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5961-01-576-5835
20 Products
91830692
TRANSISTOR
NSN, MFG P/N
5961015765835
NSN
5961-01-576-5835
MFG
THALES
Description
III END ITEM IDENTIFICATION: N-CHANNEL MOSFET
III PART NAME ASSIGNED BY CONTROLLING AGENCY: TRANSISTOR
SPECIAL FEATURES: CONTINUOUS DRAIN CURRENT :4.2 A; DRAIN-SOURCE BREAKDOWN VOLTAGE: 30V; GATE-SOURCE BREAKDOWN VOLTAGE: 20 V
Related Searches:
91812546
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961015761631
NSN
5961-01-576-1631
MFG
THALES
Description
CURRENT RATING PER CHARACTERISTIC: 3.00 AMPERES MAXIMUM FORWARD CURRENT, AVERAGE
Related Searches:
S3-100-30A PUCE
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961015761631
NSN
5961-01-576-1631
S3-100-30A PUCE
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961015761631
NSN
5961-01-576-1631
MFG
SUSSEX SEMICONDUCTOR INC
Description
CURRENT RATING PER CHARACTERISTIC: 3.00 AMPERES MAXIMUM FORWARD CURRENT, AVERAGE
Related Searches:
A06-67712
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961015761681
NSN
5961-01-576-1681
MFG
DAIMLER TRUCKS NORTH AMERICA LLC
Description
SEMICONDUCTOR DEVICE,DIODE
Related Searches:
1N6054A
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961015761705
NSN
5961-01-576-1705
MFG
JOINT ELECTRON DEVICE ENGINEERING COUNCIL
Description
III END ITEM IDENTIFICATION: AIRCRAFT APPLICATIONS
III PART NAME ASSIGNED BY CONTROLLING AGENCY: TRANSIENT SUPPRESSOR AND PROTECTIVE DIODE
SPECIAL FEATURES: FORWARD CURRENT (CONTINUOUS/AVERAGE) 1MA;MAX REVERSE VOLTAGE 36V;SUBSTRAT MATERIAL-SILICIUM;CONTACT CONSTRUCTION-METALLURGICALLY BONDED;QUALITY LEVEL 25;THERMAL RESISTANCE JUNCTION TO CASE 10CEL/W;MAX JUNCTION TEMP 175DEG C;TOTAL POWER DISSIPATION
~1: 1MW;PACKAGE TYPE D0202AA;PACKAGE MATERIAL-METAL ETANCHE;PACKAGE SHAPE-CYLINDRIQUE,SORTIES AXIALES;NUMBER OF PACKAGE PINS 2
Related Searches:
HSMS-2804L31
RECTIFIER,SEMICONDUCTOR DEVICE
NSN, MFG P/N
5961015762322
NSN
5961-01-576-2322
HSMS-2804L31
RECTIFIER,SEMICONDUCTOR DEVICE
NSN, MFG P/N
5961015762322
NSN
5961-01-576-2322
MFG
AVAGO TECHNOLOGIES U.S. INC. DIV AVAGO TECHNOLOGIES
Description
ABSOLUTE MAXIMUM CURRENT RATING PER CHARACTERISTIC: 15.00 MILLIAMPERES AVERAGE FORWARD CURRENT AVERAGED OVER A FULL 60-HZ CYCLE
ABSOLUTE MAXIMUM VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 70.0 BREAKDOWN VOLTAGE, DC AND 400.0 FORWARD VOLTAGE, TOTAL RMS
CIRCUIT CONNECTION STYLE DESIGNATOR: 2 CENTER TAP 1 PHASE
