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5961-00-140-5432
20 Products
1809449
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961001405432
NSN
5961-00-140-5432
MFG
NORTHROP GRUMMAN SYSTEMS CORPORATION
Description
CURRENT RATING PER CHARACTERISTIC: 300.00 AMPERES MAXIMUM VOLTAGE REGULATOR DIODE CURRENT
INCLOSURE MATERIAL: PLASTIC
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 175.0 DEG CELSIUS JUNCTION
MOUNTING FACILITY QUANTITY: 1
MOUNTING METHOD: UNTHREADED HOLE
OVERALL DIAMETER: 0.780 INCHES MAXIMUM
OVERALL LENGTH: 1.730 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 10.0 WATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 28.0 MAXIMUM NOMINAL REGULATOR VOLTAGE
Related Searches:
SZ51265K
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961001400698
NSN
5961-00-140-0698
MFG
FREESCALE SEMICONDUCTOR INC.
Description
CURRENT RATING PER CHARACTERISTIC: 49.00 MILLIAMPERES MAXIMUM VOLTAGE REGULATOR DIODE CURRENT
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 150.0 DEG CELSIUS CASE
MOUNTING FACILITY QUANTITY: 1
MOUNTING METHOD: THREADED STUD
NOMINAL THREAD SIZE: 0.190 INCHES
OVERALL LENGTH: 0.405 INCHES MAXIMUM
OVERALL WIDTH ACROSS FLATS: 0.437 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 10.0 WATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 1 TAB, SOLDER LUG AND 1 THREADED STUD
THREAD SERIES DESIGNATOR: UNF
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 5.3 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-BASE, EMITTER OPEN
Related Searches:
130072-013
RECTIFIER,SEMICONDUCTOR DEVICE
NSN, MFG P/N
5961001400725
NSN
5961-00-140-0725
130072-013
RECTIFIER,SEMICONDUCTOR DEVICE
NSN, MFG P/N
5961001400725
NSN
5961-00-140-0725
MFG
SCJ ASSOCIATES INC.
Description
ABSOLUTE MAXIMUM CURRENT RATING PER CHARACTERISTIC: 5.00 MICROAMPERES REVERSE CURRENT, DC
ABSOLUTE MAXIMUM VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 3000.0 PEAK INVERSE VOLTAGE
CIRCUIT CONNECTION STYLE DESIGNATOR: 8 BRIDGE 3 PHASE
MATERIAL: SILICON
MOUNTING METHOD: UNTHREADED HOLE
OPERATING TEMP RANGE: -65.0 TO 125.0 DEG CELSIUS
OVERALL HEIGHT: 1.120 INCHES MINIMUM AND 1.750 INCHES MAXIMUM
OVERALL LENGTH: 2.500 INCHES NOMINAL
OVERALL WIDTH: 1.119 INCHES MINIMUM AND 1.121 INCHES MAXIMUM
PRECIOUS MATERIAL AND LOCATION: TERMINAL SURFACES SILVER
TERMINAL TYPE AND QUANTITY: 5 TURRET
Related Searches:
400000-001
RECTIFIER,SEMICONDUCTOR DEVICE
NSN, MFG P/N
5961001400725
NSN
5961-00-140-0725
400000-001
RECTIFIER,SEMICONDUCTOR DEVICE
NSN, MFG P/N
5961001400725
NSN
5961-00-140-0725
MFG
C N T R INC
Description
ABSOLUTE MAXIMUM CURRENT RATING PER CHARACTERISTIC: 5.00 MICROAMPERES REVERSE CURRENT, DC
ABSOLUTE MAXIMUM VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 3000.0 PEAK INVERSE VOLTAGE
CIRCUIT CONNECTION STYLE DESIGNATOR: 8 BRIDGE 3 PHASE
MATERIAL: SILICON
MOUNTING METHOD: UNTHREADED HOLE
OPERATING TEMP RANGE: -65.0 TO 125.0 DEG CELSIUS
OVERALL HEIGHT: 1.120 INCHES MINIMUM AND 1.750 INCHES MAXIMUM
OVERALL LENGTH: 2.500 INCHES NOMINAL
OVERALL WIDTH: 1.119 INCHES MINIMUM AND 1.121 INCHES MAXIMUM
PRECIOUS MATERIAL AND LOCATION: TERMINAL SURFACES SILVER
TERMINAL TYPE AND QUANTITY: 5 TURRET
Related Searches:
2N4276
TRANSISTOR
NSN, MFG P/N
5961001401071
NSN
5961-00-140-1071
MFG
FREESCALE SEMICONDUCTOR INC.
