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5961-01-184-6232
20 Products
152-0686-00
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961011846232
NSN
5961-01-184-6232
152-0686-00
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961011846232
NSN
5961-01-184-6232
MFG
TEKTRONIX INC. DBA TEKTRONIX
Description
SEMICONDUCTOR DEVICE,DIODE
Related Searches:
SR3273
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961011846232
NSN
5961-01-184-6232
MFG
FREESCALE SEMICONDUCTOR INC.
Description
SEMICONDUCTOR DEVICE,DIODE
Related Searches:
BP15393
COVER,SEMICONDUCTOR DEVICE
NSN, MFG P/N
5961011846347
NSN
5961-01-184-6347
MFG
BURKE PRODUCTS INC.
Description
BODY HEIGHT: 0.425 INCHES NOMINAL
BODY LENGTH: 1.580 INCHES NOMINAL
BODY WIDTH: 1.130 INCHES NOMINAL
MATERIAL: ALUMINUM
SURFACE TREATMENT: ANY ACCEPTABLE
Related Searches:
SIA-1634
COVER,SEMICONDUCTOR DEVICE
NSN, MFG P/N
5961011846347
NSN
5961-01-184-6347
MFG
SIGMATION INC
Description
BODY HEIGHT: 0.425 INCHES NOMINAL
BODY LENGTH: 1.580 INCHES NOMINAL
BODY WIDTH: 1.130 INCHES NOMINAL
MATERIAL: ALUMINUM
SURFACE TREATMENT: ANY ACCEPTABLE
Related Searches:
SM-C-876985
COVER,SEMICONDUCTOR DEVICE
NSN, MFG P/N
5961011846347
NSN
5961-01-184-6347
SM-C-876985
COVER,SEMICONDUCTOR DEVICE
NSN, MFG P/N
5961011846347
NSN
5961-01-184-6347
MFG
US ARMY COMMUNICATIONS & ELECTRONICS MATERIEL READINESS COMMAND LOGISTICS ENGINEERING DIR
Description
BODY HEIGHT: 0.425 INCHES NOMINAL
BODY LENGTH: 1.580 INCHES NOMINAL
BODY WIDTH: 1.130 INCHES NOMINAL
MATERIAL: ALUMINUM
SURFACE TREATMENT: ANY ACCEPTABLE
Related Searches:
03SW104
TRANSISTOR
NSN, MFG P/N
5961011846564
NSN
5961-01-184-6564
MFG
SOLITRON DEVICES INC.
Description
CURRENT RATING PER CHARACTERISTIC: 5.00 AMPERES MAXIMUM COLLECTOR CURRENT, DC
ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE: COLLECTOR
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: JUNCTION CONTACT-DARLINGTON CONNECTED
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 200.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.365 INCHES MAXIMUM
OVERALL LENGTH: 0.202 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 5.0 WATTS MAXIMUM COLLECTOR POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: NPN
TERMINAL CIRCLE DIAMETER: 0.200 INCHES NOMINAL
TERMINAL LENGTH: 0.500 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 4 UNINSULATED WIRE LEAD
TRANSFER RATIO: 200.0 MINIMUM STATIC FORWARD CURRENT TRANSFER RATIO, COMMON-EMITTER
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 120.0 MAXIMUM COLLECTOR TO BASE VOLTAGE, DC AND 120.0 MAXIMUM COLLECTOR TO EMITTER VOLTAGE, DC AN
Related Searches:
932141-3
TRANSISTOR
NSN, MFG P/N
5961011846564
NSN
5961-01-184-6564
MFG
NORTHROP GRUMMAN GUIDANCE AND ELECTRONICS COMPANY INC. DBA NAVIGATION SYSTEMS DIVISION DIV NAVIGATION SYSTEMS DIVISION
Description
CURRENT RATING PER CHARACTERISTIC: 5.00 AMPERES MAXIMUM COLLECTOR CURRENT, DC
ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE: COLLECTOR
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: JUNCTION CONTACT-DARLINGTON CONNECTED
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 200.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.365 INCHES MAXIMUM
OVERALL LENGTH: 0.202 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 5.0 WATTS MAXIMUM COLLECTOR POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: NPN
TERMINAL CIRCLE DIAMETER: 0.200 INCHES NOMINAL
TERMINAL LENGTH: 0.500 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 4 UNINSULATED WIRE LEAD
TRANSFER RATIO: 200.0 MINIMUM STATIC FORWARD CURRENT TRANSFER RATIO, COMMON-EMITTER
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 120.0 MAXIMUM COLLECTOR TO BASE VOLTAGE, DC AND 120.0 MAXIMUM COLLECTOR TO EMITTER VOLTAGE, DC AN
Related Searches:
SJ9098
TRANSISTOR
NSN, MFG P/N
5961011846564
NSN
5961-01-184-6564
MFG
FREESCALE SEMICONDUCTOR INC.
