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5961-01-165-9802
20 Products
12922164
HOLDER,SEMICONDUCTOR DEVICE
NSN, MFG P/N
5961011659802
NSN
5961-01-165-9802
MFG
U S ARMY ARMAMENT RESEARCH & DEVELOPMENT COMMAND
Description
ACCOMMODATED EQUIPMENT IDENTIFYING NUMBER: 438296 DRAWING NO.
OUTPUT TERMINAL TYPE: ANY ACCEPTABLE
OVERALL DIAMETER: 0.296 INCHES MAXIMUM
OVERALL LENGTH: 0.256 INCHES MAXIMUM
Related Searches:
SPS8042
TRANSISTOR
NSN, MFG P/N
5961011659796
NSN
5961-01-165-9796
MFG
FREESCALE SEMICONDUCTOR INC.
Description
CURRENT RATING PER CHARACTERISTIC: 200.00 MILLIAMPERES MAXIMUM COLLECTOR CURRENT, DC
INTERNAL CONFIGURATION: JUNCTION CONTACT
POWER RATING PER CHARACTERISTIC: 625.0 MILLIWATTS MAXIMUM TOTAL DEVICE DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: NPN
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 0.2 MAXIMUM COLLECTOR TO EMITTER SATURATION VOLTAGE
Related Searches:
1902-0948
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961011659801
NSN
5961-01-165-9801
MFG
AVAGO TECHNOLOGIES U.S. INC. DIV AVAGO TECHNOLOGIES
Description
CURRENT RATING PER CHARACTERISTIC: 20.00 MILLIAMPERES MAXIMUM VOLTAGE REGULATOR DIODE CURRENT
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: GLASS
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: DO-35
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.090 INCHES MAXIMUM
OVERALL LENGTH: 0.200 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 0.4 WATTS MAXIMUM TOTAL DEVICE DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL LENGTH: 0.500 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 3.9 MAXIMUM NOMINAL REGULATOR VOLTAGE
VOLTAGE TOLERANCE IN PERCENT: -5.0 TO 5.0
Related Searches:
SZ30035-6
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961011659801
NSN
5961-01-165-9801
MFG
FREESCALE SEMICONDUCTOR INC.
Description
CURRENT RATING PER CHARACTERISTIC: 20.00 MILLIAMPERES MAXIMUM VOLTAGE REGULATOR DIODE CURRENT
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: GLASS
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: DO-35
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.090 INCHES MAXIMUM
OVERALL LENGTH: 0.200 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 0.4 WATTS MAXIMUM TOTAL DEVICE DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL LENGTH: 0.500 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 3.9 MAXIMUM NOMINAL REGULATOR VOLTAGE
VOLTAGE TOLERANCE IN PERCENT: -5.0 TO 5.0
Related Searches:
438296-01
HOLDER,SEMICONDUCTOR DEVICE
NSN, MFG P/N
5961011659802
NSN
5961-01-165-9802
438296-01
HOLDER,SEMICONDUCTOR DEVICE
NSN, MFG P/N
5961011659802
NSN
5961-01-165-9802
MFG
BAE SYSTEMS CONTROLS INC
Description
ACCOMMODATED EQUIPMENT IDENTIFYING NUMBER: 438296 DRAWING NO.
OUTPUT TERMINAL TYPE: ANY ACCEPTABLE
OVERALL DIAMETER: 0.296 INCHES MAXIMUM
OVERALL LENGTH: 0.256 INCHES MAXIMUM
Related Searches:
P-960
HOLDER,SEMICONDUCTOR DEVICE
NSN, MFG P/N
5961011659802
NSN
5961-01-165-9802
MFG
FORD AEROSPACE CORP ELECTRONICS DIV
Description
ACCOMMODATED EQUIPMENT IDENTIFYING NUMBER: 438296 DRAWING NO.