MATERIAL: SILICON
MOUNTING METHOD: TERMINAL
OPERATING TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
OVERALL HEIGHT: 1.2 MILLIMETERS MINIMUM AND 1.4 MILLIMETERS MAXIMUM
OVERALL LENGTH: 2.8 MILLIMETERS MINIMUM AND 3.1 MILLIMETERS MAXIMUM
OVERALL WIDTH: 2.2 MILLIMETERS MINIMUM AND 2.6 MILLIMETERS MAXIMUM
TERMINAL TYPE AND QUANTITY: 3 TAB
Related Searches:
JAN1N4370-1
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961015762365
NSN
5961-01-576-2365
JAN1N4370-1
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961015762365
NSN
5961-01-576-2365
MFG
MILITARY SPECIFICATIONS PROMULGATED BY MILITARY DEPARTMENTS/AGENCIES UNDER AUTHORITY OF DEFENSE STANDARDIZATION MANUAL 4120 3-M
Description
CURRENT RATING PER CHARACTERISTIC: 155.00 MILLIAMPERES MAXIMUM MAXIMUM DC CURRENT IN REVERSE BREAKDOWN REGION
DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: JAN1N4370-1
FEATURES PROVIDED: HERMETICALLY SEALED CASE
FUNCTION FOR WHICH DESIGNED: VOLTAGE REGULATOR
INCLOSURE MATERIAL: GLASS
MANUFACTURERS CODE: 81349
MOUNTING METHOD: TERMINAL
NON-DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: MIL-PRF-19500/127
OVERALL DIAMETER: 0.050 INCHES MINIMUM AND 0.090 INCHES MAXIMUM
OVERALL LENGTH: 0.120 INCHES MINIMUM AND 0.200 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
SPEC/STD CONTROLLING DATA:
SPECIAL FEATURES: HAS METALLURGICAL BOND
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 2.4 NOMINAL REGULATOR VOLTAGE
Related Searches:
CA74985-001
TRANSISTOR
NSN, MFG P/N
5961015762455
NSN
5961-01-576-2455
MFG
MOOG INC.
Description
TRANSISTOR
Related Searches:
FMBM5401
TRANSISTOR
NSN, MFG P/N
5961015762455
NSN
5961-01-576-2455
MFG
FAIRCHILD SEMICONDUCTOR CORPORATION
Description
TRANSISTOR
Related Searches:
1.5KE30CA
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961015762460
NSN
5961-01-576-2460
MFG
MOOG INC.
Description
III END ITEM IDENTIFICATION: CA70606-001 (19156), MONITOR ASSY, REMOTE STATUS
III PART NAME ASSIGNED BY CONTROLLING AGENCY: TRANSIENT SUPPRESSOR, DIODE
SPECIAL FEATURES: EVERSE STAND-OFF VOLTAGE 25.6V; BREAKDOWN VOLTAGE 28.5V MIN 31.5V MAX AT 1MA; MAX REVERSE LEAKAGE 5 MICROAMPS; MAX CLAMPING VOLATGE 41.4V; MAX PEAK PULSE CURRENT 36.0A
Related Searches:
C84733-001
SEMICONDUCTOR DEVICES,UNITIZED
NSN, MFG P/N
5961015762700
NSN
5961-01-576-2700
C84733-001
SEMICONDUCTOR DEVICES,UNITIZED
NSN, MFG P/N
5961015762700
NSN
5961-01-576-2700
MFG
MOOG INC.
