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5961-01-257-6764
20 Products
12-51
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961012576764
NSN
5961-01-257-6764
MFG
TEGAM INC.
Description
SEMICONDUCTOR DEVICE,DIODE
Related Searches:
12-293
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961012576765
NSN
5961-01-257-6765
MFG
TEGAM INC.
Description
SEMICONDUCTOR DEVICE,DIODE
Related Searches:
BYW31-150
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961012577036
NSN
5961-01-257-7036
MFG
PHILIPS SEMICONDUCTORS INC
Description
CURRENT RATING PER CHARACTERISTIC: 25.00 AMPERES MAXIMUM FORWARD CURRENT, DC AND 320.00 AMPERES MAXIMUM PEAK FORWARD SURGE CURRENT
INCLOSURE MATERIAL: METAL
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: DO-4
MOUNTING FACILITY QUANTITY: 1
MOUNTING METHOD: THREADED STUD
OVERALL LENGTH: 1.453 INCHES MAXIMUM
OVERALL WIDTH ACROSS FLATS: 0.430 INCHES NOMINAL
SPECIAL FEATURES: ULTRA FAST
TERMINAL TYPE AND QUANTITY: 1 TAB, SOLDER LUG AND 1 THREADED STUD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 150.0 MAXIMUM REPETITIVE PEAK REVERSE VOLTAGE
Related Searches:
1N4749
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961012577037
NSN
5961-01-257-7037
MFG
ELECTRONIC INDUSTRIES ASSOCIATION
Description
CURRENT RATING PER CHARACTERISTIC: 5.00 MICROAMPERES MAXIMUM REVERSE CURRENT, DC AND 38.00 MILLIAMPERES MAXIMUM MAXIMUM DC CURRENT IN REVERSE BREAKDOWN REGION
INCLOSURE MATERIAL: GLASS
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 200.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.100 INCHES MINIMUM AND 0.107 INCHES MAXIMUM
OVERALL LENGTH: 0.205 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 1.0 WATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPECIFICATION/STANDARD DATA: 80131-RELEASE5009 PROFESSIONAL/INDUSTRIAL ASSOCIATION STANDARD
TERMINAL LENGTH: 1.100 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 24.0 NOMINAL REGULATOR VOLTAGE, DC AND 1.2 MAXIMUM FORWARD VOLTAGE, DC
Related Searches:
IRF9522
TRANSISTOR
NSN, MFG P/N
5961012577504
NSN
5961-01-257-7504
MFG
INTERNATIONAL RECTIFIER CORP ORATION USE CAGE CODE 81483 FOR CATALOGING.
Description
CURRENT RATING PER CHARACTERISTIC: -20.00 AMPERES MAXIMUM OFF-STATE CURRENT, PEAK
INCLOSURE MATERIAL: PLASTIC
MOUNTING METHOD: TERMINAL
OVERALL LENGTH: 1.144 INCHES MAXIMUM
OVERALL WIDTH: 0.584 INCHES MINIMUM AND 0.594 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 40.0 WATTS MAXIMUM OFF-STATE POWER DISSIPATION
TERMINAL LENGTH: 0.530 INCHES MINIMUM AND 0.550 INCHES MAXIMUM
TERMINAL TYPE AND QUANTITY: 3 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: -100.0 MAXIMUM DRAIN TO SOURCE VOLTAGE
Related Searches:
2SJ77
TRANSISTOR
NSN, MFG P/N
5961012577505
NSN
5961-01-257-7505
MFG
HITACHI AMERICA LTD. DIV POWER SYSTEMS
Description
(NON-CORE DATA) CHANNEL POLARITY AND CONTROL TYPE: P-CHANNEL INSULATED GATE TYPE
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: FIELD EFFECT
MOUNTING METHOD: TERMINAL
OVERALL HEIGHT: 0.546 INCHES NOMINAL
OVERALL LENGTH: 0.705 INCHES NOMINAL
OVERALL WIDTH: 0.400 INCHES NOMINAL
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL LENGTH: 0.381 INCHES NOMINAL
