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5961-01-313-3340
20 Products
151-0716-00
TRANSISTOR
NSN, MFG P/N
5961013133340
NSN
5961-01-313-3340
MFG
TEKTRONIX INC. DBA TEKTRONIX
Description
TRANSISTOR
Related Searches:
92 PU45A
TRANSISTOR
NSN, MFG P/N
5961013133340
NSN
5961-01-313-3340
MFG
NATIONAL SEMICONDUCTOR CORPORATION
Description
TRANSISTOR
Related Searches:
152-0951-00
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961013133341
NSN
5961-01-313-3341
152-0951-00
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961013133341
NSN
5961-01-313-3341
MFG
TEKTRONIX INC. DBA TEKTRONIX
Description
SEMICONDUCTOR DEVICE,DIODE
Related Searches:
89300437
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961013133341
NSN
5961-01-313-3341
MFG
THALES AIR DEFENCE
Description
SEMICONDUCTOR DEVICE,DIODE
Related Searches:
151-0565-00
SEMICONDUCTOR DEVICE,THYRISTOR
NSN, MFG P/N
5961013133343
NSN
5961-01-313-3343
151-0565-00
SEMICONDUCTOR DEVICE,THYRISTOR
NSN, MFG P/N
5961013133343
NSN
5961-01-313-3343
MFG
TEKTRONIX INC. DBA TEKTRONIX
Description
SEMICONDUCTOR DEVICE,THYRISTOR
Related Searches:
SCR2117
SEMICONDUCTOR DEVICE,THYRISTOR
NSN, MFG P/N
5961013133343
NSN
5961-01-313-3343
SCR2117
SEMICONDUCTOR DEVICE,THYRISTOR
NSN, MFG P/N
5961013133343
NSN
5961-01-313-3343
MFG
FREESCALE SEMICONDUCTOR INC.
Description
SEMICONDUCTOR DEVICE,THYRISTOR
Related Searches:
2003647-1
RECTIFIER,SEMICONDUCTOR DEVICE,UNITIZED
NSN, MFG P/N
5961013134449
NSN
5961-01-313-4449
2003647-1
RECTIFIER,SEMICONDUCTOR DEVICE,UNITIZED
NSN, MFG P/N
5961013134449
NSN
5961-01-313-4449
MFG
BAE SYSTEMS INFORMATION AND ELECTRONIC SYSTEMS INTEGRATION I
Description
ABSOLUTE MAXIMUM CURRENT RATING PER CHARACTERISTIC: 2.00 AMPERES AVERAGE FORWARD CURRENT AVERAGED OVER A FULL 60-HZ CYCLE
ABSOLUTE MAXIMUM VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 400.0 PEAK INVERSE VOLTAGE
CIRCUIT CONNECTION STYLE DESIGNATOR: A7 BRIDGE 1 PHASE
MATERIAL: SILICON
MOUNTING METHOD: UNTHREADED HOLE
OPERATING TEMP RANGE: -55.0 TO 150.0 DEG CELSIUS
OVERALL HEIGHT: 0.300 INCHES MAXIMUM
OVERALL LENGTH: 0.765 INCHES MAXIMUM
OVERALL WIDTH: 0.765 INCHES MAXIMUM
TERMINAL TYPE AND QUANTITY: 4 TURRET
Related Searches:
HRSCAJ4
RECTIFIER,SEMICONDUCTOR DEVICE,UNITIZED
NSN, MFG P/N
5961013134449
NSN
5961-01-313-4449
HRSCAJ4
RECTIFIER,SEMICONDUCTOR DEVICE,UNITIZED
NSN, MFG P/N
5961013134449
NSN
5961-01-313-4449
MFG
SEMTECH CORPORATION
Description
ABSOLUTE MAXIMUM CURRENT RATING PER CHARACTERISTIC: 2.00 AMPERES AVERAGE FORWARD CURRENT AVERAGED OVER A FULL 60-HZ CYCLE
ABSOLUTE MAXIMUM VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 400.0 PEAK INVERSE VOLTAGE
CIRCUIT CONNECTION STYLE DESIGNATOR: A7 BRIDGE 1 PHASE
MATERIAL: SILICON
MOUNTING METHOD: UNTHREADED HOLE
