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5961-00-251-7577

20 Products

1N23BM

SEMICONDUCTOR DEVICE SET

NSN, MFG P/N

5961002517577

NSN

5961-00-251-7577

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1N23BM

SEMICONDUCTOR DEVICE SET

NSN, MFG P/N

5961002517577

NSN

5961-00-251-7577

MFG

GENERAL DYNAMICS C4 SYSTEMS INC.

Description

COMPONENT FUNCTION RELATIONSHIP: MATCHED
COMPONENT NAME AND QUANTITY: 2 SEMICONDUCTOR DEVICE DIODE
DESIGN CONTROL REFERENCE: 1N23BM
MANUFACTURERS CODE: 04655
SPECIAL FEATURES: SYLVANIA ELECTRIC PRODUCTS INC. CONTROLLING AGENCY; COMPONENT TYPE NO. 1N23B
THE MANUFACTURERS DATA:

F917-2

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961002516634

NSN

5961-00-251-6634

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F917-2

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961002516634

NSN

5961-00-251-6634

MFG

SOLITRON DEVICES INC.

Description

CURRENT RATING PER CHARACTERISTIC: 0.30 AMPERES MAXIMUM FORWARD CURRENT, AVERAGE AND 1.00 AMPERES MAXIMUM REPETITIVE PEAK FORWARD CURRENT AND 25.00 AMPERES MAXIMUM PEAK FORWARD SURGE CURRENT
INCLOSURE MATERIAL: GLASS
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 175.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 4.6 MILLIMETERS MAXIMUM
OVERALL LENGTH: 10.7 MILLIMETERS MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL LENGTH: 25.4 MILLIMETERS MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 7500.0 MAXIMUM REPETITIVE PEAK REVERSE VOLTAGE AND 7500.0 MAXIMUM WORKING PEAK REVERSE VOLTAGE

SCE50

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961002516634

NSN

5961-00-251-6634

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SCE50

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961002516634

NSN

5961-00-251-6634

MFG

SEMTECH CORPORATION

Description

CURRENT RATING PER CHARACTERISTIC: 0.30 AMPERES MAXIMUM FORWARD CURRENT, AVERAGE AND 1.00 AMPERES MAXIMUM REPETITIVE PEAK FORWARD CURRENT AND 25.00 AMPERES MAXIMUM PEAK FORWARD SURGE CURRENT
INCLOSURE MATERIAL: GLASS
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 175.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 4.6 MILLIMETERS MAXIMUM
OVERALL LENGTH: 10.7 MILLIMETERS MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL LENGTH: 25.4 MILLIMETERS MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 7500.0 MAXIMUM REPETITIVE PEAK REVERSE VOLTAGE AND 7500.0 MAXIMUM WORKING PEAK REVERSE VOLTAGE

W41292-F6200-B110

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961002516634

NSN

5961-00-251-6634

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W41292-F6200-B110

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961002516634

NSN

5961-00-251-6634

MFG

EADS DEUTSCHLAND GMBH DEFENCE ELECTR ONICS ABTEILUNG VELB6

Description

CURRENT RATING PER CHARACTERISTIC: 0.30 AMPERES MAXIMUM FORWARD CURRENT, AVERAGE AND 1.00 AMPERES MAXIMUM REPETITIVE PEAK FORWARD CURRENT AND 25.00 AMPERES MAXIMUM PEAK FORWARD SURGE CURRENT
INCLOSURE MATERIAL: GLASS
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 175.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 4.6 MILLIMETERS MAXIMUM
OVERALL LENGTH: 10.7 MILLIMETERS MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL LENGTH: 25.4 MILLIMETERS MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 7500.0 MAXIMUM REPETITIVE PEAK REVERSE VOLTAGE AND 7500.0 MAXIMUM WORKING PEAK REVERSE VOLTAGE

