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5961-01-336-8900
20 Products
578799
TRANSISTOR
NSN, MFG P/N
5961013368900
NSN
5961-01-336-8900
MFG
FLUKE CORPORATION
Description
TRANSISTOR
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8880200032-1
TRANSISTOR
NSN, MFG P/N
5961013370050
NSN
5961-01-337-0050
MFG
NAVCOM DEFENSE ELECTRONICS INC.
Description
CURRENT RATING PER CHARACTERISTIC: 1.50 AMPERES MAXIMUM COLLECTOR CURRENT, DC
ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE: BASE
FEATURES PROVIDED: WIDEBAND
FUNCTION FOR WHICH DESIGNED: MICROWAVE
III END ITEM IDENTIFICATION: NAVIGATIONAL SET,TACAN AN/URN-25
INCLOSURE MATERIAL: METAL
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 150.0 DEG CELSIUS JUNCTION
MOUNTING FACILITY QUANTITY: 2
MOUNTING METHOD: UNTHREADED HOLE
OVERALL HEIGHT: 0.160 INCHES MINIMUM AND 0.180 INCHES MAXIMUM
OVERALL LENGTH: 0.790 INCHES MINIMUM AND 0.810 INCHES MAXIMUM
OVERALL WIDTH: 0.255 INCHES MINIMUM AND 0.265 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 22.0 WATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 2 RIBBON AND 1 CASE
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 28.0 MAXIMUM COLLECTOR SUPPLY VOLTAGE
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MRA 409
TRANSISTOR
NSN, MFG P/N
5961013370050
NSN
5961-01-337-0050
MFG
FREESCALE SEMICONDUCTOR INC.
Description
CURRENT RATING PER CHARACTERISTIC: 1.50 AMPERES MAXIMUM COLLECTOR CURRENT, DC
ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE: BASE
FEATURES PROVIDED: WIDEBAND
FUNCTION FOR WHICH DESIGNED: MICROWAVE
III END ITEM IDENTIFICATION: NAVIGATIONAL SET,TACAN AN/URN-25
INCLOSURE MATERIAL: METAL
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 150.0 DEG CELSIUS JUNCTION
MOUNTING FACILITY QUANTITY: 2
MOUNTING METHOD: UNTHREADED HOLE
OVERALL HEIGHT: 0.160 INCHES MINIMUM AND 0.180 INCHES MAXIMUM
OVERALL LENGTH: 0.790 INCHES MINIMUM AND 0.810 INCHES MAXIMUM
OVERALL WIDTH: 0.255 INCHES MINIMUM AND 0.265 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 22.0 WATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 2 RIBBON AND 1 CASE
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 28.0 MAXIMUM COLLECTOR SUPPLY VOLTAGE
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133724-43
TRANSISTOR
NSN, MFG P/N
5961013370051
NSN
5961-01-337-0051
MFG
LOCKHEED MARTIN CORPORATION DBA LOCKHEED MARTIN DIV MISSILES AND FIRE CONTROL - ARCHBALD
Description
(NON-CORE DATA) DEPARTURE FROM CITED DOCUMENT: MATERIAL WILL BE IN ACCORDANCE WITH SHIPS PARTS CONTROL CENTER ACTIVITY HX QUALITY CONTROL,MANUFACTURING AND TESTING SPECIFICATIONS
CRITICALITY CODE JUSTIFICATION: ZZZW
MANUFACTURERS CODE: 81349
NON-DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: JAN2N6784
SPEC/STD CONTROLLING DATA:
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6N605PC36
TRANSISTOR
NSN, MFG P/N
5961013370051
NSN
5961-01-337-0051
MFG
DRS POWER & CONTROL TECHNOLOGIES INC.