TERMINAL TYPE AND QUANTITY: 3 PIN
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 1.5 MAXIMUM PEAK-POINT VOLTAGE AND 10.0 MAXIMUM DRAIN TO SOURCE VOLTAGE
Related Searches:
2SK214
TRANSISTOR
NSN, MFG P/N
5961012577506
NSN
5961-01-257-7506
MFG
HITACHI AMERICA LTD. DIV POWER SYSTEMS
Description
(NON-CORE DATA) CHANNEL POLARITY AND CONTROL TYPE: N-CHANNEL INSULATED GATE TYPE
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: FIELD EFFECT
MOUNTING METHOD: TERMINAL
OVERALL HEIGHT: 0.546 INCHES NOMINAL
OVERALL LENGTH: 0.705 INCHES NOMINAL
OVERALL WIDTH: 0.400 INCHES NOMINAL
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL LENGTH: 0.381 INCHES NOMINAL
TERMINAL TYPE AND QUANTITY: 3 PIN
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 1.5 MAXIMUM PEAK-POINT VOLTAGE AND 10.0 MAXIMUM DRAIN TO SOURCE VOLTAGE
Related Searches:
1N5614
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961012577507
NSN
5961-01-257-7507
MFG
ELECTRONIC INDUSTRIES ASSOCIATION
Description
CURRENT RATING PER CHARACTERISTIC: 1.00 AMPERES MAXIMUM FORWARD CURRENT, AVERAGE AND 50.00 AMPERES MAXIMUM PEAK FORWARD SURGE CURRENT
INCLOSURE MATERIAL: GLASS
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 200.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.110 INCHES MAXIMUM
OVERALL LENGTH: 2.750 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 38.0 WATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPECIFICATION/STANDARD DATA: 80131-RELEASE6218 PROFESSIONAL/INDUSTRIAL ASSOCIATION STANDARD
TERMINAL CIRCLE DIAMETER: 0.030 INCHES MINIMUM AND 0.032 INCHES MAXIMUM
TERMINAL LENGTH: 1.2925 INCHES MAXIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 200.0 NOMINAL WORKING PEAK REVERSE VOLTAGE AND 200.0 NOMINAL REPETITIVE PEAK REVERSE VOLTAGE AND 200.0 NOMINAL NONREPETITIVE PEAK REVERSE VOLTAGE
Related Searches:
5035825
RECTIFIER,SEMICONDUCTOR DEVICE
NSN, MFG P/N
5961012577941
NSN
5961-01-257-7941
5035825
RECTIFIER,SEMICONDUCTOR DEVICE
NSN, MFG P/N
5961012577941
NSN
5961-01-257-7941
MFG
SIGNALS WARFARE PROJECT MANAGER
Description
(NON-CORE DATA) TEST DATA DOCUMENT: 57958-5035825 DRAWING
ABSOLUTE MAXIMUM CURRENT RATING PER CHARACTERISTIC: 80.00 AMPERES AVERAGE FORWARD CURRENT AVERAGED OVER A FULL 60-HZ CYCLE AND 800.00 AMPERES PEAK FORWARD SURGE CURRENT
ABSOLUTE MAXIMUM VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 300.0 REPETITIVE PEAK REVERSE VOLTAGE
CIRCUIT CONNECTION STYLE DESIGNATOR: 7 BRIDGE 1 PHASE
MATERIAL: SILICON
MOUNTING METHOD: THREADED STUD
OPERATING TEMP RANGE: -46.0 TO 125.0 DEG CELSIUS
OVERALL HEIGHT: 1.140 INCHES MAXIMUM
OVERALL LENGTH: 2.300 INCHES MAXIMUM
OVERALL WIDTH: 1.800 INCHES MAXIMUM
TERMINAL TYPE AND QUANTITY: 4 THREADED HOLE
Related Searches:
M50100SB300
RECTIFIER,SEMICONDUCTOR DEVICE
NSN, MFG P/N
5961012577941
NSN
5961-01-257-7941
M50100SB300
RECTIFIER,SEMICONDUCTOR DEVICE
NSN, MFG P/N
5961012577941
NSN
5961-01-257-7941
MFG
SILICON POWER CUBE CORP AMPS ABUNDANT DIV
Description
(NON-CORE DATA) TEST DATA DOCUMENT: 57958-5035825 DRAWING
ABSOLUTE MAXIMUM CURRENT RATING PER CHARACTERISTIC: 80.00 AMPERES AVERAGE FORWARD CURRENT AVERAGED OVER A FULL 60-HZ CYCLE AND 800.00 AMPERES PEAK FORWARD SURGE CURRENT
