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5961-01-418-3884
20 Products
7575607-001
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961014183884
NSN
5961-01-418-3884
7575607-001
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961014183884
NSN
5961-01-418-3884
MFG
GENERAL DYNAMICS LAND SYSTEMS INC . DBA WOODBRIDGE TECHNICAL CENTER DIV GENERAL DYNAMICS LAND SYSTEMS INC-WOODBRIDGE TECHNICAL CENTE
Description
CURRENT RATING PER CHARACTERISTIC: 25.00 AMPERES MAXIMUM PEAK FORWARD SURGE CURRENT
III PRECIOUS MATERIAL: SILVER
III PRECIOUS MATERIAL AND LOCATION: TERMINALS SILVER
INCLOSURE MATERIAL: CERAMIC
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 175.0 DEG CELSIUS JUNCTION
MOUNTING METHOD: PRESS FIT
OVERALL HEIGHT: 0.091 INCHES MINIMUM AND 0.128 INCHES MAXIMUM
OVERALL LENGTH: 0.168 INCHES MINIMUM AND 0.230 INCHES MAXIMUM
OVERALL WIDTH: 0.091 INCHES MINIMUM AND 0.128 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 2 CASE
TEST DATA DOCUMENT: 13160-7575607 DRAWING
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 200.0 MAXIMUM WORKING PEAK REVERSE VOLTAGE
Related Searches:
011-0009
SEMICONDUCTOR DEVICE SET
NSN, MFG P/N
5961014182453
NSN
5961-01-418-2453
MFG
ANDEEN-HAGERLING INC.
Description
SEMICONDUCTOR DEVICE SET
Related Searches:
P1086
SEMICONDUCTOR DEVICE SET
NSN, MFG P/N
5961014182453
NSN
5961-01-418-2453
MFG
NATIONAL SEMICONDUCTOR CORPORATION
Description
SEMICONDUCTOR DEVICE SET
Related Searches:
8879000110-2
SEMICONDUCTOR DEVICES,UNITIZED
NSN, MFG P/N
5961014182454
NSN
5961-01-418-2454
8879000110-2
SEMICONDUCTOR DEVICES,UNITIZED
NSN, MFG P/N
5961014182454
NSN
5961-01-418-2454
MFG
NAVCOM DEFENSE ELECTRONICS INC.
Description
COMPONENT NAME AND QUANTITY: 2 SEMICONDUCTOR DEVICE DIODE
CURRENT RATING PER CHARACTERISTIC: 350.00 AMPERES MAXIMUM FORWARD CURRENT, NONREPETITIVE, MAXIMUM PEAK TOTAL VALUE AND 120.00 AMPERES MAXIMUM FORWARD CURRENT, REPETITIVE, MAXIMUM PEAK TOTAL VALUE ALL SEMICONDUCTOR DEVICE DIODE
ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE: CATHODE
INCLOSURE MATERIAL: METAL
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: TO-3
MOUNTING FACILITY QUANTITY: 2
MOUNTING METHOD: UNTHREADED HOLE
OVERALL HEIGHT: 0.450 INCHES MAXIMUM
OVERALL LENGTH: 1.573 INCHES MAXIMUM
OVERALL WIDTH: 1.050 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON ALL SEMICONDUCTOR DEVICE DIODE
TERMINAL TYPE AND QUANTITY: 2 PIN AND 1 CASE
TEST DATA DOCUMENT: 57057-8879000110 DRAWING
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 150.0 MAXIMUM REPETITIVE PEAK REVERSE VOLTAGE, MAXIMUM PEAK TOTAL VALUE AND 105.0 MAXIMUM REVERSE VOLTAGE, TOTAL RMS ALL SEMICONDUCTOR DEVICE DIODE
Related Searches:
SHA394BTX
SEMICONDUCTOR DEVICES,UNITIZED
NSN, MFG P/N
5961014182454
NSN
5961-01-418-2454
SHA394BTX
SEMICONDUCTOR DEVICES,UNITIZED
NSN, MFG P/N
5961014182454
NSN
5961-01-418-2454
MFG
SOLID STATE DEVICES INC.
