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5961-01-441-0052

20 Products

B40DL40S05

RECTIFIER,SEMICONDUCTOR DEVICE

NSN, MFG P/N

5961014410052

NSN

5961-01-441-0052

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B40DL40S05

RECTIFIER,SEMICONDUCTOR DEVICE

NSN, MFG P/N

5961014410052

NSN

5961-01-441-0052

MFG

INTERNATIONAL RECTIFIER CORP ORATION USE CAGE CODE 81483 FOR CATALOGING.

Description

ABSOLUTE MAXIMUM CURRENT RATING PER CHARACTERISTIC: 40.00 AMPERES FORWARD CURRENT, AVERAGE
MATERIAL: SILICON
MOUNTING METHOD: UNTHREADED HOLE

26MB80A

RECTIFIER,SEMICONDUCTOR DEVICE

NSN, MFG P/N

5961014410053

NSN

5961-01-441-0053

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26MB80A

RECTIFIER,SEMICONDUCTOR DEVICE

NSN, MFG P/N

5961014410053

NSN

5961-01-441-0053

MFG

INTERNATIONAL RECTIFIER CORP ORATION USE CAGE CODE 81483 FOR CATALOGING.

Description

ABSOLUTE MAXIMUM VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 800.0 REPETITIVE PEAK REVERSE VOLTAGE, MAXIMUM PEAK TOTAL VALUE
CIRCUIT CONNECTION STYLE DESIGNATOR: 7 BRIDGE 1 PHASE
MOUNTING METHOD: UNTHREADED HOLE

36MT80A

RECTIFIER,SEMICONDUCTOR DEVICE

NSN, MFG P/N

5961014410054

NSN

5961-01-441-0054

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36MT80A

RECTIFIER,SEMICONDUCTOR DEVICE

NSN, MFG P/N

5961014410054

NSN

5961-01-441-0054

MFG

INTERNATIONAL RECTIFIER CORP ORATION USE CAGE CODE 81483 FOR CATALOGING.

Description

ABSOLUTE MAXIMUM VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 800.0 REPETITIVE PEAK REVERSE VOLTAGE
CIRCUIT CONNECTION STYLE DESIGNATOR: 8 BRIDGE 3 PHASE
MOUNTING METHOD: UNTHREADED HOLE

360501

TRANSISTOR

NSN, MFG P/N

5961014411875

NSN

5961-01-441-1875

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360501

TRANSISTOR

NSN, MFG P/N

5961014411875

NSN

5961-01-441-1875

MFG

DYNARAD CORP

Description

DESIGN CONTROL REFERENCE: 360501
MANUFACTURERS CODE: 57362
SPECIAL FEATURES: CURRENT TYPE; END ITEM APPLICATION 6525-01-370-7552; X-RAY APPARATUS,DENTAL; MODEL ALPHA MPDX
THE MANUFACTURERS DATA:

REPAIR PART

TRANSISTOR

NSN, MFG P/N

5961014411875

NSN

5961-01-441-1875

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REPAIR PART

TRANSISTOR

NSN, MFG P/N

5961014411875

NSN

5961-01-441-1875

MFG

DEFENSE LOGISTICS AGENCY DIRECTORATE OF MEDICAL MATERIEL DEFENSE SUPPLY CENTER PHILADELPHIA

Description

DESIGN CONTROL REFERENCE: 360501
MANUFACTURERS CODE: 57362
SPECIAL FEATURES: CURRENT TYPE; END ITEM APPLICATION 6525-01-370-7552; X-RAY APPARATUS,DENTAL; MODEL ALPHA MPDX
THE MANUFACTURERS DATA:

655-1021

RECTIFIER,SEMICONDUCTOR DEVICE

NSN, MFG P/N

5961014411890

NSN

5961-01-441-1890

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655-1021

RECTIFIER,SEMICONDUCTOR DEVICE

NSN, MFG P/N

5961014411890

NSN

5961-01-441-1890

MFG

MICRO USPD INC

Description

ABSOLUTE MAXIMUM CURRENT RATING PER CHARACTERISTIC: 25.00 AMPERES FORWARD CURRENT, DC
ABSOLUTE MAXIMUM VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 600.0 PEAK INVERSE VOLTAGE
CIRCUIT CONNECTION STYLE DESIGNATOR: 7 BRIDGE 1 PHASE
MATERIAL: GLASS
MOUNTING METHOD: TERMINAL
SPECIAL FEATURES: ENCAPSULATED; ELECTROSTATICALLY SENSITIVE; OP TEMP M65 TO P150 DEG C

