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5961-01-291-6766

20 Products

BZX79-C30

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961012916766

NSN

5961-01-291-6766

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BZX79-C30

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961012916766

NSN

5961-01-291-6766

MFG

PHILIPS SEMICONDUCTORS INC

J111

TRANSISTOR

NSN, MFG P/N

5961012916901

NSN

5961-01-291-6901

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J111

TRANSISTOR

NSN, MFG P/N

5961012916901

NSN

5961-01-291-6901

MFG

SILICONIX INCORPORATED D IV SILICONIX

Description

INCLOSURE MATERIAL: PLASTIC
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 135.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
OVERALL HEIGHT: 0.670 INCHES MINIMUM
OVERALL LENGTH: 0.190 INCHES NOMINAL
OVERALL WIDTH: 0.145 INCHES NOMINAL
TERMINAL TYPE AND QUANTITY: 3 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 35.0 MINIMUM FORWARD GATE TO SOURCE BREAKDOWN VOLTAGE

MA49121

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961012916906

NSN

5961-01-291-6906

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MA49121

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961012916906

NSN

5961-01-291-6906

MFG

M/A-COM INC. DBA TYCO ELECTRONIC WIRELESS SYSTEM

Description

OVERALL DIAMETER: 0.119 INCHES MINIMUM
OVERALL LENGTH: 0.188 INCHES MINIMUM

30CTQ045

RECTIFIER,SEMICONDUCTOR DEVICE

NSN, MFG P/N

5961012916949

NSN

5961-01-291-6949

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30CTQ045

RECTIFIER,SEMICONDUCTOR DEVICE

NSN, MFG P/N

5961012916949

NSN

5961-01-291-6949

MFG

INTERNATIONAL RECTIFIER CORP ORATION USE CAGE CODE 81483 FOR CATALOGING.

Description

ABSOLUTE MAXIMUM CURRENT RATING PER CHARACTERISTIC: 30.00 AMPERES AVERAGE FORWARD CURRENT AVERAGED OVER A FULL 60-HZ CYCLE
ABSOLUTE MAXIMUM VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 30.0 WORKING PEAK REVERSE VOLTAGE
OPERATING TEMP RANGE: -40.0 TO 150.0 DEG CELSIUS
OVERALL LENGTH: 1.134 INCHES NOMINAL
OVERALL WIDTH: 0.415 INCHES MAXIMUM
TERMINAL TYPE AND QUANTITY: 3 WIRE LEAD

G337680-1

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961012917734

NSN

5961-01-291-7734

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G337680-1

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961012917734

NSN

5961-01-291-7734

MFG

RAYTHEON COMPANY DBA RAYTHEON

Description

CRITICALITY CODE JUSTIFICATION: FEAT
CURRENT RATING PER CHARACTERISTIC: 3.00 AMPERES MAXIMUM AVERAGE FORWARD CURRENT AVERAGED OVER A FULL 60-HZ CYCLE AND 15.00 AMPERES MAXIMUM FORWARD CURRENT, MAXIMUM PEAK TOTAL VALUE AND 75.00 AMPERES MAXIMUM PEAK FORWARD SURGE CURRENT
FEATURES PROVIDED: HERMETICALLY SEALED CASE
III END ITEM IDENTIFICATION: FORRESTAL CLASS CV, SPRUANCE CLASS DD (963), OLIVER PERRY CLASS FFG, RADAR, SERIES AN/SPS-49 (V), ARLEIGH BURKE CLASS DDG, LOS ANGELES CLASS SSN (688) STURGEON CLASS SSN (637), TICONDEROGA CLASS CG (47), NIMITZ CLASS CVN
INCLOSURE MATERIAL: GLASS
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 150.0 DEG CELSIUS JUNCTION
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.250 INCHES MAXIMUM
OVERALL LENGTH: 0.300 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: WEAPON SYSTEM ESSENTIAL
TERMINAL LENGTH: 0.900 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 600.0 MAXIM

