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5961-00-631-4999
20 Products
MR1260
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961006314999
NSN
5961-00-631-4999
MFG
FREESCALE SEMICONDUCTOR INC.
Description
CURRENT RATING PER CHARACTERISTIC: 650.00 AMPERES MAXIMUM AVERAGE FORWARD CURRENT AVERAGED OVER A FULL 60-HZ CYCLE
ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE: CATHODE
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 190.0 DEG CELSIUS JUNCTION
MOUNTING FACILITY QUANTITY: 4
MOUNTING METHOD: PRESS FIT AND UNTHREADED HOLE
OVERALL HEIGHT: 1.000 INCHES MAXIMUM
OVERALL LENGTH: 3.250 INCHES NOMINAL
OVERALL WIDTH: 3.250 INCHES NOMINAL
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 1 CASE AND 1 TAB, SOLDER LUG
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 300.0 MAXIMUM WORKING PEAK REVERSE VOLTAGE, MAXIMUM PEAK TOTAL VALUE AND 210.0 MAXIMUM REVERSE VOLTAGE, INSTANTANEOUS
Related Searches:
SM-A-717591-1
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961006314999
NSN
5961-00-631-4999
SM-A-717591-1
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961006314999
NSN
5961-00-631-4999
MFG
US ARMY COMMUNICATIONS & ELECTRONICS MATERIEL READINESS COMMAND LOGISTICS ENGINEERING DIR
Description
CURRENT RATING PER CHARACTERISTIC: 650.00 AMPERES MAXIMUM AVERAGE FORWARD CURRENT AVERAGED OVER A FULL 60-HZ CYCLE
ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE: CATHODE
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 190.0 DEG CELSIUS JUNCTION
MOUNTING FACILITY QUANTITY: 4
MOUNTING METHOD: PRESS FIT AND UNTHREADED HOLE
OVERALL HEIGHT: 1.000 INCHES MAXIMUM
OVERALL LENGTH: 3.250 INCHES NOMINAL
OVERALL WIDTH: 3.250 INCHES NOMINAL
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 1 CASE AND 1 TAB, SOLDER LUG
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 300.0 MAXIMUM WORKING PEAK REVERSE VOLTAGE, MAXIMUM PEAK TOTAL VALUE AND 210.0 MAXIMUM REVERSE VOLTAGE, INSTANTANEOUS
Related Searches:
MR1260R
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961006315000
NSN
5961-00-631-5000
MFG
FREESCALE SEMICONDUCTOR INC.
Description
FEATURES PROVIDED: HERMETICALLY SEALED CASE
OVERALL DIAMETER: 2.885 INCHES NOMINAL
OVERALL HEIGHT: 0.740 INCHES NOMINAL
SEMICONDUCTOR MATERIAL: SILICON
Related Searches:
SM-A-717591-2
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961006315000
NSN
5961-00-631-5000
SM-A-717591-2
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961006315000
NSN
5961-00-631-5000
MFG
US ARMY COMMUNICATIONS & ELECTRONICS MATERIEL READINESS COMMAND LOGISTICS ENGINEERING DIR
Description
FEATURES PROVIDED: HERMETICALLY SEALED CASE
OVERALL DIAMETER: 2.885 INCHES NOMINAL
OVERALL HEIGHT: 0.740 INCHES NOMINAL
SEMICONDUCTOR MATERIAL: SILICON
Related Searches:
SMA717664-1
SEMICONDUCTOR DEVICE,THYRISTOR
NSN, MFG P/N
5961006315022
NSN
5961-00-631-5022
SMA717664-1
SEMICONDUCTOR DEVICE,THYRISTOR
NSN, MFG P/N
5961006315022
