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5961-00-003-4647
20 Products
3510049-014
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961000034647
NSN
5961-00-003-4647
3510049-014
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961000034647
NSN
5961-00-003-4647
MFG
COHU INC. DBA COHU ELECTRONICS DIVISION
Description
CURRENT RATING PER CHARACTERISTIC: 28.00 MILLIAMPERES MAXIMUM MAXIMUM REVERSE SURGE CURRENT
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.090 INCHES NOMINAL
OVERALL LENGTH: 0.175 INCHES NOMINAL
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL LENGTH: 1.000 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 9.1 MAXIMUM NOMINAL REGULATOR VOLTAGE
Related Searches:
655-083-1
RECTIFIER,SEMICONDUCTOR DEVICE,UNITIZED
NSN, MFG P/N
5961000032956
NSN
5961-00-003-2956
655-083-1
RECTIFIER,SEMICONDUCTOR DEVICE,UNITIZED
NSN, MFG P/N
5961000032956
NSN
5961-00-003-2956
MFG
MICRO USPD INC
Description
ABSOLUTE MAXIMUM CURRENT RATING PER CHARACTERISTIC: 150.00 AMPERES FORWARD CURRENT, NONREPETITIVE, MAXIMUM PEAK TOTAL VALUE
ABSOLUTE MAXIMUM VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 100.0 PEAK INVERSE VOLTAGE
CIRCUIT CONNECTION STYLE DESIGNATOR: A10 INVERTED CENTER TAP 1 PHASE
MANUFACTURERS CODE: 90536
MATERIAL: SILICON
MFR SOURCE CONTROLLING REFERENCE: 7903528-06
MOUNTING METHOD: UNTHREADED HOLE
OPERATING TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
OVERALL HEIGHT: 0.660 INCHES MAXIMUM
OVERALL LENGTH: 2.240 INCHES MINIMUM AND 2.260 INCHES MAXIMUM
OVERALL WIDTH: 0.334 INCHES MINIMUM AND 0.354 INCHES MAXIMUM
SPEC/STD CONTROLLING DATA:
TERMINAL TYPE AND QUANTITY: 3 WIRE HOOK
Related Searches:
7903528-06
RECTIFIER,SEMICONDUCTOR DEVICE,UNITIZED
NSN, MFG P/N
5961000032956
NSN
5961-00-003-2956
7903528-06
RECTIFIER,SEMICONDUCTOR DEVICE,UNITIZED
NSN, MFG P/N
5961000032956
NSN
5961-00-003-2956
MFG
LOCKHEED MARTIN CORPORATION DBA LOCKHEED MARTIN DIV MS2
Description
ABSOLUTE MAXIMUM CURRENT RATING PER CHARACTERISTIC: 150.00 AMPERES FORWARD CURRENT, NONREPETITIVE, MAXIMUM PEAK TOTAL VALUE
ABSOLUTE MAXIMUM VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 100.0 PEAK INVERSE VOLTAGE
CIRCUIT CONNECTION STYLE DESIGNATOR: A10 INVERTED CENTER TAP 1 PHASE
MANUFACTURERS CODE: 90536
MATERIAL: SILICON
MFR SOURCE CONTROLLING REFERENCE: 7903528-06
MOUNTING METHOD: UNTHREADED HOLE
OPERATING TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
OVERALL HEIGHT: 0.660 INCHES MAXIMUM
OVERALL LENGTH: 2.240 INCHES MINIMUM AND 2.260 INCHES MAXIMUM
OVERALL WIDTH: 0.334 INCHES MINIMUM AND 0.354 INCHES MAXIMUM
SPEC/STD CONTROLLING DATA:
TERMINAL TYPE AND QUANTITY: 3 WIRE HOOK
Related Searches:
371-045
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961000034646
NSN
5961-00-003-4646
MFG
JOHNSON E F CO COMCO/COMMUNICATIONS CO DIV
Description
CURRENT RATING PER CHARACTERISTIC: 19.00 MILLIAMPERES MAXIMUM PEAK POINT CURRENT
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.090 INCHES NOMINAL
OVERALL LENGTH: 0.175 INCHES NOMINAL
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL LENGTH: 1.000 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 13.0 MAXIMUM NOMINAL REGULATOR VOLTAGE
