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5961-01-075-9196
20 Products
6096543-1
SEMICONDUCTOR DEVICES,UNITIZED
NSN, MFG P/N
5961010759196
NSN
5961-01-075-9196
6096543-1
SEMICONDUCTOR DEVICES,UNITIZED
NSN, MFG P/N
5961010759196
NSN
5961-01-075-9196
MFG
LOCKHEED MARTIN CORPORATION DBA MISSION SYSTEMS & SENSORS
Description
COMPONENT NAME AND QUANTITY: 2 TRANSISTOR
OVERALL HEIGHT: 0.030 INCHES MINIMUM AND 0.080 INCHES MAXIMUM
OVERALL LENGTH: 0.240 INCHES MINIMUM AND 0.290 INCHES MAXIMUM
OVERALL WIDTH: 0.120 INCHES MINIMUM AND 0.154 INCHES MAXIMUM
SPECIAL FEATURES: ALL TRANSISTOR JUNCTION PATTERN ARRANGEMENT: PNP
Related Searches:
1N4476
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961010758616
NSN
5961-01-075-8616
MFG
MICRO USPD INC
Description
CURRENT RATING PER CHARACTERISTIC: 0.48 AMPERES MAXIMUM PEAK REVERSE SURGE CURRENT
DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: JANTX1N4476
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: GLASS
MANUFACTURERS CODE: 81349
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 175.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
NON-DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: MIL-PRF-19500/406
OVERALL DIAMETER: 0.060 INCHES MINIMUM AND 0.085 INCHES MAXIMUM
OVERALL LENGTH: 0.125 INCHES MINIMUM AND 0.160 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 1.5 WATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPEC/STD CONTROLLING DATA:
SPECIFICATION/STANDARD DATA: 81349-MIL-S-19500/406 GOVERNMENT SPECIFICATION
TERMINAL LENGTH: 0.800 INCHES MINIMUM AND 1.300 INCHES MAXIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
TEST DATA DOCUMENT: 81349-MIL-S-19500 SPECIFICATION
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 30.0 MAXIMUM NOMINAL REGUL
Related Searches:
27908-02302
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961010758616
NSN
5961-01-075-8616
27908-02302
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961010758616
NSN
5961-01-075-8616
MFG
SQUARE D CO ELECTROMAGNETIC INDUSTRIES DIV
Description
CURRENT RATING PER CHARACTERISTIC: 0.48 AMPERES MAXIMUM PEAK REVERSE SURGE CURRENT
DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: JANTX1N4476
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: GLASS
MANUFACTURERS CODE: 81349
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 175.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
NON-DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: MIL-PRF-19500/406
OVERALL DIAMETER: 0.060 INCHES MINIMUM AND 0.085 INCHES MAXIMUM
OVERALL LENGTH: 0.125 INCHES MINIMUM AND 0.160 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 1.5 WATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPEC/STD CONTROLLING DATA:
SPECIFICATION/STANDARD DATA: 81349-MIL-S-19500/406 GOVERNMENT SPECIFICATION
TERMINAL LENGTH: 0.800 INCHES MINIMUM AND 1.300 INCHES MAXIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
TEST DATA DOCUMENT: 81349-MIL-S-19500 SPECIFICATION
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 30.0 MAXIMUM NOMINAL REGUL
Related Searches:
6083-1033
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961010758616
NSN
5961-01-075-8616
MFG
GENRAD INC
Description
CURRENT RATING PER CHARACTERISTIC: 0.48 AMPERES MAXIMUM PEAK REVERSE SURGE CURRENT
DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: JANTX1N4476
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: GLASS
MANUFACTURERS CODE: 81349
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 175.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
NON-DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: MIL-PRF-19500/406