Description
CURRENT RATING PER CHARACTERISTIC: 5.00 AMPERES MAXIMUM COLLECTOR CURRENT, DC
ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE: COLLECTOR
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: JUNCTION CONTACT-DARLINGTON CONNECTED
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 200.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.365 INCHES MAXIMUM
OVERALL LENGTH: 0.202 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 5.0 WATTS MAXIMUM COLLECTOR POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: NPN
TERMINAL CIRCLE DIAMETER: 0.200 INCHES NOMINAL
TERMINAL LENGTH: 0.500 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 4 UNINSULATED WIRE LEAD
TRANSFER RATIO: 200.0 MINIMUM STATIC FORWARD CURRENT TRANSFER RATIO, COMMON-EMITTER
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 120.0 MAXIMUM COLLECTOR TO BASE VOLTAGE, DC AND 120.0 MAXIMUM COLLECTOR TO EMITTER VOLTAGE, DC AN
Related Searches:
STA6237
TRANSISTOR
NSN, MFG P/N
5961011846564
NSN
5961-01-184-6564
MFG
SILICON TRANSISTOR CORP SUB OF BBF INC
Description
CURRENT RATING PER CHARACTERISTIC: 5.00 AMPERES MAXIMUM COLLECTOR CURRENT, DC
ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE: COLLECTOR
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: JUNCTION CONTACT-DARLINGTON CONNECTED
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 200.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.365 INCHES MAXIMUM
OVERALL LENGTH: 0.202 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 5.0 WATTS MAXIMUM COLLECTOR POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: NPN
TERMINAL CIRCLE DIAMETER: 0.200 INCHES NOMINAL
TERMINAL LENGTH: 0.500 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 4 UNINSULATED WIRE LEAD
TRANSFER RATIO: 200.0 MINIMUM STATIC FORWARD CURRENT TRANSFER RATIO, COMMON-EMITTER
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 120.0 MAXIMUM COLLECTOR TO BASE VOLTAGE, DC AND 120.0 MAXIMUM COLLECTOR TO EMITTER VOLTAGE, DC AN
Related Searches:
U2T2062
TRANSISTOR
NSN, MFG P/N
5961011846564
NSN
5961-01-184-6564
MFG
MICRO USPD INC
Description
CURRENT RATING PER CHARACTERISTIC: 5.00 AMPERES MAXIMUM COLLECTOR CURRENT, DC
ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE: COLLECTOR
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: JUNCTION CONTACT-DARLINGTON CONNECTED
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 200.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.365 INCHES MAXIMUM
OVERALL LENGTH: 0.202 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 5.0 WATTS MAXIMUM COLLECTOR POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: NPN
TERMINAL CIRCLE DIAMETER: 0.200 INCHES NOMINAL
TERMINAL LENGTH: 0.500 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 4 UNINSULATED WIRE LEAD
TRANSFER RATIO: 200.0 MINIMUM STATIC FORWARD CURRENT TRANSFER RATIO, COMMON-EMITTER
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 120.0 MAXIMUM COLLECTOR TO BASE VOLTAGE, DC AND 120.0 MAXIMUM COLLECTOR TO EMITTER VOLTAGE, DC AN
Related Searches:
7847499
RECTIFIER,SEMICONDUCTOR DEVICE,UNITIZED
NSN, MFG P/N
5961011846641
NSN
5961-01-184-6641
7847499
RECTIFIER,SEMICONDUCTOR DEVICE,UNITIZED
NSN, MFG P/N
5961011846641
NSN
5961-01-184-6641
MFG
LOCKHEED MARTIN CORPORATION DBA MS2 DIV MS2 RADAR SYSTEMS
Description
CIRCUIT CONNECTION STYLE DESIGNATOR: A1 HALF-WAVE 1 PHASE
III END ITEM IDENTIFICATION: CLASSIFYING-DETECTING SET AN/SQQ-30
MATERIAL: SILICON
OPERATING TEMP RANGE: -55.0 TO 150.0 DEG CELSIUS
