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5961-00-486-6074

20 Products

402H09

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961004866074

NSN

5961-00-486-6074

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402H09

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961004866074

NSN

5961-00-486-6074

MFG

WESTINGHOUSE ELECTRIC CORP SEMICONDUCTOR DIV

2566882

TRANSISTOR

NSN, MFG P/N

5961004860298

NSN

5961-00-486-0298

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2566882

TRANSISTOR

NSN, MFG P/N

5961004860298

NSN

5961-00-486-0298

MFG

NAVAIR AND NAVSEA MANAGED ORIGINAL DESIGN ACTIVITY DWG NOT MATERIAL/PARTS SUPPLIER

Description

CURRENT RATING PER CHARACTERISTIC: 6.00 AMPERES MAXIMUM COLLECTOR CURRENT, DC AND 1.00 AMPERES MAXIMUM BASE CURRENT, DC
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: JUNCTION CONTACT
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 100.0 DEG CELSIUS JUNCTION
MOUNTING FACILITY QUANTITY: 2
MOUNTING METHOD: UNTHREADED HOLE
OVERALL HEIGHT: 0.410 INCHES MAXIMUM
OVERALL LENGTH: 1.560 INCHES MAXIMUM
OVERALL WIDTH: 1.050 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 30.0 WATTS MAXIMUM COLLECTOR POWER DISSIPATION
SEMICONDUCTOR MATERIAL: GERMANIUM
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: PNP
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD AND 1 CASE
TRANSFER RATIO: 30.0 MAXIMUM STATIC FORWARD CURRENT TRANSFER RATIO, COMMON-EMITTER
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 80.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-BASE, EMITTER OPEN AND 40.0 MAXIMUM EMITTER TO BASE VOLTAGE, STATIC, COLLECTOR OPEN AND 60.0 MAXIMUM

2N1666

TRANSISTOR

NSN, MFG P/N

5961004860298

NSN

5961-00-486-0298

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2N1666

TRANSISTOR

NSN, MFG P/N

5961004860298

NSN

5961-00-486-0298

MFG

GPD OPTOELECTRONICS CORP.

Description

CURRENT RATING PER CHARACTERISTIC: 6.00 AMPERES MAXIMUM COLLECTOR CURRENT, DC AND 1.00 AMPERES MAXIMUM BASE CURRENT, DC
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: JUNCTION CONTACT
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 100.0 DEG CELSIUS JUNCTION
MOUNTING FACILITY QUANTITY: 2
MOUNTING METHOD: UNTHREADED HOLE
OVERALL HEIGHT: 0.410 INCHES MAXIMUM
OVERALL LENGTH: 1.560 INCHES MAXIMUM
OVERALL WIDTH: 1.050 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 30.0 WATTS MAXIMUM COLLECTOR POWER DISSIPATION
SEMICONDUCTOR MATERIAL: GERMANIUM
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: PNP
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD AND 1 CASE
TRANSFER RATIO: 30.0 MAXIMUM STATIC FORWARD CURRENT TRANSFER RATIO, COMMON-EMITTER
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 80.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-BASE, EMITTER OPEN AND 40.0 MAXIMUM EMITTER TO BASE VOLTAGE, STATIC, COLLECTOR OPEN AND 60.0 MAXIMUM

