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5961-01-348-0963
20 Products
FBL-00-256
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961013480963
NSN
5961-01-348-0963
FBL-00-256
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961013480963
NSN
5961-01-348-0963
MFG
VEECO INSTRUMENTS INC LAMBDA DIV
Description
CURRENT RATING PER CHARACTERISTIC: 8.00 AMPERES MAXIMUM PEAK POINT CURRENT
FUNCTION FOR WHICH DESIGNED: RECTIFIER
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 1000.0 NOMINAL REVERSE VOLTAGE, PEAK
Related Searches:
11443347
SEMICONDUCTOR DEVICE,THYRISTOR
NSN, MFG P/N
5961013477854
NSN
5961-01-347-7854
11443347
SEMICONDUCTOR DEVICE,THYRISTOR
NSN, MFG P/N
5961013477854
NSN
5961-01-347-7854
MFG
U S ARMY AVIATION AND MISSILE COMMAND
Description
DESIGN CONTROL REFERENCE: 11443347
INCLOSURE MATERIAL: METAL
MANUFACTURERS CODE: 18876
OVERALL DIAMETER: 0.544 INCHES NOMINAL
OVERALL LENGTH: 1.615 INCHES MINIMUM AND 1.646 INCHES MAXIMUM
THE MANUFACTURERS DATA:
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 200.0 MINIMUM REPETITIVE PEAK OFF-STATE VOLTAGE AND 300.0 MAXIMUM REPETITIVE PEAK OFF-STATE VOLTAGE
Related Searches:
200465-3
TRANSISTOR
NSN, MFG P/N
5961013478506
NSN
5961-01-347-8506
MFG
ITT CORPORATION DBA ITT GILFILLAN
Description
(NON-CORE DATA) CHANNEL POLARITY AND CONTROL TYPE: N-CHANNEL JUNCTION TYPE
CURRENT RATING PER CHARACTERISTIC: 12.00 AMPERES MAXIMUM DRAIN CURRENT
ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE: DRAIN
FEATURES PROVIDED: HERMETICALLY SEALED CASE
FUNCTION FOR WHICH DESIGNED: SWITCHING
III END ITEM IDENTIFICATION: RADAR, SEARCH, AN/SPS-48; EMORY S. LAND CLASS AS; NIMITZ CLASS CVN; KIDD CLASS DDG; TARAWA CLASS LHA; 2M/ATE MICROMINIAUTURE AUTOMATIC TEST EQUIPMENT; VIRGINIA CLASS CGN (41); WASP CLASS LHD; FORRESTAL CLASS CV
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: FIELD EFFECT
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: TO-204AE
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 150.0 DEG CELSIUS AMBIENT AIR
MOUNTING FACILITY QUANTITY: 2
MOUNTING METHOD: UNTHREADED HOLE
OVERALL HEIGHT: 0.562 INCHES MINIMUM AND 0.860 INCHES MAXIMUM
OVERALL LENGTH: 1.573 INCHES MAXIMUM
OVERALL WIDTH: 1.050 INCHES MAXIMUM
POWER RATING PER CHARACTERIST
Related Searches:
JANTX2N6770
TRANSISTOR
NSN, MFG P/N
5961013478506
NSN
5961-01-347-8506
MFG
INTERNATIONAL RECTIFIER CORPORATION DIV HI-REL
Description
(NON-CORE DATA) CHANNEL POLARITY AND CONTROL TYPE: N-CHANNEL JUNCTION TYPE
CURRENT RATING PER CHARACTERISTIC: 12.00 AMPERES MAXIMUM DRAIN CURRENT
ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE: DRAIN
FEATURES PROVIDED: HERMETICALLY SEALED CASE
FUNCTION FOR WHICH DESIGNED: SWITCHING
III END ITEM IDENTIFICATION: RADAR, SEARCH, AN/SPS-48; EMORY S. LAND CLASS AS; NIMITZ CLASS CVN; KIDD CLASS DDG; TARAWA CLASS LHA; 2M/ATE MICROMINIAUTURE AUTOMATIC TEST EQUIPMENT; VIRGINIA CLASS CGN (41); WASP CLASS LHD; FORRESTAL CLASS CV