Description
CURRENT RATING PER CHARACTERISTIC: 60.00 AMPERES NOMINAL COLLECTOR CURRENT, DC
DESIGN CONTROL REFERENCE: 2N4276
ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE: COLLECTOR
FEATURES PROVIDED: HERMETICALLY SEALED CASE
III END ITEM IDENTIFICATION: COMPUTER UPDATE EQUIPMENT (CUE)
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: JUNCTION CONTACT
MANUFACTURERS CODE: 04713
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 125.0 DEG CELSIUS JUNCTION
MOUNTING FACILITY QUANTITY: 2
MOUNTING METHOD: UNTHREADED HOLE
OVERALL DIAMETER: 0.875 INCHES MAXIMUM
OVERALL HEIGHT: 0.762 INCHES MAXIMUM
OVERALL LENGTH: 0.250 INCHES MINIMUM AND 0.450 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 170.0 WATTS MAXIMUM COLLECTOR POWER DISSIPATION
SEMICONDUCTOR MATERIAL: GERMANIUM
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: PNP
TERMINAL TYPE AND QUANTITY: 2 PIN
THE MANUFACTURERS DATA:
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 30.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-BASE,
Related Searches:
619361-1
TRANSISTOR
NSN, MFG P/N
5961001402889
NSN
5961-00-140-2889
MFG
RAYTHEON COMPANY DBA RAYTHEON
Description
DESIGN CONTROL REFERENCE: 619361-1
ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE: COLLECTOR
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INTERNAL CONFIGURATION: JUNCTION CONTACT
MANUFACTURERS CODE: 37695
OVERALL HEIGHT: 0.250 INCHES MINIMUM AND 0.340 INCHES MAXIMUM
OVERALL LENGTH: 1.252 INCHES MAXIMUM
OVERALL WIDTH: 0.700 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: NPN
TERMINAL TYPE AND QUANTITY: 3 PIN
THE MANUFACTURERS DATA:
Related Searches:
7921857
TRANSISTOR
NSN, MFG P/N
5961001402906
NSN
5961-00-140-2906
MFG
INTERNATIONAL BUSINESS MACHINES CORP
Description
DESIGN CONTROL REFERENCE: 7921857
ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE: COLLECTOR
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INTERNAL CONFIGURATION: JUNCTION CONTACT
MANUFACTURERS CODE: 20234
OVERALL HEIGHT: 0.250 INCHES MINIMUM AND 0.450 INCHES MAXIMUM
OVERALL LENGTH: 1.553 INCHES MINIMUM AND 1.573 INCHES MAXIMUM
OVERALL WIDTH: 1.050 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: GERMANIUM
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: PNP
TERMINAL TYPE AND QUANTITY: 2 PIN
THE MANUFACTURERS DATA:
Related Searches:
7531463
TRANSISTOR
NSN, MFG P/N
5961001402910
NSN
5961-00-140-2910
MFG
LOCKHEED MARTIN CORP NAVAL ELECTRONICS & SURVEILLANCE SYSTEMS
Description
CURRENT RATING PER CHARACTERISTIC: 30.00 MILLIAMPERES MAXIMUM COLLECTOR CURRENT, DC
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: JUNCTION CONTACT
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.209 INCHES MINIMUM AND 0.230 INCHES MAXIMUM
OVERALL HEIGHT: 0.170 INCHES MINIMUM AND 0.210 INCHES MAXIMUM
OVERALL LENGTH: 0.170 INCHES MINIMUM AND 0.210 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 200.0 MILLIWATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: PNP
TERMINAL CIRCLE DIAMETER: 0.100 INCHES NOMINAL
TERMINAL LENGTH: 0.500 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 4 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 30.0 MAXIMUM COLLECTOR TO BASE VOLTAGE/STATIC/EMITTER OPEN AND 30.0 MAXIMUM COLLECTOR TO EMITTER VOLTAGE/STATIC/BASE OPEN AND 3.0 MAXIMUM EMITTER TO BASE VOLTAGE, DC
