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5961-01-328-1058
20 Products
932541-0001
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961013281058
NSN
5961-01-328-1058
932541-0001
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961013281058
NSN
5961-01-328-1058
MFG
NORTHROP GRUMMAN GUIDANCE AND ELECTRONICS COMPANY INC. DBA NAVIGATION SYSTEMS DIVISION DIV NAVIGATION SYSTEMS DIVISION
Description
SEMICONDUCTOR DEVICE,DIODE
Related Searches:
932354-0001
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961013281060
NSN
5961-01-328-1060
932354-0001
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961013281060
NSN
5961-01-328-1060
MFG
NORTHROP GRUMMAN GUIDANCE AND ELECTRONICS COMPANY INC. DBA NAVIGATION SYSTEMS DIVISION DIV NAVIGATION SYSTEMS DIVISION
Description
SEMICONDUCTOR DEVICE,DIODE
Related Searches:
JANTX1N3307B
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961013281760
NSN
5961-01-328-1760
JANTX1N3307B
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961013281760
NSN
5961-01-328-1760
MFG
MILITARY SPECIFICATIONS PROMULGATED BY MILITARY DEPARTMENTS/AGENCIES UNDER AUTHORITY OF DEFENSE STANDARDIZATION MANUAL 4120 3-M
Description
CURRENT RATING PER CHARACTERISTIC: 5.80 AMPERES MAXIMUM VOLTAGE REGULATOR DIODE CURRENT
DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: JANTX1N3307B
ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE: ANODE
FEATURES PROVIDED: QUALITY ASSURANCE LEVEL TX AND BURN IN
FUNCTION FOR WHICH DESIGNED: VOLTAGE REGULATOR
INCLOSURE MATERIAL: METAL
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: DO-5
MANUFACTURERS CODE: 81349
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 150.0 DEG CELSIUS JUNCTION
MOUNTING FACILITY QUANTITY: 1
MOUNTING METHOD: THREADED STUD
NOMINAL THREAD SIZE: 0.250 INCHES
NON-DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: MIL-PRF-19500/358
OVERALL LENGTH: 1.453 INCHES MAXIMUM
OVERALL WIDTH ACROSS FLATS: 0.667 INCHES MINIMUM AND 0.687 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 50.0 WATTS NOMINAL TOTAL DEVICE DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPEC/STD CONTROLLING DATA:
SPECIFICATION/STANDARD DATA: 81349-MIL-S-19500/358
Related Searches:
JANTX1N3308RB
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961013281761
NSN
5961-01-328-1761
JANTX1N3308RB
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961013281761
NSN
5961-01-328-1761
MFG
MILITARY SPECIFICATIONS PROMULGATED BY MILITARY DEPARTMENTS/AGENCIES UNDER AUTHORITY OF DEFENSE STANDARDIZATION MANUAL 4120 3-M
Description
CURRENT RATING PER CHARACTERISTIC: 5.24 AMPERES MAXIMUM VOLTAGE REGULATOR DIODE CURRENT
DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: JANTX1N3308RB
FEATURES PROVIDED: QUALITY ASSURANCE LEVEL TX AND BURN IN AND HERMETICALLY SEALED CASE AND REVERSE POLARITY
FUNCTION FOR WHICH DESIGNED: VOLTAGE REGULATOR
INCLOSURE MATERIAL: METAL
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: DO-5
MANUFACTURERS CODE: 81349
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 150.0 DEG CELSIUS JUNCTION
MOUNTING FACILITY QUANTITY: 1
MOUNTING METHOD: THREADED STUD
NOMINAL THREAD SIZE: 0.250 INCHES
NON-DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: MIL-PRF-19500/358
OVERALL LENGTH: 1.453 INCHES MAXIMUM
OVERALL WIDTH ACROSS FLATS: 0.667 INCHES MINIMUM AND 0.687 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 50.0 WATTS NOMINAL TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPEC/STD CONTROLLING DATA:
SPECIFICATION/STANDARD DATA: 81349-MIL-S-19500/358 GOVERNMENT
Related Searches:
G279420/1
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961013282104
NSN
5961-01-328-2104
MFG
RAYTHEON TECHNICAL SERVICES COMPANY LLC DBA RAYTHEON
Description
DESIGN CONTROL REFERENCE: G279420/1
III END ITEM IDENTIFICATION: AN/BSY-1(V)
MANUFACTURERS CODE: 3B150
THE MANUFACTURERS DATA:
Related Searches:
2N5399
TRANSISTOR
NSN, MFG P/N
5961013282838
NSN
5961-01-328-2838
MFG
CRIMSON SEMICONDUCTOR INC
Description
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: T0-46
SEMICONDUCTOR MATERIAL: SILICON
Related Searches:
71011433001
TRANSISTOR
NSN, MFG P/N
5961013282839
NSN
5961-01-328-2839
MFG
KOLLSMAN INC.
