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5961-01-468-8399
20 Products
382497-1
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961014688399
NSN
5961-01-468-8399
MFG
RAYTHEON COMPANY DBA RAYTHEON
Description
III END ITEM IDENTIFICATION: E/I FSCM ARC-164 APACH
Related Searches:
MBR0520L
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961014688399
NSN
5961-01-468-8399
MFG
FREESCALE SEMICONDUCTOR INC.
Description
III END ITEM IDENTIFICATION: E/I FSCM ARC-164 APACH
Related Searches:
717801314-002
TRANSISTOR
NSN, MFG P/N
5961014689605
NSN
5961-01-468-9605
MFG
LOCKHEED MARTIN CORPORATION DBA LOCKHEED MARTIN
Description
III END ITEM IDENTIFICATION: ACCESSORY PKG
Related Searches:
JAN2N5955
TRANSISTOR
NSN, MFG P/N
5961014690533
NSN
5961-01-469-0533
MFG
MILITARY SPECIFICATIONS PROMULGATED BY MILITARY DEPARTMENTS/AGENCIES UNDER AUTHORITY OF DEFENSE STANDARDIZATION MANUAL 4120 3-M
Description
CURRENT RATING PER CHARACTERISTIC: 6.00 AMPERES MAXIMUM COLLECTOR CURRENT, DC AND 2.00 AMPERES MAXIMUM BASE CURRENT, DC
DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: JAN2N5955
ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE: COLLECTOR
FEATURES PROVIDED: HERMETICALLY SEALED CASE
III END ITEM IDENTIFICATION: 662-15-064-3505 TEST SET ELECTRONICS SYSTEMS X925-501
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: JUNCTION CONTACT
MANUFACTURERS CODE: 81349
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 200.0 DEG CELSIUS JUNCTION
MOUNTING FACILITY QUANTITY: 2
MOUNTING METHOD: UNTHREADED HOLE
NON-DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: MIL-PRF-19500
OVERALL DIAMETER: 0.620 INCHES MAXIMUM
OVERALL LENGTH: 0.340 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 40.0 WATTS MAXIMUM COLLECTOR POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPEC/STD CONTROLLING DATA:
SPECIAL FEATURES: SAME AS 2N5955 BUT WITH DIFFERENT QUALITY LEVEL; JUNCTION PATTERN ARRANGEMENT: PNP
TE
Related Searches:
JAN1N2812B
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961014690535
NSN
5961-01-469-0535
JAN1N2812B
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961014690535
NSN
5961-01-469-0535
MFG
MILITARY SPECIFICATIONS PROMULGATED BY MILITARY DEPARTMENTS/AGENCIES UNDER AUTHORITY OF DEFENSE STANDARDIZATION MANUAL 4120 3-M
Description
CURRENT RATING PER CHARACTERISTIC: 890.00 MILLIAMPERES MAXIMUM MAXIMUM REVERSE SURGE CURRENT
DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: JAN1N2812B
FEATURES PROVIDED: HERMETICALLY SEALED CASE
III END ITEM IDENTIFICATION: 6625-15-064-3505 TEST SET ELECTRONICS SYSTEMS X925-501
INCLOSURE MATERIAL: METAL
MANUFACTURERS CODE: 81349
MOUNTING FACILITY QUANTITY: 2
MOUNTING METHOD: UNTHREADED HOLE
NON-DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: MIL-PRF-19500
OVERALL DIAMETER: 1.325 INCHES NOMINAL
OVERALL LENGTH: 0.410 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 50.0 WATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPEC/STD CONTROLLING DATA:
SPECIAL FEATURES: SAME AS 1N2812B BUT WITH DIFFERENT QUALITY LEVEL
TERMINAL TYPE AND QUANTITY: 2 PIN
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 14.0 MAXIMUM NOMINAL REGULATOR VOLTAGE
Related Searches:
JAN2N3502
TRANSISTOR
NSN, MFG P/N
5961014690536
NSN
5961-01-469-0536
MFG
MILITARY SPECIFICATIONS PROMULGATED BY MILITARY DEPARTMENTS/AGENCIES UNDER AUTHORITY OF DEFENSE STANDARDIZATION MANUAL 4120 3-M
Description
CURRENT RATING PER CHARACTERISTIC: 600.00 MILLIAMPERES MAXIMUM COLLECTOR CURRENT, DC
DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: JAN2N3502
ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE: COLLECTOR
FEATURES PROVIDED: HERMETICALLY SEALED CASE
III END ITEM IDENTIFICATION: 6625-15-064-3505 TEST SET ELECTRONICS SYSTEMS X925-501
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: JUNCTION CONTACT