OVERALL DIAMETER: 0.060 INCHES MINIMUM AND 0.085 INCHES MAXIMUM
OVERALL LENGTH: 0.125 INCHES MINIMUM AND 0.160 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 1.5 WATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPEC/STD CONTROLLING DATA:
SPECIFICATION/STANDARD DATA: 81349-MIL-S-19500/406 GOVERNMENT SPECIFICATION
TERMINAL LENGTH: 0.800 INCHES MINIMUM AND 1.300 INCHES MAXIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
TEST DATA DOCUMENT: 81349-MIL-S-19500 SPECIFICATION
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 30.0 MAXIMUM NOMINAL REGUL
Related Searches:
JAN1N4476
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961010758616
NSN
5961-01-075-8616
MFG
MILITARY SPECIFICATIONS PROMULGATED BY MILITARY DEPARTMENTS/AGENCIES UNDER AUTHORITY OF DEFENSE STANDARDIZATION MANUAL 4120 3-M
Description
CURRENT RATING PER CHARACTERISTIC: 0.48 AMPERES MAXIMUM PEAK REVERSE SURGE CURRENT
DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: JANTX1N4476
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: GLASS
MANUFACTURERS CODE: 81349
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 175.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
NON-DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: MIL-PRF-19500/406
OVERALL DIAMETER: 0.060 INCHES MINIMUM AND 0.085 INCHES MAXIMUM
OVERALL LENGTH: 0.125 INCHES MINIMUM AND 0.160 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 1.5 WATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPEC/STD CONTROLLING DATA:
SPECIFICATION/STANDARD DATA: 81349-MIL-S-19500/406 GOVERNMENT SPECIFICATION
TERMINAL LENGTH: 0.800 INCHES MINIMUM AND 1.300 INCHES MAXIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
TEST DATA DOCUMENT: 81349-MIL-S-19500 SPECIFICATION
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 30.0 MAXIMUM NOMINAL REGUL
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2N6240
SEMICONDUCTOR DEVICE,THYRISTOR
NSN, MFG P/N
5961010758617
NSN
5961-01-075-8617
2N6240
SEMICONDUCTOR DEVICE,THYRISTOR
NSN, MFG P/N
5961010758617
NSN
5961-01-075-8617
MFG
ELECTRONIC INDUSTRIES ASSOCIATION
Description
CURRENT RATING PER CHARACTERISTIC: 2.60 AMPERES MAXIMUM ON-STATE CURRENT, AVERAGE AND 500.00 MICROAMPERES MAXIMUM GATE TRIGGER CURRENT, DC
INCLOSURE MATERIAL: PLASTIC
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 110.0 DEG CELSIUS CASE
MOUNTING FACILITY QUANTITY: 1
MOUNTING METHOD: UNTHREADED HOLE
OVERALL HEIGHT: 0.070 INCHES MINIMUM AND 0.130 INCHES MAXIMUM
OVERALL LENGTH: 0.390 INCHES MINIMUM AND 0.450 INCHES MAXIMUM
OVERALL WIDTH: 0.270 INCHES MINIMUM AND 0.330 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
SPECIFICATION/STANDARD DATA: 80131-RELEASE6319 PROFESSIONAL/INDUSTRIAL ASSOCIATION SPECIFICATION
TERMINAL TYPE AND QUANTITY: 3 PIN
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 400.0 MAXIMUM OFF-STATE VOLTAGE, PEAK
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SM-A-949344-1
SEMICONDUCTOR DEVICE,THYRISTOR
NSN, MFG P/N
5961010759103
NSN
5961-01-075-9103
SM-A-949344-1
SEMICONDUCTOR DEVICE,THYRISTOR
NSN, MFG P/N
5961010759103
NSN
5961-01-075-9103
MFG
US ARMY COMMUNICATIONS & ELECTRONICS MATERIEL READINESS COMMAND LOGISTICS ENGINEERING DIR
Description
CURRENT RATING PER CHARACTERISTIC: 40.00 AMPERES MAXIMUM ON-STATE CURRENT, AVERAGE AND 100.00 MILLIAMPERES MAXIMUM GATE TRIGGER CURRENT, DC
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: TO-83
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 125.0 DEG CELSIUS JUNCTION
MOUNTING FACILITY QUANTITY: 1
MOUNTING METHOD: THREADED STUD
NOMINAL THREAD SIZE: 0.500 INCHES
OVERALL LENGTH: 1.810 INCHES MAXIMUM