OUTPUT TERMINAL TYPE: ANY ACCEPTABLE
OVERALL DIAMETER: 0.296 INCHES MAXIMUM
OVERALL LENGTH: 0.256 INCHES MAXIMUM
Related Searches:
112-050-002
SEMICONDUCTOR DEVICE ASSEMBLY
NSN, MFG P/N
5961011659827
NSN
5961-01-165-9827
112-050-002
SEMICONDUCTOR DEVICE ASSEMBLY
NSN, MFG P/N
5961011659827
NSN
5961-01-165-9827
MFG
AYDIN CORP AYDIN CONTROLS DIV
Description
MAJOR COMPONENTS: SEMICONDUCTOR DEVICE DIODE 2; THREAD TERMINALS 3,DISCHARGE BLOCK 1
MOUNTING CONFIGURATION: 2 0.156 IN. DIA MTG HOLES ON 2.312 IN. LG CENTER
OVERALL HEIGHT: 1.000 INCHES NOMINAL
OVERALL LENGTH: 2.938 INCHES NOMINAL
OVERALL WIDTH: 1.000 INCHES NOMINAL
Related Searches:
8950R647
SEMICONDUCTOR DEVICE ASSEMBLY
NSN, MFG P/N
5961011659827
NSN
5961-01-165-9827
8950R647
SEMICONDUCTOR DEVICE ASSEMBLY
NSN, MFG P/N
5961011659827
NSN
5961-01-165-9827
MFG
EATON ELECTRICAL INC. DBA CUTTLER HMMER CMRCL CNTRLS DIV DIV VEHICLE CONTROLS BUSINESS UNIT
Description
MAJOR COMPONENTS: SEMICONDUCTOR DEVICE DIODE 2; THREAD TERMINALS 3,DISCHARGE BLOCK 1
MOUNTING CONFIGURATION: 2 0.156 IN. DIA MTG HOLES ON 2.312 IN. LG CENTER
OVERALL HEIGHT: 1.000 INCHES NOMINAL
OVERALL LENGTH: 2.938 INCHES NOMINAL
OVERALL WIDTH: 1.000 INCHES NOMINAL
Related Searches:
112-050-001
SEMICONDUCTOR DEVICE ASSEMBLY
NSN, MFG P/N
5961011659828
NSN
5961-01-165-9828
112-050-001
SEMICONDUCTOR DEVICE ASSEMBLY
NSN, MFG P/N
5961011659828
NSN
5961-01-165-9828
MFG
AYDIN CORP AYDIN CONTROLS DIV
Description
MAJOR COMPONENTS: DISPLAY MODULE 4; BEZEL 1; SPACER 4; CONNECTOR 4
OVERALL HEIGHT: 0.395 INCHES NOMINAL
OVERALL LENGTH: 1.450 INCHES NOMINAL
OVERALL WIDTH: 0.940 INCHES NOMINAL
Related Searches:
8950R648
SEMICONDUCTOR DEVICE ASSEMBLY
NSN, MFG P/N
5961011659828
NSN
5961-01-165-9828
8950R648
SEMICONDUCTOR DEVICE ASSEMBLY
NSN, MFG P/N
5961011659828
NSN
5961-01-165-9828
MFG
EATON ELECTRICAL INC. DBA CUTTLER HMMER CMRCL CNTRLS DIV DIV VEHICLE CONTROLS BUSINESS UNIT
Description
MAJOR COMPONENTS: DISPLAY MODULE 4; BEZEL 1; SPACER 4; CONNECTOR 4
OVERALL HEIGHT: 0.395 INCHES NOMINAL
OVERALL LENGTH: 1.450 INCHES NOMINAL
OVERALL WIDTH: 0.940 INCHES NOMINAL
Related Searches:
3130083G001
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961011660871
NSN
5961-01-166-0871
3130083G001
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961011660871
NSN
5961-01-166-0871
MFG
ITT CORPORATION
Description
CURRENT RATING PER CHARACTERISTIC: 10.00 MILLIAMPERES MAXIMUM REVERSE CURRENT, DC
INCLOSURE MATERIAL: PLASTIC
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 150.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.065 INCHES MINIMUM AND 0.075 INCHES MAXIMUM
OVERALL LENGTH: 0.145 INCHES MINIMUM AND 0.165 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL CIRCLE DIAMETER: 0.014 INCHES MINIMUM AND 0.016 INCHES MAXIMUM
TERMINAL LENGTH: 1.000 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 100.0 NOMINAL BREAKDOWN VOLTAGE, DC
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GC4211-15
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961011660871
NSN
5961-01-166-0871
MFG
MICROSEMI CORP-MASSACHUSETTS DBA MICROSEMI-LOWELL DIV MICROSEMI - LOWELL
Description
CURRENT RATING PER CHARACTERISTIC: 10.00 MILLIAMPERES MAXIMUM REVERSE CURRENT, DC
INCLOSURE MATERIAL: PLASTIC
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 150.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.065 INCHES MINIMUM AND 0.075 INCHES MAXIMUM
OVERALL LENGTH: 0.145 INCHES MINIMUM AND 0.165 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL CIRCLE DIAMETER: 0.014 INCHES MINIMUM AND 0.016 INCHES MAXIMUM
TERMINAL LENGTH: 1.000 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 100.0 NOMINAL BREAKDOWN VOLTAGE, DC
Related Searches:
JANTX1N6139
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961011662732
NSN
5961-01-166-2732
JANTX1N6139
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961011662732
NSN
5961-01-166-2732
MFG
MILITARY SPECIFICATIONS PROMULGATED BY MILITARY DEPARTMENTS/AGENCIES UNDER AUTHORITY OF DEFENSE STANDARDIZATION MANUAL 4120 3-M
Description
CURRENT RATING PER CHARACTERISTIC: 175.00 MILLIAMPERES MAXIMUM ON-STATE CURRENT, INSTANTANEOUS
DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: JANTX1N6139
ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE: COLLECTOR
FEATURES PROVIDED: HERMETICALLY SEALED CASE
FUNCTION FOR WHICH DESIGNED: TRANSIENT SUPPRESSOR