Description
(NON-CORE DATA) CHANNEL POLARITY AND CONTROL TYPE: N-CHANNEL INSULATED GATE TYPE
FEATURES PROVIDED: HERMETICALLY SEALED CASE
III PRECIOUS MATERIAL AND LOCATION: PACKAGE BASE GOLD
INCLOSURE MATERIAL: CERAMIC
INTERNAL CONFIGURATION: FIELD EFFECT
MOUNTING METHOD: TERMINAL
OVERALL HEIGHT: 0.035 INCHES NOMINAL
OVERALL LENGTH: 0.070 INCHES NOMINAL
OVERALL WIDTH: 0.070 INCHES NOMINAL
POWER RATING PER CHARACTERISTIC: 450.0 MILLIWATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: GALLIUM ARSENIDE
TERMINAL LENGTH: 0.213 INCHES NOMINAL
TERMINAL TYPE AND QUANTITY: 4 RIBBON
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 7.0 MAXIMUM DRAIN TO SOURCE VOLTAGE AND -4.0 MAXIMUM GATE TO SOURCE VOLTAGE
Related Searches:
AT-8250
TRANSISTOR
NSN, MFG P/N
5961013282839
NSN
5961-01-328-2839
MFG
AGILENT TECHNOLOGIES INC. DIV SEMICONDUCTOR PRODUCTS GROUP BUSINESS CENTER
Description
(NON-CORE DATA) CHANNEL POLARITY AND CONTROL TYPE: N-CHANNEL INSULATED GATE TYPE
FEATURES PROVIDED: HERMETICALLY SEALED CASE
III PRECIOUS MATERIAL AND LOCATION: PACKAGE BASE GOLD
INCLOSURE MATERIAL: CERAMIC
INTERNAL CONFIGURATION: FIELD EFFECT
MOUNTING METHOD: TERMINAL
OVERALL HEIGHT: 0.035 INCHES NOMINAL
OVERALL LENGTH: 0.070 INCHES NOMINAL
OVERALL WIDTH: 0.070 INCHES NOMINAL
POWER RATING PER CHARACTERISTIC: 450.0 MILLIWATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: GALLIUM ARSENIDE
TERMINAL LENGTH: 0.213 INCHES NOMINAL
TERMINAL TYPE AND QUANTITY: 4 RIBBON
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 7.0 MAXIMUM DRAIN TO SOURCE VOLTAGE AND -4.0 MAXIMUM GATE TO SOURCE VOLTAGE
Related Searches:
CR30-01
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961013282840
NSN
5961-01-328-2840
MFG
ELDEC CORPORATION DBA CRANE AEROSPACE & ELECTRONIC
Description
III END ITEM IDENTIFICATION: BULK STORE UNIT5821-99-792-7328
Related Searches:
1N5712
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961013282841
NSN
5961-01-328-2841
MFG
AVAGO TECHNOLOGIES U.S. INC. DIV AVAGO TECHNOLOGIES
Description
CURRENT RATING PER CHARACTERISTIC: 10.00 MICROAMPERES MAXIMUM REVERSE CURRENT, DC
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: GLASS
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 125.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.068 INCHES MINIMUM AND 0.076 INCHES MAXIMUM
OVERALL LENGTH: 0.150 INCHES MINIMUM AND 0.170 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 250.0 MILLIWATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL LENGTH: 1.000 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 20.0 MAXIMUM BREAKDOWN VOLTAGE, DC
Related Searches:
353-3691-040
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961013282841
NSN
5961-01-328-2841
353-3691-040
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961013282841
NSN
5961-01-328-2841
MFG
ROCKWELL COLLINS INC. DBA GOVERNMENT SYSTEMS DIV GOVERNMENT SYSTEMS
Description
CURRENT RATING PER CHARACTERISTIC: 10.00 MICROAMPERES MAXIMUM REVERSE CURRENT, DC
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: GLASS
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 125.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.068 INCHES MINIMUM AND 0.076 INCHES MAXIMUM