OVERALL WIDTH ACROSS FLATS: 1.062 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 16.0 WATTS MAXIMUM PEAK GATE POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 1 THREADED STUD AND 2 TAB, SOLDER LUG
THREAD SERIES DESIGNATOR: UNF
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 800.0 MAXIMUM REPETITIVE PEAK REVERSE VOLTAGE
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T500084005AA
SEMICONDUCTOR DEVICE,THYRISTOR
NSN, MFG P/N
5961010759103
NSN
5961-01-075-9103
T500084005AA
SEMICONDUCTOR DEVICE,THYRISTOR
NSN, MFG P/N
5961010759103
NSN
5961-01-075-9103
MFG
WESTINGHOUSE ELECTRIC CORP SEMICONDUCTOR DIV
Description
CURRENT RATING PER CHARACTERISTIC: 40.00 AMPERES MAXIMUM ON-STATE CURRENT, AVERAGE AND 100.00 MILLIAMPERES MAXIMUM GATE TRIGGER CURRENT, DC
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: TO-83
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 125.0 DEG CELSIUS JUNCTION
MOUNTING FACILITY QUANTITY: 1
MOUNTING METHOD: THREADED STUD
NOMINAL THREAD SIZE: 0.500 INCHES
OVERALL LENGTH: 1.810 INCHES MAXIMUM
OVERALL WIDTH ACROSS FLATS: 1.062 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 16.0 WATTS MAXIMUM PEAK GATE POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 1 THREADED STUD AND 2 TAB, SOLDER LUG
THREAD SERIES DESIGNATOR: UNF
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 800.0 MAXIMUM REPETITIVE PEAK REVERSE VOLTAGE
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T500084005AB
SEMICONDUCTOR DEVICE,THYRISTOR
NSN, MFG P/N
5961010759103
NSN
5961-01-075-9103
T500084005AB
SEMICONDUCTOR DEVICE,THYRISTOR
NSN, MFG P/N
5961010759103
NSN
5961-01-075-9103
MFG
POWEREX INC
Description
CURRENT RATING PER CHARACTERISTIC: 40.00 AMPERES MAXIMUM ON-STATE CURRENT, AVERAGE AND 100.00 MILLIAMPERES MAXIMUM GATE TRIGGER CURRENT, DC
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: TO-83
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 125.0 DEG CELSIUS JUNCTION
MOUNTING FACILITY QUANTITY: 1
MOUNTING METHOD: THREADED STUD
NOMINAL THREAD SIZE: 0.500 INCHES
OVERALL LENGTH: 1.810 INCHES MAXIMUM
OVERALL WIDTH ACROSS FLATS: 1.062 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 16.0 WATTS MAXIMUM PEAK GATE POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 1 THREADED STUD AND 2 TAB, SOLDER LUG
THREAD SERIES DESIGNATOR: UNF
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 800.0 MAXIMUM REPETITIVE PEAK REVERSE VOLTAGE
Related Searches:
1N647
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961010759105
NSN
5961-01-075-9105
MFG
MICRO USPD INC
Description
CURRENT RATING PER CHARACTERISTIC: 400.00 MILLIAMPERES MAXIMUM AVERAGE FORWARD CURRENT AVERAGED OVER A FULL 60-HZ CYCLE
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: GLASS
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 150.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.055 INCHES MINIMUM AND 0.085 INCHES MAXIMUM
OVERALL LENGTH: 0.140 INCHES MINIMUM AND 0.300 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 0.6 WATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL LENGTH: 1.000 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
TEST DATA DOCUMENT: 96214-800124 DRAWING
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 480.0 MAXIMUM REVERSE VOLTAGE, DC AND 400.0 MAXIMUM WORKING PEAK REVERSE VOLTAGE, MAXIMUM PEAK TOTAL VALUE
Related Searches:
800124-2
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961010759105
NSN
5961-01-075-9105
MFG
RAYTHEON COMPANY
Description
CURRENT RATING PER CHARACTERISTIC: 400.00 MILLIAMPERES MAXIMUM AVERAGE FORWARD CURRENT AVERAGED OVER A FULL 60-HZ CYCLE
