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5961-01-112-0056
20 Products
4-28610P
SEMICONDUCTOR DEVICE SET
NSN, MFG P/N
5961011120056
NSN
5961-01-112-0056
MFG
SELEX COMMUNICATIONS SPA
Description
COMPONENT FUNCTION RELATIONSHIP: MATCHED
SPECIAL FEATURES: TWO VARIABLE CAPACITANCE TUNING DIODE COMPONENTS; ITT SEMICONDUCTORS CONTROLLING AGENCY; COMPONENT PART NO. BB121A
Related Searches:
BB121A
SEMICONDUCTOR DEVICE SET
NSN, MFG P/N
5961011120056
NSN
5961-01-112-0056
MFG
ITT SEMICONDUCTORS A DIVISION OF INTERNATIONAL TELEPHONE AND TELEGRAPH CORP
Description
COMPONENT FUNCTION RELATIONSHIP: MATCHED
SPECIAL FEATURES: TWO VARIABLE CAPACITANCE TUNING DIODE COMPONENTS; ITT SEMICONDUCTORS CONTROLLING AGENCY; COMPONENT PART NO. BB121A
Related Searches:
310-28
TRANSISTOR
NSN, MFG P/N
5961011120181
NSN
5961-01-112-0181
MFG
LAMINAIRE CORP
Description
TRANSISTOR
Related Searches:
59-128
TRANSISTOR
NSN, MFG P/N
5961011120181
NSN
5961-01-112-0181
MFG
NATIONAL INSTRUMENT LLC DBA FILAMATIC
Description
TRANSISTOR
Related Searches:
1854-0567
TRANSISTOR
NSN, MFG P/N
5961011120407
NSN
5961-01-112-0407
MFG
AGILENT TECHNOLOGIES INC. DBA NORTH AMERICAN CONTACT CENTER DIV AGILENT BUSINESS CENTER
Description
CURRENT RATING PER CHARACTERISTIC: 200.00 MILLIAMPERES MAXIMUM COLLECTOR CURRENT, DC
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: JUNCTION CONTACT
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: TO-39
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.350 INCHES MINIMUM AND 0.370 INCHES MAXIMUM
OVERALL LENGTH: 0.240 INCHES MINIMUM AND 0.260 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 1.0 WATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: MINIMUM VOLTAGE; JUNCTION PATTERN ARRANGEMENT: NPN
TERMINAL CIRCLE DIAMETER: 0.200 INCHES NOMINAL
TERMINAL LENGTH: 0.500 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 3 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 20.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-EMITTER, BASE OPEN
Related Searches:
SRF269
TRANSISTOR
NSN, MFG P/N
5961011120407
NSN
5961-01-112-0407
MFG
FREESCALE SEMICONDUCTOR INC.
Description
CURRENT RATING PER CHARACTERISTIC: 200.00 MILLIAMPERES MAXIMUM COLLECTOR CURRENT, DC
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: JUNCTION CONTACT
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: TO-39
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.350 INCHES MINIMUM AND 0.370 INCHES MAXIMUM
OVERALL LENGTH: 0.240 INCHES MINIMUM AND 0.260 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 1.0 WATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: MINIMUM VOLTAGE; JUNCTION PATTERN ARRANGEMENT: NPN
TERMINAL CIRCLE DIAMETER: 0.200 INCHES NOMINAL
TERMINAL LENGTH: 0.500 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 3 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 20.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-EMITTER, BASE OPEN
Related Searches:
C35MR244
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961011120408
NSN
5961-01-112-0408
MFG
GENERAL ELECTRIC CO SEMI-CONDUCTOR PRODUCTS DEPT POWER COMPONENTS OPN
Description
CRITICALITY CODE JUSTIFICATION: ZZZY
DESIGN CONTROL REFERENCE: C35MR244
MANUFACTURERS CODE: 09214
REFERENCE NUMBER DIFFERENTIATING CHARACTERISTICS: MATERIAL WILL BE IN ACCORDANCE WITH NAVICP MECH; ACTIVITY HX QUALITY CONTROL, MANUFACTURING AND TESTING SPECIFICATIONS.
