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5961-01-343-2440
20 Products
204-0186-010
TRANSISTOR
NSN, MFG P/N
5961013432440
NSN
5961-01-343-2440
MFG
ROCKWELL COLLINS INC. DBA GOVERNMENT SYSTEMS DIV GOVERNMENT SYSTEMS
Description
(NON-CORE DATA) CHANNEL POLARITY AND CONTROL TYPE: N-CHANNEL INSULATED GATE TYPE
CURRENT RATING PER CHARACTERISTIC: 13.00 AMPERES MAXIMUM DRAIN CURRENT
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: FIELD EFFECT
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: TO-61
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 150.0 DEG CELSIUS JUNCTION
MOUNTING FACILITY QUANTITY: 1
MOUNTING METHOD: THREADED STUD
NOMINAL THREAD SIZE: 0.250 INCHES
OVERALL LENGTH: 1.330 INCHES MAXIMUM
OVERALL WIDTH ACROSS FLATS: 0.687 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 150.0 WATTS MAXIMUM TOTAL DEVICE DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 3 TAB, SOLDER LUG
TEST DATA DOCUMENT: 95105-204-0186 DRAWING
THREAD SERIES DESIGNATOR: UNF
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 500.0 MAXIMUM DRAIN TO GATE VOLTAGE AND 500.0 MAXIMUM DRAIN TO SOURCE VOLTAGE AND 20.0 MAXIMUM FORWARD VOLTAGE, PEAK
Related Searches:
GZ44830A
SEMICONDUCTOR DEVICES,UNITIZED
NSN, MFG P/N
5961013430513
NSN
5961-01-343-0513
GZ44830A
SEMICONDUCTOR DEVICES,UNITIZED
NSN, MFG P/N
5961013430513
NSN
5961-01-343-0513
MFG
PROTEK DEVICES LP DBA PROTEK DEVICES
Description
COMPONENT NAME AND QUANTITY: 8 SEMICONDUCTOR DEVICE DIODE
FEATURES PROVIDED: HERMETICALLY SEALED CASE
FUNCTION FOR WHICH DESIGNED: TRANSIENT SUPPRESSOR
INCLOSURE MATERIAL: CERAMIC
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 100.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
OVERALL HEIGHT: 0.620 INCHES NOMINAL
OVERALL LENGTH: 0.750 INCHES NOMINAL
OVERALL WIDTH: 0.750 INCHES NOMINAL
SEMICONDUCTOR MATERIAL: SILICON ALL SEMICONDUCTOR DEVICE DIODE
SPECIAL FEATURES: ALL SEMICONDUCTOR DEVICE DIODE JUNCTION PATTERN ARRANGEMENT: PN
TERMINAL LENGTH: 0.151 INCHES MINIMUM AND 0.161 INCHES MAXIMUM
TERMINAL TYPE AND QUANTITY: 8 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 7.0 MAXIMUM NOMINAL REGULATOR VOLTAGE ALL SEMICONDUCTOR DEVICE DIODE
Related Searches:
94-7235
TRANSISTOR
NSN, MFG P/N
5961013430870
NSN
5961-01-343-0870
MFG
INTERNATIONAL RECTIFIER CORP ORATION USE CAGE CODE 81483 FOR CATALOGING.
