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5961-01-107-9461
20 Products
GC10200-30
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961011079461
NSN
5961-01-107-9461
GC10200-30
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961011079461
NSN
5961-01-107-9461
MFG
MICROSEMI CORP-MASSACHUSETTS DBA MICROSEMI-LOWELL DIV MICROSEMI - LOWELL
Description
SEMICONDUCTOR DEVICE,DIODE
Related Searches:
8200011
SEMICONDUCTOR DEVICE,THYRISTOR
NSN, MFG P/N
5961011079560
NSN
5961-01-107-9560
8200011
SEMICONDUCTOR DEVICE,THYRISTOR
NSN, MFG P/N
5961011079560
NSN
5961-01-107-9560
MFG
UNIVOX-CALIFORNIA
Description
CURRENT RATING PER CHARACTERISTIC: 2.50 AMPERES NOMINAL ON-STATE CURRENT, AVERAGE AND 4.00 AMPERES NOMINAL ON-STATE CURRENT, RMS TOTAL AND 2.75 AMPERES NOMINAL ON-STATE CURRENT, DC
INCLOSURE MATERIAL: PLASTIC
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 150.0 DEG CELSIUS AMBIENT AIR
MOUNTING FACILITY QUANTITY: 1
MOUNTING METHOD: UNTHREADED HOLE
OVERALL LENGTH: 0.363 INCHES NOMINAL
OVERALL WIDTH: 0.408 INCHES NOMINAL
POWER RATING PER CHARACTERISTIC: 0.5 WATTS MAXIMUM PEAK GATE POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: ONE INSULATOR AND ONE WASHER INCLUDED
TERMINAL TYPE AND QUANTITY: 3 TAB, SOLDER LUG
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 75.0 NOMINAL NONREPETITIVE PEAK REVERSE VOLTAGE AND 50.0 NOMINAL REPETITIVE PEAK REVERSE VOLTAGE
Related Searches:
S2060F
SEMICONDUCTOR DEVICE,THYRISTOR
NSN, MFG P/N
5961011079560
NSN
5961-01-107-9560
S2060F
SEMICONDUCTOR DEVICE,THYRISTOR
NSN, MFG P/N
5961011079560
NSN
5961-01-107-9560
MFG
INTERSIL CORPORATION
Description
CURRENT RATING PER CHARACTERISTIC: 2.50 AMPERES NOMINAL ON-STATE CURRENT, AVERAGE AND 4.00 AMPERES NOMINAL ON-STATE CURRENT, RMS TOTAL AND 2.75 AMPERES NOMINAL ON-STATE CURRENT, DC
INCLOSURE MATERIAL: PLASTIC
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 150.0 DEG CELSIUS AMBIENT AIR
MOUNTING FACILITY QUANTITY: 1
MOUNTING METHOD: UNTHREADED HOLE
OVERALL LENGTH: 0.363 INCHES NOMINAL
OVERALL WIDTH: 0.408 INCHES NOMINAL
POWER RATING PER CHARACTERISTIC: 0.5 WATTS MAXIMUM PEAK GATE POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: ONE INSULATOR AND ONE WASHER INCLUDED
TERMINAL TYPE AND QUANTITY: 3 TAB, SOLDER LUG
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 75.0 NOMINAL NONREPETITIVE PEAK REVERSE VOLTAGE AND 50.0 NOMINAL REPETITIVE PEAK REVERSE VOLTAGE
Related Searches:
1B40K05
RECTIFIER
NSN, MFG P/N
5961011079789
NSN
5961-01-107-9789
MFG
RAYTHEON SYSTEMS LTD WEAPONS SUPPORT GROUP
Description
RECTIFIER
Related Searches:
5SB05
RECTIFIER
NSN, MFG P/N
5961011079806
NSN
5961-01-107-9806
MFG
RADIALL LIMITED
Description
RECTIFIER
Related Searches:
5SB10
RECTIFIER
NSN, MFG P/N
5961011079806
NSN
5961-01-107-9806
MFG
DLA LAND AND MARITIME
Description
RECTIFIER
Related Searches:
ZTX301
TRANSISTOR
NSN, MFG P/N
5961011079946
NSN
5961-01-107-9946
MFG
ZETEX PLC
Description
TRANSISTOR
Related Searches:
ZTX501
TRANSISTOR
NSN, MFG P/N
5961011079947
NSN
5961-01-107-9947
MFG
ZETEX PLC
Description
TRANSISTOR
Related Searches:
15-133
TRANSISTOR
NSN, MFG P/N
5961011079948
NSN
5961-01-107-9948
MFG
N H RESEARCH INCORPORATED
Description
TRANSISTOR
Related Searches:
507780
TRANSISTOR
NSN, MFG P/N
5961011080168
NSN
5961-01-108-0168
MFG
FLUKE CORPORATION
Description
(NON-CORE DATA) CHANNEL POLARITY AND CONTROL TYPE: N-CHANNEL JUNCTION TYPE
