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5961-01-466-3188
20 Products
1209124-203
TRANSISTOR
NSN, MFG P/N
5961014663188
NSN
5961-01-466-3188
MFG
LOCKHEED MARTIN CORPORATION DBA LOCKHEED MARTIN MS2
Description
CURRENT RATING PER CHARACTERISTIC: 13.50 AMPERES MAXIMUM COLLECTOR CURRENT, DC AND 20.00 MILLIAMPERES MAXIMUM COLLECTOR CUTOFF CURRENT, DC, WITH BASE SHORT-CIRCUITED TO EMITTER
ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE: BASE
III END ITEM IDENTIFICATION: AN/FPS-124
INCLOSURE MATERIAL: CERAMIC AND METAL
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 250.0 DEG CELSIUS JUNCTION
MOUNTING FACILITY QUANTITY: 2
MOUNTING METHOD: SLOT
OVERALL HEIGHT: 0.230 INCHES MAXIMUM
OVERALL LENGTH: 0.910 INCHES MAXIMUM
OVERALL WIDTH: 0.407 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 270.0 WATTS MAXIMUM TOTAL DEVICE DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 2 RIBBON AND 1 PIN
TRANSFER RATIO: 15.0 MINIMUM STATIC FORWARD CURRENT TRANSFER RATIO, COMMON-EMITTER
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 65.0 MINIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-BASE, EMITTER OPEN AND 65.0 MINIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-EMITTER, WITH BASE SHORT-CIRCUITED TO
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AM1214-100
TRANSISTOR
NSN, MFG P/N
5961014663188
NSN
5961-01-466-3188
MFG
STMICROELECTRONICS INC
Description
CURRENT RATING PER CHARACTERISTIC: 13.50 AMPERES MAXIMUM COLLECTOR CURRENT, DC AND 20.00 MILLIAMPERES MAXIMUM COLLECTOR CUTOFF CURRENT, DC, WITH BASE SHORT-CIRCUITED TO EMITTER
ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE: BASE
III END ITEM IDENTIFICATION: AN/FPS-124
INCLOSURE MATERIAL: CERAMIC AND METAL
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 250.0 DEG CELSIUS JUNCTION
MOUNTING FACILITY QUANTITY: 2
MOUNTING METHOD: SLOT
OVERALL HEIGHT: 0.230 INCHES MAXIMUM
OVERALL LENGTH: 0.910 INCHES MAXIMUM
OVERALL WIDTH: 0.407 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 270.0 WATTS MAXIMUM TOTAL DEVICE DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 2 RIBBON AND 1 PIN
TRANSFER RATIO: 15.0 MINIMUM STATIC FORWARD CURRENT TRANSFER RATIO, COMMON-EMITTER
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 65.0 MINIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-BASE, EMITTER OPEN AND 65.0 MINIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-EMITTER, WITH BASE SHORT-CIRCUITED TO
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A3250044-1
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961014663789
NSN
5961-01-466-3789
A3250044-1
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961014663789
NSN
5961-01-466-3789
MFG
US ARMY COMMUNICATIONS & ELECTRONICS MATERIEL READINESS COMMAND LOGISTICS ENGINEERING DIR
Description
III END ITEM IDENTIFICATION: 5895014441218,RADIO SYSTEM,SINGLE CHANNEL GROUND & AIRBORNE-V(SINCGARS)
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UFR7130R
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961014663789
NSN
5961-01-466-3789
MFG
MICROSEMI CORP-COLORADO
Description
III END ITEM IDENTIFICATION: 5895014441218,RADIO SYSTEM,SINGLE CHANNEL GROUND & AIRBORNE-V(SINCGARS)
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90SQ045
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961014663791
NSN
5961-01-466-3791
MFG
INTERNATIONAL RECTIFIER CORP ORATION USE CAGE CODE 81483 FOR CATALOGING.
