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5961-01-557-1195
20 Products
99202382
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961015571195
NSN
5961-01-557-1195
MFG
THALES
Description
INCLOSURE MATERIAL: PLASTIC
OVERALL HEIGHT: 0.055 INCHES MINIMUM AND 0.071 INCHES MAXIMUM
OVERALL LENGTH: 0.140 INCHES MINIMUM AND 0.152 INCHES MAXIMUM
OVERALL WIDTH: 0.037 INCHES MINIMUM AND 0.053 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: ZENER VOLTAGE - 4.09 TO 4.52 V AND 3.30 TO 4.00 V; ZENER IMPEDANCE - 90 OHMS AND 600 OHMS; 500 MW RATING; SURFACE MOUNT; CORROSION RESISTANT FINISH; SILICON
Related Searches:
TJSE20708
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961015557115
NSN
5961-01-555-7115
MFG
AMPHENOL PCD INC.
Description
III PRECIOUS MATERIAL: GOLD
III PRECIOUS MATERIAL AND LOCATION: CONTACT SURFACES GOLD
SPECIAL FEATURES: POLYTHERIMIDE INSULATOR BODY; SILCONE RUBBER SEALING GROMMET; GOLD PLATED COPPER ALLOY INTERNAL CONTACTS; BERYLLIUM COPPER RETAINER CLIPS; -65 TO 200 C TEMPERATURE; 5000 MOHMS AT 25 DEG C INSULATION REISISTANCE; 7.5 AMPS CONTACT CURRENT RATING
Related Searches:
IRFZ44NPBF
TRANSISTOR
NSN, MFG P/N
5961015557943
NSN
5961-01-555-7943
MFG
INTERNATIONAL RECTIFIER CORPORATION
Description
SPECIAL FEATURES: CIRCUIT: DISCRETE, POLARITY: N, VBRDSS (V): 55, RDS (ON) MAX 10V (MOHMS): 17.5, OG TYP: 42.0, OGD TYPE: 15.3,POWER DISSIPATION: 83
Related Searches:
TMDSCCSALL-1
CODE COMPOSER STUDI
NSN, MFG P/N
5961015557997
NSN
5961-01-555-7997
MFG
TEXAS INSTRUMENTS INCORPORATED DBA TEXAS INSTRUMENTS DIV SEMICONDUCTOR GROUP
Description
III END ITEM IDENTIFICATION: TURKISH GOVERNMENT
III PART NAME ASSIGNED BY CONTROLLING AGENCY: CODE COMPOSER STUDIO IDE
SPECIAL FEATURES: IS A KEY ELEMENT OF THE EXPRESSDSP SOFTWARE AND DEVELOPMENT TOOLS STRATEGY FROM TEXAS INSTRUMENTS; DELIVERS ALL OF THE HOST TOOLS AND RUNTIME SOFTWARE SUPPORT FOR YOUR TMS320 DSP AND OMAP BASED REAL-TIME EMBEDDED APPLICATIONS
Related Searches:
TMDSEMUUSB
EMULATOR
NSN, MFG P/N
5961015557998
NSN
5961-01-555-7998
MFG
TEXAS INSTRUMENTS INCORPORATED DBA TEXAS INSTRUMENTS DIV SEMICONDUCTOR GROUP
Description
III PART NAME ASSIGNED BY CONTROLLING AGENCY: SPECTRUM DIGITAL XDS510PP PLUS EMAGAVGTURKISH GOVERNMENT
SPECIAL FEATURES: SUPPORTS TEXAS INSTRUMENTS DSPS AAND MICROCONTROLLERS WITH JTAG INTERFACE; OPERATES OFF PC/LAPTOP USB PORT; ONE LED PROVIDES OPERATIONAL STATUS SOFTWARE FEATURES; UTILITY DESIGNED FOR EMULATOR TO TARGET VERIFICATION; COMPATIBLE WITH WINDOWS 98 SE, 2000,
~1: XP
Related Searches:
430065
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961015559014
NSN
5961-01-555-9014
MFG
BAY ELECTRONICS INC.
