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5961-01-039-7009
20 Products
1400185-36
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961010397009
NSN
5961-01-039-7009
1400185-36
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961010397009
NSN
5961-01-039-7009
MFG
RAYTHEON TECHNICAL SERVICES COMPANY
Description
CURRENT RATING PER CHARACTERISTIC: 5.00 AMPERES MAXIMUM FORWARD CURRENT, DC
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.395 INCHES MINIMUM AND 0.405 INCHES MAXIMUM
OVERALL LENGTH: 0.234 INCHES MINIMUM AND 0.245 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 100.0 MAXIMUM REVERSE VOLTAGE, PEAK
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BFR90
TRANSISTOR
NSN, MFG P/N
5961010396425
NSN
5961-01-039-6425
MFG
AMPEREX ELECTRONIC CORP
Description
CRITICALITY CODE JUSTIFICATION: FEAT
CURRENT RATING PER CHARACTERISTIC: 25.00 MILLIAMPERES MAXIMUM COLLECTOR CURRENT, DC
ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE: COLLECTOR
III END ITEM IDENTIFICATION: TICONDEROGA CLASS CG (47); STURGEON CLASS SSN (637); VIRGINIA CLASS CGN (41); FORRESTAL CLASS CV; SPRUANCE CLASS DD )963); LOS ANGELES CLASS SSN (688); NIMITZ CLASS CVN; KIDD CLASS DDG; LANDING CRAFT AIR CUSHION (LCAC)
INCLOSURE MATERIAL: CERAMIC
INTERNAL CONFIGURATION: JUNCTION CONTACT
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 165.0 DEG CELSIUS JUNCTION
MOUNTING METHOD: PRESS FIT
OVERALL HEIGHT: 0.106 INCHES MAXIMUM
OVERALL LENGTH: 0.106 INCHES MAXIMUM
OVERALL WIDTH: 0.314 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 180.0 MILLIWATTS MAXIMUM COLLECTOR POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: WEAPON SYSTEM ESSENTIAL; JUNCTION PATTERN ARRANGEMENT: NPN
TERMINAL TYPE AND QUANTITY: 3 TAB, SOLDER LUG
VOLTAGE RATING IN VOLTS PER
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CS501040-1
TRANSISTOR
NSN, MFG P/N
5961010396425
NSN
5961-01-039-6425
MFG
SELEX COMMUNICATIONS LTD
Description
CRITICALITY CODE JUSTIFICATION: FEAT
CURRENT RATING PER CHARACTERISTIC: 25.00 MILLIAMPERES MAXIMUM COLLECTOR CURRENT, DC
ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE: COLLECTOR
III END ITEM IDENTIFICATION: TICONDEROGA CLASS CG (47); STURGEON CLASS SSN (637); VIRGINIA CLASS CGN (41); FORRESTAL CLASS CV; SPRUANCE CLASS DD )963); LOS ANGELES CLASS SSN (688); NIMITZ CLASS CVN; KIDD CLASS DDG; LANDING CRAFT AIR CUSHION (LCAC)
INCLOSURE MATERIAL: CERAMIC
INTERNAL CONFIGURATION: JUNCTION CONTACT
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 165.0 DEG CELSIUS JUNCTION
MOUNTING METHOD: PRESS FIT
OVERALL HEIGHT: 0.106 INCHES MAXIMUM
OVERALL LENGTH: 0.106 INCHES MAXIMUM
OVERALL WIDTH: 0.314 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 180.0 MILLIWATTS MAXIMUM COLLECTOR POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: WEAPON SYSTEM ESSENTIAL; JUNCTION PATTERN ARRANGEMENT: NPN
TERMINAL TYPE AND QUANTITY: 3 TAB, SOLDER LUG
VOLTAGE RATING IN VOLTS PER
Related Searches:
DA-00-027
TRANSISTOR
NSN, MFG P/N
5961010396425
NSN
5961-01-039-6425
MFG
TECHTEST LTD
Description
CRITICALITY CODE JUSTIFICATION: FEAT
CURRENT RATING PER CHARACTERISTIC: 25.00 MILLIAMPERES MAXIMUM COLLECTOR CURRENT, DC
ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE: COLLECTOR
III END ITEM IDENTIFICATION: TICONDEROGA CLASS CG (47); STURGEON CLASS SSN (637); VIRGINIA CLASS CGN (41); FORRESTAL CLASS CV; SPRUANCE CLASS DD )963); LOS ANGELES CLASS SSN (688); NIMITZ CLASS CVN; KIDD CLASS DDG; LANDING CRAFT AIR CUSHION (LCAC)
INCLOSURE MATERIAL: CERAMIC
INTERNAL CONFIGURATION: JUNCTION CONTACT
