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5961-01-174-6638
20 Products
MS175JE
TRANSISTOR
NSN, MFG P/N
5961011746638
NSN
5961-01-174-6638
MFG
TEXAS INSTRUMENTS INCORPORATED DBA TEXAS INSTRUMENTS DIV SEMICONDUCTOR GROUP
Description
FEATURES PROVIDED: HERMETICALLY SEALED CASE
MOUNTING METHOD: TERMINAL
POWER RATING PER CHARACTERISTIC: 1.0 WATTS NOMINAL FORWARD POWER DISSIPATION, DC
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: NPN
TERMINAL TYPE AND QUANTITY: 4 RIBBON
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 30.0 NOMINAL COLLECTOR TO BASE VOLTAGE, DC
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MTM1224
TRANSISTOR
NSN, MFG P/N
5961011746639
NSN
5961-01-174-6639
MFG
FREESCALE SEMICONDUCTOR INC.
Description
(NON-CORE DATA) CHANNEL POLARITY AND CONTROL TYPE: N-CHANNEL JUNCTION TYPE
INCLOSURE MATERIAL: METAL
MOUNTING FACILITY QUANTITY: 2
MOUNTING METHOD: UNTHREADED HOLE
OVERALL HEIGHT: 0.350 INCHES NOMINAL
OVERALL LENGTH: 1.563 INCHES MAXIMUM
OVERALL WIDTH: 1.050 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL LENGTH: 0.312 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 PIN AND 1 CASE
Related Searches:
100-4-011
TRANSISTOR
NSN, MFG P/N
5961011746640
NSN
5961-01-174-6640
MFG
VIBRO-METER INC
Description
ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE: COLLECTOR
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: JUNCTION CONTACT
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: TO-46
MOUNTING FACILITY QUANTITY: 3
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.209 INCHES MINIMUM AND 0.230 INCHES MAXIMUM
OVERALL LENGTH: 0.075 INCHES NOMINAL
POWER RATING PER CHARACTERISTIC: 7.0 WATTS NOMINAL AVERAGE OFF-STATE POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: NPN
TERMINAL LENGTH: 1.000 INCHES NOMINAL
TERMINAL TYPE AND QUANTITY: 3 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 80.0 MINIMUM COLLECTOR TO BASE VOLTAGE, DC AND 60.0 NOMINAL COLLECTOR TO EMITTER VOLTAGE, DC
Related Searches:
SDT5002
TRANSISTOR
NSN, MFG P/N
5961011746640
NSN
5961-01-174-6640
MFG
SOLITRON DEVICES INC.
Description
ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE: COLLECTOR
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: JUNCTION CONTACT
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: TO-46
MOUNTING FACILITY QUANTITY: 3
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.209 INCHES MINIMUM AND 0.230 INCHES MAXIMUM
OVERALL LENGTH: 0.075 INCHES NOMINAL
POWER RATING PER CHARACTERISTIC: 7.0 WATTS NOMINAL AVERAGE OFF-STATE POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: NPN
TERMINAL LENGTH: 1.000 INCHES NOMINAL
TERMINAL TYPE AND QUANTITY: 3 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 80.0 MINIMUM COLLECTOR TO BASE VOLTAGE, DC AND 60.0 NOMINAL COLLECTOR TO EMITTER VOLTAGE, DC
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IRF530
TRANSISTOR
NSN, MFG P/N
5961011746641
NSN
5961-01-174-6641
MFG
DEAN TECHNOLOGY INC. DBA CKE
Description
(NON-CORE DATA) CHANNEL POLARITY AND CONTROL TYPE: N-CHANNEL INSULATED GATE TYPE
CURRENT RATING PER CHARACTERISTIC: 10.00 AMPERES MINIMUM DRAIN CURRENT
INCLOSURE MATERIAL: PLASTIC
INTERNAL CONFIGURATION: FIELD EFFECT
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 150.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
OVERALL HEIGHT: 0.546 INCHES NOMINAL
OVERALL LENGTH: 0.705 INCHES NOMINAL
OVERALL WIDTH: 0.400 INCHES NOMINAL
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL LENGTH: 0.381 INCHES NOMINAL
TERMINAL TYPE AND QUANTITY: 3 PIN
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 100.0 NOMINAL DRAIN TO SOURCE VOLTAGE AND 1.5 MINIMUM GATE TO SOURCE VOLTAGE AND 3.5 MAXIMUM GATE TO SOURCE VOLTAGE
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BZX79C20
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961011746642
NSN
5961-01-174-6642
MFG
AMPEREX ELECTRONIC CORP
Description
CAPACITANCE RATING IN PICOFARADS: 36.0 NOMINAL
CURRENT RATING PER CHARACTERISTIC: 250.00 MILLIAMPERES NOMINAL FORWARD CURRENT, DC AND 250.00 MILLIAMPERES NOMINAL FORWARD CURRENT, REPETITIVE, MAXIMUM PEAK TOTAL VALUE
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.072 INCHES MAXIMUM
OVERALL LENGTH: 0.177 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 400.0 MILLIWATTS NOMINAL ON-STATE POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL LENGTH: 1.000 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 20.0 NOMINAL REGULATOR VOLTAGE, DC
VOLTAGE TOLERANCE IN PERCENT: -5.0 TO 5.0
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11504176-1
