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5961-01-292-0050
20 Products
48R02075B01
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961012920050
NSN
5961-01-292-0050
48R02075B01
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961012920050
NSN
5961-01-292-0050
MFG
FREESCALE SEMICONDUCTOR INC.
Description
SEMICONDUCTOR DEVICE,DIODE
Related Searches:
48R02073B01
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961012920051
NSN
5961-01-292-0051
48R02073B01
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961012920051
NSN
5961-01-292-0051
MFG
FREESCALE SEMICONDUCTOR INC.
Description
SEMICONDUCTOR DEVICE,DIODE
Related Searches:
48R191A02
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961012920052
NSN
5961-01-292-0052
MFG
FREESCALE SEMICONDUCTOR INC.
Description
SEMICONDUCTOR DEVICE,DIODE
Related Searches:
JAN1N6172A
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961012920072
NSN
5961-01-292-0072
JAN1N6172A
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961012920072
NSN
5961-01-292-0072
MFG
MILITARY SPECIFICATIONS PROMULGATED BY MILITARY DEPARTMENTS/AGENCIES UNDER AUTHORITY OF DEFENSE STANDARDIZATION MANUAL 4120 3-M
Description
DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: JAN1N6172A
INCLOSURE MATERIAL: GLASS
MANUFACTURERS CODE: 81349
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 175.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
NON-DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: MIL-PRF-19500/516
SEMICONDUCTOR MATERIAL: SILICON
SPEC/STD CONTROLLING DATA:
TERMINAL LENGTH: 1.000 INCHES MINIMUM
TEST DATA DOCUMENT: 81349-MIL-S-19500 SPECIFICATION
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 180.0 NOMINAL REVERSE BREAKDOWN VOLTAGE, DC AND 136.8 NOMINAL WORKING PEAK REVERSE VOLTAGE
Related Searches:
080525
TRANSISTOR
NSN, MFG P/N
5961012920623
NSN
5961-01-292-0623
MFG
NSGDATACOM INC . DBA NETRIX/PROTEON
Description
TRANSISTOR
Related Searches:
080803
TRANSISTOR
NSN, MFG P/N
5961012920624
NSN
5961-01-292-0624
MFG
NSGDATACOM INC . DBA NETRIX/PROTEON
Description
TRANSISTOR
Related Searches:
040230
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961012920625
NSN
5961-01-292-0625
MFG
NSGDATACOM INC . DBA NETRIX/PROTEON
Description
SEMICONDUCTOR DEVICE,DIODE
Related Searches:
SD442
DIODE CONNECTOR ASS
NSN, MFG P/N
5961012921088
NSN
5961-01-292-1088
MFG
BAE SYSTEMS INFORMATION AND ELECTRONIC SYSTEMS INTEGRATION I
Description
DIODE CONNECTOR ASS
Related Searches:
IRF240
TRANSISTOR
NSN, MFG P/N
5961012921568
NSN
5961-01-292-1568
MFG
INTERNATIONAL RECTIFIER CORP ORATION USE CAGE CODE 81483 FOR CATALOGING.
Description
(NON-CORE DATA) CHANNEL POLARITY AND CONTROL TYPE: N-CHANNEL JUNCTION TYPE
CURRENT RATING PER CHARACTERISTIC: 11.00 AMPERES NOMINAL DRAIN CURRENT
INTERNAL CONFIGURATION: FIELD EFFECT
POWER RATING PER CHARACTERISTIC: 125.0 WATTS MAXIMUM TOTAL POWER DISSIPATION
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 4.0 MAXIMUM PEAK-POINT VOLTAGE
Related Searches:
VP0109N2
TRANSISTOR
NSN, MFG P/N
5961012921569
NSN
5961-01-292-1569
MFG
SUPERTEX INC.