A80840-02

RECTIFIER MODULE

NSN, MFG P/N

5961004860924

NSN

5961-00-486-0924

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A80840-02

RECTIFIER MODULE

NSN, MFG P/N

5961004860924

NSN

5961-00-486-0924

MFG

VDO CONTROL SYSTEMS INC

938D679-11

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961004866074

NSN

5961-00-486-6074

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938D679-11

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961004866074

NSN

5961-00-486-6074

MFG

HAMILTON SUNDSTRAND CORPORATION

D8197AJ

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961004866074

NSN

5961-00-486-6074

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D8197AJ

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961004866074

NSN

5961-00-486-6074

MFG

MICROSEMI CORP-COLORADO

NH938D679-11

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961004866074

NSN

5961-00-486-6074

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NH938D679-11

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961004866074

NSN

5961-00-486-6074

MFG

DLA LAND AND MARITIME

1993832-2

TRANSISTOR

NSN, MFG P/N

5961004866082

NSN

5961-00-486-6082

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1993832-2

TRANSISTOR

NSN, MFG P/N

5961004866082

NSN

5961-00-486-6082

MFG

HONEYWELL INTERNATIONAL INC DBA HONEYWELL DIV AEROSPACE-MINNEAPOLIS

Description

ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE: COLLECTOR
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: JUNCTION CONTACT
INTERNAL JUNCTION CONFIGURATION: NPN
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 200.0 DEG CELSIUS JUNCTION
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.370 INCHES MAXIMUM
OVERALL LENGTH: 0.260 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 15.0 WATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL LENGTH: 1.500 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 3 UNINSULATED WIRE LEAD
TEST DATA DOCUMENT: 94580-1993832 DRAWING
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 155.0 MAXIMUM COLLECTOR TO BASE VOLTAGE/STATIC/EMITTER OPEN AND 100.0 MAXIMUM COLLECTOR TO EMITTER VOLTAGE/STATIC/BASE OPEN AND 7.0 MAXIMUM EMITTER TO BASE VOLTAGE, STATIC, COLLECTOR OPEN

2N2990

TRANSISTOR

NSN, MFG P/N

5961004866082

NSN

5961-00-486-6082

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2N2990

TRANSISTOR

NSN, MFG P/N

5961004866082

NSN

5961-00-486-6082

MFG

SILICON TRANSISTOR CORP SUB OF BBF INC

Description

ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE: COLLECTOR
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: JUNCTION CONTACT
INTERNAL JUNCTION CONFIGURATION: NPN
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 200.0 DEG CELSIUS JUNCTION
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.370 INCHES MAXIMUM
OVERALL LENGTH: 0.260 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 15.0 WATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL LENGTH: 1.500 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 3 UNINSULATED WIRE LEAD
TEST DATA DOCUMENT: 94580-1993832 DRAWING
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 155.0 MAXIMUM COLLECTOR TO BASE VOLTAGE/STATIC/EMITTER OPEN AND 100.0 MAXIMUM COLLECTOR TO EMITTER VOLTAGE/STATIC/BASE OPEN AND 7.0 MAXIMUM EMITTER TO BASE VOLTAGE, STATIC, COLLECTOR OPEN

91SP-522

TRANSISTOR

NSN, MFG P/N

5961004866082

NSN

5961-00-486-6082

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91SP-522

TRANSISTOR

NSN, MFG P/N

5961004866082

NSN

5961-00-486-6082

MFG

SOLITRON DEVICES INC.

Description

ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE: COLLECTOR
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: JUNCTION CONTACT
INTERNAL JUNCTION CONFIGURATION: NPN
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 200.0 DEG CELSIUS JUNCTION
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.370 INCHES MAXIMUM
OVERALL LENGTH: 0.260 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 15.0 WATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL LENGTH: 1.500 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 3 UNINSULATED WIRE LEAD
TEST DATA DOCUMENT: 94580-1993832 DRAWING
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 155.0 MAXIMUM COLLECTOR TO BASE VOLTAGE/STATIC/EMITTER OPEN AND 100.0 MAXIMUM COLLECTOR TO EMITTER VOLTAGE/STATIC/BASE OPEN AND 7.0 MAXIMUM EMITTER TO BASE VOLTAGE, STATIC, COLLECTOR OPEN

1N751

SEMICONDUCTOR DEVICE SET

NSN, MFG P/N

5961004866084

NSN

5961-00-486-6084

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1N751

SEMICONDUCTOR DEVICE SET

NSN, MFG P/N

5961004866084

NSN

5961-00-486-6084

MFG

INTERNATIONAL RECTIFIER CORPORATION

Description

CURRENT RATING PER CHARACTERISTIC: 20.00 MILLIAMPERES MAXIMUM MAXIMUM REVERSE SURGE CURRENT
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: GLASS
MANUFACTURERS CODE: 98897
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 175.0 DEG CELSIUS AMBIENT AIR
MFR SOURCE CONTROLLING REFERENCE: 4V99300-101A
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.125 INCHES MINIMUM AND 0.300 INCHES MAXIMUM
OVERALL LENGTH: 0.230 INCHES MINIMUM AND 0.300 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 400.0 MILLIWATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPEC/STD CONTROLLING DATA:
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 5.1 MAXIMUM NOMINAL REGULATOR VOLTAGE

