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5961-00-850-9869
20 Products
174-25566-40
TRANSISTOR
NSN, MFG P/N
5961008509869
NSN
5961-00-850-9869
MFG
GTE COMMUNICATION SYSTEMS CORP
Description
ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE: COLLECTOR
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: JUNCTION CONTACT
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 200.0 DEG CELSIUS JUNCTION
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.230 INCHES NOMINAL
OVERALL LENGTH: 0.210 INCHES NOMINAL
POWER RATING PER CHARACTERISTIC: 360.0 MILLIWATTS MAXIMUM COLLECTOR POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: PNP
TERMINAL CIRCLE DIAMETER: 0.100 INCHES NOMINAL
TERMINAL LENGTH: 0.500 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 3 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: -60.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-BASE, EMITTER OPEN AND -5.0 MAXIMUM BREAKDOWN VOLTAGE, EMITTER-TO-BASE, COLLECTOR OPEN
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MM999
TRANSISTOR
NSN, MFG P/N
5961008509869
NSN
5961-00-850-9869
MFG
FREESCALE SEMICONDUCTOR INC.
Description
ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE: COLLECTOR
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: JUNCTION CONTACT
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 200.0 DEG CELSIUS JUNCTION
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.230 INCHES NOMINAL
OVERALL LENGTH: 0.210 INCHES NOMINAL
POWER RATING PER CHARACTERISTIC: 360.0 MILLIWATTS MAXIMUM COLLECTOR POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: PNP
TERMINAL CIRCLE DIAMETER: 0.100 INCHES NOMINAL
TERMINAL LENGTH: 0.500 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 3 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: -60.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-BASE, EMITTER OPEN AND -5.0 MAXIMUM BREAKDOWN VOLTAGE, EMITTER-TO-BASE, COLLECTOR OPEN
Related Searches:
2053776-0701
SEMICONDUCTOR DEVICES,UNITIZED
NSN, MFG P/N
5961008509956
NSN
5961-00-850-9956
2053776-0701
SEMICONDUCTOR DEVICES,UNITIZED
NSN, MFG P/N
5961008509956
NSN
5961-00-850-9956
MFG
RAYTHEON COMPANY DBA RAYTHEON
Description
COMPONENT NAME AND QUANTITY: 2 TRANSISTOR
CURRENT RATING PER CHARACTERISTIC: 50.00 MILLIAMPERES MAXIMUM COLLECTOR CURRENT, DC ALL TRANSISTOR
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: TO-71
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.230 INCHES MAXIMUM
OVERALL LENGTH: 0.210 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 250.0 MILLIWATTS MAXIMUM TOTAL POWER DISSIPATION ALL TRANSISTOR
SEMICONDUCTOR MATERIAL: SILICON ALL TRANSISTOR
SPECIAL FEATURES: ALL TRANSISTOR JUNCTION PATTERN ARRANGEMENT: PNP
SPECIFICATION/STANDARD DATA: 80131-RELEASE5128 PROFESSIONAL/INDUSTRIAL ASSOCIATION SPECIFICATION
TERMINAL CIRCLE DIAMETER: 0.100 INCHES NOMINAL
TERMINAL LENGTH: 0.500 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 8 UNINSULATED WIRE LEAD
TRANSFER RATIO: 150.0 MAXIMUM SMALL-SIGNAL SHORT-CIRCUIT FORWARD CURRENT TRANSFER RATIO, COMMON-EMITTER ALL TRANSISTOR
VOLTAGE RATING IN
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2N3800
SEMICONDUCTOR DEVICES,UNITIZED
NSN, MFG P/N
5961008509956
NSN
5961-00-850-9956
2N3800
SEMICONDUCTOR DEVICES,UNITIZED
NSN, MFG P/N
5961008509956
NSN
5961-00-850-9956
MFG
ELECTRONIC INDUSTRIES ASSOCIATION
Description
COMPONENT NAME AND QUANTITY: 2 TRANSISTOR
CURRENT RATING PER CHARACTERISTIC: 50.00 MILLIAMPERES MAXIMUM COLLECTOR CURRENT, DC ALL TRANSISTOR
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: TO-71