THE MANUFACTURERS DATA:
Related Searches:
10183
TRANSISTOR
NSN, MFG P/N
5961011120758
NSN
5961-01-112-0758
MFG
XEROX CORP
Description
TRANSISTOR
Related Searches:
1SPS331843
TRANSISTOR
NSN, MFG P/N
5961011120760
NSN
5961-01-112-0760
MFG
BAE SYSTEMS INFORMATION AND ELECTRONIC SYSTEMS INTEGRATION INC.
Description
TRANSISTOR
Related Searches:
1DTD331846
TRANSISTOR
NSN, MFG P/N
5961011120762
NSN
5961-01-112-0762
MFG
BAE SYSTEMS INFORMATION AND ELECTRONIC SYSTEMS INTEGRATION INC.
Description
TRANSISTOR
Related Searches:
5532465
TRANSISTOR
NSN, MFG P/N
5961011120762
NSN
5961-01-112-0762
MFG
TRW INC TRW ELECTRONICS AND DEFENSE SECTOR CUSTOMER SERVICE DIV
Description
TRANSISTOR
Related Searches:
238Z019U01
TRANSISTOR
NSN, MFG P/N
5961011120763
NSN
5961-01-112-0763
MFG
DELTA DATA SYSTEMS CORP
Description
TRANSISTOR
Related Searches:
5218-233
TRANSISTOR
NSN, MFG P/N
5961011120763
NSN
5961-01-112-0763
MFG
RAYTHEON COMPANY DBA RAYTHEON
Description
TRANSISTOR
Related Searches:
238Z027U01
TRANSISTOR
NSN, MFG P/N
5961011120764
NSN
5961-01-112-0764
MFG
DELTA DATA SYSTEMS CORP
Description
CURRENT RATING PER CHARACTERISTIC: 1.00 AMPERES MAXIMUM COLLECTOR CURRENT, DC
INCLOSURE MATERIAL: PLASTIC
INTERNAL CONFIGURATION: JUNCTION CONTACT
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 150.0 DEG CELSIUS JUNCTION
MOUNTING FACILITY QUANTITY: 1
MOUNTING METHOD: UNTHREADED HOLE
OVERALL HEIGHT: 0.190 INCHES MAXIMUM
OVERALL LENGTH: 0.865 INCHES MAXIMUM
OVERALL WIDTH: 0.400 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 625.0 WATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: NPN
TERMINAL TYPE AND QUANTITY: 3 PIN
TRANSFER RATIO: 150.0 MAXIMUM STATIC FORWARD CURRENT TRANSFER RATIO, COMMON-EMITTER
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 45.0 MAXIMUM COLLECTOR TO BASE VOLTAGE/STATIC/EMITTER OPEN AND 5.0 MAXIMUM EMITTER TO BASE VOLTAGE, STATIC, COLLECTOR OPEN
Related Searches:
5218-235
TRANSISTOR
NSN, MFG P/N
5961011120764
NSN
5961-01-112-0764
MFG
RAYTHEON COMPANY DBA RAYTHEON
Description
CURRENT RATING PER CHARACTERISTIC: 1.00 AMPERES MAXIMUM COLLECTOR CURRENT, DC
INCLOSURE MATERIAL: PLASTIC
INTERNAL CONFIGURATION: JUNCTION CONTACT
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 150.0 DEG CELSIUS JUNCTION
MOUNTING FACILITY QUANTITY: 1
MOUNTING METHOD: UNTHREADED HOLE
OVERALL HEIGHT: 0.190 INCHES MAXIMUM
OVERALL LENGTH: 0.865 INCHES MAXIMUM
OVERALL WIDTH: 0.400 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 625.0 WATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: NPN
TERMINAL TYPE AND QUANTITY: 3 PIN
TRANSFER RATIO: 150.0 MAXIMUM STATIC FORWARD CURRENT TRANSFER RATIO, COMMON-EMITTER
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 45.0 MAXIMUM COLLECTOR TO BASE VOLTAGE/STATIC/EMITTER OPEN AND 5.0 MAXIMUM EMITTER TO BASE VOLTAGE, STATIC, COLLECTOR OPEN
Related Searches:
238Z036U01
TRANSISTOR
NSN, MFG P/N
5961011120766
NSN
5961-01-112-0766
MFG
DELTA DATA SYSTEMS CORP
Description
CURRENT RATING PER CHARACTERISTIC: 10.00 MICROAMPERES MAXIMUM COLLECTOR CUTOFF CURRENT, DC, WITH BASE SHORT-CIRCUITED TO EMITTER
ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE: COLLECTOR
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: JUNCTION CONTACT
