My Quote Request
No products added yet
5961-00-439-0878
20 Products
461502-01
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961004390878
NSN
5961-00-439-0878
MFG
A V W ELECTRONIC SYSTEMS INC
Description
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 125.0 DEG CELSIUS AMBIENT AIR
OVERALL DIAMETER: 1.350 INCHES NOMINAL
OVERALL LENGTH: 1.087 INCHES NOMINAL
SEMICONDUCTOR MATERIAL: SILICON
Related Searches:
A41443
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961004390706
NSN
5961-00-439-0706
MFG
CNH AMERICA LLC
Description
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: GLASS AND METAL
SEMICONDUCTOR MATERIAL: SILICON
Related Searches:
8544
RECTIFIER,SEMICONDUCTOR DEVICE,UNITIZED
NSN, MFG P/N
5961004390871
NSN
5961-00-439-0871
8544
RECTIFIER,SEMICONDUCTOR DEVICE,UNITIZED
NSN, MFG P/N
5961004390871
NSN
5961-00-439-0871
MFG
CARLISLE AND FINCH COMPANY THE
Description
ABSOLUTE MAXIMUM CURRENT RATING PER CHARACTERISTIC: 2.00 AMPERES AVERAGE FORWARD CURRENT AVERAGED OVER A FULL 60-HZ CYCLE
ABSOLUTE MAXIMUM VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 600.0 PEAK INVERSE VOLTAGE
CIRCUIT CONNECTION STYLE DESIGNATOR: A7 BRIDGE 1 PHASE
MOUNTING METHOD: TERMINAL
OVERALL HEIGHT: 0.687 INCHES NOMINAL
OVERALL LENGTH: 0.750 INCHES NOMINAL
OVERALL WIDTH: 0.750 INCHES NOMINAL
TERMINAL TYPE AND QUANTITY: 4 TURRET
Related Searches:
S6211-2
RECTIFIER,SEMICONDUCTOR DEVICE,UNITIZED
NSN, MFG P/N
5961004390871
NSN
5961-00-439-0871
S6211-2
RECTIFIER,SEMICONDUCTOR DEVICE,UNITIZED
NSN, MFG P/N
5961004390871
NSN
5961-00-439-0871
MFG
ST-SEMICON INC
Description
ABSOLUTE MAXIMUM CURRENT RATING PER CHARACTERISTIC: 2.00 AMPERES AVERAGE FORWARD CURRENT AVERAGED OVER A FULL 60-HZ CYCLE
ABSOLUTE MAXIMUM VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 600.0 PEAK INVERSE VOLTAGE
CIRCUIT CONNECTION STYLE DESIGNATOR: A7 BRIDGE 1 PHASE
MOUNTING METHOD: TERMINAL
OVERALL HEIGHT: 0.687 INCHES NOMINAL
OVERALL LENGTH: 0.750 INCHES NOMINAL
OVERALL WIDTH: 0.750 INCHES NOMINAL
TERMINAL TYPE AND QUANTITY: 4 TURRET
Related Searches:
676608
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961004390875
NSN
5961-00-439-0875
MFG
RAYTHEON TECHNICAL SERVICES COMPANY
Description
CURRENT RATING PER CHARACTERISTIC: 2000.00 MICROAMPERES MAXIMUM REVERSE CURRENT, DC
FEATURES PROVIDED: HERMETICALLY SEALED CASE
III PRECIOUS MATERIAL: SILVER
III PRECIOUS MATERIAL AND LOCATION: TERMINAL SURFACE SILVER
INCLOSURE MATERIAL: GLASS
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 150.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.200 INCHES NOMINAL
OVERALL LENGTH: 0.380 INCHES NOMINAL
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL LENGTH: 1.000 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 24.0 MAXIMUM REVERSE VOLTAGE, PEAK
Related Searches:
676608-01
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961004390875
NSN
5961-00-439-0875
MFG
L-3 COMMUNICATIONS CORPORATION DIV LINK SIMULATION & TRAINING DIVISION
Description
CURRENT RATING PER CHARACTERISTIC: 2000.00 MICROAMPERES MAXIMUM REVERSE CURRENT, DC
FEATURES PROVIDED: HERMETICALLY SEALED CASE
III PRECIOUS MATERIAL: SILVER
III PRECIOUS MATERIAL AND LOCATION: TERMINAL SURFACE SILVER
INCLOSURE MATERIAL: GLASS
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 150.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.200 INCHES NOMINAL
OVERALL LENGTH: 0.380 INCHES NOMINAL
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL LENGTH: 1.000 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 24.0 MAXIMUM REVERSE VOLTAGE, PEAK
Related Searches:
87142B
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961004390875
NSN
5961-00-439-0875
MFG
DLA LAND AND MARITIME
Description
CURRENT RATING PER CHARACTERISTIC: 2000.00 MICROAMPERES MAXIMUM REVERSE CURRENT, DC
FEATURES PROVIDED: HERMETICALLY SEALED CASE
III PRECIOUS MATERIAL: SILVER
III PRECIOUS MATERIAL AND LOCATION: TERMINAL SURFACE SILVER
INCLOSURE MATERIAL: GLASS
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 150.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.200 INCHES NOMINAL
OVERALL LENGTH: 0.380 INCHES NOMINAL
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL LENGTH: 1.000 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 24.0 MAXIMUM REVERSE VOLTAGE, PEAK
Related Searches:
SD2-WE-24-2000-2
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961004390875
NSN
5961-00-439-0875
SD2-WE-24-2000-2
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961004390875
NSN
5961-00-439-0875
MFG
MICRONETICS INC.
Description
CURRENT RATING PER CHARACTERISTIC: 2000.00 MICROAMPERES MAXIMUM REVERSE CURRENT, DC
FEATURES PROVIDED: HERMETICALLY SEALED CASE
III PRECIOUS MATERIAL: SILVER
III PRECIOUS MATERIAL AND LOCATION: TERMINAL SURFACE SILVER
INCLOSURE MATERIAL: GLASS
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 150.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.200 INCHES NOMINAL
OVERALL LENGTH: 0.380 INCHES NOMINAL
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL LENGTH: 1.000 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 24.0 MAXIMUM REVERSE VOLTAGE, PEAK
Related Searches:
SD2WE24-2000-2
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961004390875
NSN
5961-00-439-0875
SD2WE24-2000-2
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961004390875
NSN
5961-00-439-0875
MFG
SOLITRON DEVICES INC.
Description
CURRENT RATING PER CHARACTERISTIC: 2000.00 MICROAMPERES MAXIMUM REVERSE CURRENT, DC
FEATURES PROVIDED: HERMETICALLY SEALED CASE
III PRECIOUS MATERIAL: SILVER
III PRECIOUS MATERIAL AND LOCATION: TERMINAL SURFACE SILVER
INCLOSURE MATERIAL: GLASS
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 150.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.200 INCHES NOMINAL
OVERALL LENGTH: 0.380 INCHES NOMINAL
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL LENGTH: 1.000 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 24.0 MAXIMUM REVERSE VOLTAGE, PEAK
Related Searches:
7286559
RECTIFIER,SEMICONDUCTOR DEVICE
NSN, MFG P/N
5961004390876
NSN
5961-00-439-0876
7286559
RECTIFIER,SEMICONDUCTOR DEVICE
NSN, MFG P/N
5961004390876
NSN
5961-00-439-0876
MFG
GENERAL MOTORS CORP DELCO ELECTRONICS DIV
Description
CIRCUIT CONNECTION STYLE DESIGNATOR: 1 HALF-WAVE 1 PHASE
MATERIAL: SILICON
OPERATING TEMP RANGE: -55.0 TO 150.0 DEG CELSIUS
Related Searches:
CER20
RECTIFIER,SEMICONDUCTOR DEVICE
NSN, MFG P/N
5961004390876
NSN
5961-00-439-0876
MFG
SOLITRON DEVICES INC.
Description
CIRCUIT CONNECTION STYLE DESIGNATOR: 1 HALF-WAVE 1 PHASE
MATERIAL: SILICON
OPERATING TEMP RANGE: -55.0 TO 150.0 DEG CELSIUS
Related Searches:
3044120
SEMICONDUCTOR DEVICE,THYRISTOR
NSN, MFG P/N
5961004390877
NSN
5961-00-439-0877
3044120
SEMICONDUCTOR DEVICE,THYRISTOR
NSN, MFG P/N
5961004390877
NSN
5961-00-439-0877
MFG
HOLOBEAM INC
Description
CURRENT RATING PER CHARACTERISTIC: 75.00 MILLIAMPERES MAXIMUM HOLDING CURRENT, DC AND 100.00 MILLIAMPERES MAXIMUM GATE TRIGGER CURRENT, DC AND 6.00 AMPERES MAXIMUM ON-STATE CURRENT, RMS TOTAL
INCLOSURE MATERIAL: PLASTIC
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 100.0 DEG CELSIUS JUNCTION
MOUNTING FACILITY QUANTITY: 1
MOUNTING METHOD: UNTHREADED HOLE
OVERALL HEIGHT: 0.190 INCHES MAXIMUM
OVERALL LENGTH: 0.600 INCHES NOMINAL
OVERALL WIDTH: 0.400 INCHES NOMINAL
POWER RATING PER CHARACTERISTIC: 10.0 WATTS MAXIMUM PEAK GATE POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 3 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 200.0 MAXIMUM REPETITIVE PEAK OFF-STATE VOLTAGE AND 2.5 MAXIMUM GATE TRIGGER VOLTAGE, DC
Related Searches:
50218-2
SEMICONDUCTOR DEVICE,THYRISTOR
NSN, MFG P/N
5961004390877
NSN
5961-00-439-0877
50218-2
SEMICONDUCTOR DEVICE,THYRISTOR
NSN, MFG P/N
5961004390877
NSN
5961-00-439-0877
MFG
VICTOR TECHNOLOGIES INC
Description
CURRENT RATING PER CHARACTERISTIC: 75.00 MILLIAMPERES MAXIMUM HOLDING CURRENT, DC AND 100.00 MILLIAMPERES MAXIMUM GATE TRIGGER CURRENT, DC AND 6.00 AMPERES MAXIMUM ON-STATE CURRENT, RMS TOTAL
INCLOSURE MATERIAL: PLASTIC
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 100.0 DEG CELSIUS JUNCTION
MOUNTING FACILITY QUANTITY: 1
MOUNTING METHOD: UNTHREADED HOLE
OVERALL HEIGHT: 0.190 INCHES MAXIMUM
OVERALL LENGTH: 0.600 INCHES NOMINAL
OVERALL WIDTH: 0.400 INCHES NOMINAL
POWER RATING PER CHARACTERISTIC: 10.0 WATTS MAXIMUM PEAK GATE POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 3 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 200.0 MAXIMUM REPETITIVE PEAK OFF-STATE VOLTAGE AND 2.5 MAXIMUM GATE TRIGGER VOLTAGE, DC
Related Searches:
SC141B
SEMICONDUCTOR DEVICE,THYRISTOR
NSN, MFG P/N
5961004390877
NSN
5961-00-439-0877
SC141B
SEMICONDUCTOR DEVICE,THYRISTOR
NSN, MFG P/N
5961004390877
NSN
5961-00-439-0877
MFG
GENERAL ELECTRIC CO SEMI-CONDUCTOR PRODUCTS DEPT
Description
CURRENT RATING PER CHARACTERISTIC: 75.00 MILLIAMPERES MAXIMUM HOLDING CURRENT, DC AND 100.00 MILLIAMPERES MAXIMUM GATE TRIGGER CURRENT, DC AND 6.00 AMPERES MAXIMUM ON-STATE CURRENT, RMS TOTAL
INCLOSURE MATERIAL: PLASTIC
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 100.0 DEG CELSIUS JUNCTION
MOUNTING FACILITY QUANTITY: 1
MOUNTING METHOD: UNTHREADED HOLE
OVERALL HEIGHT: 0.190 INCHES MAXIMUM
OVERALL LENGTH: 0.600 INCHES NOMINAL
OVERALL WIDTH: 0.400 INCHES NOMINAL
POWER RATING PER CHARACTERISTIC: 10.0 WATTS MAXIMUM PEAK GATE POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 3 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 200.0 MAXIMUM REPETITIVE PEAK OFF-STATE VOLTAGE AND 2.5 MAXIMUM GATE TRIGGER VOLTAGE, DC
Related Searches:
546031
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961004390878
NSN
5961-00-439-0878
MFG
L-3 COMMUNICATIONS CORPORATION DIV LINK SIMULATION & TRAINING DIVISION
Description
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 125.0 DEG CELSIUS AMBIENT AIR
OVERALL DIAMETER: 1.350 INCHES NOMINAL
OVERALL LENGTH: 1.087 INCHES NOMINAL
SEMICONDUCTOR MATERIAL: SILICON
Related Searches:
A46502-003
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961004390878
NSN
5961-00-439-0878
A46502-003
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961004390878
NSN
5961-00-439-0878
MFG
SAIA-BURGESS INC
Description
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 125.0 DEG CELSIUS AMBIENT AIR
OVERALL DIAMETER: 1.350 INCHES NOMINAL
OVERALL LENGTH: 1.087 INCHES NOMINAL
SEMICONDUCTOR MATERIAL: SILICON
Related Searches:
6088445-1
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961004392527
NSN
5961-00-439-2527
MFG
LOCKHEED MARTIN CORPORATION DBA MISSION SYSTEMS & SENSORS
Description
MANUFACTURERS CODE: 03640
MFR SOURCE CONTROLLING REFERENCE: 6088445-1
SEMICONDUCTOR MATERIAL: SILICON
SPEC/STD CONTROLLING DATA:
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
Related Searches:
DJR1745
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961004392527
NSN
5961-00-439-2527
MFG
GENERAL ELECTRIC CO SEMI-CONDUCTOR PRODUCTS DEPT
Description
MANUFACTURERS CODE: 03640
MFR SOURCE CONTROLLING REFERENCE: 6088445-1
SEMICONDUCTOR MATERIAL: SILICON
SPEC/STD CONTROLLING DATA:
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
Related Searches:
5337-326
TRANSISTOR
NSN, MFG P/N
5961004393539
NSN
5961-00-439-3539
MFG
RECON/OPTICAL INC .
Description
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INTERNAL CONFIGURATION: JUNCTION CONTACT
MANUFACTURERS CODE: 11871
MFR SOURCE CONTROLLING REFERENCE: 5337-326
SEMICONDUCTOR MATERIAL: GERMANIUM
SPEC/STD CONTROLLING DATA:
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: PNP
TERMINAL TYPE AND QUANTITY: 3 UNINSULATED WIRE LEAD
Related Searches:
B10329
TRANSISTOR
NSN, MFG P/N
5961004393539
NSN
5961-00-439-3539
MFG
SOLITRON DEVICES INC.
Description
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INTERNAL CONFIGURATION: JUNCTION CONTACT
MANUFACTURERS CODE: 11871
MFR SOURCE CONTROLLING REFERENCE: 5337-326
SEMICONDUCTOR MATERIAL: GERMANIUM
SPEC/STD CONTROLLING DATA:
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: PNP
TERMINAL TYPE AND QUANTITY: 3 UNINSULATED WIRE LEAD