Related Searches:
SZ13
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961000034646
NSN
5961-00-003-4646
MFG
JAPLAR GROUP INC. DBA JAPLAR SCHAUER
Description
CURRENT RATING PER CHARACTERISTIC: 19.00 MILLIAMPERES MAXIMUM PEAK POINT CURRENT
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.090 INCHES NOMINAL
OVERALL LENGTH: 0.175 INCHES NOMINAL
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL LENGTH: 1.000 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 13.0 MAXIMUM NOMINAL REGULATOR VOLTAGE
Related Searches:
371-040
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961000034647
NSN
5961-00-003-4647
MFG
JOHNSON E F CO COMCO/COMMUNICATIONS CO DIV
Description
CURRENT RATING PER CHARACTERISTIC: 28.00 MILLIAMPERES MAXIMUM MAXIMUM REVERSE SURGE CURRENT
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.090 INCHES NOMINAL
OVERALL LENGTH: 0.175 INCHES NOMINAL
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL LENGTH: 1.000 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 9.1 MAXIMUM NOMINAL REGULATOR VOLTAGE
Related Searches:
SZ9.1A
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961000034647
NSN
5961-00-003-4647
MFG
JAPLAR GROUP INC. DBA JAPLAR SCHAUER
Description
CURRENT RATING PER CHARACTERISTIC: 28.00 MILLIAMPERES MAXIMUM MAXIMUM REVERSE SURGE CURRENT
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.090 INCHES NOMINAL
OVERALL LENGTH: 0.175 INCHES NOMINAL
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL LENGTH: 1.000 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 9.1 MAXIMUM NOMINAL REGULATOR VOLTAGE
Related Searches:
2N4079
SEMICONDUCTOR DEVICE SET
NSN, MFG P/N
5961000034663
NSN
5961-00-003-4663
MFG
ELECTRONIC INDUSTRIES ASSOCIATION
Description
COMPONENT FUNCTION RELATIONSHIP: MATCHED
COMPONENT NAME AND QUANTITY: 2 TRANSISTOR
INTERNAL CONFIGURATION: JUNCTION CONTACT ALL TRANSISTOR
INTERNAL JUNCTION CONFIGURATION: NPN 1ST TRANSISTOR PNP 2ND TRANSISTOR
SEMICONDUCTOR MATERIAL: GERMANIUM ALL TRANSISTOR
Related Searches:
720PT3161C
TRANSISTOR
NSN, MFG P/N
5961000034670
NSN
5961-00-003-4670
MFG
JOHNSON E F CO COMCO/COMMUNICATIONS CO DIV
Description
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INTERNAL CONFIGURATION: JUNCTION CONTACT
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: NPN
Related Searches:
DMS 80069B
TRANSISTOR
NSN, MFG P/N
5961000034670
NSN
5961-00-003-4670
MFG
DLA LAND AND MARITIME
Description
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INTERNAL CONFIGURATION: JUNCTION CONTACT
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: NPN
Related Searches:
PT3161C
TRANSISTOR
NSN, MFG P/N
5961000034670
NSN
5961-00-003-4670
MFG
TRW ELECTRONICS AND DEFENSE SECTOR RF DEVICES
Description
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INTERNAL CONFIGURATION: JUNCTION CONTACT
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: NPN
Related Searches:
720PT3161D
TRANSISTOR
NSN, MFG P/N
5961000034671
NSN
5961-00-003-4671
MFG
JOHNSON E F CO COMCO/COMMUNICATIONS CO DIV
Description
