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5961-01-147-8988
20 Products
105022-01
SEMICONDUCTOR DEVICES,UNITIZED
NSN, MFG P/N
5961011478988
NSN
5961-01-147-8988
105022-01
SEMICONDUCTOR DEVICES,UNITIZED
NSN, MFG P/N
5961011478988
NSN
5961-01-147-8988
MFG
ROLM CORP MIL SPEC COMPUTERS
Description
COMPONENT NAME AND QUANTITY: 2 TRANSISTOR
CURRENT RATING PER CHARACTERISTIC: 1.50 AMPERES MAXIMUM VOLTAGE REGULATOR DIODE CURRENT ALL TRANSISTOR
INCLOSURE MATERIAL: CERAMIC
OVERALL HEIGHT: 0.200 INCHES NOMINAL
OVERALL LENGTH: 0.660 INCHES MINIMUM AND 0.785 INCHES MAXIMUM
OVERALL WIDTH: 0.220 INCHES MINIMUM AND 0.280 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON ALL TRANSISTOR
SPECIAL FEATURES: ALL TRANSISTOR JUNCTION PATTERN ARRANGEMENT: NPN
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 40.0 MAXIMUM COLLECTOR TO EMITTER VOLTAGE, DC AND 60.0 MAXIMUM COLLECTOR TO BASE VOLTAGE, DC AND 6.0 MAXIMUM EMITTER TO BASE VOLTAGE, DC ALL TRANSISTOR
Related Searches:
MHQ4013
SEMICONDUCTOR DEVICES,UNITIZED
NSN, MFG P/N
5961011478988
NSN
5961-01-147-8988
MHQ4013
SEMICONDUCTOR DEVICES,UNITIZED
NSN, MFG P/N
5961011478988
NSN
5961-01-147-8988
MFG
FREESCALE SEMICONDUCTOR INC.
Description
COMPONENT NAME AND QUANTITY: 2 TRANSISTOR
CURRENT RATING PER CHARACTERISTIC: 1.50 AMPERES MAXIMUM VOLTAGE REGULATOR DIODE CURRENT ALL TRANSISTOR
INCLOSURE MATERIAL: CERAMIC
OVERALL HEIGHT: 0.200 INCHES NOMINAL
OVERALL LENGTH: 0.660 INCHES MINIMUM AND 0.785 INCHES MAXIMUM
OVERALL WIDTH: 0.220 INCHES MINIMUM AND 0.280 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON ALL TRANSISTOR
SPECIAL FEATURES: ALL TRANSISTOR JUNCTION PATTERN ARRANGEMENT: NPN
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 40.0 MAXIMUM COLLECTOR TO EMITTER VOLTAGE, DC AND 60.0 MAXIMUM COLLECTOR TO BASE VOLTAGE, DC AND 6.0 MAXIMUM EMITTER TO BASE VOLTAGE, DC ALL TRANSISTOR
Related Searches:
655-628
RECTIFIER,SEMICONDUCTOR DEVICE,UNITIZED
NSN, MFG P/N
5961011478989
NSN
5961-01-147-8989
655-628
RECTIFIER,SEMICONDUCTOR DEVICE,UNITIZED
NSN, MFG P/N
5961011478989
NSN
5961-01-147-8989
MFG
MICRO USPD INC
Description
ABSOLUTE MAXIMUM CURRENT RATING PER CHARACTERISTIC: 14.50 AMPERES AVERAGE FORWARD CURRENT AVERAGED OVER A FULL 60-HZ CYCLE
ABSOLUTE MAXIMUM VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 600.0 WORKING PEAK REVERSE VOLTAGE, MAXIMUM PEAK TOTAL VALUE
CIRCUIT CONNECTION STYLE DESIGNATOR: A8 BRIDGE 3 PHASE
MATERIAL: SILICON
MOUNTING METHOD: UNTHREADED HOLE
OPERATING TEMP RANGE: -55.0 TO 150.0 DEG CELSIUS
OVERALL HEIGHT: 0.820 INCHES NOMINAL