Description
III END ITEM IDENTIFICATION: RADIO SYSTEM,SINGLE CHANNEL GROUND & AIRBORNE-V(SINCGARS)
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A3167940-1
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961014663791
NSN
5961-01-466-3791
A3167940-1
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961014663791
NSN
5961-01-466-3791
MFG
US ARMY COMMUNICATIONS & ELECTRONICS MATERIEL READINESS COMMAND LOGISTICS ENGINEERING DIR
Description
III END ITEM IDENTIFICATION: RADIO SYSTEM,SINGLE CHANNEL GROUND & AIRBORNE-V(SINCGARS)
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MSP845
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961014663791
NSN
5961-01-466-3791
MFG
MICROSEMI CORP-COLORADO
Description
III END ITEM IDENTIFICATION: RADIO SYSTEM,SINGLE CHANNEL GROUND & AIRBORNE-V(SINCGARS)
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SMBG6.0CA
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961014663814
NSN
5961-01-466-3814
MFG
MICROSEMI CORP.-SCOTTSDALE DBA MICROSEMI
Description
CURRENT RATING PER CHARACTERISTIC: 44.00 AMPERES MAXIMUM COLLECTOR CURRENT, INSTANTANEOUS
III END ITEM IDENTIFICATION: KOK-22AE/IFSCM12954
INCLOSURE MATERIAL: METAL
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: -65.0 DEG CELSIUS CASE AND 175.0 DEG CELSIUS CASE
MOUNTING FACILITY QUANTITY: 2
MOUNTING METHOD: BRACKET
OVERALL HEIGHT: 0.095 MILLIMETERS MAXIMUM
OVERALL LENGTH: 0.255 MILLIMETERS MAXIMUM
OVERALL WIDTH: 0.155 MILLIMETERS MAXIMUM
POWER RATING PER CHARACTERISTIC: 600.0 WATTS MAXIMUM TOTAL NONREACTIVE POWER INPUT TO ALL TERMINALS
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL LENGTH: 0.180 MILLIMETERS MAXIMUM
TERMINAL TYPE AND QUANTITY: 2 CASE
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 9.0 MAXIMUM REVERSE BREAKDOWN VOLTAGE, DC AND 50.0 MAXIMUM WORKING PEAK REVERSE VOLTAGE, MAXIMUM PEAK TOTAL VALUE, GATE TERMINAL OPEN-CIRCUITED
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JANTX1N4977US
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961014663908
NSN
5961-01-466-3908
JANTX1N4977US
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961014663908
NSN
5961-01-466-3908
MFG
MILITARY SPECIFICATIONS PROMULGATED BY MILITARY DEPARTMENTS/AGENCIES UNDER AUTHORITY OF DEFENSE STANDARDIZATION MANUAL 4120 3-M
Description
CURRENT RATING PER CHARACTERISTIC: 76.00 AMPERES MAXIMUM VOLTAGE REGULATOR DIODE CURRENT
DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: JANTX1N4977US
III END ITEM IDENTIFICATION: MISSILE SYSTEMS,NATO SEA SPARROW E/IFSCM81349
INCLOSURE MATERIAL: GLASS
MANUFACTURERS CODE: 81349
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: -65.0 DEG CELSIUS CASE AND 175.0 DEG CELSIUS CASE
MOUNTING FACILITY QUANTITY: 2
MOUNTING METHOD: TERMINAL
NON-DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: MIL-PRF-19500/356E
OVERALL LENGTH: 70.990 MILLIMETERS MAXIMUM
POWER RATING PER CHARACTERISTIC: 5.0 WATTS MAXIMUM TOTAL NONREACTIVE POWER INPUT TO ALL TERMINALS
SEMICONDUCTOR MATERIAL: SILICON
SPEC/STD CONTROLLING DATA:
SPECIFICATION/STANDARD DATA: 81349-MIL-S-19500/356 GOVERNMENT SPECIFICATION
TERMINAL CIRCLE DIAMETER: 4.700 MILLIMETERS MAXIMUM
TERMINAL LENGTH: 4.950 MILLIMETERS MAXIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 65.1 MAXIMUM REG
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6N151PC68
TRANSISTOR
NSN, MFG P/N
5961014664042
NSN
5961-01-466-4042
MFG
DRS POWER & CONTROL TECHNOLOGIES INC.
