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5961-00-856-7402
20 Products
10477+001
TRANSISTOR
NSN, MFG P/N
5961008567402
NSN
5961-00-856-7402
MFG
ASTRONAUTICS CORPORATION OF AMERICA
Description
CURRENT RATING PER CHARACTERISTIC: 10.00 MILLIAMPERES MAXIMUM COLLECTOR CURRENT, DC
ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE: COLLECTOR
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: JUNCTION CONTACT
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.219 INCHES NOMINAL
OVERALL LENGTH: 0.188 INCHES NOMINAL
POWER RATING PER CHARACTERISTIC: 200.0 MILLIWATTS MAXIMUM COLLECTOR POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: NPN
SPECIFICATION/STANDARD DATA: 80131-RELEASE4723 PROFESSIONAL/INDUSTRIAL ASSOCIATION SPECIFICATION
TERMINAL CIRCLE DIAMETER: 0.100 INCHES NOMINAL
TERMINAL LENGTH: 0.500 INCHES NOMINAL
TERMINAL TYPE AND QUANTITY: 4 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 20.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-BASE, EMITTER OPEN AND 10.0 MAXIMUM BREAKDOWN VOLTAGE, EMITTER-TO-BASE, COLLECTOR OPEN
Related Searches:
153-0163
SEMICONDUCTOR DEVICE,THYRISTOR
NSN, MFG P/N
5961008566156
NSN
5961-00-856-6156
153-0163
SEMICONDUCTOR DEVICE,THYRISTOR
NSN, MFG P/N
5961008566156
NSN
5961-00-856-6156
MFG
HARSCO CORP BMY-COMBAT SYSTEMS DIV
Description
CURRENT RATING PER CHARACTERISTIC: 5.00 AMPERES MAXIMUM COLLECTOR CURRENT, DC
INCLOSURE MATERIAL: METAL
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 100.0 DEG CELSIUS JUNCTION
MOUNTING FACILITY QUANTITY: 1
MOUNTING METHOD: THREADED STUD
NOMINAL THREAD SIZE: 0.190 INCHES
OVERALL LENGTH: 0.310 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 500.0 MILLIWATTS MAXIMUM PEAK GATE POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPECIFICATION/STANDARD DATA: 80131-RELEASE5221 PROFESSIONAL/INDUSTRIAL ASSOCIATION SPECIFICATION
TERMINAL TYPE AND QUANTITY: 2 TAB, SOLDER LUG AND 1 THREADED STUD
THREAD SERIES DESIGNATOR: UNF
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 400.0 MAXIMUM BREAKOVER VOLTAGE, DC
Related Searches:
1884-0022
SEMICONDUCTOR DEVICE,THYRISTOR
NSN, MFG P/N
5961008566156
NSN
5961-00-856-6156
1884-0022
SEMICONDUCTOR DEVICE,THYRISTOR
NSN, MFG P/N
5961008566156
NSN
5961-00-856-6156
MFG
AVAGO TECHNOLOGIES U.S. INC. DIV AVAGO TECHNOLOGIES
Description
CURRENT RATING PER CHARACTERISTIC: 5.00 AMPERES MAXIMUM COLLECTOR CURRENT, DC
INCLOSURE MATERIAL: METAL
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 100.0 DEG CELSIUS JUNCTION
MOUNTING FACILITY QUANTITY: 1
MOUNTING METHOD: THREADED STUD
NOMINAL THREAD SIZE: 0.190 INCHES