Description
(NON-CORE DATA) DEPARTURE FROM CITED DOCUMENT: MATERIAL WILL BE IN ACCORDANCE WITH SHIPS PARTS CONTROL CENTER ACTIVITY HX QUALITY CONTROL,MANUFACTURING AND TESTING SPECIFICATIONS
CRITICALITY CODE JUSTIFICATION: ZZZW
MANUFACTURERS CODE: 81349
NON-DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: JAN2N6784
SPEC/STD CONTROLLING DATA:
Related Searches:
JAN2N6784
TRANSISTOR
NSN, MFG P/N
5961013370051
NSN
5961-01-337-0051
MFG
MILITARY SPECIFICATIONS PROMULGATED BY MILITARY DEPARTMENTS/AGENCIES UNDER AUTHORITY OF DEFENSE STANDARDIZATION MANUAL 4120 3-M
Description
(NON-CORE DATA) DEPARTURE FROM CITED DOCUMENT: MATERIAL WILL BE IN ACCORDANCE WITH SHIPS PARTS CONTROL CENTER ACTIVITY HX QUALITY CONTROL,MANUFACTURING AND TESTING SPECIFICATIONS
CRITICALITY CODE JUSTIFICATION: ZZZW
MANUFACTURERS CODE: 81349
NON-DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: JAN2N6784
SPEC/STD CONTROLLING DATA:
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472-1458-002
TRANSISTOR
NSN, MFG P/N
5961013370052
NSN
5961-01-337-0052
MFG
BOEING COMPANY THE DBA BOEING DIV DEFENSE SPACE & SECURITY - NETWORK & SPACE SYSTEMS
Description
(NON-CORE DATA) CHANNEL POLARITY AND CONTROL TYPE: P-CHANNEL INSULATED GATE TYPE
CURRENT RATING PER CHARACTERISTIC: -4.00 AMPERES MAXIMUM OFF-STATE CURRENT, PEAK
DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: JANTXV2N6851
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: FIELD EFFECT
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: TO-205AF
MANUFACTURERS CODE: 81349
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 150.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
NON-DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: MIL-PRF-19500/564
OVERALL DIAMETER: 0.335 INCHES MINIMUM AND 0.370 INCHES MAXIMUM
OVERALL LENGTH: 0.160 INCHES MINIMUM AND 0.180 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 25.0 WATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPEC/STD CONTROLLING DATA:
SPECIAL FEATURES: NUCLEAR HARDNESS CRITICAL ITEM; NO DRAWING TO DETERMINE IF ISC CODE 1 ITEM SHOULD ALSO BE NUCLE
Related Searches:
JANTXV2N6851
TRANSISTOR
NSN, MFG P/N
5961013370052
NSN
5961-01-337-0052
MFG
MILITARY SPECIFICATIONS PROMULGATED BY MILITARY DEPARTMENTS/AGENCIES UNDER AUTHORITY OF DEFENSE STANDARDIZATION MANUAL 4120 3-M
Description
(NON-CORE DATA) CHANNEL POLARITY AND CONTROL TYPE: P-CHANNEL INSULATED GATE TYPE
CURRENT RATING PER CHARACTERISTIC: -4.00 AMPERES MAXIMUM OFF-STATE CURRENT, PEAK
DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: JANTXV2N6851
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: FIELD EFFECT
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: TO-205AF
MANUFACTURERS CODE: 81349
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 150.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
NON-DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: MIL-PRF-19500/564
OVERALL DIAMETER: 0.335 INCHES MINIMUM AND 0.370 INCHES MAXIMUM
OVERALL LENGTH: 0.160 INCHES MINIMUM AND 0.180 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 25.0 WATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPEC/STD CONTROLLING DATA:
SPECIAL FEATURES: NUCLEAR HARDNESS CRITICAL ITEM; NO DRAWING TO DETERMINE IF ISC CODE 1 ITEM SHOULD ALSO BE NUCLE
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LT5817
TRANSISTOR
NSN, MFG P/N
5961013370053
NSN
5961-01-337-0053
MFG
TRW ELECTRONICS AND DEFENSE SECTOR RF DEVICES
Description
CURRENT RATING PER CHARACTERISTIC: 400.00 MILLIAMPERES MAXIMUM COLLECTOR CURRENT, DC
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: JUNCTION CONTACT
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: TO-117A
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 200.0 DEG CELSIUS JUNCTION
MOUNTING FACILITY QUANTITY: 1
MOUNTING METHOD: THREADED STUD
NOMINAL THREAD SIZE: 0.190 INCHES
OVERALL DIAMETER: 0.240 INCHES MINIMUM AND 0.380 INCHES MAXIMUM
OVERALL LENGTH: 1.280 INCHES NOMINAL
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: PNP
TERMINAL TYPE AND QUANTITY: 4 UNINSULATED WIRE LEAD
THREAD SERIES DESIGNATOR: UNC
TRANSFER RATIO: 20.0 MINIMUM STATIC FORWARD CURRENT TRANSFER RATIO, COMMON-EMITTER AND 60.0 MAXIMUM STATIC FORWARD CURRENT TRANSFER RATIO, COMMON-EMITTER
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 80.0 MINIMUM COLLECTOR TO BASE VOLTAGE/STATIC/EMITTER OPEN
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MRF549
TRANSISTOR
NSN, MFG P/N
5961013370053
NSN
5961-01-337-0053
MFG
FREESCALE SEMICONDUCTOR INC.