Description
SEMICONDUCTOR DEVICE,DIODE
Related Searches:
PD2469
RECTIFIER,SEMICONDUCTOR DEVICE,UNITIZED
NSN, MFG P/N
5961015559477
NSN
5961-01-555-9477
PD2469
RECTIFIER,SEMICONDUCTOR DEVICE,UNITIZED
NSN, MFG P/N
5961015559477
NSN
5961-01-555-9477
MFG
PD & E ELECTRONICS LLC
Description
ABSOLUTE MAXIMUM CURRENT RATING PER CHARACTERISTIC: 1.50 AMPERES AVERAGE FORWARD CURRENT AVERAGED OVER A FULL 60-HZ CYCLE
ABSOLUTE MAXIMUM VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 600.0 REVERSE VOLTAGE, PEAK
CIRCUIT CONNECTION STYLE DESIGNATOR: A7 BRIDGE 1 PHASE
MATERIAL: SILICON
MOUNTING METHOD: UNTHREADED HOLE
OPERATING TEMP RANGE: -55.0 TO 150.0 DEG CELSIUS
OVERALL HEIGHT: 1.250 INCHES NOMINAL
OVERALL WIDTH: 1.290 INCHES MAXIMUM
SPECIAL FEATURES: SINGLE PHASE
TERMINAL TYPE AND QUANTITY: 4 TERMINAL LUG
Related Searches:
645A684H01
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961015559930
NSN
5961-01-555-9930
645A684H01
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961015559930
NSN
5961-01-555-9930
MFG
POWEREX INC
Description
III END ITEM IDENTIFICATION: AIRPORT SURVEILLANCE RADAR 9 (ASR9)
Related Searches:
BZX84C15
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961015559951
NSN
5961-01-555-9951
MFG
PHILIPS SEMICONDUCTORS INC
Description
III END ITEM IDENTIFICATION: AIRPORT SURVEILLANCE RADAR 9 (ASR9)
Related Searches:
BC808W
TRANSISTOR
NSN, MFG P/N
5961015561495
NSN
5961-01-556-1495
MFG
PHILIPS SEMICONDUCTORS INC
Description
INCLOSURE MATERIAL: PLASTIC
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 150.0 DEG CELSIUS AMBIENT AIR
OVERALL HEIGHT: 0.8 MILLIMETERS MINIMUM AND 1.1 MILLIMETERS MAXIMUM
OVERALL LENGTH: 1.8 MILLIMETERS MINIMUM AND 2.2 MILLIMETERS MAXIMUM
OVERALL WIDTH: 1.1 MILLIMETERS MINIMUM AND 1.3 MILLIMETERS MAXIMUM
TERMINAL TYPE AND QUANTITY: 3 PIN
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: -30.0 MAXIMUM COLLECTOR TO BASE VOLTAGE/STATIC/EMITTER OPEN AND -25.0 MAXIMUM COLLECTOR-TO-EMITTER, SUBSTAINING VOLTAGE, BASE OPEN-CIRCUITED
Related Searches:
35-4120
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961015562008
NSN
5961-01-556-2008
MFG
DRS POWER & CONTROL TECHNOLOGIES INC.
Description
CURRENT RATING PER CHARACTERISTIC: 25.00 AMPERES MAXIMUM TOTAL POWER DISSIPATION
III END ITEM IDENTIFICATION: NUC EQUIPMENT
III PART NAME ASSIGNED BY CONTROLLING AGENCY: (INAVY)DIODE POWER MODULE
MOUNTING FACILITY QUANTITY: 2
MOUNTING METHOD: UNTHREADED HOLE
OVERALL HEIGHT: 1.195 INCHES NOMINAL
OVERALL LENGTH: 3.620 INCHES NOMINAL
OVERALL WIDTH: 0.787 INCHES NOMINAL
POWER RATING PER CHARACTERISTIC: 0.5 WATTS NOMINAL AVERAGE GATE POWER DISSIPATION
SPECIAL FEATURES: OPERATING TEMPERATURE:-40 TO 125 DEGREES CELSUIS
TERMINAL TYPE AND QUANTITY: 2 SCREW
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 120.0 NOMINAL REPETITIVE PEAK REVERSE VOLTAGE
Related Searches:
A10662A
TRANSISTOR
NSN, MFG P/N
5961015563053
NSN
5961-01-556-3053
MFG
API ELECTRONICS INC.
Description
III PART NAME ASSIGNED BY CONTROLLING AGENCY: RF POWER NPN SILICON TRANSISTOR
SEMICONDUCTOR MATERIAL: SILICON
Related Searches:
NTE6368
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961015563155
NSN
5961-01-556-3155
MFG
NTE ELECTRONICS INC SUB OF SOLID STATE INC
Description
CURRENT RATING PER CHARACTERISTIC: 50.00 MILLIAMPERES MAXIMUM REVERSE CURRENT, PEAK
III END ITEM IDENTIFICATION: MISC PARTS ELECTRICAL SYSTEMS LCAC 0025
III PART NAME ASSIGNED BY CONTROLLING AGENCY: SILICON POWER RECTIFIER STUD MOUNT, FAST RECOVERY, 250 AMP
MOUNTING METHOD: THREADED STUD
OVERALL LENGTH: 6.000 INCHES NOMINAL
OVERALL WIDTH ACROSS FLATS: 1.250 INCHES NOMINAL
SPECIAL FEATURES: THREADS ARE 0.750 INCH, 16 UNF-2A; RMS FWD CURRENT 400A; AVERAGE FWD CURRENT 250A; STORAGE TEMPERATURE RANGE -40 TO +150DEG C
TERMINAL LENGTH: 6.000 INCHES NOMINAL
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 1600.0 MAXIMUM REPETITIVE PEAK REVERSE VOLTAGE AND 1800.0 MAXIMUM NONREPETITIVE PEAK REVERSE VOLTAGE AND 2.0 MAXIMUM FORWARD VOLTAGE, DC
Related Searches:
600-42100-1
RECTIFIER,SEMICONDUCTOR DEVICE
NSN, MFG P/N
5961015566866
NSN
5961-01-556-6866
600-42100-1
RECTIFIER,SEMICONDUCTOR DEVICE
NSN, MFG P/N
5961015566866
NSN
5961-01-556-6866
MFG
POWER PARAGON INC DBA POWER SYSTEMS GROUP DIV POWER SYSTEMS GROUP
Description
III END ITEM IDENTIFICATION: MC-SABT, (SSGN); STATIC AUTOMATIC BUS TRANSFER, SABT
SPECIAL FEATURES: (INAVY): SILICON-CONTROLLED RECTIFIER ASSEMBLY
Related Searches:
93003074-01
SEMICONDUCTOR DEVICE ASSEMBLY
NSN, MFG P/N
5961015567990
NSN
5961-01-556-7990
93003074-01
SEMICONDUCTOR DEVICE ASSEMBLY
NSN, MFG P/N
5961015567990
NSN
5961-01-556-7990
MFG
NEW BEDFORD PANORAMEX CORP.