ABSOLUTE MAXIMUM VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 300.0 REPETITIVE PEAK REVERSE VOLTAGE
CIRCUIT CONNECTION STYLE DESIGNATOR: 7 BRIDGE 1 PHASE
MATERIAL: SILICON
MOUNTING METHOD: THREADED STUD
OPERATING TEMP RANGE: -46.0 TO 125.0 DEG CELSIUS
OVERALL HEIGHT: 1.140 INCHES MAXIMUM
OVERALL LENGTH: 2.300 INCHES MAXIMUM
OVERALL WIDTH: 1.800 INCHES MAXIMUM
TERMINAL TYPE AND QUANTITY: 4 THREADED HOLE
Related Searches:
M50100SB400
RECTIFIER,SEMICONDUCTOR DEVICE
NSN, MFG P/N
5961012577941
NSN
5961-01-257-7941
M50100SB400
RECTIFIER,SEMICONDUCTOR DEVICE
NSN, MFG P/N
5961012577941
NSN
5961-01-257-7941
MFG
CRYDOM CORP
Description
(NON-CORE DATA) TEST DATA DOCUMENT: 57958-5035825 DRAWING
ABSOLUTE MAXIMUM CURRENT RATING PER CHARACTERISTIC: 80.00 AMPERES AVERAGE FORWARD CURRENT AVERAGED OVER A FULL 60-HZ CYCLE AND 800.00 AMPERES PEAK FORWARD SURGE CURRENT
ABSOLUTE MAXIMUM VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 300.0 REPETITIVE PEAK REVERSE VOLTAGE
CIRCUIT CONNECTION STYLE DESIGNATOR: 7 BRIDGE 1 PHASE
MATERIAL: SILICON
MOUNTING METHOD: THREADED STUD
OPERATING TEMP RANGE: -46.0 TO 125.0 DEG CELSIUS
OVERALL HEIGHT: 1.140 INCHES MAXIMUM
OVERALL LENGTH: 2.300 INCHES MAXIMUM
OVERALL WIDTH: 1.800 INCHES MAXIMUM
TERMINAL TYPE AND QUANTITY: 4 THREADED HOLE
Related Searches:
1373-0549
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961012577962
NSN
5961-01-257-7962
MFG
ESAB GROUP INC THE DBA ESAB WELDING PRODUCTS
Description
SEMICONDUCTOR DEVICE,DIODE
Related Searches:
1055-0416
HOLDER,SEMICONDUCTOR DEVICE
NSN, MFG P/N
5961012578186
NSN
5961-01-257-8186
1055-0416
HOLDER,SEMICONDUCTOR DEVICE
NSN, MFG P/N
5961012578186
NSN
5961-01-257-8186
MFG
LINAIR INC
Description
HOLDER,SEMICONDUCTOR DEVICE
Related Searches:
1666010
TRANSISTOR
NSN, MFG P/N
5961012578714
NSN
5961-01-257-8714
MFG
RAYTHEON COMPANY DBA RAYTHEON
Description
CURRENT RATING PER CHARACTERISTIC: 100.00 MICROAMPERES NOMINAL COLLECTOR CURRENT, INSTANTANEOUS
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.195 INCHES MAXIMUM
OVERALL LENGTH: 0.214 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 250.0 MILLIWATTS NOMINAL TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL CIRCLE DIAMETER: 0.019 INCHES MAXIMUM
TERMINAL LENGTH: 0.050 INCHES MINIMUM
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 50.0 MAXIMUM COLLECTOR TO EMITTER VOLTAGE/STATIC/BASE OPEN
Related Searches:
SM-C-801032
TRANSISTOR
NSN, MFG P/N
5961012578714
NSN
5961-01-257-8714
MFG
US ARMY COMMUNICATIONS & ELECTRONICS MATERIEL READINESS COMMAND LOGISTICS ENGINEERING DIR
Description
CURRENT RATING PER CHARACTERISTIC: 100.00 MICROAMPERES NOMINAL COLLECTOR CURRENT, INSTANTANEOUS
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.195 INCHES MAXIMUM
OVERALL LENGTH: 0.214 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 250.0 MILLIWATTS NOMINAL TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL CIRCLE DIAMETER: 0.019 INCHES MAXIMUM
TERMINAL LENGTH: 0.050 INCHES MINIMUM
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 50.0 MAXIMUM COLLECTOR TO EMITTER VOLTAGE/STATIC/BASE OPEN
Related Searches:
SRD449H
TRANSISTOR
NSN, MFG P/N
5961012578714
NSN
5961-01-257-8714
MFG
FREESCALE SEMICONDUCTOR INC.
