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5961-01-322-2489
20 Products
08672-60129
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961013222489
NSN
5961-01-322-2489
08672-60129
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961013222489
NSN
5961-01-322-2489
MFG
AVAGO TECHNOLOGIES U.S. INC. DIV AVAGO TECHNOLOGIES
Description
SEMICONDUCTOR DEVICE,DIODE
Related Searches:
DZ921016A
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961013220940
NSN
5961-01-322-0940
MFG
MICROSEMI CORP.-SCOTTSDALE DBA MICROSEMI
Description
SEMICONDUCTOR DEVICE,DIODE
Related Searches:
9029-254AT
SEMICONDUCTOR DEVICE,THYRISTOR
NSN, MFG P/N
5961013220942
NSN
5961-01-322-0942
9029-254AT
SEMICONDUCTOR DEVICE,THYRISTOR
NSN, MFG P/N
5961013220942
NSN
5961-01-322-0942
MFG
POWEREX INC
Description
SEMICONDUCTOR MATERIAL: SILICON
Related Searches:
7881C65G05
SEMICONDUCTOR DEVICE,THYRISTOR
NSN, MFG P/N
5961013220943
NSN
5961-01-322-0943
7881C65G05
SEMICONDUCTOR DEVICE,THYRISTOR
NSN, MFG P/N
5961013220943
NSN
5961-01-322-0943
MFG
EATON CORPORATION
Description
FEATURES PROVIDED: W/HEAT SINK
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: 560.0 AMP
Related Searches:
7881C65G01
SEMICONDUCTOR DEVICE,THYRISTOR
NSN, MFG P/N
5961013220944
NSN
5961-01-322-0944
7881C65G01
SEMICONDUCTOR DEVICE,THYRISTOR
NSN, MFG P/N
5961013220944
NSN
5961-01-322-0944
MFG
EATON CORPORATION
Description
FEATURES PROVIDED: W/HEAT SINK
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: 180.0 AMP
Related Searches:
1092A803-48
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961013221713
NSN
5961-01-322-1713
1092A803-48
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961013221713
NSN
5961-01-322-1713
MFG
PEERLESS INSTRUMENT CO. INC.
Description
CRITICALITY CODE JUSTIFICATION: ZZZY
DESIGN CONTROL REFERENCE: 1092A803-48
INCLOSURE MATERIAL: METAL
MANUFACTURERS CODE: 95210
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.209 INCHES MINIMUM AND 0.230 INCHES MAXIMUM
OVERALL LENGTH: 0.070 INCHES NOMINAL
REFERENCE NUMBER DIFFERENTIATING CHARACTERISTICS: REFERENCE NUMBER DIFFERENTIATING MATERIAL WILL BE IN ACCORDANCE WITH NAVAL INVENTORY CONTROL POINT ACTIVITY HX QUALITY CONTROL. MANUFACTURING AND TESTING SPECIFICATIONS AVAILABLE AT THE DLA ICP.
SPECIAL FEATURES: ITEM MUST COMPLY WITH REQUIREMENTS OF DEFENSE SUPPLY CENTER COLUMBUS PRODUCTION STANDARD NO. LO4260
TERMINAL LENGTH: 1.000 INCHES NOMINAL
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
THE MANUFACTURERS DATA:
Related Searches:
AD589UH/883B
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961013221713
NSN
5961-01-322-1713
AD589UH/883B
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961013221713
NSN
5961-01-322-1713
MFG
ANALOG DEVICES INC MICROELECTRONICS DIV
Description
CRITICALITY CODE JUSTIFICATION: ZZZY
DESIGN CONTROL REFERENCE: 1092A803-48
INCLOSURE MATERIAL: METAL
MANUFACTURERS CODE: 95210
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.209 INCHES MINIMUM AND 0.230 INCHES MAXIMUM
OVERALL LENGTH: 0.070 INCHES NOMINAL
REFERENCE NUMBER DIFFERENTIATING CHARACTERISTICS: REFERENCE NUMBER DIFFERENTIATING MATERIAL WILL BE IN ACCORDANCE WITH NAVAL INVENTORY CONTROL POINT ACTIVITY HX QUALITY CONTROL. MANUFACTURING AND TESTING SPECIFICATIONS AVAILABLE AT THE DLA ICP.
