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5962-01-332-4640

20 Products

EL2020CJ

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962013324640

NSN

5962-01-332-4640

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EL2020CJ

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962013324640

NSN

5962-01-332-4640

MFG

ELANTEC INC

Description

INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC
OPERATING TEMP RANGE: -25.0 TO 85.0 DEG CELSIUS

95232877

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962013324641

NSN

5962-01-332-4641

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95232877

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962013324641

NSN

5962-01-332-4641

MFG

L-3 COMMUNICATIONS CORPORATION DBA L3 COMMUNICATION AVIATION RECORDERS DIVISION DIV L3 COMMUNICATIONS CORPORATION AVIATION RECORDERS DIVISION

Description

DESIGN FUNCTION AND QUANTITY: 1 REGISTER, D-TYPE
INCLOSURE CONFIGURATION: DUAL-IN-LINE
OUTPUT LOGIC FORM: COMPLEMENTARY-METAL OXIDE-SEMICONDUCTOR LOGIC

CD4076BE

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962013324641

NSN

5962-01-332-4641

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CD4076BE

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962013324641

NSN

5962-01-332-4641

MFG

HARRIS CORP DBA GOVERNMENT COMMUNICATION SYSTEMS DIV

Description

DESIGN FUNCTION AND QUANTITY: 1 REGISTER, D-TYPE
INCLOSURE CONFIGURATION: DUAL-IN-LINE
OUTPUT LOGIC FORM: COMPLEMENTARY-METAL OXIDE-SEMICONDUCTOR LOGIC

587R447H01

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962013324642

NSN

5962-01-332-4642

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587R447H01

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962013324642

NSN

5962-01-332-4642

MFG

NORTHROP GRUMMAN SYSTEMS CORPORATION DIV NORTHROP GRUMMAN SYSTEMS CORPORATION ELECTRONIC SYSTEMS

Description

BODY HEIGHT: 0.115 INCHES MAXIMUM
BODY LENGTH: 0.945 INCHES MINIMUM AND 0.960 INCHES MAXIMUM
BODY WIDTH: 0.945 INCHES MINIMUM AND 0.960 INCHES MAXIMUM
DESIGN FUNCTION AND QUANTITY: 1 GATE, ARRAY
FEATURES PROVIDED: MONOLITHIC
III PRECIOUS MATERIAL: GOLD
III PRECIOUS MATERIAL AND LOCATION: EXPOSED METAL SURFACES GOLD
INCLOSURE CONFIGURATION: LEADLESS FLAT PACK
INCLOSURE MATERIAL: CERAMIC
INPUT CIRCUIT PATTERN: 45 INPUT
MAXIMUM POWER DISSIPATION RATING: 8.1 MILLIWATTS
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: EMITTER-COUPLED LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS

Q3500-0045C

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962013324642

NSN

5962-01-332-4642

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Q3500-0045C

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962013324642

NSN

5962-01-332-4642

MFG

APPLIED MICRO CIRCUITS CORPORATION DBA AMCC SALES CORPORATION

Description

BODY HEIGHT: 0.115 INCHES MAXIMUM
BODY LENGTH: 0.945 INCHES MINIMUM AND 0.960 INCHES MAXIMUM
BODY WIDTH: 0.945 INCHES MINIMUM AND 0.960 INCHES MAXIMUM
DESIGN FUNCTION AND QUANTITY: 1 GATE, ARRAY
FEATURES PROVIDED: MONOLITHIC
III PRECIOUS MATERIAL: GOLD
III PRECIOUS MATERIAL AND LOCATION: EXPOSED METAL SURFACES GOLD
INCLOSURE CONFIGURATION: LEADLESS FLAT PACK
INCLOSURE MATERIAL: CERAMIC
INPUT CIRCUIT PATTERN: 45 INPUT
MAXIMUM POWER DISSIPATION RATING: 8.1 MILLIWATTS
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: EMITTER-COUPLED LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS

453554-1

MICROCIRCUIT,MEMORY

NSN, MFG P/N

5962013324643

NSN

5962-01-332-4643

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453554-1

MICROCIRCUIT,MEMORY

NSN, MFG P/N

5962013324643

NSN

5962-01-332-4643

MFG

EDO CORP DIV EDO CORPORATION ANTENNA PRODUCTS & TECHNOLOGIES

Description

(NON-CORE DATA) BIT QUANTITY: 16384
FEATURES PROVIDED: BIPOLAR AND BURN IN AND MONOLITHIC AND PROGRAMMABLE AND SCHOTTKY
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC
INPUT CIRCUIT PATTERN: 11 INPUT
MAXIMUM POWER DISSIPATION RATING: 1.02 WATTS
MEMORY DEVICE TYPE: ROM
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 24 PRINTED CIRCUIT
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: -0.5 VOLTS MAXIMUM POWER SOURCE AND 7.0 VOLTS MAXIMUM POWER SOURCE

AM27S291A/BLA

MICROCIRCUIT,MEMORY

NSN, MFG P/N

5962013324643

NSN

5962-01-332-4643

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AM27S291A/BLA

MICROCIRCUIT,MEMORY

NSN, MFG P/N

5962013324643

NSN

5962-01-332-4643

MFG

2 MB DISTRIBUTION

Description

(NON-CORE DATA) BIT QUANTITY: 16384
FEATURES PROVIDED: BIPOLAR AND BURN IN AND MONOLITHIC AND PROGRAMMABLE AND SCHOTTKY
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC
INPUT CIRCUIT PATTERN: 11 INPUT
MAXIMUM POWER DISSIPATION RATING: 1.02 WATTS
MEMORY DEVICE TYPE: ROM
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 24 PRINTED CIRCUIT
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: -0.5 VOLTS MAXIMUM POWER SOURCE AND 7.0 VOLTS MAXIMUM POWER SOURCE

JBP38S165MJT

MICROCIRCUIT,MEMORY

NSN, MFG P/N

5962013324643

NSN

5962-01-332-4643

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JBP38S165MJT

MICROCIRCUIT,MEMORY

NSN, MFG P/N

5962013324643

NSN

5962-01-332-4643

MFG

TEXAS INSTRUMENTS INCORPORATED DBA TEXAS INSTRUMENTS DIV SEMICONDUCTOR GROUP

Description

(NON-CORE DATA) BIT QUANTITY: 16384
FEATURES PROVIDED: BIPOLAR AND BURN IN AND MONOLITHIC AND PROGRAMMABLE AND SCHOTTKY
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC
INPUT CIRCUIT PATTERN: 11 INPUT
MAXIMUM POWER DISSIPATION RATING: 1.02 WATTS
MEMORY DEVICE TYPE: ROM
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 24 PRINTED CIRCUIT
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: -0.5 VOLTS MAXIMUM POWER SOURCE AND 7.0 VOLTS MAXIMUM POWER SOURCE

ROM/PROM

MICROCIRCUIT,MEMORY

NSN, MFG P/N

5962013324643

NSN

5962-01-332-4643

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ROM/PROM

MICROCIRCUIT,MEMORY

NSN, MFG P/N

5962013324643

NSN

5962-01-332-4643

MFG

DLA LAND AND MARITIME

Description

(NON-CORE DATA) BIT QUANTITY: 16384
FEATURES PROVIDED: BIPOLAR AND BURN IN AND MONOLITHIC AND PROGRAMMABLE AND SCHOTTKY
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC
INPUT CIRCUIT PATTERN: 11 INPUT
MAXIMUM POWER DISSIPATION RATING: 1.02 WATTS
MEMORY DEVICE TYPE: ROM
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 24 PRINTED CIRCUIT
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: -0.5 VOLTS MAXIMUM POWER SOURCE AND 7.0 VOLTS MAXIMUM POWER SOURCE

