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5961-01-110-9668
20 Products
1900-0026
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961011109668
NSN
5961-01-110-9668
MFG
AVAGO TECHNOLOGIES U.S. INC. DIV AVAGO TECHNOLOGIES
Description
CAPACITANCE RATING IN PICOFARADS: 1.0 MAXIMUM
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 150.0 MINIMUM BREAKDOWN VOLTAGE, INSTANTANEOUS
Related Searches:
QPND-4465
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961011109668
NSN
5961-01-110-9668
MFG
HEWLETT-PACKARD CO COMMUNICATIONS COMPONENTS/AVANTEK DIV
Description
CAPACITANCE RATING IN PICOFARADS: 1.0 MAXIMUM
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 150.0 MINIMUM BREAKDOWN VOLTAGE, INSTANTANEOUS
Related Searches:
JANTX1N6066A
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961011109851
NSN
5961-01-110-9851
JANTX1N6066A
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961011109851
NSN
5961-01-110-9851
MFG
MILITARY SPECIFICATIONS PROMULGATED BY MILITARY DEPARTMENTS/AGENCIES UNDER AUTHORITY OF DEFENSE STANDARDIZATION MANUAL 4120 3-M
Description
CURRENT RATING PER CHARACTERISTIC: 1.00 MILLIAMPERES MAXIMUM VOLTAGE REGULATOR DIODE CURRENT
DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: JANTX1N6066A
ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE: CATHODE
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: GLASS
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: DO-13
MANUFACTURERS CODE: 81349
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 175.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
NON-DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: MIL-PRF-19500/507
OVERALL DIAMETER: 0.235 INCHES MAXIMUM
OVERALL LENGTH: 0.357 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 1.0 WATTS MAXIMUM REVERSE POWER DISSIPATION, DC
SEMICONDUCTOR MATERIAL: SILICON
SPEC/STD CONTROLLING DATA:
SPECIFICATION/STANDARD DATA: 81349-MIL-S-19500/507 GOVERNMENT SPECIFICATION
TERMINAL LENGTH: 1.000 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
TEST DATA DOCUMENT: 81349-MIL-S-19
Related Searches:
D5282GMR
SEMICONDUCTOR DEVICE SET
NSN, MFG P/N
5961011109954
NSN
5961-01-110-9954
MFG
SKYWORKS SOLUTIONS INC.
Description
COMPONENT FUNCTION RELATIONSHIP: MATCHED
COMPONENT NAME AND QUANTITY: 2 SEMICONDUCTOR DEVICE DIODE
Related Searches:
UX5282GMR
SEMICONDUCTOR DEVICE SET
NSN, MFG P/N
5961011109954
NSN
5961-01-110-9954
MFG
MICROMETRICS INC
Description
COMPONENT FUNCTION RELATIONSHIP: MATCHED
COMPONENT NAME AND QUANTITY: 2 SEMICONDUCTOR DEVICE DIODE
Related Searches:
1N4603R
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961011110775
NSN
5961-01-111-0775
MFG
SEMI-GENERAL INC .
Description
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: GLASS AND CERAMIC
MOUNTING METHOD: PRESS FIT
OVERALL DIAMETER: 0.215 INCHES MINIMUM AND 0.220 INCHES MAXIMUM
OVERALL LENGTH: 0.735 INCHES MINIMUM AND 0.765 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: KU FREQUENCY BAND; 201-JAN HOLDER; BASIC TYPE NO. 1N4603; REVERSE POLARITY; JUNCTION PATTERN ARRANGEMENT: PN
TERMINAL TYPE AND QUANTITY: 1 CASE AND 1 PIN
Related Searches:
353-6591-020
SEMICONDUCTOR DEVIC
NSN, MFG P/N
