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5961-01-355-8882
20 Products
05-4417-2
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961013558882
NSN
5961-01-355-8882
MFG
SOUTHWEST RESEARCH INSTITUTE INC
Description
SEMICONDUCTOR DEVICE,DIODE
Related Searches:
GC41549A-155
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961013558882
NSN
5961-01-355-8882
GC41549A-155
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961013558882
NSN
5961-01-355-8882
MFG
MICROSEMI CORP-MASSACHUSETTS DBA MICROSEMI-LOWELL DIV MICROSEMI - LOWELL
Description
SEMICONDUCTOR DEVICE,DIODE
Related Searches:
409357
RECTIFIER,SEMICONDUCTOR DEVICE,UNITIZED
NSN, MFG P/N
5961013559336
NSN
5961-01-355-9336
409357
RECTIFIER,SEMICONDUCTOR DEVICE,UNITIZED
NSN, MFG P/N
5961013559336
NSN
5961-01-355-9336
MFG
HOBART BROS CO
Description
ABSOLUTE MAXIMUM CURRENT RATING PER CHARACTERISTIC: 60.00 AMPERES AVERAGE FORWARD CURRENT AVERAGED OVER A FULL 60-HZ CYCLE
ABSOLUTE MAXIMUM VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 1600.0 WORKING PEAK REVERSE VOLTAGE
MOUNTING METHOD: UNTHREADED HOLE AND SLOT
Related Searches:
292383P1
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961013559974
NSN
5961-01-355-9974
MFG
BAE SYSTEMS INFORMATION AND ELECTRONIC SYSTEMS INTEGRATION I
Description
FUNCTION FOR WHICH DESIGNED: LIMITER
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 70.0 DEG CELSIUS AMBIENT AIR
MOUNTING FACILITY QUANTITY: 4
MOUNTING METHOD: THREADED HOLE
OVERALL HEIGHT: 0.500 INCHES NOMINAL
OVERALL LENGTH: 1.100 INCHES NOMINAL
OVERALL WIDTH: 0.500 INCHES NOMINAL
TERMINAL TYPE AND QUANTITY: 2 CONNECTOR, COAXIAL
Related Searches:
4042-K32
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961013559974
NSN
5961-01-355-9974
MFG
ROBINSON LABORATORIES INC
Description
FUNCTION FOR WHICH DESIGNED: LIMITER
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 70.0 DEG CELSIUS AMBIENT AIR
MOUNTING FACILITY QUANTITY: 4
MOUNTING METHOD: THREADED HOLE
OVERALL HEIGHT: 0.500 INCHES NOMINAL
OVERALL LENGTH: 1.100 INCHES NOMINAL
OVERALL WIDTH: 0.500 INCHES NOMINAL
TERMINAL TYPE AND QUANTITY: 2 CONNECTOR, COAXIAL
Related Searches:
PL0218CS02
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961013559974
NSN
5961-01-355-9974
PL0218CS02
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961013559974
NSN
5961-01-355-9974
MFG
MICA MICROWAVE CORPORATION
Description
FUNCTION FOR WHICH DESIGNED: LIMITER
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 70.0 DEG CELSIUS AMBIENT AIR
MOUNTING FACILITY QUANTITY: 4
MOUNTING METHOD: THREADED HOLE
OVERALL HEIGHT: 0.500 INCHES NOMINAL
OVERALL LENGTH: 1.100 INCHES NOMINAL
OVERALL WIDTH: 0.500 INCHES NOMINAL
TERMINAL TYPE AND QUANTITY: 2 CONNECTOR, COAXIAL
Related Searches:
MA4P504-30
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961013560744
NSN
5961-01-356-0744
MA4P504-30
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961013560744
NSN
5961-01-356-0744
MFG
M/A-COM INC. DBA TYCO ELECTRONIC WIRELESS SYSTEM
Description
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: ODS-30
SEMICONDUCTOR MATERIAL: SILICON ALLOY
Related Searches:
1N6044
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961013560746
NSN
5961-01-356-0746
MFG
ELECTRONIC INDUSTRIES ASSOCIATION
Description
CURRENT RATING PER CHARACTERISTIC: 5.00 MICROAMPERES MAXIMUM REVERSE CURRENT, DC
POWER RATING PER CHARACTERISTIC: 1.0 WATTS NOMINAL TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: BIPOLAR AND BIDIRECTIONAL
SPECIFICATION/STANDARD DATA: 80131-RELEASE 6593 PROFESSIONAL/INDUSTRIAL ASSOCIATION STANDARD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 14.4 MINIMUM BREAKDOWN VOLTAGE, DC AND 17.6 MAXIMUM BREAKDOWN VOLTAGE, DC
Related Searches:
2N1910
SEMICONDUCTOR DEVICE,THYRISTOR
NSN, MFG P/N
5961013561321
NSN
5961-01-356-1321
2N1910
SEMICONDUCTOR DEVICE,THYRISTOR
NSN, MFG P/N
5961013561321
NSN
5961-01-356-1321
MFG
INTERNATIONAL RECTIFIER CORPORATION
Description
SEMICONDUCTOR DEVICE,THYRISTOR
Related Searches:
353-9011-031
SEMICONDUCTOR DEVICE,THYRISTOR
NSN, MFG P/N
5961013561321
NSN
5961-01-356-1321
353-9011-031
SEMICONDUCTOR DEVICE,THYRISTOR
NSN, MFG P/N
5961013561321
NSN
5961-01-356-1321
MFG
ROCKWELL COLLINS INC. DBA GOVERNMENT SYSTEMS DIV GOVERNMENT SYSTEMS
Description
SEMICONDUCTOR DEVICE,THYRISTOR
Related Searches:
68-7081-02
SEMICONDUCTOR DEVICE,THYRISTOR
NSN, MFG P/N
5961013561321
NSN
5961-01-356-1321
68-7081-02
SEMICONDUCTOR DEVICE,THYRISTOR
NSN, MFG P/N
5961013561321
NSN
5961-01-356-1321
MFG
INTERNATIONAL RECTIFIER CORP ORATION USE CAGE CODE 81483 FOR CATALOGING.
Description
SEMICONDUCTOR DEVICE,THYRISTOR
Related Searches:
JAN2N1910
SEMICONDUCTOR DEVICE,THYRISTOR
NSN, MFG P/N
5961013561321
NSN
5961-01-356-1321
JAN2N1910
SEMICONDUCTOR DEVICE,THYRISTOR
NSN, MFG P/N
5961013561321
NSN
5961-01-356-1321
MFG
MILITARY SPECIFICATIONS PROMULGATED BY MILITARY DEPARTMENTS/AGENCIES UNDER AUTHORITY OF DEFENSE STANDARDIZATION MANUAL 4120 3-M
Description
SEMICONDUCTOR DEVICE,THYRISTOR
Related Searches:
7555195P0611
TRANSISTOR
NSN, MFG P/N
5961013561380
NSN
5961-01-356-1380
MFG
LOCKHEED MARTIN CORP NAVAL ELECTRONICS & SURVEILLANCE SYSTEMS
Description
(NON-CORE DATA) CHANNEL POLARITY AND CONTROL TYPE: N-CHANNEL INSULATED GATE TYPE
CRITICALITY CODE JUSTIFICATION: FEAT
CURRENT RATING PER CHARACTERISTIC: 24.00 AMPERES MAXIMUM DRAIN CURRENT
FEATURES PROVIDED: ELECTROSTATIC SENSITIVE AND HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: FIELD EFFECT
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: T0-254AA
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 150.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
OVERALL HEIGHT: 0.249 INCHES MINIMUM
OVERALL LENGTH: 1.290 INCHES MINIMUM AND 1.300 INCHES MAXIMUM
OVERALL WIDTH: 0.535 INCHES MINIMUM AND 0.545 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 125.0 WATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: NUCLEAR HARDNESS CRITICAL ITEM
TERMINAL LENGTH: 0.500 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 3 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 200.0 MAXI
Related Searches:
94-7495
TRANSISTOR
NSN, MFG P/N
5961013561380
NSN
5961-01-356-1380
MFG
INTERNATIONAL RECTIFIER CORP ORATION USE CAGE CODE 81483 FOR CATALOGING.
