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5961-01-202-2432
20 Products
1KAB20E
RECTIFIER,SEMICONDUCTOR DEVICE,UNITIZED
NSN, MFG P/N
5961012022432
NSN
5961-01-202-2432
1KAB20E
RECTIFIER,SEMICONDUCTOR DEVICE,UNITIZED
NSN, MFG P/N
5961012022432
NSN
5961-01-202-2432
MFG
INTERNATIONAL RECTIFIER CORP ORATION USE CAGE CODE 81483 FOR CATALOGING.
Description
ABSOLUTE MAXIMUM CURRENT RATING PER CHARACTERISTIC: 1.20 AMPERES AVERAGE FORWARD CURRENT AVERAGED OVER A FULL 60-HZ CYCLE
ABSOLUTE MAXIMUM VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 200.0 REPETITIVE PEAK REVERSE VOLTAGE
CIRCUIT CONNECTION STYLE DESIGNATOR: A7 BRIDGE 1 PHASE
MATERIAL: SILICON
MOUNTING METHOD: TERMINAL
OVERALL HEIGHT: 0.390 INCHES NOMINAL
OVERALL LENGTH: 0.390 INCHES NOMINAL
OVERALL WIDTH: 0.390 INCHES NOMINAL
TERMINAL TYPE AND QUANTITY: 4 UNINSULATED WIRE LEAD
Related Searches:
300-003
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961012022636
NSN
5961-01-202-2636
MFG
WAGNER ENGINEERING LTD
Description
SEMICONDUCTOR DEVICE,DIODE
Related Searches:
70H60A
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961012022652
NSN
5961-01-202-2652
MFG
TRW INC TRW ELECTRONIC COMPONENTS IRC FIXED RESISTORS PHILADELPHIA DIV
Description
CURRENT RATING PER CHARACTERISTIC: 70.00 AMPERES MAXIMUM FORWARD CURRENT, DC
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: D0-5
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 140.0 DEG CELSIUS CASE
MOUNTING FACILITY QUANTITY: 1
MOUNTING METHOD: THREADED STUD
NOMINAL THREAD SIZE: 0.250 INCHES
OVERALL LENGTH: 1.453 INCHES NOMINAL
OVERALL WIDTH ACROSS FLATS: 0.687 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 1 THREADED STUD AND 1 TAB W/WIRE LEAD
THREAD SERIES DESIGNATOR: UNF
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 600.0 MAXIMUM REPETITIVE PEAK REVERSE VOLTAGE
Related Searches:
70HF60
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961012022652
NSN
5961-01-202-2652
MFG
INTERNATIONAL RECTIFIER CORP ORATION USE CAGE CODE 81483 FOR CATALOGING.
Description
CURRENT RATING PER CHARACTERISTIC: 70.00 AMPERES MAXIMUM FORWARD CURRENT, DC
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: D0-5
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 140.0 DEG CELSIUS CASE
MOUNTING FACILITY QUANTITY: 1
MOUNTING METHOD: THREADED STUD
NOMINAL THREAD SIZE: 0.250 INCHES
OVERALL LENGTH: 1.453 INCHES NOMINAL
OVERALL WIDTH ACROSS FLATS: 0.687 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 1 THREADED STUD AND 1 TAB W/WIRE LEAD
THREAD SERIES DESIGNATOR: UNF
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 600.0 MAXIMUM REPETITIVE PEAK REVERSE VOLTAGE
Related Searches:
571200031
TRANSISTOR
NSN, MFG P/N
5961012022856
NSN
5961-01-202-2856
MFG
CONCURRENT COMPUTER CORPORATION
Description
CURRENT RATING PER CHARACTERISTIC: 4.00 AMPERES MAXIMUM COLLECTOR CURRENT, DC
