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5961-00-989-6707

20 Products

1800961

TRANSISTOR

NSN, MFG P/N

5961009896707

NSN

5961-00-989-6707

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1800961

TRANSISTOR

NSN, MFG P/N

5961009896707

NSN

5961-00-989-6707

MFG

NORTHROP GRUMMAN SYSTEMS CORPORATION

Description

DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: JAN2N1183B
ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE: COLLECTOR
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: JUNCTION CONTACT
MANUFACTURERS CODE: 81349
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.600 INCHES MINIMUM AND 0.650 INCHES MAXIMUM
OVERALL LENGTH: 0.300 INCHES MINIMUM AND 0.330 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 7.5 WATTS MAXIMUM COLLECTOR POWER DISSIPATION
SEMICONDUCTOR MATERIAL: GERMANIUM
SPEC/STD CONTROLLING DATA:
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: PNP
SPECIFICATION/STANDARD DATA: 81349-MIL-S-19500/143 GOVERNMENT SPECIFICATION
TERMINAL CIRCLE DIAMETER: 0.272 INCHES MINIMUM AND 0.292 INCHES MAXIMUM
TERMINAL LENGTH: 0.360 INCHES MINIMUM AND 0.440 INCHES MAXIMUM
TERMINAL TYPE AND QUANTITY: 3 UNINSULATED WIRE LEAD
TEST DATA DOCUMENT: 81349-MIL-S-19500 SPECIFICATION
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 80.0 MAXIMUM

225599

TRANSISTOR

NSN, MFG P/N

5961009896707

NSN

5961-00-989-6707

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225599

TRANSISTOR

NSN, MFG P/N

5961009896707

NSN

5961-00-989-6707

MFG

RCA CORP DISTRIBUTOR AND SPECIAL PRODUCTS DIV

Description

DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: JAN2N1183B
ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE: COLLECTOR
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: JUNCTION CONTACT
MANUFACTURERS CODE: 81349
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.600 INCHES MINIMUM AND 0.650 INCHES MAXIMUM
OVERALL LENGTH: 0.300 INCHES MINIMUM AND 0.330 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 7.5 WATTS MAXIMUM COLLECTOR POWER DISSIPATION
SEMICONDUCTOR MATERIAL: GERMANIUM
SPEC/STD CONTROLLING DATA:
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: PNP
SPECIFICATION/STANDARD DATA: 81349-MIL-S-19500/143 GOVERNMENT SPECIFICATION
TERMINAL CIRCLE DIAMETER: 0.272 INCHES MINIMUM AND 0.292 INCHES MAXIMUM
TERMINAL LENGTH: 0.360 INCHES MINIMUM AND 0.440 INCHES MAXIMUM
TERMINAL TYPE AND QUANTITY: 3 UNINSULATED WIRE LEAD
TEST DATA DOCUMENT: 81349-MIL-S-19500 SPECIFICATION
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 80.0 MAXIMUM

2N1183

TRANSISTOR

NSN, MFG P/N

5961009896707

NSN

5961-00-989-6707

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2N1183

TRANSISTOR

NSN, MFG P/N

5961009896707

NSN

5961-00-989-6707

MFG

MILITARY SPECIFICATIONS PROMULGATED BY MILITARY DEPARTMENTS/AGENCIES UNDER AUTHORITY OF DEFENSE STANDARDIZATION MANUAL 4120 3-M

Description

DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: JAN2N1183B
ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE: COLLECTOR
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: JUNCTION CONTACT
MANUFACTURERS CODE: 81349
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.600 INCHES MINIMUM AND 0.650 INCHES MAXIMUM
OVERALL LENGTH: 0.300 INCHES MINIMUM AND 0.330 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 7.5 WATTS MAXIMUM COLLECTOR POWER DISSIPATION
SEMICONDUCTOR MATERIAL: GERMANIUM
SPEC/STD CONTROLLING DATA:
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: PNP
SPECIFICATION/STANDARD DATA: 81349-MIL-S-19500/143 GOVERNMENT SPECIFICATION
TERMINAL CIRCLE DIAMETER: 0.272 INCHES MINIMUM AND 0.292 INCHES MAXIMUM
TERMINAL LENGTH: 0.360 INCHES MINIMUM AND 0.440 INCHES MAXIMUM
TERMINAL TYPE AND QUANTITY: 3 UNINSULATED WIRE LEAD
TEST DATA DOCUMENT: 81349-MIL-S-19500 SPECIFICATION
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 80.0 MAXIMUM