Description
(NON-CORE DATA) CHANNEL POLARITY AND CONTROL TYPE: N-CHANNEL INSULATED GATE TYPE
CRITICALITY CODE JUSTIFICATION: FEAT
CURRENT RATING PER CHARACTERISTIC: 12.00 AMPERES MAXIMUM DRAIN CURRENT AND 12.00 AMPERES MAXIMUM DETECTOR SIGNAL CURRENT
ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE: DRAIN
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: FIELD EFFECT
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: TO-204AA
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 150.0 DEG CELSIUS JUNCTION
MOUNTING FACILITY QUANTITY: 2
MOUNTING METHOD: UNTHREADED HOLE
OVERALL HEIGHT: 0.300 INCHES NOMINAL
OVERALL LENGTH: 1.573 INCHES MAXIMUM
OVERALL WIDTH: 1.050 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 150.0 WATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: NUCLEAR HARDNESS CRITICAL ITEM
TERMINAL TYPE AND QUANTITY: 2 PIN AND 1 CASE
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 500.0 MAXIMUM DRAIN TO SOURCE VOLT
Related Searches:
G371683-1
TRANSISTOR
NSN, MFG P/N
5961013430870
NSN
5961-01-343-0870
MFG
RAYTHEON TECHNICAL SERVICES COMPANY LLC DBA RAYTHEON
Description
(NON-CORE DATA) CHANNEL POLARITY AND CONTROL TYPE: N-CHANNEL INSULATED GATE TYPE
CRITICALITY CODE JUSTIFICATION: FEAT
CURRENT RATING PER CHARACTERISTIC: 12.00 AMPERES MAXIMUM DRAIN CURRENT AND 12.00 AMPERES MAXIMUM DETECTOR SIGNAL CURRENT
ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE: DRAIN
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: FIELD EFFECT
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: TO-204AA
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 150.0 DEG CELSIUS JUNCTION
MOUNTING FACILITY QUANTITY: 2
MOUNTING METHOD: UNTHREADED HOLE
OVERALL HEIGHT: 0.300 INCHES NOMINAL
OVERALL LENGTH: 1.573 INCHES MAXIMUM
OVERALL WIDTH: 1.050 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 150.0 WATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: NUCLEAR HARDNESS CRITICAL ITEM
TERMINAL TYPE AND QUANTITY: 2 PIN AND 1 CASE
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 500.0 MAXIMUM DRAIN TO SOURCE VOLT
Related Searches:
JANTX2N6770
TRANSISTOR
NSN, MFG P/N
5961013430870
NSN
5961-01-343-0870
MFG
MILITARY SPECIFICATIONS PROMULGATED BY MILITARY DEPARTMENTS/AGENCIES UNDER AUTHORITY OF DEFENSE STANDARDIZATION MANUAL 4120 3-M
Description
(NON-CORE DATA) CHANNEL POLARITY AND CONTROL TYPE: N-CHANNEL INSULATED GATE TYPE
CRITICALITY CODE JUSTIFICATION: FEAT
CURRENT RATING PER CHARACTERISTIC: 12.00 AMPERES MAXIMUM DRAIN CURRENT AND 12.00 AMPERES MAXIMUM DETECTOR SIGNAL CURRENT
ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE: DRAIN
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: FIELD EFFECT
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: TO-204AA
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 150.0 DEG CELSIUS JUNCTION
MOUNTING FACILITY QUANTITY: 2
MOUNTING METHOD: UNTHREADED HOLE
OVERALL HEIGHT: 0.300 INCHES NOMINAL
OVERALL LENGTH: 1.573 INCHES MAXIMUM
OVERALL WIDTH: 1.050 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 150.0 WATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: NUCLEAR HARDNESS CRITICAL ITEM
TERMINAL TYPE AND QUANTITY: 2 PIN AND 1 CASE
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 500.0 MAXIMUM DRAIN TO SOURCE VOLT
Related Searches:
NHG371683-1
TRANSISTOR
NSN, MFG P/N
5961013430870
NSN
5961-01-343-0870
MFG
DLA LAND AND MARITIME
Description
(NON-CORE DATA) CHANNEL POLARITY AND CONTROL TYPE: N-CHANNEL INSULATED GATE TYPE
CRITICALITY CODE JUSTIFICATION: FEAT
CURRENT RATING PER CHARACTERISTIC: 12.00 AMPERES MAXIMUM DRAIN CURRENT AND 12.00 AMPERES MAXIMUM DETECTOR SIGNAL CURRENT
ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE: DRAIN
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: FIELD EFFECT
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: TO-204AA
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 150.0 DEG CELSIUS JUNCTION
MOUNTING FACILITY QUANTITY: 2
MOUNTING METHOD: UNTHREADED HOLE
OVERALL HEIGHT: 0.300 INCHES NOMINAL
OVERALL LENGTH: 1.573 INCHES MAXIMUM