924436-1

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962013324644

NSN

5962-01-332-4644

View More Info

924436-1

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962013324644

NSN

5962-01-332-4644

MFG

NORTHROP GRUMMAN GUIDANCE AND ELECTRONICS COMPANY INC. DBA NAVIGATION SYSTEMS DIVISION DIV NAVIGATION SYSTEMS DIVISION

Description

BODY HEIGHT: 0.210 INCHES MAXIMUM
BODY LENGTH: 1.890 INCHES MINIMUM AND 1.900 INCHES MAXIMUM
BODY WIDTH: 0.770 INCHES MINIMUM AND 0.780 INCHES MAXIMUM
DESIGN FUNCTION AND QUANTITY: 1 MICROPROCESSOR
FEATURES PROVIDED: HYBRID AND ELECTROSTATIC SENSITIVE
III PRECIOUS MATERIAL: GOLD
III PRECIOUS MATERIAL AND LOCATION: TERMINAL SURFACES GOLD
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC AND METAL
INPUT CIRCUIT PATTERN: 6 INPUT
OPERATING TEMP RANGE: 0.0 TO 70.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
STORAGE TEMP RANGE: -55.0 TO 135.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: GOLD
TERMINAL TYPE AND QUANTITY: 36 PRINTED CIRCUIT
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: 15.0 VOLTS MAXIMUM POWER SOURCE

HDP-4-3

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962013324644

NSN

5962-01-332-4644

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HDP-4-3

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962013324644

NSN

5962-01-332-4644

MFG

DATA DEVICE CORPORATION

Description

BODY HEIGHT: 0.210 INCHES MAXIMUM
BODY LENGTH: 1.890 INCHES MINIMUM AND 1.900 INCHES MAXIMUM
BODY WIDTH: 0.770 INCHES MINIMUM AND 0.780 INCHES MAXIMUM
DESIGN FUNCTION AND QUANTITY: 1 MICROPROCESSOR
FEATURES PROVIDED: HYBRID AND ELECTROSTATIC SENSITIVE
III PRECIOUS MATERIAL: GOLD
III PRECIOUS MATERIAL AND LOCATION: TERMINAL SURFACES GOLD
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC AND METAL
INPUT CIRCUIT PATTERN: 6 INPUT
OPERATING TEMP RANGE: 0.0 TO 70.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
STORAGE TEMP RANGE: -55.0 TO 135.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: GOLD
TERMINAL TYPE AND QUANTITY: 36 PRINTED CIRCUIT
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: 15.0 VOLTS MAXIMUM POWER SOURCE

616483

MICROCIRCUIT,MEMORY

NSN, MFG P/N

5962013324645

NSN

5962-01-332-4645

View More Info

616483

MICROCIRCUIT,MEMORY

NSN, MFG P/N

5962013324645

NSN

5962-01-332-4645

MFG

RAYTHEON COMPANY DBA RAYTHEON

Description

(NON-CORE DATA) BIT QUANTITY: 16384
(NON-CORE DATA) WORD QUANTITY: 2048
BODY HEIGHT: 0.145 INCHES MINIMUM AND 0.175 INCHES MAXIMUM
BODY LENGTH: 1.235 INCHES MINIMUM AND 1.285 INCHES MAXIMUM
BODY WIDTH: 0.515 INCHES MINIMUM AND 0.600 INCHES MAXIMUM
FEATURES PROVIDED: ULTRAVIOLET ERASABLE AND PROGRAMMABLE AND HERMETICALLY SEALED AND W/ENABLE AND W/BUFFERED OUTPUT AND ELECTROSTATIC SENSITIVE
III END ITEM IDENTIFICATION: 5895-01-167-7655 RECEIVING SET,RADIO
III OVERALL HEIGHT: 0.345 INCHES NOMINAL
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC
INPUT CIRCUIT PATTERN: 13 INPUT
MAXIMUM POWER DISSIPATION RATING: 525.0 MILLIWATTS
MEMORY DEVICE TYPE: ROM
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: METAL OXIDE-SEMICONDUCTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 24 PRINTED CIRCUIT
TEST DATA DOCUMENT: 96906-MIL-STD-883 STANDARD
VOLTAGE RATING AND