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.230 INCHES MAXIMUM
OVERALL LENGTH: 0.210 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 250.0 MILLIWATTS MAXIMUM TOTAL POWER DISSIPATION ALL TRANSISTOR
SEMICONDUCTOR MATERIAL: SILICON ALL TRANSISTOR
SPECIAL FEATURES: ALL TRANSISTOR JUNCTION PATTERN ARRANGEMENT: PNP
SPECIFICATION/STANDARD DATA: 80131-RELEASE5128 PROFESSIONAL/INDUSTRIAL ASSOCIATION SPECIFICATION
TERMINAL CIRCLE DIAMETER: 0.100 INCHES NOMINAL
TERMINAL LENGTH: 0.500 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 8 UNINSULATED WIRE LEAD
TRANSFER RATIO: 150.0 MAXIMUM SMALL-SIGNAL SHORT-CIRCUIT FORWARD CURRENT TRANSFER RATIO, COMMON-EMITTER ALL TRANSISTOR
VOLTAGE RATING IN
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2N3800A
SEMICONDUCTOR DEVICES,UNITIZED
NSN, MFG P/N
5961008509956
NSN
5961-00-850-9956
2N3800A
SEMICONDUCTOR DEVICES,UNITIZED
NSN, MFG P/N
5961008509956
NSN
5961-00-850-9956
MFG
ADELCO ELEKTRONIK GMBH
Description
COMPONENT NAME AND QUANTITY: 2 TRANSISTOR
CURRENT RATING PER CHARACTERISTIC: 50.00 MILLIAMPERES MAXIMUM COLLECTOR CURRENT, DC ALL TRANSISTOR
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: TO-71
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.230 INCHES MAXIMUM
OVERALL LENGTH: 0.210 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 250.0 MILLIWATTS MAXIMUM TOTAL POWER DISSIPATION ALL TRANSISTOR
SEMICONDUCTOR MATERIAL: SILICON ALL TRANSISTOR
SPECIAL FEATURES: ALL TRANSISTOR JUNCTION PATTERN ARRANGEMENT: PNP
SPECIFICATION/STANDARD DATA: 80131-RELEASE5128 PROFESSIONAL/INDUSTRIAL ASSOCIATION SPECIFICATION
TERMINAL CIRCLE DIAMETER: 0.100 INCHES NOMINAL
TERMINAL LENGTH: 0.500 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 8 UNINSULATED WIRE LEAD
TRANSFER RATIO: 150.0 MAXIMUM SMALL-SIGNAL SHORT-CIRCUIT FORWARD CURRENT TRANSFER RATIO, COMMON-EMITTER ALL TRANSISTOR
VOLTAGE RATING IN
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1902-0006
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961008510038
NSN
5961-00-851-0038
MFG
AVAGO TECHNOLOGIES U.S. INC. DIV AVAGO TECHNOLOGIES
Description
CURRENT RATING PER CHARACTERISTIC: 5.00 MILLIAMPERES MAXIMUM MAXIMUM REVERSE SURGE CURRENT
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: GLASS
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: DO-7
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.094 INCHES NOMINAL
OVERALL LENGTH: 0.266 INCHES NOMINAL
POWER RATING PER CHARACTERISTIC: 0.4 WATTS MAXIMUM TOTAL DEVICE DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL LENGTH: 1.000 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 7.0 MAXIMUM NOMINAL REGULATOR VOLTAGE
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DZ70301F
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961008510038
NSN
5961-00-851-0038
MFG
MICROSEMI CORP.-SCOTTSDALE DBA MICROSEMI
Description
CURRENT RATING PER CHARACTERISTIC: 5.00 MILLIAMPERES MAXIMUM MAXIMUM REVERSE SURGE CURRENT
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: GLASS
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: DO-7
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.094 INCHES NOMINAL
OVERALL LENGTH: 0.266 INCHES NOMINAL
POWER RATING PER CHARACTERISTIC: 0.4 WATTS MAXIMUM TOTAL DEVICE DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL LENGTH: 1.000 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 7.0 MAXIMUM NOMINAL REGULATOR VOLTAGE
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SZ50592
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961008510038
NSN
5961-00-851-0038
MFG
FREESCALE SEMICONDUCTOR INC.