Description
CURRENT RATING PER CHARACTERISTIC: 400.00 MILLIAMPERES MAXIMUM COLLECTOR CURRENT, DC
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: JUNCTION CONTACT
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: TO-117A
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 200.0 DEG CELSIUS JUNCTION
MOUNTING FACILITY QUANTITY: 1
MOUNTING METHOD: THREADED STUD
NOMINAL THREAD SIZE: 0.190 INCHES
OVERALL DIAMETER: 0.240 INCHES MINIMUM AND 0.380 INCHES MAXIMUM
OVERALL LENGTH: 1.280 INCHES NOMINAL
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: PNP
TERMINAL TYPE AND QUANTITY: 4 UNINSULATED WIRE LEAD
THREAD SERIES DESIGNATOR: UNC
TRANSFER RATIO: 20.0 MINIMUM STATIC FORWARD CURRENT TRANSFER RATIO, COMMON-EMITTER AND 60.0 MAXIMUM STATIC FORWARD CURRENT TRANSFER RATIO, COMMON-EMITTER
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 80.0 MINIMUM COLLECTOR TO BASE VOLTAGE/STATIC/EMITTER OPEN
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131028-220
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961013370054
NSN
5961-01-337-0054
131028-220
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961013370054
NSN
5961-01-337-0054
MFG
LOCKHEED MARTIN CORPORATION DBA LOCKHEED MARTIN DIV MISSILES AND FIRE CONTROL - ARCHBALD
Description
CRITICALITY CODE JUSTIFICATION: ZZZY
DESIGN CONTROL REFERENCE: 131183-1
MANUFACTURERS CODE: 94271
REFERENCE NUMBER DIFFERENTIATING CHARACTERISTICS: MATERIAL WILL BE IN ACCORDANCE WITH SHIPS PARTS CONTROL CENTER ACTIVITY HX QUALITY CONTROL,MANUFACTURING AND TESTING SPECIFICATIONS
THE MANUFACTURERS DATA:
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7917020-12
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961013370056
NSN
5961-01-337-0056
7917020-12
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961013370056
NSN
5961-01-337-0056
MFG
LOCKHEED MARTIN CORPORATION DBA LOCKHEED MARTIN DIV MS2
Description
CAPACITANCE RATING IN PICOFARADS: 2.5 MAXIMUM
CURRENT RATING PER CHARACTERISTIC: 500.00 MILLIAMPERES MAXIMUM AVERAGE FORWARD CURRENT AVERAGED OVER A FULL 60-HZ CYCLE
FEATURES PROVIDED: HERMETICALLY SEALED CASE AND ELECTROSTATIC SENSITIVE
FUNCTION FOR WHICH DESIGNED: SWITCHING
III PRECIOUS MATERIAL: SILVER
III PRECIOUS MATERIAL AND LOCATION: END CAPS SURFACES SILVER
INCLOSURE MATERIAL: GLASS
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 175.0 DEG CELSIUS JUNCTION
MOUNTING METHOD: PRESS FIT
OVERALL HEIGHT: 0.070 INCHES MINIMUM AND 0.076 INCHES MAXIMUM
OVERALL LENGTH: 0.165 INCHES MINIMUM AND 0.185 INCHES MAXIMUM
OVERALL WIDTH: 0.070 INCHES MINIMUM AND 0.076 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 500.0 MILLIWATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 2 CASE
TEST DATA DOCUMENT: 90536-7917020 DRAWING
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 75.0 MAXIMUM REVERSE VOLTAGE, DC
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MT7263SM
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961013370056
NSN
5961-01-337-0056
MFG
MICROSEMI CORPORATION
Description
CAPACITANCE RATING IN PICOFARADS: 2.5 MAXIMUM
CURRENT RATING PER CHARACTERISTIC: 500.00 MILLIAMPERES MAXIMUM AVERAGE FORWARD CURRENT AVERAGED OVER A FULL 60-HZ CYCLE