646164-902

MICROCIRCUIT,MEMORY

NSN, MFG P/N

5962013324645

NSN

5962-01-332-4645

View More Info

646164-902

MICROCIRCUIT,MEMORY

NSN, MFG P/N

5962013324645

NSN

5962-01-332-4645

MFG

RAYTHEON COMPANY DBA RAYTHEON

Description

(NON-CORE DATA) BIT QUANTITY: 16384
(NON-CORE DATA) WORD QUANTITY: 2048
BODY HEIGHT: 0.145 INCHES MINIMUM AND 0.175 INCHES MAXIMUM
BODY LENGTH: 1.235 INCHES MINIMUM AND 1.285 INCHES MAXIMUM
BODY WIDTH: 0.515 INCHES MINIMUM AND 0.600 INCHES MAXIMUM
FEATURES PROVIDED: ULTRAVIOLET ERASABLE AND PROGRAMMABLE AND HERMETICALLY SEALED AND W/ENABLE AND W/BUFFERED OUTPUT AND ELECTROSTATIC SENSITIVE
III END ITEM IDENTIFICATION: 5895-01-167-7655 RECEIVING SET,RADIO
III OVERALL HEIGHT: 0.345 INCHES NOMINAL
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC
INPUT CIRCUIT PATTERN: 13 INPUT
MAXIMUM POWER DISSIPATION RATING: 525.0 MILLIWATTS
MEMORY DEVICE TYPE: ROM
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: METAL OXIDE-SEMICONDUCTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 24 PRINTED CIRCUIT
TEST DATA DOCUMENT: 96906-MIL-STD-883 STANDARD
VOLTAGE RATING AND

MD2716

MICROCIRCUIT,MEMORY

NSN, MFG P/N

5962013324645

NSN

5962-01-332-4645

View More Info

MD2716

MICROCIRCUIT,MEMORY

NSN, MFG P/N

5962013324645

NSN

5962-01-332-4645

MFG

INTEL CORP SALES OFFICE

Description

(NON-CORE DATA) BIT QUANTITY: 16384
(NON-CORE DATA) WORD QUANTITY: 2048
BODY HEIGHT: 0.145 INCHES MINIMUM AND 0.175 INCHES MAXIMUM
BODY LENGTH: 1.235 INCHES MINIMUM AND 1.285 INCHES MAXIMUM
BODY WIDTH: 0.515 INCHES MINIMUM AND 0.600 INCHES MAXIMUM
FEATURES PROVIDED: ULTRAVIOLET ERASABLE AND PROGRAMMABLE AND HERMETICALLY SEALED AND W/ENABLE AND W/BUFFERED OUTPUT AND ELECTROSTATIC SENSITIVE
III END ITEM IDENTIFICATION: 5895-01-167-7655 RECEIVING SET,RADIO
III OVERALL HEIGHT: 0.345 INCHES NOMINAL
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC
INPUT CIRCUIT PATTERN: 13 INPUT
MAXIMUM POWER DISSIPATION RATING: 525.0 MILLIWATTS
MEMORY DEVICE TYPE: ROM
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: METAL OXIDE-SEMICONDUCTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 24 PRINTED CIRCUIT
TEST DATA DOCUMENT: 96906-MIL-STD-883 STANDARD
VOLTAGE RATING AND

ROM/PROM FAMILY 020

MICROCIRCUIT,MEMORY

NSN, MFG P/N

5962013324645

NSN

5962-01-332-4645

View More Info

ROM/PROM FAMILY 020

MICROCIRCUIT,MEMORY

NSN, MFG P/N

5962013324645

NSN

5962-01-332-4645

MFG

DLA LAND AND MARITIME

Description

(NON-CORE DATA) BIT QUANTITY: 16384
(NON-CORE DATA) WORD QUANTITY: 2048
BODY HEIGHT: 0.145 INCHES MINIMUM AND 0.175 INCHES MAXIMUM
BODY LENGTH: 1.235 INCHES MINIMUM AND 1.285 INCHES MAXIMUM
BODY WIDTH: 0.515 INCHES MINIMUM AND 0.600 INCHES MAXIMUM
FEATURES PROVIDED: ULTRAVIOLET ERASABLE AND PROGRAMMABLE AND HERMETICALLY SEALED AND W/ENABLE AND W/BUFFERED OUTPUT AND ELECTROSTATIC SENSITIVE
III END ITEM IDENTIFICATION: 5895-01-167-7655 RECEIVING SET,RADIO
III OVERALL HEIGHT: 0.345 INCHES NOMINAL
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC
INPUT CIRCUIT PATTERN: 13 INPUT
MAXIMUM POWER DISSIPATION RATING: 525.0 MILLIWATTS
MEMORY DEVICE TYPE: ROM
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: METAL OXIDE-SEMICONDUCTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 24 PRINTED CIRCUIT
TEST DATA DOCUMENT: 96906-MIL-STD-883 STANDARD
VOLTAGE RATING AND

