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5961-00-710-3049

20 Products

1-5Z15D5

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961007103049

NSN

5961-00-710-3049

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1-5Z15D5

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961007103049

NSN

5961-00-710-3049

MFG

MICROSEMI CORP.-SCOTTSDALE DBA MICROSEMI

Description

DESIGN CONTROL REFERENCE: 1-5Z15D5
FEATURES PROVIDED: HERMETICALLY SEALED CASE
MANUFACTURERS CODE: 12954
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
THE MANUFACTURERS DATA:

1N2043

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961007103134

NSN

5961-00-710-3134

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1N2043

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961007103134

NSN

5961-00-710-3134

MFG

GILBERT ENGINEERING CO INC/INCON SUB OF TRANSITRON ELECTRONIC CORP

Description

CURRENT RATING PER CHARACTERISTIC: 1.00 AMPERES MAXIMUM MAXIMUM REVERSE SURGE CURRENT
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 175.0 DEG CELSIUS AMBIENT AIR
MOUNTING FACILITY QUANTITY: 1
MOUNTING METHOD: THREADED STUD
NOMINAL THREAD SIZE: 0.190 INCHES
OVERALL DIAMETER: 0.437 INCHES MAXIMUM
OVERALL LENGTH: 0.405 INCHES MAXIMUM
OVERALL WIDTH ACROSS FLATS: 0.424 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 10.0 WATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 2 TAB, SOLDER LUG
THREAD SERIES DESIGNATOR: UNF
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 7.1 MAXIMUM NOMINAL REGULATOR VOLTAGE

SV906

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961007103134

NSN

5961-00-710-3134

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SV906

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961007103134

NSN

5961-00-710-3134

MFG

ENTRON INDUSTRIES LIMITED PARTNERSHIP DBA ENTRON INDUSTRIES PROPERTY DIV

Description

CURRENT RATING PER CHARACTERISTIC: 1.00 AMPERES MAXIMUM MAXIMUM REVERSE SURGE CURRENT
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 175.0 DEG CELSIUS AMBIENT AIR
MOUNTING FACILITY QUANTITY: 1
MOUNTING METHOD: THREADED STUD
NOMINAL THREAD SIZE: 0.190 INCHES
OVERALL DIAMETER: 0.437 INCHES MAXIMUM
OVERALL LENGTH: 0.405 INCHES MAXIMUM
OVERALL WIDTH ACROSS FLATS: 0.424 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 10.0 WATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 2 TAB, SOLDER LUG
THREAD SERIES DESIGNATOR: UNF
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 7.1 MAXIMUM NOMINAL REGULATOR VOLTAGE

1854-0041

TRANSISTOR

NSN, MFG P/N

5961007103934

NSN

5961-00-710-3934

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1854-0041

TRANSISTOR

NSN, MFG P/N

5961007103934

NSN

5961-00-710-3934

MFG

AGILENT TECHNOLOGIES INC. DBA NORTH AMERICAN CONTACT CENTER DIV AGILENT BUSINESS CENTER

Description

CURRENT RATING PER CHARACTERISTIC: 0.01 MICROAMPERES MAXIMUM COLLECTOR CUTOFF CURRENT, DC, EMITTER OPEN
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: JUNCTION CONTACT
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.209 INCHES MINIMUM AND 0.230 INCHES MAXIMUM
OVERALL LENGTH: 0.170 INCHES MINIMUM AND 0.210 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 200.0 MILLIWATTS MAXIMUM COLLECTOR POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: NPN
TERMINAL CIRCLE DIAMETER: 0.100 INCHES NOMINAL
TERMINAL LENGTH: 0.500 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 4 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 35.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-BASE, EMITTER OPEN AND 20.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-EMITTER, BASE OPEN AND 3.0 MAXIMUM BREAKDOWN VOLTAGE, EMITTER-TO-BASE, COLLECTOR OPEN