MANUFACTURERS CODE: 81349
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 200.0 DEG CELSIUS JUNCTION
MOUNTING METHOD: TERMINAL
NON-DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: MIL-PRF-19500
OVERALL DIAMETER: 0.225 INCHES MINIMUM AND 0.370 INCHES MAXIMUM
OVERALL LENGTH: 0.240 INCHES MINIMUM AND 0.260 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 700.0 MILLIWATTS MAXIMUM COLLECTOR POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPEC/STD CONTROLLING DATA:
SPECIAL FEATURES: SAME AS 2N3502 BUT DIFFERENT QUALITY LEVEL; JUNCTION PATTERN ARRANGEMENT: PNP
TERMINAL CIRCLE DIAMETER:
Related Searches:
141590PC37
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961014691153
NSN
5961-01-469-1153
141590PC37
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961014691153
NSN
5961-01-469-1153
MFG
LOCKHEED MARTIN CORPORATION DBA LOCKHEED MARTIN DIV MISSILES AND FIRE CONTROL - ARCHBALD
Description
CRITICALITY CODE JUSTIFICATION: FEAT
MANUFACTURERS CODE: 81349
NON-DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: JANTX1N3673AR
SPEC/STD CONTROLLING DATA:
SPECIAL FEATURES: MATERIAL WILL BE IN ACCORDANCE WITH NAVICP ACTIVITY HX QUALITY CONTROL MANUFACTURING AND TESTING SPECIFICATIONS
Related Searches:
JANTX1N3673AR
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961014691153
NSN
5961-01-469-1153
JANTX1N3673AR
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961014691153
NSN
5961-01-469-1153
MFG
MILITARY SPECIFICATIONS PROMULGATED BY MILITARY DEPARTMENTS/AGENCIES UNDER AUTHORITY OF DEFENSE STANDARDIZATION MANUAL 4120 3-M
Description
CRITICALITY CODE JUSTIFICATION: FEAT
MANUFACTURERS CODE: 81349
NON-DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: JANTX1N3673AR
SPEC/STD CONTROLLING DATA:
SPECIAL FEATURES: MATERIAL WILL BE IN ACCORDANCE WITH NAVICP ACTIVITY HX QUALITY CONTROL MANUFACTURING AND TESTING SPECIFICATIONS
Related Searches:
141361
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961014691190
NSN
5961-01-469-1190
MFG
LOCKHEED MARTIN CORPORATION DBA LOCKHEED MARTIN DIV MISSILES AND FIRE CONTROL - ARCHBALD
Description
CRITICALITY CODE JUSTIFICATION: ZZZY
DESIGN CONTROL REFERENCE: 141361
MANUFACTURERS CODE: 94271
REFERENCE NUMBER DIFFERENTIATING CHARACTERISTICS: MATERIAL WILL BE IN ACCORDANCE WITH NAVICP ACTIVITY HX QUALITY CONTROL, MANUFACTURING AND TESTING SPECIFICATIONS
THE MANUFACTURERS DATA:
Related Searches:
141362
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961014691192
NSN
5961-01-469-1192
MFG
LOCKHEED MARTIN CORPORATION DBA LOCKHEED MARTIN DIV MISSILES AND FIRE CONTROL - ARCHBALD
Description
CRITICALITY CODE JUSTIFICATION: ZZZY
DESIGN CONTROL REFERENCE: 141362
MANUFACTURERS CODE: 94271
REFERENCE NUMBER DIFFERENTIATING CHARACTERISTICS: MATERIAL WILL BE IN ACCORDANCE WITH NAVICP ACTIVITY HX QUALITY CONTROL, MANUFACTURING AND TESTING SPECIFICATIONS
THE MANUFACTURERS DATA:
Related Searches:
JAN2N3054
TRANSISTOR
NSN, MFG P/N
5961014691384
NSN
5961-01-469-1384
MFG
MILITARY SPECIFICATIONS PROMULGATED BY MILITARY DEPARTMENTS/AGENCIES UNDER AUTHORITY OF DEFENSE STANDARDIZATION MANUAL 4120 3-M
Description
CURRENT RATING PER CHARACTERISTIC: 2.00 AMPERES MAXIMUM BASE CURRENT, DC AND 4.00 AMPERES MAXIMUM COLLECTOR CURRENT, DC
DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: JAN2N3054
ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE: COLLECTOR
FEATURES PROVIDED: HERMETICALLY SEALED CASE
III END ITEM IDENTIFICATION: 6625-15-064-3505 TEST SET ELECTORNICS SYSTEMS X925-501
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: JUNCTION CONTACT
MANUFACTURERS CODE: 81349
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 200.0 DEG CELSIUS CASE
MOUNTING FACILITY QUANTITY: 2
MOUNTING METHOD: UNTHREADED HOLE
NON-DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: MIL-PRF-19500