7903529-12

RECTIFIER,SEMICONDUCTOR DEVICE

NSN, MFG P/N

5961014411890

NSN

5961-01-441-1890

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7903529-12

RECTIFIER,SEMICONDUCTOR DEVICE

NSN, MFG P/N

5961014411890

NSN

5961-01-441-1890

MFG

LOCKHEED MARTIN CORPORATION DBA LOCKHEED MARTIN DIV MS2

Description

ABSOLUTE MAXIMUM CURRENT RATING PER CHARACTERISTIC: 25.00 AMPERES FORWARD CURRENT, DC
ABSOLUTE MAXIMUM VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 600.0 PEAK INVERSE VOLTAGE
CIRCUIT CONNECTION STYLE DESIGNATOR: 7 BRIDGE 1 PHASE
MATERIAL: GLASS
MOUNTING METHOD: TERMINAL
SPECIAL FEATURES: ENCAPSULATED; ELECTROSTATICALLY SENSITIVE; OP TEMP M65 TO P150 DEG C

SENB547-12

RECTIFIER,SEMICONDUCTOR DEVICE

NSN, MFG P/N

5961014411890

NSN

5961-01-441-1890

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SENB547-12

RECTIFIER,SEMICONDUCTOR DEVICE

NSN, MFG P/N

5961014411890

NSN

5961-01-441-1890

MFG

RSM ELECTRON POWER INC . DBA RSM SENSITRON SEMICONDUCTOR

Description

ABSOLUTE MAXIMUM CURRENT RATING PER CHARACTERISTIC: 25.00 AMPERES FORWARD CURRENT, DC
ABSOLUTE MAXIMUM VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 600.0 PEAK INVERSE VOLTAGE
CIRCUIT CONNECTION STYLE DESIGNATOR: 7 BRIDGE 1 PHASE
MATERIAL: GLASS
MOUNTING METHOD: TERMINAL
SPECIAL FEATURES: ENCAPSULATED; ELECTROSTATICALLY SENSITIVE; OP TEMP M65 TO P150 DEG C

655-192-6

RECTIFIER,SEMICONDUCTOR DEVICE

NSN, MFG P/N

5961014411891

NSN

5961-01-441-1891

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655-192-6

RECTIFIER,SEMICONDUCTOR DEVICE

NSN, MFG P/N

5961014411891

NSN

5961-01-441-1891

MFG

MICRO USPD INC

Description

ABSOLUTE MAXIMUM CURRENT RATING PER CHARACTERISTIC: 25.00 AMPERES FORWARD CURRENT, DC
ABSOLUTE MAXIMUM VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 600.0 PEAK INVERSE VOLTAGE
CIRCUIT CONNECTION STYLE DESIGNATOR: 7 BRIDGE 1 PHASE
MATERIAL: GLASS
MOUNTING METHOD: TERMINAL
SPECIAL FEATURES: ENCAPSULATED; ELECTROSTATICALLY SENSITIVE; OP TEMP M65 TO P150 DEG C

7903529-11

RECTIFIER,SEMICONDUCTOR DEVICE

NSN, MFG P/N

5961014411891

NSN

5961-01-441-1891

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7903529-11

RECTIFIER,SEMICONDUCTOR DEVICE

NSN, MFG P/N

5961014411891

NSN

5961-01-441-1891

MFG

LOCKHEED MARTIN CORPORATION DBA LOCKHEED MARTIN DIV MS2

Description

ABSOLUTE MAXIMUM CURRENT RATING PER CHARACTERISTIC: 25.00 AMPERES FORWARD CURRENT, DC
ABSOLUTE MAXIMUM VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 600.0 PEAK INVERSE VOLTAGE
CIRCUIT CONNECTION STYLE DESIGNATOR: 7 BRIDGE 1 PHASE
MATERIAL: GLASS
MOUNTING METHOD: TERMINAL
SPECIAL FEATURES: ENCAPSULATED; ELECTROSTATICALLY SENSITIVE; OP TEMP M65 TO P150 DEG C

SENB547-11

RECTIFIER,SEMICONDUCTOR DEVICE

NSN, MFG P/N

5961014411891

NSN

5961-01-441-1891

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SENB547-11

RECTIFIER,SEMICONDUCTOR DEVICE

NSN, MFG P/N

5961014411891

NSN

5961-01-441-1891

MFG

RSM ELECTRON POWER INC . DBA RSM SENSITRON SEMICONDUCTOR

Description

ABSOLUTE MAXIMUM CURRENT RATING PER CHARACTERISTIC: 25.00 AMPERES FORWARD CURRENT, DC
ABSOLUTE MAXIMUM VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 600.0 PEAK INVERSE VOLTAGE
CIRCUIT CONNECTION STYLE DESIGNATOR: 7 BRIDGE 1 PHASE
MATERIAL: GLASS
MOUNTING METHOD: TERMINAL
SPECIAL FEATURES: ENCAPSULATED; ELECTROSTATICALLY SENSITIVE; OP TEMP M65 TO P150 DEG C

152090

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961014412308

NSN

5961-01-441-2308

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152090

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961014412308

NSN

5961-01-441-2308

MFG

TECHNOLOGY DYNAMICS INC. DBA NOVA ELECTRIC

SW06PCR075

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961014412308

NSN

5961-01-441-2308

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SW06PCR075

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961014412308

NSN

5961-01-441-2308

MFG

IXYS LONG BEACH INC.