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: GLASS
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 150.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.055 INCHES MINIMUM AND 0.085 INCHES MAXIMUM
OVERALL LENGTH: 0.140 INCHES MINIMUM AND 0.300 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 0.6 WATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL LENGTH: 1.000 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
TEST DATA DOCUMENT: 96214-800124 DRAWING
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 480.0 MAXIMUM REVERSE VOLTAGE, DC AND 400.0 MAXIMUM WORKING PEAK REVERSE VOLTAGE, MAXIMUM PEAK TOTAL VALUE
Related Searches:
351734
SEMICONDUCTOR DEVICE ASSEMBLY
NSN, MFG P/N
5961010759161
NSN
5961-01-075-9161
MFG
FLUKE CORPORATION
Description
MAJOR COMPONENTS: DIODE 2; TUBE ISOLATOR 1; EPOXY EXTRA FAST SETTING 1
Related Searches:
SA7297
SEMICONDUCTOR DEVICES,UNITIZED
NSN, MFG P/N
5961010759188
NSN
5961-01-075-9188
SA7297
SEMICONDUCTOR DEVICES,UNITIZED
NSN, MFG P/N
5961010759188
NSN
5961-01-075-9188
MFG
SEMTECH CORPORATION
Description
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: GLASS OR METAL
Related Searches:
SPA-V-30301
SEMICONDUCTOR DEVICES,UNITIZED
NSN, MFG P/N
5961010759188
NSN
5961-01-075-9188
SPA-V-30301
SEMICONDUCTOR DEVICES,UNITIZED
NSN, MFG P/N
5961010759188
NSN
5961-01-075-9188
MFG
RAYTHEON TECHNICAL SERVICES COMPANY LLC DBA RAYTHEON
Description
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: GLASS OR METAL
Related Searches:
932167-1
SEMICONDUCTOR DEVICES,UNITIZED
NSN, MFG P/N
5961010759195
NSN
5961-01-075-9195
932167-1
SEMICONDUCTOR DEVICES,UNITIZED
NSN, MFG P/N
5961010759195
NSN
5961-01-075-9195
MFG
NORTHROP GRUMMAN GUIDANCE AND ELECTRONICS COMPANY INC. DBA NAVIGATION SYSTEMS DIVISION DIV NAVIGATION SYSTEMS DIVISION
Description
COMPONENT NAME AND QUANTITY: 4 TRANSISTOR
CURRENT RATING PER CHARACTERISTIC: 1.00 AMPERES MAXIMUM COLLECTOR CURRENT, DC ALL TRANSISTOR
INCLOSURE MATERIAL: CERAMIC
MOUNTING METHOD: TERMINAL
OVERALL HEIGHT: 0.070 INCHES MAXIMUM
OVERALL LENGTH: 0.270 INCHES MAXIMUM
OVERALL WIDTH: 0.270 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON ALL TRANSISTOR
SPECIAL FEATURES: ALL TRANSISTOR JUNCTION PATTERN ARRANGEMENT: PNP
TERMINAL TYPE AND QUANTITY: 14 PIN
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 40.0 MAXIMUM COLLECTOR TO BASE VOLTAGE, DC AND 40.0 MAXIMUM COLLECTOR TO BASE VOLTAGE, DC AND 5.0 MAXIMUM EMITTER TO BASE VOLTAGE, DC ALL TRANSISTOR
Related Searches:
CSP122
SEMICONDUCTOR DEVICES,UNITIZED
NSN, MFG P/N
5961010759195
NSN
5961-01-075-9195
CSP122
SEMICONDUCTOR DEVICES,UNITIZED
NSN, MFG P/N
5961010759195
NSN
5961-01-075-9195
MFG
CRYSTALONICS INC.
Description
COMPONENT NAME AND QUANTITY: 4 TRANSISTOR
CURRENT RATING PER CHARACTERISTIC: 1.00 AMPERES MAXIMUM COLLECTOR CURRENT, DC ALL TRANSISTOR
INCLOSURE MATERIAL: CERAMIC
MOUNTING METHOD: TERMINAL
OVERALL HEIGHT: 0.070 INCHES MAXIMUM
OVERALL LENGTH: 0.270 INCHES MAXIMUM
OVERALL WIDTH: 0.270 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON ALL TRANSISTOR
SPECIAL FEATURES: ALL TRANSISTOR JUNCTION PATTERN ARRANGEMENT: PNP
TERMINAL TYPE AND QUANTITY: 14 PIN
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 40.0 MAXIMUM COLLECTOR TO BASE VOLTAGE, DC AND 40.0 MAXIMUM COLLECTOR TO BASE VOLTAGE, DC AND 5.0 MAXIMUM EMITTER TO BASE VOLTAGE, DC ALL TRANSISTOR
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MQ3467
SEMICONDUCTOR DEVICES,UNITIZED
NSN, MFG P/N
5961010759195
NSN
5961-01-075-9195
MQ3467
SEMICONDUCTOR DEVICES,UNITIZED
NSN, MFG P/N
5961010759195
NSN
5961-01-075-9195
MFG
FREESCALE SEMICONDUCTOR INC.