616483

MICROCIRCUIT,MEMORY

NSN, MFG P/N

5962013324646

NSN

5962-01-332-4646

View More Info

616483

MICROCIRCUIT,MEMORY

NSN, MFG P/N

5962013324646

NSN

5962-01-332-4646

MFG

RAYTHEON COMPANY DBA RAYTHEON

Description

(NON-CORE DATA) BIT QUANTITY: 16384
(NON-CORE DATA) WORD QUANTITY: 2048
BODY HEIGHT: 0.145 INCHES MINIMUM AND 0.175 INCHES MAXIMUM
BODY LENGTH: 1.235 INCHES MINIMUM AND 1.285 INCHES MAXIMUM
BODY WIDTH: 0.515 INCHES MINIMUM AND 0.600 INCHES MAXIMUM
FEATURES PROVIDED: PROGRAMMED AND BURN IN AND HERMETICALLY SEALED AND ULTRAVIOLET ERASABLE AND ELECTROSTATIC SENSITIVE
III END ITEM IDENTIFICATION: 5895-01-167-7655 RECEIVING SET,RADIO
III OVERALL HEIGHT: 0.345 INCHES NOMINAL
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC
INPUT CIRCUIT PATTERN: 13 INPUT
MAXIMUM POWER DISSIPATION RATING: 525.0 MILLIWATTS
MEMORY DEVICE TYPE: EPROM
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: METAL OXIDE-SEMICONDUCTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 24 PRINTED CIRCUIT
TEST DATA DOCUMENT: 96906-MIL-STD-883 STANDARD
VOLTAGE RATING AND TYPE PER CHARACTERISTIC

646165-902

MICROCIRCUIT,MEMORY

NSN, MFG P/N

5962013324646

NSN

5962-01-332-4646

View More Info

646165-902

MICROCIRCUIT,MEMORY

NSN, MFG P/N

5962013324646

NSN

5962-01-332-4646

MFG

RAYTHEON COMPANY DBA RAYTHEON

Description

(NON-CORE DATA) BIT QUANTITY: 16384
(NON-CORE DATA) WORD QUANTITY: 2048
BODY HEIGHT: 0.145 INCHES MINIMUM AND 0.175 INCHES MAXIMUM
BODY LENGTH: 1.235 INCHES MINIMUM AND 1.285 INCHES MAXIMUM
BODY WIDTH: 0.515 INCHES MINIMUM AND 0.600 INCHES MAXIMUM
FEATURES PROVIDED: PROGRAMMED AND BURN IN AND HERMETICALLY SEALED AND ULTRAVIOLET ERASABLE AND ELECTROSTATIC SENSITIVE
III END ITEM IDENTIFICATION: 5895-01-167-7655 RECEIVING SET,RADIO
III OVERALL HEIGHT: 0.345 INCHES NOMINAL
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC
INPUT CIRCUIT PATTERN: 13 INPUT
MAXIMUM POWER DISSIPATION RATING: 525.0 MILLIWATTS
MEMORY DEVICE TYPE: EPROM
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: METAL OXIDE-SEMICONDUCTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 24 PRINTED CIRCUIT
TEST DATA DOCUMENT: 96906-MIL-STD-883 STANDARD
VOLTAGE RATING AND TYPE PER CHARACTERISTIC