OVERALL LENGTH: 0.150 INCHES MINIMUM AND 0.170 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 250.0 MILLIWATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL LENGTH: 1.000 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 20.0 MAXIMUM BREAKDOWN VOLTAGE, DC
Related Searches:
ZL4033-0
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961013282841
NSN
5961-01-328-2841
MFG
SAAB AB PUPL - ELECTRONIC DEFENCE SYSTEMS
Description
CURRENT RATING PER CHARACTERISTIC: 10.00 MICROAMPERES MAXIMUM REVERSE CURRENT, DC
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: GLASS
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 125.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.068 INCHES MINIMUM AND 0.076 INCHES MAXIMUM
OVERALL LENGTH: 0.150 INCHES MINIMUM AND 0.170 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 250.0 MILLIWATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL LENGTH: 1.000 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 20.0 MAXIMUM BREAKDOWN VOLTAGE, DC
Related Searches:
3710608
RECTIFIER,SEMICONDUCTOR DEVICE,UNITIZED
NSN, MFG P/N
5961013284675
NSN
5961-01-328-4675
3710608
RECTIFIER,SEMICONDUCTOR DEVICE,UNITIZED
NSN, MFG P/N
5961013284675
NSN
5961-01-328-4675
MFG
SWEO CONTROLS INC DBA BALDOR SWEO DRIVE
Description
ABSOLUTE MAXIMUM CURRENT RATING PER CHARACTERISTIC: 60.00 AMPERES OFF-STATE CURRENT, DC
ABSOLUTE MAXIMUM VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 800.0 REPETITIVE PEAK REVERSE VOLTAGE AND 800.0 NONREPETITIVE PEAK REVERSE VOLTAGE
CIRCUIT CONNECTION STYLE DESIGNATOR: A8 BRIDGE 3 PHASE
III END ITEM IDENTIFICATION: TRAINING SET,ELECTRONIC WARFARE AN/MST-T1A
MATERIAL: SILICON
MOUNTING METHOD: UNTHREADED HOLE
OPERATING TEMP RANGE: -40.0 TO 125.0 DEG CELSIUS
OVERALL HEIGHT: 41.0 MILLIMETERS NOMINAL
OVERALL LENGTH: 65.0 MILLIMETERS NOMINAL
OVERALL WIDTH: 48.0 MILLIMETERS NOMINAL
TERMINAL TYPE AND QUANTITY: 5 TAB W/SCREW
Related Searches:
SKD60/08
RECTIFIER,SEMICONDUCTOR DEVICE,UNITIZED
NSN, MFG P/N
5961013284675
NSN
5961-01-328-4675
SKD60/08
RECTIFIER,SEMICONDUCTOR DEVICE,UNITIZED
NSN, MFG P/N
5961013284675
NSN
5961-01-328-4675
MFG
SEMIKRON INTL INC
Description
ABSOLUTE MAXIMUM CURRENT RATING PER CHARACTERISTIC: 60.00 AMPERES OFF-STATE CURRENT, DC
ABSOLUTE MAXIMUM VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 800.0 REPETITIVE PEAK REVERSE VOLTAGE AND 800.0 NONREPETITIVE PEAK REVERSE VOLTAGE
CIRCUIT CONNECTION STYLE DESIGNATOR: A8 BRIDGE 3 PHASE
III END ITEM IDENTIFICATION: TRAINING SET,ELECTRONIC WARFARE AN/MST-T1A
MATERIAL: SILICON
MOUNTING METHOD: UNTHREADED HOLE
OPERATING TEMP RANGE: -40.0 TO 125.0 DEG CELSIUS
OVERALL HEIGHT: 41.0 MILLIMETERS NOMINAL
OVERALL LENGTH: 65.0 MILLIMETERS NOMINAL
OVERALL WIDTH: 48.0 MILLIMETERS NOMINAL
TERMINAL TYPE AND QUANTITY: 5 TAB W/SCREW
Related Searches:
SKB30/02A1
RECTIFIER,SEMICONDUCTOR DEVICE,UNITIZED
NSN, MFG P/N
5961013284677
NSN
5961-01-328-4677
SKB30/02A1
RECTIFIER,SEMICONDUCTOR DEVICE,UNITIZED
NSN, MFG P/N
5961013284677
NSN
5961-01-328-4677
MFG
SEMIKRON INTL INC
Description
ABSOLUTE MAXIMUM CURRENT RATING PER CHARACTERISTIC: 30.00 AMPERES OFF-STATE CURRENT, DC
ABSOLUTE MAXIMUM VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 200.0 REPETITIVE PEAK REVERSE VOLTAGE AND 200.0 NONREPETITIVE PEAK REVERSE VOLTAGE
CIRCUIT CONNECTION STYLE DESIGNATOR: A7 BRIDGE 1 PHASE
MATERIAL: SILICON
MOUNTING METHOD: UNTHREADED HOLE
OPERATING TEMP RANGE: -40.0 TO 150.0 DEG CELSIUS
