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5961-01-381-7593
20 Products
A531A134-101
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961013817593
NSN
5961-01-381-7593
A531A134-101
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961013817593
NSN
5961-01-381-7593
MFG
KEARFOTT CORPORATION DBA KEARFOTT DIV GUIDANCE AND NAVIGATION DIVISION
Description
CURRENT RATING PER CHARACTERISTIC: 250.00 MILLIAMPERES MAXIMUM FORWARD CURRENT, DC
INCLOSURE MATERIAL: GLASS
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 175.0 DEG CELSIUS JUNCTION
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.107 INCHES MAXIMUM
OVERALL LENGTH: 0.300 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 400.0 MILLIWATTS MAXIMUM TOTAL DEVICE DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL LENGTH: 1.000 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 12.0 MAXIMUM REVERSE VOLTAGE, INSTANTANEOUS
Related Searches:
DKV6515-77
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961013817593
NSN
5961-01-381-7593
DKV6515-77
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961013817593
NSN
5961-01-381-7593
MFG
SKYWORKS SOLUTIONS INC.
Description
CURRENT RATING PER CHARACTERISTIC: 250.00 MILLIAMPERES MAXIMUM FORWARD CURRENT, DC
INCLOSURE MATERIAL: GLASS
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 175.0 DEG CELSIUS JUNCTION
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.107 INCHES MAXIMUM
OVERALL LENGTH: 0.300 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 400.0 MILLIWATTS MAXIMUM TOTAL DEVICE DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL LENGTH: 1.000 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 12.0 MAXIMUM REVERSE VOLTAGE, INSTANTANEOUS
Related Searches:
SMV1676H
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961013817593
NSN
5961-01-381-7593
MFG
FREESCALE SEMICONDUCTOR INC.
Description
CURRENT RATING PER CHARACTERISTIC: 250.00 MILLIAMPERES MAXIMUM FORWARD CURRENT, DC
INCLOSURE MATERIAL: GLASS
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 175.0 DEG CELSIUS JUNCTION
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.107 INCHES MAXIMUM
OVERALL LENGTH: 0.300 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 400.0 MILLIWATTS MAXIMUM TOTAL DEVICE DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL LENGTH: 1.000 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 12.0 MAXIMUM REVERSE VOLTAGE, INSTANTANEOUS
Related Searches:
444A110-1
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961013817607
NSN
5961-01-381-7607
MFG
TEMPO INSTRUMENT INC DEFENSE ELECTRONICS DIV
Description
INCLOSURE MATERIAL: METAL
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 150.0 DEG CELSIUS AMBIENT AIR
MOUNTING FACILITY QUANTITY: 1
MOUNTING METHOD: THREADED STUD
NOMINAL THREAD SIZE: 0.190 INCHES
OVERALL DIAMETER: 0.424 INCHES MAXIMUM
OVERALL LENGTH: 1.253 INCHES MAXIMUM
OVERALL WIDTH ACROSS FLATS: 0.437 INCHES MAXIMUM
TERMINAL TYPE AND QUANTITY: 1 TAB, SOLDER LUG AND 1 THREADED STUD
THREAD SERIES DESIGNATOR: UNF
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 200.0 NOMINAL REVERSE VOLTAGE, PEAK
Related Searches:
UTG8103
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961013817607
NSN
5961-01-381-7607
MFG
MICRO USPD INC
Description
INCLOSURE MATERIAL: METAL
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 150.0 DEG CELSIUS AMBIENT AIR