NSN
5961-00-631-5022
MFG
US ARMY COMMUNICATIONS & ELECTRONICS MATERIEL READINESS COMMAND LOGISTICS ENGINEERING DIR
Description
SEMICONDUCTOR DEVICE,THYRISTOR
Related Searches:
6705K42P001
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961006315810
NSN
5961-00-631-5810
6705K42P001
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961006315810
NSN
5961-00-631-5810
MFG
GENERAL ELECTRIC CO INSTRUMENT PRODUCTS SECTION
Description
SEMICONDUCTOR DEVICE,DIODE
Related Searches:
594A4
TRANSISTOR
NSN, MFG P/N
5961006316964
NSN
5961-00-631-6964
MFG
CARDWELL CONDENSER CORP LAPOINTE-ADMIRAL DIV
Description
DESIGN CONTROL REFERENCE: 594A4
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INTERNAL CONFIGURATION: JUNCTION CONTACT
MANUFACTURERS CODE: 94033
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: NPN
TERMINAL TYPE AND QUANTITY: 3 UNINSULATED WIRE LEAD
THE MANUFACTURERS DATA:
Related Searches:
2N439
TRANSISTOR
NSN, MFG P/N
5961006317238
NSN
5961-00-631-7238
MFG
CBS INC
Description
DESIGN CONTROL REFERENCE: 2N439
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INTERNAL CONFIGURATION: JUNCTION CONTACT
INTERNAL JUNCTION CONFIGURATION: NPN
MANUFACTURERS CODE: 71575
SEMICONDUCTOR MATERIAL: GERMANIUM
TERMINAL TYPE AND QUANTITY: 3 UNINSULATED WIRE LEAD
THE MANUFACTURERS DATA:
Related Searches:
479-0581-001
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961006318497
NSN
5961-00-631-8497
479-0581-001
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961006318497
NSN
5961-00-631-8497
MFG
BOEING COMPANY THE DBA BOEING DIV DEFENSE SPACE & SECURITY - NETWORK & SPACE SYSTEMS
Description
III END ITEM IDENTIFICATION: SEMICONDUCTORS DEVICES AND ASSOCIATED HARDWARE
Related Searches:
1YR1
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961006319160
NSN
5961-00-631-9160
MFG
INTERNATIONAL RECTIFIER CORPORATION
Description
DESIGN CONTROL REFERENCE: 1YR1
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: GLASS
MANUFACTURERS CODE: 81483
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
THE MANUFACTURERS DATA:
Related Searches:
109304-0311
RECTIFIER,SEMICONDUCTOR DEVICE,UNITIZED
NSN, MFG P/N
5961006320428
NSN
5961-00-632-0428
109304-0311
RECTIFIER,SEMICONDUCTOR DEVICE,UNITIZED
NSN, MFG P/N
5961006320428
NSN
5961-00-632-0428
MFG
RANTEC POWER SYSTEMS INC
Description
ABSOLUTE MAXIMUM CURRENT RATING PER CHARACTERISTIC: 7.50 AMPERES AVERAGE FORWARD CURRENT AVERAGED OVER A FULL 60-HZ CYCLE AND 100.00 AMPERES PEAK FORWARD SURGE CURRENT
ABSOLUTE MAXIMUM VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 300.0 REVERSE VOLTAGE, DC
CIRCUIT CONNECTION STYLE DESIGNATOR: A8 BRIDGE 3 PHASE
MATERIAL: SILICON
MOUNTING METHOD: UNTHREADED HOLE
TERMINAL TYPE AND QUANTITY: 5 TURRET
Related Searches:
8582-2847
RECTIFIER,SEMICONDUCTOR DEVICE
NSN, MFG P/N
5961006320628
NSN
5961-00-632-0628
8582-2847
RECTIFIER,SEMICONDUCTOR DEVICE
NSN, MFG P/N
5961006320628
NSN
5961-00-632-0628