Related Searches:
7531463P1
TRANSISTOR
NSN, MFG P/N
5961001402910
NSN
5961-00-140-2910
MFG
SEMITRONICS CORP
Description
CURRENT RATING PER CHARACTERISTIC: 30.00 MILLIAMPERES MAXIMUM COLLECTOR CURRENT, DC
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: JUNCTION CONTACT
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.209 INCHES MINIMUM AND 0.230 INCHES MAXIMUM
OVERALL HEIGHT: 0.170 INCHES MINIMUM AND 0.210 INCHES MAXIMUM
OVERALL LENGTH: 0.170 INCHES MINIMUM AND 0.210 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 200.0 MILLIWATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: PNP
TERMINAL CIRCLE DIAMETER: 0.100 INCHES NOMINAL
TERMINAL LENGTH: 0.500 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 4 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 30.0 MAXIMUM COLLECTOR TO BASE VOLTAGE/STATIC/EMITTER OPEN AND 30.0 MAXIMUM COLLECTOR TO EMITTER VOLTAGE/STATIC/BASE OPEN AND 3.0 MAXIMUM EMITTER TO BASE VOLTAGE, DC
Related Searches:
SS340H
TRANSISTOR
NSN, MFG P/N
5961001402910
NSN
5961-00-140-2910
MFG
FREESCALE SEMICONDUCTOR INC.
Description
CURRENT RATING PER CHARACTERISTIC: 30.00 MILLIAMPERES MAXIMUM COLLECTOR CURRENT, DC
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: JUNCTION CONTACT
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.209 INCHES MINIMUM AND 0.230 INCHES MAXIMUM
OVERALL HEIGHT: 0.170 INCHES MINIMUM AND 0.210 INCHES MAXIMUM
OVERALL LENGTH: 0.170 INCHES MINIMUM AND 0.210 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 200.0 MILLIWATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: PNP
TERMINAL CIRCLE DIAMETER: 0.100 INCHES NOMINAL
TERMINAL LENGTH: 0.500 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 4 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 30.0 MAXIMUM COLLECTOR TO BASE VOLTAGE/STATIC/EMITTER OPEN AND 30.0 MAXIMUM COLLECTOR TO EMITTER VOLTAGE/STATIC/BASE OPEN AND 3.0 MAXIMUM EMITTER TO BASE VOLTAGE, DC
Related Searches:
8596279-001
TRANSISTOR
NSN, MFG P/N
5961001403144
NSN
5961-00-140-3144
MFG
DELCO ELECTRONICS CORP DELCO SYSTEMS OPNS
Description
CURRENT RATING PER CHARACTERISTIC: 0.50 AMPERES MAXIMUM COLLECTOR CURRENT, DC
DESIGN CONTROL REFERENCE: ST8596279-001
ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE: COLLECTOR
FEATURES PROVIDED: HERMETICALLY SEALED CASE
III PRECIOUS MATERIAL: GOLD
III PRECIOUS MATERIAL AND LOCATION: EXTERNAL SURFACES GOLD
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: JUNCTION CONTACT
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: TO-46
MANUFACTURERS CODE: 99974
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 200.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.195 INCHES MAXIMUM
OVERALL LENGTH: 0.150 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 0.4 WATTS MAXIMUM TOTAL DEVICE DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: NPN
TERMINAL CIRCLE DIAMETER: 0.100 INCHES NOMINAL
TERMINAL LENGTH: 0.500 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 3 UNINSULATED WIRE LEAD
TH
Related Searches:
A1980
TRANSISTOR
NSN, MFG P/N
5961001403144
NSN
5961-00-140-3144