Description
CURRENT RATING PER CHARACTERISTIC: 5.00 MILLIAMPERES MAXIMUM MAXIMUM REVERSE SURGE CURRENT
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: GLASS
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: DO-7
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.094 INCHES NOMINAL
OVERALL LENGTH: 0.266 INCHES NOMINAL
POWER RATING PER CHARACTERISTIC: 0.4 WATTS MAXIMUM TOTAL DEVICE DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL LENGTH: 1.000 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 7.0 MAXIMUM NOMINAL REGULATOR VOLTAGE
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352-0479-010
TRANSISTOR
NSN, MFG P/N
5961008510178
NSN
5961-00-851-0178
MFG
ROCKWELL COLLINS INC. DBA GOVERNMENT SYSTEMS DIV GOVERNMENT SYSTEMS
Description
CURRENT RATING PER CHARACTERISTIC: 1.00 MICROAMPERES MAXIMUM COLLECTOR CUTOFF CURRENT, DC, EMITTER OPEN
ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE: COLLECTOR
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: JUNCTION CONTACT
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 200.0 DEG CELSIUS JUNCTION
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.320 INCHES NOMINAL
OVERALL LENGTH: 0.250 INCHES NOMINAL
POWER RATING PER CHARACTERISTIC: 1.0 WATTS MAXIMUM COLLECTOR POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: NPN
TERMINAL CIRCLE DIAMETER: 0.200 INCHES NOMINAL
TERMINAL LENGTH: 1.500 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 3 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 90.0 MAXIMUM COLLECTOR TO EMITTER VOLTAGE, DC AND 7.0 MAXIMUM EMITTER TO BASE VOLTAGE, INSTANTANEOUS
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38282
TRANSISTOR
NSN, MFG P/N
5961008510178
NSN
5961-00-851-0178
MFG
INTERSIL CORPORATION
Description
CURRENT RATING PER CHARACTERISTIC: 1.00 MICROAMPERES MAXIMUM COLLECTOR CUTOFF CURRENT, DC, EMITTER OPEN
ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE: COLLECTOR
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: JUNCTION CONTACT
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 200.0 DEG CELSIUS JUNCTION
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.320 INCHES NOMINAL
OVERALL LENGTH: 0.250 INCHES NOMINAL
POWER RATING PER CHARACTERISTIC: 1.0 WATTS MAXIMUM COLLECTOR POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: NPN
TERMINAL CIRCLE DIAMETER: 0.200 INCHES NOMINAL
TERMINAL LENGTH: 1.500 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 3 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 90.0 MAXIMUM COLLECTOR TO EMITTER VOLTAGE, DC AND 7.0 MAXIMUM EMITTER TO BASE VOLTAGE, INSTANTANEOUS
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1N317
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961008510435
NSN
5961-00-851-0435
MFG
ELECTRONIC INDUSTRIES ASSOCIATION
Description
CURRENT RATING PER CHARACTERISTIC: 0.25 AMPERES MAXIMUM AVERAGE FORWARD CURRENT AVERAGED OVER A FULL 60-HZ CYCLE
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: GLASS AND METAL
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 100.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.360 INCHES MINIMUM AND 0.400 INCHES MAXIMUM
OVERALL LENGTH: 0.360 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
SPECIFICATION/STANDARD DATA: 80131-RELEASE1630 PROFESSIONAL/INDUSTRIAL ASSOCIATION SPECIFICATION
TERMINAL LENGTH: 1.000 INCHES MINIMUM AND 1.620 INCHES MAXIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 100.0 MAXIMUM REVERSE VOLTAGE, PEAK
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TM17A
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961008510558
NSN
5961-00-851-0558
MFG
GILBERT ENGINEERING CO INC/INCON SUB OF TRANSITRON ELECTRONIC CORP
Description
CURRENT RATING PER CHARACTERISTIC: 3.00 AMPERES MAXIMUM AVERAGE FORWARD CURRENT AVERAGED OVER A FULL 60-HZ CYCLE