FEATURES PROVIDED: HERMETICALLY SEALED CASE AND ELECTROSTATIC SENSITIVE
FUNCTION FOR WHICH DESIGNED: SWITCHING
III PRECIOUS MATERIAL: SILVER
III PRECIOUS MATERIAL AND LOCATION: END CAPS SURFACES SILVER
INCLOSURE MATERIAL: GLASS
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 175.0 DEG CELSIUS JUNCTION
MOUNTING METHOD: PRESS FIT
OVERALL HEIGHT: 0.070 INCHES MINIMUM AND 0.076 INCHES MAXIMUM
OVERALL LENGTH: 0.165 INCHES MINIMUM AND 0.185 INCHES MAXIMUM
OVERALL WIDTH: 0.070 INCHES MINIMUM AND 0.076 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 500.0 MILLIWATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 2 CASE
TEST DATA DOCUMENT: 90536-7917020 DRAWING
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 75.0 MAXIMUM REVERSE VOLTAGE, DC
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NDX1168
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961013370056
NSN
5961-01-337-0056
MFG
MICRO USPD INC
Description
CAPACITANCE RATING IN PICOFARADS: 2.5 MAXIMUM
CURRENT RATING PER CHARACTERISTIC: 500.00 MILLIAMPERES MAXIMUM AVERAGE FORWARD CURRENT AVERAGED OVER A FULL 60-HZ CYCLE
FEATURES PROVIDED: HERMETICALLY SEALED CASE AND ELECTROSTATIC SENSITIVE
FUNCTION FOR WHICH DESIGNED: SWITCHING
III PRECIOUS MATERIAL: SILVER
III PRECIOUS MATERIAL AND LOCATION: END CAPS SURFACES SILVER
INCLOSURE MATERIAL: GLASS
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 175.0 DEG CELSIUS JUNCTION
MOUNTING METHOD: PRESS FIT
OVERALL HEIGHT: 0.070 INCHES MINIMUM AND 0.076 INCHES MAXIMUM
OVERALL LENGTH: 0.165 INCHES MINIMUM AND 0.185 INCHES MAXIMUM
OVERALL WIDTH: 0.070 INCHES MINIMUM AND 0.076 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 500.0 MILLIWATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 2 CASE
TEST DATA DOCUMENT: 90536-7917020 DRAWING
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 75.0 MAXIMUM REVERSE VOLTAGE, DC
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1858-0077
SEMICONDUCTOR DEVICES,UNITIZED
NSN, MFG P/N
5961013370060
NSN
5961-01-337-0060
1858-0077
SEMICONDUCTOR DEVICES,UNITIZED
NSN, MFG P/N
5961013370060
NSN
5961-01-337-0060
MFG
AVAGO TECHNOLOGIES U.S. INC. DIV AVAGO TECHNOLOGIES
Description
COMPONENT NAME AND QUANTITY: 4 TRANSISTOR
III END ITEM IDENTIFICATION: 6625-01-259-1060 ANALYZER SPECTR
INCLOSURE MATERIAL: PLASTIC
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: TO-116
MOUNTING METHOD: TERMINAL
OVERALL HEIGHT: 0.180 INCHES NOMINAL
OVERALL LENGTH: 0.710 INCHES MINIMUM AND 0.780 INCHES MAXIMUM
OVERALL WIDTH: 0.240 INCHES MINIMUM AND 0.260 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON ALL TRANSISTOR
SPECIAL FEATURES: ALL TRANSISTOR JUNCTION PATTERN ARRANGEMENT: NPN
TERMINAL LENGTH: 0.145 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 14 PIN
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 60.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-EMITTER, BASE OPEN ALL SEMICONDUCTOR
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MPQ2222P
SEMICONDUCTOR DEVICES,UNITIZED
NSN, MFG P/N
5961013370060
NSN
5961-01-337-0060
MPQ2222P
SEMICONDUCTOR DEVICES,UNITIZED
NSN, MFG P/N
5961013370060
NSN
5961-01-337-0060
MFG
FREESCALE SEMICONDUCTOR INC.