Description
(NON-CORE DATA) CHANNEL POLARITY AND CONTROL TYPE: P-CHANNEL JUNCTION TYPE
CURRENT RATING PER CHARACTERISTIC: -0.50 AMPERES MINIMUM ON-STATE DRAIN CURRENT
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: FIELD EFFECT
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.360 INCHES NOMINAL
OVERALL LENGTH: 0.250 INCHES NOMINAL
POWER RATING PER CHARACTERISTIC: 3.5 WATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL CIRCLE DIAMETER: 0.018 INCHES NOMINAL
TERMINAL LENGTH: 0.500 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 3 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: -90.0 MAXIMUM DRAIN TO SOURCE VOLTAGE
Related Searches:
JANTX1N3646
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961012921570
NSN
5961-01-292-1570
JANTX1N3646
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961012921570
NSN
5961-01-292-1570
MFG
MILITARY SPECIFICATIONS PROMULGATED BY MILITARY DEPARTMENTS/AGENCIES UNDER AUTHORITY OF DEFENSE STANDARDIZATION MANUAL 4120 3-M
Description
CURRENT RATING PER CHARACTERISTIC: 250.00 MILLIAMPERES NOMINAL AVERAGE FORWARD CURRENT AVERAGED OVER A FULL 50-HZ CYCLE
DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: JANTX1N3646
MANUFACTURERS CODE: 81349
NON-DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: MIL-S-19500/279
OVERALL LENGTH: 0.230 INCHES MINIMUM AND 0.315 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
SPEC/STD CONTROLLING DATA:
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 2500.0 NOMINAL REVERSE VOLTAGE, INSTANTANEOUS
Related Searches:
1.5KE24CA
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961012921571
NSN
5961-01-292-1571
MFG
PROTEK DEVICES LP DBA PROTEK DEVICES
Description
CURRENT RATING PER CHARACTERISTIC: 5.00 MICROAMPERES NOMINAL REVERSE CURRENT, PEAK
SEMICONDUCTOR MATERIAL: SILICON
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 25.2 MAXIMUM BREAKDOWN VOLTAGE, DC
Related Searches:
1337
SEMICONDUCTOR DEVICES,UNITIZED
NSN, MFG P/N
5961012922092
NSN
5961-01-292-2092
MFG
LOCKHEED MARTIN CORPORATION DBA LOCKHEED MARTIN
Description
COMPONENT NAME AND QUANTITY: 2 TRANSISTOR
CURRENT RATING PER CHARACTERISTIC: 3.00 AMPERES MAXIMUM COLLECTOR CURRENT, DC ALL TRANSISTOR
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
MOUNTING METHOD: PRESS FIT
OVERALL HEIGHT: 0.100 INCHES MAXIMUM
OVERALL LENGTH: 0.250 INCHES MAXIMUM
OVERALL WIDTH: 0.250 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 1.0 WATTS MAXIMUM TOTAL DEVICE DISSIPATION ALL TRANSISTOR
SEMICONDUCTOR MATERIAL: SILICON ALL TRANSISTOR
SPECIAL FEATURES: ALL TRANSISTOR JUNCTION PATTERN ARRANGEMENT: NPN
TERMINAL TYPE AND QUANTITY: 6 UNINSULATED WIRE LEAD
TRANSFER RATIO: 30.0 MINIMUM STATIC FORWARD CURRENT TRANSFER RATIO, COMMON-EMITTER AND 150.0 MAXIMUM STATIC FORWARD CURRENT TRANSFER RATIO, COMMON-EMITTER ALL TRANSISTOR
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 80.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-BASE, EMITTER OPEN AND 50.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-EMITTER, BASE OPEN AND 5.0 MAXIMUM BREAKDOWN VOLTAGE, EMITT
Related Searches:
717801337-001
SEMICONDUCTOR DEVICES,UNITIZED
NSN, MFG P/N
5961012922092
NSN
5961-01-292-2092
717801337-001
SEMICONDUCTOR DEVICES,UNITIZED
NSN, MFG P/N
5961012922092
NSN
5961-01-292-2092
MFG
SOLID STATE DEVICES INC.