INCLOSURE MATERIAL: GLASS
MANUFACTURERS CODE: 81349
MOUNTING METHOD: TERMINAL
NON-DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: MIL-PRF-19500/516
OVERALL DIAMETER: 0.185 INCHES MAXIMUM
OVERALL LENGTH: 0.185 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
SPEC/STD CONTROLLING DATA:
TERMINAL LENGTH: 1.300 INCHES MAXIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 8.25 MAXIMUM BREAKDOWN VOLTAGE, DC
Related Searches:
P19500-180-03
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961011662732
NSN
5961-01-166-2732
P19500-180-03
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961011662732
NSN
5961-01-166-2732
MFG
U S ARMY AVIATION AND MISSILE COMMAND
Description
CURRENT RATING PER CHARACTERISTIC: 175.00 MILLIAMPERES MAXIMUM ON-STATE CURRENT, INSTANTANEOUS
DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: JANTX1N6139
ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE: COLLECTOR
FEATURES PROVIDED: HERMETICALLY SEALED CASE
FUNCTION FOR WHICH DESIGNED: TRANSIENT SUPPRESSOR
INCLOSURE MATERIAL: GLASS
MANUFACTURERS CODE: 81349
MOUNTING METHOD: TERMINAL
NON-DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: MIL-PRF-19500/516
OVERALL DIAMETER: 0.185 INCHES MAXIMUM
OVERALL LENGTH: 0.185 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
SPEC/STD CONTROLLING DATA:
TERMINAL LENGTH: 1.300 INCHES MAXIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 8.25 MAXIMUM BREAKDOWN VOLTAGE, DC
Related Searches:
172-10261
TRANSISTOR
NSN, MFG P/N
5961011662772
NSN
5961-01-166-2772
MFG
POWER-ONE DC POWER SUPPLIES
Description
TRANSISTOR
Related Searches:
111-10256
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961011662775
NSN
5961-01-166-2775
MFG
POWER-ONE DC POWER SUPPLIES
Description
CURRENT RATING PER CHARACTERISTIC: 400.00 AMPERES MAXIMUM PEAK FORWARD SURGE CURRENT
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: GLASS
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.405 INCHES MAXIMUM
OVERALL LENGTH: 0.360 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 6.0 WATTS MAXIMUM REVERSE POWER DISSIPATION, PEAK
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL LENGTH: 1.000 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 50.0 MAXIMUM REPETITIVE PEAK REVERSE VOLTAGE, MAXIMUM PEAK TOTAL VALUE
Related Searches:
H980012-001B
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961011662776
NSN
5961-01-166-2776
H980012-001B
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961011662776
NSN
5961-01-166-2776
MFG
RAYTHEON COMPANY
Description
FUNCTION FOR WHICH DESIGNED: TRANSIENT SUPPRESSOR
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.135 INCHES MINIMUM AND 0.185 INCHES MAXIMUM
OVERALL LENGTH: 0.140 INCHES MINIMUM AND 0.225 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL LENGTH: 0.900 INCHES MINIMUM AND 1.300 INCHES MAXIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
Related Searches:
MG1322
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961011662776
NSN
5961-01-166-2776
MFG
MICROSEMI CORPORATION
Description
FUNCTION FOR WHICH DESIGNED: TRANSIENT SUPPRESSOR
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.135 INCHES MINIMUM AND 0.185 INCHES MAXIMUM
OVERALL LENGTH: 0.140 INCHES MINIMUM AND 0.225 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL LENGTH: 0.900 INCHES MINIMUM AND 1.300 INCHES MAXIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
Related Searches:
SS6035
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961011662776
NSN
5961-01-166-2776
MFG
SEMTECH CORPORATION
Description
FUNCTION FOR WHICH DESIGNED: TRANSIENT SUPPRESSOR
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.135 INCHES MINIMUM AND 0.185 INCHES MAXIMUM
OVERALL LENGTH: 0.140 INCHES MINIMUM AND 0.225 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL LENGTH: 0.900 INCHES MINIMUM AND 1.300 INCHES MAXIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
Related Searches:
CB57-41012-10
SEMICONDUCTOR DEVICE ASSEMBLY
NSN, MFG P/N
5961011662964
NSN
5961-01-166-2964
CB57-41012-10
SEMICONDUCTOR DEVICE ASSEMBLY
NSN, MFG P/N
5961011662964
NSN
5961-01-166-2964
MFG
AAI CORPORATION
Description
MAJOR COMPONENTS: DIODE 12; TURRET BOARD 1
OVERALL HEIGHT: 0.410 INCHES NOMINAL
OVERALL LENGTH: 5.250 INCHES NOMINAL
OVERALL WIDTH: 1.500 INCHES NOMINAL
SPECIAL FEATURES: 12 DIODES GE P/N 1N5060
