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5961-01-355-7211
20 Products
656365-001
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961013557211
NSN
5961-01-355-7211
656365-001
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961013557211
NSN
5961-01-355-7211
MFG
RAYTHEON COMPANY
Description
CRITICALITY CODE JUSTIFICATION: FEAT
INCLOSURE MATERIAL: CERAMIC
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 175.0 DEG CELSIUS JUNCTION
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.200 INCHES MAXIMUM
OVERALL LENGTH: 0.150 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: NUCLEAR HARDNESS CRITICAL ITEM; JUNCTION PATTERN ARRANGEMENT: PIN
TERMINAL LENGTH: 0.975 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 100.0 MAXIMUM REVERSE VOLTAGE, INSTANTANEOUS
Related Searches:
NH656365-001
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961013557211
NSN
5961-01-355-7211
NH656365-001
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961013557211
NSN
5961-01-355-7211
MFG
DLA LAND AND MARITIME
Description
CRITICALITY CODE JUSTIFICATION: FEAT
INCLOSURE MATERIAL: CERAMIC
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 175.0 DEG CELSIUS JUNCTION
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.200 INCHES MAXIMUM
OVERALL LENGTH: 0.150 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: NUCLEAR HARDNESS CRITICAL ITEM; JUNCTION PATTERN ARRANGEMENT: PIN
TERMINAL LENGTH: 0.975 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 100.0 MAXIMUM REVERSE VOLTAGE, INSTANTANEOUS
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UM9767
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961013557211
NSN
5961-01-355-7211
MFG
MICRO USPD INC
Description
CRITICALITY CODE JUSTIFICATION: FEAT
INCLOSURE MATERIAL: CERAMIC
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 175.0 DEG CELSIUS JUNCTION
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.200 INCHES MAXIMUM
OVERALL LENGTH: 0.150 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: NUCLEAR HARDNESS CRITICAL ITEM; JUNCTION PATTERN ARRANGEMENT: PIN
TERMINAL LENGTH: 0.975 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 100.0 MAXIMUM REVERSE VOLTAGE, INSTANTANEOUS
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86A0095-2
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961013557212
NSN
5961-01-355-7212
MFG
SIGNAL TECHNOLOGY CORPORATION
Description
SEMICONDUCTOR DEVICE,DIODE
Related Searches:
RZ163
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961013557212
NSN
5961-01-355-7212
MFG
VOLTAGE MULTIPLIERS INC. DBA V M I
Description
SEMICONDUCTOR DEVICE,DIODE
Related Searches:
11022044
RECTIFIER,SEMICONDUCTOR DEVICE,UNITIZED
NSN, MFG P/N
5961013557302
NSN
5961-01-355-7302
11022044
RECTIFIER,SEMICONDUCTOR DEVICE,UNITIZED
NSN, MFG P/N
5961013557302
NSN
5961-01-355-7302
MFG
US ARMY ARMAMENT RESEARCH DEVELOPEMENT ENGINEERING CENTER
Description
MATERIAL: SILICON
MOUNTING METHOD: UNTHREADED HOLE AND SLOT
OVERALL HEIGHT: 0.965 INCHES MINIMUM AND 1.060 INCHES MAXIMUM
OVERALL LENGTH: 2.485 INCHES MINIMUM AND 2.515 INCHES MAXIMUM
OVERALL WIDTH: 0.900 INCHES MINIMUM AND 1.070 INCHES MAXIMUM
TERMINAL TYPE AND QUANTITY: 6 QUICK DISCONNECT, MALE
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P101W
RECTIFIER,SEMICONDUCTOR DEVICE,UNITIZED
NSN, MFG P/N
5961013557302
NSN
5961-01-355-7302
P101W
RECTIFIER,SEMICONDUCTOR DEVICE,UNITIZED
NSN, MFG P/N
5961013557302
NSN
5961-01-355-7302
MFG
INTERNATIONAL RECTIFIER CORP ORATION USE CAGE CODE 81483 FOR CATALOGING.