Description
COMPONENT NAME AND QUANTITY: 4 TRANSISTOR
III END ITEM IDENTIFICATION: 6625-01-259-1060 ANALYZER SPECTR
INCLOSURE MATERIAL: PLASTIC
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: TO-116
MOUNTING METHOD: TERMINAL
OVERALL HEIGHT: 0.180 INCHES NOMINAL
OVERALL LENGTH: 0.710 INCHES MINIMUM AND 0.780 INCHES MAXIMUM
OVERALL WIDTH: 0.240 INCHES MINIMUM AND 0.260 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON ALL TRANSISTOR
SPECIAL FEATURES: ALL TRANSISTOR JUNCTION PATTERN ARRANGEMENT: NPN
TERMINAL LENGTH: 0.145 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 14 PIN
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 60.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-EMITTER, BASE OPEN ALL SEMICONDUCTOR
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SQ1205.01
SEMICONDUCTOR DEVICES,UNITIZED
NSN, MFG P/N
5961013370060
NSN
5961-01-337-0060
SQ1205.01
SEMICONDUCTOR DEVICES,UNITIZED
NSN, MFG P/N
5961013370060
NSN
5961-01-337-0060
MFG
NATIONAL SEMICONDUCTOR CORPORATION
Description
COMPONENT NAME AND QUANTITY: 4 TRANSISTOR
III END ITEM IDENTIFICATION: 6625-01-259-1060 ANALYZER SPECTR
INCLOSURE MATERIAL: PLASTIC
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: TO-116
MOUNTING METHOD: TERMINAL
OVERALL HEIGHT: 0.180 INCHES NOMINAL
OVERALL LENGTH: 0.710 INCHES MINIMUM AND 0.780 INCHES MAXIMUM
OVERALL WIDTH: 0.240 INCHES MINIMUM AND 0.260 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON ALL TRANSISTOR
SPECIAL FEATURES: ALL TRANSISTOR JUNCTION PATTERN ARRANGEMENT: NPN
TERMINAL LENGTH: 0.145 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 14 PIN
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 60.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-EMITTER, BASE OPEN ALL SEMICONDUCTOR
Related Searches:
1853-0635
SEMICONDUCTOR DEVICES,UNITIZED
NSN, MFG P/N
5961013370061
NSN
5961-01-337-0061
1853-0635
SEMICONDUCTOR DEVICES,UNITIZED
NSN, MFG P/N
5961013370061
NSN
5961-01-337-0061
MFG
AVAGO TECHNOLOGIES U.S. INC. DIV AVAGO TECHNOLOGIES
Description
COMPONENT NAME AND QUANTITY: 2 TRANSISTOR
CRITICALITY CODE JUSTIFICATION: FEAT
ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE: COLLECTOR
FEATURES PROVIDED: HERMETICALLY SEALED CASE
III END ITEM IDENTIFICATION: 6625-01-259-1060 ANALYZER SPECTR; FORRESTAL CLASS CV; AVENGER CLASS MCM; TICONDEROGA CLASS CG (47); OLIVER PERRY CLASS FFG; SUPPLY CLASS AOE; SPRUANCE CLASS DD (963); WHIDBEY ISLAND CALSS LSD; KIDD CLASS DDG; ARLEIGH BURKE CLASS DDG; NIMITZ CLASS CVN
INCLOSURE MATERIAL: METAL
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: TO-71
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.185 INCHES NOMINAL
OVERALL LENGTH: 0.190 INCHES NOMINAL