OVERALL DIAMETER: 0.500 INCHES NOMINAL
OVERALL LENGTH: 1.125 INCHES NOMINAL
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
Related Searches:
SCH5000
RECTIFIER,SEMICONDUCTOR DEVICE,UNITIZED
NSN, MFG P/N
5961011846641
NSN
5961-01-184-6641
SCH5000
RECTIFIER,SEMICONDUCTOR DEVICE,UNITIZED
NSN, MFG P/N
5961011846641
NSN
5961-01-184-6641
MFG
SEMTECH CORPORATION
Description
CIRCUIT CONNECTION STYLE DESIGNATOR: A1 HALF-WAVE 1 PHASE
III END ITEM IDENTIFICATION: CLASSIFYING-DETECTING SET AN/SQQ-30
MATERIAL: SILICON
OPERATING TEMP RANGE: -55.0 TO 150.0 DEG CELSIUS
OVERALL DIAMETER: 0.500 INCHES NOMINAL
OVERALL LENGTH: 1.125 INCHES NOMINAL
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
Related Searches:
357-0028
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961011848242
NSN
5961-01-184-8242
MFG
ONAN CORPORATION DBA CUMMINS POWER GENERATION
Description
SEMICONDUCTOR DEVICE,DIODE
Related Searches:
1N829
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961011848500
NSN
5961-01-184-8500
MFG
MICROSEMI CORP.-SCOTTSDALE DBA MICROSEMI
Description
CURRENT RATING PER CHARACTERISTIC: 7.50 MILLIAMPERES MAXIMUM BASE CUTOFF CURRENT
FEATURES PROVIDED: HERMETICALLY SEALED CASE
III END ITEM IDENTIFICATION: B1B PACER BEE
INCLOSURE MATERIAL: GLASS
MANUFACTURERS CODE: 81205
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 175.0 DEG CELSIUS AMBIENT AIR
MFR SOURCE CONTROLLING REFERENCE: 229-10709-1
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.092 INCHES MINIMUM AND 0.130 INCHES MAXIMUM
OVERALL LENGTH: 0.230 INCHES MINIMUM AND 0.300 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 250.0 MILLIWATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPEC/STD CONTROLLING DATA:
SPECIAL FEATURES: SAME AS JANTX1N829 EXCEPT FOR PLUS OR MINUS 1 PERCENT VOLTAGE SELECT
SPECIFICATION/STANDARD DATA: 81349-MIL-S-19500/159 GOVERNMENT SPECIFICATION
TERMINAL LENGTH: 1.000 INCHES MINIMUM AND 1.500 INCHES MAXIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
TEST DATA DOCUMENT: 81349-MIL-S-19500 SPECIFICATION
VOLT
Related Searches:
229-10709-1
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961011848500
NSN
5961-01-184-8500
229-10709-1
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961011848500
NSN
5961-01-184-8500
MFG
THE BOEING COMPANY DBA BOEING
Description
CURRENT RATING PER CHARACTERISTIC: 7.50 MILLIAMPERES MAXIMUM BASE CUTOFF CURRENT
FEATURES PROVIDED: HERMETICALLY SEALED CASE
III END ITEM IDENTIFICATION: B1B PACER BEE
INCLOSURE MATERIAL: GLASS
MANUFACTURERS CODE: 81205
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 175.0 DEG CELSIUS AMBIENT AIR
MFR SOURCE CONTROLLING REFERENCE: 229-10709-1
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.092 INCHES MINIMUM AND 0.130 INCHES MAXIMUM
OVERALL LENGTH: 0.230 INCHES MINIMUM AND 0.300 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 250.0 MILLIWATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPEC/STD CONTROLLING DATA:
SPECIAL FEATURES: SAME AS JANTX1N829 EXCEPT FOR PLUS OR MINUS 1 PERCENT VOLTAGE SELECT
SPECIFICATION/STANDARD DATA: 81349-MIL-S-19500/159 GOVERNMENT SPECIFICATION
TERMINAL LENGTH: 1.000 INCHES MINIMUM AND 1.500 INCHES MAXIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
TEST DATA DOCUMENT: 81349-MIL-S-19500 SPECIFICATION
VOLT
Related Searches:
2N3870
SEMICONDUCTOR DEVICE,THYRISTOR
NSN, MFG P/N
5961011848503
NSN
5961-01-184-8503
2N3870
SEMICONDUCTOR DEVICE,THYRISTOR
NSN, MFG P/N
5961011848503
NSN
5961-01-184-8503
MFG
FREESCALE SEMICONDUCTOR INC.