INCLOSURE MATERIAL: PLASTIC
INTERNAL CONFIGURATION: JUNCTION CONTACT-DARLINGTON CONNECTED
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: TO-220
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 150.0 DEG CELSIUS CASE
MOUNTING FACILITY QUANTITY: 1
MOUNTING METHOD: TERMINAL AND UNTHREADED HOLE
OVERALL HEIGHT: 0.270 INCHES MAXIMUM
OVERALL LENGTH: 0.625 INCHES MAXIMUM
OVERALL WIDTH: 0.405 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 60.0 WATTS MAXIMUM TOTAL DEVICE DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: PNP
TERMINAL LENGTH: 0.562 INCHES MAXIMUM
TERMINAL TYPE AND QUANTITY: 3 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 2.0 MAXIMUM COLLECTOR TO EMITTER SATURATION VOLTAGE
Related Searches:
SE9400
TRANSISTOR
NSN, MFG P/N
5961012022856
NSN
5961-01-202-2856
MFG
NATIONAL SEMICONDUCTOR CORPORATION
Description
CURRENT RATING PER CHARACTERISTIC: 4.00 AMPERES MAXIMUM COLLECTOR CURRENT, DC
INCLOSURE MATERIAL: PLASTIC
INTERNAL CONFIGURATION: JUNCTION CONTACT-DARLINGTON CONNECTED
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: TO-220
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 150.0 DEG CELSIUS CASE
MOUNTING FACILITY QUANTITY: 1
MOUNTING METHOD: TERMINAL AND UNTHREADED HOLE
OVERALL HEIGHT: 0.270 INCHES MAXIMUM
OVERALL LENGTH: 0.625 INCHES MAXIMUM
OVERALL WIDTH: 0.405 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 60.0 WATTS MAXIMUM TOTAL DEVICE DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: PNP
TERMINAL LENGTH: 0.562 INCHES MAXIMUM
TERMINAL TYPE AND QUANTITY: 3 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 2.0 MAXIMUM COLLECTOR TO EMITTER SATURATION VOLTAGE
Related Searches:
80920-1
TRANSISTOR
NSN, MFG P/N
5961012024496
NSN
5961-01-202-4496
MFG
HAMILTON SUNDSTRAND CORPORATION
Description
CURRENT RATING PER CHARACTERISTIC: 7.00 AMPERES MAXIMUM COLLECTOR CURRENT, DC AND 1.00 AMPERES MAXIMUM BASE CURRENT, DC
ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE: COLLECTOR
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: JUNCTION CONTACT
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: TO-66
MANUFACTURERS CODE: 73030
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 200.0 DEG CELSIUS JUNCTION
MFR SOURCE CONTROLLING REFERENCE: 80920-1
MOUNTING FACILITY QUANTITY: 2
MOUNTING METHOD: UNTHREADED HOLE
OVERALL HEIGHT: 0.340 INCHES MAXIMUM
OVERALL LENGTH: 1.252 INCHES MAXIMUM
OVERALL WIDTH: 0.700 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 40.0 WATTS MAXIMUM TOTAL DEVICE DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPEC/STD CONTROLLING DATA:
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: PNP
TERMINAL TYPE AND QUANTITY: 2 PIN AND 1 CASE
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC:
Related Searches:
AC3525
TRANSISTOR
NSN, MFG P/N
5961012024496
NSN
5961-01-202-4496
MFG
API ELECTRONICS INC.