646165-9023

MICROCIRCUIT,MEMORY

NSN, MFG P/N

5962013324646

NSN

5962-01-332-4646

View More Info

646165-9023

MICROCIRCUIT,MEMORY

NSN, MFG P/N

5962013324646

NSN

5962-01-332-4646

MFG

RAYTHEON COMPANY DBA RAYTHEON

Description

(NON-CORE DATA) BIT QUANTITY: 16384
(NON-CORE DATA) WORD QUANTITY: 2048
BODY HEIGHT: 0.145 INCHES MINIMUM AND 0.175 INCHES MAXIMUM
BODY LENGTH: 1.235 INCHES MINIMUM AND 1.285 INCHES MAXIMUM
BODY WIDTH: 0.515 INCHES MINIMUM AND 0.600 INCHES MAXIMUM
FEATURES PROVIDED: PROGRAMMED AND BURN IN AND HERMETICALLY SEALED AND ULTRAVIOLET ERASABLE AND ELECTROSTATIC SENSITIVE
III END ITEM IDENTIFICATION: 5895-01-167-7655 RECEIVING SET,RADIO
III OVERALL HEIGHT: 0.345 INCHES NOMINAL
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC
INPUT CIRCUIT PATTERN: 13 INPUT
MAXIMUM POWER DISSIPATION RATING: 525.0 MILLIWATTS
MEMORY DEVICE TYPE: EPROM
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: METAL OXIDE-SEMICONDUCTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 24 PRINTED CIRCUIT
TEST DATA DOCUMENT: 96906-MIL-STD-883 STANDARD
VOLTAGE RATING AND TYPE PER CHARACTERISTIC

MD2716

MICROCIRCUIT,MEMORY

NSN, MFG P/N

5962013324646

NSN

5962-01-332-4646

View More Info

MD2716

MICROCIRCUIT,MEMORY

NSN, MFG P/N

5962013324646

NSN

5962-01-332-4646

MFG

INTEL CORP SALES OFFICE

Description

(NON-CORE DATA) BIT QUANTITY: 16384
(NON-CORE DATA) WORD QUANTITY: 2048
BODY HEIGHT: 0.145 INCHES MINIMUM AND 0.175 INCHES MAXIMUM
BODY LENGTH: 1.235 INCHES MINIMUM AND 1.285 INCHES MAXIMUM
BODY WIDTH: 0.515 INCHES MINIMUM AND 0.600 INCHES MAXIMUM
FEATURES PROVIDED: PROGRAMMED AND BURN IN AND HERMETICALLY SEALED AND ULTRAVIOLET ERASABLE AND ELECTROSTATIC SENSITIVE
III END ITEM IDENTIFICATION: 5895-01-167-7655 RECEIVING SET,RADIO
III OVERALL HEIGHT: 0.345 INCHES NOMINAL
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC
INPUT CIRCUIT PATTERN: 13 INPUT
MAXIMUM POWER DISSIPATION RATING: 525.0 MILLIWATTS
MEMORY DEVICE TYPE: EPROM
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: METAL OXIDE-SEMICONDUCTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 24 PRINTED CIRCUIT
TEST DATA DOCUMENT: 96906-MIL-STD-883 STANDARD
VOLTAGE RATING AND TYPE PER CHARACTERISTIC

ROM/PROM FAMILY 020

MICROCIRCUIT,MEMORY

NSN, MFG P/N

5962013324646

NSN

5962-01-332-4646

View More Info

ROM/PROM FAMILY 020

MICROCIRCUIT,MEMORY

NSN, MFG P/N

5962013324646

NSN

5962-01-332-4646

MFG

DLA LAND AND MARITIME

Description

(NON-CORE DATA) BIT QUANTITY: 16384
(NON-CORE DATA) WORD QUANTITY: 2048
BODY HEIGHT: 0.145 INCHES MINIMUM AND 0.175 INCHES MAXIMUM
BODY LENGTH: 1.235 INCHES MINIMUM AND 1.285 INCHES MAXIMUM
BODY WIDTH: 0.515 INCHES MINIMUM AND 0.600 INCHES MAXIMUM
FEATURES PROVIDED: PROGRAMMED AND BURN IN AND HERMETICALLY SEALED AND ULTRAVIOLET ERASABLE AND ELECTROSTATIC SENSITIVE
III END ITEM IDENTIFICATION: 5895-01-167-7655 RECEIVING SET,RADIO
III OVERALL HEIGHT: 0.345 INCHES NOMINAL
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC
INPUT CIRCUIT PATTERN: 13 INPUT
MAXIMUM POWER DISSIPATION RATING: 525.0 MILLIWATTS
MEMORY DEVICE TYPE: EPROM
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: METAL OXIDE-SEMICONDUCTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 24 PRINTED CIRCUIT
TEST DATA DOCUMENT: 96906-MIL-STD-883 STANDARD
VOLTAGE RATING AND TYPE PER CHARACTERISTIC