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5961-00-887-5614

20 Products

1N5654A

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961008875614

NSN

5961-00-887-5614

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1N5654A

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961008875614

NSN

5961-00-887-5614

MFG

ELECTRONIC INDUSTRIES ASSOCIATION

Description

CURRENT RATING PER CHARACTERISTIC: 5.00 MILLIAMPERES MAXIMUM REVERSE CURRENT, DC
DESIGN CONTROL REFERENCE: 1N5654A
FEATURES PROVIDED: HERMETICALLY SEALED CASE
III END ITEM IDENTIFICATION: AUTOMATED RADAR TERMINAL SYSTEM 3A (ARTS3A)
INCLOSURE MATERIAL: GLASS
MANUFACTURERS CODE: 80131
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 200.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.235 INCHES MAXIMUM
OVERALL LENGTH: 0.357 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL CIRCLE DIAMETER: 0.030 INCHES NOMINAL
TERMINAL LENGTH: 1.000 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
THE MANUFACTURERS DATA:
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 64.1 NOMINAL REVERSE VOLTAGE, INSTANTANEOUS

352-9884-000

RETAINER,SEMICONDUCTOR DEVICE

NSN, MFG P/N

5961008861686

NSN

5961-00-886-1686

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352-9884-000

RETAINER,SEMICONDUCTOR DEVICE

NSN, MFG P/N

5961008861686

NSN

5961-00-886-1686

MFG

ROCKWELL COLLINS INC. DIV GOVERNMENT SYSTEMS - DALLAS

Description

ACCOMMODATED ITEM SECURING DEVICE TYPE: FRICTION FASTENER
MATERIAL: COPPER ALLOY AND PLASTIC POLYAMIDE AND COPPER ALLOY
MATERIAL DOCUMENT AND CLASSIFICATION: QQ-C-530 FED SPEC SINGLE MATERIAL RESPONSE
MOUNTING FACILITY TYPE AND QUANTITY: 1 THREADED HOLE SINGLE MOUNTING FACILITY
NOMINAL THREAD SIZE: 0.086 INCHES SINGLE MOUNTING FACILITY
OVERALL HEIGHT: 0.295 INCHES NOMINAL
OVERALL LENGTH: 0.375 INCHES NOMINAL
OVERALL WIDTH: 0.370 INCHES NOMINAL
STYLE DESIGNATOR: 12C IRREGULAR
SURFACE TREATMENT: CADMIUM
SURFACE TREATMENT DOCUMENT AND CLASSIFICATION: QQ-P-416,TY 2,CL A FED SPEC SINGLE TREATMENT RESPONSE
THREAD CLASS: 2B SINGLE MOUNTING FACILITY
THREAD QUANTITY PER INCH: 56 SINGLE MOUNTING FACILITY
THREAD SERIES DESIGNATOR: UNC SINGLE MOUNTING FACILITY

TXB2P032-037-38

RETAINER,SEMICONDUCTOR DEVICE

NSN, MFG P/N

5961008861686

NSN

5961-00-886-1686

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TXB2P032-037-38

RETAINER,SEMICONDUCTOR DEVICE

NSN, MFG P/N

5961008861686

NSN

5961-00-886-1686

MFG

CTS ELECTRONIC COMPONENTS CALIFORNIA INC DBA IERC DIV CTS ELECTRONIC COMPONENTS

Description

ACCOMMODATED ITEM SECURING DEVICE TYPE: FRICTION FASTENER
MATERIAL: COPPER ALLOY AND PLASTIC POLYAMIDE AND COPPER ALLOY
MATERIAL DOCUMENT AND CLASSIFICATION: QQ-C-530 FED SPEC SINGLE MATERIAL RESPONSE
MOUNTING FACILITY TYPE AND QUANTITY: 1 THREADED HOLE SINGLE MOUNTING FACILITY
NOMINAL THREAD SIZE: 0.086 INCHES SINGLE MOUNTING FACILITY
OVERALL HEIGHT: 0.295 INCHES NOMINAL
OVERALL LENGTH: 0.375 INCHES NOMINAL
OVERALL WIDTH: 0.370 INCHES NOMINAL
STYLE DESIGNATOR: 12C IRREGULAR
SURFACE TREATMENT: CADMIUM
SURFACE TREATMENT DOCUMENT AND CLASSIFICATION: QQ-P-416,TY 2,CL A FED SPEC SINGLE TREATMENT RESPONSE
THREAD CLASS: 2B SINGLE MOUNTING FACILITY
THREAD QUANTITY PER INCH: 56 SINGLE MOUNTING FACILITY
THREAD SERIES DESIGNATOR: UNC SINGLE MOUNTING FACILITY

