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5961-01-511-0985
20 Products
M81714/24-1D001
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961015110985
NSN
5961-01-511-0985
M81714/24-1D001
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961015110985
NSN
5961-01-511-0985
MFG
MILITARY SPECIFICATIONS PROMULGATED BY MILITARY DEPARTMENTS/AGENCIES UNDER AUTHORITY OF DEFENSE STANDARDIZATION MANUAL 4120 3-M
Description
DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: M81714/24-1D001
MANUFACTURERS CODE: 81349
NON-DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: MIL-T-81714/24B
OVERALL LENGTH: 2.000 INCHES MAXIMUM
SPEC/STD CONTROLLING DATA:
SPECIAL FEATURES: DIODE WIRE SPLICE
Related Searches:
15KPA18A
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961015096805
NSN
5961-01-509-6805
MFG
PROTEK DEVICES LP DBA PROTEK DEVICES
Description
CURRENT RATING PER CHARACTERISTIC: 200.000 AMPERES MAXIMUM FORWARD CURRENT, DC
III END ITEM IDENTIFICATION: 2320-01-494-7606
INCLOSURE MATERIAL: PLASTIC
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 150.000 DEG CELSIUS JUNCTION
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 8.600 MILLIMETERS MINIMUM AND 9.100 MILLIMETERS MAXIMUM
OVERALL LENGTH: 8.600 MILLIMETERS MINIMUM AND 9.100 MILLIMETERS MAXIMUM
POWER RATING PER CHARACTERISTIC: 1.000 WATTS MAXIMUM TOTAL DEVICE DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL LENGTH: 24.500 MILLIMETERS MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 20.000 MINIMUM BREAKDOWN VOLTAGE, DC
Related Searches:
360508
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961015101758
NSN
5961-01-510-1758
MFG
HOBART CORPORATION DBA HOBART
Description
III END ITEM IDENTIFICATION: USED ON HOBART HM1000 ML-103666 MICROWAVE OVEN ELECTRICAL SYSTEM
Related Searches:
360517
TRANSISTOR
NSN, MFG P/N
5961015101774
NSN
5961-01-510-1774
MFG
HOBART CORPORATION DBA HOBART
Description
III END ITEM IDENTIFICATION: USED ON HOBART HM1000 ML-103666 MICROWAVE OVEN AIR DUCT
Related Searches:
APT10045JLL
TRANSISTOR
NSN, MFG P/N
5961015103457
NSN
5961-01-510-3457
MFG
MICROSEMI CORP. - POWER PRODUCTS GROUP DBA ADVANCED POWER TECHNOLOGY INC DIV MICROSEMI CORPORATION
Description
SPECIAL FEATURES: LOWER INPUT CAPACITANCE; INCREASED POWER DISSIPATION; LOWER MILLER CAPACITANCE; EASIER TO DRIVE; LOWER GATE CHARGE; POPULAR SOT-227 PACKAGE
Related Searches:
P123
TRANSISTOR
NSN, MFG P/N
5961015103522
NSN
5961-01-510-3522
MFG
R F POLYFET DEVICES INC
Description
INCLOSURE MATERIAL: CERAMIC
INTERNAL CONFIGURATION: FIELD EFFECT
MOUNTING METHOD: BRACKET
OVERALL LENGTH: 0.744 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 2 TAB, SOLDER LUG
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 12.5 MAXIMUM DRAIN SUPPLY VOLTAGE
Related Searches:
97-3435GR1
SEMICONDUCTOR DEVICE ASSEMBLY
NSN, MFG P/N
5961015104104
NSN
5961-01-510-4104
97-3435GR1
SEMICONDUCTOR DEVICE ASSEMBLY
NSN, MFG P/N
5961015104104
NSN
5961-01-510-4104
MFG
DRS POWER & CONTROL TECHNOLOGIES INC.