OVERALL HEIGHT: 24.0 MILLIMETERS NOMINAL
OVERALL LENGTH: 55.0 MILLIMETERS NOMINAL
OVERALL WIDTH: 45.0 MILLIMETERS NOMINAL
TERMINAL TYPE AND QUANTITY: 4 TAB W/SCREW
Related Searches:
61534
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961013285184
NSN
5961-01-328-5184
MFG
THERMO ELECTRON CORPORATION DBA IEC CENTRIFUGE DIV LABORATORY EQUIPMENT DIVSION
Description
DESIGN CONTROL REFERENCE: 61534
III END ITEM IDENTIFICATION: 6640-01-308-7749
MANUFACTURERS CODE: 30988
SPECIAL FEATURES: DIODE BRIDGE; FOR USE ON CENTRIFUGE,LAB,REFRIGERATED; MDL. 3447
THE MANUFACTURERS DATA:
Related Searches:
615467-907
TRANSISTOR
NSN, MFG P/N
5961013285484
NSN
5961-01-328-5484
MFG
RAYTHEON COMPANY DBA RAYTHEON
Description
CURRENT RATING PER CHARACTERISTIC: 0.50 AMPERES MAXIMUM COLLECTOR CURRENT, DC
FEATURES PROVIDED: BURN IN AND HERMETICALLY SEALED CASE
III END ITEM IDENTIFICATION: RADIO SET AN/ARC-187
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: JUNCTION CONTACT
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 150.0 DEG CELSIUS JUNCTION
MOUNTING FACILITY QUANTITY: 1
MOUNTING METHOD: THREADED STUD
NOMINAL THREAD SIZE: 0.164 INCHES
OVERALL HEIGHT: 0.395 INCHES MINIMUM AND 0.453 INCHES MAXIMUM
OVERALL LENGTH: 0.870 INCHES MINIMUM AND 1.065 INCHES MAXIMUM
OVERALL WIDTH: 0.870 INCHES MINIMUM AND 1.065 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 5.0 WATTS MAXIMUM TOTAL DEVICE DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: NPN
TERMINAL TYPE AND QUANTITY: 4 RIBBON
THREAD SERIES DESIGNATOR: UNC
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 33.0 MAXIMUM COLLECTOR TO EMITTER VOLTAGE/STATIC/BASE OPEN AND 60.0 MAXIMUM COLLECTOR TO BASE VOLT
Related Searches:
MRF5174
TRANSISTOR
NSN, MFG P/N
5961013285484
NSN
5961-01-328-5484
MFG
FREESCALE SEMICONDUCTOR INC.
Description
CURRENT RATING PER CHARACTERISTIC: 0.50 AMPERES MAXIMUM COLLECTOR CURRENT, DC
FEATURES PROVIDED: BURN IN AND HERMETICALLY SEALED CASE
III END ITEM IDENTIFICATION: RADIO SET AN/ARC-187
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: JUNCTION CONTACT
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 150.0 DEG CELSIUS JUNCTION
MOUNTING FACILITY QUANTITY: 1
MOUNTING METHOD: THREADED STUD
NOMINAL THREAD SIZE: 0.164 INCHES
OVERALL HEIGHT: 0.395 INCHES MINIMUM AND 0.453 INCHES MAXIMUM
OVERALL LENGTH: 0.870 INCHES MINIMUM AND 1.065 INCHES MAXIMUM
OVERALL WIDTH: 0.870 INCHES MINIMUM AND 1.065 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 5.0 WATTS MAXIMUM TOTAL DEVICE DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: NPN
TERMINAL TYPE AND QUANTITY: 4 RIBBON
THREAD SERIES DESIGNATOR: UNC
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 33.0 MAXIMUM COLLECTOR TO EMITTER VOLTAGE/STATIC/BASE OPEN AND 60.0 MAXIMUM COLLECTOR TO BASE VOLT
Related Searches:
143117066-02
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961013285485
NSN
5961-01-328-5485
143117066-02
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961013285485
NSN
5961-01-328-5485
MFG
EATON CORPORATION
Description
SEMICONDUCTOR DEVICE,DIODE
Related Searches:
80-7426
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961013285485
NSN
5961-01-328-5485
MFG
INTERNATIONAL RECTIFIER CORP ORATION USE CAGE CODE 81483 FOR CATALOGING.
Description
SEMICONDUCTOR DEVICE,DIODE