2N1183B

TRANSISTOR

NSN, MFG P/N

5961009896707

NSN

5961-00-989-6707

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2N1183B

TRANSISTOR

NSN, MFG P/N

5961009896707

NSN

5961-00-989-6707

MFG

RCA CORP DISTRIBUTION AND SPECIAL PRODUCTS

Description

DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: JAN2N1183B
ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE: COLLECTOR
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: JUNCTION CONTACT
MANUFACTURERS CODE: 81349
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.600 INCHES MINIMUM AND 0.650 INCHES MAXIMUM
OVERALL LENGTH: 0.300 INCHES MINIMUM AND 0.330 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 7.5 WATTS MAXIMUM COLLECTOR POWER DISSIPATION
SEMICONDUCTOR MATERIAL: GERMANIUM
SPEC/STD CONTROLLING DATA:
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: PNP
SPECIFICATION/STANDARD DATA: 81349-MIL-S-19500/143 GOVERNMENT SPECIFICATION
TERMINAL CIRCLE DIAMETER: 0.272 INCHES MINIMUM AND 0.292 INCHES MAXIMUM
TERMINAL LENGTH: 0.360 INCHES MINIMUM AND 0.440 INCHES MAXIMUM
TERMINAL TYPE AND QUANTITY: 3 UNINSULATED WIRE LEAD
TEST DATA DOCUMENT: 81349-MIL-S-19500 SPECIFICATION
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 80.0 MAXIMUM

345-123-003

TRANSISTOR

NSN, MFG P/N

5961009896707

NSN

5961-00-989-6707

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345-123-003

TRANSISTOR

NSN, MFG P/N

5961009896707

NSN

5961-00-989-6707

MFG

INTERSTATE ELECTRONICS CORPORATION

Description

DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: JAN2N1183B
ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE: COLLECTOR
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: JUNCTION CONTACT
MANUFACTURERS CODE: 81349
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.600 INCHES MINIMUM AND 0.650 INCHES MAXIMUM
OVERALL LENGTH: 0.300 INCHES MINIMUM AND 0.330 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 7.5 WATTS MAXIMUM COLLECTOR POWER DISSIPATION
SEMICONDUCTOR MATERIAL: GERMANIUM
SPEC/STD CONTROLLING DATA:
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: PNP
SPECIFICATION/STANDARD DATA: 81349-MIL-S-19500/143 GOVERNMENT SPECIFICATION
TERMINAL CIRCLE DIAMETER: 0.272 INCHES MINIMUM AND 0.292 INCHES MAXIMUM
TERMINAL LENGTH: 0.360 INCHES MINIMUM AND 0.440 INCHES MAXIMUM
TERMINAL TYPE AND QUANTITY: 3 UNINSULATED WIRE LEAD
TEST DATA DOCUMENT: 81349-MIL-S-19500 SPECIFICATION
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 80.0 MAXIMUM

373111

TRANSISTOR

NSN, MFG P/N

5961009896707

NSN

5961-00-989-6707

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373111

TRANSISTOR

NSN, MFG P/N

5961009896707

NSN

5961-00-989-6707

MFG

AVTRON AEROSPACE INC.

Description

DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: JAN2N1183B
ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE: COLLECTOR
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: JUNCTION CONTACT
MANUFACTURERS CODE: 81349
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.600 INCHES MINIMUM AND 0.650 INCHES MAXIMUM
OVERALL LENGTH: 0.300 INCHES MINIMUM AND 0.330 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 7.5 WATTS MAXIMUM COLLECTOR POWER DISSIPATION
SEMICONDUCTOR MATERIAL: GERMANIUM
SPEC/STD CONTROLLING DATA:
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: PNP
SPECIFICATION/STANDARD DATA: 81349-MIL-S-19500/143 GOVERNMENT SPECIFICATION
TERMINAL CIRCLE DIAMETER: 0.272 INCHES MINIMUM AND 0.292 INCHES MAXIMUM
TERMINAL LENGTH: 0.360 INCHES MINIMUM AND 0.440 INCHES MAXIMUM
TERMINAL TYPE AND QUANTITY: 3 UNINSULATED WIRE LEAD
TEST DATA DOCUMENT: 81349-MIL-S-19500 SPECIFICATION
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 80.0 MAXIMUM