Description
CRITICALITY CODE JUSTIFICATION: ZZZY
DESIGN CONTROL REFERENCE: KDL165
MANUFACTURERS CODE: 06RP6
REFERENCE NUMBER DIFFERENTIATING CHARACTERISTICS: MATERIAL WILL BE IN ACCORDANCE WITH NAVAL INVENTORY CONTROL POINT, MECHANICSBURG, ACTIVITY HX QUALITY CONTROL, MANUFACTURING AND TESTING SPECIFICATIONS
THE MANUFACTURERS DATA:
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12347229
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961014664099
NSN
5961-01-466-4099
MFG
U S ARMY TANK AUTOMOTIVE COMMAND AMSTA-IM-MM
Description
III END ITEM IDENTIFICATION: 2350013285964E/IFSCM19207
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DLTS-17A
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961014664099
NSN
5961-01-466-4099
MFG
MICROSEMI CORP.-SCOTTSDALE DBA MICROSEMI
Description
III END ITEM IDENTIFICATION: 2350013285964E/IFSCM19207
Related Searches:
DLZ-17A
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961014664099
NSN
5961-01-466-4099
MFG
GENERAL SEMICONDUCTOR INDUSTRIES INC
Description
III END ITEM IDENTIFICATION: 2350013285964E/IFSCM19207
Related Searches:
C6424
RECTIFIER,SEMICONDUCTOR DEVICE
NSN, MFG P/N
5961014664602
NSN
5961-01-466-4602
MFG
HOWELL INSTRUMENTS INC .
Description
III END ITEM IDENTIFICATION: DISPLAY,TACH,POWER SUPPLY ENGINE LIFE RECORDER
Related Searches:
206656-1
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961014667199
NSN
5961-01-466-7199
MFG
TRANSISTOR DEVICES INC FLORIDA DIV
Description
CAPACITANCE RATING IN PICOFARADS: 150.0 MAXIMUM
CURRENT RATING PER CHARACTERISTIC: 15.00 AMPERES MAXIMUM AVERAGE ON-STATE CURRENT, 180 DEGREES CONDUCTION ANGLE, AVERAGE OVER A FULL 60-HZ CYCLE AND 60.00 AMPERES MAXIMUM FORWARD CURRENT, REPETITIVE, MAXIMUM PEAK TOTAL VALUE
III END ITEM IDENTIFICATION: E/IFSCMIR SENSOR ASSEMBLY
INCLOSURE MATERIAL: METAL
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: -65.0 DEG CELSIUS CASE AND 175.0 DEG CELSIUS CASE
MOUNTING FACILITY QUANTITY: 1
MOUNTING METHOD: THREADED HOLE
OVERALL LENGTH: 0.800 INCHES MAXIMUM
OVERALL WIDTH: 0.437 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 41.0 WATTS MAXIMUM TOTAL NONREACTIVE POWER INPUT TO ALL TERMINALS
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL LENGTH: 0.600 INCHES MAXIMUM
TERMINAL TYPE AND QUANTITY: 1 UNTHREADED HOLE
TEST DATA DOCUMENT: 0AF43-206656 SPECIFICATION
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 500.0 MAXIMUM REVERSE VOLTAGE, PEAK AND 500.0 MAXIMUM REVERSE VOLTAGE, INSTANTANEOUS AND 350
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D8026/TX
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961014667199
NSN
5961-01-466-7199
MFG
MICROSEMI CORP-COLORADO
Description
CAPACITANCE RATING IN PICOFARADS: 150.0 MAXIMUM
CURRENT RATING PER CHARACTERISTIC: 15.00 AMPERES MAXIMUM AVERAGE ON-STATE CURRENT, 180 DEGREES CONDUCTION ANGLE, AVERAGE OVER A FULL 60-HZ CYCLE AND 60.00 AMPERES MAXIMUM FORWARD CURRENT, REPETITIVE, MAXIMUM PEAK TOTAL VALUE
III END ITEM IDENTIFICATION: E/IFSCMIR SENSOR ASSEMBLY
INCLOSURE MATERIAL: METAL
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: -65.0 DEG CELSIUS CASE AND 175.0 DEG CELSIUS CASE
MOUNTING FACILITY QUANTITY: 1
MOUNTING METHOD: THREADED HOLE
OVERALL LENGTH: 0.800 INCHES MAXIMUM
OVERALL WIDTH: 0.437 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 41.0 WATTS MAXIMUM TOTAL NONREACTIVE POWER INPUT TO ALL TERMINALS
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL LENGTH: 0.600 INCHES MAXIMUM
TERMINAL TYPE AND QUANTITY: 1 UNTHREADED HOLE
TEST DATA DOCUMENT: 0AF43-206656 SPECIFICATION
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 500.0 MAXIMUM REVERSE VOLTAGE, PEAK AND 500.0 MAXIMUM REVERSE VOLTAGE, INSTANTANEOUS AND 350
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SDR6058/TX
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961014667199
NSN
5961-01-466-7199
SDR6058/TX
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961014667199
NSN
5961-01-466-7199
MFG
SOLID STATE DEVICES INC.