Description
COMPONENT NAME AND QUANTITY: 2 SEMICONDUCTOR DEVICE DIODE
CURRENT RATING PER CHARACTERISTIC: 350.00 AMPERES MAXIMUM FORWARD CURRENT, NONREPETITIVE, MAXIMUM PEAK TOTAL VALUE AND 120.00 AMPERES MAXIMUM FORWARD CURRENT, REPETITIVE, MAXIMUM PEAK TOTAL VALUE ALL SEMICONDUCTOR DEVICE DIODE
ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE: CATHODE
INCLOSURE MATERIAL: METAL
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: TO-3
MOUNTING FACILITY QUANTITY: 2
MOUNTING METHOD: UNTHREADED HOLE
OVERALL HEIGHT: 0.450 INCHES MAXIMUM
OVERALL LENGTH: 1.573 INCHES MAXIMUM
OVERALL WIDTH: 1.050 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON ALL SEMICONDUCTOR DEVICE DIODE
TERMINAL TYPE AND QUANTITY: 2 PIN AND 1 CASE
TEST DATA DOCUMENT: 57057-8879000110 DRAWING
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 150.0 MAXIMUM REPETITIVE PEAK REVERSE VOLTAGE, MAXIMUM PEAK TOTAL VALUE AND 105.0 MAXIMUM REVERSE VOLTAGE, TOTAL RMS ALL SEMICONDUCTOR DEVICE DIODE
Related Searches:
850-38990-45
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961014182455
NSN
5961-01-418-2455
850-38990-45
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961014182455
NSN
5961-01-418-2455
MFG
KATO ENGINEERING INC.
Description
CURRENT RATING PER CHARACTERISTIC: 120.00 AMPERES MAXIMUM FORWARD CURRENT, TOTAL RMS
ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE: CATHODE
INCLOSURE MATERIAL: METAL
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: DO-203AB
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 150.0 DEG CELSIUS JUNCTION
MOUNTING FACILITY QUANTITY: 1
MOUNTING METHOD: THREADED STUD
OVERALL LENGTH: 35.5 MILLIMETERS NOMINAL
SEMICONDUCTOR MATERIAL: SELENIUM
TERMINAL TYPE AND QUANTITY: 1 THREADED STUD AND 1 TAB, SOLDER LUG
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 1200.0 MAXIMUM REPETITIVE PEAK REVERSE VOLTAGE
Related Searches:
SKR60F12
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961014182455
NSN
5961-01-418-2455
MFG
SEMIKRON INTL INC
Description
CURRENT RATING PER CHARACTERISTIC: 120.00 AMPERES MAXIMUM FORWARD CURRENT, TOTAL RMS
ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE: CATHODE
INCLOSURE MATERIAL: METAL
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: DO-203AB
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 150.0 DEG CELSIUS JUNCTION
MOUNTING FACILITY QUANTITY: 1
MOUNTING METHOD: THREADED STUD
OVERALL LENGTH: 35.5 MILLIMETERS NOMINAL
SEMICONDUCTOR MATERIAL: SELENIUM
TERMINAL TYPE AND QUANTITY: 1 THREADED STUD AND 1 TAB, SOLDER LUG
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 1200.0 MAXIMUM REPETITIVE PEAK REVERSE VOLTAGE
Related Searches:
9999-4408-002
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961014182459
NSN
5961-01-418-2459
9999-4408-002
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961014182459
NSN
5961-01-418-2459
MFG
FLIGHTLINE ELECTRONICS INC. DBA ULTRA ELEC FLIGHTLINE SYSTEMS DIV ULTRA ELECTRONICS FLIGHTLINE SYSTEMS
Description
CAPACITANCE RATING IN PICOFARADS: 1.8 MAXIMUM
CURRENT RATING PER CHARACTERISTIC: 10.00 MICROAMPERES MAXIMUM REVERSE CURRENT, INSTANTANEOUS
INCLOSURE MATERIAL: CERAMIC