Description
COMPONENT NAME AND QUANTITY: 2 TRANSISTOR
CURRENT RATING PER CHARACTERISTIC: 500.00 MILLIAMPERES NOMINAL COLLECTOR CURRENT, DC ALL TRANSISTOR
III END ITEM IDENTIFICATION: CA70606-001 (19156), MONITOR ASSY, REMOTE STATUS; CA70608-001 (19156) RECEIVER-TRANSMITTER
III PART NAME ASSIGNED BY CONTROLLING AGENCY: (DWG CAGE 19156) TRANSISTOR ARRAY, GENERAL PURPOSE AMPLIFIER; (DWG CAGE 7D893) NPN MULTI-CHIP GENERAL PURPOSE AMPLIFIER
INCLOSURE MATERIAL: PLASTIC
MOUNTING METHOD: TERMINAL
POWER RATING PER CHARACTERISTIC: 700.0 MILLIWATTS MAXIMUM TOTAL POWER DISSIPATION ALL TRANSISTOR
SEMICONDUCTOR MATERIAL: SILICON ALL TRANSISTOR
SPECIAL FEATURES: CASE: SUPER SOT-6; OPERATING AND STORAGE JUNCTION TEMPERATURE RANGE -55 TO +150 DEG C
TERMINAL TYPE AND QUANTITY: 6 TAB, SOLDER LUG
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 24.0 NOMINAL COLLECTOR TO EMITTER VOLTAGE, DC AND 75.0 NOMINAL COLLECTOR TO BASE VOLTAGE, DC AND 5.0 NOMINAL EMITTER TO BASE VOLTAGE, DC ALL TRANSISTOR
Related Searches:
FMB2222A
SEMICONDUCTOR DEVICES,UNITIZED
NSN, MFG P/N
5961015762700
NSN
5961-01-576-2700
FMB2222A
SEMICONDUCTOR DEVICES,UNITIZED
NSN, MFG P/N
5961015762700
NSN
5961-01-576-2700
MFG
FAIRCHILD SEMICONDUCTOR CORPORATION
Description
COMPONENT NAME AND QUANTITY: 2 TRANSISTOR
CURRENT RATING PER CHARACTERISTIC: 500.00 MILLIAMPERES NOMINAL COLLECTOR CURRENT, DC ALL TRANSISTOR
III END ITEM IDENTIFICATION: CA70606-001 (19156), MONITOR ASSY, REMOTE STATUS; CA70608-001 (19156) RECEIVER-TRANSMITTER
III PART NAME ASSIGNED BY CONTROLLING AGENCY: (DWG CAGE 19156) TRANSISTOR ARRAY, GENERAL PURPOSE AMPLIFIER; (DWG CAGE 7D893) NPN MULTI-CHIP GENERAL PURPOSE AMPLIFIER
INCLOSURE MATERIAL: PLASTIC
MOUNTING METHOD: TERMINAL
POWER RATING PER CHARACTERISTIC: 700.0 MILLIWATTS MAXIMUM TOTAL POWER DISSIPATION ALL TRANSISTOR
SEMICONDUCTOR MATERIAL: SILICON ALL TRANSISTOR
SPECIAL FEATURES: CASE: SUPER SOT-6; OPERATING AND STORAGE JUNCTION TEMPERATURE RANGE -55 TO +150 DEG C
TERMINAL TYPE AND QUANTITY: 6 TAB, SOLDER LUG
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 24.0 NOMINAL COLLECTOR TO EMITTER VOLTAGE, DC AND 75.0 NOMINAL COLLECTOR TO BASE VOLTAGE, DC AND 5.0 NOMINAL EMITTER TO BASE VOLTAGE, DC ALL TRANSISTOR
Related Searches:
SST177
TRANSISTOR
NSN, MFG P/N
5961015764232
NSN
5961-01-576-4232
MFG
SILICONIX INCORPORATED D IV SILICONIX
Description
III END ITEM IDENTIFICATION: P-CHANNEL JFETS
INCLOSURE MATERIAL: PLASTIC
SPECIAL FEATURES: LOW CAPACITANCE-5PF, FAST SWITCHING-TON-25NS
Related Searches:
HSMS-2802-TR1G
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961015764483
NSN
5961-01-576-4483
HSMS-2802-TR1G
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961015764483
NSN
5961-01-576-4483
MFG
AVAGO TECHNOLOGIES U.S. INC. DIV AVAGO TECHNOLOGIES
Description