Description
(NON-CORE DATA) CHANNEL POLARITY AND CONTROL TYPE: N-CHANNEL INSULATED GATE TYPE
CRITICALITY CODE JUSTIFICATION: FEAT
CURRENT RATING PER CHARACTERISTIC: 24.00 AMPERES MAXIMUM DRAIN CURRENT
FEATURES PROVIDED: ELECTROSTATIC SENSITIVE AND HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: FIELD EFFECT
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: T0-254AA
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 150.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
OVERALL HEIGHT: 0.249 INCHES MINIMUM
OVERALL LENGTH: 1.290 INCHES MINIMUM AND 1.300 INCHES MAXIMUM
OVERALL WIDTH: 0.535 INCHES MINIMUM AND 0.545 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 125.0 WATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: NUCLEAR HARDNESS CRITICAL ITEM
TERMINAL LENGTH: 0.500 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 3 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 200.0 MAXI
Related Searches:
NH7555195P611
TRANSISTOR
NSN, MFG P/N
5961013561380
NSN
5961-01-356-1380
MFG
DLA LAND AND MARITIME
Description
(NON-CORE DATA) CHANNEL POLARITY AND CONTROL TYPE: N-CHANNEL INSULATED GATE TYPE
CRITICALITY CODE JUSTIFICATION: FEAT
CURRENT RATING PER CHARACTERISTIC: 24.00 AMPERES MAXIMUM DRAIN CURRENT
FEATURES PROVIDED: ELECTROSTATIC SENSITIVE AND HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: FIELD EFFECT
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: T0-254AA
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 150.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
OVERALL HEIGHT: 0.249 INCHES MINIMUM
OVERALL LENGTH: 1.290 INCHES MINIMUM AND 1.300 INCHES MAXIMUM
OVERALL WIDTH: 0.535 INCHES MINIMUM AND 0.545 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 125.0 WATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: NUCLEAR HARDNESS CRITICAL ITEM
TERMINAL LENGTH: 0.500 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 3 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 200.0 MAXI
Related Searches:
1853-0609
TRANSISTOR
NSN, MFG P/N
5961013561381
NSN
5961-01-356-1381
MFG
AGILENT TECHNOLOGIES INC. DBA NORTH AMERICAN CONTACT CENTER DIV AGILENT BUSINESS CENTER
Description
CURRENT RATING PER CHARACTERISTIC: 600.00 MILLIAMPERES MAXIMUM COLLECTOR CURRENT, DC
INCLOSURE MATERIAL: PLASTIC OR CERAMIC
INTERNAL CONFIGURATION: JUNCTION CONTACT
MOUNTING METHOD: TERMINAL
OVERALL HEIGHT: 0.062 INCHES NOMINAL
OVERALL LENGTH: 0.125 INCHES NOMINAL
OVERALL WIDTH: 0.060 INCHES NOMINAL
POWER RATING PER CHARACTERISTIC: 1.0 WATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: PNP
TERMINAL TYPE AND QUANTITY: 3 PIN
TRANSFER RATIO: 100.0 MINIMUM STATIC FORWARD CURRENT TRANSFER RATIO, COMMON-EMITTER AND 300.0 MAXIMUM STATIC FORWARD CURRENT TRANSFER RATIO, COMMON-EMITTER
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 60.0 MINIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-EMITTER, BASE OPEN
Related Searches:
MXT2907A
TRANSISTOR
NSN, MFG P/N
5961013561381
NSN
5961-01-356-1381
MFG
FREESCALE SEMICONDUCTOR INC.
Description
CURRENT RATING PER CHARACTERISTIC: 600.00 MILLIAMPERES MAXIMUM COLLECTOR CURRENT, DC
INCLOSURE MATERIAL: PLASTIC OR CERAMIC
INTERNAL CONFIGURATION: JUNCTION CONTACT
MOUNTING METHOD: TERMINAL
OVERALL HEIGHT: 0.062 INCHES NOMINAL
OVERALL LENGTH: 0.125 INCHES NOMINAL
OVERALL WIDTH: 0.060 INCHES NOMINAL
POWER RATING PER CHARACTERISTIC: 1.0 WATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: PNP
TERMINAL TYPE AND QUANTITY: 3 PIN
TRANSFER RATIO: 100.0 MINIMUM STATIC FORWARD CURRENT TRANSFER RATIO, COMMON-EMITTER AND 300.0 MAXIMUM STATIC FORWARD CURRENT TRANSFER RATIO, COMMON-EMITTER
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 60.0 MINIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-EMITTER, BASE OPEN
Related Searches:
7555152P603
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961013561382
NSN
5961-01-356-1382
7555152P603
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961013561382
NSN
5961-01-356-1382
MFG
LOCKHEED MARTIN CORP NAVAL ELECTRONICS & SURVEILLANCE SYSTEMS
Description
CRITICALITY CODE JUSTIFICATION: FEAT
FEATURES PROVIDED: ELECTROSTATIC SENSITIVE AND HERMETICALLY SEALED CASE
FUNCTION FOR WHICH DESIGNED: DETECTOR
III END ITEM IDENTIFICATION: B-2 (ATB) BOMBER AIRCRAFT.