Description
CRITICALITY CODE JUSTIFICATION: ZZZY
DESIGN CONTROL REFERENCE: 97-3435GR1
MANUFACTURERS CODE: 27192
REFERENCE NUMBER DIFFERENTIATING CHARACTERISTICS: MATERIAL WILL BE IN ACCORDANCE WITH NAVICP ACTIVITY HX QUALITY CONTROL, MANUFACTURING AND TESTING SPECIFICATIONS
THE MANUFACTURERS DATA:
Related Searches:
97-3435GR2
SEMICONDUCTOR DEVICE ASSEMBLY
NSN, MFG P/N
5961015104107
NSN
5961-01-510-4107
97-3435GR2
SEMICONDUCTOR DEVICE ASSEMBLY
NSN, MFG P/N
5961015104107
NSN
5961-01-510-4107
MFG
DRS POWER & CONTROL TECHNOLOGIES INC.
Description
CRITICALITY CODE JUSTIFICATION: ZZZY
DESIGN CONTROL REFERENCE: 97-3435GR2
MANUFACTURERS CODE: 27192
REFERENCE NUMBER DIFFERENTIATING CHARACTERISTICS: MATERIAL WILL BE IN ACCORDANCE WITH NAVICP ACTIVITY HX QUALITY CONTROL, MANUFACTURING AND TESTING SPECIFICATIONS
THE MANUFACTURERS DATA:
Related Searches:
143495
SEMICONDUCTOR DEVICE ASSEMBLY
NSN, MFG P/N
5961015104128
NSN
5961-01-510-4128
MFG
LOCKHEED MARTIN CORPORATION DBA LOCKHEED MARTIN DIV MISSILES AND FIRE CONTROL - ARCHBALD
Description
CRITICALITY CODE JUSTIFICATION: ZZZY
DESIGN CONTROL REFERENCE: 143495
MANUFACTURERS CODE: 94271
REFERENCE NUMBER DIFFERENTIATING CHARACTERISTICS: MATERIAL WILL BE IN ACCORDANCE WITH NAVICP ACTIVITY HX QUALITY CONTROL, MANUFACTURING AND TESTING SPECIFICATIONS
THE MANUFACTURERS DATA:
Related Searches:
143496
SEMICONDUCTOR DEVICE ASSEMBLY
NSN, MFG P/N
5961015104129
NSN
5961-01-510-4129
MFG
LOCKHEED MARTIN CORPORATION DBA LOCKHEED MARTIN DIV MISSILES AND FIRE CONTROL - ARCHBALD
Description
CRITICALITY CODE JUSTIFICATION: ZZZY
DESIGN CONTROL REFERENCE: 143496
MANUFACTURERS CODE: 94271
REFERENCE NUMBER DIFFERENTIATING CHARACTERISTICS: MATERIAL WILL BE IN ACCORDANCE WITH NAVICP ACTIVITY HX QUALITY CONTROL, MANUFACTURING AND TESTING SPECIFICATIONS
THE MANUFACTURERS DATA:
Related Searches:
APT2X31D100J
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961015106280
NSN
5961-01-510-6280
APT2X31D100J
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961015106280
NSN
5961-01-510-6280
MFG
MICROSEMI CORP. - POWER PRODUCTS GROUP DBA ADVANCED POWER TECHNOLOGY INC DIV MICROSEMI CORPORATION
Description
SPECIAL FEATURES: ULTRAFAST RECOVERY TIMES;SOFT RECOVERY CHARACTERISTICS;POPULAR SOT-227 PACKAGE;LOW FORWARD VOLTAGE;HIGH BLOCKING VOLTAGE;LOW LEAKAGE CURRENT
Related Searches:
676-4GHR201
RECTIFIER,SEMICONDUCTOR DEVICE,UNITIZED
NSN, MFG P/N
5961015107967
NSN
5961-01-510-7967
676-4GHR201
RECTIFIER,SEMICONDUCTOR DEVICE,UNITIZED
NSN, MFG P/N
5961015107967
NSN
5961-01-510-7967
MFG
MICRO USPD INC
Description
ABSOLUTE MAXIMUM CURRENT RATING PER CHARACTERISTIC: 1.50 AMPERES AVERAGE FORWARD CURRENT AVERAGED OVER A FULL 60-HZ CYCLE
ABSOLUTE MAXIMUM VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 400.0 PEAK INVERSE VOLTAGE
CIRCUIT CONNECTION STYLE DESIGNATOR: A7 BRIDGE 1 PHASE