DMS 90016B

TRANSISTOR

NSN, MFG P/N

5961009896707

NSN

5961-00-989-6707

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DMS 90016B

TRANSISTOR

NSN, MFG P/N

5961009896707

NSN

5961-00-989-6707

MFG

DLA LAND AND MARITIME

Description

DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: JAN2N1183B
ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE: COLLECTOR
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: JUNCTION CONTACT
MANUFACTURERS CODE: 81349
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.600 INCHES MINIMUM AND 0.650 INCHES MAXIMUM
OVERALL LENGTH: 0.300 INCHES MINIMUM AND 0.330 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 7.5 WATTS MAXIMUM COLLECTOR POWER DISSIPATION
SEMICONDUCTOR MATERIAL: GERMANIUM
SPEC/STD CONTROLLING DATA:
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: PNP
SPECIFICATION/STANDARD DATA: 81349-MIL-S-19500/143 GOVERNMENT SPECIFICATION
TERMINAL CIRCLE DIAMETER: 0.272 INCHES MINIMUM AND 0.292 INCHES MAXIMUM
TERMINAL LENGTH: 0.360 INCHES MINIMUM AND 0.440 INCHES MAXIMUM
TERMINAL TYPE AND QUANTITY: 3 UNINSULATED WIRE LEAD
TEST DATA DOCUMENT: 81349-MIL-S-19500 SPECIFICATION
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 80.0 MAXIMUM

1N3006RB

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961009897324

NSN

5961-00-989-7324

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1N3006RB

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961009897324

NSN

5961-00-989-7324

MFG

ELECTRONIC INDUSTRIES ASSOCIATION

Description

CURRENT RATING PER CHARACTERISTIC: 25.00 MILLIAMPERES MAXIMUM MAXIMUM REVERSE SURGE CURRENT
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
MOUNTING FACILITY QUANTITY: 1
MOUNTING METHOD: THREADED STUD
NOMINAL THREAD SIZE: 0.190 INCHES
OVERALL DIAMETER: 0.424 INCHES MAXIMUM
OVERALL LENGTH: 0.405 INCHES MAXIMUM
OVERALL WIDTH ACROSS FLATS: 0.424 INCHES MINIMUM AND 0.437 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 10.0 WATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPECIFICATION/STANDARD DATA: 80131-RELEASE2986 PROFESSIONAL/INDUSTRIAL ASSOCIATION SPECIFICATION
TERMINAL TYPE AND QUANTITY: 1 THREADED STUD AND 1 TAB, SOLDER LUG
THREAD SERIES DESIGNATOR: UNF
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 105.0 MAXIMUM NOMINAL REGULATOR VOLTAGE

1205002P1

TRANSISTOR

NSN, MFG P/N

5961009897530

NSN

5961-00-989-7530

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1205002P1

TRANSISTOR

NSN, MFG P/N

5961009897530

NSN

5961-00-989-7530

MFG

BAE SYSTEMS INFORMATION AND ELECTRONIC SYSTEMS INTEGRATION I

Description

CURRENT RATING PER CHARACTERISTIC: 1.00 AMPERES MAXIMUM BASE CURRENT, DC AND 10.00 AMPERES MAXIMUM COLLECTOR CURRENT, DC
ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE: COLLECTOR
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: JUNCTION CONTACT
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 100.0 DEG CELSIUS JUNCTION
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 1.281 INCHES NOMINAL
OVERALL LENGTH: 0.546 INCHES NOMINAL
POWER RATING PER CHARACTERISTIC: 150.0 WATTS MAXIMUM COLLECTOR POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: NPN
SPECIFICATION/STANDARD DATA: 80131-RELEASE3577 PROFESSIONAL/INDUSTRIAL ASSOCIATION SPECIFICATION
TERMINAL CIRCLE DIAMETER: 0.750 INCHES NOMINAL
TERMINAL LENGTH: 0.562 INCHES NOMINAL
TERMINAL TYPE AND QUANTITY: 1 THREADED STUD AND 2 TAB, SOLDER LUG
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 50.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-BASE

2N2226

TRANSISTOR

NSN, MFG P/N

5961009897530

NSN

5961-00-989-7530

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2N2226

TRANSISTOR

NSN, MFG P/N

5961009897530

NSN

5961-00-989-7530

MFG

ELECTRONIC INDUSTRIES ASSOCIATION

Description

CURRENT RATING PER CHARACTERISTIC: 1.00 AMPERES MAXIMUM BASE CURRENT, DC AND 10.00 AMPERES MAXIMUM COLLECTOR CURRENT, DC
ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE: COLLECTOR
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: JUNCTION CONTACT
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 100.0 DEG CELSIUS JUNCTION
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 1.281 INCHES NOMINAL
OVERALL LENGTH: 0.546 INCHES NOMINAL
POWER RATING PER CHARACTERISTIC: 150.0 WATTS MAXIMUM COLLECTOR POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: NPN
SPECIFICATION/STANDARD DATA: 80131-RELEASE3577 PROFESSIONAL/INDUSTRIAL ASSOCIATION SPECIFICATION
TERMINAL CIRCLE DIAMETER: 0.750 INCHES NOMINAL
TERMINAL LENGTH: 0.562 INCHES NOMINAL
TERMINAL TYPE AND QUANTITY: 1 THREADED STUD AND 2 TAB, SOLDER LUG
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 50.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-BASE