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961011747035
NSN
5961-01-174-7035
11504176-1
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961011747035
NSN
5961-01-174-7035
MFG
U S ARMY AVIATION AND MISSILE COMMAND
Description
SEMICONDUCTOR DEVICE,DIODE
Related Searches:
736197-1
TRANSISTOR
NSN, MFG P/N
5961011747637
NSN
5961-01-174-7637
MFG
RAYTHEON COMPANY DBA RAYTHEON
Description
TRANSISTOR
Related Searches:
0N516327-2
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961011747781
NSN
5961-01-174-7781
0N516327-2
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961011747781
NSN
5961-01-174-7781
MFG
NATIONAL SECURITY AGENCY
Description
SEMICONDUCTOR DEVICE,DIODE
Related Searches:
10684
TRANSISTOR
NSN, MFG P/N
5961011747899
NSN
5961-01-174-7899
MFG
ELECTRONIC NAVIGATION INDUSTRIES INC DIV OF ASTEC AMERICA INC
Description
DESIGN CONTROL REFERENCE: 10684
INCLOSURE MATERIAL: METAL
MANUFACTURERS CODE: 10226
MOUNTING METHOD: TERMINAL
TERMINAL TYPE AND QUANTITY: 2 PIN AND 1 CASE
THE MANUFACTURERS DATA:
Related Searches:
48-82363E03
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961011747979
NSN
5961-01-174-7979
48-82363E03
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961011747979
NSN
5961-01-174-7979
MFG
MOTOROLA COMMUNICATIONS GROUP PARTS DEPT DIV OF MOTOROLA INC
Description
DESIGN CONTROL REFERENCE: 48-83654H06
MANUFACTURERS CODE: 50012
MOUNTING METHOD: TERMINAL
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL CIRCLE DIAMETER: 0.016 INCHES NOMINAL
TERMINAL LENGTH: 1.312 INCHES NOMINAL
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
THE MANUFACTURERS DATA:
Related Searches:
4882363E03
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961011747979
NSN
5961-01-174-7979
4882363E03
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961011747979
NSN
5961-01-174-7979
MFG
MOTOROLA INC. DBA INTEGRATED INFORMATION SYSTEMS GROUP
Description
DESIGN CONTROL REFERENCE: 48-83654H06
MANUFACTURERS CODE: 50012
MOUNTING METHOD: TERMINAL
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL CIRCLE DIAMETER: 0.016 INCHES NOMINAL
TERMINAL LENGTH: 1.312 INCHES NOMINAL
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
THE MANUFACTURERS DATA:
Related Searches:
MR2006S
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961011747980
NSN
5961-01-174-7980
MFG
FREESCALE SEMICONDUCTOR INC.
Description
ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE: CATHODE
INCLOSURE MATERIAL: CERAMIC AND METAL
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: DO-4
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 175.0 DEG CELSIUS JUNCTION
MOUNTING FACILITY QUANTITY: 1
MOUNTING METHOD: THREADED STUD
NOMINAL THREAD SIZE: 0.190 INCHES
OVERALL LENGTH: 1.253 INCHES MAXIMUM
OVERALL WIDTH: 0.500 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 1 THREADED STUD AND 1 WIRE HOOK
THREAD QUANTITY PER INCH: 32
THREAD SERIES DESIGNATOR: UNF
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 600.0 MAXIMUM REPETITIVE PEAK REVERSE VOLTAGE AND 720.0 MAXIMUM NONREPETITIVE PEAK REVERSE VOLTAGE
Related Searches:
736213-1
TRANSISTOR
NSN, MFG P/N
5961011748650
NSN
5961-01-174-8650
MFG
RAYTHEON TECHNICAL SERVICES COMPANY LLC DBA RAYTHEON
Description
TRANSISTOR
Related Searches:
KP3462
TRANSISTOR
NSN, MFG P/N
5961011748650
NSN
5961-01-174-8650
MFG
MICROSEMI PPC INC
Description
TRANSISTOR
Related Searches:
PST-1308
TRANSISTOR
NSN, MFG P/N
5961011748650
NSN
5961-01-174-8650
MFG
SPACE ENVIRONMENT LABS
Description
TRANSISTOR
Related Searches:
1127320503
RECTIFIER,SEMICONDUCTOR DEVICE,UNITIZED
NSN, MFG P/N
5961011748652
NSN
5961-01-174-8652
1127320503
RECTIFIER,SEMICONDUCTOR DEVICE,UNITIZED
NSN, MFG P/N
5961011748652
NSN
5961-01-174-8652
MFG
BOSCH ROBERT CORP
Description
RECTIFIER,SEMICONDUCTOR DEVICE,UNITIZED
Related Searches:
3T1887
RECTIFIER,SEMICONDUCTOR DEVICE,UNITIZED
NSN, MFG P/N
5961011748652
NSN
5961-01-174-8652
3T1887
RECTIFIER,SEMICONDUCTOR DEVICE,UNITIZED
NSN, MFG P/N
5961011748652
NSN
5961-01-174-8652
MFG
CATERPILLAR INC. DBA CATERPILLAR DIV GOVERNMENTAL AND DEFENSE PRODUCTS
Description
RECTIFIER,SEMICONDUCTOR DEVICE,UNITIZED
Related Searches:
040-41043-26
SEMICONDUCTOR DEVICE ASSEMBLY
NSN, MFG P/N
5961011748654
NSN
5961-01-174-8654
040-41043-26
SEMICONDUCTOR DEVICE ASSEMBLY
NSN, MFG P/N
5961011748654
NSN
5961-01-174-8654
MFG
KATO ENGINEERING INC.
Description
MAJOR COMPONENTS: DIODE 6; HEAT SINK 4; HUB 1; TERMINAL 1
Related Searches:
052399
SEMICONDUCTOR DEVICE ASSEMBLY
NSN, MFG P/N
5961011748655
NSN
5961-01-174-8655
MFG
MILLER ELECTRIC MFG CO
Description
MAJOR COMPONENTS: DIODE 6; CAPACITOR 6; HEATSINK 3