MOUNTING METHOD: TERMINAL
OPERATING TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
SPECIAL FEATURES: HIGH RELIABILITY; BODY WIDTH/LENGTH, 0.320 INCHES; BODY HEIGHT, 0.150 INCHES
TERMINAL TYPE AND QUANTITY: 4 UNINSULATED WIRE LEAD
Related Searches:
2N4393-2
TRANSISTOR
NSN, MFG P/N
5961015108470
NSN
5961-01-510-8470
MFG
SILICONIX INCORPORATED D IV SILICONIX
Description
CURRENT RATING PER CHARACTERISTIC: 5.00 MILLIAMPERES MINIMUM ZERO-GATE-VOLTAGE DRAIN CURRENT AND 30.00 MILLIAMPERES MAXIMUM ZERO-GATE-VOLTAGE DRAIN CURRENT
III PART NAME ASSIGNED BY CONTROLLING AGENCY: N-CHANNEL JFET
INCLOSURE MATERIAL: METAL
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.209 INCHES MINIMUM AND 0.230 INCHES MAXIMUM
OVERALL LENGTH: 0.170 INCHES MINIMUM AND 0.210 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 1800.0 MILLIWATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 3 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: -40.0 MINIMUM BREAKDOWN VOLTAGE, GATE-TO-SOURCE, WITH ALL OTHER TERMINALS SHORT-CIRCUITED TO SOURCE
Related Searches:
JANTX1N4623UR-1
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961015108492
NSN
5961-01-510-8492
JANTX1N4623UR-1
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961015108492
NSN
5961-01-510-8492
MFG
MILITARY SPECIFICATIONS PROMULGATED BY MILITARY DEPARTMENTS/AGENCIES UNDER AUTHORITY OF DEFENSE STANDARDIZATION MANUAL 4120 3-M
Description
CURRENT RATING PER CHARACTERISTIC: 2.00 MICROAMPERES MAXIMUM REVERSE CURRENT, DC
DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: JANTX1N4623UR-1
INCLOSURE MATERIAL: METAL
MANUFACTURERS CODE: 81349
MOUNTING METHOD: TERMINAL
NON-DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: MIL-PRF-19500/435
OVERALL DIAMETER: 0.063 INCHES MINIMUM AND 0.067 INCHES MAXIMUM
OVERALL LENGTH: 0.130 INCHES MINIMUM AND 0.146 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
SPEC/STD CONTROLLING DATA:
TERMINAL TYPE AND QUANTITY: 2 BONDING PAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 4.3 NOMINAL NOMINAL REGULATOR VOLTAGE
Related Searches:
6L7652
HOLDER,SEMICONDUCTOR DEVICE
NSN, MFG P/N
5961015109934
NSN
5961-01-510-9934
MFG
CATERPILLAR INC. DBA CATERPILLAR DIV GOVERNMENTAL AND DEFENSE PRODUCTS
Description
III PART NAME ASSIGNED BY CONTROLLING AGENCY: SINK KIT
Related Searches:
6L7651
HOLDER,SEMICONDUCTOR DEVICE
NSN, MFG P/N
5961015109967
NSN
5961-01-510-9967
MFG
CATERPILLAR INC. DBA CATERPILLAR DIV GOVERNMENTAL AND DEFENSE PRODUCTS
Description
III PART NAME ASSIGNED BY CONTROLLING AGENCY: SINK KIT
Related Searches:
40HFL40S05
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961015110019
NSN
5961-01-511-0019
40HFL40S05
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961015110019
NSN
5961-01-511-0019
MFG
INTERNATIONAL RECTIFIER CORP ORATION USE CAGE CODE 81483 FOR CATALOGING.