III PART NAME ASSIGNED BY CONTROLLING AGENCY: DIODE; SURFACE MOUNT RF SCHOTTKY BARRIER DIODES
SPECIAL FEATURES: SURFACE MOUNT PACKAGE; HIGH BREAKDOWN VOLTAGE; LOW FIT (FAILURE IN TIME) RATE; SIX-SIGMA QUALITY LEVEL; DESIGNED FOR BOTH ANALOG AND DIGITAL APPLICATIONS; OPTIMIZED FOR HIGH VOLTAGE APPLICATIONS; SERIES CONFIGURATION; 25 DEG C, SINGLE DIODE
Related Searches:
91763292
TRANSISTOR
NSN, MFG P/N
5961015764901
NSN
5961-01-576-4901
MFG
THALES
Description
III END ITEM IDENTIFICATION: TRANSISTOR
III PART NAME ASSIGNED BY CONTROLLING AGENCY: IRFL9014 HEXFET POWER MOSFET
SPECIAL FEATURES: SURFACE MOUNT; AVAIBLE IN TAPE AND REEL; DYNAMIC DV/DT RATING; REPETITIVE AVALANCHE RATED; P-CHANNEL; FAST SWITCHING; EASE OF PARALLELING
Related Searches:
IRFL9014
TRANSISTOR
NSN, MFG P/N
5961015764901
NSN
5961-01-576-4901
MFG
INTERNATIONAL RECTIFIER CORPORATION
Description
III END ITEM IDENTIFICATION: TRANSISTOR
III PART NAME ASSIGNED BY CONTROLLING AGENCY: IRFL9014 HEXFET POWER MOSFET
SPECIAL FEATURES: SURFACE MOUNT; AVAIBLE IN TAPE AND REEL; DYNAMIC DV/DT RATING; REPETITIVE AVALANCHE RATED; P-CHANNEL; FAST SWITCHING; EASE OF PARALLELING
Related Searches:
A306
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961015765113
NSN
5961-01-576-5113
MFG
AMERICAN MICROSEMICONDUCTOR INC
Description
III END ITEM IDENTIFICATION: CCA, RATE OF TURN SENSOR, B1-B AIRCRAFT
III PART NAME ASSIGNED BY CONTROLLING AGENCY: DIODE
Related Searches:
RD9AN
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961015765116
NSN
5961-01-576-5116
MFG
ROCKWELL COLLINS INC. DBA GOVERNMENT SYSTEMS DIV GOVERNMENT SYSTEMS
Description
III END ITEM IDENTIFICATION: CCA, RATE OF RETURN SENSOR, B1-B AIRCRAFT
III PART NAME ASSIGNED BY CONTROLLING AGENCY: ZENER DIODE
Related Searches:
91819801
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961015765382
NSN
5961-01-576-5382
MFG
THALES
Description
III END ITEM IDENTIFICATION: SEMICONDUCTOR DEVICE, DIODE
III PART NAME ASSIGNED BY CONTROLLING AGENCY: SURFACE MOUNT HERMETICALLY SEALED SUPERFAST RECTIFIER DIODE
SPECIAL FEATURES: ULTR LOW REVERSE RECOVERY TIME; ULTRA LOW SWITCHING LOSSES; SOFT, NON SNAP-OFF RECOVERY CHARATERISTICS; GLASS PASSIVATED FOR HERMETIC SEALING; REVERSE AVALANCHE CAPABILITY; MINIATURE PACKAGE SIZE
Related Searches:
PFF0SMD
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961015765382
NSN
5961-01-576-5382
MFG
SEMTECH CORPORATION
Description
III END ITEM IDENTIFICATION: SEMICONDUCTOR DEVICE, DIODE
III PART NAME ASSIGNED BY CONTROLLING AGENCY: SURFACE MOUNT HERMETICALLY SEALED SUPERFAST RECTIFIER DIODE
SPECIAL FEATURES: ULTR LOW REVERSE RECOVERY TIME; ULTRA LOW SWITCHING LOSSES; SOFT, NON SNAP-OFF RECOVERY CHARATERISTICS; GLASS PASSIVATED FOR HERMETIC SEALING; REVERSE AVALANCHE CAPABILITY; MINIATURE PACKAGE SIZE