MFG
TELCOM SEMICONDUCTOR INC
Description
CURRENT RATING PER CHARACTERISTIC: 0.50 AMPERES MAXIMUM COLLECTOR CURRENT, DC
DESIGN CONTROL REFERENCE: ST8596279-001
ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE: COLLECTOR
FEATURES PROVIDED: HERMETICALLY SEALED CASE
III PRECIOUS MATERIAL: GOLD
III PRECIOUS MATERIAL AND LOCATION: EXTERNAL SURFACES GOLD
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: JUNCTION CONTACT
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: TO-46
MANUFACTURERS CODE: 99974
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 200.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.195 INCHES MAXIMUM
OVERALL LENGTH: 0.150 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 0.4 WATTS MAXIMUM TOTAL DEVICE DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: NPN
TERMINAL CIRCLE DIAMETER: 0.100 INCHES NOMINAL
TERMINAL LENGTH: 0.500 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 3 UNINSULATED WIRE LEAD
TH
Related Searches:
SKB3340
TRANSISTOR
NSN, MFG P/N
5961001403144
NSN
5961-00-140-3144
MFG
TEXAS INSTRUMENTS INCORPORATED DBA TEXAS INSTRUMENTS DIV SEMICONDUCTOR GROUP
Description
CURRENT RATING PER CHARACTERISTIC: 0.50 AMPERES MAXIMUM COLLECTOR CURRENT, DC
DESIGN CONTROL REFERENCE: ST8596279-001
ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE: COLLECTOR
FEATURES PROVIDED: HERMETICALLY SEALED CASE
III PRECIOUS MATERIAL: GOLD
III PRECIOUS MATERIAL AND LOCATION: EXTERNAL SURFACES GOLD
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: JUNCTION CONTACT
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: TO-46
MANUFACTURERS CODE: 99974
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 200.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.195 INCHES MAXIMUM
OVERALL LENGTH: 0.150 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 0.4 WATTS MAXIMUM TOTAL DEVICE DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: NPN
TERMINAL CIRCLE DIAMETER: 0.100 INCHES NOMINAL
TERMINAL LENGTH: 0.500 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 3 UNINSULATED WIRE LEAD
TH
Related Searches:
AS821009
SEMICONDUCTOR DEVICE SET
NSN, MFG P/N
5961001405421
NSN
5961-00-140-5421
MFG
QUANTA SYSTEMS CORP DBA DATA-CONTROL SYSTEMS
Description
COMPONENT FUNCTION RELATIONSHIP: MATCHED
COMPONENT NAME AND QUANTITY: 2 TRANSISTOR
Related Searches:
AS821021
SEMICONDUCTOR DEVICE SET
NSN, MFG P/N
5961001405422
NSN
5961-00-140-5422
MFG
QUANTA SYSTEMS CORP DBA DATA-CONTROL SYSTEMS
Description
COMPONENT FUNCTION RELATIONSHIP: MATCHED
COMPONENT NAME AND QUANTITY: 2 TRANSISTOR
Related Searches:
2001079-001
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961001405432
NSN
5961-00-140-5432
2001079-001
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961001405432
NSN
5961-00-140-5432
MFG
HARRIS CORPORATION DBA GOVERNMENT COMMUNICATIONS SYSTEMS DIVISION DIV GOVERNMENT COMMUNICATION SYSTEMS DIVISION
Description
CURRENT RATING PER CHARACTERISTIC: 300.00 AMPERES MAXIMUM VOLTAGE REGULATOR DIODE CURRENT
INCLOSURE MATERIAL: PLASTIC
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 175.0 DEG CELSIUS JUNCTION
MOUNTING FACILITY QUANTITY: 1
MOUNTING METHOD: UNTHREADED HOLE
OVERALL DIAMETER: 0.780 INCHES MAXIMUM