OPERATING TEMP RANGE: -55.0 TO 150.0 DEG CELSIUS
OVERALL HEIGHT: 0.300 INCHES MAXIMUM
OVERALL LENGTH: 0.765 INCHES MAXIMUM
OVERALL WIDTH: 0.765 INCHES MAXIMUM
TERMINAL TYPE AND QUANTITY: 4 TURRET
Related Searches:
4M85SR60Z1-1C
RECTIFIER,SEMICONDUCTOR DEVICE
NSN, MFG P/N
5961013135514
NSN
5961-01-313-5514
4M85SR60Z1-1C
RECTIFIER,SEMICONDUCTOR DEVICE
NSN, MFG P/N
5961013135514
NSN
5961-01-313-5514
MFG
HOLMES CARL E CO
Description
ABSOLUTE MAXIMUM CURRENT RATING PER CHARACTERISTIC: 70.00 AMPERES TOTAL POWER DISSIPATION
ABSOLUTE MAXIMUM VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 40.2 SOURCE SUPPLY VOLTAGE
CIRCUIT CONNECTION STYLE DESIGNATOR: 9 CENTER TAP 3 PHASE
DESIGN CONTROL REFERENCE: 4M85SR60Z1-1C
III END ITEM IDENTIFICATION: USED IN PROPULSION CONTROL SWITCHBOARD PART NUMBER D-82-3008-3CG-01 ONBOARD 180 FT WPB SLEP COAST GUARD VESSELS
MANUFACTURERS CODE: 00891
MATERIAL: SILICON
MOUNTING METHOD: UNTHREADED HOLE
OVERALL HEIGHT: 6.000 INCHES NOMINAL
OVERALL WIDTH: 14.000 INCHES NOMINAL
SPECIAL FEATURES: EQUIPPED WITH SURGE SUPPRESSOR
TERMINAL TYPE AND QUANTITY: 5 TAB W/SCREW
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15KP130A
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961013136056
NSN
5961-01-313-6056
MFG
PROTEK DEVICES LP DBA PROTEK DEVICES
Description
SEMICONDUCTOR DEVICE,DIODE
Related Searches:
A56216
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961013136056
NSN
5961-01-313-6056
MFG
BOGUE ELECTRIC MANUFACTURING CO
Description
SEMICONDUCTOR DEVICE,DIODE
Related Searches:
08901-80005
SEMICONDUCTOR DEVICE SET
NSN, MFG P/N
5961013136057
NSN
5961-01-313-6057
MFG
AVAGO TECHNOLOGIES U.S. INC. DIV AVAGO TECHNOLOGIES
Description
COMPONENT FUNCTION RELATIONSHIP: MATCHED
COMPONENT NAME AND QUANTITY: 2 SEMICONDUCTOR DEVICE DIODE
III END ITEM IDENTIFICATION: 6625-01-255-1620 TEST SET,ELECTRONIC SYSTEMS
INCLOSURE MATERIAL: PLASTIC ALL SEMICONDUCTOR DEVICE DIODE
INTERNAL CONFIGURATION: JUNCTION CONTACT ALL SEMICONDUCTOR DEVICE DIODE
INTERNAL JUNCTION CONFIGURATION: PN ALL SEMICONDUCTOR DEVICE DIODE
MOUNTING METHOD: TERMINAL ALL SEMICONDUCTOR DEVICE DIODE
OVERALL DIAMETER: 0.100 INCHES NOMINAL ALL SEMICONDUCTOR DEVICE DIODE
OVERALL LENGTH: 0.300 INCHES NOMINAL ALL SEMICONDUCTOR DEVICE DIODE
SEMICONDUCTOR MATERIAL: SILICON ALL SEMICONDUCTOR DEVICE DIODE
TERMINAL LENGTH: 1.000 INCHES NOMINAL ALL SEMICONDUCTOR DEVICE DIODE
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD ALL SEMICONDUCTOR DEVICE DIODE
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 20.0 MINIMUM BREAKDOWN VOLTAGE, INSTANTANEOUS AND 0.41 NOMINAL FORWARD VOLTAGE, DC ALL SEMICONDUCTOR DEVICE DIODE
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723270
RECTIFIER,SEMICONDUCTOR DEVICE,UNITIZED
NSN, MFG P/N
5961013136122
NSN