MOUNTING FACILITY QUANTITY: 1
MOUNTING METHOD: THREADED STUD
NOMINAL THREAD SIZE: 0.190 INCHES
OVERALL DIAMETER: 0.424 INCHES MAXIMUM
OVERALL LENGTH: 1.253 INCHES MAXIMUM
OVERALL WIDTH ACROSS FLATS: 0.437 INCHES MAXIMUM
TERMINAL TYPE AND QUANTITY: 1 TAB, SOLDER LUG AND 1 THREADED STUD
THREAD SERIES DESIGNATOR: UNF
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 200.0 NOMINAL REVERSE VOLTAGE, PEAK
Related Searches:
444A110-2
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961013817674
NSN
5961-01-381-7674
MFG
TEMPO INSTRUMENT INC DEFENSE ELECTRONICS DIV
Description
INCLOSURE MATERIAL: METAL
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 150.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: THREADED STUD
NOMINAL THREAD SIZE: 0.190 INCHES
OVERALL DIAMETER: 0.424 INCHES MAXIMUM
OVERALL WIDTH ACROSS FLATS: 0.437 INCHES MAXIMUM
TERMINAL LENGTH: 1.253 INCHES MAXIMUM
TERMINAL TYPE AND QUANTITY: 1 TAB, SOLDER LUG AND 1 THREADED STUD
THREAD SERIES DESIGNATOR: UNF
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 200.0 NOMINAL REVERSE VOLTAGE, PEAK
Related Searches:
UTG8104
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961013817674
NSN
5961-01-381-7674
MFG
MICRO USPD INC
Description
INCLOSURE MATERIAL: METAL
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 150.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: THREADED STUD
NOMINAL THREAD SIZE: 0.190 INCHES
OVERALL DIAMETER: 0.424 INCHES MAXIMUM
OVERALL WIDTH ACROSS FLATS: 0.437 INCHES MAXIMUM
TERMINAL LENGTH: 1.253 INCHES MAXIMUM
TERMINAL TYPE AND QUANTITY: 1 TAB, SOLDER LUG AND 1 THREADED STUD
THREAD SERIES DESIGNATOR: UNF
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 200.0 NOMINAL REVERSE VOLTAGE, PEAK
Related Searches:
A532A187-102
SEMICONDUCTOR DEVICES,UNITIZED
NSN, MFG P/N
5961013817680
NSN
5961-01-381-7680
A532A187-102
SEMICONDUCTOR DEVICES,UNITIZED
NSN, MFG P/N
5961013817680
NSN
5961-01-381-7680
MFG
BAE SYSTEMS INFORMATION AND ELECTRONIC SYSTEMS INTEGRATION I
Description
COMPONENT NAME AND QUANTITY: 7 TRANSISTOR
INCLOSURE MATERIAL: PLASTIC
MOUNTING METHOD: TERMINAL
OVERALL LENGTH: 0.440 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON ALL TRANSISTOR
TERMINAL TYPE AND QUANTITY: 16 PIN
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 50.0 MAXIMUM COLLECTOR TO EMITTER SATURATION VOLTAGE ALL TRANSISTOR
Related Searches:
SG2003F-12309
SEMICONDUCTOR DEVICES,UNITIZED
NSN, MFG P/N
5961013817680
NSN
5961-01-381-7680
SG2003F-12309
SEMICONDUCTOR DEVICES,UNITIZED
NSN, MFG P/N
5961013817680
NSN
5961-01-381-7680
MFG
MATERIALS ELECTRONIC PRODUCTS CORP
Description
COMPONENT NAME AND QUANTITY: 7 TRANSISTOR
INCLOSURE MATERIAL: PLASTIC
MOUNTING METHOD: TERMINAL
OVERALL LENGTH: 0.440 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON ALL TRANSISTOR
TERMINAL TYPE AND QUANTITY: 16 PIN
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 50.0 MAXIMUM COLLECTOR TO EMITTER SATURATION VOLTAGE ALL TRANSISTOR
Related Searches:
1901-0965
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961013817687
NSN
5961-01-381-7687
MFG
AVAGO TECHNOLOGIES U.S. INC. DIV AVAGO TECHNOLOGIES
Description
CURRENT RATING PER CHARACTERISTIC: 3.00 AMPERES MAXIMUM AVERAGE FORWARD CURRENT AVERAGED OVER A FULL 60-HZ CYCLE
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: PLASTIC
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.200 INCHES NOMINAL