Description
CAPACITANCE RATING IN PICOFARADS: 150.0 MAXIMUM
CURRENT RATING PER CHARACTERISTIC: 15.00 AMPERES MAXIMUM AVERAGE ON-STATE CURRENT, 180 DEGREES CONDUCTION ANGLE, AVERAGE OVER A FULL 60-HZ CYCLE AND 60.00 AMPERES MAXIMUM FORWARD CURRENT, REPETITIVE, MAXIMUM PEAK TOTAL VALUE
III END ITEM IDENTIFICATION: E/IFSCMIR SENSOR ASSEMBLY
INCLOSURE MATERIAL: METAL
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: -65.0 DEG CELSIUS CASE AND 175.0 DEG CELSIUS CASE
MOUNTING FACILITY QUANTITY: 1
MOUNTING METHOD: THREADED HOLE
OVERALL LENGTH: 0.800 INCHES MAXIMUM
OVERALL WIDTH: 0.437 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 41.0 WATTS MAXIMUM TOTAL NONREACTIVE POWER INPUT TO ALL TERMINALS
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL LENGTH: 0.600 INCHES MAXIMUM
TERMINAL TYPE AND QUANTITY: 1 UNTHREADED HOLE
TEST DATA DOCUMENT: 0AF43-206656 SPECIFICATION
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 500.0 MAXIMUM REVERSE VOLTAGE, PEAK AND 500.0 MAXIMUM REVERSE VOLTAGE, INSTANTANEOUS AND 350
Related Searches:
353-5056-020
SEMICONDUCTOR DEVICE,THYRISTOR
NSN, MFG P/N
5961014667633
NSN
5961-01-466-7633
353-5056-020
SEMICONDUCTOR DEVICE,THYRISTOR
NSN, MFG P/N
5961014667633
NSN
5961-01-466-7633
MFG
CONTINENTAL ELECTRONICS CORPORATION
Description
FIELD FORCE EFFECT TYPE: MAGNETIC FIELD
FUNCTION FOR WHICH DESIGNED: SWITCHING
POWER RATING PER CHARACTERISTIC: 60.0 WATTS MAXIMUM AVERAGE GATE POWER-FORWARD
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 1200.0 MINIMUM REVERSE VOLTAGE, PEAK
Related Searches:
JAN1N78CR
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961014668606
NSN
5961-01-466-8606
MFG
MILITARY SPECIFICATIONS PROMULGATED BY MILITARY DEPARTMENTS/AGENCIES UNDER AUTHORITY OF DEFENSE STANDARDIZATION MANUAL 4120 3-M
Description
DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: JAN1N78CR
INCLOSURE MATERIAL: METAL
MANUFACTURERS CODE: 81349
MOUNTING METHOD: THREADED STUD
NOMINAL THREAD SIZE: 0.250 INCHES
NON-DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: MIL-S-19500/130
OVERALL LENGTH: 0.734 INCHES MINIMUM AND 0.766 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
SPEC/STD CONTROLLING DATA:
TERMINAL TYPE AND QUANTITY: 1 THREADED STUD AND 1 TAB, SOLDER LUG
THREAD SERIES DESIGNATOR: UNF
Related Searches:
850-302-001
TRANSISTOR
NSN, MFG P/N
5961014668775
NSN
5961-01-466-8775
MFG
PARKER-HANNIFIN CORPORATION DBA CUSTOMER SUPPORT MILITARY DIVISION DIV CUSTOMER SUPPORT OPERATIONS
Description
III END ITEM IDENTIFICATION: E/IFSCMC-17A ACFT