III PRECIOUS MATERIAL: GOLD
III PRECIOUS MATERIAL AND LOCATION: TERMINALS GOLD
INCLOSURE MATERIAL: GLASS
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 175.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: PRESS FIT
OVERALL HEIGHT: 0.001 INCHES MINIMUM AND 0.002 INCHES MAXIMUM
OVERALL LENGTH: 0.010 INCHES MINIMUM AND 0.012 INCHES MAXIMUM
OVERALL WIDTH: 0.006 INCHES MINIMUM AND 0.010 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 150.0 MILLIWATTS MAXIMUM TOTAL DEVICE DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: HARDNESS CRITICAL PROCESS; JUNCTION PATTERN ARRANGEMENT: PN
TERMINAL TYPE AND QUANTITY: 2 RIBBON
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 4.0 MINIMUM BREAKDOWN VOLTAGE, DC
Related Searches:
QSCH-5399
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961013561382
NSN
5961-01-356-1382
MFG
AVAGO TECHNOLOGIES U.S. INC. DIV AVAGO TECHNOLOGIES
Description
CRITICALITY CODE JUSTIFICATION: FEAT
FEATURES PROVIDED: ELECTROSTATIC SENSITIVE AND HERMETICALLY SEALED CASE
FUNCTION FOR WHICH DESIGNED: DETECTOR
III END ITEM IDENTIFICATION: B-2 (ATB) BOMBER AIRCRAFT.
III PRECIOUS MATERIAL: GOLD
III PRECIOUS MATERIAL AND LOCATION: TERMINALS GOLD
INCLOSURE MATERIAL: GLASS
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 175.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: PRESS FIT
OVERALL HEIGHT: 0.001 INCHES MINIMUM AND 0.002 INCHES MAXIMUM
OVERALL LENGTH: 0.010 INCHES MINIMUM AND 0.012 INCHES MAXIMUM
OVERALL WIDTH: 0.006 INCHES MINIMUM AND 0.010 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 150.0 MILLIWATTS MAXIMUM TOTAL DEVICE DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: HARDNESS CRITICAL PROCESS; JUNCTION PATTERN ARRANGEMENT: PN
TERMINAL TYPE AND QUANTITY: 2 RIBBON
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 4.0 MINIMUM BREAKDOWN VOLTAGE, DC
Related Searches:
1900-0074
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961013561383
NSN
5961-01-356-1383
MFG
AVAGO TECHNOLOGIES U.S. INC. DIV AVAGO TECHNOLOGIES
Description
CAPACITANCE RATING IN PICOFARADS: 1.2 MAXIMUM
CRITICALITY CODE JUSTIFICATION: FEAT
III END ITEM IDENTIFICATION: ARLEIGH BURKE CLASS DDG; AIRCRAFT, AIRLIFTER C-17A; OLIVER PERRY CLASS FFG; LANDING CRAFT AIR CUSHION (LCAC); TICONDEROGA CLASS CG (47); FORRESTAL CLASS CV; SPRUANCE CLASS DD (963); LOS ANGELES CLASS SSN (688); NIMITZ CLASS CVN
INCLOSURE MATERIAL: PLASTIC OR CERAMIC
MOUNTING METHOD: TERMINAL
OVERALL HEIGHT: 0.062 INCHES NOMINAL
OVERALL LENGTH: 0.125 INCHES NOMINAL
OVERALL WIDTH: 0.060 INCHES NOMINAL
POWER RATING PER CHARACTERISTIC: 250.0 MILLIWATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: WEAPON SYSTEM ESSENTIAL
TERMINAL TYPE AND QUANTITY: 3 PIN
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 20.0 MINIMUM BREAKDOWN VOLTAGE, DC