OVERALL LENGTH: 0.375 INCHES NOMINAL
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL LENGTH: 1.000 INCHES NOMINAL
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 100.0 MAXIMUM REVERSE VOLTAGE, PEAK
Related Searches:
353-0520-012
RECTIFIER,SEMICONDUCTOR DEVICE,UNITIZED
NSN, MFG P/N
5961013817688
NSN
5961-01-381-7688
353-0520-012
RECTIFIER,SEMICONDUCTOR DEVICE,UNITIZED
NSN, MFG P/N
5961013817688
NSN
5961-01-381-7688
MFG
ROCKWELL COLLINS INC. DIV GOVERNMENT SYSTEMS - DALLAS
Description
ABSOLUTE MAXIMUM VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 600.0 PEAK INVERSE VOLTAGE
MATERIAL: SILICON
OVERALL HEIGHT: 1.2500 INCHES MAXIMUM
OVERALL LENGTH: 2.000 INCHES NOMINAL
OVERALL WIDTH: 1.900 INCHES NOMINAL
Related Searches:
391-0353-120
RECTIFIER,SEMICONDUCTOR DEVICE,UNITIZED
NSN, MFG P/N
5961013817688
NSN
5961-01-381-7688
391-0353-120
RECTIFIER,SEMICONDUCTOR DEVICE,UNITIZED
NSN, MFG P/N
5961013817688
NSN
5961-01-381-7688
MFG
ROCKWELL COLLINS INC. DBA GOVERNMENT SYSTEMS DIV GOVERNMENT SYSTEMS
Description
ABSOLUTE MAXIMUM VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 600.0 PEAK INVERSE VOLTAGE
MATERIAL: SILICON
OVERALL HEIGHT: 1.2500 INCHES MAXIMUM
OVERALL LENGTH: 2.000 INCHES NOMINAL
OVERALL WIDTH: 1.900 INCHES NOMINAL
Related Searches:
210043
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961013817693
NSN
5961-01-381-7693
MFG
WAVETEK RF PRODUCTS INC
Description
INCLOSURE MATERIAL: CERAMIC OR GLASS OR PLASTIC
MOUNTING METHOD: TERMINAL
OVERALL LENGTH: 4.25 MILLIMETERS MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 4.6 MAXIMUM REGULATOR VOLTAGE, DC
Related Searches:
BZX79C4V3
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961013817693
NSN
5961-01-381-7693
MFG
PHILLIPS COMPONENTS INC
Description
INCLOSURE MATERIAL: CERAMIC OR GLASS OR PLASTIC
MOUNTING METHOD: TERMINAL
OVERALL LENGTH: 4.25 MILLIMETERS MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 4.6 MAXIMUM REGULATOR VOLTAGE, DC
Related Searches:
851956
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961013817789
NSN
5961-01-381-7789
MFG
FLUKE CORPORATION
Description
INCLOSURE MATERIAL: PLASTIC OR CERAMIC
MOUNTING METHOD: TERMINAL
OVERALL LENGTH: 0.215 INCHES NOMINAL
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 6.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-EMITTER, WITH SPECIFIED CIRCUIT BETWEEN BASE AND EMITTER
Related Searches:
PF20
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961013817789
NSN
5961-01-381-7789
MFG
SEMTECH CORPUS CHRISTI.A. DE C.V. REYNOSA FACILITY
Description
INCLOSURE MATERIAL: PLASTIC OR CERAMIC
MOUNTING METHOD: TERMINAL
OVERALL LENGTH: 0.215 INCHES NOMINAL
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 6.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-EMITTER, WITH SPECIFIED CIRCUIT BETWEEN BASE AND EMITTER
Related Searches:
353-3793-022
SEMICONDUCTOR DEVICE SET
NSN, MFG P/N
5961013817814
NSN
5961-01-381-7814
353-3793-022
SEMICONDUCTOR DEVICE SET
NSN, MFG P/N
5961013817814
NSN
5961-01-381-7814
MFG
ROCKWELL COLLINS INC. DBA GOVERNMENT SYSTEMS DIV GOVERNMENT SYSTEMS
Description
COMPONENT FUNCTION RELATIONSHIP: MATCHED
COMPONENT NAME AND QUANTITY: 3 SEMICONDUCTOR DEVICE DIODE
FIELD FORCE EFFECT TYPE: ELECTROSTATIC CHARGE
INCLOSURE MATERIAL: CERAMIC AND METAL ALL SEMICONDUCTOR DEVICE DIODE
MOUNTING METHOD: PRESS FIT ALL SEMICONDUCTOR DEVICE DIODE