OVERALL DIAMETER: 0.500 INCHES MAXIMUM
OVERALL LENGTH: 0.340 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 25.0 WATTS MAXIMUM COLLECTOR POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPEC/STD CONTROLLING DATA:
SPECIAL FEATURES: SAME AS 2N3054 BUT DIFFERENT QUALITY LEVEL; JUNCTION PATTERN ARRANGEMENT: NPN
TERMINAL T
Related Searches:
JAN1N4743A
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961014691385
NSN
5961-01-469-1385
JAN1N4743A
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961014691385
NSN
5961-01-469-1385
MFG
MILITARY SPECIFICATIONS PROMULGATED BY MILITARY DEPARTMENTS/AGENCIES UNDER AUTHORITY OF DEFENSE STANDARDIZATION MANUAL 4120 3-M
Description
CURRENT RATING PER CHARACTERISTIC: 19.00 MILLIAMPERES MAXIMUM MAXIMUM REVERSE SURGE CURRENT
DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: JAN1N4743A
FEATURES PROVIDED: HERMETICALLY SEALED CASE
III END ITEM IDENTIFICATION: 6625-15-064-3505 TEST SET ELECTRONICS SYSTEMS X925-501
INCLOSURE MATERIAL: GLASS AND METAL
MANUFACTURERS CODE: 81349
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 175.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
NON-DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: MIL-PRF-19500
OVERALL DIAMETER: 0.200 INCHES NOMINAL
OVERALL LENGTH: 0.375 INCHES NOMINAL
POWER RATING PER CHARACTERISTIC: 1.0 WATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPEC/STD CONTROLLING DATA:
SPECIAL FEATURES: SAME AS 1N4743A BUT WITH DIFFERENT QUALITY LEVEL
TERMINAL LENGTH: 0.200 INCHES NOMINAL
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 13.0 MAXIMUM NOMINAL REGULATOR VOLTAGE
Related Searches:
5R4810-069-0001
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961014691499
NSN
5961-01-469-1499
5R4810-069-0001
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961014691499
NSN
5961-01-469-1499
MFG
HAMILTON SUNDSTRAND CORPORATION
Description
III END ITEM IDENTIFICATION: F-18 E/F
INCLOSURE MATERIAL: GLASS
MANUFACTURERS CODE: 73030
MFR SOURCE CONTROLLING REFERENCE: 5R4810-069-0001
MOUNTING METHOD: TERMINAL
OVERALL LENGTH: 1.032 INCHES MINIMUM AND 1.132 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
SPEC/STD CONTROLLING DATA:
SPECIAL FEATURES: SEMICONDUCTOR,DIODE-SILICON RECTIFIER,SCHOTTKY, 45V
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 45.0 MINIMUM REPETITIVE PEAK REVERSE VOLTAGE
Related Searches:
SMC50946
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961014691499
NSN
5961-01-469-1499
MFG
NATEL ENGINEERING COMPANY INC . DBA POWERCUBE DIV NATEL CHATSWORTH DIVISION
Description
III END ITEM IDENTIFICATION: F-18 E/F
INCLOSURE MATERIAL: GLASS
MANUFACTURERS CODE: 73030
MFR SOURCE CONTROLLING REFERENCE: 5R4810-069-0001
MOUNTING METHOD: TERMINAL
OVERALL LENGTH: 1.032 INCHES MINIMUM AND 1.132 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
SPEC/STD CONTROLLING DATA:
SPECIAL FEATURES: SEMICONDUCTOR,DIODE-SILICON RECTIFIER,SCHOTTKY, 45V
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 45.0 MINIMUM REPETITIVE PEAK REVERSE VOLTAGE
Related Searches:
SPD1023
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961014691499
NSN
5961-01-469-1499
MFG
SILICON TRANSISTOR CORP SUB OF BBF INC
Description
III END ITEM IDENTIFICATION: F-18 E/F
INCLOSURE MATERIAL: GLASS
MANUFACTURERS CODE: 73030
MFR SOURCE CONTROLLING REFERENCE: 5R4810-069-0001
MOUNTING METHOD: TERMINAL
OVERALL LENGTH: 1.032 INCHES MINIMUM AND 1.132 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
SPEC/STD CONTROLLING DATA:
SPECIAL FEATURES: SEMICONDUCTOR,DIODE-SILICON RECTIFIER,SCHOTTKY, 45V
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 45.0 MINIMUM REPETITIVE PEAK REVERSE VOLTAGE
Related Searches:
SSR069
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961014691499
NSN
5961-01-469-1499
MFG
SOLID STATE DEVICES INC.