OVERALL WIDTH: 1.050 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 150.0 WATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: NUCLEAR HARDNESS CRITICAL ITEM
TERMINAL TYPE AND QUANTITY: 2 PIN AND 1 CASE
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 500.0 MAXIMUM DRAIN TO SOURCE VOLT
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AC7-B1-07
SEMICONDUCTOR DEVICES,UNITIZED
NSN, MFG P/N
5961013432307
NSN
5961-01-343-2307
AC7-B1-07
SEMICONDUCTOR DEVICES,UNITIZED
NSN, MFG P/N
5961013432307
NSN
5961-01-343-2307
MFG
LA MARCHE MFG. CO. DBA LA MARCHE
Description
COMPONENT NAME AND QUANTITY: 2 TRANSISTOR
Related Searches:
204-0187-020
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961013432308
NSN
5961-01-343-2308
204-0187-020
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961013432308
NSN
5961-01-343-2308
MFG
ROCKWELL COLLINS INC. DBA GOVERNMENT SYSTEMS DIV GOVERNMENT SYSTEMS
Description
SEMICONDUCTOR DEVICE,DIODE
Related Searches:
204-0088-010
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961013432309
NSN
5961-01-343-2309
204-0088-010
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961013432309
NSN
5961-01-343-2309
MFG
ROCKWELL COLLINS INC. DBA GOVERNMENT SYSTEMS DIV GOVERNMENT SYSTEMS
Description
SEMICONDUCTOR DEVICE,DIODE
Related Searches:
204-0109-020
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961013432311
NSN
5961-01-343-2311
204-0109-020
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961013432311
NSN
5961-01-343-2311
MFG
ROCKWELL COLLINS INC. DBA GOVERNMENT SYSTEMS DIV GOVERNMENT SYSTEMS
Description
SEMICONDUCTOR DEVICE,DIODE
Related Searches:
RC204-0109-020
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961013432311
NSN
5961-01-343-2311
RC204-0109-020
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961013432311
NSN
5961-01-343-2311
MFG
ROCKWELL COLLINS INC. DIV GOVERNMENT SYSTEMS - DALLAS
Description
SEMICONDUCTOR DEVICE,DIODE
Related Searches:
1-199
SEMICONDUCTOR DEVICES,UNITIZED
NSN, MFG P/N
5961013432327
NSN
5961-01-343-2327
MFG
MOTOROLA INC MOTOROLA AUTOMOTIVE ELECTRONICS
Description
SEMICONDUCTOR DEVICES,UNITIZED
Related Searches:
101-199
SEMICONDUCTOR DEVICES,UNITIZED
NSN, MFG P/N
5961013432327
NSN
5961-01-343-2327
101-199
SEMICONDUCTOR DEVICES,UNITIZED
NSN, MFG P/N
5961013432327
NSN
5961-01-343-2327
MFG
PRESTOLITE ELECTRIC INCORPORATED
Description
SEMICONDUCTOR DEVICES,UNITIZED
Related Searches:
204-0109-010
TRANSISTOR
NSN, MFG P/N
5961013432436
NSN
5961-01-343-2436
MFG
ROCKWELL COLLINS INC. DBA GOVERNMENT SYSTEMS DIV GOVERNMENT SYSTEMS
Description
FEATURES PROVIDED: ELECTROSTATIC SENSITIVE
Related Searches:
204-0108-010
TRANSISTOR
NSN, MFG P/N
5961013432437
NSN
5961-01-343-2437
MFG
ROCKWELL COLLINS INC. DBA GOVERNMENT SYSTEMS DIV GOVERNMENT SYSTEMS
Description
FEATURES PROVIDED: ELECTROSTATIC SENSITIVE
Related Searches:
204-0007-001
TRANSISTOR
NSN, MFG P/N
5961013432438
NSN
5961-01-343-2438
MFG
ROCKWELL COLLINS INC. DBA GOVERNMENT SYSTEMS DIV GOVERNMENT SYSTEMS
Description
FEATURES PROVIDED: ELECTROSTATIC SENSITIVE
Related Searches:
632042-02
TRANSISTOR
NSN, MFG P/N
5961013432439
NSN
5961-01-343-2439
MFG
BAE SYSTEMS CONTROLS INC
Description
(NON-CORE DATA) CHANNEL POLARITY AND CONTROL TYPE: N-CHANNEL INSULATED GATE TYPE
CURRENT RATING PER CHARACTERISTIC: 4.80 AMPERES MAXIMUM DRAIN CURRENT
ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE: DRAIN
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: FIELD EFFECT
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 150.0 DEG CELSIUS JUNCTION
MOUNTING FACILITY QUANTITY: 2
MOUNTING METHOD: UNTHREADED HOLE
OVERALL HEIGHT: 0.259 INCHES MINIMUM AND 0.268 INCHES MAXIMUM
OVERALL LENGTH: 1.550 INCHES MAXIMUM
OVERALL WIDTH: 0.978 INCHES MINIMUM AND 0.995 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 125.0 WATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 2 PIN AND 1 CASE
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: -20.0 MINIMUM GATE TO SOURCE VOLTAGE AND 20.0 MAXIMUM GATE TO SOURCE VOLTAGE
Related Searches:
8879800038-1
TRANSISTOR
NSN, MFG P/N
5961013432439
NSN
5961-01-343-2439
MFG
NAVCOM DEFENSE ELECTRONICS INC.