OVERALL LENGTH: 2.280 INCHES NOMINAL
OVERALL WIDTH: 0.770 INCHES NOMINAL
TERMINAL TYPE AND QUANTITY: 5 TURRET
Related Searches:
85946200-02
RECTIFIER,SEMICONDUCTOR DEVICE,UNITIZED
NSN, MFG P/N
5961011478989
NSN
5961-01-147-8989
85946200-02
RECTIFIER,SEMICONDUCTOR DEVICE,UNITIZED
NSN, MFG P/N
5961011478989
NSN
5961-01-147-8989
MFG
GENERAL DYNAMICS INFORMATION SYSTEMS INC. DBA GENERAL DYNAMICS ADVANCED INFORMATION SYSTEMS
Description
ABSOLUTE MAXIMUM CURRENT RATING PER CHARACTERISTIC: 14.50 AMPERES AVERAGE FORWARD CURRENT AVERAGED OVER A FULL 60-HZ CYCLE
ABSOLUTE MAXIMUM VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 600.0 WORKING PEAK REVERSE VOLTAGE, MAXIMUM PEAK TOTAL VALUE
CIRCUIT CONNECTION STYLE DESIGNATOR: A8 BRIDGE 3 PHASE
MATERIAL: SILICON
MOUNTING METHOD: UNTHREADED HOLE
OPERATING TEMP RANGE: -55.0 TO 150.0 DEG CELSIUS
OVERALL HEIGHT: 0.820 INCHES NOMINAL
OVERALL LENGTH: 2.280 INCHES NOMINAL
OVERALL WIDTH: 0.770 INCHES NOMINAL
TERMINAL TYPE AND QUANTITY: 5 TURRET
Related Searches:
RPM508CDC
RECTIFIER,SEMICONDUCTOR DEVICE,UNITIZED
NSN, MFG P/N
5961011478989
NSN
5961-01-147-8989
RPM508CDC
RECTIFIER,SEMICONDUCTOR DEVICE,UNITIZED
NSN, MFG P/N
5961011478989
NSN
5961-01-147-8989
MFG
MICROSEMI CORP RPM MICRO DIV
Description
ABSOLUTE MAXIMUM CURRENT RATING PER CHARACTERISTIC: 14.50 AMPERES AVERAGE FORWARD CURRENT AVERAGED OVER A FULL 60-HZ CYCLE
ABSOLUTE MAXIMUM VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 600.0 WORKING PEAK REVERSE VOLTAGE, MAXIMUM PEAK TOTAL VALUE
CIRCUIT CONNECTION STYLE DESIGNATOR: A8 BRIDGE 3 PHASE
MATERIAL: SILICON
MOUNTING METHOD: UNTHREADED HOLE
OPERATING TEMP RANGE: -55.0 TO 150.0 DEG CELSIUS
OVERALL HEIGHT: 0.820 INCHES NOMINAL
OVERALL LENGTH: 2.280 INCHES NOMINAL
OVERALL WIDTH: 0.770 INCHES NOMINAL
TERMINAL TYPE AND QUANTITY: 5 TURRET
Related Searches:
SA7558
RECTIFIER,SEMICONDUCTOR DEVICE,UNITIZED
NSN, MFG P/N
5961011478989
NSN
5961-01-147-8989
SA7558
RECTIFIER,SEMICONDUCTOR DEVICE,UNITIZED
NSN, MFG P/N
5961011478989
NSN
5961-01-147-8989
MFG
SEMTECH CORPORATION
Description
ABSOLUTE MAXIMUM CURRENT RATING PER CHARACTERISTIC: 14.50 AMPERES AVERAGE FORWARD CURRENT AVERAGED OVER A FULL 60-HZ CYCLE
ABSOLUTE MAXIMUM VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 600.0 WORKING PEAK REVERSE VOLTAGE, MAXIMUM PEAK TOTAL VALUE
CIRCUIT CONNECTION STYLE DESIGNATOR: A8 BRIDGE 3 PHASE
MATERIAL: SILICON
MOUNTING METHOD: UNTHREADED HOLE
OPERATING TEMP RANGE: -55.0 TO 150.0 DEG CELSIUS
OVERALL HEIGHT: 0.820 INCHES NOMINAL
OVERALL LENGTH: 2.280 INCHES NOMINAL
OVERALL WIDTH: 0.770 INCHES NOMINAL