Description
III END ITEM IDENTIFICATION: APPROACH LIGHT SEQUENCE FLAHSER 2 (ALSF2)
SPECIAL FEATURES: TI6850.94, REF DES SCR1, TGI 6850.92, REF DES 5SCR1
Related Searches:
ED431625
SEMICONDUCTOR DEVICE ASSEMBLY
NSN, MFG P/N
5961015567990
NSN
5961-01-556-7990
ED431625
SEMICONDUCTOR DEVICE ASSEMBLY
NSN, MFG P/N
5961015567990
NSN
5961-01-556-7990
MFG
POWEREX INC
Description
III END ITEM IDENTIFICATION: APPROACH LIGHT SEQUENCE FLAHSER 2 (ALSF2)
SPECIAL FEATURES: TI6850.94, REF DES SCR1, TGI 6850.92, REF DES 5SCR1
Related Searches:
99202921
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961015571191
NSN
5961-01-557-1191
MFG
THALES
Description
INCLOSURE MATERIAL: PLASTIC
OVERALL HEIGHT: 0.037 INCHES MINIMUM AND 0.053 INCHES MAXIMUM
OVERALL LENGTH: 0.140 INCHES MINIMUM AND 0.152 INCHES MAXIMUM
OVERALL WIDTH: 0.055 INCHES MINIMUM AND 0.071 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: ZENER VOLTAGE - 11.4 TO 12.6 V AND 11.2 TO 12.7 V; ZENER IMPEDANCE - 90 OHMS AND 600 OHMS; 500 MW RATING; SURFACE MOUNT; CORROSION RESISTANT FINISH; SILICON
Related Searches:
MMSZ12T1
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961015571191
NSN
5961-01-557-1191
MFG
FREESCALE SEMICONDUCTOR INC.
Description
INCLOSURE MATERIAL: PLASTIC
OVERALL HEIGHT: 0.037 INCHES MINIMUM AND 0.053 INCHES MAXIMUM
OVERALL LENGTH: 0.140 INCHES MINIMUM AND 0.152 INCHES MAXIMUM
OVERALL WIDTH: 0.055 INCHES MINIMUM AND 0.071 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: ZENER VOLTAGE - 11.4 TO 12.6 V AND 11.2 TO 12.7 V; ZENER IMPEDANCE - 90 OHMS AND 600 OHMS; 500 MW RATING; SURFACE MOUNT; CORROSION RESISTANT FINISH; SILICON
Related Searches:
99202383
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961015571193
NSN
5961-01-557-1193
MFG
THALES
Description
INCLOSURE MATERIAL: PLASTIC
OVERALL HEIGHT: 0.055 INCHES MINIMUM AND 0.071 INCHES MAXIMUM
OVERALL LENGTH: 0.140 INCHES MINIMUM AND 0.152 INCHES MAXIMUM
OVERALL WIDTH: 0.037 INCHES MINIMUM AND 0.053 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: ZENER VOLTAGE - 15.2 TO 16.8 V AND 15.2 TO 17.0 V; ZENER IMPEDANCE - 40 OHMS AND 200 OHMS; 500 MW RATING; SURFACE MOUNT; CORROSION RESISTANT FINISH; SILICON
Related Searches:
MMSZ16T1
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961015571193
NSN
5961-01-557-1193
MFG
FREESCALE SEMICONDUCTOR INC.
Description
INCLOSURE MATERIAL: PLASTIC
OVERALL HEIGHT: 0.055 INCHES MINIMUM AND 0.071 INCHES MAXIMUM
OVERALL LENGTH: 0.140 INCHES MINIMUM AND 0.152 INCHES MAXIMUM
OVERALL WIDTH: 0.037 INCHES MINIMUM AND 0.053 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: ZENER VOLTAGE - 15.2 TO 16.8 V AND 15.2 TO 17.0 V; ZENER IMPEDANCE - 40 OHMS AND 200 OHMS; 500 MW RATING; SURFACE MOUNT; CORROSION RESISTANT FINISH; SILICON