POWER RATING PER CHARACTERISTIC: 400.0 MILLIWATTS MAXIMUM TOTAL POWER DISSIPATION ALL TRANSISTOR
SEMICONDUCTOR MATERIAL: SILICON ALL TRANSISTOR
SPECIAL FEATURES: WEAPON SYSTEM ESSENTIAL; ALL TRANSISTOR JUNCTION PATTERN ARRANGEMENT: PNP
TERMINAL CIRCLE DIAMETER: 0.100 INCHES NOMINAL
TERMINAL LENGTH: 0.500
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IT130-T071
SEMICONDUCTOR DEVICES,UNITIZED
NSN, MFG P/N
5961013370061
NSN
5961-01-337-0061
IT130-T071
SEMICONDUCTOR DEVICES,UNITIZED
NSN, MFG P/N
5961013370061
NSN
5961-01-337-0061
MFG
HEWLETT PACKARD CO
Description
COMPONENT NAME AND QUANTITY: 2 TRANSISTOR
CRITICALITY CODE JUSTIFICATION: FEAT
ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE: COLLECTOR
FEATURES PROVIDED: HERMETICALLY SEALED CASE
III END ITEM IDENTIFICATION: 6625-01-259-1060 ANALYZER SPECTR; FORRESTAL CLASS CV; AVENGER CLASS MCM; TICONDEROGA CLASS CG (47); OLIVER PERRY CLASS FFG; SUPPLY CLASS AOE; SPRUANCE CLASS DD (963); WHIDBEY ISLAND CALSS LSD; KIDD CLASS DDG; ARLEIGH BURKE CLASS DDG; NIMITZ CLASS CVN
INCLOSURE MATERIAL: METAL
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: TO-71
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.185 INCHES NOMINAL
OVERALL LENGTH: 0.190 INCHES NOMINAL
POWER RATING PER CHARACTERISTIC: 400.0 MILLIWATTS MAXIMUM TOTAL POWER DISSIPATION ALL TRANSISTOR
SEMICONDUCTOR MATERIAL: SILICON ALL TRANSISTOR
SPECIAL FEATURES: WEAPON SYSTEM ESSENTIAL; ALL TRANSISTOR JUNCTION PATTERN ARRANGEMENT: PNP
TERMINAL CIRCLE DIAMETER: 0.100 INCHES NOMINAL
TERMINAL LENGTH: 0.500
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MP352-52
SEMICONDUCTOR DEVICES,UNITIZED
NSN, MFG P/N
5961013370061
NSN
5961-01-337-0061
MP352-52
SEMICONDUCTOR DEVICES,UNITIZED
NSN, MFG P/N
5961013370061
NSN
5961-01-337-0061
MFG
MICRO POWER SYSTEMS INC
Description
COMPONENT NAME AND QUANTITY: 2 TRANSISTOR
CRITICALITY CODE JUSTIFICATION: FEAT
ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE: COLLECTOR
FEATURES PROVIDED: HERMETICALLY SEALED CASE
III END ITEM IDENTIFICATION: 6625-01-259-1060 ANALYZER SPECTR; FORRESTAL CLASS CV; AVENGER CLASS MCM; TICONDEROGA CLASS CG (47); OLIVER PERRY CLASS FFG; SUPPLY CLASS AOE; SPRUANCE CLASS DD (963); WHIDBEY ISLAND CALSS LSD; KIDD CLASS DDG; ARLEIGH BURKE CLASS DDG; NIMITZ CLASS CVN
INCLOSURE MATERIAL: METAL
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: TO-71
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.185 INCHES NOMINAL
OVERALL LENGTH: 0.190 INCHES NOMINAL
POWER RATING PER CHARACTERISTIC: 400.0 MILLIWATTS MAXIMUM TOTAL POWER DISSIPATION ALL TRANSISTOR
SEMICONDUCTOR MATERIAL: SILICON ALL TRANSISTOR
SPECIAL FEATURES: WEAPON SYSTEM ESSENTIAL; ALL TRANSISTOR JUNCTION PATTERN ARRANGEMENT: PNP
TERMINAL CIRCLE DIAMETER: 0.100 INCHES NOMINAL
TERMINAL LENGTH: 0.500