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: FIELD EFFECT
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: TO-204AE
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 150.0 DEG CELSIUS AMBIENT AIR
MOUNTING FACILITY QUANTITY: 2
MOUNTING METHOD: UNTHREADED HOLE
OVERALL HEIGHT: 0.562 INCHES MINIMUM AND 0.860 INCHES MAXIMUM
OVERALL LENGTH: 1.573 INCHES MAXIMUM
OVERALL WIDTH: 1.050 INCHES MAXIMUM
POWER RATING PER CHARACTERIST
Related Searches:
P6KE7.5C
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961013478509
NSN
5961-01-347-8509
MFG
PROTEK DEVICES LP DBA PROTEK DEVICES
Description
CURRENT RATING PER CHARACTERISTIC: 10.00 MILLIAMPERES MAXIMUM REVERSE CURRENT, DC
FUNCTION FOR WHICH DESIGNED: TRANSIENT SUPPRESSOR
INCLOSURE MATERIAL: PLASTIC
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 175.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.145 INCHES MAXIMUM
OVERALL LENGTH: 0.350 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 600.0 WATTS MAXIMUM REVERSE POWER DISSIPATION, DC
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL LENGTH: 1.000 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 6.05 MAXIMUM REVERSE VOLTAGE, INSTANTANEOUS AND 8.25 MAXIMUM BREAKDOWN VOLTAGE, DC AND 11.7 MAXIMUM COLLECTOR SUPPLY VOLTAGE
Related Searches:
0N370557-1
SEMICONDUCTOR DEVICES,UNITIZED
NSN, MFG P/N
5961013478868
NSN
5961-01-347-8868
0N370557-1
SEMICONDUCTOR DEVICES,UNITIZED
NSN, MFG P/N
5961013478868
NSN
5961-01-347-8868
MFG
NATIONAL SECURITY AGENCY
Description
(NON-CORE DATA) CHANNEL POLARITY AND CONTROL TYPE: N-CHANNEL JUNCTION TYPE P-CHANNEL INSULATED GATE TYPE
COMPONENT NAME AND QUANTITY: 4 TRANSISTOR
CURRENT RATING PER CHARACTERISTIC: 1.00 MILLIAMPERES MINIMUM DRAIN CURRENT AND 200.00 MILLIAMPERES MAXIMUM DRAIN CURRENT 1ST TRANSISTOR 1.00 MILLIAMPERES MINIMUM DRAIN CURRENT AND 200.00 MILLIAMPERES MAXIMUM COLLECTOR CURRENT, DC 2ND TRANSISTOR
FEATURES PROVIDED: HERMETICALLY SEALED CASE AND ELECTROSTATIC SENSITIVE
III END ITEM IDENTIFICATION: TSEC/KG-194
INCLOSURE MATERIAL: METAL
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 150.0 DEG CELSIUS JUNCTION
MOUNTING METHOD: TERMINAL
OVERALL HEIGHT: 0.200 INCHES MAXIMUM
OVERALL LENGTH: 0.640 INCHES MINIMUM AND 0.786 INCHES MAXIMUM
OVERALL WIDTH: 0.275 INCHES MINIMUM AND 0.310 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 2.0 WATTS MAXIMUM TOTAL DEVICE DISSIPATION ALL TRANSISTOR
SEMICONDUCTOR MATERIAL: SILICON ALL TRANSISTOR
SPECIFICATION/STANDARD DATA: 98230-0N370557 MANUFACTURERS
Related Searches:
VQ5028
SEMICONDUCTOR DEVICES,UNITIZED
NSN, MFG P/N
5961013478868
NSN
5961-01-347-8868
VQ5028
SEMICONDUCTOR DEVICES,UNITIZED
NSN, MFG P/N
5961013478868
NSN
5961-01-347-8868
MFG
SILICONIX INCORPORATED D IV SILICONIX