OVERALL LENGTH: 1.730 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 10.0 WATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 28.0 MAXIMUM NOMINAL REGULATOR VOLTAGE
Related Searches:
26402-0012
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961001405432
NSN
5961-00-140-5432
26402-0012
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961001405432
NSN
5961-00-140-5432
MFG
BAE SYSTEMS INFORMATION AND ELECTRONIC SYSTEMS INTEGRATION I
Description
CURRENT RATING PER CHARACTERISTIC: 300.00 AMPERES MAXIMUM VOLTAGE REGULATOR DIODE CURRENT
INCLOSURE MATERIAL: PLASTIC
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 175.0 DEG CELSIUS JUNCTION
MOUNTING FACILITY QUANTITY: 1
MOUNTING METHOD: UNTHREADED HOLE
OVERALL DIAMETER: 0.780 INCHES MAXIMUM
OVERALL LENGTH: 1.730 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 10.0 WATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 28.0 MAXIMUM NOMINAL REGULATOR VOLTAGE
Related Searches:
351379300399
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961001405432
NSN
5961-00-140-5432
351379300399
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961001405432
NSN
5961-00-140-5432
MFG
THALES UK LIMITED, AEROSPACE DIVISION
Description
CURRENT RATING PER CHARACTERISTIC: 300.00 AMPERES MAXIMUM VOLTAGE REGULATOR DIODE CURRENT
INCLOSURE MATERIAL: PLASTIC
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 175.0 DEG CELSIUS JUNCTION
MOUNTING FACILITY QUANTITY: 1
MOUNTING METHOD: UNTHREADED HOLE
OVERALL DIAMETER: 0.780 INCHES MAXIMUM
OVERALL LENGTH: 1.730 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 10.0 WATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 28.0 MAXIMUM NOMINAL REGULATOR VOLTAGE
Related Searches:
352250029011
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961001405432
NSN
5961-00-140-5432
352250029011
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961001405432
NSN
5961-00-140-5432
MFG
THALES NEDERLAND
Description
CURRENT RATING PER CHARACTERISTIC: 300.00 AMPERES MAXIMUM VOLTAGE REGULATOR DIODE CURRENT
INCLOSURE MATERIAL: PLASTIC
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 175.0 DEG CELSIUS JUNCTION
MOUNTING FACILITY QUANTITY: 1
MOUNTING METHOD: UNTHREADED HOLE
OVERALL DIAMETER: 0.780 INCHES MAXIMUM
OVERALL LENGTH: 1.730 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 10.0 WATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 28.0 MAXIMUM NOMINAL REGULATOR VOLTAGE
Related Searches:
430408362860
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961001405432
NSN
5961-00-140-5432
430408362860
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961001405432
NSN
5961-00-140-5432
MFG
THALES COMMUNICATIONS BELGIUM SA
Description
CURRENT RATING PER CHARACTERISTIC: 300.00 AMPERES MAXIMUM VOLTAGE REGULATOR DIODE CURRENT
INCLOSURE MATERIAL: PLASTIC
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 175.0 DEG CELSIUS JUNCTION
MOUNTING FACILITY QUANTITY: 1
MOUNTING METHOD: UNTHREADED HOLE
OVERALL DIAMETER: 0.780 INCHES MAXIMUM
OVERALL LENGTH: 1.730 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 10.0 WATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 28.0 MAXIMUM NOMINAL REGULATOR VOLTAGE