Description
CURRENT RATING PER CHARACTERISTIC: 40.00 AMPERES MAXIMUM AVERAGE FORWARD CURRENT AVERAGED OVER A FULL 60-HZ CYCLE
FUNCTION FOR WHICH DESIGNED: RECTIFIER
INCLOSURE MATERIAL: METAL
MOUNTING FACILITY QUANTITY: 1
MOUNTING METHOD: THREADED STUD
NOMINAL THREAD SIZE: 0.250 INCHES
OVERALL LENGTH: 1.453 INCHES MAXIMUM
OVERALL WIDTH ACROSS FLATS: 0.677 INCHES MINIMUM AND 0.690 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: FAST RECOVERY; JUNCTION TEMPERATURE RANGE MINUS 46.0 TO PLUS 125.0 DEGREES C
TERMINAL TYPE AND QUANTITY: 1 TAB, SOLDER LUG AND 1 THREADED STUD
THREAD QUANTITY PER INCH: 28
THREAD SERIES DESIGNATOR: UNF
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 400.0 MAXIMUM REPETITIVE PEAK REVERSE VOLTAGE
Related Searches:
MIS-19836/91
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961015110019
NSN
5961-01-511-0019
MIS-19836/91
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961015110019
NSN
5961-01-511-0019
MFG
U S ARMY AVIATION AND MISSILE COMMAND
Description
CURRENT RATING PER CHARACTERISTIC: 40.00 AMPERES MAXIMUM AVERAGE FORWARD CURRENT AVERAGED OVER A FULL 60-HZ CYCLE
FUNCTION FOR WHICH DESIGNED: RECTIFIER
INCLOSURE MATERIAL: METAL
MOUNTING FACILITY QUANTITY: 1
MOUNTING METHOD: THREADED STUD
NOMINAL THREAD SIZE: 0.250 INCHES
OVERALL LENGTH: 1.453 INCHES MAXIMUM
OVERALL WIDTH ACROSS FLATS: 0.677 INCHES MINIMUM AND 0.690 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: FAST RECOVERY; JUNCTION TEMPERATURE RANGE MINUS 46.0 TO PLUS 125.0 DEGREES C
TERMINAL TYPE AND QUANTITY: 1 TAB, SOLDER LUG AND 1 THREADED STUD
THREAD QUANTITY PER INCH: 28
THREAD SERIES DESIGNATOR: UNF
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 400.0 MAXIMUM REPETITIVE PEAK REVERSE VOLTAGE
Related Searches:
591897-1
SEMICONDUCTOR DEVICE ASSEMBLY
NSN, MFG P/N
5961015110060
NSN
5961-01-511-0060
591897-1
SEMICONDUCTOR DEVICE ASSEMBLY
NSN, MFG P/N
5961015110060
NSN
5961-01-511-0060
MFG
TYCO ELECTRONICS CORPORATION
Description
III END ITEM IDENTIFICATION: JOINT STARS AIRFRAME
III PART NAME ASSIGNED BY CONTROLLING AGENCY: MODULE FEED-BACK ASSEMBLY,SIZE 20TJ WITH TWO JANTX1N5618 DIODES
MAJOR COMPONENTS: DIODE 2,PIN CONTACT 4,SEALING PLUG 2,RETAINING CLIP 1,MODULE HOUSING 1,CONTACT SOCKET 1
OVERALL HEIGHT: 0.842 INCHES MINIMUM AND 0.847 INCHES MAXIMUM
OVERALL LENGTH: 0.845 INCHES MINIMUM AND 0.855 INCHES MAXIMUM
OVERALL WIDTH: 0.385 INCHES MINIMUM AND 0.395 INCHES MAXIMUM
Related Searches:
GM812D5
SEMICONDUCTOR DEVICE ASSEMBLY
NSN, MFG P/N
5961015110060
NSN
5961-01-511-0060
GM812D5
SEMICONDUCTOR DEVICE ASSEMBLY
NSN, MFG P/N
5961015110060
NSN
5961-01-511-0060
MFG
NORTHROP GRUMMAN SYSTEMS CORPORATION DIV NORTHROP GRUMMAN AEROSPACE SYSTEMS
Description
III END ITEM IDENTIFICATION: JOINT STARS AIRFRAME
III PART NAME ASSIGNED BY CONTROLLING AGENCY: MODULE FEED-BACK ASSEMBLY,SIZE 20TJ WITH TWO JANTX1N5618 DIODES
MAJOR COMPONENTS: DIODE 2,PIN CONTACT 4,SEALING PLUG 2,RETAINING CLIP 1,MODULE HOUSING 1,CONTACT SOCKET 1
OVERALL HEIGHT: 0.842 INCHES MINIMUM AND 0.847 INCHES MAXIMUM
OVERALL LENGTH: 0.845 INCHES MINIMUM AND 0.855 INCHES MAXIMUM
OVERALL WIDTH: 0.385 INCHES MINIMUM AND 0.395 INCHES MAXIMUM