2N2708

TRANSISTOR

NSN, MFG P/N

5961007103934

NSN

5961-00-710-3934

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2N2708

TRANSISTOR

NSN, MFG P/N

5961007103934

NSN

5961-00-710-3934

MFG

ELECTRONIC INDUSTRIES ASSOCIATION

Description

CURRENT RATING PER CHARACTERISTIC: 0.01 MICROAMPERES MAXIMUM COLLECTOR CUTOFF CURRENT, DC, EMITTER OPEN
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: JUNCTION CONTACT
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.209 INCHES MINIMUM AND 0.230 INCHES MAXIMUM
OVERALL LENGTH: 0.170 INCHES MINIMUM AND 0.210 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 200.0 MILLIWATTS MAXIMUM COLLECTOR POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: NPN
TERMINAL CIRCLE DIAMETER: 0.100 INCHES NOMINAL
TERMINAL LENGTH: 0.500 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 4 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 35.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-BASE, EMITTER OPEN AND 20.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-EMITTER, BASE OPEN AND 3.0 MAXIMUM BREAKDOWN VOLTAGE, EMITTER-TO-BASE, COLLECTOR OPEN

531-231-014

TRANSISTOR

NSN, MFG P/N

5961007103934

NSN

5961-00-710-3934

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531-231-014

TRANSISTOR

NSN, MFG P/N

5961007103934

NSN

5961-00-710-3934

MFG

ELETTRONICA SPA

Description

CURRENT RATING PER CHARACTERISTIC: 0.01 MICROAMPERES MAXIMUM COLLECTOR CUTOFF CURRENT, DC, EMITTER OPEN
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: JUNCTION CONTACT
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.209 INCHES MINIMUM AND 0.230 INCHES MAXIMUM
OVERALL LENGTH: 0.170 INCHES MINIMUM AND 0.210 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 200.0 MILLIWATTS MAXIMUM COLLECTOR POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: NPN
TERMINAL CIRCLE DIAMETER: 0.100 INCHES NOMINAL
TERMINAL LENGTH: 0.500 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 4 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 35.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-BASE, EMITTER OPEN AND 20.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-EMITTER, BASE OPEN AND 3.0 MAXIMUM BREAKDOWN VOLTAGE, EMITTER-TO-BASE, COLLECTOR OPEN

555245-108

TRANSISTOR

NSN, MFG P/N

5961007103934

NSN

5961-00-710-3934

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555245-108

TRANSISTOR

NSN, MFG P/N

5961007103934

NSN

5961-00-710-3934

MFG

STROMBERG-CARLSON CORP A PLESSEY TELECOMMUNICATIONS CO

Description

CURRENT RATING PER CHARACTERISTIC: 0.01 MICROAMPERES MAXIMUM COLLECTOR CUTOFF CURRENT, DC, EMITTER OPEN
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: JUNCTION CONTACT
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.209 INCHES MINIMUM AND 0.230 INCHES MAXIMUM
OVERALL LENGTH: 0.170 INCHES MINIMUM AND 0.210 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 200.0 MILLIWATTS MAXIMUM COLLECTOR POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: NPN
TERMINAL CIRCLE DIAMETER: 0.100 INCHES NOMINAL
TERMINAL LENGTH: 0.500 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 4 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 35.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-BASE, EMITTER OPEN AND 20.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-EMITTER, BASE OPEN AND 3.0 MAXIMUM BREAKDOWN VOLTAGE, EMITTER-TO-BASE, COLLECTOR OPEN

JAN2N2708

TRANSISTOR

NSN, MFG P/N

5961007103934

NSN

5961-00-710-3934

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JAN2N2708

TRANSISTOR

NSN, MFG P/N

5961007103934

NSN

5961-00-710-3934

MFG

MILITARY SPECIFICATIONS PROMULGATED BY MILITARY DEPARTMENTS/AGENCIES UNDER AUTHORITY OF DEFENSE STANDARDIZATION MANUAL 4120 3-M