G392850-1

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961012917734

NSN

5961-01-291-7734

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G392850-1

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961012917734

NSN

5961-01-291-7734

MFG

RAYTHEON TECHNICAL SERVICES COMPANY LLC DBA RAYTHEON

Description

CRITICALITY CODE JUSTIFICATION: FEAT
CURRENT RATING PER CHARACTERISTIC: 3.00 AMPERES MAXIMUM AVERAGE FORWARD CURRENT AVERAGED OVER A FULL 60-HZ CYCLE AND 15.00 AMPERES MAXIMUM FORWARD CURRENT, MAXIMUM PEAK TOTAL VALUE AND 75.00 AMPERES MAXIMUM PEAK FORWARD SURGE CURRENT
FEATURES PROVIDED: HERMETICALLY SEALED CASE
III END ITEM IDENTIFICATION: FORRESTAL CLASS CV, SPRUANCE CLASS DD (963), OLIVER PERRY CLASS FFG, RADAR, SERIES AN/SPS-49 (V), ARLEIGH BURKE CLASS DDG, LOS ANGELES CLASS SSN (688) STURGEON CLASS SSN (637), TICONDEROGA CLASS CG (47), NIMITZ CLASS CVN
INCLOSURE MATERIAL: GLASS
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 150.0 DEG CELSIUS JUNCTION
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.250 INCHES MAXIMUM
OVERALL LENGTH: 0.300 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: WEAPON SYSTEM ESSENTIAL
TERMINAL LENGTH: 0.900 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 600.0 MAXIM

S56895

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961012917734

NSN

5961-01-291-7734

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S56895

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961012917734

NSN

5961-01-291-7734

MFG

SEMTECH CORPORATION

Description

CRITICALITY CODE JUSTIFICATION: FEAT
CURRENT RATING PER CHARACTERISTIC: 3.00 AMPERES MAXIMUM AVERAGE FORWARD CURRENT AVERAGED OVER A FULL 60-HZ CYCLE AND 15.00 AMPERES MAXIMUM FORWARD CURRENT, MAXIMUM PEAK TOTAL VALUE AND 75.00 AMPERES MAXIMUM PEAK FORWARD SURGE CURRENT
FEATURES PROVIDED: HERMETICALLY SEALED CASE
III END ITEM IDENTIFICATION: FORRESTAL CLASS CV, SPRUANCE CLASS DD (963), OLIVER PERRY CLASS FFG, RADAR, SERIES AN/SPS-49 (V), ARLEIGH BURKE CLASS DDG, LOS ANGELES CLASS SSN (688) STURGEON CLASS SSN (637), TICONDEROGA CLASS CG (47), NIMITZ CLASS CVN
INCLOSURE MATERIAL: GLASS
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 150.0 DEG CELSIUS JUNCTION
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.250 INCHES MAXIMUM
OVERALL LENGTH: 0.300 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: WEAPON SYSTEM ESSENTIAL
TERMINAL LENGTH: 0.900 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 600.0 MAXIM

SDX-244

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961012917734

NSN

5961-01-291-7734

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SDX-244

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961012917734

NSN

5961-01-291-7734

MFG

SOLID STATE DEVICES INC.

Description

CRITICALITY CODE JUSTIFICATION: FEAT
CURRENT RATING PER CHARACTERISTIC: 3.00 AMPERES MAXIMUM AVERAGE FORWARD CURRENT AVERAGED OVER A FULL 60-HZ CYCLE AND 15.00 AMPERES MAXIMUM FORWARD CURRENT, MAXIMUM PEAK TOTAL VALUE AND 75.00 AMPERES MAXIMUM PEAK FORWARD SURGE CURRENT
FEATURES PROVIDED: HERMETICALLY SEALED CASE
III END ITEM IDENTIFICATION: FORRESTAL CLASS CV, SPRUANCE CLASS DD (963), OLIVER PERRY CLASS FFG, RADAR, SERIES AN/SPS-49 (V), ARLEIGH BURKE CLASS DDG, LOS ANGELES CLASS SSN (688) STURGEON CLASS SSN (637), TICONDEROGA CLASS CG (47), NIMITZ CLASS CVN
INCLOSURE MATERIAL: GLASS
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 150.0 DEG CELSIUS JUNCTION
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.250 INCHES MAXIMUM
OVERALL LENGTH: 0.300 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: WEAPON SYSTEM ESSENTIAL
TERMINAL LENGTH: 0.900 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 600.0 MAXIM