OVERALL LENGTH: 0.310 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 500.0 MILLIWATTS MAXIMUM PEAK GATE POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPECIFICATION/STANDARD DATA: 80131-RELEASE5221 PROFESSIONAL/INDUSTRIAL ASSOCIATION SPECIFICATION
TERMINAL TYPE AND QUANTITY: 2 TAB, SOLDER LUG AND 1 THREADED STUD
THREAD SERIES DESIGNATOR: UNF
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 400.0 MAXIMUM BREAKOVER VOLTAGE, DC
Related Searches:
2N4172
SEMICONDUCTOR DEVICE,THYRISTOR
NSN, MFG P/N
5961008566156
NSN
5961-00-856-6156
2N4172
SEMICONDUCTOR DEVICE,THYRISTOR
NSN, MFG P/N
5961008566156
NSN
5961-00-856-6156
MFG
ELECTRONIC INDUSTRIES ASSOCIATION
Description
CURRENT RATING PER CHARACTERISTIC: 5.00 AMPERES MAXIMUM COLLECTOR CURRENT, DC
INCLOSURE MATERIAL: METAL
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 100.0 DEG CELSIUS JUNCTION
MOUNTING FACILITY QUANTITY: 1
MOUNTING METHOD: THREADED STUD
NOMINAL THREAD SIZE: 0.190 INCHES
OVERALL LENGTH: 0.310 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 500.0 MILLIWATTS MAXIMUM PEAK GATE POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPECIFICATION/STANDARD DATA: 80131-RELEASE5221 PROFESSIONAL/INDUSTRIAL ASSOCIATION SPECIFICATION
TERMINAL TYPE AND QUANTITY: 2 TAB, SOLDER LUG AND 1 THREADED STUD
THREAD SERIES DESIGNATOR: UNF
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 400.0 MAXIMUM BREAKOVER VOLTAGE, DC
Related Searches:
3718423-1
SEMICONDUCTOR DEVICE,THYRISTOR
NSN, MFG P/N
5961008566156
NSN
5961-00-856-6156
3718423-1
SEMICONDUCTOR DEVICE,THYRISTOR
NSN, MFG P/N
5961008566156
NSN
5961-00-856-6156
MFG
HONEYWELL INTL DBA HONEYWELL DIV BUSINESS AND GENERAL AVIATION
Description
CURRENT RATING PER CHARACTERISTIC: 5.00 AMPERES MAXIMUM COLLECTOR CURRENT, DC
INCLOSURE MATERIAL: METAL
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 100.0 DEG CELSIUS JUNCTION
MOUNTING FACILITY QUANTITY: 1
MOUNTING METHOD: THREADED STUD
NOMINAL THREAD SIZE: 0.190 INCHES
OVERALL LENGTH: 0.310 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 500.0 MILLIWATTS MAXIMUM PEAK GATE POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPECIFICATION/STANDARD DATA: 80131-RELEASE5221 PROFESSIONAL/INDUSTRIAL ASSOCIATION SPECIFICATION
TERMINAL TYPE AND QUANTITY: 2 TAB, SOLDER LUG AND 1 THREADED STUD
THREAD SERIES DESIGNATOR: UNF
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 400.0 MAXIMUM BREAKOVER VOLTAGE, DC
Related Searches:
MCR2305-6
SEMICONDUCTOR DEVICE,THYRISTOR
NSN, MFG P/N
5961008566156
NSN
5961-00-856-6156
MCR2305-6
SEMICONDUCTOR DEVICE,THYRISTOR
NSN, MFG P/N
5961008566156
NSN
5961-00-856-6156
MFG
FREESCALE SEMICONDUCTOR INC.