2N2226A

TRANSISTOR

NSN, MFG P/N

5961009897530

NSN

5961-00-989-7530

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2N2226A

TRANSISTOR

NSN, MFG P/N

5961009897530

NSN

5961-00-989-7530

MFG

ADELCO ELEKTRONIK GMBH

Description

CURRENT RATING PER CHARACTERISTIC: 1.00 AMPERES MAXIMUM BASE CURRENT, DC AND 10.00 AMPERES MAXIMUM COLLECTOR CURRENT, DC
ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE: COLLECTOR
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: JUNCTION CONTACT
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 100.0 DEG CELSIUS JUNCTION
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 1.281 INCHES NOMINAL
OVERALL LENGTH: 0.546 INCHES NOMINAL
POWER RATING PER CHARACTERISTIC: 150.0 WATTS MAXIMUM COLLECTOR POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: NPN
SPECIFICATION/STANDARD DATA: 80131-RELEASE3577 PROFESSIONAL/INDUSTRIAL ASSOCIATION SPECIFICATION
TERMINAL CIRCLE DIAMETER: 0.750 INCHES NOMINAL
TERMINAL LENGTH: 0.562 INCHES NOMINAL
TERMINAL TYPE AND QUANTITY: 1 THREADED STUD AND 2 TAB, SOLDER LUG
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 50.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-BASE

2N1491

TRANSISTOR

NSN, MFG P/N

5961009897538

NSN

5961-00-989-7538

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2N1491

TRANSISTOR

NSN, MFG P/N

5961009897538

NSN

5961-00-989-7538

MFG

L-3 COMMUNICATIONS CORPORATION DBA COMMUNICATION SYSTEMS - EAST DIVISION

Description

CURRENT RATING PER CHARACTERISTIC: 100.00 MILLIAMPERES MAXIMUM COLLECTOR CURRENT, DC
ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE: COLLECTOR
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: JUNCTION CONTACT
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 200.0 DEG CELSIUS CASE
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.335 INCHES MAXIMUM
OVERALL LENGTH: 0.260 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 500.0 MILLIWATTS MAXIMUM COLLECTOR POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: NPN
TERMINAL CIRCLE DIAMETER: 0.200 INCHES NOMINAL
TERMINAL LENGTH: 0.500 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 3 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 30.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-BASE, EMITTER OPEN AND 30.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-EMITTER, BASE OPEN AND 1.0 MAXIMUM BREAKDOWN VOLTAGE, EMITTER-TO-BASE, COLLECTOR OPEN

2088276-0010

TRANSISTOR

NSN, MFG P/N

5961009897539

NSN

5961-00-989-7539

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2088276-0010

TRANSISTOR

NSN, MFG P/N

5961009897539

NSN

5961-00-989-7539

MFG

HONEYWELL INTERNATIONAL INC DBA HONEYWELL

Description

DESIGN CONTROL REFERENCE: 2088276-0010
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INTERNAL CONFIGURATION: JUNCTION CONTACT
MANUFACTURERS CODE: 27914
SEMICONDUCTOR MATERIAL: GERMANIUM
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: PNP
TERMINAL TYPE AND QUANTITY: 3 PIN
THE MANUFACTURERS DATA:

CDT1339

TRANSISTOR

NSN, MFG P/N

5961009897539

NSN

5961-00-989-7539

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CDT1339

TRANSISTOR

NSN, MFG P/N

5961009897539

NSN

5961-00-989-7539

MFG

MORGAN ADVANCED CERAMICS INC . DBA MORGAN ELECTRO CERAMICS DIV MORGAN ELECTRO CERAMICS

Description

DESIGN CONTROL REFERENCE: 2088276-0010
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INTERNAL CONFIGURATION: JUNCTION CONTACT
MANUFACTURERS CODE: 27914
SEMICONDUCTOR MATERIAL: GERMANIUM
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: PNP
TERMINAL TYPE AND QUANTITY: 3 PIN
THE MANUFACTURERS DATA:

N2088276-10REVN

TRANSISTOR

NSN, MFG P/N

5961009897539

NSN

5961-00-989-7539

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N2088276-10REVN

TRANSISTOR

NSN, MFG P/N

5961009897539

NSN

5961-00-989-7539

MFG

RAYTHEON COMPANY DBA RAYTHEON

Description

DESIGN CONTROL REFERENCE: 2088276-0010
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INTERNAL CONFIGURATION: JUNCTION CONTACT
MANUFACTURERS CODE: 27914
SEMICONDUCTOR MATERIAL: GERMANIUM
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: PNP
TERMINAL TYPE AND QUANTITY: 3 PIN
THE MANUFACTURERS DATA:

TS1428

TRANSISTOR

NSN, MFG P/N

5961009897539

NSN

5961-00-989-7539

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TS1428

TRANSISTOR

NSN, MFG P/N

5961009897539

NSN

5961-00-989-7539

MFG

COOPER INDUSTRIES INC CHAMPION AVIATION PRODUCTS

Description

DESIGN CONTROL REFERENCE: 2088276-0010
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INTERNAL CONFIGURATION: JUNCTION CONTACT
MANUFACTURERS CODE: 27914
SEMICONDUCTOR MATERIAL: GERMANIUM
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: PNP
TERMINAL TYPE AND QUANTITY: 3 PIN
THE MANUFACTURERS DATA:

2N995

TRANSISTOR

NSN, MFG P/N

5961009897901

NSN

5961-00-989-7901

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2N995

TRANSISTOR

NSN, MFG P/N

5961009897901

NSN

5961-00-989-7901

MFG

ELECTRONIC INDUSTRIES ASSOCIATION

Description

ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE: COLLECTOR
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: JUNCTION CONTACT
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 200.0 DEG CELSIUS JUNCTION
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.230 INCHES MAXIMUM
OVERALL LENGTH: 0.210 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 360.0 MILLIWATTS MAXIMUM COLLECTOR POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: PNP
SPECIFICATION/STANDARD DATA: 80131-RELEASE3603 PROFESSIONAL/INDUSTRIAL ASSOCIATION SPECIFICATION
TERMINAL CIRCLE DIAMETER: 0.100 INCHES NOMINAL
TERMINAL LENGTH: 0.500 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 3 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 20.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-BASE, EMITTER OPEN AND 15.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-EMITTER, BASE OPEN AND 4.0 MAXIMUM BREAKDOWN VOLTAGE, EMITTER-TO-BASE

41175-089-6

TRANSISTOR

NSN, MFG P/N

5961009897901

NSN

5961-00-989-7901

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41175-089-6

TRANSISTOR

NSN, MFG P/N

5961009897901

NSN

5961-00-989-7901

MFG

BRITISH AEROSPACE DEFENCE SYSTEMS LT D T/A BAE SYSTEMS

Description

ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE: COLLECTOR
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: JUNCTION CONTACT
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 200.0 DEG CELSIUS JUNCTION
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.230 INCHES MAXIMUM
OVERALL LENGTH: 0.210 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 360.0 MILLIWATTS MAXIMUM COLLECTOR POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: PNP
SPECIFICATION/STANDARD DATA: 80131-RELEASE3603 PROFESSIONAL/INDUSTRIAL ASSOCIATION SPECIFICATION
TERMINAL CIRCLE DIAMETER: 0.100 INCHES NOMINAL
TERMINAL LENGTH: 0.500 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 3 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 20.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-BASE, EMITTER OPEN AND 15.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-EMITTER, BASE OPEN AND 4.0 MAXIMUM BREAKDOWN VOLTAGE, EMITTER-TO-BASE

SZ1141

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961009898261

NSN

5961-00-989-8261

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SZ1141

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961009898261

NSN

5961-00-989-8261

MFG

GENERAL DYNAMICS C4 SYSTEMS INC.

Description

DESIGN CONTROL REFERENCE: SZ1141
FEATURES PROVIDED: HERMETICALLY SEALED CASE
MANUFACTURERS CODE: 1VPW8
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 1 TAB, SOLDER LUG AND 1 THREADED STUD
THE MANUFACTURERS DATA:

318324

TRANSISTOR

NSN, MFG P/N

5961009898708

NSN

5961-00-989-8708

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318324

TRANSISTOR

NSN, MFG P/N

5961009898708

NSN

5961-00-989-8708

MFG

LOCKHEED MARTIN CORPORATION DBA MISSION SYSTEMS & SENSORS

Description

FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: JUNCTION CONTACT
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.358 INCHES MINIMUM AND 0.370 INCHES MAXIMUM
OVERALL LENGTH: 0.242 INCHES MINIMUM AND 0.260 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: GERMANIUM
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: PNP
TERMINAL CIRCLE DIAMETER: 0.100 INCHES NOMINAL
TERMINAL LENGTH: 0.151 INCHES MINIMUM AND 0.166 INCHES MAXIMUM
TERMINAL TYPE AND QUANTITY: 3 UNINSULATED WIRE LEAD