TERMINAL TYPE AND QUANTITY: 5 TURRET
Related Searches:
655-620-2
RECTIFIER,SEMICONDUCTOR DEVICE
NSN, MFG P/N
5961011479012
NSN
5961-01-147-9012
655-620-2
RECTIFIER,SEMICONDUCTOR DEVICE
NSN, MFG P/N
5961011479012
NSN
5961-01-147-9012
MFG
MICRO USPD INC
Description
ABSOLUTE MAXIMUM CURRENT RATING PER CHARACTERISTIC: 10.00 AMPERES AVERAGE FORWARD CURRENT AVERAGED OVER A FULL 60-HZ CYCLE
ABSOLUTE MAXIMUM VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 300.0 REVERSE VOLTAGE, DC
CIRCUIT CONNECTION STYLE DESIGNATOR: 2 CENTER TAP 1 PHASE
III END ITEM IDENTIFICATION: COMPUTER 97384
MATERIAL: SILICON
MOUNTING METHOD: UNTHREADED HOLE
OVERALL HEIGHT: 0.870 INCHES MAXIMUM
OVERALL LENGTH: 2.270 INCHES MAXIMUM
OVERALL WIDTH: 0.374 INCHES MAXIMUM
TERMINAL TYPE AND QUANTITY: 3 TURRET
Related Searches:
85946400-02
RECTIFIER,SEMICONDUCTOR DEVICE
NSN, MFG P/N
5961011479012
NSN
5961-01-147-9012
85946400-02
RECTIFIER,SEMICONDUCTOR DEVICE
NSN, MFG P/N
5961011479012
NSN
5961-01-147-9012
MFG
GENERAL DYNAMICS INFORMATION SYSTEMS INC. DBA GENERAL DYNAMICS ADVANCED INFORMATION SYSTEMS
Description
ABSOLUTE MAXIMUM CURRENT RATING PER CHARACTERISTIC: 10.00 AMPERES AVERAGE FORWARD CURRENT AVERAGED OVER A FULL 60-HZ CYCLE
ABSOLUTE MAXIMUM VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 300.0 REVERSE VOLTAGE, DC
CIRCUIT CONNECTION STYLE DESIGNATOR: 2 CENTER TAP 1 PHASE
III END ITEM IDENTIFICATION: COMPUTER 97384
MATERIAL: SILICON
MOUNTING METHOD: UNTHREADED HOLE
OVERALL HEIGHT: 0.870 INCHES MAXIMUM
OVERALL LENGTH: 2.270 INCHES MAXIMUM
OVERALL WIDTH: 0.374 INCHES MAXIMUM
TERMINAL TYPE AND QUANTITY: 3 TURRET
Related Searches:
SA9114
RECTIFIER,SEMICONDUCTOR DEVICE
NSN, MFG P/N
5961011479012
NSN
5961-01-147-9012
SA9114
RECTIFIER,SEMICONDUCTOR DEVICE
NSN, MFG P/N
5961011479012
NSN
5961-01-147-9012
MFG
SEMTECH CORPORATION
Description
ABSOLUTE MAXIMUM CURRENT RATING PER CHARACTERISTIC: 10.00 AMPERES AVERAGE FORWARD CURRENT AVERAGED OVER A FULL 60-HZ CYCLE
ABSOLUTE MAXIMUM VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 300.0 REVERSE VOLTAGE, DC
CIRCUIT CONNECTION STYLE DESIGNATOR: 2 CENTER TAP 1 PHASE
III END ITEM IDENTIFICATION: COMPUTER 97384
MATERIAL: SILICON
MOUNTING METHOD: UNTHREADED HOLE
OVERALL HEIGHT: 0.870 INCHES MAXIMUM
OVERALL LENGTH: 2.270 INCHES MAXIMUM
OVERALL WIDTH: 0.374 INCHES MAXIMUM
TERMINAL TYPE AND QUANTITY: 3 TURRET
Related Searches:
SDA-280-2
RECTIFIER,SEMICONDUCTOR DEVICE
NSN, MFG P/N
5961011479012
NSN
5961-01-147-9012
SDA-280-2
RECTIFIER,SEMICONDUCTOR DEVICE
NSN, MFG P/N
5961011479012
NSN
5961-01-147-9012
MFG
SOLID STATE DEVICES INC.