Description
CURRENT RATING PER CHARACTERISTIC: 100.00 MICROAMPERES NOMINAL COLLECTOR CURRENT, INSTANTANEOUS
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.195 INCHES MAXIMUM
OVERALL LENGTH: 0.214 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 250.0 MILLIWATTS NOMINAL TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL CIRCLE DIAMETER: 0.019 INCHES MAXIMUM
TERMINAL LENGTH: 0.050 INCHES MINIMUM
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 50.0 MAXIMUM COLLECTOR TO EMITTER VOLTAGE/STATIC/BASE OPEN
Related Searches:
J176
TRANSISTOR
NSN, MFG P/N
5961012578715
NSN
5961-01-257-8715
MFG
AVNET ELECTRONICS MARKETING
Description
(NON-CORE DATA) CHANNEL POLARITY AND CONTROL TYPE: P-CHANNEL JUNCTION TYPE
III END ITEM IDENTIFICATION: C-11610P/URC-116, 10 CHANNEL HALF DUPLEX STORAGE BOARD ASSY
INTERNAL CONFIGURATION: FIELD EFFECT
SEMICONDUCTOR MATERIAL: SILICON
Related Searches:
261231000
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961012579546
NSN
5961-01-257-9546
MFG
GEC ALSTHOM INTL INC PTO SPARES & SERVICE DIV 045
Description
SEMICONDUCTOR DEVICE,DIODE
Related Searches:
123SAV53371-13
TRANSISTOR
NSN, MFG P/N
5961012579623
NSN
5961-01-257-9623
MFG
NORTHROP GRUMMAN SYSTEMS CORPORATION DIV NORTHROP GRUMMAN AEROSPACE SYSTEMS
Description
CURRENT RATING PER CHARACTERISTIC: 400.00 MILLIAMPERES MAXIMUM COLLECTOR CURRENT, DC
FEATURES PROVIDED: HERMETICALLY SEALED CASE
FUNCTION FOR WHICH DESIGNED: SWITCHING
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: JUNCTION CONTACT
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: TO-18
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 200.0 DEG CELSIUS JUNCTION
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.230 INCHES MAXIMUM
OVERALL LENGTH: 0.210 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 1.8 WATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: NPN
TERMINAL CIRCLE DIAMETER: 0.100 INCHES NOMINAL
TERMINAL LENGTH: 0.500 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 3 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 75.0 MAXIMUM COLLECTOR TO BASE VOLTAGE/STATIC/EMITTER OPEN AND 50.0 MAXIMUM COLLECTOR TO EMITTER VOLTAGE/STATIC/BASE OPEN AND 6.0 MAXIMUM EMITTE
Related Searches:
853296-1
SEMICONDUCTOR DEVICES,UNITIZED
NSN, MFG P/N
5961012579626
NSN
5961-01-257-9626
853296-1
SEMICONDUCTOR DEVICES,UNITIZED
NSN, MFG P/N
5961012579626
NSN
5961-01-257-9626
MFG
TELEDYNE TECHNOLOGIES INC DBA TELEDYNE CONTROLS DIV TELEDYNE CONTROLS
Description
COMPONENT NAME AND QUANTITY: 6 SEMICONDUCTOR DEVICE DIODE
CURRENT RATING PER CHARACTERISTIC: 100.00 MILLIAMPERES MAXIMUM AVERAGE FORWARD CURRENT AVERAGED OVER A FULL 60-HZ CYCLE ALL SEMICONDUCTOR DEVICE DIODE
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: GLASS
MOUNTING METHOD: TERMINAL
OVERALL HEIGHT: 0.380 INCHES MAXIMUM
OVERALL LENGTH: 0.750 INCHES MAXIMUM
OVERALL WIDTH: 0.380 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON ALL SEMICONDUCTOR DEVICE DIODE
SPECIAL FEATURES: ALL SEMICONDUCTOR DEVICE DIODE JUNCTION PATTERN ARRANGEMENT: PN
TERMINAL LENGTH: 1.000 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 12 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 1.0 MAXIMUM FORWARD VOLTAGE, DC ALL SEMICONDUCTOR DEVICE DIODE