1N751A

SEMICONDUCTOR DEVICE SET

NSN, MFG P/N

5961004866084

NSN

5961-00-486-6084

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1N751A

SEMICONDUCTOR DEVICE SET

NSN, MFG P/N

5961004866084

NSN

5961-00-486-6084

MFG

MILITARY SPECIFICATIONS PROMULGATED BY MILITARY DEPARTMENTS/AGENCIES UNDER AUTHORITY OF DEFENSE STANDARDIZATION MANUAL 4120 3-M

Description

CURRENT RATING PER CHARACTERISTIC: 20.00 MILLIAMPERES MAXIMUM MAXIMUM REVERSE SURGE CURRENT
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: GLASS
MANUFACTURERS CODE: 98897
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 175.0 DEG CELSIUS AMBIENT AIR
MFR SOURCE CONTROLLING REFERENCE: 4V99300-101A
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.125 INCHES MINIMUM AND 0.300 INCHES MAXIMUM
OVERALL LENGTH: 0.230 INCHES MINIMUM AND 0.300 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 400.0 MILLIWATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPEC/STD CONTROLLING DATA:
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 5.1 MAXIMUM NOMINAL REGULATOR VOLTAGE

4V99300-101A

SEMICONDUCTOR DEVICE SET

NSN, MFG P/N

5961004866084

NSN

5961-00-486-6084

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4V99300-101A

SEMICONDUCTOR DEVICE SET

NSN, MFG P/N

5961004866084

NSN

5961-00-486-6084

MFG

LOCKHEED MARTIN CORPORATION DBA LOCKHEED MARTIN

Description

CURRENT RATING PER CHARACTERISTIC: 20.00 MILLIAMPERES MAXIMUM MAXIMUM REVERSE SURGE CURRENT
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: GLASS
MANUFACTURERS CODE: 98897
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 175.0 DEG CELSIUS AMBIENT AIR
MFR SOURCE CONTROLLING REFERENCE: 4V99300-101A
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.125 INCHES MINIMUM AND 0.300 INCHES MAXIMUM
OVERALL LENGTH: 0.230 INCHES MINIMUM AND 0.300 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 400.0 MILLIWATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPEC/STD CONTROLLING DATA:
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 5.1 MAXIMUM NOMINAL REGULATOR VOLTAGE

DZ010202A

SEMICONDUCTOR DEVICE SET

NSN, MFG P/N

5961004866084

NSN

5961-00-486-6084

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DZ010202A

SEMICONDUCTOR DEVICE SET

NSN, MFG P/N

5961004866084

NSN

5961-00-486-6084

MFG

MICROSEMI CORP.-SCOTTSDALE DBA MICROSEMI

Description

CURRENT RATING PER CHARACTERISTIC: 20.00 MILLIAMPERES MAXIMUM MAXIMUM REVERSE SURGE CURRENT
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: GLASS
MANUFACTURERS CODE: 98897
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 175.0 DEG CELSIUS AMBIENT AIR
MFR SOURCE CONTROLLING REFERENCE: 4V99300-101A
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.125 INCHES MINIMUM AND 0.300 INCHES MAXIMUM
OVERALL LENGTH: 0.230 INCHES MINIMUM AND 0.300 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 400.0 MILLIWATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPEC/STD CONTROLLING DATA:
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 5.1 MAXIMUM NOMINAL REGULATOR VOLTAGE

JAN1N751A

SEMICONDUCTOR DEVICE SET

NSN, MFG P/N

5961004866084

NSN

5961-00-486-6084

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JAN1N751A

SEMICONDUCTOR DEVICE SET

NSN, MFG P/N

5961004866084

NSN

5961-00-486-6084

MFG

FREESCALE SEMICONDUCTOR INC.

Description

CURRENT RATING PER CHARACTERISTIC: 20.00 MILLIAMPERES MAXIMUM MAXIMUM REVERSE SURGE CURRENT
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: GLASS
MANUFACTURERS CODE: 98897
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 175.0 DEG CELSIUS AMBIENT AIR
MFR SOURCE CONTROLLING REFERENCE: 4V99300-101A
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.125 INCHES MINIMUM AND 0.300 INCHES MAXIMUM
OVERALL LENGTH: 0.230 INCHES MINIMUM AND 0.300 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 400.0 MILLIWATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPEC/STD CONTROLLING DATA:
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 5.1 MAXIMUM NOMINAL REGULATOR VOLTAGE