5961011111022
NSN
5961-01-111-1022
MFG
ROCKWELL COLLINS INC. DBA GOVERNMENT SYSTEMS DIV GOVERNMENT SYSTEMS
Description
SEMICONDUCTOR DEVIC
Related Searches:
SS3902
SEMICONDUCTOR DEVIC
NSN, MFG P/N
5961011111022
NSN
5961-01-111-1022
MFG
SEMTECH CORPORATION
Description
SEMICONDUCTOR DEVIC
Related Searches:
UTG1768
SEMICONDUCTOR DEVIC
NSN, MFG P/N
5961011111022
NSN
5961-01-111-1022
MFG
MICRO USPD INC
Description
SEMICONDUCTOR DEVIC
Related Searches:
Q2T3244
TRANSISTOR
NSN, MFG P/N
5961011111119
NSN
5961-01-111-1119
MFG
U S DEPT OF TRANSPORTATION FEDERAL AVIATION ADMINISTRATION
Description
III END ITEM IDENTIFICATION: COMMON DIGITIZER 2A (CD2A)
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 150.0 DEG CELSIUS AMBIENT AIR
OVERALL HEIGHT: 0.200 INCHES MAXIMUM
OVERALL LENGTH: 0.770 INCHES NOMINAL
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: PNP
TERMINAL TYPE AND QUANTITY: 14 PIN
Related Searches:
BFX39
TRANSISTOR
NSN, MFG P/N
5961011111120
NSN
5961-01-111-1120
MFG
FAIRCHILD SEMICONDUCTOR CORP
Description
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.305 INCHES MINIMUM AND 0.335 INCHES MAXIMUM
OVERALL LENGTH: 0.240 INCHES MINIMUM AND 0.260 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 800.0 MILLIWATTS MAXIMUM COLLECTOR POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: PNP
TERMINAL CIRCLE DIAMETER: 0.100 INCHES NOMINAL
TERMINAL LENGTH: 1.500 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 3 UNINSULATED WIRE LEAD
Related Searches:
0PB710
SENSOR,REFLECTIVE
NSN, MFG P/N
5961011111123
NSN
5961-01-111-1123
MFG
OPTEK TECHNOLOGY INC
Description
GENERAL CHARACTERISTICS ITEM DESCRIPTION: PLASTIC CASE; CONTAINS A SILICON ARSENIDE INFRARED LED WITH AN NPN SILICON PHOTOSENSOR; 0.160 IN. LG; 0.220 IN. DIA; 4 LEADS
Related Searches:
85-650-560-0
SENSOR,REFLECTIVE
NSN, MFG P/N
5961011111123
NSN
5961-01-111-1123
MFG
GRAHAM MAGNETICS INC
Description
GENERAL CHARACTERISTICS ITEM DESCRIPTION: PLASTIC CASE; CONTAINS A SILICON ARSENIDE INFRARED LED WITH AN NPN SILICON PHOTOSENSOR; 0.160 IN. LG; 0.220 IN. DIA; 4 LEADS
Related Searches:
310046
TRANSISTOR
NSN, MFG P/N
5961011111233
NSN
5961-01-111-1233
MFG
DATRON WORLD COMMUNICATIONS INC.
Description
(NON-CORE DATA) CHANNEL POLARITY AND CONTROL TYPE: N-CHANNEL JUNCTION TYPE
CURRENT RATING PER CHARACTERISTIC: 60.00 MILLIAMPERES NOMINAL ZERO-GATE-VOLTAGE DRAIN CURRENT
INCLOSURE MATERIAL: PLASTIC
INTERNAL CONFIGURATION: FIELD EFFECT
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: TO-92
MOUNTING METHOD: TERMINAL
OVERALL HEIGHT: 0.125 INCHES MINIMUM AND 0.165 INCHES MAXIMUM
OVERALL LENGTH: 0.170 INCHES MINIMUM AND 0.210 INCHES MAXIMUM
OVERALL WIDTH: 0.175 INCHES MINIMUM AND 0.205 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 360.0 MILLIWATTS MAXIMUM TOTAL DEVICE DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL LENGTH: 0.500 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 40.0 NOMINAL BREAKDOWN VOLTAGE, GATE-TO-SOURCE, WITH ALL OTHER TERMINALS SHORT-CIRCUITED TO SOURCE AND 3.0 MAXIMUM GATE TO SOURCE CUTOFF VOLTAGE
Related Searches:
MPF4393
TRANSISTOR
NSN, MFG P/N
5961011111233
NSN
5961-01-111-1233
MFG
FREESCALE SEMICONDUCTOR INC.