Description
(NON-CORE DATA) CHANNEL POLARITY AND CONTROL TYPE: N-CHANNEL JUNCTION TYPE P-CHANNEL INSULATED GATE TYPE
COMPONENT NAME AND QUANTITY: 4 TRANSISTOR
CURRENT RATING PER CHARACTERISTIC: 1.00 MILLIAMPERES MINIMUM DRAIN CURRENT AND 200.00 MILLIAMPERES MAXIMUM DRAIN CURRENT 1ST TRANSISTOR 1.00 MILLIAMPERES MINIMUM DRAIN CURRENT AND 200.00 MILLIAMPERES MAXIMUM COLLECTOR CURRENT, DC 2ND TRANSISTOR
FEATURES PROVIDED: HERMETICALLY SEALED CASE AND ELECTROSTATIC SENSITIVE
III END ITEM IDENTIFICATION: TSEC/KG-194
INCLOSURE MATERIAL: METAL
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 150.0 DEG CELSIUS JUNCTION
MOUNTING METHOD: TERMINAL
OVERALL HEIGHT: 0.200 INCHES MAXIMUM
OVERALL LENGTH: 0.640 INCHES MINIMUM AND 0.786 INCHES MAXIMUM
OVERALL WIDTH: 0.275 INCHES MINIMUM AND 0.310 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 2.0 WATTS MAXIMUM TOTAL DEVICE DISSIPATION ALL TRANSISTOR
SEMICONDUCTOR MATERIAL: SILICON ALL TRANSISTOR
SPECIFICATION/STANDARD DATA: 98230-0N370557 MANUFACTURERS
Related Searches:
741C2040-05-120
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961013479308
NSN
5961-01-347-9308
741C2040-05-120
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961013479308
NSN
5961-01-347-9308
MFG
GE AVIATION SYSTEMS LLC DBA GE AVIATION DIV INFORMATION SYSTEMS - GERMANTOWN
Description
DESIGN CONTROL REFERENCE: 741C2040-05-120
III END ITEM IDENTIFICATION: ACFT MODEL F14
MANUFACTURERS CODE: 86360
THE MANUFACTURERS DATA:
Related Searches:
143117066-01
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961013479310
NSN
5961-01-347-9310
143117066-01
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961013479310
NSN
5961-01-347-9310
MFG
EATON CORPORATION
Description
SEMICONDUCTOR DEVICE,DIODE
Related Searches:
80-7425
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961013479310
NSN
5961-01-347-9310
MFG
INTERNATIONAL RECTIFIER CORP ORATION USE CAGE CODE 81483 FOR CATALOGING.
Description
SEMICONDUCTOR DEVICE,DIODE
Related Searches:
ECG100
TRANSISTOR
NSN, MFG P/N
5961013479597
NSN
5961-01-347-9597
MFG
PHILIPS ECG INC DIV OF NORTH AMERICAN PHILIPS CORP
Description
CURRENT RATING PER CHARACTERISTIC: 0.30 AMPERES NOMINAL COLLECTOR CURRENT, INSTANTANEOUS
POWER RATING PER CHARACTERISTIC: 0.150 WATTS MAXIMUM COLLECTOR POWER DISSIPATION
SPECIAL FEATURES: FREQUENCY IN MHZ IS 5
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 25.0 NOMINAL BASE SUPPLY VOLTAGE AND 30.0 NOMINAL EMITTER SUPPLY VOLTAGE
Related Searches:
980710-1
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961013479747
NSN
5961-01-347-9747
MFG
RAYTHEON TECHNICAL SERVICES COMPANY LLC DBA RAYTHEON
Description
SEMICONDUCTOR DEVICE,DIODE
Related Searches:
94-7115
TRANSISTOR
NSN, MFG P/N
5961013480073
NSN
5961-01-348-0073
MFG
INTERNATIONAL RECTIFIER CORP ORATION USE CAGE CODE 81483 FOR CATALOGING.