Description
CURRENT RATING PER CHARACTERISTIC: 5.00 AMPERES MAXIMUM COLLECTOR CURRENT, DC
INCLOSURE MATERIAL: METAL
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 100.0 DEG CELSIUS JUNCTION
MOUNTING FACILITY QUANTITY: 1
MOUNTING METHOD: THREADED STUD
NOMINAL THREAD SIZE: 0.190 INCHES
OVERALL LENGTH: 0.310 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 500.0 MILLIWATTS MAXIMUM PEAK GATE POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPECIFICATION/STANDARD DATA: 80131-RELEASE5221 PROFESSIONAL/INDUSTRIAL ASSOCIATION SPECIFICATION
TERMINAL TYPE AND QUANTITY: 2 TAB, SOLDER LUG AND 1 THREADED STUD
THREAD SERIES DESIGNATOR: UNF
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 400.0 MAXIMUM BREAKOVER VOLTAGE, DC
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4036887P19
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961008566305
NSN
5961-00-856-6305
4036887P19
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961008566305
NSN
5961-00-856-6305
MFG
GENERAL ELECTRIC CO MOBILE COMMUNICATIONS BUSINESS DIV
Description
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: GLASS
SEMICONDUCTOR MATERIAL: SILICON
Related Searches:
19A115775P1
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961008566308
NSN
5961-00-856-6308
19A115775P1
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961008566308
NSN
5961-00-856-6308
MFG
GENERAL ELECTRIC CO MOBILE COMMUNICATIONS BUSINESS DIV
Description
DESIGN CONTROL REFERENCE: 19A115775P1
FEATURES PROVIDED: HERMETICALLY SEALED CASE
MANUFACTURERS CODE: 08771
MOUNTING METHOD: TERMINAL
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
THE MANUFACTURERS DATA:
Related Searches:
EJ500
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961008566489
NSN
5961-00-856-6489
MFG
ELECTRONIC DEVICES INC DBA E D I
Description
CURRENT RATING PER CHARACTERISTIC: 200.00 MILLIAMPERES MAXIMUM AVERAGE FORWARD CURRENT AVERAGED OVER A FULL 60-HZ CYCLE
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: GLASS AND METAL
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 150.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.375 INCHES NOMINAL
OVERALL LENGTH: 1.000 INCHES NOMINAL
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL LENGTH: 1.000 INCHES NOMINAL
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 5000.0 MAXIMUM REVERSE VOLTAGE, PEAK
Related Searches:
195-10
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961008566615
NSN
5961-00-856-6615
MFG
FREESCALE SEMICONDUCTOR INC.
Description
DESIGN CONTROL REFERENCE: 195-10
FEATURES PROVIDED: HERMETICALLY SEALED CASE
MANUFACTURERS CODE: 04713
MOUNTING METHOD: TERMINAL
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
THE MANUFACTURERS DATA:
Related Searches:
938D392-10
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961008566615
NSN
5961-00-856-6615
938D392-10
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961008566615
NSN
5961-00-856-6615
MFG
HAMILTON SUNDSTRAND CORPORATION
Description
DESIGN CONTROL REFERENCE: 195-10
FEATURES PROVIDED: HERMETICALLY SEALED CASE
MANUFACTURERS CODE: 04713
MOUNTING METHOD: TERMINAL
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
THE MANUFACTURERS DATA:
Related Searches:
CD32466
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961008566615
NSN
5961-00-856-6615
MFG
TELCOM SEMICONDUCTOR INC
Description
DESIGN CONTROL REFERENCE: 195-10
FEATURES PROVIDED: HERMETICALLY SEALED CASE
MANUFACTURERS CODE: 04713
MOUNTING METHOD: TERMINAL
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
THE MANUFACTURERS DATA:
Related Searches:
G4387
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961008566615
NSN
5961-00-856-6615
MFG
N A P SMD TECHNOLOGY INC
Description
DESIGN CONTROL REFERENCE: 195-10
FEATURES PROVIDED: HERMETICALLY SEALED CASE
MANUFACTURERS CODE: 04713
MOUNTING METHOD: TERMINAL
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
THE MANUFACTURERS DATA:
Related Searches:
PS8056
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961008566615
