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5961-01-421-7734
20 Products
152-5051-00
SEMICONDUCTOR DEVICES,UNITIZED
NSN, MFG P/N
5961014217734
NSN
5961-01-421-7734
152-5051-00
SEMICONDUCTOR DEVICES,UNITIZED
NSN, MFG P/N
5961014217734
NSN
5961-01-421-7734
MFG
TEKTRONIX INC. DBA TEKTRONIX
Description
SEMICONDUCTOR DEVICES,UNITIZED
Related Searches:
BAS56
SEMICONDUCTOR DEVICES,UNITIZED
NSN, MFG P/N
5961014217734
NSN
5961-01-421-7734
MFG
PHILIPS COMPONENTS
Description
SEMICONDUCTOR DEVICES,UNITIZED
Related Searches:
1N4747A
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961014217961
NSN
5961-01-421-7961
MFG
ELECTRONIC INDUSTRIES ASSOCIATION
Description
SPECIFICATION/STANDARD DATA: 80131-1N4747A PROFESSIONAL/INDUSTRIAL ASSOCIATION SPECIFICATION
Related Searches:
31-6034
TRANSISTOR
NSN, MFG P/N
5961014218030
NSN
5961-01-421-8030
MFG
TERMIFLEX CORP
Description
TRANSISTOR
Related Searches:
153974 ITEM 3
SEMICONDUCTOR DEVICE ASSEMBLY
NSN, MFG P/N
5961014218278
NSN
5961-01-421-8278
153974 ITEM 3
SEMICONDUCTOR DEVICE ASSEMBLY
NSN, MFG P/N
5961014218278
NSN
5961-01-421-8278
MFG
ALTISSIMO AIMONE & C. SPA
Description
MAJOR COMPONENTS: POWER RECTIFIERS 6
Related Searches:
158329
SEMICONDUCTOR DEVICE ASSEMBLY
NSN, MFG P/N
5961014218278
NSN
5961-01-421-8278
MFG
FINCANTIERI MARINE SYSTEMS NORTH AMERICA INC.
Description
MAJOR COMPONENTS: POWER RECTIFIERS 6
Related Searches:
1N3911
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961014221535
NSN
5961-01-422-1535
MFG
MYERS POWER PRODUCTS INC. DBA MYERS/ABACUS DIV MYERS/ABACUS
Description
SEMICONDUCTOR DEVICE,DIODE
Related Searches:
MRF6604HXV
TRANSISTOR
NSN, MFG P/N
5961014222321
NSN
5961-01-422-2321
MFG
FREESCALE SEMICONDUCTOR INC.
Description
TRANSISTOR
Related Searches:
T235A444-1
TRANSISTOR
NSN, MFG P/N
5961014222321
NSN
5961-01-422-2321
MFG
TELEPHONICS CORPORATION DBA COMMUNICATIONS SYSTEMS DIVISION DIV COMMUNICATIONS SYSTEMS DIVISION
Description
TRANSISTOR
Related Searches:
917257
TRANSISTOR
NSN, MFG P/N
5961014222378
NSN
5961-01-422-2378
MFG
FLUKE CORPORATION
Description
INCLOSURE MATERIAL: PLASTIC
MOUNTING METHOD: TERMINAL
OVERALL LENGTH: 3.0 MILLIMETERS NOMINAL
Related Searches:
BF990A
TRANSISTOR
NSN, MFG P/N
5961014222378
NSN
5961-01-422-2378
MFG
NATIONAL SEMICONDUCTOR CORPORATION
Description
INCLOSURE MATERIAL: PLASTIC
MOUNTING METHOD: TERMINAL
OVERALL LENGTH: 3.0 MILLIMETERS NOMINAL
Related Searches:
138052
TRANSISTOR
NSN, MFG P/N
5961014222429
NSN
5961-01-422-2429
MFG
FLUKE CORPORATION
Description
INCLOSURE MATERIAL: PLASTIC
MOUNTING METHOD: TERMINAL
OVERALL LENGTH: 3.0 MILLIMETERS NOMINAL
TERMINAL TYPE AND QUANTITY: 3 UNINSULATED WIRE LEAD
Related Searches:
BFR31
TRANSISTOR
NSN, MFG P/N
5961014222429
NSN
5961-01-422-2429
MFG
NATIONAL SEMICONDUCTOR CORPORATION
Description
INCLOSURE MATERIAL: PLASTIC
MOUNTING METHOD: TERMINAL
OVERALL LENGTH: 3.0 MILLIMETERS NOMINAL
TERMINAL TYPE AND QUANTITY: 3 UNINSULATED WIRE LEAD
Related Searches:
862511
TRANSISTOR
NSN, MFG P/N
5961014222437
NSN
5961-01-422-2437
MFG
FLUKE CORPORATION
Description
INCLOSURE MATERIAL: PLASTIC
OVERALL LENGTH: 3.0 MILLIMETERS NOMINAL
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: NPN
Related Searches:
BC848
TRANSISTOR
NSN, MFG P/N
5961014222437
NSN
5961-01-422-2437
MFG
NATIONAL SEMICONDUCTOR CORPORATION
Description
INCLOSURE MATERIAL: PLASTIC
OVERALL LENGTH: 3.0 MILLIMETERS NOMINAL