Description
III END ITEM IDENTIFICATION: F-18 E/F
INCLOSURE MATERIAL: GLASS
MANUFACTURERS CODE: 73030
MFR SOURCE CONTROLLING REFERENCE: 5R4810-069-0001
MOUNTING METHOD: TERMINAL
OVERALL LENGTH: 1.032 INCHES MINIMUM AND 1.132 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
SPEC/STD CONTROLLING DATA:
SPECIAL FEATURES: SEMICONDUCTOR,DIODE-SILICON RECTIFIER,SCHOTTKY, 45V
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 45.0 MINIMUM REPETITIVE PEAK REVERSE VOLTAGE
Related Searches:
5R4810-067-0001
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961014691524
NSN
5961-01-469-1524
5R4810-067-0001
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961014691524
NSN
5961-01-469-1524
MFG
HAMILTON SUNDSTRAND CORPORATION
Description
III END ITEM IDENTIFICATION: F18 E/F FIGHTER AIRCRAFT
INCLOSURE MATERIAL: METAL
MANUFACTURERS CODE: 73030
MFR SOURCE CONTROLLING REFERENCE: 5R4810-067-0001
MOUNTING METHOD: UNTHREADED HOLE
OVERALL LENGTH: 1.155 INCHES NOMINAL
SPEC/STD CONTROLLING DATA:
SPECIAL FEATURES: LEAD MATERIAL IS KOVAR OR ALLOY 52
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 10.0 MAXIMUM FORWARD VOLTAGE, PEAK AND 150.0 MAXIMUM REVERSE VOLTAGE, DC
Related Searches:
SDR067
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961014691524
NSN
5961-01-469-1524
MFG
SOLID STATE DEVICES INC.
Description
III END ITEM IDENTIFICATION: F18 E/F FIGHTER AIRCRAFT
INCLOSURE MATERIAL: METAL
MANUFACTURERS CODE: 73030
MFR SOURCE CONTROLLING REFERENCE: 5R4810-067-0001
MOUNTING METHOD: UNTHREADED HOLE
OVERALL LENGTH: 1.155 INCHES NOMINAL
SPEC/STD CONTROLLING DATA:
SPECIAL FEATURES: LEAD MATERIAL IS KOVAR OR ALLOY 52
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 10.0 MAXIMUM FORWARD VOLTAGE, PEAK AND 150.0 MAXIMUM REVERSE VOLTAGE, DC
Related Searches:
SMC50873
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961014691524
NSN
5961-01-469-1524
MFG
NATEL ENGINEERING COMPANY INC . DBA POWERCUBE DIV NATEL CHATSWORTH DIVISION
Description
III END ITEM IDENTIFICATION: F18 E/F FIGHTER AIRCRAFT
INCLOSURE MATERIAL: METAL
MANUFACTURERS CODE: 73030
MFR SOURCE CONTROLLING REFERENCE: 5R4810-067-0001
MOUNTING METHOD: UNTHREADED HOLE
OVERALL LENGTH: 1.155 INCHES NOMINAL
SPEC/STD CONTROLLING DATA:
SPECIAL FEATURES: LEAD MATERIAL IS KOVAR OR ALLOY 52
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 10.0 MAXIMUM FORWARD VOLTAGE, PEAK AND 150.0 MAXIMUM REVERSE VOLTAGE, DC
Related Searches:
SPD1027
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961014691524
NSN
5961-01-469-1524
MFG
SILICON TRANSISTOR CORP SUB OF BBF INC
Description
III END ITEM IDENTIFICATION: F18 E/F FIGHTER AIRCRAFT
INCLOSURE MATERIAL: METAL
MANUFACTURERS CODE: 73030
MFR SOURCE CONTROLLING REFERENCE: 5R4810-067-0001
MOUNTING METHOD: UNTHREADED HOLE
OVERALL LENGTH: 1.155 INCHES NOMINAL
SPEC/STD CONTROLLING DATA:
SPECIAL FEATURES: LEAD MATERIAL IS KOVAR OR ALLOY 52
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 10.0 MAXIMUM FORWARD VOLTAGE, PEAK AND 150.0 MAXIMUM REVERSE VOLTAGE, DC