Description
MATERIAL: SILICON
MOUNTING METHOD: UNTHREADED HOLE AND SLOT
OVERALL HEIGHT: 0.965 INCHES MINIMUM AND 1.060 INCHES MAXIMUM
OVERALL LENGTH: 2.485 INCHES MINIMUM AND 2.515 INCHES MAXIMUM
OVERALL WIDTH: 0.900 INCHES MINIMUM AND 1.070 INCHES MAXIMUM
TERMINAL TYPE AND QUANTITY: 6 QUICK DISCONNECT, MALE
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T511F
RECTIFIER,SEMICONDUCTOR DEVICE,UNITIZED
NSN, MFG P/N
5961013557302
NSN
5961-01-355-7302
T511F
RECTIFIER,SEMICONDUCTOR DEVICE,UNITIZED
NSN, MFG P/N
5961013557302
NSN
5961-01-355-7302
MFG
CRYDOM CORP
Description
MATERIAL: SILICON
MOUNTING METHOD: UNTHREADED HOLE AND SLOT
OVERALL HEIGHT: 0.965 INCHES MINIMUM AND 1.060 INCHES MAXIMUM
OVERALL LENGTH: 2.485 INCHES MINIMUM AND 2.515 INCHES MAXIMUM
OVERALL WIDTH: 0.900 INCHES MINIMUM AND 1.070 INCHES MAXIMUM
TERMINAL TYPE AND QUANTITY: 6 QUICK DISCONNECT, MALE
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150-027495-001
SEMICONDUCTOR DEVICE ASSEMBLY
NSN, MFG P/N
5961013557313
NSN
5961-01-355-7313
150-027495-001
SEMICONDUCTOR DEVICE ASSEMBLY
NSN, MFG P/N
5961013557313
NSN
5961-01-355-7313
MFG
NORTHROP GRUMMAN SYSTEMS CORPORATION DIV MULTIPLE
Description
SEMICONDUCTOR DEVICE ASSEMBLY
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12934660
SEMICONDUCTOR DEVICE ASSEMBLY
NSN, MFG P/N
5961013557314
NSN
5961-01-355-7314
12934660
SEMICONDUCTOR DEVICE ASSEMBLY
NSN, MFG P/N
5961013557314
NSN
5961-01-355-7314
MFG
U S ARMY ARMAMENT RESEARCH & DEVELOPMENT COMMAND
Description
CRITICALITY CODE JUSTIFICATION: FEAT
MAJOR COMPONENTS: DIODE 2,TERMINAL 2
SPECIAL FEATURES: WEAPON SYSTEM ESSENTIAL
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BP16474
SEMICONDUCTOR DEVICE ASSEMBLY
NSN, MFG P/N
5961013557314
NSN
5961-01-355-7314
BP16474
SEMICONDUCTOR DEVICE ASSEMBLY
NSN, MFG P/N
5961013557314
NSN
5961-01-355-7314
MFG
BURKE PRODUCTS INC.
Description
CRITICALITY CODE JUSTIFICATION: FEAT
MAJOR COMPONENTS: DIODE 2,TERMINAL 2
SPECIAL FEATURES: WEAPON SYSTEM ESSENTIAL
Related Searches:
409879
TRANSISTOR
NSN, MFG P/N
5961013557480
NSN
5961-01-355-7480
MFG
HOBART BROS CO
Description
TRANSISTOR
Related Searches:
409880
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961013557481
NSN
5961-01-355-7481
MFG
HOBART BROS CO
Description
SEMICONDUCTOR DEVICE,DIODE
Related Searches:
645733-1
TRANSISTOR
NSN, MFG P/N
5961013557543
NSN
5961-01-355-7543
MFG
RAYTHEON COMPANY DBA RAYTHEON
Description
(NON-CORE DATA) CHANNEL POLARITY AND CONTROL TYPE: N-CHANNEL INSULATED GATE TYPE
CURRENT RATING PER CHARACTERISTIC: 0.20 AMPERES MAXIMUM DRAIN CURRENT AND 100.00 MILLIAMPERES MAXIMUM GATE CURRENT
ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE: DRAIN
FEATURES PROVIDED: BURN IN AND ELECTROSTATIC SENSITIVE AND HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: FIELD EFFECT
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 150.0 DEG CELSIUS JUNCTION
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.209 INCHES MINIMUM AND 0.230 INCHES MAXIMUM
OVERALL LENGTH: 0.115 INCHES MINIMUM AND 0.150 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 315.0 MILLIWATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL CIRCLE DIAMETER: 0.100 INCHES NOMINAL
TERMINAL LENGTH: 0.500 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 3 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 60.0 MAXIMUM DRAIN TO SOURCE VOLTAGE AND 60.0 MAXIMUM DRA