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: NPN
Related Searches:
BC848A
TRANSISTOR
NSN, MFG P/N
5961014222437
NSN
5961-01-422-2437
MFG
FAIRCHILD SEMICONDUCTOR CORP
Description
INCLOSURE MATERIAL: PLASTIC
OVERALL LENGTH: 3.0 MILLIMETERS NOMINAL
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: NPN
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5322 130 33671
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961014222439
NSN
5961-01-422-2439
5322 130 33671
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961014222439
NSN
5961-01-422-2439
MFG
PHILIPS ELECTRONICS NEDERLAND BV
Description
FUNCTION FOR WHICH DESIGNED: ZENER DIODE
INCLOSURE MATERIAL: PLASTIC
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: SOT-23
MOUNTING METHOD: TERMINAL
OVERALL HEIGHT: 1.1 MILLIMETERS MAXIMUM
OVERALL LENGTH: 3.0 MILLIMETERS MAXIMUM
OVERALL WIDTH: 2.5 MILLIMETERS MAXIMUM
POWER RATING PER CHARACTERISTIC: 350.0 MILLIWATTS NOMINAL TOTAL DEVICE DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 3 PRINTED CIRCUIT
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 6.2 NOMINAL NOMINAL REGULATOR VOLTAGE
VOLTAGE TOLERANCE IN PERCENT: -5.0 TO 5.0
Related Searches:
878702
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961014222439
NSN
5961-01-422-2439
MFG
FLUKE CORPORATION
Description
FUNCTION FOR WHICH DESIGNED: ZENER DIODE
INCLOSURE MATERIAL: PLASTIC
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: SOT-23
MOUNTING METHOD: TERMINAL
OVERALL HEIGHT: 1.1 MILLIMETERS MAXIMUM
OVERALL LENGTH: 3.0 MILLIMETERS MAXIMUM
OVERALL WIDTH: 2.5 MILLIMETERS MAXIMUM
POWER RATING PER CHARACTERISTIC: 350.0 MILLIWATTS NOMINAL TOTAL DEVICE DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 3 PRINTED CIRCUIT
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 6.2 NOMINAL NOMINAL REGULATOR VOLTAGE
VOLTAGE TOLERANCE IN PERCENT: -5.0 TO 5.0
Related Searches:
BZX84-C6V2
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961014222439
NSN
5961-01-422-2439
BZX84-C6V2
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961014222439
NSN
5961-01-422-2439
MFG
PHILIPS COMPONENTS
Description
FUNCTION FOR WHICH DESIGNED: ZENER DIODE
INCLOSURE MATERIAL: PLASTIC
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: SOT-23
MOUNTING METHOD: TERMINAL
OVERALL HEIGHT: 1.1 MILLIMETERS MAXIMUM
OVERALL LENGTH: 3.0 MILLIMETERS MAXIMUM
OVERALL WIDTH: 2.5 MILLIMETERS MAXIMUM
POWER RATING PER CHARACTERISTIC: 350.0 MILLIWATTS NOMINAL TOTAL DEVICE DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 3 PRINTED CIRCUIT
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 6.2 NOMINAL NOMINAL REGULATOR VOLTAGE
VOLTAGE TOLERANCE IN PERCENT: -5.0 TO 5.0
Related Searches:
BZX84C6V2
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961014222439
NSN
5961-01-422-2439
MFG
FAIRCHILD SEMICONDUCTOR CORP
Description
FUNCTION FOR WHICH DESIGNED: ZENER DIODE
INCLOSURE MATERIAL: PLASTIC
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: SOT-23
MOUNTING METHOD: TERMINAL
OVERALL HEIGHT: 1.1 MILLIMETERS MAXIMUM
OVERALL LENGTH: 3.0 MILLIMETERS MAXIMUM
OVERALL WIDTH: 2.5 MILLIMETERS MAXIMUM
POWER RATING PER CHARACTERISTIC: 350.0 MILLIWATTS NOMINAL TOTAL DEVICE DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 3 PRINTED CIRCUIT
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 6.2 NOMINAL NOMINAL REGULATOR VOLTAGE
VOLTAGE TOLERANCE IN PERCENT: -5.0 TO 5.0