5961-01-313-6122
723270
RECTIFIER,SEMICONDUCTOR DEVICE,UNITIZED
NSN, MFG P/N
5961013136122
NSN
5961-01-313-6122
MFG
FLUKE CORPORATION
Description
ABSOLUTE MAXIMUM CURRENT RATING PER CHARACTERISTIC: 1.50 AMPERES AVERAGE FORWARD CURRENT AVERAGED OVER A FULL 60-HZ CYCLE
ABSOLUTE MAXIMUM VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 1000.0 REPETITIVE PEAK REVERSE VOLTAGE, MAXIMUM PEAK TOTAL VALUE
CIRCUIT CONNECTION STYLE DESIGNATOR: A7 BRIDGE 1 PHASE
MATERIAL: SILICON
MOUNTING METHOD: TERMINAL
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OVERALL HEIGHT: 0.300 INCHES MAXIMUM
OVERALL LENGTH: 0.580 INCHES MAXIMUM
OVERALL WIDTH: 0.750 INCHES MAXIMUM
TERMINAL TYPE AND QUANTITY: 4 UNINSULATED WIRE LEAD
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FWL 1000
RECTIFIER,SEMICONDUCTOR DEVICE,UNITIZED
NSN, MFG P/N
5961013136122
NSN
5961-01-313-6122
FWL 1000
RECTIFIER,SEMICONDUCTOR DEVICE,UNITIZED
NSN, MFG P/N
5961013136122
NSN
5961-01-313-6122
MFG
SOLITRON DEVICES INC.
Description
ABSOLUTE MAXIMUM CURRENT RATING PER CHARACTERISTIC: 1.50 AMPERES AVERAGE FORWARD CURRENT AVERAGED OVER A FULL 60-HZ CYCLE
ABSOLUTE MAXIMUM VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 1000.0 REPETITIVE PEAK REVERSE VOLTAGE, MAXIMUM PEAK TOTAL VALUE
CIRCUIT CONNECTION STYLE DESIGNATOR: A7 BRIDGE 1 PHASE
MATERIAL: SILICON
MOUNTING METHOD: TERMINAL
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OVERALL HEIGHT: 0.300 INCHES MAXIMUM
OVERALL LENGTH: 0.580 INCHES MAXIMUM
OVERALL WIDTH: 0.750 INCHES MAXIMUM
TERMINAL TYPE AND QUANTITY: 4 UNINSULATED WIRE LEAD
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KBP 10M
RECTIFIER,SEMICONDUCTOR DEVICE,UNITIZED
NSN, MFG P/N
5961013136122
NSN
5961-01-313-6122
KBP 10M
RECTIFIER,SEMICONDUCTOR DEVICE,UNITIZED
NSN, MFG P/N
5961013136122
NSN
5961-01-313-6122
MFG
GENERAL SEMICONDUCTOR INC
Description
ABSOLUTE MAXIMUM CURRENT RATING PER CHARACTERISTIC: 1.50 AMPERES AVERAGE FORWARD CURRENT AVERAGED OVER A FULL 60-HZ CYCLE
ABSOLUTE MAXIMUM VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 1000.0 REPETITIVE PEAK REVERSE VOLTAGE, MAXIMUM PEAK TOTAL VALUE
CIRCUIT CONNECTION STYLE DESIGNATOR: A7 BRIDGE 1 PHASE
MATERIAL: SILICON
MOUNTING METHOD: TERMINAL
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OVERALL HEIGHT: 0.300 INCHES MAXIMUM
OVERALL LENGTH: 0.580 INCHES MAXIMUM
OVERALL WIDTH: 0.750 INCHES MAXIMUM
TERMINAL TYPE AND QUANTITY: 4 UNINSULATED WIRE LEAD
Related Searches:
91535158
TRANSISTOR
NSN, MFG P/N
5961013136408
NSN
5961-01-313-6408
MFG
THALES
Description
(NON-CORE DATA) CHANNEL POLARITY AND CONTROL TYPE: N-CHANNEL JUNCTION TYPE
CURRENT RATING PER CHARACTERISTIC: 0.10 NANOAMPERES MAXIMUM REVERSE GATE CURRENT WITH ALL OTHER TERMINALS SHORT-CIRCUIT TO SOURCE, JUNCTION-GATE AND 7.00 MILLIAMPERES MINIMUM ZERO-GATE-VOLTAGE DRAIN CURRENT AND 20.00 MILLIAMPERES MAXIMUM ZERO-GATE-VOLTAGE DRAIN CURRENT