SEN-R-432

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961012917734

NSN

5961-01-291-7734

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SEN-R-432

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961012917734

NSN

5961-01-291-7734

MFG

RSM ELECTRON POWER INC . DBA RSM SENSITRON SEMICONDUCTOR

Description

CRITICALITY CODE JUSTIFICATION: FEAT
CURRENT RATING PER CHARACTERISTIC: 3.00 AMPERES MAXIMUM AVERAGE FORWARD CURRENT AVERAGED OVER A FULL 60-HZ CYCLE AND 15.00 AMPERES MAXIMUM FORWARD CURRENT, MAXIMUM PEAK TOTAL VALUE AND 75.00 AMPERES MAXIMUM PEAK FORWARD SURGE CURRENT
FEATURES PROVIDED: HERMETICALLY SEALED CASE
III END ITEM IDENTIFICATION: FORRESTAL CLASS CV, SPRUANCE CLASS DD (963), OLIVER PERRY CLASS FFG, RADAR, SERIES AN/SPS-49 (V), ARLEIGH BURKE CLASS DDG, LOS ANGELES CLASS SSN (688) STURGEON CLASS SSN (637), TICONDEROGA CLASS CG (47), NIMITZ CLASS CVN
INCLOSURE MATERIAL: GLASS
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 150.0 DEG CELSIUS JUNCTION
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.250 INCHES MAXIMUM
OVERALL LENGTH: 0.300 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: WEAPON SYSTEM ESSENTIAL
TERMINAL LENGTH: 0.900 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 600.0 MAXIM

1906-0208

SEMICONDUCTOR DEVICE SET

NSN, MFG P/N

5961012917736

NSN

5961-01-291-7736

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1906-0208

SEMICONDUCTOR DEVICE SET

NSN, MFG P/N

5961012917736

NSN

5961-01-291-7736

MFG

AVAGO TECHNOLOGIES U.S. INC. DIV AVAGO TECHNOLOGIES

Description

COMPONENT FUNCTION RELATIONSHIP: MATCHED
CURRENT RATING PER CHARACTERISTIC: 1.00 MILLIAMPERES MAXIMUM AVERAGE FORWARD CURRENT AVERAGED OVER A FULL 60-HZ CYCLE
III END ITEM IDENTIFICATION: VIRGINIA CLASS CGN (41); FORRESTAL CLASS CV; OLIVER PERRY CLASS FFG; SPRUANCE CLASS DD (963); STURGEON CLASS SSN (637); ARLEIGH BURKE CLASS DDG; WASP CLASS LHD; AUSTIN SHIP CLASS LPD-4 AMPHIBIOUS TRASNPORT DOCKS
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 0.003 MAXIMUM REVERSE VOLTAGE, PEAK

QSCH-3984

SEMICONDUCTOR DEVICE SET

NSN, MFG P/N

5961012917736

NSN

5961-01-291-7736

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QSCH-3984

SEMICONDUCTOR DEVICE SET

NSN, MFG P/N

5961012917736

NSN

5961-01-291-7736

MFG

HEWLETT PACKARD CO

Description

COMPONENT FUNCTION RELATIONSHIP: MATCHED
CURRENT RATING PER CHARACTERISTIC: 1.00 MILLIAMPERES MAXIMUM AVERAGE FORWARD CURRENT AVERAGED OVER A FULL 60-HZ CYCLE
III END ITEM IDENTIFICATION: VIRGINIA CLASS CGN (41); FORRESTAL CLASS CV; OLIVER PERRY CLASS FFG; SPRUANCE CLASS DD (963); STURGEON CLASS SSN (637); ARLEIGH BURKE CLASS DDG; WASP CLASS LHD; AUSTIN SHIP CLASS LPD-4 AMPHIBIOUS TRASNPORT DOCKS
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 0.003 MAXIMUM REVERSE VOLTAGE, PEAK

60514170-1

SEMICONDUCTOR DEVICES,UNITIZED

NSN, MFG P/N

5961012919162

NSN

5961-01-291-9162

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60514170-1

SEMICONDUCTOR DEVICES,UNITIZED

NSN, MFG P/N

5961012919162

NSN

5961-01-291-9162

MFG

NORTHROP GRUMMAN GUIDANCE AND ELECTRONICS COMPANY INC. DIV LASER SYSTEMS

Description

(NON-CORE DATA) CHANNEL POLARITY AND CONTROL TYPE: N-CHANNEL JUNCTION TYPE
COMPONENT NAME AND QUANTITY: 4 TRANSISTOR
CURRENT RATING PER CHARACTERISTIC: 2.00 AMPERES MAXIMUM DRAIN CUTOFF CURRENT ALL TRANSISTOR
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: CERAMIC
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 150.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
OVERALL HEIGHT: 0.150 INCHES MAXIMUM
OVERALL LENGTH: 0.786 INCHES MAXIMUM
OVERALL WIDTH: 0.310 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 2.0 WATTS MAXIMUM TOTAL POWER DISSIPATION ALL TRANSISTOR
SEMICONDUCTOR MATERIAL: SILICON ALL TRANSISTOR
TERMINAL LENGTH: 0.210 INCHES MAXIMUM
TERMINAL TYPE AND QUANTITY: 14 PIN
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 60.0 MAXIMUM DRAIN TO GATE VOLTAGE AND 60.0 MAXIMUM DRAIN TO SOURCE VOLTAGE ALL TRANSISTOR