Description
(NON-CORE DATA) CHANNEL POLARITY AND CONTROL TYPE: P-CHANNEL INSULATED GATE TYPE
CURRENT RATING PER CHARACTERISTIC: -16.00 AMPERES MAXIMUM OFF-STATE CURRENT, PEAK AND -4.00 AMPERES MAXIMUM DRAIN CURRENT
FEATURES PROVIDED: HERMETICALLY SEALED CASE AND ELECTROSTATIC SENSITIVE
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: FIELD EFFECT
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 150.0 DEG CELSIUS JUNCTION
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.350 INCHES MINIMUM AND 0.370 INCHES MAXIMUM
OVERALL LENGTH: 0.160 INCHES MINIMUM AND 0.260 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 20.0 WATTS MAXIMUM TOTAL DEVICE DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL CIRCLE DIAMETER: 0.190 INCHES MINIMUM AND 0.210 INCHES MAXIMUM
TERMINAL LENGTH: 0.500 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 3 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: -100.0 MAXIMUM DRAIN TO SOURCE VOLTAGE AND -100.0 MAXIMUM DRAIN TO GATE VOLTAGE AND 20.0 MAXIMUM GATE TO
Related Searches:
TR149-01A
TRANSISTOR
NSN, MFG P/N
5961013480073
NSN
5961-01-348-0073
MFG
ELDEC CORPORATION DBA CRANE AEROSPACE & ELECTRONIC
Description
(NON-CORE DATA) CHANNEL POLARITY AND CONTROL TYPE: P-CHANNEL INSULATED GATE TYPE
CURRENT RATING PER CHARACTERISTIC: -16.00 AMPERES MAXIMUM OFF-STATE CURRENT, PEAK AND -4.00 AMPERES MAXIMUM DRAIN CURRENT
FEATURES PROVIDED: HERMETICALLY SEALED CASE AND ELECTROSTATIC SENSITIVE
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: FIELD EFFECT
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 150.0 DEG CELSIUS JUNCTION
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.350 INCHES MINIMUM AND 0.370 INCHES MAXIMUM
OVERALL LENGTH: 0.160 INCHES MINIMUM AND 0.260 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 20.0 WATTS MAXIMUM TOTAL DEVICE DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL CIRCLE DIAMETER: 0.190 INCHES MINIMUM AND 0.210 INCHES MAXIMUM
TERMINAL LENGTH: 0.500 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 3 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: -100.0 MAXIMUM DRAIN TO SOURCE VOLTAGE AND -100.0 MAXIMUM DRAIN TO GATE VOLTAGE AND 20.0 MAXIMUM GATE TO
Related Searches:
0N444082-1
TRANSISTOR
NSN, MFG P/N
5961013480306
NSN
5961-01-348-0306
MFG
NATIONAL SECURITY AGENCY
Description
TRANSISTOR
Related Searches:
78015
TRANSISTOR
NSN, MFG P/N
5961013480306
NSN
5961-01-348-0306
MFG
GENERAL ELECTRIC CO SEMI-CONDUCTOR PRODUCTS DEPT
Description
TRANSISTOR
Related Searches:
4200938
SEMICONDUCTOR DEVICE ASSEMBLY
NSN, MFG P/N
5961013480717
NSN
5961-01-348-0717
4200938
SEMICONDUCTOR DEVICE ASSEMBLY
NSN, MFG P/N
5961013480717
NSN
5961-01-348-0717
MFG
BAE SYSTEMS LAND & ARMAMENTS L.P. DBA US COMBAT SYSTEMS-GROUND SYSTEMS DIV DIV GROUND SYSTEMS
Description
SEMICONDUCTOR DEVICE ASSEMBLY
Related Searches:
FBL-00-225
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961013480961
NSN
5961-01-348-0961
FBL-00-225
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961013480961
NSN
5961-01-348-0961
MFG
VEECO INSTRUMENTS INC LAMBDA DIV
Description
CURRENT RATING PER CHARACTERISTIC: 3.00 AMPERES MAXIMUM PEAK POINT CURRENT
FUNCTION FOR WHICH DESIGNED: RECTIFIER
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 1000.0 NOMINAL REVERSE VOLTAGE, PEAK
Related Searches:
FBL-00-257
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961013480962
NSN
5961-01-348-0962
FBL-00-257
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961013480962
NSN
5961-01-348-0962
MFG
VEECO INSTRUMENTS INC LAMBDA DIV
Description
CURRENT RATING PER CHARACTERISTIC: 4.00 AMPERES MAXIMUM PEAK POINT CURRENT
FUNCTION FOR WHICH DESIGNED: RECTIFIER
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 1000.0 NOMINAL REVERSE VOLTAGE, PEAK
Related Searches:
MUR4100
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961013480962
NSN
5961-01-348-0962
MFG
FREESCALE SEMICONDUCTOR INC.
Description
CURRENT RATING PER CHARACTERISTIC: 4.00 AMPERES MAXIMUM PEAK POINT CURRENT
FUNCTION FOR WHICH DESIGNED: RECTIFIER
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 1000.0 NOMINAL REVERSE VOLTAGE, PEAK