Description
ABSOLUTE MAXIMUM CURRENT RATING PER CHARACTERISTIC: 10.00 AMPERES AVERAGE FORWARD CURRENT AVERAGED OVER A FULL 60-HZ CYCLE
ABSOLUTE MAXIMUM VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 300.0 REVERSE VOLTAGE, DC
CIRCUIT CONNECTION STYLE DESIGNATOR: 2 CENTER TAP 1 PHASE
III END ITEM IDENTIFICATION: COMPUTER 97384
MATERIAL: SILICON
MOUNTING METHOD: UNTHREADED HOLE
OVERALL HEIGHT: 0.870 INCHES MAXIMUM
OVERALL LENGTH: 2.270 INCHES MAXIMUM
OVERALL WIDTH: 0.374 INCHES MAXIMUM
TERMINAL TYPE AND QUANTITY: 3 TURRET
Related Searches:
256487
SEMICONDUCTOR DEVICE SET
NSN, MFG P/N
5961011479013
NSN
5961-01-147-9013
MFG
FLUKE CORPORATION
Description
COMPONENT FUNCTION RELATIONSHIP: MATCHED
COMPONENT NAME AND QUANTITY: 11 TRANSISTOR
INCLOSURE MATERIAL: PLASTIC ALL TRANSISTOR
MOUNTING METHOD: TERMINAL ALL TRANSISTOR
OVERALL DIAMETER: 0.210 INCHES NOMINAL ALL TRANSISTOR
OVERALL LENGTH: 0.200 INCHES MAXIMUM ALL TRANSISTOR
TERMINAL TYPE AND QUANTITY: 3 UNINSULATED WIRE LEAD ALL TRANSISTOR
Related Searches:
1N4188B
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961011479840
NSN
5961-01-147-9840
MFG
SEMICON INC DIV OF THE LORVIC CORP
Description
CURRENT RATING PER CHARACTERISTIC: 2.00 MILLIAMPERES MAXIMUM VOLTAGE REGULATOR DIODE CURRENT
DESIGN CONTROL REFERENCE: 1N4188B
INCLOSURE MATERIAL: PLASTIC
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: DO29
MANUFACTURERS CODE: 55989
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 200.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.135 INCHES NOMINAL
OVERALL LENGTH: 0.315 INCHES MINIMUM AND 0.360 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 1.0 WATTS MAXIMUM TOTAL DEVICE DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPECIFICATION/STANDARD DATA: 80131-RELEASE4327 PROFESSIONAL/INDUSTRIAL ASSOCIATION STANDARD
TERMINAL CIRCLE DIAMETER: 0.029 INCHES MINIMUM AND 0.033 INCHES MAXIMUM
TERMINAL LENGTH: 1.000 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
THE MANUFACTURERS DATA:
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 120.0 MAXIMUM NOMINAL REGULATOR VOLTAGE
Related Searches:
RELEASE4327
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961011479840
NSN
5961-01-147-9840
RELEASE4327
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961011479840
NSN
5961-01-147-9840
MFG
ELECTRONIC INDUSTRIES ASSOCIATION
Description
CURRENT RATING PER CHARACTERISTIC: 2.00 MILLIAMPERES MAXIMUM VOLTAGE REGULATOR DIODE CURRENT
DESIGN CONTROL REFERENCE: 1N4188B
INCLOSURE MATERIAL: PLASTIC
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: DO29
MANUFACTURERS CODE: 55989
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 200.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.135 INCHES NOMINAL
OVERALL LENGTH: 0.315 INCHES MINIMUM AND 0.360 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 1.0 WATTS MAXIMUM TOTAL DEVICE DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPECIFICATION/STANDARD DATA: 80131-RELEASE4327 PROFESSIONAL/INDUSTRIAL ASSOCIATION STANDARD
