0 MILLIWATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL LENGTH: 1.000 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 25.0 MAXIMUM REVERSE VOLTAGE, PEAK
Related Searches:
V47B
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961008543071
NSN
5961-00-854-3071
MFG
TRW EQUIPMENT CLEVELAND
Description
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: GLASS
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.092 INCHES MINIMUM AND 0.104 INCHES MAXIMUM
OVERALL LENGTH: 0.300 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 500.0 MILLIWATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL LENGTH: 1.000 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 25.0 MAXIMUM REVERSE VOLTAGE, PEAK
Related Searches:
4014644-0702
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961008543072
NSN
5961-00-854-3072
4014644-0702
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961008543072
NSN
5961-00-854-3072
MFG
RAYTHEON COMPANY DBA RAYTHEON
Description
FEATURES PROVIDED: HERMETICALLY SEALED CASE
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