OVERALL DIAMETER: 0.119 INCHES MINIMUM AND 0.124 INCHES MAXIMUM ALL SEMICONDUCTOR DEVICE DIODE
OVERALL LENGTH: 0.205 INCHES MINIMUM AND 0.225 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON ALL SEMICONDUCTOR DEVICE DIODE
SPECIFICATION/STANDARD DATA: 13499-353-3793 MANUFACTURERS SPECIFICATION
TERMINAL TYPE AND QUANTITY: 2 CASE ALL SEMICONDUCTOR DEVICE DIODE
TEST DATA DOCUMENT: 13499-580-6557 SPECIFICATION
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 35.0 MINIMUM BREAKDOWN VOLTAGE, DC
Related Searches:
391-0353-152
SEMICONDUCTOR DEVICE SET
NSN, MFG P/N
5961013817814
NSN
5961-01-381-7814
391-0353-152
SEMICONDUCTOR DEVICE SET
NSN, MFG P/N
5961013817814
NSN
5961-01-381-7814
MFG
ROCKWELL COLLINS INC. DIV GOVERNMENT SYSTEMS - DALLAS
Description
COMPONENT FUNCTION RELATIONSHIP: MATCHED
COMPONENT NAME AND QUANTITY: 3 SEMICONDUCTOR DEVICE DIODE
FIELD FORCE EFFECT TYPE: ELECTROSTATIC CHARGE
INCLOSURE MATERIAL: CERAMIC AND METAL ALL SEMICONDUCTOR DEVICE DIODE
MOUNTING METHOD: PRESS FIT ALL SEMICONDUCTOR DEVICE DIODE
OVERALL DIAMETER: 0.119 INCHES MINIMUM AND 0.124 INCHES MAXIMUM ALL SEMICONDUCTOR DEVICE DIODE
OVERALL LENGTH: 0.205 INCHES MINIMUM AND 0.225 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON ALL SEMICONDUCTOR DEVICE DIODE
SPECIFICATION/STANDARD DATA: 13499-353-3793 MANUFACTURERS SPECIFICATION
TERMINAL TYPE AND QUANTITY: 2 CASE ALL SEMICONDUCTOR DEVICE DIODE
TEST DATA DOCUMENT: 13499-580-6557 SPECIFICATION
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 35.0 MINIMUM BREAKDOWN VOLTAGE, DC
Related Searches:
DVH6731-73
SEMICONDUCTOR DEVICE SET
NSN, MFG P/N
5961013817814
NSN
5961-01-381-7814
MFG
ALPHA INDUSTRIES INC ADVANCED PRODUCTS DIV
Description
COMPONENT FUNCTION RELATIONSHIP: MATCHED
COMPONENT NAME AND QUANTITY: 3 SEMICONDUCTOR DEVICE DIODE
FIELD FORCE EFFECT TYPE: ELECTROSTATIC CHARGE
INCLOSURE MATERIAL: CERAMIC AND METAL ALL SEMICONDUCTOR DEVICE DIODE
MOUNTING METHOD: PRESS FIT ALL SEMICONDUCTOR DEVICE DIODE
OVERALL DIAMETER: 0.119 INCHES MINIMUM AND 0.124 INCHES MAXIMUM ALL SEMICONDUCTOR DEVICE DIODE
OVERALL LENGTH: 0.205 INCHES MINIMUM AND 0.225 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON ALL SEMICONDUCTOR DEVICE DIODE
SPECIFICATION/STANDARD DATA: 13499-353-3793 MANUFACTURERS SPECIFICATION
TERMINAL TYPE AND QUANTITY: 2 CASE ALL SEMICONDUCTOR DEVICE DIODE
TEST DATA DOCUMENT: 13499-580-6557 SPECIFICATION
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 35.0 MINIMUM BREAKDOWN VOLTAGE, DC
Related Searches:
M6X1034
SEMICONDUCTOR DEVICE SET
NSN, MFG P/N
5961013817814
NSN
5961-01-381-7814
MFG
AEROFLEX / METELICS INC.
Description
COMPONENT FUNCTION RELATIONSHIP: MATCHED
COMPONENT NAME AND QUANTITY: 3 SEMICONDUCTOR DEVICE DIODE
FIELD FORCE EFFECT TYPE: ELECTROSTATIC CHARGE
INCLOSURE MATERIAL: CERAMIC AND METAL ALL SEMICONDUCTOR DEVICE DIODE
MOUNTING METHOD: PRESS FIT ALL SEMICONDUCTOR DEVICE DIODE
OVERALL DIAMETER: 0.119 INCHES MINIMUM AND 0.124 INCHES MAXIMUM ALL SEMICONDUCTOR DEVICE DIODE
OVERALL LENGTH: 0.205 INCHES MINIMUM AND 0.225 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON ALL SEMICONDUCTOR DEVICE DIODE
SPECIFICATION/STANDARD DATA: 13499-353-3793 MANUFACTURERS SPECIFICATION
TERMINAL TYPE AND QUANTITY: 2 CASE ALL SEMICONDUCTOR DEVICE DIODE
TEST DATA DOCUMENT: 13499-580-6557 SPECIFICATION
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 35.0 MINIMUM BREAKDOWN VOLTAGE, DC