Description
CURRENT RATING PER CHARACTERISTIC: 22.00 AMPERES MAXIMUM ON-STATE CURRENT, AVERAGE
INCLOSURE MATERIAL: METAL
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 65.0 DEG CELSIUS AMBIENT AIR
OVERALL DIAMETER: 0.505 INCHES NOMINAL
OVERALL LENGTH: 0.800 INCHES NOMINAL
TERMINAL TYPE AND QUANTITY: 2 TAB, SOLDER LUG
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 100.0 MAXIMUM REPETITIVE PEAK OFF-STATE VOLTAGE
Related Searches:
006996
TRANSISTOR
NSN, MFG P/N
5961011848887
NSN
5961-01-184-8887
MFG
GE AVIATION SYSTEMS LLC DBA GE AVIATION DIV CUSTOMER SERVICES
Description
III END ITEM IDENTIFICATION: F-16 AIRCRAFT
INCLOSURE MATERIAL: METAL
MANUFACTURERS CODE: 058R3
MFR SOURCE CONTROLLING REFERENCE: 006996
MOUNTING METHOD: TERMINAL
OVERALL LENGTH: 0.150 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
SPEC/STD CONTROLLING DATA:
TERMINAL TYPE AND QUANTITY: 1 CASE AND 3 PIN
Related Searches:
4839
TRANSISTOR
NSN, MFG P/N
5961011848887
NSN
5961-01-184-8887
MFG
SILICONIX INCORPORATED D IV SILICONIX
Description
III END ITEM IDENTIFICATION: F-16 AIRCRAFT
INCLOSURE MATERIAL: METAL
MANUFACTURERS CODE: 058R3
MFR SOURCE CONTROLLING REFERENCE: 006996
MOUNTING METHOD: TERMINAL
OVERALL LENGTH: 0.150 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
SPEC/STD CONTROLLING DATA:
TERMINAL TYPE AND QUANTITY: 1 CASE AND 3 PIN
Related Searches:
SNF1114
TRANSISTOR
NSN, MFG P/N
5961011848887
NSN
5961-01-184-8887
MFG
SILICON TRANSISTOR CORP SUB OF BBF INC
Description
III END ITEM IDENTIFICATION: F-16 AIRCRAFT
INCLOSURE MATERIAL: METAL
MANUFACTURERS CODE: 058R3
MFR SOURCE CONTROLLING REFERENCE: 006996
MOUNTING METHOD: TERMINAL
OVERALL LENGTH: 0.150 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
SPEC/STD CONTROLLING DATA:
TERMINAL TYPE AND QUANTITY: 1 CASE AND 3 PIN
Related Searches:
SNF1116
TRANSISTOR
NSN, MFG P/N
5961011848887
NSN
5961-01-184-8887
MFG
MICROSEMI CORP. - MASSACHUSETTS DBA MICROSEMI-LAWRENCE DIV MICROSEMI CORPORATION
Description
III END ITEM IDENTIFICATION: F-16 AIRCRAFT
INCLOSURE MATERIAL: METAL
MANUFACTURERS CODE: 058R3
MFR SOURCE CONTROLLING REFERENCE: 006996
MOUNTING METHOD: TERMINAL
OVERALL LENGTH: 0.150 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
SPEC/STD CONTROLLING DATA:
TERMINAL TYPE AND QUANTITY: 1 CASE AND 3 PIN