Description

CURRENT RATING PER CHARACTERISTIC: 0.01 MICROAMPERES MAXIMUM COLLECTOR CUTOFF CURRENT, DC, EMITTER OPEN
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: JUNCTION CONTACT
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.209 INCHES MINIMUM AND 0.230 INCHES MAXIMUM
OVERALL LENGTH: 0.170 INCHES MINIMUM AND 0.210 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 200.0 MILLIWATTS MAXIMUM COLLECTOR POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: NPN
TERMINAL CIRCLE DIAMETER: 0.100 INCHES NOMINAL
TERMINAL LENGTH: 0.500 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 4 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 35.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-BASE, EMITTER OPEN AND 20.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-EMITTER, BASE OPEN AND 3.0 MAXIMUM BREAKDOWN VOLTAGE, EMITTER-TO-BASE, COLLECTOR OPEN

Q0158

TRANSISTOR

NSN, MFG P/N

5961007103934

NSN

5961-00-710-3934

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Q0158

TRANSISTOR

NSN, MFG P/N

5961007103934

NSN

5961-00-710-3934

MFG

BEI SENSORS & SYSTEMS COMPANY INC. DBA SYSTRON DONNER INERTIAL DIV SYSTRON DONNER INERTIAL DIVISION

Description

CURRENT RATING PER CHARACTERISTIC: 0.01 MICROAMPERES MAXIMUM COLLECTOR CUTOFF CURRENT, DC, EMITTER OPEN
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: JUNCTION CONTACT
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.209 INCHES MINIMUM AND 0.230 INCHES MAXIMUM
OVERALL LENGTH: 0.170 INCHES MINIMUM AND 0.210 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 200.0 MILLIWATTS MAXIMUM COLLECTOR POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: NPN
TERMINAL CIRCLE DIAMETER: 0.100 INCHES NOMINAL
TERMINAL LENGTH: 0.500 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 4 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 35.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-BASE, EMITTER OPEN AND 20.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-EMITTER, BASE OPEN AND 3.0 MAXIMUM BREAKDOWN VOLTAGE, EMITTER-TO-BASE, COLLECTOR OPEN

1N2157R

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961007104181

NSN

5961-00-710-4181

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1N2157R

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961007104181

NSN

5961-00-710-4181

MFG

BAE SYSTEMS INFORMATION AND ELECTRONIC SYSTEMS INTEGRATION I

Description

FEATURES PROVIDED: HERMETICALLY SEALED CASE
NONDEFINITIVE SPEC/STD DATA: 1N2157R TYPE
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 2 TAB, SOLDER LUG

RELEASE2474

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961007104181

NSN

5961-00-710-4181

View More Info

RELEASE2474

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961007104181

NSN

5961-00-710-4181

MFG

ELECTRONIC INDUSTRIES ASSOCIATION

Description

FEATURES PROVIDED: HERMETICALLY SEALED CASE
NONDEFINITIVE SPEC/STD DATA: 1N2157R TYPE
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 2 TAB, SOLDER LUG

48-36434A01

SEMICONDUCTOR DEVICE SET

NSN, MFG P/N

5961007104183

NSN

5961-00-710-4183

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48-36434A01

SEMICONDUCTOR DEVICE SET

NSN, MFG P/N

5961007104183

NSN

5961-00-710-4183

MFG

FREESCALE SEMICONDUCTOR INC.

Description

COMPONENT FUNCTION RELATIONSHIP: MATCHED
COMPONENT NAME AND QUANTITY: 2 SEMICONDUCTOR DEVICE DIODE

720625-7

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961007104542

NSN

5961-00-710-4542

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720625-7

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961007104542

NSN

5961-00-710-4542

MFG

RAYTHEON COMPANY

Description

DESIGN CONTROL REFERENCE: HD6836
FEATURES PROVIDED: HERMETICALLY SEALED CASE
MANUFACTURERS CODE: 05869
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
THE MANUFACTURERS DATA:

720635-007

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961007104542

NSN

5961-00-710-4542

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720635-007

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961007104542

NSN

5961-00-710-4542

MFG

RAYTHEON COMPANY DBA RAYTHEON

Description

DESIGN CONTROL REFERENCE: HD6836
FEATURES PROVIDED: HERMETICALLY SEALED CASE
MANUFACTURERS CODE: 05869
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
THE MANUFACTURERS DATA:

0SS00339

SEMICONDUCTOR DEVICE,PHOTO

NSN, MFG P/N

5961007105041

NSN

5961-00-710-5041

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0SS00339

SEMICONDUCTOR DEVICE,PHOTO

NSN, MFG P/N

5961007105041

NSN

5961-00-710-5041

MFG

EASTMAN KODAK CO COMMERCIAL & GOVERNMENT SYSTEMS

Description

OVERALL HEIGHT: 1.500 MILLIMETERS NOMINAL
OVERALL LENGTH: 28.000 MILLIMETERS NOMINAL
OVERALL WIDTH: 5.500 MILLIMETERS NOMINAL

4651-1

SEMICONDUCTOR DEVICE,PHOTO

NSN, MFG P/N

5961007105041

NSN

5961-00-710-5041

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4651-1

SEMICONDUCTOR DEVICE,PHOTO

NSN, MFG P/N

5961007105041

NSN

5961-00-710-5041

MFG

NORTHROP GRUMMAN SYSTEMS CORPORATION DIV ES DEFENSIVE SYSTEMS DIVISION

Description

OVERALL HEIGHT: 1.500 MILLIMETERS NOMINAL
OVERALL LENGTH: 28.000 MILLIMETERS NOMINAL
OVERALL WIDTH: 5.500 MILLIMETERS NOMINAL

5535-1

SEMICONDUCTOR DEVICE,PHOTO

NSN, MFG P/N

5961007105041

NSN

5961-00-710-5041

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5535-1

SEMICONDUCTOR DEVICE,PHOTO

NSN, MFG P/N

5961007105041

NSN

5961-00-710-5041

MFG

GRASEBY ELECTRO-OPTICS INC GRASEBY INFRARED DIV

Description

OVERALL HEIGHT: 1.500 MILLIMETERS NOMINAL
OVERALL LENGTH: 28.000 MILLIMETERS NOMINAL
OVERALL WIDTH: 5.500 MILLIMETERS NOMINAL

FL9038

SEMICONDUCTOR DEVICE,PHOTO

NSN, MFG P/N

5961007105041

NSN

5961-00-710-5041

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FL9038

SEMICONDUCTOR DEVICE,PHOTO

NSN, MFG P/N

5961007105041

NSN

5961-00-710-5041

MFG

CROUSE-HINDS CO

Description

OVERALL HEIGHT: 1.500 MILLIMETERS NOMINAL
OVERALL LENGTH: 28.000 MILLIMETERS NOMINAL
OVERALL WIDTH: 5.500 MILLIMETERS NOMINAL

KQ-20-0520

SEMICONDUCTOR DEVICE,PHOTO

NSN, MFG P/N

5961007105041

NSN

5961-00-710-5041

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KQ-20-0520

SEMICONDUCTOR DEVICE,PHOTO

NSN, MFG P/N

5961007105041

NSN

5961-00-710-5041

MFG

AVAGO TECHNOLOGIES U.S. INC. DIV AVAGO TECHNOLOGIES

Description

OVERALL HEIGHT: 1.500 MILLIMETERS NOMINAL
OVERALL LENGTH: 28.000 MILLIMETERS NOMINAL
OVERALL WIDTH: 5.500 MILLIMETERS NOMINAL

Q20X5MM

SEMICONDUCTOR DEVICE,PHOTO

NSN, MFG P/N

5961007105041

NSN

5961-00-710-5041

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Q20X5MM

SEMICONDUCTOR DEVICE,PHOTO

NSN, MFG P/N

5961007105041

NSN

5961-00-710-5041

MFG

EASTMAN KODAK COMPANY DBA KODAK

Description

OVERALL HEIGHT: 1.500 MILLIMETERS NOMINAL
OVERALL LENGTH: 28.000 MILLIMETERS NOMINAL
OVERALL WIDTH: 5.500 MILLIMETERS NOMINAL