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5961-01-128-0181

20 Products

2N697

TRANSISTOR

NSN, MFG P/N

5961011280181

NSN

5961-01-128-0181

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2N697

TRANSISTOR

NSN, MFG P/N

5961011280181

NSN

5961-01-128-0181

MFG

TEXAS INSTRUMENTS INCORPORATED DBA TEXAS INSTRUMENTS DIV SEMICONDUCTOR GROUP

151-0632-00

TRANSISTOR

NSN, MFG P/N

5961011278398

NSN

5961-01-127-8398

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151-0632-00

TRANSISTOR

NSN, MFG P/N

5961011278398

NSN

5961-01-127-8398

MFG

TEKTRONIX INC. DBA TEKTRONIX

151-0678-00

TRANSISTOR

NSN, MFG P/N

5961011278399

NSN

5961-01-127-8399

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151-0678-00

TRANSISTOR

NSN, MFG P/N

5961011278399

NSN

5961-01-127-8399

MFG

TEKTRONIX INC. DBA TEKTRONIX

151-0391-00

TRANSISTOR

NSN, MFG P/N

5961011278400

NSN

5961-01-127-8400

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151-0391-00

TRANSISTOR

NSN, MFG P/N

5961011278400

NSN

5961-01-127-8400

MFG

TEKTRONIX INC. DBA TEKTRONIX

SPS6867K

TRANSISTOR

NSN, MFG P/N

5961011278400

NSN

5961-01-127-8400

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SPS6867K

TRANSISTOR

NSN, MFG P/N

5961011278400

NSN

5961-01-127-8400

MFG

FREESCALE SEMICONDUCTOR INC.

152-0721-00

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961011278401

NSN

5961-01-127-8401

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152-0721-00

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961011278401

NSN

5961-01-127-8401

MFG

TEKTRONIX INC. DBA TEKTRONIX

152-0655-00

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961011278402

NSN

5961-01-127-8402

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152-0655-00

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961011278402

NSN

5961-01-127-8402

MFG

TEKTRONIX INC. DBA TEKTRONIX

29015-1

TRANSISTOR

NSN, MFG P/N

5961011278699

NSN

5961-01-127-8699

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29015-1

TRANSISTOR

NSN, MFG P/N

5961011278699

NSN

5961-01-127-8699

MFG

ELDEC CORPORATION DBA CRANE AEROSPACE & ELECTRONIC

Description

CURRENT RATING PER CHARACTERISTIC: 3.00 AMPERES MAXIMUM COLLECTOR CURRENT, DC
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
MANUFACTURERS CODE: 08748
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 200.0 DEG CELSIUS JUNCTION
MFR SOURCE CONTROLLING REFERENCE: 29015-1
MOUNTING FACILITY QUANTITY: 2
MOUNTING METHOD: UNTHREADED HOLE
OVERALL DIAMETER: 0.620 INCHES MAXIMUM
OVERALL LENGTH: 0.297 INCHES NOMINAL
POWER RATING PER CHARACTERISTIC: 75.0 WATTS MAXIMUM TOTAL DEVICE DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPEC/STD CONTROLLING DATA:
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: NPN
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD AND 1 CASE

NSE 6038

TRANSISTOR

NSN, MFG P/N

5961011278699

NSN

5961-01-127-8699

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NSE 6038

TRANSISTOR

NSN, MFG P/N

5961011278699

NSN

5961-01-127-8699

MFG

MICROSEMI CORP. - MASSACHUSETTS DBA MICROSEMI-LAWRENCE DIV MICROSEMI CORPORATION

Description

CURRENT RATING PER CHARACTERISTIC: 3.00 AMPERES MAXIMUM COLLECTOR CURRENT, DC
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
MANUFACTURERS CODE: 08748
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 200.0 DEG CELSIUS JUNCTION
MFR SOURCE CONTROLLING REFERENCE: 29015-1
MOUNTING FACILITY QUANTITY: 2
MOUNTING METHOD: UNTHREADED HOLE
OVERALL DIAMETER: 0.620 INCHES MAXIMUM
OVERALL LENGTH: 0.297 INCHES NOMINAL
POWER RATING PER CHARACTERISTIC: 75.0 WATTS MAXIMUM TOTAL DEVICE DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPEC/STD CONTROLLING DATA:
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: NPN
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD AND 1 CASE

2802638-1

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961011278700

NSN

5961-01-127-8700

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2802638-1

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961011278700

NSN

5961-01-127-8700

MFG

SELEX GALILEO LTD

Description

DESIGN CONTROL REFERENCE: 2802638-1
MANUFACTURERS CODE: K0662
POWER RATING PER CHARACTERISTIC: 400.0 MILLIWATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
THE MANUFACTURERS DATA:

JANTX1N6051A

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961011278701

NSN

5961-01-127-8701

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JANTX1N6051A

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961011278701

NSN

5961-01-127-8701

MFG

MILITARY SPECIFICATIONS PROMULGATED BY MILITARY DEPARTMENTS/AGENCIES UNDER AUTHORITY OF DEFENSE STANDARDIZATION MANUAL 4120 3-M

Description

CURRENT RATING PER CHARACTERISTIC: 1.00 MILLIAMPERES MAXIMUM VOLTAGE REGULATOR DIODE CURRENT
DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: JANTX1N6051A
ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE: CATHODE
FEATURES PROVIDED: HERMETICALLY SEALED CASE
FUNCTION FOR WHICH DESIGNED: TRANSIENT SUPPRESSOR
III END ITEM IDENTIFICATION: F16AIRCOMBFIT 81755
INCLOSURE MATERIAL: GLASS AND METAL
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: DO-13
MANUFACTURERS CODE: 81349
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 175.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
NON-DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: MIL-PRF-19500/507
OVERALL DIAMETER: 0.215 INCHES MINIMUM AND 0.235 INCHES MAXIMUM
OVERALL LENGTH: 0.293 INCHES MINIMUM AND 0.357 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 1.0 WATTS MAXIMUM REVERSE POWER DISSIPATION, DC
SEMICONDUCTOR MATERIAL: SILICON
SPEC/STD CONTROLLING DATA:
SPECIFICATION/STANDARD DATA: 81349-MIL-S-195

D014068-1

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961011278702

NSN

5961-01-127-8702

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D014068-1

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961011278702

NSN

5961-01-127-8702

MFG

BOEING COMPANY THE DBA BOEING DIV DEFENSE SPACE & SECURITY - GLOBAL MOBILITY SYSTEMS

Description

CURRENT RATING PER CHARACTERISTIC: 50.00 AMPERES MAXIMUM PEAK FORWARD SURGE CURRENT
INCLOSURE MATERIAL: GLASS
MANUFACTURERS CODE: 88277
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 175.0 DEG CELSIUS AMBIENT AIR
MFR SOURCE CONTROLLING REFERENCE: D014068-1
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.200 INCHES MAXIMUM
OVERALL LENGTH: 1.000 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 20.0 WATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPEC/STD CONTROLLING DATA:
SPECIAL FEATURES: SYMBOL AND POLARITY IDENTIFICATION MARKED ON TERMINALS; JUNCTION PATTERN ARRANGEMENT: NP
TERMINAL LENGTH: 12.000 INCHES MINIMUM AND 13.000 INCHES MAXIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD

R-270

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961011278702

NSN

5961-01-127-8702

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R-270

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961011278702

NSN

5961-01-127-8702

MFG

RUSSTECH ENGINEERING CO INC

Description

CURRENT RATING PER CHARACTERISTIC: 50.00 AMPERES MAXIMUM PEAK FORWARD SURGE CURRENT
INCLOSURE MATERIAL: GLASS
MANUFACTURERS CODE: 88277
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 175.0 DEG CELSIUS AMBIENT AIR
MFR SOURCE CONTROLLING REFERENCE: D014068-1
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.200 INCHES MAXIMUM
OVERALL LENGTH: 1.000 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 20.0 WATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPEC/STD CONTROLLING DATA:
SPECIAL FEATURES: SYMBOL AND POLARITY IDENTIFICATION MARKED ON TERMINALS; JUNCTION PATTERN ARRANGEMENT: NP
TERMINAL LENGTH: 12.000 INCHES MINIMUM AND 13.000 INCHES MAXIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD

WB0270

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961011278702

NSN

5961-01-127-8702

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WB0270

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961011278702

NSN

5961-01-127-8702

MFG

WALLACE BLACK CO

Description

CURRENT RATING PER CHARACTERISTIC: 50.00 AMPERES MAXIMUM PEAK FORWARD SURGE CURRENT
INCLOSURE MATERIAL: GLASS
MANUFACTURERS CODE: 88277
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 175.0 DEG CELSIUS AMBIENT AIR
MFR SOURCE CONTROLLING REFERENCE: D014068-1
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.200 INCHES MAXIMUM
OVERALL LENGTH: 1.000 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 20.0 WATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPEC/STD CONTROLLING DATA:
SPECIAL FEATURES: SYMBOL AND POLARITY IDENTIFICATION MARKED ON TERMINALS; JUNCTION PATTERN ARRANGEMENT: NP
TERMINAL LENGTH: 12.000 INCHES MINIMUM AND 13.000 INCHES MAXIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD

MA4C604

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961011279274

NSN

5961-01-127-9274

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MA4C604

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961011279274

NSN

5961-01-127-9274

MFG

M/A-COM INC. DBA TYCO ELECTRONIC WIRELESS SYSTEM

00606296014778

SEMICONDUCTOR DEVICES,UNITIZED

NSN, MFG P/N

5961011279312

NSN

5961-01-127-9312

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00606296014778

SEMICONDUCTOR DEVICES,UNITIZED

NSN, MFG P/N

5961011279312

NSN

5961-01-127-9312

MFG

THE TECHNICAL MATERIAL CORPORATION DBA T M C

22961

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961011279489

NSN

5961-01-127-9489

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22961

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961011279489

NSN

5961-01-127-9489

MFG

SMITHS AEROSPACE INC. ELECTRONIC SYSTEMS-GRAND RAPIDS

Description

INCLOSURE MATERIAL: GLASS
MANUFACTURERS CODE: 30377
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 200.0 DEG CELSIUS AMBIENT AIR
MFR SOURCE CONTROLLING REFERENCE: 22961
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.090 INCHES MAXIMUM
OVERALL LENGTH: 0.200 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
SPEC/STD CONTROLLING DATA:
TERMINAL CIRCLE DIAMETER: 0.020 INCHES MAXIMUM
TERMINAL LENGTH: 0.300 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 15.3 MAXIMUM NOMINAL REGULATOR VOLTAGE

5M15-3ZZ

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961011279489

NSN

5961-01-127-9489

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5M15-3ZZ

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961011279489

NSN

5961-01-127-9489

MFG

FREESCALE SEMICONDUCTOR INC.

Description

INCLOSURE MATERIAL: GLASS
MANUFACTURERS CODE: 30377
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 200.0 DEG CELSIUS AMBIENT AIR
MFR SOURCE CONTROLLING REFERENCE: 22961
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.090 INCHES MAXIMUM
OVERALL LENGTH: 0.200 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
SPEC/STD CONTROLLING DATA:
TERMINAL CIRCLE DIAMETER: 0.020 INCHES MAXIMUM
TERMINAL LENGTH: 0.300 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 15.3 MAXIMUM NOMINAL REGULATOR VOLTAGE

353-9011-022

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961011279490

NSN

5961-01-127-9490

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353-9011-022

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961011279490

NSN

5961-01-127-9490

MFG

ROCKWELL COLLINS INC. DBA GOVERNMENT SYSTEMS DIV GOVERNMENT SYSTEMS

Description

MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.370 INCHES MAXIMUM
OVERALL LENGTH: 0.260 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 3 PIN
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 100.0 MAXIMUM REVERSE VOLTAGE, PEAK

JANTX1N3310B

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961011279491

NSN

5961-01-127-9491

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JANTX1N3310B

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961011279491

NSN

5961-01-127-9491

MFG

MILITARY SPECIFICATIONS PROMULGATED BY MILITARY DEPARTMENTS/AGENCIES UNDER AUTHORITY OF DEFENSE STANDARDIZATION MANUAL 4120 3-M

Description

CURRENT RATING PER CHARACTERISTIC: 4330.00 MILLIAMPERES MAXIMUM VOLTAGE REGULATOR DIODE CURRENT
DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: JANTX1N3310B
FEATURES PROVIDED: HERMETICALLY SEALED CASE
FUNCTION FOR WHICH DESIGNED: VOLTAGE REGULATOR
INCLOSURE MATERIAL: GLASS
MANUFACTURERS CODE: 81349
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 150.0 DEG CELSIUS AMBIENT AIR
MOUNTING FACILITY QUANTITY: 1
MOUNTING METHOD: TERMINAL AND THREADED STUD
NOMINAL THREAD SIZE: 0.250 INCHES
NON-DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: MIL-S-19500/35B
OVERALL DIAMETER: 0.667 INCHES MINIMUM
OVERALL LENGTH: 0.450 INCHES MAXIMUM
OVERALL WIDTH ACROSS FLATS: 0.667 INCHES MINIMUM AND 0.687 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 50.0 WATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPEC/STD CONTROLLING DATA:
SPECIFICATION/STANDARD DATA: 81349-MIL-S-19500/358 GOVERNMENT SPECIFICATION
TERMINAL TYPE AND QUANTITY: 1 TAB, SOLDER LUG AND 1 THREADED STUD_!!