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 165.0 DEG CELSIUS JUNCTION
MOUNTING METHOD: PRESS FIT
OVERALL HEIGHT: 0.106 INCHES MAXIMUM
OVERALL LENGTH: 0.106 INCHES MAXIMUM
OVERALL WIDTH: 0.314 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 180.0 MILLIWATTS MAXIMUM COLLECTOR POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: WEAPON SYSTEM ESSENTIAL; JUNCTION PATTERN ARRANGEMENT: NPN
TERMINAL TYPE AND QUANTITY: 3 TAB, SOLDER LUG
VOLTAGE RATING IN VOLTS PER
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P/N 5-0143
TRANSISTOR
NSN, MFG P/N
5961010396425
NSN
5961-01-039-6425
MFG
ELMAN SRL
Description
CRITICALITY CODE JUSTIFICATION: FEAT
CURRENT RATING PER CHARACTERISTIC: 25.00 MILLIAMPERES MAXIMUM COLLECTOR CURRENT, DC
ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE: COLLECTOR
III END ITEM IDENTIFICATION: TICONDEROGA CLASS CG (47); STURGEON CLASS SSN (637); VIRGINIA CLASS CGN (41); FORRESTAL CLASS CV; SPRUANCE CLASS DD )963); LOS ANGELES CLASS SSN (688); NIMITZ CLASS CVN; KIDD CLASS DDG; LANDING CRAFT AIR CUSHION (LCAC)
INCLOSURE MATERIAL: CERAMIC
INTERNAL CONFIGURATION: JUNCTION CONTACT
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 165.0 DEG CELSIUS JUNCTION
MOUNTING METHOD: PRESS FIT
OVERALL HEIGHT: 0.106 INCHES MAXIMUM
OVERALL LENGTH: 0.106 INCHES MAXIMUM
OVERALL WIDTH: 0.314 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 180.0 MILLIWATTS MAXIMUM COLLECTOR POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: WEAPON SYSTEM ESSENTIAL; JUNCTION PATTERN ARRANGEMENT: NPN
TERMINAL TYPE AND QUANTITY: 3 TAB, SOLDER LUG
VOLTAGE RATING IN VOLTS PER
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KE4393
TRANSISTOR
NSN, MFG P/N
5961010396426
NSN
5961-01-039-6426
MFG
NATIONAL SEMICONDUCTOR CORPORATION
Description
(NON-CORE DATA) CHANNEL POLARITY AND CONTROL TYPE: N-CHANNEL JUNCTION TYPE
CURRENT RATING PER CHARACTERISTIC: 50.00 MILLIAMPERES MAXIMUM GATE CURRENT
DESIGN CONTROL REFERENCE: PN4393-18
ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE: GATE
INCLOSURE MATERIAL: PLASTIC
INTERNAL CONFIGURATION: FIELD EFFECT
MANUFACTURERS CODE: 17856
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 175.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
OVERALL HEIGHT: 0.240 INCHES MAXIMUM
OVERALL LENGTH: 0.240 INCHES MAXIMUM
OVERALL WIDTH: 0.222 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 360.0 MILLIWATTS MAXIMUM TOTAL DEVICE DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL CIRCLE DIAMETER: 0.100 INCHES NOMINAL
TERMINAL LENGTH: 0.500 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 3 UNINSULATED WIRE LEAD
THE MANUFACTURERS DATA:
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 20.0 NOMINAL PEAK-POINT VOLTAGE
Related Searches:
PN4393-18
TRANSISTOR
NSN, MFG P/N
5961010396426
NSN
5961-01-039-6426
MFG
SILICONIX INCORPORATED D IV SILICONIX
Description
(NON-CORE DATA) CHANNEL POLARITY AND CONTROL TYPE: N-CHANNEL JUNCTION TYPE
CURRENT RATING PER CHARACTERISTIC: 50.00 MILLIAMPERES MAXIMUM GATE CURRENT
DESIGN CONTROL REFERENCE: PN4393-18
ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE: GATE
INCLOSURE MATERIAL: PLASTIC
INTERNAL CONFIGURATION: FIELD EFFECT
MANUFACTURERS CODE: 17856
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 175.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
OVERALL HEIGHT: 0.240 INCHES MAXIMUM
OVERALL LENGTH: 0.240 INCHES MAXIMUM
OVERALL WIDTH: 0.222 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 360.0 MILLIWATTS MAXIMUM TOTAL DEVICE DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL CIRCLE DIAMETER: 0.100 INCHES NOMINAL