Description
CURRENT RATING PER CHARACTERISTIC: 7.00 AMPERES MAXIMUM COLLECTOR CURRENT, DC AND 1.00 AMPERES MAXIMUM BASE CURRENT, DC
ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE: COLLECTOR
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: JUNCTION CONTACT
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: TO-66
MANUFACTURERS CODE: 73030
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 200.0 DEG CELSIUS JUNCTION
MFR SOURCE CONTROLLING REFERENCE: 80920-1
MOUNTING FACILITY QUANTITY: 2
MOUNTING METHOD: UNTHREADED HOLE
OVERALL HEIGHT: 0.340 INCHES MAXIMUM
OVERALL LENGTH: 1.252 INCHES MAXIMUM
OVERALL WIDTH: 0.700 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 40.0 WATTS MAXIMUM TOTAL DEVICE DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPEC/STD CONTROLLING DATA:
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: PNP
TERMINAL TYPE AND QUANTITY: 2 PIN AND 1 CASE
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC:
Related Searches:
NSA3009
TRANSISTOR
NSN, MFG P/N
5961012024496
NSN
5961-01-202-4496
MFG
MICROSEMI CORP. - MASSACHUSETTS DBA MICROSEMI-LAWRENCE DIV MICROSEMI CORPORATION
Description
CURRENT RATING PER CHARACTERISTIC: 7.00 AMPERES MAXIMUM COLLECTOR CURRENT, DC AND 1.00 AMPERES MAXIMUM BASE CURRENT, DC
ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE: COLLECTOR
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: JUNCTION CONTACT
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: TO-66
MANUFACTURERS CODE: 73030
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 200.0 DEG CELSIUS JUNCTION
MFR SOURCE CONTROLLING REFERENCE: 80920-1
MOUNTING FACILITY QUANTITY: 2
MOUNTING METHOD: UNTHREADED HOLE
OVERALL HEIGHT: 0.340 INCHES MAXIMUM
OVERALL LENGTH: 1.252 INCHES MAXIMUM
OVERALL WIDTH: 0.700 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 40.0 WATTS MAXIMUM TOTAL DEVICE DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPEC/STD CONTROLLING DATA:
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: PNP
TERMINAL TYPE AND QUANTITY: 2 PIN AND 1 CASE
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC:
Related Searches:
PP8807
TRANSISTOR
NSN, MFG P/N
5961012024496
NSN
5961-01-202-4496
MFG
MICROSEMI PPC INC
Description
CURRENT RATING PER CHARACTERISTIC: 7.00 AMPERES MAXIMUM COLLECTOR CURRENT, DC AND 1.00 AMPERES MAXIMUM BASE CURRENT, DC
ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE: COLLECTOR
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: JUNCTION CONTACT
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: TO-66
MANUFACTURERS CODE: 73030
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 200.0 DEG CELSIUS JUNCTION
MFR SOURCE CONTROLLING REFERENCE: 80920-1
MOUNTING FACILITY QUANTITY: 2
MOUNTING METHOD: UNTHREADED HOLE
OVERALL HEIGHT: 0.340 INCHES MAXIMUM
OVERALL LENGTH: 1.252 INCHES MAXIMUM
OVERALL WIDTH: 0.700 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 40.0 WATTS MAXIMUM TOTAL DEVICE DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPEC/STD CONTROLLING DATA:
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: PNP
TERMINAL TYPE AND QUANTITY: 2 PIN AND 1 CASE
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC:
Related Searches:
STK1004
TRANSISTOR
NSN, MFG P/N
5961012024496
NSN
5961-01-202-4496
MFG
SILICON TRANSISTOR CORP SUB OF BBF INC
Description
CURRENT RATING PER CHARACTERISTIC: 7.00 AMPERES MAXIMUM COLLECTOR CURRENT, DC AND 1.00 AMPERES MAXIMUM BASE CURRENT, DC
ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE: COLLECTOR
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: JUNCTION CONTACT
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: TO-66
MANUFACTURERS CODE: 73030
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 200.0 DEG CELSIUS JUNCTION
MFR SOURCE CONTROLLING REFERENCE: 80920-1
MOUNTING FACILITY QUANTITY: 2