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: GLASS AND METAL
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 150.0 DEG CELSIUS JUNCTION
MOUNTING FACILITY QUANTITY: 1
MOUNTING METHOD: THREADED STUD
NOMINAL THREAD SIZE: 0.190 INCHES
OVERALL LENGTH: 0.405 INCHES MAXIMUM
OVERALL WIDTH ACROSS FLATS: 0.424 INCHES MINIMUM AND 0.437 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 1 TAB, SOLDER LUG AND 1 THREADED STUD
THREAD SERIES DESIGNATOR: UNF
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 100.0 MAXIMUM NOMINAL REGULATOR VOLTAGE
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V39
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961008510561
NSN
5961-00-851-0561
MFG
TRW ELECTRONICS AND DEFENSE SECTOR RF DEVICES
Description
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: GLASS
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.104 INCHES MAXIMUM
OVERALL LENGTH: 0.300 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 500.0 MILLIWATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL LENGTH: 1.000 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 25.0 MAXIMUM REVERSE VOLTAGE, PEAK
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194179-1
TRANSISTOR
NSN, MFG P/N
5961008510732
NSN
5961-00-851-0732
MFG
RAYTHEON COMPANY DBA RAYTHEON
Description
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: JUNCTION CONTACT
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 200.0 DEG CELSIUS JUNCTION
MOUNTING FACILITY QUANTITY: 1
MOUNTING METHOD: THREADED STUD
NOMINAL THREAD SIZE: 0.250 INCHES
OVERALL DIAMETER: 0.600 INCHES MAXIMUM
OVERALL LENGTH: 0.431 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 85.0 WATTS MAXIMUM TOTAL DEVICE DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: NPN
TERMINAL TYPE AND QUANTITY: 1 WIRE HOOK AND 2 TAB, SOLDER LUG
THREAD SERIES DESIGNATOR: UNF
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 120.0 MAXIMUM COLLECTOR TO BASE VOLTAGE/STATIC/EMITTER OPEN AND 120.0 MAXIMUM COLLECTOR TO EMITTER REVERSE VOLTAGE AND 100.0 MAXIMUM COLLECTOR TO EMITTER VOLTAGE/STATIC/BASE OPEN AND 6.0 MAXIMUM EMITTER TO BASE VOLTAGE, STATIC, COLLECTOR OPEN
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STC1504
TRANSISTOR
NSN, MFG P/N
5961008510732
NSN
5961-00-851-0732
MFG
SILICON TRANSISTOR CORP SUB OF BBF INC
Description
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: JUNCTION CONTACT
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 200.0 DEG CELSIUS JUNCTION
MOUNTING FACILITY QUANTITY: 1
MOUNTING METHOD: THREADED STUD
NOMINAL THREAD SIZE: 0.250 INCHES
OVERALL DIAMETER: 0.600 INCHES MAXIMUM
OVERALL LENGTH: 0.431 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 85.0 WATTS MAXIMUM TOTAL DEVICE DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: NPN
TERMINAL TYPE AND QUANTITY: 1 WIRE HOOK AND 2 TAB, SOLDER LUG
THREAD SERIES DESIGNATOR: UNF
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 120.0 MAXIMUM COLLECTOR TO BASE VOLTAGE/STATIC/EMITTER OPEN AND 120.0 MAXIMUM COLLECTOR TO EMITTER REVERSE VOLTAGE AND 100.0 MAXIMUM COLLECTOR TO EMITTER VOLTAGE/STATIC/BASE OPEN AND 6.0 MAXIMUM EMITTER TO BASE VOLTAGE, STATIC, COLLECTOR OPEN
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SV3140A
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961008510736
NSN
5961-00-851-0736
MFG
SEMITRONICS CORP
Description
CURRENT RATING PER CHARACTERISTIC: 10.00 MILLIAMPERES MAXIMUM MAXIMUM REVERSE SURGE CURRENT
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: GLASS
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 85.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.313 INCHES MAXIMUM
OVERALL LENGTH: 0.688 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL LENGTH: 1.000 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 1.2 MAXIMUM NOMINAL REGULATOR VOLTAGE