TERMINAL LENGTH: 0.500 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 3 UNINSULATED WIRE LEAD
THE MANUFACTURERS DATA:
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 20.0 NOMINAL PEAK-POINT VOLTAGE
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38800017
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961010396427
NSN
5961-01-039-6427
MFG
DELTYME CORPORATION
Description
CURRENT RATING PER CHARACTERISTIC: 3.00 AMPERES NOMINAL ON-STATE CURRENT, RMS TOTAL
DESIGN CONTROL REFERENCE: H133SS
FEATURES PROVIDED: HERMETICALLY SEALED CASE
MANUFACTURERS CODE: 58822
OVERALL DIAMETER: 0.370 INCHES MAXIMUM
OVERALL HEIGHT: 0.260 INCHES MAXIMUM
OVERALL LENGTH: 0.260 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 20.0 WATTS MAXIMUM PEAK GATE POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 3 UNINSULATED WIRE LEAD
THE MANUFACTURERS DATA:
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 300.0 NOMINAL REPETITIVE PEAK OFF-STATE VOLTAGE
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H133SS
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961010396427
NSN
5961-01-039-6427
MFG
HUTSON AEROSPACE INC SUB OF TELEFLEX INC
Description
CURRENT RATING PER CHARACTERISTIC: 3.00 AMPERES NOMINAL ON-STATE CURRENT, RMS TOTAL
DESIGN CONTROL REFERENCE: H133SS
FEATURES PROVIDED: HERMETICALLY SEALED CASE
MANUFACTURERS CODE: 58822
OVERALL DIAMETER: 0.370 INCHES MAXIMUM
OVERALL HEIGHT: 0.260 INCHES MAXIMUM
OVERALL LENGTH: 0.260 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 20.0 WATTS MAXIMUM PEAK GATE POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 3 UNINSULATED WIRE LEAD
THE MANUFACTURERS DATA:
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 300.0 NOMINAL REPETITIVE PEAK OFF-STATE VOLTAGE
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1N5268
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961010396428
NSN
5961-01-039-6428
MFG
ELECTRONIC INDUSTRIES ASSOCIATION
Description
CURRENT RATING PER CHARACTERISTIC: 1.50 MILLIAMPERES MAXIMUM VOLTAGE REGULATOR DIODE CURRENT
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: GLASS
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 200.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.107 INCHES MAXIMUM
OVERALL LENGTH: 0.300 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 0.5 WATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL LENGTH: 1.000 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 82.0 MAXIMUM NOMINAL REGULATOR VOLTAGE
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38910097
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961010396428
NSN
5961-01-039-6428
MFG
DELTYME CORPORATION
Description
CURRENT RATING PER CHARACTERISTIC: 1.50 MILLIAMPERES MAXIMUM VOLTAGE REGULATOR DIODE CURRENT
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: GLASS
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 200.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.107 INCHES MAXIMUM
OVERALL LENGTH: 0.300 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 0.5 WATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL LENGTH: 1.000 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 82.0 MAXIMUM NOMINAL REGULATOR VOLTAGE
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BZX83C5V6
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961010396594
NSN
5961-01-039-6594
MFG
VISHAY
Description
SEMICONDUCTOR DEVICE,DIODE
Related Searches:
959341-0001
SEMICONDUCTOR DEVICE ASSEMBLY