Description
(NON-CORE DATA) CHANNEL POLARITY AND CONTROL TYPE: N-CHANNEL INSULATED GATE TYPE
CURRENT RATING PER CHARACTERISTIC: 4.80 AMPERES MAXIMUM DRAIN CURRENT
ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE: DRAIN
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: FIELD EFFECT
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 150.0 DEG CELSIUS JUNCTION
MOUNTING FACILITY QUANTITY: 2
MOUNTING METHOD: UNTHREADED HOLE
OVERALL HEIGHT: 0.259 INCHES MINIMUM AND 0.268 INCHES MAXIMUM
OVERALL LENGTH: 1.550 INCHES MAXIMUM
OVERALL WIDTH: 0.978 INCHES MINIMUM AND 0.995 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 125.0 WATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 2 PIN AND 1 CASE
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: -20.0 MINIMUM GATE TO SOURCE VOLTAGE AND 20.0 MAXIMUM GATE TO SOURCE VOLTAGE
Related Searches:
94-7749
TRANSISTOR
NSN, MFG P/N
5961013432439
NSN
5961-01-343-2439
MFG
INTERNATIONAL RECTIFIER CORP ORATION USE CAGE CODE 81483 FOR CATALOGING.
Description
(NON-CORE DATA) CHANNEL POLARITY AND CONTROL TYPE: N-CHANNEL INSULATED GATE TYPE
CURRENT RATING PER CHARACTERISTIC: 4.80 AMPERES MAXIMUM DRAIN CURRENT
ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE: DRAIN
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: FIELD EFFECT
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 150.0 DEG CELSIUS JUNCTION
MOUNTING FACILITY QUANTITY: 2
MOUNTING METHOD: UNTHREADED HOLE
OVERALL HEIGHT: 0.259 INCHES MINIMUM AND 0.268 INCHES MAXIMUM
OVERALL LENGTH: 1.550 INCHES MAXIMUM
OVERALL WIDTH: 0.978 INCHES MINIMUM AND 0.995 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 125.0 WATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 2 PIN AND 1 CASE
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: -20.0 MINIMUM GATE TO SOURCE VOLTAGE AND 20.0 MAXIMUM GATE TO SOURCE VOLTAGE
Related Searches:
IXTM4N80A/JX
TRANSISTOR
NSN, MFG P/N
5961013432439
NSN
5961-01-343-2439
MFG
IXYS CORPORATION
Description
(NON-CORE DATA) CHANNEL POLARITY AND CONTROL TYPE: N-CHANNEL INSULATED GATE TYPE
CURRENT RATING PER CHARACTERISTIC: 4.80 AMPERES MAXIMUM DRAIN CURRENT
ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE: DRAIN
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: FIELD EFFECT
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 150.0 DEG CELSIUS JUNCTION
MOUNTING FACILITY QUANTITY: 2
MOUNTING METHOD: UNTHREADED HOLE
OVERALL HEIGHT: 0.259 INCHES MINIMUM AND 0.268 INCHES MAXIMUM
OVERALL LENGTH: 1.550 INCHES MAXIMUM
OVERALL WIDTH: 0.978 INCHES MINIMUM AND 0.995 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 125.0 WATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 2 PIN AND 1 CASE
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: -20.0 MINIMUM GATE TO SOURCE VOLTAGE AND 20.0 MAXIMUM GATE TO SOURCE VOLTAGE