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INTERNAL CONFIGURATION: JUNCTION CONTACT
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: NPN
TERMINAL TYPE AND QUANTITY: 4 UNINSULATED WIRE LEAD
Related Searches:
PT3161D
TRANSISTOR
NSN, MFG P/N
5961000034671
NSN
5961-00-003-4671
MFG
TRW ELECTRONICS AND DEFENSE SECTOR RF DEVICES
Description
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INTERNAL CONFIGURATION: JUNCTION CONTACT
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: NPN
TERMINAL TYPE AND QUANTITY: 4 UNINSULATED WIRE LEAD
Related Searches:
DMS 80069B
TRANSISTOR
NSN, MFG P/N
5961000034672
NSN
5961-00-003-4672
MFG
DLA LAND AND MARITIME
Description
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INTERNAL CONFIGURATION: JUNCTION CONTACT
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.450 INCHES MINIMUM AND 0.500 INCHES MAXIMUM
OVERALL LENGTH: 0.280 INCHES MINIMUM AND 0.285 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: NPN
TERMINAL TYPE AND QUANTITY: 4 UNINSULATED WIRE LEAD
Related Searches:
PT3161E
TRANSISTOR
NSN, MFG P/N
5961000034672
NSN
5961-00-003-4672
MFG
TRW ELECTRONICS AND DEFENSE SECTOR RF DEVICES
Description
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INTERNAL CONFIGURATION: JUNCTION CONTACT
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.450 INCHES MINIMUM AND 0.500 INCHES MAXIMUM
OVERALL LENGTH: 0.280 INCHES MINIMUM AND 0.285 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: NPN
TERMINAL TYPE AND QUANTITY: 4 UNINSULATED WIRE LEAD
Related Searches:
6096629
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961000034673
NSN
5961-00-003-4673
MFG
LOCKHEED MARTIN CORPORATION DBA MISSION SYSTEMS & SENSORS
Description
CURRENT RATING PER CHARACTERISTIC: 12.00 AMPERES MAXIMUM FORWARD CURRENT, DC AND 5.00 MILLIAMPERES MAXIMUM REVERSE CURRENT, DC
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: GLASS AND METAL
MOUNTING FACILITY QUANTITY: 1
MOUNTING METHOD: THREADED STUD
NOMINAL THREAD SIZE: 0.190 INCHES
OVERALL LENGTH: 0.400 INCHES MAXIMUM
OVERALL WIDTH ACROSS FLATS: 0.432 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 1 TAB, SOLDER LUG AND 1 THREADED STUD
THREAD SERIES DESIGNATOR: UNF
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 1.0 MAXIMUM FORWARD VOLTAGE, AVERAGE AND 175.0 MAXIMUM REVERSE VOLTAGE, INSTANTANEOUS
Related Searches:
PRD2729
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961000034673
NSN
5961-00-003-4673
MFG
OPTEK TECHNOLOGY INC
Description
CURRENT RATING PER CHARACTERISTIC: 12.00 AMPERES MAXIMUM FORWARD CURRENT, DC AND 5.00 MILLIAMPERES MAXIMUM REVERSE CURRENT, DC
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: GLASS AND METAL
MOUNTING FACILITY QUANTITY: 1
MOUNTING METHOD: THREADED STUD
NOMINAL THREAD SIZE: 0.190 INCHES
OVERALL LENGTH: 0.400 INCHES MAXIMUM
OVERALL WIDTH ACROSS FLATS: 0.432 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 1 TAB, SOLDER LUG AND 1 THREADED STUD
THREAD SERIES DESIGNATOR: UNF
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 1.0 MAXIMUM FORWARD VOLTAGE, AVERAGE AND 175.0 MAXIMUM REVERSE VOLTAGE, INSTANTANEOUS