10041411

TRANSISTOR

NSN, MFG P/N

5961002517526

NSN

5961-00-251-7526

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10041411

TRANSISTOR

NSN, MFG P/N

5961002517526

NSN

5961-00-251-7526

MFG

U S ARMY AVIATION AND MISSILE COMMAND

Description

CURRENT RATING PER CHARACTERISTIC: 500.00 MILLIAMPERES MAXIMUM BASE CURRENT, DC AND 1.00 AMPERES MAXIMUM COLLECTOR CURRENT, DC
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: JUNCTION CONTACT
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 200.0 DEG CELSIUS JUNCTION
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.335 INCHES MINIMUM AND 0.370 INCHES MAXIMUM
OVERALL LENGTH: 0.240 INCHES MINIMUM AND 0.260 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 7.0 WATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: PNP
TERMINAL CIRCLE DIAMETER: 0.200 INCHES NOMINAL
TERMINAL LENGTH: 1.500 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 3 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: -90.0 MAXIMUM COLLECTOR TO BASE VOLTAGE/STATIC/EMITTER OPEN AND -65.0 MAXIMUM COLLECTOR TO EMITTER VOLTAGE/STATIC/BASE OPEN AND -7.0 MAXIMUM EMITTER TO BASE VOLTAGE, STATIC, COLLE

2N4314

TRANSISTOR

NSN, MFG P/N

5961002517526

NSN

5961-00-251-7526

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2N4314

TRANSISTOR

NSN, MFG P/N

5961002517526

NSN

5961-00-251-7526

MFG

INTERSIL CORPORATION

Description

CURRENT RATING PER CHARACTERISTIC: 500.00 MILLIAMPERES MAXIMUM BASE CURRENT, DC AND 1.00 AMPERES MAXIMUM COLLECTOR CURRENT, DC
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: JUNCTION CONTACT
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 200.0 DEG CELSIUS JUNCTION
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.335 INCHES MINIMUM AND 0.370 INCHES MAXIMUM
OVERALL LENGTH: 0.240 INCHES MINIMUM AND 0.260 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 7.0 WATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: PNP
TERMINAL CIRCLE DIAMETER: 0.200 INCHES NOMINAL
TERMINAL LENGTH: 1.500 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 3 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: -90.0 MAXIMUM COLLECTOR TO BASE VOLTAGE/STATIC/EMITTER OPEN AND -65.0 MAXIMUM COLLECTOR TO EMITTER VOLTAGE/STATIC/BASE OPEN AND -7.0 MAXIMUM EMITTER TO BASE VOLTAGE, STATIC, COLLE

1N4142

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961002517557

NSN

5961-00-251-7557

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1N4142

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961002517557

NSN

5961-00-251-7557

MFG

ELECTRONIC INDUSTRIES ASSOCIATION

Description

CURRENT RATING PER CHARACTERISTIC: 3.00 AMPERES MAXIMUM AVERAGE FORWARD CURRENT AVERAGED OVER A FULL 60-HZ CYCLE
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: GLASS
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 175.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.285 INCHES MINIMUM AND 0.315 INCHES MAXIMUM
OVERALL LENGTH: 1.860 INCHES NOMINAL
SEMICONDUCTOR MATERIAL: SILICON
SPECIFICATION/STANDARD DATA: 80131-RELEASE4399 PROFESSIONAL/INDUSTRIAL ASSOCIATION SPECIFICATION
TERMINAL LENGTH: 0.750 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 400.0 MAXIMUM REVERSE VOLTAGE, PEAK

713389

SEMICONDUCTOR DEVICE SET

NSN, MFG P/N

5961002517577

NSN

5961-00-251-7577

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713389

SEMICONDUCTOR DEVICE SET

NSN, MFG P/N

5961002517577

NSN

5961-00-251-7577

MFG

LOCKHEED MARTIN CORPORATION DBA LOCKHEED MARTIN MS2

Description

COMPONENT FUNCTION RELATIONSHIP: MATCHED
COMPONENT NAME AND QUANTITY: 2 SEMICONDUCTOR DEVICE DIODE
DESIGN CONTROL REFERENCE: 1N23BM
MANUFACTURERS CODE: 04655
SPECIAL FEATURES: SYLVANIA ELECTRIC PRODUCTS INC. CONTROLLING AGENCY; COMPONENT TYPE NO. 1N23B
THE MANUFACTURERS DATA:

IN23BM

SEMICONDUCTOR DEVICE SET

NSN, MFG P/N

5961002517577

NSN

5961-00-251-7577

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IN23BM

SEMICONDUCTOR DEVICE SET

NSN, MFG P/N

5961002517577

NSN

5961-00-251-7577

MFG

MILITARY SPECIFICATIONS PROMULGATED BY MILITARY DEPARTMENTS/AGENCIES UNDER AUTHORITY OF DEFENSE STANDARDIZATION MANUAL 4120 3-M