NSN, MFG P/N
5961010396626
NSN
5961-01-039-6626
959341-0001
SEMICONDUCTOR DEVICE ASSEMBLY
NSN, MFG P/N
5961010396626
NSN
5961-01-039-6626
MFG
TEXAS INSTRUMENTS INC INFORMATION TECHNOLOGY GROUP
Description
DESIGN CONTROL REFERENCE: 959341-0001
MAJOR COMPONENTS: DIODE 4
MANUFACTURERS CODE: 06668
MOUNTING CONFIGURATION: FOUR WIRE LEADS 1.500IN. LG,0.035 IN. DIA
THE MANUFACTURERS DATA:
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263989
TRANSISTOR
NSN, MFG P/N
5961010397002
NSN
5961-01-039-7002
MFG
LDS TEST AND MEASUREMENT LLC
Description
CURRENT RATING PER CHARACTERISTIC: 50.00 MILLIAMPERES MAXIMUM COLLECTOR CURRENT, DC
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: UNIJUNCTION
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 125.0 DEG CELSIUS JUNCTION
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.230 INCHES MAXIMUM
OVERALL LENGTH: 0.210 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 300.0 MILLIWATTS MAXIMUM COLLECTOR POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: PN
TERMINAL CIRCLE DIAMETER: 0.100 INCHES NOMINAL
TERMINAL LENGTH: 0.500 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 4 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 30.0 MAXIMUM REVERSE VOLTAGE, DC AND 35.0 MAXIMUM INTERBASE VOLTAGE
Related Searches:
12050-0012
TRANSISTOR
NSN, MFG P/N
5961010397003
NSN
5961-01-039-7003
MFG
HONEYWELL INTERNATIONAL INC DBA HONEYWELL
Description
(NON-CORE DATA) CHANNEL POLARITY AND CONTROL TYPE: N-CHANNEL JUNCTION TYPE
CURRENT RATING PER CHARACTERISTIC: 10.00 MILLIAMPERES MAXIMUM GATE CURRENT
INCLOSURE MATERIAL: PLASTIC
INTERNAL CONFIGURATION: FIELD EFFECT
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 125.0 DEG CELSIUS JUNCTION
MOUNTING METHOD: TERMINAL
OVERALL HEIGHT: 0.125 INCHES MINIMUM AND 0.165 INCHES MAXIMUM
OVERALL LENGTH: 0.170 INCHES MINIMUM AND 0.210 INCHES MAXIMUM
OVERALL WIDTH: 0.175 INCHES MINIMUM AND 0.205 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 200.0 MILLIWATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL LENGTH: 0.500 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 3 UNINSULATED WIRE LEAD
TEST DATA DOCUMENT: 27914-12050 DRAWING
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 25.0 MAXIMUM DRAIN TO GATE VOLTAGE AND 25.0 MAXIMUM DRAIN TO SOURCE VOLTAGE
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TIS58N
TRANSISTOR
NSN, MFG P/N
5961010397003
NSN
5961-01-039-7003
MFG
TEXAS INSTRUMENTS INCORPORATED DBA TEXAS INSTRUMENTS DIV SEMICONDUCTOR GROUP
Description
(NON-CORE DATA) CHANNEL POLARITY AND CONTROL TYPE: N-CHANNEL JUNCTION TYPE
CURRENT RATING PER CHARACTERISTIC: 10.00 MILLIAMPERES MAXIMUM GATE CURRENT
INCLOSURE MATERIAL: PLASTIC
INTERNAL CONFIGURATION: FIELD EFFECT
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 125.0 DEG CELSIUS JUNCTION
MOUNTING METHOD: TERMINAL
OVERALL HEIGHT: 0.125 INCHES MINIMUM AND 0.165 INCHES MAXIMUM
OVERALL LENGTH: 0.170 INCHES MINIMUM AND 0.210 INCHES MAXIMUM
OVERALL WIDTH: 0.175 INCHES MINIMUM AND 0.205 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 200.0 MILLIWATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL LENGTH: 0.500 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 3 UNINSULATED WIRE LEAD
TEST DATA DOCUMENT: 27914-12050 DRAWING
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 25.0 MAXIMUM DRAIN TO GATE VOLTAGE AND 25.0 MAXIMUM DRAIN TO SOURCE VOLTAGE
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MJE250
TRANSISTOR
NSN, MFG P/N
5961010397005
NSN
5961-01-039-7005
MFG
FREESCALE SEMICONDUCTOR INC.