SNF1045

SEMICONDUCTOR DEVICES,UNITIZED

NSN, MFG P/N

5961012919162

NSN

5961-01-291-9162

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SNF1045

SEMICONDUCTOR DEVICES,UNITIZED

NSN, MFG P/N

5961012919162

NSN

5961-01-291-9162

MFG

SILICON TRANSISTOR CORP SUB OF BBF INC

Description

(NON-CORE DATA) CHANNEL POLARITY AND CONTROL TYPE: N-CHANNEL JUNCTION TYPE
COMPONENT NAME AND QUANTITY: 4 TRANSISTOR
CURRENT RATING PER CHARACTERISTIC: 2.00 AMPERES MAXIMUM DRAIN CUTOFF CURRENT ALL TRANSISTOR
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: CERAMIC
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 150.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
OVERALL HEIGHT: 0.150 INCHES MAXIMUM
OVERALL LENGTH: 0.786 INCHES MAXIMUM
OVERALL WIDTH: 0.310 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 2.0 WATTS MAXIMUM TOTAL POWER DISSIPATION ALL TRANSISTOR
SEMICONDUCTOR MATERIAL: SILICON ALL TRANSISTOR
TERMINAL LENGTH: 0.210 INCHES MAXIMUM
TERMINAL TYPE AND QUANTITY: 14 PIN
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 60.0 MAXIMUM DRAIN TO GATE VOLTAGE AND 60.0 MAXIMUM DRAIN TO SOURCE VOLTAGE ALL TRANSISTOR

VQ5025

SEMICONDUCTOR DEVICES,UNITIZED

NSN, MFG P/N

5961012919162

NSN

5961-01-291-9162

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VQ5025

SEMICONDUCTOR DEVICES,UNITIZED

NSN, MFG P/N

5961012919162

NSN

5961-01-291-9162

MFG

SILICONIX INCORPORATED D IV SILICONIX

Description

(NON-CORE DATA) CHANNEL POLARITY AND CONTROL TYPE: N-CHANNEL JUNCTION TYPE
COMPONENT NAME AND QUANTITY: 4 TRANSISTOR
CURRENT RATING PER CHARACTERISTIC: 2.00 AMPERES MAXIMUM DRAIN CUTOFF CURRENT ALL TRANSISTOR
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: CERAMIC
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 150.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
OVERALL HEIGHT: 0.150 INCHES MAXIMUM
OVERALL LENGTH: 0.786 INCHES MAXIMUM
OVERALL WIDTH: 0.310 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 2.0 WATTS MAXIMUM TOTAL POWER DISSIPATION ALL TRANSISTOR
SEMICONDUCTOR MATERIAL: SILICON ALL TRANSISTOR
TERMINAL LENGTH: 0.210 INCHES MAXIMUM
TERMINAL TYPE AND QUANTITY: 14 PIN
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 60.0 MAXIMUM DRAIN TO GATE VOLTAGE AND 60.0 MAXIMUM DRAIN TO SOURCE VOLTAGE ALL TRANSISTOR

70902-41700-101

TRANSISTOR

NSN, MFG P/N

5961012919420

NSN

5961-01-291-9420

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70902-41700-101

TRANSISTOR

NSN, MFG P/N

5961012919420

NSN

5961-01-291-9420

MFG

SIKORSKY AIRCRAFT CORPORATION

Description

CURRENT RATING PER CHARACTERISTIC: 5.00 AMPERES MAXIMUM COLLECTOR CURRENT, DC
ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE: COLLECTOR
III END ITEM IDENTIFICATION: 1520-01-035-0266
III PRECIOUS MATERIAL: GOLD
III PRECIOUS MATERIAL AND LOCATION: TERMINAL SURFACE OPTION GOLD
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: JUNCTION CONTACT-DARLINGTON CONNECTED
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: TO-33
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 200.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.335 INCHES MINIMUM AND 0.370 INCHES MAXIMUM
OVERALL LENGTH: 0.184 INCHES MINIMUM AND 0.260 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 5.0 WATTS MAXIMUM TOTAL DEVICE DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: BASE (B2) LEAD CUT TO 0.100 IN. NOMINAL; JUNCTION PATTERN ARRANGEMENT: NPN
SPECIFICATION/STANDARD DATA: 81349-MIL-S-19500/472 GOVERNMENT SPECIFICATION
TERMINAL CIRCLE DIAME