Description

COMPONENT FUNCTION RELATIONSHIP: MATCHED
COMPONENT NAME AND QUANTITY: 2 SEMICONDUCTOR DEVICE DIODE
DESIGN CONTROL REFERENCE: 1N23BM
MANUFACTURERS CODE: 04655
SPECIAL FEATURES: SYLVANIA ELECTRIC PRODUCTS INC. CONTROLLING AGENCY; COMPONENT TYPE NO. 1N23B
THE MANUFACTURERS DATA:

1850-0103

TRANSISTOR

NSN, MFG P/N

5961002517580

NSN

5961-00-251-7580

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1850-0103

TRANSISTOR

NSN, MFG P/N

5961002517580

NSN

5961-00-251-7580

MFG

AGILENT TECHNOLOGIES INC. DBA NORTH AMERICAN CONTACT CENTER DIV AGILENT BUSINESS CENTER

Description

CRITICALITY CODE JUSTIFICATION: FEAT
CURRENT RATING PER CHARACTERISTIC: 30.00 MILLIAMPERES MAXIMUM COLLECTOR CURRENT, DC
FEATURES PROVIDED: HERMETICALLY SEALED CASE
III END ITEM IDENTIFICATION: AUSTIN SHIP CLASS LPD-4 AMPHIBIOUS TRANSPORT DOCKS, STURGEON CLASS SSN (637), TICONDEROGA CLASS CG (47), NIMITZ CLASS CVN, OLIVER PERRY CLASS FFG, SPRUANCE CLASS DD, KIDD CLASS DDG, FORRESTAL CLASS CV, VIRGINIA CLASS CGN (41)
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: JUNCTION CONTACT
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.265 INCHES NOMINAL
OVERALL LENGTH: 0.335 INCHES NOMINAL
POWER RATING PER CHARACTERISTIC: 125.0 MILLIWATTS MAXIMUM COLLECTOR POWER DISSIPATION
SEMICONDUCTOR MATERIAL: GERMANIUM
SPECIAL FEATURES: WEAPON SYSTEM ESSENTIAL; JUNCTION PATTERN ARRANGEMENT: PNP
SPECIFICATION/STANDARD DATA: 80131-RELEASE3959 PROFESSIONAL/INDUSTRIAL ASSOCIATION SPECIFICATION
TERMINAL CIRCLE DIAMETER: 0.100 INCHES NOMINAL
TERMINAL LENGTH: 1.500 INCHES MINIMUM
TERMINAL TY

2N2190

TRANSISTOR

NSN, MFG P/N

5961002517580

NSN

5961-00-251-7580

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2N2190

TRANSISTOR

NSN, MFG P/N

5961002517580

NSN

5961-00-251-7580

MFG

ELECTRONIC INDUSTRIES ASSOCIATION

Description

CRITICALITY CODE JUSTIFICATION: FEAT
CURRENT RATING PER CHARACTERISTIC: 30.00 MILLIAMPERES MAXIMUM COLLECTOR CURRENT, DC
FEATURES PROVIDED: HERMETICALLY SEALED CASE
III END ITEM IDENTIFICATION: AUSTIN SHIP CLASS LPD-4 AMPHIBIOUS TRANSPORT DOCKS, STURGEON CLASS SSN (637), TICONDEROGA CLASS CG (47), NIMITZ CLASS CVN, OLIVER PERRY CLASS FFG, SPRUANCE CLASS DD, KIDD CLASS DDG, FORRESTAL CLASS CV, VIRGINIA CLASS CGN (41)
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: JUNCTION CONTACT
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.265 INCHES NOMINAL
OVERALL LENGTH: 0.335 INCHES NOMINAL
POWER RATING PER CHARACTERISTIC: 125.0 MILLIWATTS MAXIMUM COLLECTOR POWER DISSIPATION
SEMICONDUCTOR MATERIAL: GERMANIUM
SPECIAL FEATURES: WEAPON SYSTEM ESSENTIAL; JUNCTION PATTERN ARRANGEMENT: PNP
SPECIFICATION/STANDARD DATA: 80131-RELEASE3959 PROFESSIONAL/INDUSTRIAL ASSOCIATION SPECIFICATION
TERMINAL CIRCLE DIAMETER: 0.100 INCHES NOMINAL
TERMINAL LENGTH: 1.500 INCHES MINIMUM
TERMINAL TY

MIS-12790

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961002517658

NSN

5961-00-251-7658

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MIS-12790

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961002517658

NSN

5961-00-251-7658

MFG

U S ARMY AVIATION AND MISSILE COMMAND

Description

CURRENT RATING PER CHARACTERISTIC: 3.00 AMPERES MAXIMUM AVERAGE ON-STATE CURRENT, 180 DEGREES CONDUCTION ANGLE, AVERAGE OVER A FULL 60-HZ CYCLE AND 80.00 AMPERES MAXIMUM FORWARD CURRENT, MAXIMUM PEAK TOTAL VALUE
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: GLASS
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 175.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.145 INCHES MAXIMUM
OVERALL LENGTH: 0.300 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL LENGTH: 0.975 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 100.0 MAXIMUM REVERSE VOLTAGE, PEAK

UT 3010

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961002517658

NSN

5961-00-251-7658

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UT 3010

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961002517658

NSN

5961-00-251-7658

MFG

MICRO USPD INC

Description

CURRENT RATING PER CHARACTERISTIC: 3.00 AMPERES MAXIMUM AVERAGE ON-STATE CURRENT, 180 DEGREES CONDUCTION ANGLE, AVERAGE OVER A FULL 60-HZ CYCLE AND 80.00 AMPERES MAXIMUM FORWARD CURRENT, MAXIMUM PEAK TOTAL VALUE
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: GLASS
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 175.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.145 INCHES MAXIMUM
OVERALL LENGTH: 0.300 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL LENGTH: 0.975 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 100.0 MAXIMUM REVERSE VOLTAGE, PEAK

MIS-13271

TRANSISTOR

NSN, MFG P/N

5961002517684

NSN

5961-00-251-7684

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MIS-13271

TRANSISTOR

NSN, MFG P/N

5961002517684

NSN

5961-00-251-7684

MFG

U S ARMY AVIATION AND MISSILE COMMAND

Description

CURRENT RATING PER CHARACTERISTIC: -600.00 MILLIAMPERES MAXIMUM COLLECTOR CURRENT, DC
ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE: COLLECTOR
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: JUNCTION CONTACT
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 200.0 DEG CELSIUS JUNCTION
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.335 INCHES MINIMUM AND 0.370 INCHES MAXIMUM
OVERALL LENGTH: 0.240 INCHES MINIMUM AND 0.260 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: PNP
TERMINAL CIRCLE DIAMETER: 0.200 INCHES NOMINAL
TERMINAL LENGTH: 1.500 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 3 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: -60.0 MAXIMUM COLLECTOR TO BASE VOLTAGE/STATIC/EMITTER OPEN AND -60.0 MAXIMUM COLLECTOR TO EMITTER VOLTAGE/STATIC/BASE OPEN AND -5.0 MAXIMUM EMITTER TO BASE VOLTAGE, STATIC, COLLECTOR OPEN

8880300004-1

TRANSISTOR

NSN, MFG P/N

5961002517925

NSN

5961-00-251-7925

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8880300004-1

TRANSISTOR

NSN, MFG P/N

5961002517925

NSN

5961-00-251-7925

MFG

NAVCOM DEFENSE ELECTRONICS INC.

Description

FEATURES PROVIDED: HERMETICALLY SEALED CASE
INTERNAL CONFIGURATION: UNIJUNCTION
OVERALL DIAMETER: 0.230 INCHES NOMINAL
OVERALL HEIGHT: 0.710 INCHES NOMINAL
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 3 PIN

8880100016-1

TRANSISTOR

NSN, MFG P/N

5961002517927

NSN

5961-00-251-7927

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8880100016-1

TRANSISTOR

NSN, MFG P/N

5961002517927

NSN

5961-00-251-7927

MFG

NAVCOM DEFENSE ELECTRONICS INC.