543-4481-002

RETAINER,SEMICONDUCTOR DEVICE

NSN, MFG P/N

5961008863159

NSN

5961-00-886-3159

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543-4481-002

RETAINER,SEMICONDUCTOR DEVICE

NSN, MFG P/N

5961008863159

NSN

5961-00-886-3159

MFG

ROCKWELL COLLINS INC. DBA GOVERNMENT SYSTEMS DIV GOVERNMENT SYSTEMS

576C951P02

SEMICONDUCTOR DEVICES,UNITIZED

NSN, MFG P/N

5961008865419

NSN

5961-00-886-5419

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576C951P02

SEMICONDUCTOR DEVICES,UNITIZED

NSN, MFG P/N

5961008865419

NSN

5961-00-886-5419

MFG

GENERAL ELECTRIC COMPANY DBA GE DIV GE - AVIATION

CA19147

SEMICONDUCTOR DEVICES,UNITIZED

NSN, MFG P/N

5961008865419

NSN

5961-00-886-5419

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CA19147

SEMICONDUCTOR DEVICES,UNITIZED

NSN, MFG P/N

5961008865419

NSN

5961-00-886-5419

MFG

TELCOM SEMICONDUCTOR INC

2297636G1

SEMICONDUCTOR DEVICE ASSEMBLY

NSN, MFG P/N

5961008868282

NSN

5961-00-886-8282

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2297636G1

SEMICONDUCTOR DEVICE ASSEMBLY

NSN, MFG P/N

5961008868282

NSN

5961-00-886-8282

MFG

NAVAIR AND NAVSEA MANAGED ORIGINAL DESIGN ACTIVITY DWG NOT MATERIAL/PARTS SUPPLIER

Description

DESIGN CONTROL REFERENCE: 2297636G1
MANUFACTURERS CODE: 10001
REFERENCE NUMBER DIFFERENTIATING CHARACTERISTICS: AS DIFFERENTIATED BY SPECIAL TESTFEATURES
SPECIAL TEST FEATURES: NAVORD OD36190

00606296005813

DIODE

NSN, MFG P/N

5961008874060

NSN

5961-00-887-4060

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00606296005813

DIODE

NSN, MFG P/N

5961008874060

NSN

5961-00-887-4060

MFG

THE TECHNICAL MATERIAL CORPORATION DBA T M C

C01

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961008874139

NSN

5961-00-887-4139

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C01

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961008874139

NSN

5961-00-887-4139

MFG

TEXAS INSTRUMENTS INCORPORATED DBA TEXAS INSTRUMENTS DIV SEMICONDUCTOR GROUP

Description

DESIGN CONTROL REFERENCE: C01
FEATURES PROVIDED: HERMETICALLY SEALED CASE
MANUFACTURERS CODE: 01295
MOUNTING METHOD: TERMINAL
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
THE MANUFACTURERS DATA:

PS722

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961008874140

NSN

5961-00-887-4140

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PS722

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961008874140

NSN

5961-00-887-4140

MFG

TRW ELECTRONICS AND DEFENSE SECTOR RF DEVICES

Description

DESIGN CONTROL REFERENCE: PS722
FEATURES PROVIDED: HERMETICALLY SEALED CASE
MANUFACTURERS CODE: 01281
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
THE MANUFACTURERS DATA:

1N2983B

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961008874444

NSN

5961-00-887-4444

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1N2983B

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961008874444

NSN

5961-00-887-4444

MFG

ELECTRONIC INDUSTRIES ASSOCIATION

Description

CURRENT RATING PER CHARACTERISTIC: 130.00 MILLIAMPERES MAXIMUM MAXIMUM REVERSE SURGE CURRENT
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
MOUNTING FACILITY QUANTITY: 1
MOUNTING METHOD: THREADED STUD
NOMINAL THREAD SIZE: 0.190 INCHES
OVERALL DIAMETER: 0.424 INCHES MAXIMUM
OVERALL LENGTH: 0.405 INCHES MAXIMUM
OVERALL WIDTH ACROSS FLATS: 0.424 INCHES MINIMUM AND 0.437 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 10.0 WATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPECIFICATION/STANDARD DATA: 80131-RELEASE3398 PROFESSIONAL/INDUSTRIAL ASSOCIATION SPECIFICATION
TERMINAL TYPE AND QUANTITY: 1 THREADED STUD AND 1 TAB, SOLDER LUG
THREAD SERIES DESIGNATOR: UNF
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 19.0 MAXIMUM NOMINAL REGULATOR VOLTAGE

CD34921

SEMICONDUCTOR DEVIC

NSN, MFG P/N

5961008874525

NSN

5961-00-887-4525

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CD34921

SEMICONDUCTOR DEVIC

NSN, MFG P/N

5961008874525

NSN

5961-00-887-4525

MFG

TELCOM SEMICONDUCTOR INC

4JX11B667

TRANSISTOR

NSN, MFG P/N

5961008874732

NSN

5961-00-887-4732

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4JX11B667

TRANSISTOR

NSN, MFG P/N

5961008874732

NSN

5961-00-887-4732

MFG

GENERAL ELECTRIC CO SEMI-CONDUCTOR PRODUCTS DEPT

Description

CURRENT RATING PER CHARACTERISTIC: 0.15 AMPERES MAXIMUM COLLECTOR CURRENT, DC
ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE: COLLECTOR
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: JUNCTION CONTACT
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: TO-18
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.208 INCHES MINIMUM AND 0.230 INCHES MAXIMUM
OVERALL LENGTH: 0.170 INCHES MINIMUM AND 0.210 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 0.6 WATTS MAXIMUM COLLECTOR POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: NPN
TERMINAL CIRCLE DIAMETER: 0.100 INCHES NOMINAL
TERMINAL LENGTH: 1.500 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 3 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 80.0 MAXIMUM COLLECTOR TO BASE VOLTAGE, DC AND 60.0 MAXIMUM COLLECTOR TO EMITTER VOLTAGE, DC AND 5.0 MAXIMUM EMITTER TO BASE VOLTAGE, DC

900201-0167

TRANSISTOR

NSN, MFG P/N

5961008874732

NSN

5961-00-887-4732

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900201-0167

TRANSISTOR

NSN, MFG P/N

5961008874732

NSN

5961-00-887-4732

MFG

NORTHROP GRUMMAN GUIDANCE AND ELECTRONICS COMPANY INC. DBA NAVIGATION SYSTEMS DIVISION DIV NAVIGATION SYSTEMS DIVISION

Description

CURRENT RATING PER CHARACTERISTIC: 0.15 AMPERES MAXIMUM COLLECTOR CURRENT, DC
ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE: COLLECTOR
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: JUNCTION CONTACT
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: TO-18
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.208 INCHES MINIMUM AND 0.230 INCHES MAXIMUM
OVERALL LENGTH: 0.170 INCHES MINIMUM AND 0.210 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 0.6 WATTS MAXIMUM COLLECTOR POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: NPN
TERMINAL CIRCLE DIAMETER: 0.100 INCHES NOMINAL
TERMINAL LENGTH: 1.500 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 3 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 80.0 MAXIMUM COLLECTOR TO BASE VOLTAGE, DC AND 60.0 MAXIMUM COLLECTOR TO EMITTER VOLTAGE, DC AND 5.0 MAXIMUM EMITTER TO BASE VOLTAGE, DC

S4240

TRANSISTOR

NSN, MFG P/N

5961008874732

NSN

5961-00-887-4732

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S4240

TRANSISTOR

NSN, MFG P/N

5961008874732

NSN

5961-00-887-4732

MFG

FAIRCHILD SEMICONDUCTOR CORP

Description

CURRENT RATING PER CHARACTERISTIC: 0.15 AMPERES MAXIMUM COLLECTOR CURRENT, DC
ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE: COLLECTOR
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: JUNCTION CONTACT
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: TO-18
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.208 INCHES MINIMUM AND 0.230 INCHES MAXIMUM
OVERALL LENGTH: 0.170 INCHES MINIMUM AND 0.210 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 0.6 WATTS MAXIMUM COLLECTOR POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: NPN
TERMINAL CIRCLE DIAMETER: 0.100 INCHES NOMINAL
TERMINAL LENGTH: 1.500 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 3 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 80.0 MAXIMUM COLLECTOR TO BASE VOLTAGE, DC AND 60.0 MAXIMUM COLLECTOR TO EMITTER VOLTAGE, DC AND 5.0 MAXIMUM EMITTER TO BASE VOLTAGE, DC