C1018

TRANSISTOR

NSN, MFG P/N

5961012919420

NSN

5961-01-291-9420

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C1018

TRANSISTOR

NSN, MFG P/N

5961012919420

NSN

5961-01-291-9420

MFG

CRYSTALONICS INC.

Description

CURRENT RATING PER CHARACTERISTIC: 5.00 AMPERES MAXIMUM COLLECTOR CURRENT, DC
ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE: COLLECTOR
III END ITEM IDENTIFICATION: 1520-01-035-0266
III PRECIOUS MATERIAL: GOLD
III PRECIOUS MATERIAL AND LOCATION: TERMINAL SURFACE OPTION GOLD
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: JUNCTION CONTACT-DARLINGTON CONNECTED
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: TO-33
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 200.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.335 INCHES MINIMUM AND 0.370 INCHES MAXIMUM
OVERALL LENGTH: 0.184 INCHES MINIMUM AND 0.260 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 5.0 WATTS MAXIMUM TOTAL DEVICE DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: BASE (B2) LEAD CUT TO 0.100 IN. NOMINAL; JUNCTION PATTERN ARRANGEMENT: NPN
SPECIFICATION/STANDARD DATA: 81349-MIL-S-19500/472 GOVERNMENT SPECIFICATION
TERMINAL CIRCLE DIAME

JANTX2N6350

TRANSISTOR

NSN, MFG P/N

5961012919420

NSN

5961-01-291-9420

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JANTX2N6350

TRANSISTOR

NSN, MFG P/N

5961012919420

NSN

5961-01-291-9420

MFG

MILITARY SPECIFICATIONS PROMULGATED BY MILITARY DEPARTMENTS/AGENCIES UNDER AUTHORITY OF DEFENSE STANDARDIZATION MANUAL 4120 3-M

Description

CURRENT RATING PER CHARACTERISTIC: 5.00 AMPERES MAXIMUM COLLECTOR CURRENT, DC
ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE: COLLECTOR
III END ITEM IDENTIFICATION: 1520-01-035-0266
III PRECIOUS MATERIAL: GOLD
III PRECIOUS MATERIAL AND LOCATION: TERMINAL SURFACE OPTION GOLD
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: JUNCTION CONTACT-DARLINGTON CONNECTED
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: TO-33
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 200.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.335 INCHES MINIMUM AND 0.370 INCHES MAXIMUM
OVERALL LENGTH: 0.184 INCHES MINIMUM AND 0.260 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 5.0 WATTS MAXIMUM TOTAL DEVICE DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: BASE (B2) LEAD CUT TO 0.100 IN. NOMINAL; JUNCTION PATTERN ARRANGEMENT: NPN
SPECIFICATION/STANDARD DATA: 81349-MIL-S-19500/472 GOVERNMENT SPECIFICATION
TERMINAL CIRCLE DIAME

294-601009-000

SEMICONDUCTOR DEVICE,THYRISTOR

NSN, MFG P/N

5961012919421

NSN

5961-01-291-9421

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294-601009-000

SEMICONDUCTOR DEVICE,THYRISTOR

NSN, MFG P/N

5961012919421

NSN

5961-01-291-9421

MFG

CMC ELECTRONICS INC

2N5573

SEMICONDUCTOR DEVICE,THYRISTOR

NSN, MFG P/N

5961012919421

NSN

5961-01-291-9421

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2N5573

SEMICONDUCTOR DEVICE,THYRISTOR

NSN, MFG P/N

5961012919421

NSN

5961-01-291-9421

MFG

FREESCALE SEMICONDUCTOR INC.

48R134841

TRANSISTOR

NSN, MFG P/N

5961012920049

NSN

5961-01-292-0049

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48R134841

TRANSISTOR

NSN, MFG P/N

5961012920049

NSN

5961-01-292-0049

MFG

FREESCALE SEMICONDUCTOR INC.