Related Searches:
V12304
TRANSISTOR
NSN, MFG P/N
5961013557543
NSN
5961-01-355-7543
MFG
SILICONIX INCORPORATED D IV SILICONIX
Description
(NON-CORE DATA) CHANNEL POLARITY AND CONTROL TYPE: N-CHANNEL INSULATED GATE TYPE
CURRENT RATING PER CHARACTERISTIC: 0.20 AMPERES MAXIMUM DRAIN CURRENT AND 100.00 MILLIAMPERES MAXIMUM GATE CURRENT
ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE: DRAIN
FEATURES PROVIDED: BURN IN AND ELECTROSTATIC SENSITIVE AND HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: FIELD EFFECT
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 150.0 DEG CELSIUS JUNCTION
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.209 INCHES MINIMUM AND 0.230 INCHES MAXIMUM
OVERALL LENGTH: 0.115 INCHES MINIMUM AND 0.150 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 315.0 MILLIWATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL CIRCLE DIAMETER: 0.100 INCHES NOMINAL
TERMINAL LENGTH: 0.500 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 3 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 60.0 MAXIMUM DRAIN TO SOURCE VOLTAGE AND 60.0 MAXIMUM DRA
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1N5237B
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961013557544
NSN
5961-01-355-7544
MFG
ITT SEMICONDUCTORS A DIVISION OF INTERNATIONAL TELEPHONE AND TELEGRAPH CORP
Description
CURRENT RATING PER CHARACTERISTIC: 1.00 MILLIAMPERES NOMINAL VOLTAGE REGULATOR DIODE CURRENT
FEATURES PROVIDED: BURN IN AND HERMETICALLY SEALED CASE
FUNCTION FOR WHICH DESIGNED: ZENER DIODE
INCLOSURE MATERIAL: GLASS
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 200.0 DEG CELSIUS JUNCTION
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.070 INCHES NOMINAL
OVERALL LENGTH: 0.160 INCHES NOMINAL
POWER RATING PER CHARACTERISTIC: 500.0 MILLIWATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL LENGTH: 1.000 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 8.2 NOMINAL NOMINAL REGULATOR VOLTAGE
VOLTAGE TOLERANCE IN PERCENT: -5.0 TO 5.0
Related Searches:
615910-3
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961013557544
NSN
5961-01-355-7544
MFG
RAYTHEON COMPANY DBA RAYTHEON
Description
CURRENT RATING PER CHARACTERISTIC: 1.00 MILLIAMPERES NOMINAL VOLTAGE REGULATOR DIODE CURRENT
FEATURES PROVIDED: BURN IN AND HERMETICALLY SEALED CASE
FUNCTION FOR WHICH DESIGNED: ZENER DIODE
INCLOSURE MATERIAL: GLASS
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 200.0 DEG CELSIUS JUNCTION
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.070 INCHES NOMINAL
OVERALL LENGTH: 0.160 INCHES NOMINAL
POWER RATING PER CHARACTERISTIC: 500.0 MILLIWATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL LENGTH: 1.000 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 8.2 NOMINAL NOMINAL REGULATOR VOLTAGE
VOLTAGE TOLERANCE IN PERCENT: -5.0 TO 5.0
Related Searches:
JANTXV1N4622-1
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961013557545
NSN
5961-01-355-7545
JANTXV1N4622-1
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961013557545
NSN
5961-01-355-7545
MFG
MILITARY SPECIFICATIONS PROMULGATED BY MILITARY DEPARTMENTS/AGENCIES UNDER AUTHORITY OF DEFENSE STANDARDIZATION MANUAL 4120 3-M
Description
CURRENT RATING PER CHARACTERISTIC: 80.00 MILLIAMPERES NOMINAL VOLTAGE REGULATOR DIODE CURRENT
DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: JANTXV1N4622-1
FEATURES PROVIDED: QUALITY ASSURANCE LEVEL TXV
FUNCTION FOR WHICH DESIGNED: VOLTAGE REGULATOR
INCLOSURE MATERIAL: GLASS
MANUFACTURERS CODE: 81349
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 200.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
NON-DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: MIL-PRF-19500/435
OVERALL DIAMETER: 0.055 INCHES MINIMUM AND 0.090 INCHES MAXIMUM
OVERALL LENGTH: 0.120 INCHES MINIMUM AND 0.200 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 500.0 MILLIWATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPEC/STD CONTROLLING DATA:
SPECIFICATION/STANDARD DATA: 81349-MIL-S-19500/435 GOVERNMENT SPECIFICATION
TERMINAL LENGTH: 1.000 INCHES MINIMUM AND 1.500 INCHES MAXIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
TEST DATA DOCUMENT: 81349-MIL-S-19500 SPECIFICATION
Related Searches:
6155137
SEMICONDUCTOR DEVICES,UNITIZED
NSN, MFG P/N
5961013557547
NSN
5961-01-355-7547
6155137
SEMICONDUCTOR DEVICES,UNITIZED
NSN, MFG P/N
5961013557547
NSN
5961-01-355-7547
MFG
NAVAL SEA SYSTEMS COMMAND
Description
COMPONENT NAME AND QUANTITY: 2 TRANSISTOR
CURRENT RATING PER CHARACTERISTIC: 50.00 MILLIAMPERES MAXIMUM COLLECTOR CURRENT, DC ALL TRANSISTOR
FEATURES PROVIDED: BURN IN
INCLOSURE MATERIAL: METAL
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 175.0 DEG CELSIUS JUNCTION
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.340 INCHES MINIMUM AND 0.370 INCHES MAXIMUM
OVERALL LENGTH: 0.165 INCHES MINIMUM AND 0.185 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 200.0 MILLIWATTS MAXIMUM TOTAL POWER DISSIPATION ALL TRANSISTOR
SEMICONDUCTOR MATERIAL: SILICON ALL TRANSISTOR
SPECIAL FEATURES: ALL TRANSISTOR JUNCTION PATTERN ARRANGEMENT: NPN
TERMINAL CIRCLE DIAMETER: 0.200 INCHES NOMINAL
TERMINAL LENGTH: 0.500 INCHES MINIMUM AND 0.560 INCHES MAXIMUM
TERMINAL TYPE AND QUANTITY: 8 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 10.0 MAXIMUM COLLECTOR TO BASE VOLTAGE, DC AND 5.0 MAXIMUM EMITTER TO BASE, RMS ALL TRANSISTOR
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SL362-97
SEMICONDUCTOR DEVICES,UNITIZED
NSN, MFG P/N
5961013557547
NSN
5961-01-355-7547
SL362-97
SEMICONDUCTOR DEVICES,UNITIZED
NSN, MFG P/N
5961013557547
NSN
5961-01-355-7547
MFG
MITEL SEMICONDUCTOR AMERICANS INC
Description
COMPONENT NAME AND QUANTITY: 2 TRANSISTOR
CURRENT RATING PER CHARACTERISTIC: 50.00 MILLIAMPERES MAXIMUM COLLECTOR CURRENT, DC ALL TRANSISTOR
FEATURES PROVIDED: BURN IN
INCLOSURE MATERIAL: METAL
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 175.0 DEG CELSIUS JUNCTION
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.340 INCHES MINIMUM AND 0.370 INCHES MAXIMUM
OVERALL LENGTH: 0.165 INCHES MINIMUM AND 0.185 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 200.0 MILLIWATTS MAXIMUM TOTAL POWER DISSIPATION ALL TRANSISTOR
SEMICONDUCTOR MATERIAL: SILICON ALL TRANSISTOR
SPECIAL FEATURES: ALL TRANSISTOR JUNCTION PATTERN ARRANGEMENT: NPN
TERMINAL CIRCLE DIAMETER: 0.200 INCHES NOMINAL
TERMINAL LENGTH: 0.500 INCHES MINIMUM AND 0.560 INCHES MAXIMUM
TERMINAL TYPE AND QUANTITY: 8 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 10.0 MAXIMUM COLLECTOR TO BASE VOLTAGE, DC AND 5.0 MAXIMUM EMITTER TO BASE, RMS ALL TRANSISTOR
