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5961-00-452-9556
20 Products
71-1031
RECTIFIER,SEMICONDUCTOR DEVICE
NSN, MFG P/N
5961004529556
NSN
5961-00-452-9556
71-1031
RECTIFIER,SEMICONDUCTOR DEVICE
NSN, MFG P/N
5961004529556
NSN
5961-00-452-9556
MFG
DARCHEM ENGINEERING LTD
Description
RECTIFIER,SEMICONDUCTOR DEVICE
Related Searches:
40-518-192-22
TRANSISTOR
NSN, MFG P/N
5961004529413
NSN
5961-00-452-9413
MFG
GE AVIATION BISHOPS CLEEVE CHELTENHAM
Description
SEMICONDUCTOR MATERIAL: SILICON
Related Searches:
47-654-113-20
TRANSISTOR
NSN, MFG P/N
5961004529413
NSN
5961-00-452-9413
MFG
MEGGITT UK LTD T/A VIBRO-METER UK
Description
SEMICONDUCTOR MATERIAL: SILICON
Related Searches:
99-013-6003
TRANSISTOR
NSN, MFG P/N
5961004529413
NSN
5961-00-452-9413
MFG
NATO STOCK NUMBER ASSIGNED BY ANOTHER NATION
Description
SEMICONDUCTOR MATERIAL: SILICON
Related Searches:
40-666-6001
TRANSISTOR
NSN, MFG P/N
5961004529414
NSN
5961-00-452-9414
MFG
MEGGITT UK LTD T/A VIBRO-METER UK
Description
CURRENT RATING PER CHARACTERISTIC: 1.00 AMPERES MAXIMUM COLLECTOR CURRENT, DC
DESIGN CONTROL REFERENCE: BFY50
ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE: COLLECTOR
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: JUNCTION CONTACT
MANUFACTURERS CODE: K0004
MOUNTING METHOD: TERMINAL
OVERALL HEIGHT: 0.260 INCHES MAXIMUM
OVERALL LENGTH: 0.260 INCHES MAXIMUM
OVERALL WIDTH: 0.370 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 800.1 MILLIWATTS MAXIMUM COLLECTOR POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: NPN
TERMINAL CIRCLE DIAMETER: 0.200 INCHES NOMINAL
TERMINAL LENGTH: 1.500 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 3 UNINSULATED WIRE LEAD
THE MANUFACTURERS DATA:
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 80.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-EMITTER, BASE OPEN
Related Searches:
9330-116-00112
TRANSISTOR
NSN, MFG P/N
5961004529414
NSN
5961-00-452-9414
MFG
ALCATEL-LUCENT NETWORK SYSTEMS
Description
CURRENT RATING PER CHARACTERISTIC: 1.00 AMPERES MAXIMUM COLLECTOR CURRENT, DC
DESIGN CONTROL REFERENCE: BFY50
ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE: COLLECTOR
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: JUNCTION CONTACT
MANUFACTURERS CODE: K0004
MOUNTING METHOD: TERMINAL
OVERALL HEIGHT: 0.260 INCHES MAXIMUM
OVERALL LENGTH: 0.260 INCHES MAXIMUM
OVERALL WIDTH: 0.370 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 800.1 MILLIWATTS MAXIMUM COLLECTOR POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: NPN
TERMINAL CIRCLE DIAMETER: 0.200 INCHES NOMINAL
TERMINAL LENGTH: 1.500 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 3 UNINSULATED WIRE LEAD
THE MANUFACTURERS DATA:
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 80.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-EMITTER, BASE OPEN
Related Searches:
BFY50
TRANSISTOR
NSN, MFG P/N
5961004529414
NSN
5961-00-452-9414
MFG
VISHAY
Description
CURRENT RATING PER CHARACTERISTIC: 1.00 AMPERES MAXIMUM COLLECTOR CURRENT, DC
DESIGN CONTROL REFERENCE: BFY50
ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE: COLLECTOR
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: JUNCTION CONTACT
MANUFACTURERS CODE: K0004
MOUNTING METHOD: TERMINAL
OVERALL HEIGHT: 0.260 INCHES MAXIMUM
OVERALL LENGTH: 0.260 INCHES MAXIMUM
OVERALL WIDTH: 0.370 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 800.1 MILLIWATTS MAXIMUM COLLECTOR POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: NPN
TERMINAL CIRCLE DIAMETER: 0.200 INCHES NOMINAL
TERMINAL LENGTH: 1.500 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 3 UNINSULATED WIRE LEAD
THE MANUFACTURERS DATA:
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 80.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-EMITTER, BASE OPEN
Related Searches:
1S922
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961004529422
NSN
5961-00-452-9422
MFG
RAYTHEON SYSTEMS LTD WEAPONS SUPPORT GROUP
Description
SEMICONDUCTOR DEVICE,DIODE
Related Searches:
40-666-2140
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961004529422
NSN
5961-00-452-9422
40-666-2140
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961004529422
NSN
5961-00-452-9422
MFG
MEGGITT UK LTD T/A VIBRO-METER UK
Description
SEMICONDUCTOR DEVICE,DIODE
Related Searches:
70-1006
TRANSISTOR
NSN, MFG P/N
5961004529525
NSN
5961-00-452-9525
MFG
DARCHEM ENGINEERING LTD
Description
SEMICONDUCTOR MATERIAL: SILICON
Related Searches:
68-1053
OVEN SELF REGULAT
NSN, MFG P/N
5961004529532
NSN
5961-00-452-9532
MFG
DARCHEM ENGINEERING LTD
Description
OVEN SELF REGULAT
Related Searches:
71-1010
SEMICONDUCTOR DEV
NSN, MFG P/N
5961004529545
NSN
5961-00-452-9545
MFG
MEGGITT UK LTD T/A MEGGITT AVIONICS
Description
SEMICONDUCTOR DEV
Related Searches:
70-1004
TRANSISTOR
NSN, MFG P/N
5961004529555
NSN
5961-00-452-9555
MFG
MEGGITT UK LTD T/A MEGGITT AVIONICS
Description
SEMICONDUCTOR MATERIAL: SILICON
Related Searches:
70-1005
TRANSISTOR
NSN, MFG P/N
5961004529601
NSN
5961-00-452-9601
MFG
DARCHEM ENGINEERING LTD
Description
SEMICONDUCTOR MATERIAL: SILICON
Related Searches:
70-1032
TRANSISTOR
NSN, MFG P/N
5961004529646
NSN
5961-00-452-9646
MFG
DARCHEM ENGINEERING LTD
Description
SEMICONDUCTOR MATERIAL: SILICON
Related Searches:
70-1038
TRANSISTOR
NSN, MFG P/N
5961004529718
NSN
5961-00-452-9718
MFG
DARCHEM ENGINEERING LTD
Description
SEMICONDUCTOR MATERIAL: SILICON
Related Searches:
CV9055
TRANSISTOR
NSN, MFG P/N
5961004529718
NSN
5961-00-452-9718
MFG
MINISTRY OF DEFENCE PROCUREMENT EXEC UTIVE
Description
SEMICONDUCTOR MATERIAL: SILICON
Related Searches:
DSR3654-2
TRANSISTOR
NSN, MFG P/N
5961004529765
NSN
5961-00-452-9765
MFG
MEGGITT AIRCRAFT BRAKING SYSTEMS
Description
SEMICONDUCTOR MATERIAL: SILICON
Related Searches:
DSR20254-100
TRANSISTOR
NSN, MFG P/N
5961004529766
NSN
5961-00-452-9766
MFG
MEGGITT AIRCRAFT BRAKING SYSTEMS
Description
TRANSISTOR
Related Searches:
DSR3654-3
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961004529767
NSN
5961-00-452-9767
MFG
MEGGITT AIRCRAFT BRAKING SYSTEMS
Description
SEMICONDUCTOR DEVICE,DIODE