922323

TRANSISTOR

NSN, MFG P/N

5961014412848

NSN

5961-01-441-2848

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922323

TRANSISTOR

NSN, MFG P/N

5961014412848

NSN

5961-01-441-2848

MFG

FLUKE CORPORATION

Description

III END ITEM IDENTIFICATION: OSCILLOSCOPE E/I FSCM 89536
SPECIAL FEATURES: JUNCTION TYPE NPN; MATERIAL: SILICONE; TRANSITION FREQUENCY: 4GHZ

9339 199 10115

TRANSISTOR

NSN, MFG P/N

5961014412848

NSN

5961-01-441-2848

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9339 199 10115

TRANSISTOR

NSN, MFG P/N

5961014412848

NSN

5961-01-441-2848

MFG

FLUKE NEDERLAND BV

Description

III END ITEM IDENTIFICATION: OSCILLOSCOPE E/I FSCM 89536
SPECIAL FEATURES: JUNCTION TYPE NPN; MATERIAL: SILICONE; TRANSITION FREQUENCY: 4GHZ

BFG35

TRANSISTOR

NSN, MFG P/N

5961014412848

NSN

5961-01-441-2848

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BFG35

TRANSISTOR

NSN, MFG P/N

5961014412848

NSN

5961-01-441-2848

MFG

PHILIPS COMPONENTS

Description

III END ITEM IDENTIFICATION: OSCILLOSCOPE E/I FSCM 89536
SPECIAL FEATURES: JUNCTION TYPE NPN; MATERIAL: SILICONE; TRANSITION FREQUENCY: 4GHZ

MUR3060PT

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961014413529

NSN

5961-01-441-3529

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MUR3060PT

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961014413529

NSN

5961-01-441-3529

MFG

FREESCALE SEMICONDUCTOR INC.

Description

CURRENT RATING PER CHARACTERISTIC: 10.00 MICROAMPERES MAXIMUM REVERSE CURRENT, PEAK
FUNCTION FOR WHICH DESIGNED: RECTIFIER
MOUNTING METHOD: TERMINAL
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 3 PRINTED CIRCUIT
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 600.0 NOMINAL REPETITIVE PEAK REVERSE VOLTAGE

MR2406

TRANSISTOR

NSN, MFG P/N

5961014413530

NSN

5961-01-441-3530

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MR2406

TRANSISTOR

NSN, MFG P/N

5961014413530

NSN

5961-01-441-3530

MFG

FREESCALE SEMICONDUCTOR INC.

Description

CURRENT RATING PER CHARACTERISTIC: 25.00 MICROAMPERES MAXIMUM REVERSE CURRENT, PEAK
INCLOSURE MATERIAL: PLASTIC
MOUNTING METHOD: TERMINAL
SEMICONDUCTOR MATERIAL: SILICON
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 600.0 NOMINAL REPETITIVE PEAK REVERSE VOLTAGE

MUR 420

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961014413531

NSN

5961-01-441-3531

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MUR 420

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961014413531

NSN

5961-01-441-3531

MFG

FREESCALE SEMICONDUCTOR INC.

Description

CURRENT RATING PER CHARACTERISTIC: 10.00 MICROAMPERES MAXIMUM REVERSE CURRENT, PEAK
INCLOSURE MATERIAL: PLASTIC
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.210 INCHES MAXIMUM
OVERALL LENGTH: 0.380 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 200.0 NOMINAL REPETITIVE PEAK REVERSE VOLTAGE

SMU30N03-30L

TRANSISTOR

NSN, MFG P/N

5961014413532

NSN

5961-01-441-3532

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SMU30N03-30L

TRANSISTOR

NSN, MFG P/N

5961014413532

NSN

5961-01-441-3532

MFG

SILICONIX INCORPORATED D IV SILICONIX

Description

(NON-CORE DATA) CHANNEL POLARITY AND CONTROL TYPE: N-CHANNEL INSULATED GATE TYPE
CURRENT RATING PER CHARACTERISTIC: 6.00 AMPERES NOMINAL DRAIN CURRENT
INTERNAL CONFIGURATION: FIELD EFFECT
MOUNTING METHOD: TERMINAL
OVERALL HEIGHT: 2.380 INCHES MAXIMUM
OVERALL LENGTH: 6.350 INCHES MAXIMUM
OVERALL WIDTH: 6.220 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 50.0 WATTS MAXIMUM TOTAL DEVICE DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 3 PRINTED CIRCUIT
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 30.0 NOMINAL BREAKDOWN VOLTAGE, DRAIN-TO-SOURCE, WITH ALL OTHER TERMINALS SHORT-CIRCUITED TO SOURCE