Description
COMPONENT NAME AND QUANTITY: 4 TRANSISTOR
CURRENT RATING PER CHARACTERISTIC: 1.00 AMPERES MAXIMUM COLLECTOR CURRENT, DC ALL TRANSISTOR
INCLOSURE MATERIAL: CERAMIC
MOUNTING METHOD: TERMINAL
OVERALL HEIGHT: 0.070 INCHES MAXIMUM
OVERALL LENGTH: 0.270 INCHES MAXIMUM
OVERALL WIDTH: 0.270 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON ALL TRANSISTOR
SPECIAL FEATURES: ALL TRANSISTOR JUNCTION PATTERN ARRANGEMENT: PNP
TERMINAL TYPE AND QUANTITY: 14 PIN
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 40.0 MAXIMUM COLLECTOR TO BASE VOLTAGE, DC AND 40.0 MAXIMUM COLLECTOR TO BASE VOLTAGE, DC AND 5.0 MAXIMUM EMITTER TO BASE VOLTAGE, DC ALL TRANSISTOR
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NSQ1043
SEMICONDUCTOR DEVICES,UNITIZED
NSN, MFG P/N
5961010759195
NSN
5961-01-075-9195
NSQ1043
SEMICONDUCTOR DEVICES,UNITIZED
NSN, MFG P/N
5961010759195
NSN
5961-01-075-9195
MFG
MICROSEMI CORP. - MASSACHUSETTS DBA MICROSEMI-LAWRENCE DIV MICROSEMI CORPORATION
Description
COMPONENT NAME AND QUANTITY: 4 TRANSISTOR
CURRENT RATING PER CHARACTERISTIC: 1.00 AMPERES MAXIMUM COLLECTOR CURRENT, DC ALL TRANSISTOR
INCLOSURE MATERIAL: CERAMIC
MOUNTING METHOD: TERMINAL
OVERALL HEIGHT: 0.070 INCHES MAXIMUM
OVERALL LENGTH: 0.270 INCHES MAXIMUM
OVERALL WIDTH: 0.270 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON ALL TRANSISTOR
SPECIAL FEATURES: ALL TRANSISTOR JUNCTION PATTERN ARRANGEMENT: PNP
TERMINAL TYPE AND QUANTITY: 14 PIN
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 40.0 MAXIMUM COLLECTOR TO BASE VOLTAGE, DC AND 40.0 MAXIMUM COLLECTOR TO BASE VOLTAGE, DC AND 5.0 MAXIMUM EMITTER TO BASE VOLTAGE, DC ALL TRANSISTOR
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SA2413
SEMICONDUCTOR DEVICES,UNITIZED
NSN, MFG P/N
5961010759195
NSN
5961-01-075-9195
SA2413
SEMICONDUCTOR DEVICES,UNITIZED
NSN, MFG P/N
5961010759195
NSN
5961-01-075-9195
MFG
FAIRCHILD SEMICONDUCTOR CORP SEMICONDUCTOR DIV HQ
Description
COMPONENT NAME AND QUANTITY: 4 TRANSISTOR
CURRENT RATING PER CHARACTERISTIC: 1.00 AMPERES MAXIMUM COLLECTOR CURRENT, DC ALL TRANSISTOR
INCLOSURE MATERIAL: CERAMIC
MOUNTING METHOD: TERMINAL
OVERALL HEIGHT: 0.070 INCHES MAXIMUM
OVERALL LENGTH: 0.270 INCHES MAXIMUM
OVERALL WIDTH: 0.270 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON ALL TRANSISTOR
SPECIAL FEATURES: ALL TRANSISTOR JUNCTION PATTERN ARRANGEMENT: PNP
TERMINAL TYPE AND QUANTITY: 14 PIN
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 40.0 MAXIMUM COLLECTOR TO BASE VOLTAGE, DC AND 40.0 MAXIMUM COLLECTOR TO BASE VOLTAGE, DC AND 5.0 MAXIMUM EMITTER TO BASE VOLTAGE, DC ALL TRANSISTOR
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SQ2531
SEMICONDUCTOR DEVICES,UNITIZED
NSN, MFG P/N
5961010759195
NSN
5961-01-075-9195
SQ2531
SEMICONDUCTOR DEVICES,UNITIZED
NSN, MFG P/N
5961010759195
NSN
5961-01-075-9195
MFG
TEXAS INSTRUMENTS INCORPORATED DBA TEXAS INSTRUMENTS DIV SEMICONDUCTOR GROUP
Description
COMPONENT NAME AND QUANTITY: 4 TRANSISTOR
CURRENT RATING PER CHARACTERISTIC: 1.00 AMPERES MAXIMUM COLLECTOR CURRENT, DC ALL TRANSISTOR
INCLOSURE MATERIAL: CERAMIC
MOUNTING METHOD: TERMINAL
OVERALL HEIGHT: 0.070 INCHES MAXIMUM
OVERALL LENGTH: 0.270 INCHES MAXIMUM
OVERALL WIDTH: 0.270 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON ALL TRANSISTOR
SPECIAL FEATURES: ALL TRANSISTOR JUNCTION PATTERN ARRANGEMENT: PNP
TERMINAL TYPE AND QUANTITY: 14 PIN
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 40.0 MAXIMUM COLLECTOR TO BASE VOLTAGE, DC AND 40.0 MAXIMUM COLLECTOR TO BASE VOLTAGE, DC AND 5.0 MAXIMUM EMITTER TO BASE VOLTAGE, DC ALL TRANSISTOR