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: TO-39
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.350 INCHES MINIMUM AND 0.370 INCHES MAXIMUM
OVERALL LENGTH: 0.240 INCHES MINIMUM AND 0.260 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 2.5 WATTS MAXIMUM COLLECTOR POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: NPN
TERMINAL CIRCLE DIAMETER: 0.190 INCHES MINIMUM AND 0.210 INCHES MAXIMUM
TERMINAL LENGTH: 0.500 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 3 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 100.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-BASE, EMITTER OPEN AND 3.5
Related Searches:
5214-360
TRANSISTOR
NSN, MFG P/N
5961011120766
NSN
5961-01-112-0766
MFG
RAYTHEON COMPANY DBA RAYTHEON
Description
CURRENT RATING PER CHARACTERISTIC: 10.00 MICROAMPERES MAXIMUM COLLECTOR CUTOFF CURRENT, DC, WITH BASE SHORT-CIRCUITED TO EMITTER
ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE: COLLECTOR
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: JUNCTION CONTACT
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: TO-39
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.350 INCHES MINIMUM AND 0.370 INCHES MAXIMUM
OVERALL LENGTH: 0.240 INCHES MINIMUM AND 0.260 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 2.5 WATTS MAXIMUM COLLECTOR POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: NPN
TERMINAL CIRCLE DIAMETER: 0.190 INCHES MINIMUM AND 0.210 INCHES MAXIMUM
TERMINAL LENGTH: 0.500 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 3 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 100.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-BASE, EMITTER OPEN AND 3.5
Related Searches:
MRF531
TRANSISTOR
NSN, MFG P/N
5961011120766
NSN
5961-01-112-0766
MFG
FREESCALE SEMICONDUCTOR INC.
Description
CURRENT RATING PER CHARACTERISTIC: 10.00 MICROAMPERES MAXIMUM COLLECTOR CUTOFF CURRENT, DC, WITH BASE SHORT-CIRCUITED TO EMITTER
ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE: COLLECTOR
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: JUNCTION CONTACT
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: TO-39
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.350 INCHES MINIMUM AND 0.370 INCHES MAXIMUM
OVERALL LENGTH: 0.240 INCHES MINIMUM AND 0.260 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 2.5 WATTS MAXIMUM COLLECTOR POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: NPN
TERMINAL CIRCLE DIAMETER: 0.190 INCHES MINIMUM AND 0.210 INCHES MAXIMUM
TERMINAL LENGTH: 0.500 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 3 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 100.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-BASE, EMITTER OPEN AND 3.5
Related Searches:
220Z041U01
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961011120768
NSN
5961-01-112-0768
220Z041U01
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961011120768
NSN
5961-01-112-0768
MFG
DELTA DATA SYSTEMS CORP
Description
SEMICONDUCTOR DEVICE,DIODE
Related Searches:
RMP5100
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961011120768
NSN
5961-01-112-0768
MFG
FAIRCHILD SEMICONDUCTOR CORP SEMICONDUCTOR DIV HQ
Description
SEMICONDUCTOR DEVICE,DIODE