JAN1N751AA

SEMICONDUCTOR DEVICE SET

NSN, MFG P/N

5961004866084

NSN

5961-00-486-6084

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JAN1N751AA

SEMICONDUCTOR DEVICE SET

NSN, MFG P/N

5961004866084

NSN

5961-00-486-6084

MFG

ADELCO ELEKTRONIK GMBH

Description

CURRENT RATING PER CHARACTERISTIC: 20.00 MILLIAMPERES MAXIMUM MAXIMUM REVERSE SURGE CURRENT
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: GLASS
MANUFACTURERS CODE: 98897
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 175.0 DEG CELSIUS AMBIENT AIR
MFR SOURCE CONTROLLING REFERENCE: 4V99300-101A
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.125 INCHES MINIMUM AND 0.300 INCHES MAXIMUM
OVERALL LENGTH: 0.230 INCHES MINIMUM AND 0.300 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 400.0 MILLIWATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPEC/STD CONTROLLING DATA:
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 5.1 MAXIMUM NOMINAL REGULATOR VOLTAGE

TP37123

SEMICONDUCTOR DEVICE SET

NSN, MFG P/N

5961004866084

NSN

5961-00-486-6084

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TP37123

SEMICONDUCTOR DEVICE SET

NSN, MFG P/N

5961004866084

NSN

5961-00-486-6084

MFG

TELCOM SEMICONDUCTOR INC

Description

CURRENT RATING PER CHARACTERISTIC: 20.00 MILLIAMPERES MAXIMUM MAXIMUM REVERSE SURGE CURRENT
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: GLASS
MANUFACTURERS CODE: 98897
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 175.0 DEG CELSIUS AMBIENT AIR
MFR SOURCE CONTROLLING REFERENCE: 4V99300-101A
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.125 INCHES MINIMUM AND 0.300 INCHES MAXIMUM
OVERALL LENGTH: 0.230 INCHES MINIMUM AND 0.300 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 400.0 MILLIWATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPEC/STD CONTROLLING DATA:
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 5.1 MAXIMUM NOMINAL REGULATOR VOLTAGE

CX776

RECTIFIER,SEMICONDUCTOR DEVICE,UNITIZED

NSN, MFG P/N

5961004866093

NSN

5961-00-486-6093

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CX776

RECTIFIER,SEMICONDUCTOR DEVICE,UNITIZED

NSN, MFG P/N

5961004866093

NSN

5961-00-486-6093

MFG

MICRO USPD INC

Description

MANUFACTURERS CODE: 09344
MFR SOURCE CONTROLLING REFERENCE: PS70796-1
SPEC/STD CONTROLLING DATA:
SPECIAL FEATURES: NONCONDUCTIVE EPOXY SEALED;1.135 IN. MAX LG;0.760 IN. MAX W;0.950 IN. H

PS70796-1

RECTIFIER,SEMICONDUCTOR DEVICE,UNITIZED

NSN, MFG P/N

5961004866093

NSN

5961-00-486-6093

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PS70796-1

RECTIFIER,SEMICONDUCTOR DEVICE,UNITIZED

NSN, MFG P/N

5961004866093

NSN

5961-00-486-6093

MFG

ROCKWELL COLLINS AEROSPACE & ELECTRONICS INC. DBA RC DISPLAYS SYSTEMS

Description

MANUFACTURERS CODE: 09344
MFR SOURCE CONTROLLING REFERENCE: PS70796-1
SPEC/STD CONTROLLING DATA:
SPECIAL FEATURES: NONCONDUCTIVE EPOXY SEALED;1.135 IN. MAX LG;0.760 IN. MAX W;0.950 IN. H

SA3202

RECTIFIER,SEMICONDUCTOR DEVICE,UNITIZED

NSN, MFG P/N

5961004866093

NSN

5961-00-486-6093

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SA3202

RECTIFIER,SEMICONDUCTOR DEVICE,UNITIZED

NSN, MFG P/N

5961004866093

NSN

5961-00-486-6093

MFG

SEMTECH CORPORATION

Description

MANUFACTURERS CODE: 09344
MFR SOURCE CONTROLLING REFERENCE: PS70796-1
SPEC/STD CONTROLLING DATA:
SPECIAL FEATURES: NONCONDUCTIVE EPOXY SEALED;1.135 IN. MAX LG;0.760 IN. MAX W;0.950 IN. H