TERMINAL CIRCLE DIAMETER: 0.029 INCHES MINIMUM AND 0.033 INCHES MAXIMUM
TERMINAL LENGTH: 1.000 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
THE MANUFACTURERS DATA:
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 120.0 MAXIMUM NOMINAL REGULATOR VOLTAGE
Related Searches:
55-1104-2
TRANSISTOR
NSN, MFG P/N
5961011480179
NSN
5961-01-148-0179
MFG
GRIMES AEROSPACE COMPANY DBA HONEYWELL
Description
CURRENT RATING PER CHARACTERISTIC: 10.00 AMPERES MAXIMUM BASE CURRENT, DC AND 20.00 AMPERES MAXIMUM COLLECTOR CURRENT, DC
ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE: COLLECTOR
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: JUNCTION CONTACT
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: TO-3
MANUFACTURERS CODE: 72914
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 175.0 DEG CELSIUS JUNCTION
MFR SOURCE CONTROLLING REFERENCE: 55-1104-2
MOUNTING FACILITY QUANTITY: 2
MOUNTING METHOD: UNTHREADED HOLE
OVERALL HEIGHT: 0.762 INCHES NOMINAL
OVERALL LENGTH: 1.553 INCHES MINIMUM AND 1.573 INCHES MAXIMUM
OVERALL WIDTH: 1.050 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 150.0 WATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPEC/STD CONTROLLING DATA:
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: NPN
TERMINAL TYPE AND QUANTITY: 2 PIN AND 1 CASE
VOLTAGE RATING
Related Searches:
XGSR15040
TRANSISTOR
NSN, MFG P/N
5961011480179
NSN
5961-01-148-0179
MFG
SEMICOA DBA SEMICOA SEMI CONDUCTORS
Description
CURRENT RATING PER CHARACTERISTIC: 10.00 AMPERES MAXIMUM BASE CURRENT, DC AND 20.00 AMPERES MAXIMUM COLLECTOR CURRENT, DC
ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE: COLLECTOR
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: JUNCTION CONTACT
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: TO-3
MANUFACTURERS CODE: 72914
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 175.0 DEG CELSIUS JUNCTION
MFR SOURCE CONTROLLING REFERENCE: 55-1104-2
MOUNTING FACILITY QUANTITY: 2
MOUNTING METHOD: UNTHREADED HOLE
OVERALL HEIGHT: 0.762 INCHES NOMINAL
OVERALL LENGTH: 1.553 INCHES MINIMUM AND 1.573 INCHES MAXIMUM
OVERALL WIDTH: 1.050 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 150.0 WATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPEC/STD CONTROLLING DATA:
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: NPN
TERMINAL TYPE AND QUANTITY: 2 PIN AND 1 CASE
VOLTAGE RATING
Related Searches:
583R847H02
TRANSISTOR
NSN, MFG P/N
5961011480385
NSN
5961-01-148-0385
MFG
NORTHROP GRUMMAN SYSTEMS CORPORATION DIV NORTHROP GRUMMAN SYSTEMS CORPORATION ELECTRONIC SYSTEMS
Description
CURRENT RATING PER CHARACTERISTIC: 50.00 MILLIAMPERES MAXIMUM DRAIN CURRENT
INCLOSURE MATERIAL: METAL
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 125.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
OVERALL LENGTH: 0.240 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 300.0 MILLIWATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 3 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 40.0 MAXIMUM GATE TO SOURCE VOLTAGE