Description
COMPONENT NAME AND QUANTITY: 2 TRANSISTOR
CURRENT RATING PER CHARACTERISTIC: 3.00 AMPERES MAXIMUM COLLECTOR CURRENT, DC ALL TRANSISTOR
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
MOUNTING METHOD: PRESS FIT
OVERALL HEIGHT: 0.100 INCHES MAXIMUM
OVERALL LENGTH: 0.250 INCHES MAXIMUM
OVERALL WIDTH: 0.250 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 1.0 WATTS MAXIMUM TOTAL DEVICE DISSIPATION ALL TRANSISTOR
SEMICONDUCTOR MATERIAL: SILICON ALL TRANSISTOR
SPECIAL FEATURES: ALL TRANSISTOR JUNCTION PATTERN ARRANGEMENT: NPN
TERMINAL TYPE AND QUANTITY: 6 UNINSULATED WIRE LEAD
TRANSFER RATIO: 30.0 MINIMUM STATIC FORWARD CURRENT TRANSFER RATIO, COMMON-EMITTER AND 150.0 MAXIMUM STATIC FORWARD CURRENT TRANSFER RATIO, COMMON-EMITTER ALL TRANSISTOR
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 80.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-BASE, EMITTER OPEN AND 50.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-EMITTER, BASE OPEN AND 5.0 MAXIMUM BREAKDOWN VOLTAGE, EMITT
Related Searches:
RF1023R
TRANSISTOR
NSN, MFG P/N
5961012922618
NSN
5961-01-292-2618
MFG
TRW ELECTRONICS AND DEFENSE SECTOR RF DEVICES
Description
TRANSISTOR
Related Searches:
710016-2
RECTIFIER,SEMICONDUCTOR DEVICE
NSN, MFG P/N
5961012922822
NSN
5961-01-292-2822
710016-2
RECTIFIER,SEMICONDUCTOR DEVICE
NSN, MFG P/N
5961012922822
NSN
5961-01-292-2822
MFG
RAYTHEON COMPANY DBA RAYTHEON
Description
OPERATING TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
OVERALL DIAMETER: 1.900 INCHES MAXIMUM
Related Searches:
86-738
RECTIFIER,SEMICONDUCTOR DEVICE
NSN, MFG P/N
5961012922822
NSN
5961-01-292-2822
86-738
RECTIFIER,SEMICONDUCTOR DEVICE
NSN, MFG P/N
5961012922822
NSN
5961-01-292-2822
MFG
MICRO USPD INC
Description
OPERATING TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
OVERALL DIAMETER: 1.900 INCHES MAXIMUM
Related Searches:
TIP136
TRANSISTOR
NSN, MFG P/N
5961012924895
NSN
5961-01-292-4895
MFG
NATIONAL SEMICONDUCTOR CORPORATION
Description
TRANSISTOR
Related Searches:
1RF250
TRANSISTOR
NSN, MFG P/N
5961012926401
NSN
5961-01-292-6401
MFG
SILICONIX INCORPORATED D IV SILICONIX
Description
(NON-CORE DATA) CHANNEL POLARITY AND CONTROL TYPE: N-CHANNEL JUNCTION TYPE
CURRENT RATING PER CHARACTERISTIC: 30.00 AMPERES NOMINAL DRAIN CURRENT
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: T0-204
MOUNTING FACILITY QUANTITY: 2
MOUNTING METHOD: UNTHREADED HOLE
OVERALL HEIGHT: 0.350 INCHES NOMINAL
OVERALL LENGTH: 1.563 INCHES MAXIMUM
OVERALL WIDTH: 1.050 INCHES MAXIMUM
TERMINAL LENGTH: 0.312 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 PIN AND 1 CASE
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 200.0 NOMINAL BREAKDOWN VOLTAGE, DRAIN-TO-SOURCE, WITH ALL OTHER TERMINALS SHORT-CIRCUITED TO SOURCE
Related Searches:
1N3971R
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961012926402
NSN
5961-01-292-6402
MFG
CENTRAL SEMICONDUCTOR CORP DIV CENTRAL STATE INDUSTRIES INC
Description
MOUNTING FACILITY QUANTITY: 1
MOUNTING METHOD: THREADED STUD
NOMINAL THREAD SIZE: 0.250 INCHES
OVERALL LENGTH: 1.453 INCHES MAXIMUM
OVERALL WIDTH ACROSS FLATS: 0.677 INCHES NOMINAL
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL LENGTH: 0.438 INCHES NOMINAL AND 0.550 INCHES MAXIMUM
TERMINAL TYPE AND QUANTITY: 1 TAB, SOLDER LUG AND 1 THREADED STUD
THREAD SERIES DESIGNATOR: UNF
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 800.0 NOMINAL REVERSE VOLTAGE, PEAK