Description
(NON-CORE DATA) CHANNEL POLARITY AND CONTROL TYPE: N-CHANNEL JUNCTION TYPE
CURRENT RATING PER CHARACTERISTIC: 60.00 MILLIAMPERES NOMINAL ZERO-GATE-VOLTAGE DRAIN CURRENT
INCLOSURE MATERIAL: PLASTIC
INTERNAL CONFIGURATION: FIELD EFFECT
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: TO-92
MOUNTING METHOD: TERMINAL
OVERALL HEIGHT: 0.125 INCHES MINIMUM AND 0.165 INCHES MAXIMUM
OVERALL LENGTH: 0.170 INCHES MINIMUM AND 0.210 INCHES MAXIMUM
OVERALL WIDTH: 0.175 INCHES MINIMUM AND 0.205 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 360.0 MILLIWATTS MAXIMUM TOTAL DEVICE DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL LENGTH: 0.500 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 40.0 NOMINAL BREAKDOWN VOLTAGE, GATE-TO-SOURCE, WITH ALL OTHER TERMINALS SHORT-CIRCUITED TO SOURCE AND 3.0 MAXIMUM GATE TO SOURCE CUTOFF VOLTAGE
Related Searches:
PN4393
TRANSISTOR
NSN, MFG P/N
5961011111233
NSN
5961-01-111-1233
MFG
NATIONAL SEMICONDUCTOR CORPORATION
Description
(NON-CORE DATA) CHANNEL POLARITY AND CONTROL TYPE: N-CHANNEL JUNCTION TYPE
CURRENT RATING PER CHARACTERISTIC: 60.00 MILLIAMPERES NOMINAL ZERO-GATE-VOLTAGE DRAIN CURRENT
INCLOSURE MATERIAL: PLASTIC
INTERNAL CONFIGURATION: FIELD EFFECT
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: TO-92
MOUNTING METHOD: TERMINAL
OVERALL HEIGHT: 0.125 INCHES MINIMUM AND 0.165 INCHES MAXIMUM
OVERALL LENGTH: 0.170 INCHES MINIMUM AND 0.210 INCHES MAXIMUM
OVERALL WIDTH: 0.175 INCHES MINIMUM AND 0.205 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 360.0 MILLIWATTS MAXIMUM TOTAL DEVICE DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL LENGTH: 0.500 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 40.0 NOMINAL BREAKDOWN VOLTAGE, GATE-TO-SOURCE, WITH ALL OTHER TERMINALS SHORT-CIRCUITED TO SOURCE AND 3.0 MAXIMUM GATE TO SOURCE CUTOFF VOLTAGE
Related Searches:
1B44167B01
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961011111234
NSN
5961-01-111-1234
1B44167B01
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961011111234
NSN
5961-01-111-1234
MFG
MOTOROLA INC MOTOROLA AUTOMOTIVE ELECTRONICS
Description
SEMICONDUCTOR DEVICE,DIODE
Related Searches:
AT23185
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961011111234
NSN
5961-01-111-1234
MFG
DEERE & CO
Description
SEMICONDUCTOR DEVICE,DIODE
Related Searches:
1910-0047
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961011111388
NSN
5961-01-111-1388
MFG
AVAGO TECHNOLOGIES U.S. INC. DIV AVAGO TECHNOLOGIES
Description
CRITICALITY CODE JUSTIFICATION: FEAT
FEATURES PROVIDED: HERMETICALLY SEALED CASE
III END ITEM IDENTIFICATION: TICONDEROGA CLASS CG (47), SPRUANCE CLASS DD (963), KIDD CLASS DDG, FORRESTAL CLASS CV, LOS ANGELES CLASS SSN (688), STURGEON CLASS SSN (637), ARLEIGH BURKE CLASS DDG, VIRGINIA CLASS CGN (41), NIMITZ CLASS CVN.
INCLOSURE MATERIAL: GLASS
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: DO-7
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.107 INCHES NOMINAL
OVERALL LENGTH: 0.300 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: GERMANIUM
SPECIAL FEATURES: WEAPON SYSTEM ESSENTIAL; JUNCTION PATTERN ARRANGEMENT: PIN
TERMINAL LENGTH: 1.000 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 35.0 MAXIMUM REVERSE VOLTAGE, PEAK
Related Searches:
G1306
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961011111388
NSN
5961-01-111-1388
MFG
ITT SEMICONDUCTORS A DIVISION OF INTERNATIONAL TELEPHONE AND TELEGRAPH CORP
Description
CRITICALITY CODE JUSTIFICATION: FEAT
FEATURES PROVIDED: HERMETICALLY SEALED CASE
III END ITEM IDENTIFICATION: TICONDEROGA CLASS CG (47), SPRUANCE CLASS DD (963), KIDD CLASS DDG, FORRESTAL CLASS CV, LOS ANGELES CLASS SSN (688), STURGEON CLASS SSN (637), ARLEIGH BURKE CLASS DDG, VIRGINIA CLASS CGN (41), NIMITZ CLASS CVN.
INCLOSURE MATERIAL: GLASS
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: DO-7
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.107 INCHES NOMINAL
OVERALL LENGTH: 0.300 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: GERMANIUM
SPECIAL FEATURES: WEAPON SYSTEM ESSENTIAL; JUNCTION PATTERN ARRANGEMENT: PIN
TERMINAL LENGTH: 1.000 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 35.0 MAXIMUM REVERSE VOLTAGE, PEAK