MFG
RECON/OPTICAL INC .
Description
ABSOLUTE MAXIMUM CURRENT RATING PER CHARACTERISTIC: 25.00 AMPERES AVERAGE FORWARD CURRENT AVERAGED OVER A FULL 60-HZ CYCLE
ABSOLUTE MAXIMUM VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 100.0 WORKING PEAK REVERSE VOLTAGE, MAXIMUM PEAK TOTAL VALUE
CIRCUIT CONNECTION STYLE DESIGNATOR: 7 BRIDGE 1 PHASE
MATERIAL: SILICON
MOUNTING METHOD: UNTHREADED HOLE
OPERATING TEMP RANGE: -65.0 TO 175.0 DEG CELSIUS
OVERALL HEIGHT: 1.062 INCHES MAXIMUM
OVERALL LENGTH: 1.125 INCHES NOMINAL
TERMINAL TYPE AND QUANTITY: 4 QUICK DISCONNECT, MALE
Related Searches:
NBS25-100F
RECTIFIER,SEMICONDUCTOR DEVICE
NSN, MFG P/N
5961006320628
NSN
5961-00-632-0628
NBS25-100F
RECTIFIER,SEMICONDUCTOR DEVICE
NSN, MFG P/N
5961006320628
NSN
5961-00-632-0628
MFG
DIODES INC
Description
ABSOLUTE MAXIMUM CURRENT RATING PER CHARACTERISTIC: 25.00 AMPERES AVERAGE FORWARD CURRENT AVERAGED OVER A FULL 60-HZ CYCLE
ABSOLUTE MAXIMUM VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 100.0 WORKING PEAK REVERSE VOLTAGE, MAXIMUM PEAK TOTAL VALUE
CIRCUIT CONNECTION STYLE DESIGNATOR: 7 BRIDGE 1 PHASE
MATERIAL: SILICON
MOUNTING METHOD: UNTHREADED HOLE
OPERATING TEMP RANGE: -65.0 TO 175.0 DEG CELSIUS
OVERALL HEIGHT: 1.062 INCHES MAXIMUM
OVERALL LENGTH: 1.125 INCHES NOMINAL
TERMINAL TYPE AND QUANTITY: 4 QUICK DISCONNECT, MALE
Related Searches:
SA4682
RECTIFIER,SEMICONDUCTOR DEVICE
NSN, MFG P/N
5961006320628
NSN
5961-00-632-0628
SA4682
RECTIFIER,SEMICONDUCTOR DEVICE
NSN, MFG P/N
5961006320628
NSN
5961-00-632-0628
MFG
SEMTECH CORPUS CHRISTI.A. DE C.V. REYNOSA FACILITY
Description
ABSOLUTE MAXIMUM CURRENT RATING PER CHARACTERISTIC: 25.00 AMPERES AVERAGE FORWARD CURRENT AVERAGED OVER A FULL 60-HZ CYCLE
ABSOLUTE MAXIMUM VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 100.0 WORKING PEAK REVERSE VOLTAGE, MAXIMUM PEAK TOTAL VALUE
CIRCUIT CONNECTION STYLE DESIGNATOR: 7 BRIDGE 1 PHASE
MATERIAL: SILICON
MOUNTING METHOD: UNTHREADED HOLE
OPERATING TEMP RANGE: -65.0 TO 175.0 DEG CELSIUS
OVERALL HEIGHT: 1.062 INCHES MAXIMUM
OVERALL LENGTH: 1.125 INCHES NOMINAL
TERMINAL TYPE AND QUANTITY: 4 QUICK DISCONNECT, MALE
Related Searches:
581R345H01
SEMICONDUCTOR DEVICES,UNITIZED
NSN, MFG P/N
5961006320666
NSN
5961-00-632-0666
581R345H01
SEMICONDUCTOR DEVICES,UNITIZED
NSN, MFG P/N
5961006320666
NSN
5961-00-632-0666
MFG
NORTHROP GRUMMAN SYSTEMS CORPORATION DIV NORTHROP GRUMMAN SYSTEMS CORPORATION ELECTRONIC SYSTEMS
Description
DESIGN CONTROL REFERENCE: 581R345H01
MANUFACTURERS CODE: 97942
SPECIAL FEATURES: SET,NPN SILICON TRANSISTORS,DARLINGTON-CONNECTED,HERMETICALLY SEALED PKG,1.230 IN.LG,0.700 IN.W,0.295 IN.H,75W DISSIPATION AT 25 DEG C;
THE MANUFACTURERS DATA:
Related Searches:
SJ3820H-1
SEMICONDUCTOR DEVICES,UNITIZED
NSN, MFG P/N
5961006320666
NSN
5961-00-632-0666
SJ3820H-1
SEMICONDUCTOR DEVICES,UNITIZED
NSN, MFG P/N
5961006320666
NSN
5961-00-632-0666
MFG
FREESCALE SEMICONDUCTOR INC.