MOUNTING METHOD: UNTHREADED HOLE
OVERALL HEIGHT: 0.340 INCHES MAXIMUM
OVERALL LENGTH: 1.252 INCHES MAXIMUM
OVERALL WIDTH: 0.700 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 40.0 WATTS MAXIMUM TOTAL DEVICE DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPEC/STD CONTROLLING DATA:
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: PNP
TERMINAL TYPE AND QUANTITY: 2 PIN AND 1 CASE
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC:
Related Searches:
652-1047-1
RECTIFIER,SEMICONDUCTOR DEVICE
NSN, MFG P/N
5961012024846
NSN
5961-01-202-4846
652-1047-1
RECTIFIER,SEMICONDUCTOR DEVICE
NSN, MFG P/N
5961012024846
NSN
5961-01-202-4846
MFG
MICRO USPD INC
Description
RECTIFIER,SEMICONDUCTOR DEVICE
Related Searches:
090000100
TRANSISTOR
NSN, MFG P/N
5961012024893
NSN
5961-01-202-4893
MFG
KUSTOM ELECTRONICS INC
Description
TRANSISTOR
Related Searches:
007603000
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961012024894
NSN
5961-01-202-4894
MFG
KUSTOM ELECTRONICS INC
Description
SEMICONDUCTOR DEVICE,DIODE
Related Searches:
5082-3529
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961012024894
NSN
5961-01-202-4894
MFG
HEWLETT PACKARD GMBH
Description
SEMICONDUCTOR DEVICE,DIODE
Related Searches:
007602300
SEMICONDUCTOR DEVICES,UNITIZED
NSN, MFG P/N
5961012024926
NSN
5961-01-202-4926
007602300
SEMICONDUCTOR DEVICES,UNITIZED
NSN, MFG P/N
5961012024926
NSN
5961-01-202-4926
MFG
KUSTOM ELECTRONICS INC
Description
SEMICONDUCTOR DEVICES,UNITIZED
Related Searches:
5082-3041
SEMICONDUCTOR DEVICES,UNITIZED
NSN, MFG P/N
5961012024926
NSN
5961-01-202-4926
5082-3041
SEMICONDUCTOR DEVICES,UNITIZED
NSN, MFG P/N
5961012024926
NSN
5961-01-202-4926
MFG
HEWLETT PACKARD GMBH
Description
SEMICONDUCTOR DEVICES,UNITIZED
Related Searches:
019-004523
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961012025094
NSN
5961-01-202-5094
019-004523
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961012025094
NSN
5961-01-202-5094
MFG
NORTHROP GRUMMAN SYSTEMS CORPORATION DIV MULTIPLE
Description
CURRENT RATING PER CHARACTERISTIC: 20.00 MILLIAMPERES NOMINAL VOLTAGE REGULATOR DIODE CURRENT
INCLOSURE MATERIAL: PLASTIC
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 200.0 DEG CELSIUS JUNCTION
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.092 INCHES MINIMUM AND 0.104 INCHES MAXIMUM
OVERALL LENGTH: 0.300 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL LENGTH: 1.000 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 7.5 NOMINAL REGULATOR VOLTAGE, DC
VOLTAGE TOLERANCE IN PERCENT: -10.0 TO 10.0
Related Searches:
1N5236A
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961012025094
NSN
5961-01-202-5094
MFG
FREESCALE SEMICONDUCTOR INC.
Description
CURRENT RATING PER CHARACTERISTIC: 20.00 MILLIAMPERES NOMINAL VOLTAGE REGULATOR DIODE CURRENT
INCLOSURE MATERIAL: PLASTIC
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 200.0 DEG CELSIUS JUNCTION
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.092 INCHES MINIMUM AND 0.104 INCHES MAXIMUM
OVERALL LENGTH: 0.300 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL LENGTH: 1.000 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 7.5 NOMINAL REGULATOR VOLTAGE, DC
VOLTAGE TOLERANCE IN PERCENT: -10.0 TO 10.0
Related Searches:
1N5551
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961012025095
NSN
5961-01-202-5095
MFG
MICROSEMI CORP.-SCOTTSDALE DBA MICROSEMI
Description
CURRENT RATING PER CHARACTERISTIC: 100.00 AMPERES MAXIMUM PEAK FORWARD SURGE CURRENT
INCLOSURE MATERIAL: GLASS
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 175.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.145 INCHES MAXIMUM
OVERALL LENGTH: 0.300 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL CIRCLE DIAMETER: 0.040 INCHES NOMINAL
TERMINAL LENGTH: 0.975 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