CURRENT RATING PER CHARACTERISTIC: 10.00 MILLIAMPERES MAXIMUM GATE CURRENT
INCLOSURE MATERIAL: PLASTIC
INTERNAL CONFIGURATION: FIELD EFFECT
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 135.0 DEG CELSIUS JUNCTION
MOUNTING METHOD: TERMINAL
OVERALL LENGTH: 0.188 INCHES NOMINAL
POWER RATING PER CHARACTERISTIC: 310.0 MILLIWATTS MAXIMUM TOTAL DEVICE DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL LENGTH: 0.500 INCHES NOMINAL
TERMINAL TYPE AND QUANTITY: 3 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 25.0 MAXIMUM DRAIN TO GATE VOLTAGE AND 25.0 MAXIMUM GATE TO SOURCE VOLTAGE
Related Searches:
52815600A
TRANSISTOR
NSN, MFG P/N
5961011080168
NSN
5961-01-108-0168
MFG
BOONTON ELECTRONICS CORPORATION DBA ALLTEL
Description
(NON-CORE DATA) CHANNEL POLARITY AND CONTROL TYPE: N-CHANNEL JUNCTION TYPE
CURRENT RATING PER CHARACTERISTIC: 10.00 MILLIAMPERES MAXIMUM GATE CURRENT
INCLOSURE MATERIAL: PLASTIC
INTERNAL CONFIGURATION: FIELD EFFECT
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 135.0 DEG CELSIUS JUNCTION
MOUNTING METHOD: TERMINAL
OVERALL LENGTH: 0.188 INCHES NOMINAL
POWER RATING PER CHARACTERISTIC: 310.0 MILLIWATTS MAXIMUM TOTAL DEVICE DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL LENGTH: 0.500 INCHES NOMINAL
TERMINAL TYPE AND QUANTITY: 3 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 25.0 MAXIMUM DRAIN TO GATE VOLTAGE AND 25.0 MAXIMUM GATE TO SOURCE VOLTAGE
Related Searches:
J108
TRANSISTOR
NSN, MFG P/N
5961011080168
NSN
5961-01-108-0168
MFG
SILICONIX INCORPORATED D IV SILICONIX
Description
(NON-CORE DATA) CHANNEL POLARITY AND CONTROL TYPE: N-CHANNEL JUNCTION TYPE
CURRENT RATING PER CHARACTERISTIC: 10.00 MILLIAMPERES MAXIMUM GATE CURRENT
INCLOSURE MATERIAL: PLASTIC
INTERNAL CONFIGURATION: FIELD EFFECT
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 135.0 DEG CELSIUS JUNCTION
MOUNTING METHOD: TERMINAL
OVERALL LENGTH: 0.188 INCHES NOMINAL
POWER RATING PER CHARACTERISTIC: 310.0 MILLIWATTS MAXIMUM TOTAL DEVICE DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL LENGTH: 0.500 INCHES NOMINAL
TERMINAL TYPE AND QUANTITY: 3 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 25.0 MAXIMUM DRAIN TO GATE VOLTAGE AND 25.0 MAXIMUM GATE TO SOURCE VOLTAGE
Related Searches:
JANTXV1N945B
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961011080170
NSN
5961-01-108-0170
JANTXV1N945B
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961011080170
NSN
5961-01-108-0170
MFG
MILITARY SPECIFICATIONS PROMULGATED BY MILITARY DEPARTMENTS/AGENCIES UNDER AUTHORITY OF DEFENSE STANDARDIZATION MANUAL 4120 3-M
Description
CURRENT RATING PER CHARACTERISTIC: 45.00 MILLIAMPERES MAXIMUM VOLTAGE REGULATOR DIODE CURRENT
DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: JANTXV1N945B
FEATURES PROVIDED: HERMETICALLY SEALED CASE
III PRECIOUS MATERIAL: GOLD
III PRECIOUS MATERIAL AND LOCATION: LEADS GOLD
INCLOSURE MATERIAL: GLASS
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: DO-7
MANUFACTURERS CODE: 81349
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 175.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
NON-DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: MIL-PRF-19500/157
OVERALL DIAMETER: 0.130 INCHES MAXIMUM
OVERALL LENGTH: 0.300 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 500.0 MILLIWATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPEC/STD CONTROLLING DATA:
SPECIFICATION/STANDARD DATA: 81349-MIL-S-19500/157 GOVERNMENT SPECIFICATION
TERMINAL LENGTH: 1.000 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
TEST DATA DOCUME
Related Searches:
JANTXV1N4624
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961011080171
NSN
5961-01-108-0171
JANTXV1N4624
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961011080171
NSN
5961-01-108-0171
MFG
MILITARY SPECIFICATIONS PROMULGATED BY MILITARY DEPARTMENTS/AGENCIES UNDER AUTHORITY OF DEFENSE STANDARDIZATION MANUAL 4120 3-M
Description
CURRENT RATING PER CHARACTERISTIC: 81.00 MILLIAMPERES MAXIMUM MAXIMUM DC CURRENT IN REVERSE BREAKDOWN REGION
DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: JANTXV1N4624
FEATURES PROVIDED: HERMETICALLY SEALED CASE
III PRECIOUS MATERIAL: GOLD
III PRECIOUS MATERIAL AND LOCATION: LEADS GOLD
INCLOSURE MATERIAL: GLASS
MANUFACTURERS CODE: 81349
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 175.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
NON-DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: MIL-S-19500/435
OVERALL DIAMETER: 0.130 INCHES MAXIMUM
OVERALL LENGTH: 0.300 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 400.0 MILLIWATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPEC/STD CONTROLLING DATA:
SPECIFICATION/STANDARD DATA: 81349-MIL-S-19500/435 GOVERNMENT SPECIFICATION
TERMINAL LENGTH: 1.000 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
TEST DATA DOCUMENT: 81349-MIL-S-19500 SPECIFICATION
VOLTAGE RATING IN VOLTS PER CHAR
Related Searches:
JAN1N6046A
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961011080172
NSN
5961-01-108-0172
JAN1N6046A
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961011080172
NSN
5961-01-108-0172
MFG
MILITARY SPECIFICATIONS PROMULGATED BY MILITARY DEPARTMENTS/AGENCIES UNDER AUTHORITY OF DEFENSE STANDARDIZATION MANUAL 4120 3-M
Description
CURRENT RATING PER CHARACTERISTIC: 1.00 AMPERES MAXIMUM VOLTAGE REGULATOR DIODE CURRENT
DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: JAN1N6046A
ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE: CATHODE
FEATURES PROVIDED: HERMETICALLY SEALED CASE
III PRECIOUS MATERIAL: GOLD
III PRECIOUS MATERIAL AND LOCATION: LEADS GOLD
INCLOSURE MATERIAL: GLASS
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: DO-13
MANUFACTURERS CODE: 81349
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 175.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
NON-DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: MIL-PRF-19500/507
OVERALL DIAMETER: 0.235 INCHES MAXIMUM
OVERALL LENGTH: 0.357 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 1.0 WATTS MAXIMUM REVERSE POWER DISSIPATION, DC
SEMICONDUCTOR MATERIAL: SILICON
SPEC/STD CONTROLLING DATA:
SPECIFICATION/STANDARD DATA: 81349-MIL-S-19500/507 GOVERNMENT SPECIFICATION
TERMINAL LENGTH: 1.000 INCHES MINIMUM
TERMINAL TYPE A
Related Searches:
6133723-1
RECTIFIER,SEMICONDUCTOR DEVICE,UNITIZED
NSN, MFG P/N
5961011080276
NSN
5961-01-108-0276
6133723-1
RECTIFIER,SEMICONDUCTOR DEVICE,UNITIZED
NSN, MFG P/N
5961011080276
NSN
5961-01-108-0276
MFG
LOCKHEED MARTIN CORPORATION DBA MISSION SYSTEMS & SENSORS
Description
ABSOLUTE MAXIMUM CURRENT RATING PER CHARACTERISTIC: 4.00 AMPERES AVERAGE FORWARD CURRENT AVERAGED OVER A FULL 60-HZ CYCLE