Description

DESIGN CONTROL REFERENCE: 8880100016-1
ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE: COLLECTOR
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INTERNAL CONFIGURATION: JUNCTION CONTACT
MANUFACTURERS CODE: 57057
OVERALL DIAMETER: 0.230 INCHES NOMINAL
OVERALL HEIGHT: 0.710 INCHES NOMINAL
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: PNP
TERMINAL TYPE AND QUANTITY: 4 UNINSULATED WIRE LEAD
THE MANUFACTURERS DATA:

322MT080P002

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961002519112

NSN

5961-00-251-9112

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322MT080P002

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961002519112

NSN

5961-00-251-9112

MFG

RAYTHEON TECHNICAL SERVICES COMPANY LLC DBA RAYTHEON

Description

CURRENT RATING PER CHARACTERISTIC: 20.00 AMPERES MAXIMUM FORWARD CURRENT, AVERAGE
DESIGN CONTROL REFERENCE: 322MT080P002
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: DO-5
MANUFACTURERS CODE: 3B150
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 175.0 DEG CELSIUS JUNCTION
MOUNTING FACILITY QUANTITY: 1
MOUNTING METHOD: THREADED STUD
NOMINAL THREAD SIZE: 0.250 INCHES
OVERALL WIDTH ACROSS FLATS: 0.688 INCHES NOMINAL
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 1 THREADED STUD AND 1 TAB, SOLDER LUG
THE MANUFACTURERS DATA:
THREAD SERIES DESIGNATOR: UNF
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 200.0 MAXIMUM REVERSE VOLTAGE, PEAK

322MR156P001

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961002519123

NSN

5961-00-251-9123

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322MR156P001

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961002519123

NSN

5961-00-251-9123

MFG

RAYTHEON SERVICE CO LOGISTICS SUPPORT CENTER

Description

DESIGN CONTROL REFERENCE: 322MR156P001
FEATURES PROVIDED: HERMETICALLY SEALED CASE
MANUFACTURERS CODE: 2B487
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
THE MANUFACTURERS DATA:

1N5408

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961002520995

NSN

5961-00-252-0995

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1N5408

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961002520995

NSN

5961-00-252-0995

MFG

GENERAL SEMICONDUCTOR INC

Description

CRITICALITY CODE JUSTIFICATION: FEAT
CURRENT RATING PER CHARACTERISTIC: 3.00 AMPERES MAXIMUM AVERAGE FORWARD CURRENT AVERAGED OVER A FULL 60-HZ CYCLE
FEATURES PROVIDED: HERMETICALLY SEALED CASE
III END ITEM IDENTIFICATION: B-52 STRATOFORTRESS, T-39 AIRCRAFT. SHIPBOARD HANDLING MATERIAL EQUIPMENT (MHE). 485L TACS. 463L CARGO SYSTEM. CONSOLIDATED SPACE OPERATIONS CENTER. LANDING CRAFT AIR CUSHION (LCAC). TF33-PW-102 AIRCRAFT ENGINE. CONSOLIDATED AUTOMATED SUPPORT SYSTEM
INCLOSURE MATERIAL: GLASS
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 170.0 DEG CELSIUS CASE
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.200 INCHES MAXIMUM
OVERALL LENGTH: 0.375 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: WEAPON SYSTEM ESSENTIAL
SPECIFICATION/STANDARD DATA: 80131-RELEASE5729 PROFESSIONAL/INDUSTRIAL ASSOCIATION SPECIFICATION
TERMINAL LENGTH: 1.250 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 1000.0

1N5408A

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961002520995

NSN

5961-00-252-0995

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1N5408A

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961002520995

NSN

5961-00-252-0995

MFG

ADELCO ELEKTRONIK GMBH

Description

CRITICALITY CODE JUSTIFICATION: FEAT
CURRENT RATING PER CHARACTERISTIC: 3.00 AMPERES MAXIMUM AVERAGE FORWARD CURRENT AVERAGED OVER A FULL 60-HZ CYCLE
FEATURES PROVIDED: HERMETICALLY SEALED CASE
III END ITEM IDENTIFICATION: B-52 STRATOFORTRESS, T-39 AIRCRAFT. SHIPBOARD HANDLING MATERIAL EQUIPMENT (MHE). 485L TACS. 463L CARGO SYSTEM. CONSOLIDATED SPACE OPERATIONS CENTER. LANDING CRAFT AIR CUSHION (LCAC). TF33-PW-102 AIRCRAFT ENGINE. CONSOLIDATED AUTOMATED SUPPORT SYSTEM
INCLOSURE MATERIAL: GLASS
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 170.0 DEG CELSIUS CASE
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.200 INCHES MAXIMUM
OVERALL LENGTH: 0.375 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: WEAPON SYSTEM ESSENTIAL
SPECIFICATION/STANDARD DATA: 80131-RELEASE5729 PROFESSIONAL/INDUSTRIAL ASSOCIATION SPECIFICATION
TERMINAL LENGTH: 1.250 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 1000.0