Related Searches:
68A7373P1
TRANSISTOR
NSN, MFG P/N
5961000034704
NSN
5961-00-003-4704
MFG
GENERAL ELECTRIC CO OUTDOOR BREAKER BUSINESS SECTION
Description
CURRENT RATING PER CHARACTERISTIC: 200.00 MILLIAMPERES MAXIMUM COLLECTOR CURRENT, DC
DESIGN CONTROL REFERENCE: 68A7373P1
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: JUNCTION CONTACT
MANUFACTURERS CODE: 03497
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 100.0 DEG CELSIUS JUNCTION
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.205 INCHES MAXIMUM
OVERALL LENGTH: 0.260 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 200.0 MILLIWATTS MAXIMUM COLLECTOR POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: NPN
TERMINAL CIRCLE DIAMETER: 0.100 INCHES NOMINAL
TERMINAL LENGTH: 0.500 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 3 UNINSULATED WIRE LEAD
THE MANUFACTURERS DATA:
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 18.0 MAXIMUM COLLECTOR TO BASE VOLTAGE/STATIC/EMITTER OPEN AND 18.0 MAXIMUM COLLECTOR TO EMITTER VOLTAGE/STATIC/BASE OPEN AND 5.0 MAXIMUM EMITTER TO BASE VOLTAGE, S
Related Searches:
0N149987
SEMICONDUCTOR DEVICE,THYRISTOR
NSN, MFG P/N
5961000034779
NSN
5961-00-003-4779
0N149987
SEMICONDUCTOR DEVICE,THYRISTOR
NSN, MFG P/N
5961000034779
NSN
5961-00-003-4779
MFG
NATIONAL SECURITY AGENCY
Description
CURRENT RATING PER CHARACTERISTIC: 60.00 AMPERES MAXIMUM AVERAGE FORWARD CURRENT AVERAGED OVER A FULL 60-HZ CYCLE
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 150.0 DEG CELSIUS CASE
MOUNTING FACILITY QUANTITY: 1
MOUNTING METHOD: THREADED STUD
NOMINAL THREAD SIZE: 0.190 INCHES
OVERALL LENGTH: 1.204 INCHES NOMINAL
OVERALL WIDTH ACROSS FLATS: 0.424 INCHES MINIMUM AND 0.437 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 500.0 MILLIWATTS MAXIMUM PEAK GATE POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 2 TAB, SOLDER LUG AND 1 THREADED STUD
TEST DATA DOCUMENT: 98230-0N149987 DRAWING
THREAD SERIES DESIGNATOR: UNF
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 50.0 MAXIMUM BREAKOVER VOLTAGE, DC
Related Searches:
C10FR581G
SEMICONDUCTOR DEVICE,THYRISTOR
NSN, MFG P/N
5961000034779
NSN
5961-00-003-4779
C10FR581G
SEMICONDUCTOR DEVICE,THYRISTOR
NSN, MFG P/N
5961000034779
NSN
5961-00-003-4779
MFG
GENERAL ELECTRIC CO SEMI-CONDUCTOR PRODUCTS DEPT POWER COMPONENTS OPN
Description
CURRENT RATING PER CHARACTERISTIC: 60.00 AMPERES MAXIMUM AVERAGE FORWARD CURRENT AVERAGED OVER A FULL 60-HZ CYCLE
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 150.0 DEG CELSIUS CASE
MOUNTING FACILITY QUANTITY: 1
MOUNTING METHOD: THREADED STUD
NOMINAL THREAD SIZE: 0.190 INCHES
OVERALL LENGTH: 1.204 INCHES NOMINAL
OVERALL WIDTH ACROSS FLATS: 0.424 INCHES MINIMUM AND 0.437 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 500.0 MILLIWATTS MAXIMUM PEAK GATE POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 2 TAB, SOLDER LUG AND 1 THREADED STUD
TEST DATA DOCUMENT: 98230-0N149987 DRAWING
THREAD SERIES DESIGNATOR: UNF
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 50.0 MAXIMUM BREAKOVER VOLTAGE, DC