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 175.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
OVERALL HEIGHT: 0.094 INCHES MINIMUM AND 0.102 INCHES MAXIMUM
OVERALL LENGTH: 0.440 INCHES MINIMUM AND 0.480 INCHES MAXIMUM
OVERALL WIDTH: 0.043 INCHES MINIMUM AND 0.066 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 300.0 MILLIWATTS MAXIMUM TOTAL DEVICE DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 2 RIBBON
TEST DATA DOCUMENT: 50027-9999-4408 DRAWING
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 100.0 MAXIMUM REVERSE VOLTAGE, INSTANTANEOUS
Related Searches:
S22-8002
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961014182459
NSN
5961-01-418-2459
MFG
MICROSEMI CORP-MASSACHUSETTS DBA MICROSEMI-LOWELL DIV MICROSEMI - LOWELL
Description
CAPACITANCE RATING IN PICOFARADS: 1.8 MAXIMUM
CURRENT RATING PER CHARACTERISTIC: 10.00 MICROAMPERES MAXIMUM REVERSE CURRENT, INSTANTANEOUS
INCLOSURE MATERIAL: CERAMIC
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 175.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
OVERALL HEIGHT: 0.094 INCHES MINIMUM AND 0.102 INCHES MAXIMUM
OVERALL LENGTH: 0.440 INCHES MINIMUM AND 0.480 INCHES MAXIMUM
OVERALL WIDTH: 0.043 INCHES MINIMUM AND 0.066 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 300.0 MILLIWATTS MAXIMUM TOTAL DEVICE DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 2 RIBBON
TEST DATA DOCUMENT: 50027-9999-4408 DRAWING
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 100.0 MAXIMUM REVERSE VOLTAGE, INSTANTANEOUS
Related Searches:
JANTX1N6326US
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961014182738
NSN
5961-01-418-2738
JANTX1N6326US
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961014182738
NSN
5961-01-418-2738
MFG
MILITARY SPECIFICATIONS PROMULGATED BY MILITARY DEPARTMENTS/AGENCIES UNDER AUTHORITY OF DEFENSE STANDARDIZATION MANUAL 4120 3-M
Description
DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: JANTX1N6326US
FUNCTION FOR WHICH DESIGNED: VOLTAGE REGULATOR
INCLOSURE MATERIAL: GLASS
MANUFACTURERS CODE: 81349
MOUNTING METHOD: COMPRESSION
NON-DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: MIL-PRF-19500/533
OVERALL LENGTH: 0.195 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
SPEC/STD CONTROLLING DATA:
SPECIFICATION/STANDARD DATA: 81349-MIL-S-19500/533 GOVERNMENT SPECIFICATION
TERMINAL TYPE AND QUANTITY: 2 CASE
TEST DATA DOCUMENT: 81349-MIL-S-19500 SPECIFICATION
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 12.0 NOMINAL NOMINAL REGULATOR VOLTAGE
Related Searches:
0N613770-1
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961014182938
NSN
5961-01-418-2938
0N613770-1
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961014182938
NSN
5961-01-418-2938
MFG
NATIONAL SECURITY AGENCY
Description
DESIGN CONTROL REFERENCE: 0N613770-1
III END ITEM IDENTIFICATION: RQL
MANUFACTURERS CODE: 98230
THE MANUFACTURERS DATA:
Related Searches:
JANTX1N6334
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961014183448
NSN
5961-01-418-3448
JANTX1N6334
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961014183448
NSN
5961-01-418-3448
MFG