SPECIAL FEATURES: ITEM MUST COMPLY WITH REQUIREMENTS OF DEFENSE SUPPLY CENTER COLUMBUS PRODUCTION STANDARD NO. LO4260
TERMINAL LENGTH: 1.000 INCHES NOMINAL
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
THE MANUFACTURERS DATA:
Related Searches:
LM185-1.2/883B
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961013221713
NSN
5961-01-322-1713
LM185-1.2/883B
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961013221713
NSN
5961-01-322-1713
MFG
NATIONAL SEMICONDUCTOR CORPORATION
Description
CRITICALITY CODE JUSTIFICATION: ZZZY
DESIGN CONTROL REFERENCE: 1092A803-48
INCLOSURE MATERIAL: METAL
MANUFACTURERS CODE: 95210
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.209 INCHES MINIMUM AND 0.230 INCHES MAXIMUM
OVERALL LENGTH: 0.070 INCHES NOMINAL
REFERENCE NUMBER DIFFERENTIATING CHARACTERISTICS: REFERENCE NUMBER DIFFERENTIATING MATERIAL WILL BE IN ACCORDANCE WITH NAVAL INVENTORY CONTROL POINT ACTIVITY HX QUALITY CONTROL. MANUFACTURING AND TESTING SPECIFICATIONS AVAILABLE AT THE DLA ICP.
SPECIAL FEATURES: ITEM MUST COMPLY WITH REQUIREMENTS OF DEFENSE SUPPLY CENTER COLUMBUS PRODUCTION STANDARD NO. LO4260
TERMINAL LENGTH: 1.000 INCHES NOMINAL
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
THE MANUFACTURERS DATA:
Related Searches:
LO4260
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961013221713
NSN
5961-01-322-1713
MFG
DLA LAND AND MARITIME
Description
CRITICALITY CODE JUSTIFICATION: ZZZY
DESIGN CONTROL REFERENCE: 1092A803-48
INCLOSURE MATERIAL: METAL
MANUFACTURERS CODE: 95210
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.209 INCHES MINIMUM AND 0.230 INCHES MAXIMUM
OVERALL LENGTH: 0.070 INCHES NOMINAL
REFERENCE NUMBER DIFFERENTIATING CHARACTERISTICS: REFERENCE NUMBER DIFFERENTIATING MATERIAL WILL BE IN ACCORDANCE WITH NAVAL INVENTORY CONTROL POINT ACTIVITY HX QUALITY CONTROL. MANUFACTURING AND TESTING SPECIFICATIONS AVAILABLE AT THE DLA ICP.
SPECIAL FEATURES: ITEM MUST COMPLY WITH REQUIREMENTS OF DEFENSE SUPPLY CENTER COLUMBUS PRODUCTION STANDARD NO. LO4260
TERMINAL LENGTH: 1.000 INCHES NOMINAL
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
THE MANUFACTURERS DATA:
Related Searches:
FS25F
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961013221714
NSN
5961-01-322-1714
MFG
SEMTECH CORPUS CHRISTI.A. DE C.V. REYNOSA FACILITY
Description
CURRENT RATING PER CHARACTERISTIC: 0.50 AMPERES NOMINAL FORWARD CURRENT, AVERAGE AND 2.50 AMPERES NOMINAL REPETITIVE PEAK FORWARD CURRENT
FEATURES PROVIDED: HERMETICALLY SEALED CASE
OVERALL DIAMETER: 0.065 INCHES MINIMUM AND 0.110 INCHES MAXIMUM
OVERALL LENGTH: 0.190 INCHES MINIMUM AND 0.215 INCHES MAXIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 2500.0 NOMINAL WORKING PEAK REVERSE VOLTAGE AND 2500.0 NOMINAL REPETITIVE PEAK REVERSE VOLTAGE AND 5.0 NOMINAL FORWARD VOLTAGE, DC
Related Searches:
1957-16
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961013221717
NSN
5961-01-322-1717
MFG
DLA LAND AND MARITIME
Description
SEMICONDUCTOR DEVICE,DIODE
Related Searches:
BZX85C11
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961013221717
NSN
5961-01-322-1717
MFG
VISHAY
Description
SEMICONDUCTOR DEVICE,DIODE
Related Searches:
717801309-003
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961013221718
NSN
5961-01-322-1718
717801309-003
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961013221718
NSN
5961-01-322-1718
MFG
LOCKHEED MARTIN CORPORATION DBA LOCKHEED MARTIN
Description
CRITICALITY CODE JUSTIFICATION: FEAT
CURRENT RATING PER CHARACTERISTIC: 300.00 AMPERES MAXIMUM PEAK FORWARD SURGE CURRENT
FEATURES PROVIDED: BURN IN AND HERMETICALLY SEALED CASE
FUNCTION FOR WHICH DESIGNED: RECTIFIER
III END ITEM IDENTIFICATION: LOW ALTITUTE NAVIGATION & TARGETING INFRARED SYSTEM (LANTIRN)
INCLOSURE MATERIAL: METAL
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 125.0 DEG CELSIUS AMBIENT AIR
MOUNTING FACILITY QUANTITY: 1