INTERNAL CONFIGURATION: FIELD EFFECT
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: TO-92
MOUNTING METHOD: TERMINAL
OVERALL HEIGHT: 0.670 INCHES MINIMUM
OVERALL LENGTH: 0.190 INCHES NOMINAL
OVERALL WIDTH: 0.145 INCHES NOMINAL
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL LENGTH: 0.500 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 3 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 25.0 MINIMUM BREAKDOWN VOLTAGE, GATE-TO-SOURCE, WITH ALL OTHER TERMINALS SHORT-CIRCUITED TO SOURCE AND 2.5 MINIMUM PEAK-POINT VOLTAGE AND 4.5 MAXIMUM PEAK-POINT VOLTAGE
Related Searches:
J211
TRANSISTOR
NSN, MFG P/N
5961013136408
NSN
5961-01-313-6408
MFG
FAIRCHILD SEMICONDUCTOR CORP
Description
(NON-CORE DATA) CHANNEL POLARITY AND CONTROL TYPE: N-CHANNEL JUNCTION TYPE
CURRENT RATING PER CHARACTERISTIC: 0.10 NANOAMPERES MAXIMUM REVERSE GATE CURRENT WITH ALL OTHER TERMINALS SHORT-CIRCUIT TO SOURCE, JUNCTION-GATE AND 7.00 MILLIAMPERES MINIMUM ZERO-GATE-VOLTAGE DRAIN CURRENT AND 20.00 MILLIAMPERES MAXIMUM ZERO-GATE-VOLTAGE DRAIN CURRENT
INTERNAL CONFIGURATION: FIELD EFFECT
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: TO-92
MOUNTING METHOD: TERMINAL
OVERALL HEIGHT: 0.670 INCHES MINIMUM
OVERALL LENGTH: 0.190 INCHES NOMINAL
OVERALL WIDTH: 0.145 INCHES NOMINAL
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL LENGTH: 0.500 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 3 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 25.0 MINIMUM BREAKDOWN VOLTAGE, GATE-TO-SOURCE, WITH ALL OTHER TERMINALS SHORT-CIRCUITED TO SOURCE AND 2.5 MINIMUM PEAK-POINT VOLTAGE AND 4.5 MAXIMUM PEAK-POINT VOLTAGE
Related Searches:
BD139
TRANSISTOR
NSN, MFG P/N
5961013136409
NSN
5961-01-313-6409
MFG
FREESCALE SEMICONDUCTOR INC.
Description
CURRENT RATING PER CHARACTERISTIC: 500.00 MILLIAMPERES NOMINAL COLLECTOR CURRENT, DC
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: TO-126
POWER RATING PER CHARACTERISTIC: 6.5 WATTS NOMINAL COLLECTOR POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON ALLOY
Related Searches:
BD-330
TRANSISTOR
NSN, MFG P/N
5961013136410
NSN
5961-01-313-6410
MFG
FREESCALE SEMICONDUCTOR INC.
Description
CURRENT RATING PER CHARACTERISTIC: 3.00 AMPERES NOMINAL COLLECTOR CURRENT, DC
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: TO-126
POWER RATING PER CHARACTERISTIC: 15.0 WATTS NOMINAL TOTAL NONREACTIVE POWER INPUT TO ALL TERMINALS
SEMICONDUCTOR MATERIAL: SILICON ALLOY
Related Searches:
5KP58A
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961013136411
NSN
5961-01-313-6411
MFG
PROTEK DEVICES LP DBA PROTEK DEVICES
Description
SEMICONDUCTOR DEVICE,DIODE