MILITARY SPECIFICATIONS PROMULGATED BY MILITARY DEPARTMENTS/AGENCIES UNDER AUTHORITY OF DEFENSE STANDARDIZATION MANUAL 4120 3-M
Description
DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: JANTX1N6334
FUNCTION FOR WHICH DESIGNED: VOLTAGE REGULATOR
III END ITEM IDENTIFICATION: C-17A ACFT
INCLOSURE MATERIAL: GLASS
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: DO-35
MANUFACTURERS CODE: 81349
MOUNTING METHOD: TERMINAL
NON-DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: MIL-PRF-19500/533
OVERALL LENGTH: 1.120 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
SPEC/STD CONTROLLING DATA:
SPECIFICATION/STANDARD DATA: 81349-MIL-S-19500/533 GOVERNMENT SPECIFICATION
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
TEST DATA DOCUMENT: 81349-MIL-S-19500 SPECIFICATION
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 35.0 NOMINAL NOMINAL REGULATOR VOLTAGE
Related Searches:
301867
TRANSISTOR
NSN, MFG P/N
5961014183607
NSN
5961-01-418-3607
MFG
CONTROL GENERAL CORP
Description
TRANSISTOR
Related Searches:
CL-214423
RECTIFIER,SEMICONDUCTOR DEVICE
NSN, MFG P/N
5961014183609
NSN
5961-01-418-3609
CL-214423
RECTIFIER,SEMICONDUCTOR DEVICE
NSN, MFG P/N
5961014183609
NSN
5961-01-418-3609
MFG
GOULD INSTRUMENT SYSTEMS INC
Description
RECTIFIER,SEMICONDUCTOR DEVICE
Related Searches:
CL-212914
TRANSISTOR
NSN, MFG P/N
5961014183610
NSN
5961-01-418-3610
MFG
GOULD INSTRUMENT SYSTEMS INC
Description
TRANSISTOR
Related Searches:
MPQ3457
TRANSISTOR
NSN, MFG P/N
5961014183610
NSN
5961-01-418-3610
MFG
SANDVIK INC METALWORKING PRODUCTS DIV
Description
TRANSISTOR
Related Searches:
RF-80
RECTIFIER,SEMICONDUCTOR DEVICE
NSN, MFG P/N
5961014183611
NSN
5961-01-418-3611
MFG
KEITHLEY INSTRUMENTS INC.
Description
RECTIFIER,SEMICONDUCTOR DEVICE
Related Searches:
0837-0382
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961014183612
NSN
5961-01-418-3612
MFG
AVAGO TECHNOLOGIES U.S. INC. DIV AVAGO TECHNOLOGIES
Description
SEMICONDUCTOR DEVICE,DIODE
Related Searches:
1902-1544
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961014183613
NSN
5961-01-418-3613
MFG
AVAGO TECHNOLOGIES U.S. INC. DIV AVAGO TECHNOLOGIES
Description
SEMICONDUCTOR DEVICE,DIODE
Related Searches:
JANTX1N5615US
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961014183884
NSN
5961-01-418-3884
JANTX1N5615US
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961014183884
NSN
5961-01-418-3884
MFG
MILITARY SPECIFICATIONS PROMULGATED BY MILITARY DEPARTMENTS/AGENCIES UNDER AUTHORITY OF DEFENSE STANDARDIZATION MANUAL 4120 3-M
Description
CURRENT RATING PER CHARACTERISTIC: 25.00 AMPERES MAXIMUM PEAK FORWARD SURGE CURRENT
III PRECIOUS MATERIAL: SILVER
III PRECIOUS MATERIAL AND LOCATION: TERMINALS SILVER
INCLOSURE MATERIAL: CERAMIC
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 175.0 DEG CELSIUS JUNCTION
MOUNTING METHOD: PRESS FIT
OVERALL HEIGHT: 0.091 INCHES MINIMUM AND 0.128 INCHES MAXIMUM
OVERALL LENGTH: 0.168 INCHES MINIMUM AND 0.230 INCHES MAXIMUM
OVERALL WIDTH: 0.091 INCHES MINIMUM AND 0.128 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 2 CASE
TEST DATA DOCUMENT: 13160-7575607 DRAWING
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 200.0 MAXIMUM WORKING PEAK REVERSE VOLTAGE