MOUNTING METHOD: THREADED STUD
NOMINAL THREAD SIZE: 0.190 INCHES
OVERALL LENGTH: 1.000 INCHES MAXIMUM
OVERALL WIDTH ACROSS FLATS: 0.437 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: WEAPON SYSTEM ESSENTIAL; JUNCTION PATTERN ARRANGEMENT: PN
TERMINAL TYPE AND QUANTITY: 2 PIN
TEST DATA DOCUMENT: 04939-717801309 DRAWING
THREAD SERIES DESIGNATOR: UNF
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 500.0 MAXIMUM REVERSE VOLTAGE, PEAK
Related Searches:
MX0004-003E
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961013221718
NSN
5961-01-322-1718
MX0004-003E
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961013221718
NSN
5961-01-322-1718
MFG
MICROSEMI CORPORATION
Description
CRITICALITY CODE JUSTIFICATION: FEAT
CURRENT RATING PER CHARACTERISTIC: 300.00 AMPERES MAXIMUM PEAK FORWARD SURGE CURRENT
FEATURES PROVIDED: BURN IN AND HERMETICALLY SEALED CASE
FUNCTION FOR WHICH DESIGNED: RECTIFIER
III END ITEM IDENTIFICATION: LOW ALTITUTE NAVIGATION & TARGETING INFRARED SYSTEM (LANTIRN)
INCLOSURE MATERIAL: METAL
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 125.0 DEG CELSIUS AMBIENT AIR
MOUNTING FACILITY QUANTITY: 1
MOUNTING METHOD: THREADED STUD
NOMINAL THREAD SIZE: 0.190 INCHES
OVERALL LENGTH: 1.000 INCHES MAXIMUM
OVERALL WIDTH ACROSS FLATS: 0.437 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: WEAPON SYSTEM ESSENTIAL; JUNCTION PATTERN ARRANGEMENT: PN
TERMINAL TYPE AND QUANTITY: 2 PIN
TEST DATA DOCUMENT: 04939-717801309 DRAWING
THREAD SERIES DESIGNATOR: UNF
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 500.0 MAXIMUM REVERSE VOLTAGE, PEAK
Related Searches:
SDR625/59TX-MOD
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961013221718
NSN
5961-01-322-1718
SDR625/59TX-MOD
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961013221718
NSN
5961-01-322-1718
MFG
SOLID STATE DEVICES INC.
Description
CRITICALITY CODE JUSTIFICATION: FEAT
CURRENT RATING PER CHARACTERISTIC: 300.00 AMPERES MAXIMUM PEAK FORWARD SURGE CURRENT
FEATURES PROVIDED: BURN IN AND HERMETICALLY SEALED CASE
FUNCTION FOR WHICH DESIGNED: RECTIFIER
III END ITEM IDENTIFICATION: LOW ALTITUTE NAVIGATION & TARGETING INFRARED SYSTEM (LANTIRN)
INCLOSURE MATERIAL: METAL
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 125.0 DEG CELSIUS AMBIENT AIR
MOUNTING FACILITY QUANTITY: 1
MOUNTING METHOD: THREADED STUD
NOMINAL THREAD SIZE: 0.190 INCHES
OVERALL LENGTH: 1.000 INCHES MAXIMUM
OVERALL WIDTH ACROSS FLATS: 0.437 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: WEAPON SYSTEM ESSENTIAL; JUNCTION PATTERN ARRANGEMENT: PN
TERMINAL TYPE AND QUANTITY: 2 PIN
TEST DATA DOCUMENT: 04939-717801309 DRAWING
THREAD SERIES DESIGNATOR: UNF
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 500.0 MAXIMUM REVERSE VOLTAGE, PEAK
Related Searches:
300013-1
SEMICONDUCTOR DEVICES,UNITIZED
NSN, MFG P/N
5961013222535
NSN
5961-01-322-2535
300013-1
SEMICONDUCTOR DEVICES,UNITIZED
NSN, MFG P/N
5961013222535
NSN
5961-01-322-2535
MFG
UNIDYNAMICS/SAINT LOUIS INC CONROE OPNS
Description
SEMICONDUCTOR DEVICES,UNITIZED
Related Searches:
1909-15
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961013222673
NSN
5961-01-322-2673
MFG
DLA LAND AND MARITIME
Description
SEMICONDUCTOR DEVICE,DIODE
Related Searches:
BZX79C10V0
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961013222673
NSN
5961-01-322-2673
BZX79C10V0
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961013222673
NSN
5961-01-322-2673
MFG
VISHAY
Description
SEMICONDUCTOR DEVICE,DIODE
Related Searches:
ZP-D 10
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961013222673
NSN
5961-01-322-2673
MFG
ITT SEMICONDUCTORS A DIVISION OF INTERNATIONAL TELEPHONE AND TELEGRAPH CORP
Description
SEMICONDUCTOR DEVICE,DIODE
Related Searches:
11637-53
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961013222674
NSN
5961-01-322-2674
MFG
AVO INTL
Description
SEMICONDUCTOR DEVICE,DIODE