Description
CURRENT RATING PER CHARACTERISTIC: 1.00 AMPERES MAXIMUM BASE CURRENT, DC AND 4.00 AMPERES MAXIMUM COLLECTOR CURRENT, DC
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: PLASTIC
INTERNAL CONFIGURATION: JUNCTION CONTACT
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 150.0 DEG CELSIUS JUNCTION
MOUNTING FACILITY QUANTITY: 1
MOUNTING METHOD: UNTHREADED HOLE
OVERALL HEIGHT: 0.045 INCHES MINIMUM AND 0.055 INCHES MAXIMUM
OVERALL LENGTH: 0.295 INCHES MINIMUM AND 0.305 INCHES MAXIMUM
OVERALL WIDTH: 0.277 INCHES NOMINAL
POWER RATING PER CHARACTERISTIC: 1.5 MILLIWATTS MAXIMUM COLLECTOR POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: MTG TAB INCLUDED; JUNCTION PATTERN ARRANGEMENT: PN
TERMINAL TYPE AND QUANTITY: 3 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 80.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-BASE, EMITTER OPEN AND 80.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-EMITTER, BASE OPEN AND 7.0 MAXIMUM BREAKDOWN VOLTAGE, EMITT
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SP15452LD3
TRANSISTOR
NSN, MFG P/N
5961010397005
NSN
5961-01-039-7005
MFG
SPRAGUE ELECTRIC CO WORLD HQS
Description
CURRENT RATING PER CHARACTERISTIC: 1.00 AMPERES MAXIMUM BASE CURRENT, DC AND 4.00 AMPERES MAXIMUM COLLECTOR CURRENT, DC
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: PLASTIC
INTERNAL CONFIGURATION: JUNCTION CONTACT
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 150.0 DEG CELSIUS JUNCTION
MOUNTING FACILITY QUANTITY: 1
MOUNTING METHOD: UNTHREADED HOLE
OVERALL HEIGHT: 0.045 INCHES MINIMUM AND 0.055 INCHES MAXIMUM
OVERALL LENGTH: 0.295 INCHES MINIMUM AND 0.305 INCHES MAXIMUM
OVERALL WIDTH: 0.277 INCHES NOMINAL
POWER RATING PER CHARACTERISTIC: 1.5 MILLIWATTS MAXIMUM COLLECTOR POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: MTG TAB INCLUDED; JUNCTION PATTERN ARRANGEMENT: PN
TERMINAL TYPE AND QUANTITY: 3 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 80.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-BASE, EMITTER OPEN AND 80.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-EMITTER, BASE OPEN AND 7.0 MAXIMUM BREAKDOWN VOLTAGE, EMITT
Related Searches:
1N4408B
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961010397008
NSN
5961-01-039-7008
MFG
ELECTRONIC INDUSTRIES ASSOCIATION
Description
CURRENT RATING PER CHARACTERISTIC: 17.00 MILLIAMPERES MAXIMUM MAXIMUM REVERSE SURGE CURRENT
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: GLASS
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 175.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.110 INCHES NOMINAL
OVERALL LENGTH: 0.280 INCHES NOMINAL
POWER RATING PER CHARACTERISTIC: 1.0 WATTS MAXIMUM TOTAL DEVICE DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPECIFICATION/STANDARD DATA: 80131-RELEASE4730 PROFESSIONAL/INDUSTRIAL ASSOCIATION SPECIFICATION
TERMINAL LENGTH: 1.000 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 15.0 MAXIMUM NOMINAL REGULATOR VOLTAGE
Related Searches:
249180
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961010397008
NSN
5961-01-039-7008
MFG
GOULD INSTRUMENT SYSTEMS INC
Description
CURRENT RATING PER CHARACTERISTIC: 17.00 MILLIAMPERES MAXIMUM MAXIMUM REVERSE SURGE CURRENT
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: GLASS
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 175.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.110 INCHES NOMINAL
OVERALL LENGTH: 0.280 INCHES NOMINAL
POWER RATING PER CHARACTERISTIC: 1.0 WATTS MAXIMUM TOTAL DEVICE DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPECIFICATION/STANDARD DATA: 80131-RELEASE4730 PROFESSIONAL/INDUSTRIAL ASSOCIATION SPECIFICATION
TERMINAL LENGTH: 1.000 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 15.0 MAXIMUM NOMINAL REGULATOR VOLTAGE