Description
DESIGN CONTROL REFERENCE: 581R345H01
MANUFACTURERS CODE: 97942
SPECIAL FEATURES: SET,NPN SILICON TRANSISTORS,DARLINGTON-CONNECTED,HERMETICALLY SEALED PKG,1.230 IN.LG,0.700 IN.W,0.295 IN.H,75W DISSIPATION AT 25 DEG C;
THE MANUFACTURERS DATA:
Related Searches:
0050222700
TRANSISTOR
NSN, MFG P/N
5961006321313
NSN
5961-00-632-1313
MFG
SYNTEGRA / USA/ INC COMPUTER PARTS AND SUPPLIES ARH205
Description
CURRENT RATING PER CHARACTERISTIC: 5.00 AMPERES MAXIMUM BASE CURRENT, DC AND 16.00 AMPERES MAXIMUM COLLECTOR CURRENT, DC
ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE: COLLECTOR
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: JUNCTION CONTACT
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: TO-3
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 200.0 DEG CELSIUS JUNCTION
MOUNTING FACILITY QUANTITY: 2
MOUNTING METHOD: UNTHREADED HOLE
OVERALL HEIGHT: 0.450 INCHES MAXIMUM
OVERALL LENGTH: 1.573 INCHES MAXIMUM
OVERALL WIDTH: 1.050 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 200.0 WATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: NPN
SPECIFICATION/STANDARD DATA: 80131-RELEASE5926 PROFESSIONAL/INDUSTRIAL ASSOCIATION SPECIFICATION
TERMINAL TYPE AND QUANTITY: 1 CASE AND 2 PIN
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 140.0 MAXIMUM COLLECTOR TO BASE VOLTAGE/STATIC/EMIT
Related Searches:
148-0139-001
TRANSISTOR
NSN, MFG P/N
5961006321313
NSN
5961-00-632-1313
MFG
SHUGART CORP DBA INTL ASSEMBLY SPECIALISTS
Description
CURRENT RATING PER CHARACTERISTIC: 5.00 AMPERES MAXIMUM BASE CURRENT, DC AND 16.00 AMPERES MAXIMUM COLLECTOR CURRENT, DC
ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE: COLLECTOR
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: JUNCTION CONTACT
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: TO-3
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 200.0 DEG CELSIUS JUNCTION
MOUNTING FACILITY QUANTITY: 2
MOUNTING METHOD: UNTHREADED HOLE
OVERALL HEIGHT: 0.450 INCHES MAXIMUM
OVERALL LENGTH: 1.573 INCHES MAXIMUM
OVERALL WIDTH: 1.050 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 200.0 WATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: NPN
SPECIFICATION/STANDARD DATA: 80131-RELEASE5926 PROFESSIONAL/INDUSTRIAL ASSOCIATION SPECIFICATION
TERMINAL TYPE AND QUANTITY: 1 CASE AND 2 PIN
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 140.0 MAXIMUM COLLECTOR TO BASE VOLTAGE/STATIC/EMIT
Related Searches:
1604220
TRANSISTOR
NSN, MFG P/N
5961006321313
NSN
5961-00-632-1313
MFG
LOCKHEED MARTIN CORPORATION DBA LOCKHEED MARTIN MS2
Description
CURRENT RATING PER CHARACTERISTIC: 5.00 AMPERES MAXIMUM BASE CURRENT, DC AND 16.00 AMPERES MAXIMUM COLLECTOR CURRENT, DC
ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE: COLLECTOR
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: JUNCTION CONTACT
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: TO-3
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 200.0 DEG CELSIUS JUNCTION
MOUNTING FACILITY QUANTITY: 2
MOUNTING METHOD: UNTHREADED HOLE
OVERALL HEIGHT: 0.450 INCHES MAXIMUM
OVERALL LENGTH: 1.573 INCHES MAXIMUM
OVERALL WIDTH: 1.050 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 200.0 WATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: NPN
SPECIFICATION/STANDARD DATA: 80131-RELEASE5926 PROFESSIONAL/INDUSTRIAL ASSOCIATION SPECIFICATION
TERMINAL TYPE AND QUANTITY: 1 CASE AND 2 PIN
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 140.0 MAXIMUM COLLECTOR TO BASE VOLTAGE/STATIC/EMIT
Related Searches:
2N5631
TRANSISTOR
NSN, MFG P/N
5961006321313
NSN
5961-00-632-1313
MFG
ELECTRONIC INDUSTRIES ASSOCIATION
Description
CURRENT RATING PER CHARACTERISTIC: 5.00 AMPERES MAXIMUM BASE CURRENT, DC AND 16.00 AMPERES MAXIMUM COLLECTOR CURRENT, DC
ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE: COLLECTOR
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: JUNCTION CONTACT
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: TO-3
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 200.0 DEG CELSIUS JUNCTION
MOUNTING FACILITY QUANTITY: 2
MOUNTING METHOD: UNTHREADED HOLE
OVERALL HEIGHT: 0.450 INCHES MAXIMUM
OVERALL LENGTH: 1.573 INCHES MAXIMUM
OVERALL WIDTH: 1.050 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 200.0 WATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: NPN
SPECIFICATION/STANDARD DATA: 80131-RELEASE5926 PROFESSIONAL/INDUSTRIAL ASSOCIATION SPECIFICATION
TERMINAL TYPE AND QUANTITY: 1 CASE AND 2 PIN
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 140.0 MAXIMUM COLLECTOR TO BASE VOLTAGE/STATIC/EMIT