NSN
5961-00-856-6615
MFG
TRW ELECTRONICS AND DEFENSE SECTOR RF DEVICES
Description
DESIGN CONTROL REFERENCE: 195-10
FEATURES PROVIDED: HERMETICALLY SEALED CASE
MANUFACTURERS CODE: 04713
MOUNTING METHOD: TERMINAL
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
THE MANUFACTURERS DATA:
Related Searches:
320C040G23
RECTIFIER,SEMICONDUCTOR DEVICE
NSN, MFG P/N
5961008566630
NSN
5961-00-856-6630
320C040G23
RECTIFIER,SEMICONDUCTOR DEVICE
NSN, MFG P/N
5961008566630
NSN
5961-00-856-6630
MFG
WESTINGHOUSE ELECTRIC CORP SEMICONDUCTOR DIV
Description
MATERIAL: SILICON
Related Searches:
BR26
RECTIFIER,SEMICONDUCTOR DEVICE
NSN, MFG P/N
5961008567317
NSN
5961-00-856-7317
MFG
DIODES INC
Description
CIRCUIT CONNECTION STYLE DESIGNATOR: 7 BRIDGE 1 PHASE
MATERIAL: SILICON
OVERALL HEIGHT: 0.312 INCHES NOMINAL
OVERALL LENGTH: 0.430 INCHES NOMINAL
OVERALL WIDTH: 0.312 INCHES NOMINAL
TERMINAL TYPE AND QUANTITY: 4 WIRE LEAD
Related Searches:
1N3274
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961008567363
NSN
5961-00-856-7363
MFG
POWEREX INC
Description
CURRENT RATING PER CHARACTERISTIC: 150.00 AMPERES MAXIMUM AVERAGE FORWARD CURRENT AVERAGED OVER A FULL 60-HZ CYCLE
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 190.0 DEG CELSIUS JUNCTION
MOUNTING FACILITY QUANTITY: 1
MOUNTING METHOD: THREADED STUD
NOMINAL THREAD SIZE: 0.750 INCHES
OVERALL LENGTH: 2.250 INCHES MAXIMUM
OVERALL WIDTH ACROSS FLATS: 1.443 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
SPECIFICATION/STANDARD DATA: 80131-RELEASE4127 PROFESSIONAL/INDUSTRIAL ASSOCIATION SPECIFICATION
TERMINAL TYPE AND QUANTITY: 1 TAB, SOLDER LUG AND 1 THREADED STUD
THREAD SERIES DESIGNATOR: UNF
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 1000.2 MAXIMUM REVERSE VOLTAGE, PEAK
Related Searches:
RELEASE 4127
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961008567363
NSN
5961-00-856-7363
RELEASE 4127
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961008567363
NSN
5961-00-856-7363
MFG
ELECTRONIC INDUSTRIES ASSOCIATION
Description
CURRENT RATING PER CHARACTERISTIC: 150.00 AMPERES MAXIMUM AVERAGE FORWARD CURRENT AVERAGED OVER A FULL 60-HZ CYCLE
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 190.0 DEG CELSIUS JUNCTION
MOUNTING FACILITY QUANTITY: 1
MOUNTING METHOD: THREADED STUD
NOMINAL THREAD SIZE: 0.750 INCHES
OVERALL LENGTH: 2.250 INCHES MAXIMUM
OVERALL WIDTH ACROSS FLATS: 1.443 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
SPECIFICATION/STANDARD DATA: 80131-RELEASE4127 PROFESSIONAL/INDUSTRIAL ASSOCIATION SPECIFICATION
TERMINAL TYPE AND QUANTITY: 1 TAB, SOLDER LUG AND 1 THREADED STUD
THREAD SERIES DESIGNATOR: UNF
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 1000.2 MAXIMUM REVERSE VOLTAGE, PEAK
Related Searches:
A538-210REVA
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961008567369
NSN
5961-00-856-7369
A538-210REVA
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961008567369
NSN
5961-00-856-7369
MFG
KOLLMORGEN CORPORATION DBA KOLLMORGEN ELECTRO OPTICAL A DANAHER COMPANY.
Description
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: GLASS AND METAL
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.292 INCHES MINIMUM AND 0.296 INCHES MAXIMUM
OVERALL LENGTH: 0.800 INCHES MINIMUM AND 0.840 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL LENGTH: 0.180 INCHES MINIMUM AND 0.190 INCHES MAXIMUM
TERMINAL TYPE AND QUANTITY: 1 CASE AND 1 PIN
Related Searches:
MA4128
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961008567369
NSN
5961-00-856-7369
MFG
M/A-COM INC. DBA TYCO ELECTRONIC WIRELESS SYSTEM
Description
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: GLASS AND METAL
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.292 INCHES MINIMUM AND 0.296 INCHES MAXIMUM
OVERALL LENGTH: 0.800 INCHES MINIMUM AND 0.840 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL LENGTH: 0.180 INCHES MINIMUM AND 0.190 INCHES MAXIMUM
TERMINAL TYPE AND QUANTITY: 1 CASE AND 1 PIN