Related Searches:
583R847H04
TRANSISTOR
NSN, MFG P/N
5961011480385
NSN
5961-01-148-0385
MFG
UNIVERSAL SEMICONDUCTOR INC
Description
CURRENT RATING PER CHARACTERISTIC: 50.00 MILLIAMPERES MAXIMUM DRAIN CURRENT
INCLOSURE MATERIAL: METAL
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 125.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
OVERALL LENGTH: 0.240 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 300.0 MILLIWATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 3 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 40.0 MAXIMUM GATE TO SOURCE VOLTAGE
Related Searches:
1N5344A
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961011480996
NSN
5961-01-148-0996
MFG
MICROSEMI CORP. - MASSACHUSETTS DBA MICROSEMI-LAWRENCE DIV MICROSEMI CORPORATION
Description
CURRENT RATING PER CHARACTERISTIC: 150.00 MILLIAMPERES NOMINAL VOLTAGE REGULATOR DIODE CURRENT
FEATURES PROVIDED: HERMETICALLY SEALED CASE
FUNCTION FOR WHICH DESIGNED: ZENER DIODE
INCLOSURE MATERIAL: GLASS
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 200.0 DEG CELSIUS JUNCTION
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.130 INCHES MINIMUM AND 0.145 INCHES MAXIMUM
OVERALL LENGTH: 0.350 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 5.0 WATTS MAXIMUM TOTAL DEVICE DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPECIFICATION/STANDARD DATA: 80131-RELEASE 5750 PROFESSIONAL/INDUSTRIAL ASSOCIATION SPECIFICATION
TERMINAL LENGTH: 1.000 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 8.2 NOMINAL NOMINAL REGULATOR VOLTAGE
VOLTAGE TOLERANCE IN PERCENT: -10.0 TO 10.0
Related Searches:
RELEASE 5750
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961011480996
NSN
5961-01-148-0996
RELEASE 5750
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961011480996
NSN
5961-01-148-0996
MFG
ELECTRONIC INDUSTRIES ASSOCIATION
Description
CURRENT RATING PER CHARACTERISTIC: 150.00 MILLIAMPERES NOMINAL VOLTAGE REGULATOR DIODE CURRENT
FEATURES PROVIDED: HERMETICALLY SEALED CASE
FUNCTION FOR WHICH DESIGNED: ZENER DIODE
INCLOSURE MATERIAL: GLASS
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 200.0 DEG CELSIUS JUNCTION
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.130 INCHES MINIMUM AND 0.145 INCHES MAXIMUM
OVERALL LENGTH: 0.350 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 5.0 WATTS MAXIMUM TOTAL DEVICE DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPECIFICATION/STANDARD DATA: 80131-RELEASE 5750 PROFESSIONAL/INDUSTRIAL ASSOCIATION SPECIFICATION
TERMINAL LENGTH: 1.000 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 8.2 NOMINAL NOMINAL REGULATOR VOLTAGE
VOLTAGE TOLERANCE IN PERCENT: -10.0 TO 10.0
Related Searches:
1127-80-044
SEMICONDUCTOR DEVICE ASSEMBLY
NSN, MFG P/N
5961011481266
NSN
5961-01-148-1266
1127-80-044
SEMICONDUCTOR DEVICE ASSEMBLY
NSN, MFG P/N
5961011481266
NSN
5961-01-148-1266
MFG
BAE SYSTEMS LAND & ARMAMENTS L.P. D IV ARMAMENT SYSTEMS
Description
MAJOR COMPONENTS: HEAT SINK 1,TRANSISTOR 3