SGC8378

TRANSISTOR

NSN, MFG P/N

5961008874732

NSN

5961-00-887-4732

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SGC8378

TRANSISTOR

NSN, MFG P/N

5961008874732

NSN

5961-00-887-4732

MFG

TEXAS INSTRUMENTS INCORPORATED DBA TEXAS INSTRUMENTS DIV SEMICONDUCTOR GROUP

Description

CURRENT RATING PER CHARACTERISTIC: 0.15 AMPERES MAXIMUM COLLECTOR CURRENT, DC
ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE: COLLECTOR
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: JUNCTION CONTACT
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: TO-18
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.208 INCHES MINIMUM AND 0.230 INCHES MAXIMUM
OVERALL LENGTH: 0.170 INCHES MINIMUM AND 0.210 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 0.6 WATTS MAXIMUM COLLECTOR POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: NPN
TERMINAL CIRCLE DIAMETER: 0.100 INCHES NOMINAL
TERMINAL LENGTH: 1.500 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 3 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 80.0 MAXIMUM COLLECTOR TO BASE VOLTAGE, DC AND 60.0 MAXIMUM COLLECTOR TO EMITTER VOLTAGE, DC AND 5.0 MAXIMUM EMITTER TO BASE VOLTAGE, DC

ST8831

TRANSISTOR

NSN, MFG P/N

5961008874732

NSN

5961-00-887-4732

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ST8831

TRANSISTOR

NSN, MFG P/N

5961008874732

NSN

5961-00-887-4732

MFG

SEMICONDUCTOR TECHNOLOGY INC DBA S T I

Description

CURRENT RATING PER CHARACTERISTIC: 0.15 AMPERES MAXIMUM COLLECTOR CURRENT, DC
ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE: COLLECTOR
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: JUNCTION CONTACT
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: TO-18
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.208 INCHES MINIMUM AND 0.230 INCHES MAXIMUM
OVERALL LENGTH: 0.170 INCHES MINIMUM AND 0.210 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 0.6 WATTS MAXIMUM COLLECTOR POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: NPN
TERMINAL CIRCLE DIAMETER: 0.100 INCHES NOMINAL
TERMINAL LENGTH: 1.500 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 3 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 80.0 MAXIMUM COLLECTOR TO BASE VOLTAGE, DC AND 60.0 MAXIMUM COLLECTOR TO EMITTER VOLTAGE, DC AND 5.0 MAXIMUM EMITTER TO BASE VOLTAGE, DC

2398914

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961008875181

NSN

5961-00-887-5181

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2398914

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961008875181

NSN

5961-00-887-5181

MFG

ITT CORPORATION

Description

DESIGN CONTROL REFERENCE: 2398914
FEATURES PROVIDED: HERMETICALLY SEALED CASE
MANUFACTURERS CODE: 28527
MOUNTING METHOD: TERMINAL
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
THE MANUFACTURERS DATA:

MHD629

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961008875181

NSN

5961-00-887-5181

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MHD629

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961008875181

NSN

5961-00-887-5181

MFG

GENERAL ELECTRIC CO SEMI-CONDUCTOR PRODUCTS DEPT

Description

DESIGN CONTROL REFERENCE: 2398914
FEATURES PROVIDED: HERMETICALLY SEALED CASE
MANUFACTURERS CODE: 28527
MOUNTING METHOD: TERMINAL
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
THE MANUFACTURERS DATA:

552-1336-002

INSULATOR,TRANSISTO

NSN, MFG P/N

5961008875291

NSN

5961-00-887-5291

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552-1336-002

INSULATOR,TRANSISTO

NSN, MFG P/N

5961008875291

NSN

5961-00-887-5291

MFG

ROCKWELL COLLINS INC. DBA GOVERNMENT SYSTEMS DIV GOVERNMENT SYSTEMS