ABSOLUTE MAXIMUM VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 600.0 PEAK INVERSE VOLTAGE
MATERIAL: SILICON
MOUNTING METHOD: UNTHREADED HOLE
OPERATING TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
OVERALL HEIGHT: 0.600 INCHES MAXIMUM
OVERALL LENGTH: 2.250 INCHES NOMINAL
OVERALL WIDTH: 0.344 INCHES NOMINAL
TERMINAL TYPE AND QUANTITY: 3 WIRE HOOK
Related Searches:
655-724
RECTIFIER,SEMICONDUCTOR DEVICE,UNITIZED
NSN, MFG P/N
5961011080276
NSN
5961-01-108-0276
655-724
RECTIFIER,SEMICONDUCTOR DEVICE,UNITIZED
NSN, MFG P/N
5961011080276
NSN
5961-01-108-0276
MFG
MICRO USPD INC
Description
ABSOLUTE MAXIMUM CURRENT RATING PER CHARACTERISTIC: 4.00 AMPERES AVERAGE FORWARD CURRENT AVERAGED OVER A FULL 60-HZ CYCLE
ABSOLUTE MAXIMUM VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 600.0 PEAK INVERSE VOLTAGE
MATERIAL: SILICON
MOUNTING METHOD: UNTHREADED HOLE
OPERATING TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
OVERALL HEIGHT: 0.600 INCHES MAXIMUM
OVERALL LENGTH: 2.250 INCHES NOMINAL
OVERALL WIDTH: 0.344 INCHES NOMINAL
TERMINAL TYPE AND QUANTITY: 3 WIRE HOOK
Related Searches:
JAN1N4557B
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961011080492
NSN
5961-01-108-0492
JAN1N4557B
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961011080492
NSN
5961-01-108-0492
MFG
MILITARY SPECIFICATIONS PROMULGATED BY MILITARY DEPARTMENTS/AGENCIES UNDER AUTHORITY OF DEFENSE STANDARDIZATION MANUAL 4120 3-M
Description
CURRENT RATING PER CHARACTERISTIC: 10.00 AMPERES MAXIMUM VOLTAGE REGULATOR DIODE CURRENT
DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: JANTX1N4557B
FEATURES PROVIDED: HERMETICALLY SEALED CASE
FUNCTION FOR WHICH DESIGNED: VOLTAGE REGULATOR
INCLOSURE MATERIAL: METAL
MANUFACTURERS CODE: 81349
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 150.0 DEG CELSIUS JUNCTION
MOUNTING FACILITY QUANTITY: 2
MOUNTING METHOD: UNTHREADED HOLE
NON-DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: MIL-PRF-19500/114
OVERALL HEIGHT: 0.250 INCHES MINIMUM AND 0.450 INCHES MAXIMUM
OVERALL LENGTH: 1.573 INCHES MAXIMUM
OVERALL WIDTH: 1.050 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 50.0 WATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPEC/STD CONTROLLING DATA:
SPECIFICATION/STANDARD DATA: 81349-MIL-S-19500/114 GOVERNMENT SPECIFICATION
TERMINAL TYPE AND QUANTITY: 2 PIN
TEST DATA DOCUMENT: 81349-MIL-S-19500 SPECIFICATION
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 3.9
Related Searches:
9000461-01
TRANSISTOR
NSN, MFG P/N
5961011081213
NSN
5961-01-108-1213
MFG
U S DEPT OF TRANSPORTATION FEDERAL AVIATION ADMINISTRATION
Description
DESIGN CONTROL REFERENCE: 9000461-01
III END ITEM IDENTIFICATION: AUTOMATED RADAR TERMINAL SYSTEM 3A (ARTS3A)
INCLOSURE MATERIAL: METAL
MANUFACTURERS CODE: 08125
MOUNTING METHOD: UNTHREADED HOLE
OVERALL DIAMETER: 0.875 INCHES MAXIMUM
OVERALL LENGTH: 0.375 INCHES NOMINAL
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD AND 1 CASE
THE MANUFACTURERS DATA:
Related Searches:
675-12386-601
SEMICONDUCTOR DEVICE ASSEMBLY
NSN, MFG P/N
5961011081366
NSN
5961-01-108-1366
675-12386-601
SEMICONDUCTOR DEVICE ASSEMBLY
NSN, MFG P/N
5961011081366
NSN
5961-01-108-1366
MFG
THE BOEING COMPANY DBA BOEING
Description
DESIGN CONTROL REFERENCE: 675-12386-601
III END ITEM IDENTIFICATION: B-52GH
MAJOR COMPONENTS: DIODE 9; MTG BD 1
MANUFACTURERS CODE: 82918
THE MANUFACTURERS DATA:
