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5961-01-219-6557
20 Products
353-2074-012
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961012196557
NSN
5961-01-219-6557
353-2074-012
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961012196557
NSN
5961-01-219-6557
MFG
ROCKWELL COLLINS INC. DIV GOVERNMENT SYSTEMS - DALLAS
Description
CURRENT RATING PER CHARACTERISTIC: 5.00 AMPERES MAXIMUM AVERAGE FORWARD CURRENT AVERAGED OVER A FULL 60-HZ CYCLE AND 70.00 AMPERES MAXIMUM SOURCE CURRENT
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: GLASS
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 150.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.145 INCHES MAXIMUM
OVERALL LENGTH: 0.300 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL LENGTH: 0.375 INCHES NOMINAL
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 400.0 MAXIMUM REVERSE VOLTAGE, PEAK
Related Searches:
MA4ST002-908
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961012194313
NSN
5961-01-219-4313
MA4ST002-908
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961012194313
NSN
5961-01-219-4313
MFG
M/A-COM INC. DBA TYCO ELECTRONIC WIRELESS SYSTEM
Description
CURRENT RATING PER CHARACTERISTIC: 50.00 MILLIAMPERES MAXIMUM FORWARD CURRENT, DC
III END ITEM IDENTIFICATION: AN/PRC-68A/B
INCLOSURE MATERIAL: GLASS
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 125.0 DEG CELSIUS JUNCTION
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.105 INCHES MAXIMUM
OVERALL LENGTH: 0.300 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 250.0 MILLIWATTS MAXIMUM TOTAL DEVICE DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL LENGTH: 1.000 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
TEST DATA DOCUMENT: 37695-61984 DRAWING
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 22.0 MAXIMUM REVERSE VOLTAGE, DC
Related Searches:
14519200-04
RECTIFIER,SEMICONDUCTOR DEVICE,UNITIZED
NSN, MFG P/N
5961012194453
NSN
5961-01-219-4453
14519200-04
RECTIFIER,SEMICONDUCTOR DEVICE,UNITIZED
NSN, MFG P/N
5961012194453
NSN
5961-01-219-4453
MFG
GENERAL DYNAMICS INFORMATION SYSTEMS INC. DBA GENERAL DYNAMICS ADVANCED INFORMATION SYSTEMS
Description
ABSOLUTE MAXIMUM VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 600.0 PEAK INVERSE VOLTAGE
CIRCUIT CONNECTION STYLE DESIGNATOR: A8 BRIDGE 3 PHASE
OPERATING TEMP RANGE: -55.0 TO 150.0 DEG CELSIUS
OVERALL HEIGHT: 0.270 INCHES MAXIMUM
OVERALL LENGTH: 1.270 INCHES MAXIMUM
OVERALL WIDTH: 0.770 INCHES MAXIMUM
TERMINAL TYPE AND QUANTITY: 5 TURRET
Related Searches:
775085-1
SEMICONDUCTOR DEVICE SET
NSN, MFG P/N
5961012194517
NSN
5961-01-219-4517
MFG
RAYTHEON COMPANY
Description
COMPONENT FUNCTION RELATIONSHIP: MATCHED
COMPONENT NAME AND QUANTITY: 2 SEMICONDUCTOR DEVICE DIODE
CURRENT RATING PER CHARACTERISTIC: 40.00 MILLIAMPERES MAXIMUM FORWARD CURRENT, DC ALL SEMICONDUCTOR DEVICE DIODE
FIELD FORCE EFFECT TYPE: ELECTROSTATIC CHARGE
III PRECIOUS MATERIAL AND LOCATION: CONTACT SURFACES PLATED GOLD
INCLOSURE MATERIAL: CERAMIC ALL SEMICONDUCTOR DEVICE DIODE
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 125.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: COMPRESSION ALL SEMICONDUCTOR DEVICE DIODE
OVERALL DIAMETER: 0.078 INCHES MINIMUM AND 0.084 INCHES MAXIMUM ALL SEMICONDUCTOR DEVICE DIODE
OVERALL LENGTH: 0.190 INCHES MINIMUM AND 0.210 INCHES MAXIMUM ALL SEMICONDUCTOR DEVICE DIODE
POWER RATING PER CHARACTERISTIC: 110.0 MILLIWATTS MAXIMUM TOTAL DEVICE DISSIPATION ALL SEMICONDUCTOR DEVICE DIODE
SEMICONDUCTOR MATERIAL: SILICON ALL SEMICONDUCTOR DEVICE DIODE
TERMINAL TYPE AND QUANTITY: 2 FERRULE ALL SEMICONDUCTOR DEVICE DIODE
TEST DATA DOCUMENT: 96214-775085
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A2X210M
SEMICONDUCTOR DEVICE SET
NSN, MFG P/N
5961012194517
NSN
5961-01-219-4517
MFG
FEI MICROWAVE INC
Description
COMPONENT FUNCTION RELATIONSHIP: MATCHED
COMPONENT NAME AND QUANTITY: 2 SEMICONDUCTOR DEVICE DIODE
CURRENT RATING PER CHARACTERISTIC: 40.00 MILLIAMPERES MAXIMUM FORWARD CURRENT, DC ALL SEMICONDUCTOR DEVICE DIODE
FIELD FORCE EFFECT TYPE: ELECTROSTATIC CHARGE
III PRECIOUS MATERIAL AND LOCATION: CONTACT SURFACES PLATED GOLD
INCLOSURE MATERIAL: CERAMIC ALL SEMICONDUCTOR DEVICE DIODE
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 125.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: COMPRESSION ALL SEMICONDUCTOR DEVICE DIODE
OVERALL DIAMETER: 0.078 INCHES MINIMUM AND 0.084 INCHES MAXIMUM ALL SEMICONDUCTOR DEVICE DIODE
OVERALL LENGTH: 0.190 INCHES MINIMUM AND 0.210 INCHES MAXIMUM ALL SEMICONDUCTOR DEVICE DIODE
POWER RATING PER CHARACTERISTIC: 110.0 MILLIWATTS MAXIMUM TOTAL DEVICE DISSIPATION ALL SEMICONDUCTOR DEVICE DIODE
SEMICONDUCTOR MATERIAL: SILICON ALL SEMICONDUCTOR DEVICE DIODE
TERMINAL TYPE AND QUANTITY: 2 FERRULE ALL SEMICONDUCTOR DEVICE DIODE
TEST DATA DOCUMENT: 96214-775085
Related Searches:
2690662-1
SEMICONDUCTOR DEVICE,THYRISTOR
NSN, MFG P/N
5961012196427
NSN
5961-01-219-6427
2690662-1
SEMICONDUCTOR DEVICE,THYRISTOR
NSN, MFG P/N
5961012196427
NSN
5961-01-219-6427
MFG
RAYTHEON COMPANY
Description
CURRENT RATING PER CHARACTERISTIC: 250.00 AMPERES MAXIMUM PEAK NONREPETITIVE SURGE CURRENT
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 125.0 DEG CELSIUS JUNCTION
MOUNTING FACILITY QUANTITY: 1
MOUNTING METHOD: THREADED STUD
OVERALL LENGTH: 1.735 INCHES MAXIMUM
OVERALL WIDTH ACROSS FLATS: 0.559 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 20.0 WATTS MAXIMUM PEAK GATE POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 3 TAB, SOLDER LUG
TEST DATA DOCUMENT: 96214-2690662 DRAWING
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 400.0 MAXIMUM REPETITIVE PEAK OFF-STATE VOLTAGE
Related Searches:
2N6164
SEMICONDUCTOR DEVICE,THYRISTOR
NSN, MFG P/N
5961012196427
NSN
5961-01-219-6427
2N6164
SEMICONDUCTOR DEVICE,THYRISTOR
NSN, MFG P/N
5961012196427
NSN
5961-01-219-6427
MFG
FREESCALE SEMICONDUCTOR INC.
Description
CURRENT RATING PER CHARACTERISTIC: 250.00 AMPERES MAXIMUM PEAK NONREPETITIVE SURGE CURRENT
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 125.0 DEG CELSIUS JUNCTION
MOUNTING FACILITY QUANTITY: 1
MOUNTING METHOD: THREADED STUD
OVERALL LENGTH: 1.735 INCHES MAXIMUM
OVERALL WIDTH ACROSS FLATS: 0.559 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 20.0 WATTS MAXIMUM PEAK GATE POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 3 TAB, SOLDER LUG
TEST DATA DOCUMENT: 96214-2690662 DRAWING
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 400.0 MAXIMUM REPETITIVE PEAK OFF-STATE VOLTAGE
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72519
SEMICONDUCTOR DEVICE,THYRISTOR
NSN, MFG P/N
5961012196427
NSN
5961-01-219-6427
MFG
HARRIS CORP SEMICONDUCTOR SECTOR
Description
CURRENT RATING PER CHARACTERISTIC: 250.00 AMPERES MAXIMUM PEAK NONREPETITIVE SURGE CURRENT
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 125.0 DEG CELSIUS JUNCTION
MOUNTING FACILITY QUANTITY: 1
MOUNTING METHOD: THREADED STUD
OVERALL LENGTH: 1.735 INCHES MAXIMUM
OVERALL WIDTH ACROSS FLATS: 0.559 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 20.0 WATTS MAXIMUM PEAK GATE POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 3 TAB, SOLDER LUG
TEST DATA DOCUMENT: 96214-2690662 DRAWING
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 400.0 MAXIMUM REPETITIVE PEAK OFF-STATE VOLTAGE
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SES452
SEMICONDUCTOR DEVICE,THYRISTOR
NSN, MFG P/N
5961012196427
NSN
5961-01-219-6427
SES452
SEMICONDUCTOR DEVICE,THYRISTOR
NSN, MFG P/N
5961012196427
NSN
5961-01-219-6427
MFG
SEMITRONICS CORP
Description
CURRENT RATING PER CHARACTERISTIC: 250.00 AMPERES MAXIMUM PEAK NONREPETITIVE SURGE CURRENT
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 125.0 DEG CELSIUS JUNCTION
MOUNTING FACILITY QUANTITY: 1
MOUNTING METHOD: THREADED STUD
OVERALL LENGTH: 1.735 INCHES MAXIMUM
OVERALL WIDTH ACROSS FLATS: 0.559 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 20.0 WATTS MAXIMUM PEAK GATE POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 3 TAB, SOLDER LUG
TEST DATA DOCUMENT: 96214-2690662 DRAWING
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 400.0 MAXIMUM REPETITIVE PEAK OFF-STATE VOLTAGE
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1855-0213
SEMICONDUCTOR DEVICES,UNITIZED
NSN, MFG P/N
5961012196429
NSN
5961-01-219-6429
1855-0213
SEMICONDUCTOR DEVICES,UNITIZED
NSN, MFG P/N
5961012196429
NSN
5961-01-219-6429
MFG
HEWLETT PACKARD CO
Description
(NON-CORE DATA) CHANNEL POLARITY AND CONTROL TYPE: N-CHANNEL JUNCTION TYPE
COMPONENT NAME AND QUANTITY: 2 TRANSISTOR
CURRENT RATING PER CHARACTERISTIC: 50.00 MILLIAMPERES MAXIMUM GATE CURRENT ALL TRANSISTOR
ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE: COLLECTOR
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: TO-78
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.370 INCHES MAXIMUM
OVERALL LENGTH: 0.185 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 0.5 WATTS MAXIMUM TOTAL POWER DISSIPATION ALL TRANSISTOR
SEMICONDUCTOR MATERIAL: SILICON ALL TRANSISTOR
TERMINAL CIRCLE DIAMETER: 0.200 INCHES NOMINAL
TERMINAL LENGTH: 0.500 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 8 UNINSULATED WIRE LEAD
TEST DATA DOCUMENT: 81413-231146 DRAWING
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: -25.0 MAXIMUM GATE TO SOURCE VOLTAGE ALL TRANSISTOR
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231146-001
SEMICONDUCTOR DEVICES,UNITIZED
NSN, MFG P/N
5961012196429
NSN
5961-01-219-6429
231146-001
SEMICONDUCTOR DEVICES,UNITIZED
NSN, MFG P/N
5961012196429
NSN
5961-01-219-6429
MFG
BAE SYSTEMS INFORMATION AND ELECTRONIC SYSTEMS INTEGRATION I
Description
(NON-CORE DATA) CHANNEL POLARITY AND CONTROL TYPE: N-CHANNEL JUNCTION TYPE
COMPONENT NAME AND QUANTITY: 2 TRANSISTOR
CURRENT RATING PER CHARACTERISTIC: 50.00 MILLIAMPERES MAXIMUM GATE CURRENT ALL TRANSISTOR
ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE: COLLECTOR
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: TO-78
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.370 INCHES MAXIMUM
OVERALL LENGTH: 0.185 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 0.5 WATTS MAXIMUM TOTAL POWER DISSIPATION ALL TRANSISTOR
SEMICONDUCTOR MATERIAL: SILICON ALL TRANSISTOR
TERMINAL CIRCLE DIAMETER: 0.200 INCHES NOMINAL
TERMINAL LENGTH: 0.500 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 8 UNINSULATED WIRE LEAD
TEST DATA DOCUMENT: 81413-231146 DRAWING
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: -25.0 MAXIMUM GATE TO SOURCE VOLTAGE ALL TRANSISTOR
Related Searches:
2N5912-2
SEMICONDUCTOR DEVICES,UNITIZED
NSN, MFG P/N
5961012196429
NSN
5961-01-219-6429
2N5912-2
SEMICONDUCTOR DEVICES,UNITIZED
NSN, MFG P/N
5961012196429
NSN
5961-01-219-6429
MFG
NATIONAL SEMICONDUCTOR CORPORATION
Description
(NON-CORE DATA) CHANNEL POLARITY AND CONTROL TYPE: N-CHANNEL JUNCTION TYPE
COMPONENT NAME AND QUANTITY: 2 TRANSISTOR
CURRENT RATING PER CHARACTERISTIC: 50.00 MILLIAMPERES MAXIMUM GATE CURRENT ALL TRANSISTOR
ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE: COLLECTOR
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: TO-78
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.370 INCHES MAXIMUM
OVERALL LENGTH: 0.185 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 0.5 WATTS MAXIMUM TOTAL POWER DISSIPATION ALL TRANSISTOR
SEMICONDUCTOR MATERIAL: SILICON ALL TRANSISTOR
TERMINAL CIRCLE DIAMETER: 0.200 INCHES NOMINAL
TERMINAL LENGTH: 0.500 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 8 UNINSULATED WIRE LEAD
TEST DATA DOCUMENT: 81413-231146 DRAWING
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: -25.0 MAXIMUM GATE TO SOURCE VOLTAGE ALL TRANSISTOR
Related Searches:
A10524
SEMICONDUCTOR DEVICES,UNITIZED
NSN, MFG P/N
5961012196429
NSN
5961-01-219-6429
A10524
SEMICONDUCTOR DEVICES,UNITIZED
NSN, MFG P/N
5961012196429
NSN
5961-01-219-6429
MFG
API ELECTRONICS INC.
Description
(NON-CORE DATA) CHANNEL POLARITY AND CONTROL TYPE: N-CHANNEL JUNCTION TYPE
COMPONENT NAME AND QUANTITY: 2 TRANSISTOR
CURRENT RATING PER CHARACTERISTIC: 50.00 MILLIAMPERES MAXIMUM GATE CURRENT ALL TRANSISTOR
ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE: COLLECTOR
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: TO-78
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.370 INCHES MAXIMUM
OVERALL LENGTH: 0.185 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 0.5 WATTS MAXIMUM TOTAL POWER DISSIPATION ALL TRANSISTOR
SEMICONDUCTOR MATERIAL: SILICON ALL TRANSISTOR
TERMINAL CIRCLE DIAMETER: 0.200 INCHES NOMINAL
TERMINAL LENGTH: 0.500 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 8 UNINSULATED WIRE LEAD
TEST DATA DOCUMENT: 81413-231146 DRAWING
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: -25.0 MAXIMUM GATE TO SOURCE VOLTAGE ALL TRANSISTOR
Related Searches:
DN1880
SEMICONDUCTOR DEVICES,UNITIZED
NSN, MFG P/N
5961012196429
NSN
5961-01-219-6429
DN1880
SEMICONDUCTOR DEVICES,UNITIZED
NSN, MFG P/N
5961012196429
NSN
5961-01-219-6429
MFG
EASTERN ENGINEERING SUPPLY INC
Description
(NON-CORE DATA) CHANNEL POLARITY AND CONTROL TYPE: N-CHANNEL JUNCTION TYPE
COMPONENT NAME AND QUANTITY: 2 TRANSISTOR
CURRENT RATING PER CHARACTERISTIC: 50.00 MILLIAMPERES MAXIMUM GATE CURRENT ALL TRANSISTOR
ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE: COLLECTOR
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: TO-78
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.370 INCHES MAXIMUM
OVERALL LENGTH: 0.185 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 0.5 WATTS MAXIMUM TOTAL POWER DISSIPATION ALL TRANSISTOR
SEMICONDUCTOR MATERIAL: SILICON ALL TRANSISTOR
TERMINAL CIRCLE DIAMETER: 0.200 INCHES NOMINAL
TERMINAL LENGTH: 0.500 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 8 UNINSULATED WIRE LEAD
TEST DATA DOCUMENT: 81413-231146 DRAWING
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: -25.0 MAXIMUM GATE TO SOURCE VOLTAGE ALL TRANSISTOR
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JAN2N5912
SEMICONDUCTOR DEVICES,UNITIZED
NSN, MFG P/N
5961012196429
NSN
5961-01-219-6429
JAN2N5912
SEMICONDUCTOR DEVICES,UNITIZED
NSN, MFG P/N
5961012196429
NSN
5961-01-219-6429
MFG
MILITARY SPECIFICATIONS PROMULGATED BY MILITARY DEPARTMENTS/AGENCIES UNDER AUTHORITY OF DEFENSE STANDARDIZATION MANUAL 4120 3-M
Description
(NON-CORE DATA) CHANNEL POLARITY AND CONTROL TYPE: N-CHANNEL JUNCTION TYPE
COMPONENT NAME AND QUANTITY: 2 TRANSISTOR
CURRENT RATING PER CHARACTERISTIC: 50.00 MILLIAMPERES MAXIMUM GATE CURRENT ALL TRANSISTOR
ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE: COLLECTOR
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: TO-78
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.370 INCHES MAXIMUM
OVERALL LENGTH: 0.185 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 0.5 WATTS MAXIMUM TOTAL POWER DISSIPATION ALL TRANSISTOR
SEMICONDUCTOR MATERIAL: SILICON ALL TRANSISTOR
TERMINAL CIRCLE DIAMETER: 0.200 INCHES NOMINAL
TERMINAL LENGTH: 0.500 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 8 UNINSULATED WIRE LEAD
TEST DATA DOCUMENT: 81413-231146 DRAWING
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: -25.0 MAXIMUM GATE TO SOURCE VOLTAGE ALL TRANSISTOR
Related Searches:
12-1154
TRANSISTOR
NSN, MFG P/N
5961012196552
NSN
5961-01-219-6552
MFG
MILLER AND VAN WINKLE SPRING CO
Description
TRANSISTOR
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ST1076
TRANSISTOR
NSN, MFG P/N
5961012196552
NSN
5961-01-219-6552
MFG
FREESCALE SEMICONDUCTOR INC.
Description
TRANSISTOR
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902168
TRANSISTOR
NSN, MFG P/N
5961012196554
NSN
5961-01-219-6554
MFG
BAE SYSTEMS INTEGRATED DEFENSE SOLUTIONS INC.
Description
CURRENT RATING PER CHARACTERISTIC: 5.00 AMPERES MAXIMUM COLLECTOR CURRENT, DC
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: JUNCTION CONTACT
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: TO-111
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 200.0 DEG CELSIUS AMBIENT AIR
MOUNTING FACILITY QUANTITY: 1
MOUNTING METHOD: THREADED STUD
NOMINAL THREAD SIZE: 0.190 INCHES
OVERALL LENGTH: 1.219 INCHES MAXIMUM
OVERALL WIDTH ACROSS FLATS: 0.438 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 50.0 WATTS MAXIMUM TOTAL DEVICE DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: NPN
TERMINAL TYPE AND QUANTITY: 3 TAB, SOLDER LUG AND 1 THREADED STUD
THREAD SERIES DESIGNATOR: UNF
TRANSFER RATIO: 150.0 MAXIMUM STATIC FORWARD CURRENT TRANSFER RATIO, COMMON-EMITTER
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 80.0 MAXIMUM COLLECTOR TO BASE VOLTAGE, DC AND 60.0 MAXIMUM
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DMS 85099B
TRANSISTOR
NSN, MFG P/N
5961012196554
NSN
5961-01-219-6554
MFG
DLA LAND AND MARITIME
Description
CURRENT RATING PER CHARACTERISTIC: 5.00 AMPERES MAXIMUM COLLECTOR CURRENT, DC
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: JUNCTION CONTACT
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: TO-111
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 200.0 DEG CELSIUS AMBIENT AIR
MOUNTING FACILITY QUANTITY: 1
MOUNTING METHOD: THREADED STUD
NOMINAL THREAD SIZE: 0.190 INCHES
OVERALL LENGTH: 1.219 INCHES MAXIMUM
OVERALL WIDTH ACROSS FLATS: 0.438 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 50.0 WATTS MAXIMUM TOTAL DEVICE DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: NPN
TERMINAL TYPE AND QUANTITY: 3 TAB, SOLDER LUG AND 1 THREADED STUD
THREAD SERIES DESIGNATOR: UNF
TRANSFER RATIO: 150.0 MAXIMUM STATIC FORWARD CURRENT TRANSFER RATIO, COMMON-EMITTER
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 80.0 MAXIMUM COLLECTOR TO BASE VOLTAGE, DC AND 60.0 MAXIMUM
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SP5731A
TRANSISTOR
NSN, MFG P/N
5961012196554
NSN
5961-01-219-6554
MFG
TEXAS INSTRUMENTS INCORPORATED DBA TEXAS INSTRUMENTS DIV SEMICONDUCTOR GROUP
Description
CURRENT RATING PER CHARACTERISTIC: 5.00 AMPERES MAXIMUM COLLECTOR CURRENT, DC
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: JUNCTION CONTACT
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: TO-111
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 200.0 DEG CELSIUS AMBIENT AIR
MOUNTING FACILITY QUANTITY: 1
MOUNTING METHOD: THREADED STUD
NOMINAL THREAD SIZE: 0.190 INCHES
OVERALL LENGTH: 1.219 INCHES MAXIMUM
OVERALL WIDTH ACROSS FLATS: 0.438 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 50.0 WATTS MAXIMUM TOTAL DEVICE DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: NPN
TERMINAL TYPE AND QUANTITY: 3 TAB, SOLDER LUG AND 1 THREADED STUD
THREAD SERIES DESIGNATOR: UNF
TRANSFER RATIO: 150.0 MAXIMUM STATIC FORWARD CURRENT TRANSFER RATIO, COMMON-EMITTER
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 80.0 MAXIMUM COLLECTOR TO BASE VOLTAGE, DC AND 60.0 MAXIMUM