Related Searches:
C084509-001
TRANSISTOR
NSN, MFG P/N
5961008511008
NSN
5961-00-851-1008
MFG
GYRODYNE CO OF AMERICA INC
Description
CURRENT RATING PER CHARACTERISTIC: 120.00 AMPERES MAXIMUM COLLECTOR CURRENT, DC
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: JUNCTION CONTACT
MOUNTING FACILITY QUANTITY: 1
MOUNTING METHOD: THREADED STUD
NOMINAL THREAD SIZE: 0.190 INCHES
OVERALL LENGTH: 0.345 INCHES MINIMUM AND 0.400 INCHES MAXIMUM
OVERALL WIDTH ACROSS FLATS: 0.427 INCHES MINIMUM AND 0.437 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 30.0 WATTS MAXIMUM COLLECTOR POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: NPN
TERMINAL TYPE AND QUANTITY: 1 WIRE HOOK AND 2 TAB, SOLDER LUG
THREAD SERIES DESIGNATOR: UNF
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 100.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-BASE, EMITTER OPEN AND 80.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-EMITTER, BASE OPEN AND 8.0 MAXIMUM BREAKDOWN VOLTAGE, EMITTER-TO-BASE, COLLECTOR OPEN
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MHT6413
TRANSISTOR
NSN, MFG P/N
5961008511008
NSN
5961-00-851-1008
MFG
SOLITRON DEVICES INC.
Description
CURRENT RATING PER CHARACTERISTIC: 120.00 AMPERES MAXIMUM COLLECTOR CURRENT, DC
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: JUNCTION CONTACT
MOUNTING FACILITY QUANTITY: 1
MOUNTING METHOD: THREADED STUD
NOMINAL THREAD SIZE: 0.190 INCHES
OVERALL LENGTH: 0.345 INCHES MINIMUM AND 0.400 INCHES MAXIMUM
OVERALL WIDTH ACROSS FLATS: 0.427 INCHES MINIMUM AND 0.437 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 30.0 WATTS MAXIMUM COLLECTOR POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: NPN
TERMINAL TYPE AND QUANTITY: 1 WIRE HOOK AND 2 TAB, SOLDER LUG
THREAD SERIES DESIGNATOR: UNF
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 100.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-BASE, EMITTER OPEN AND 80.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-EMITTER, BASE OPEN AND 8.0 MAXIMUM BREAKDOWN VOLTAGE, EMITTER-TO-BASE, COLLECTOR OPEN
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2N596
TRANSISTOR
NSN, MFG P/N
5961008511470
NSN
5961-00-851-1470
MFG
AMERICAN MICROSEMICONDUCTOR INC
Description
CURRENT RATING PER CHARACTERISTIC: 5.00 MICROAMPERES MAXIMUM COLLECTOR CUTOFF CURRENT, DC, EMITTER OPEN
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: JUNCTION CONTACT
MOUNTING METHOD: TERMINAL
OVERALL LENGTH: 0.240 INCHES MINIMUM AND 0.260 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 100.0 MILLIWATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: GERMANIUM
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: NPN
TERMINAL CIRCLE DIAMETER: 0.200 INCHES NOMINAL
TERMINAL LENGTH: 1.500 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 3 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 10.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-BASE, EMITTER OPEN
Related Searches:
4192800-329
TRANSISTOR
NSN, MFG P/N
5961008511470
NSN
5961-00-851-1470
MFG
RAYTHEON COMPANY DBA RAYTHEON
Description
CURRENT RATING PER CHARACTERISTIC: 5.00 MICROAMPERES MAXIMUM COLLECTOR CUTOFF CURRENT, DC, EMITTER OPEN
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: JUNCTION CONTACT
MOUNTING METHOD: TERMINAL
OVERALL LENGTH: 0.240 INCHES MINIMUM AND 0.260 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 100.0 MILLIWATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: GERMANIUM
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: NPN
TERMINAL CIRCLE DIAMETER: 0.200 INCHES NOMINAL
TERMINAL LENGTH: 1.500 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 3 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 10.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-BASE, EMITTER OPEN
